Eon Silicon Solution Inc. Page 1/7 Specification Comparison Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory 16 Megabit (1M x 16-bit) Pseudo Static RAM EN71PL032A0 VS S71GL032N40 Part No. : EN71PL032A0 Issued date : 2009/2/19 Prepared by : FAE Engineer：Sunny Tai Approval by : FAE Manager：Jason Tseng This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 02/ 19 Eon Silicon Solution Inc. Page 2/7 1. Part No. Eon : Spansion : EN71PL032A0 S71GL032N40 2. Package Dimension EN71PL032A0 : 7 x 9 x 1.2mm 56 ball FBGA S71GL032N40 : 7 x 9 x 1.2mm 56 ball FBGA This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 02/ 19 Eon Silicon Solution Inc. Page 3/7 3. Pin Configuration and Description The Pin Configuration and Description of EN71PL032A0 are the same as S71GL032N40 56-ball FBGA Top View, Balls Facing Down B1 A3 A2 A3 A4 A5 A6 A7 A7 LB# WP#/ACC WE# A8 A11 B2 B3 B4 B5 B6 B7 B8 A19 A12 A15 A6 UB# RESET# CE2ps Flash only C1 C2 A2 A5 C3 C4 C5 C6 C7 C8 A18 RY/BY# A20 A9 A13 A21 D1 D2 D3 D6 D7 D8 A1 A4 A17 A10 A14 RFU E1 E2 E3 E6 E7 E8 A0 VSS DQ6 RFU F1 F2 F6 F7 CE1# f OE# G1 G2 CE1# ps DQ0 H2 DQ8 DQ1 F3 DQ9 G3 DQ10 H3 DQ2 F4 DQ3 G4 VCCf H4 DQ11 F5 DQ4 G5 DQ13 DQ15 G6 G7 DQ12 DQ7 H5 H6 H7 RF U DQ5 VCCps RAM only Reserved for Future Use A16 F8 RFU G8 VSS DQ14 Note: MCP Flash-only Addresses Shared Addresses S71GL032N40 A20-A18 A17 – A0 EN71PL032A0 A20 A19 – A0 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 02/ 19 Eon Silicon Solution Inc. Page 4/7 S71GL032N40 EN71PL032A0 Address Inputs (Common) A0-A21 A0-A21 Data Inputs/Outputs (Common) Chip Enable 1 (Flash) DQ15-DQ0 CE1#f DQ15-DQ0 CE1#f Chip Enable 1 (pSRAM) CE1#s CE1#ps Chip Enable 2 (pSRAM) CE2s CE2#ps Output Enable (Common) OE# OE# Write Enable (Common) WE# WE# Ready/Busy Output (Flash) RY/BY# RY/BY# Upper Byte Control (pSRAM) UB# UB# Lower Byte Control (pSRAM) LB# LB# Hardware Reset Pin, Active Low (Flash) RESET# RESET# Hardware Write Protect / Acceleration Pin (Flash) WP#/ACC WP#/ACC Flash 3.0 volt-only single power supply VCCf pSRAM Power Supply VCCf VCCs VCCps Device Ground (Common) VSS Vss Pin Not Connected Internally NC NC This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 02/ 19 Eon Silicon Solution Inc. Page 5/7 4. 32 Megabit 3.0 Volt Simultaneous Operation Page read Comparison table: S71GL032N40 EN71PL032A0 32 Megabit (2 M x 16-Bit), 3 Volt Simultaneous Read/Write Vcc VID VHH SO Page read Secure Si Boot Sectors FlexBank Architecture Data retention Cycling Endurnce VIO Page access time Random access time CFI Erase/Program Suspend/Resume Unlock Bypass Program Multi sector erase WP#/ACC ACCelerated Sector Erase Write Buffer Programming Word Pgm time Total Write Buffer Program Time Acc. Word Pgm time Total Acc. Effective Write Buffer Program Time Sector Erase time Chip Erase time 2.7V to 3.6V 11.5 to 12.5 11.5 to 12.5 No support 8-word 128 words 8.5 - 9.5 8.5 - 9.5 Read while Write 4-word 64 words SA0~SA62 : 64KB SA63~SA70 : 8KB SA0~SA7 : 4KB SA8~SA69 : 32KB SA70~SA77 : 4KB Single Bank 4 Banks: 8M, 24M, 24M, 8M 20 yrs typical 100,000 Yes, VIO = Vcc 100,000 No 25ns 90ns Yes. Spansion's CFI table 70ns Yes. EON's CFI table Yes Yes No Yes No @ VIL: WP# protect four outermost sectors @ VIH: Normal operation @ VHH: accelerated programming No Yes, about 40mS faster per sector 16-word Write Buffer 32-word Write Buffer 6us (typ.) 240us 4us (typ.) 200us 0.5s (typ.) 64s (typ.) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 0.5s (typ.) 39s (typ.) ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 02/ 19 Eon Silicon Solution Inc. S71GL032N40 Autoselect 6/7 EN71PL032A0 Persistent Protection Bit (PPB) Yes. 1 per sector for sector 0 to 10 and 131 to 141, 1 per 4 sectors for the rest PPB Lock Bit Yes Dynamic Protctn Bit (DYB) Password Sector Protection High Voltage Sector Protection Temporary Sector Unprotect Page Yes (1 per sectors) No user-defined 64-bit password No Yes Yes A9 HV Autoselect Yes Yes MID (addr 000h) MID (addr 100h) DID (addr x01h) DID (addr x0Eh) DID (addr x0Fh) 0001 007F 001C 227E 220A 2201 227E 221A 2201 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 02/ 19 Eon Silicon Solution Inc. Page 7/7 5. Conclusion The package of S71GL032N40 and EN71PL032A0 is compatible. There is the list that software should be modified to cover the difference. (1). The Manufacture ID EN71PL064A0: 007F ( A8 = L ) or 001CH (A8 = H ) S71GL032N40: 0001H (2). The Device ID: Device ID (3). S71GL032N40 EN71PL032A0 DID (addr x01h) 227E 227E DID (addr x0Eh) 221A 220A DID (addr x0Fh) 2201 2201 Sector Structure EN71PL032A0 supports eight 4KB sector in both of top and bottom side. S71GL032N40 supports eight 8KB sector in top side (4). Multi sector Erase EN71PL032A0: No S71GL032N40: Yes This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 02/ 19