EN71GL128B0 Purpose Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the same as that of Eon delivered before. Please be advised with the change and appreciate your kindly cooperation and fully support Eon’s product family. Eon products’ New Top Marking cFeon Top Marking Example: cFeon Part Number: XXXX-XXX Lot Number: XXXXX Date Code: XXXXX Continuity of Specifications There is no change to this data sheet as a result of offering the device as an Eon product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers Eon continues to support existing part numbers beginning with “Eon” and “cFeon” top marking. To order these products, during the transition please specify “Eon top marking” or “cFeon top marking” on your purchasing orders. For More Information Please contact your local sales office for additional information about Eon memory solutions. This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2009/11/23 www.eonssi.com EN71GL128B0 EN71GL128 Base MCP Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features ■ Power supply voltage of 2.7 V to 3.3V ■ High performance - 70 ns ■ Package - 7 x 9 x 1.2mm 56 ball FBGA ■ Operating Temperature - 25°C to +85°C General Description The EN71GL series is a product line of stacked Multi-Chip Product (MCP) packages and consists of: ■ ■ EN29GL128 (Page mode) Flash memory with lowest address sector protected. Pseudo SRAM. For detailed specifications, please refer to the individual datasheets listed in the following table. Device Document NOR Flash EN29GL128 Pseudo SRAM ENPSL32 Product Selector Guide 128Mb Flash Memory Device-Model# EN71GL128B0 pSRAM density 32M pSRAM Flash Access time 70ns pSRAM Access time 70ns pSRAM Page read Access time 25ns Page read Access time 25ns Package 56 FBGA This Data Sheet may be revised by subsequent versions 2 or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2009/11/23 www.eonssi.com EN71GL128B0 MCP Block Diagram This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2009/11/23 www.eonssi.com EN71GL128B0 Connection Diagram MCP Flash-only Addresses Shared Addresses EN71GL128B0 A22, A21 A20 – A0 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2009/11/23 www.eonssi.com EN71GL128B0 Pin Description Signal Description A22–A0 23 Address Inputs (Common) DQ15–DQ0 16 Data Inputs/Outputs (Common) CE1#f Chip Enable 1 (Flash) CE1#ps Chip Enable 1 (pSRAM) CE2ps Chip Enable 2 (pSRAM) OE# Output Enable (Common) WE# Write Enable (Common) RY/BY# Ready/Busy Output (Flash) UB# Upper Byte Control (pSRAM) LB# Lower Byte Control (pSRAM) RESET# Hardware Reset Pin, Active Low (Flash) WP#/ACC Hardware Write Protect/Acceleration Pin (Flash) VCCf Flash 3.0 volt-only single power supply VCCps pSRAM Power Supply VSS Device Ground (Common) NC Pin Not Connected Internally Logic Symbol This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2009/11/23 www.eonssi.com EN71GL128B0 ORDERING INFORMATION EN71GL128 B0 ― 70 C W P PACKAGING CONTENT (Blank) = Conventional P = Pb Free TEMPERATURE RANGE W = Wireless (-25°C to +85°C) PACKAGE C =56-Ball Fine Pitch Ball Grid Array (FBGA) 0.80mm pitch, 7mm x 9mm package SPEED 70 = 70ns pSRAM density B0 = 32M pSRAM BASE PART NUMBER EN = Eon Silicon Solution Inc. 71GL = Multi-chip Product (MCP) 3.0V Page Mode Flash Memory and RAM 128 = 128 Megabit (8M x 16) This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2009/11/23 www.eonssi.com EN71GL128B0 PACKAGE MECHANICAL 56-ball Fine-Pitch Ball Grid Array (FBGA) 7 x 9 mm Package, pitch: 0.8mm, ball: 0.4mm SYMBOL DIMENSION IN MM MIN. NOR MAX A --- - -- 1.20 A1 0.25 0.30 0.35 A2 0.80 - -- 0.95 D E 8.95 6.95 9.00 7.00 9.05 7.05 D1 --- 5.60 - -- E1 --- 5.60 - -- e --- 0.80 - -- b 0.35 0.40 0.45 Note : Controlling dimensions are in millimeters (mm). This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2009/11/23 www.eonssi.com EN71GL128B0 Revisions List Revision No Description A B Date Initial Release 2009/05/27 Update EN29GL128 (Page mode) Flash memory with lowest address sector 2009/11/23 protected on page 2. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2009/11/23 www.eonssi.com