EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features ■ Power supply voltage of 1.7V to 1.95V ■ High performance - 70 ns @ random access - 7 ns @ burst access (108MHz) ■ Operating Temperature - 25°C to +85°C ■ Package - 6.2 x 7.7 x 1.0mm 56 ball BGA General Description The EN71NS series is a product line of stacked Multi-Chip Product (MCP) packages and consists of: ■ ■ E29NS128 (Burst mode) Flash memory die. Pseudo SRAM. For detailed specifications, Please refer to the individual datasheets listed in the following table. Device Document NOR Flash EN29NS128 Pseudo SRAM ENPSMC5 Product Selector Guide 128 Mb Flash Memories Device-Model# EN71NS128C0 pSRAM density 64M pSRAM Flash Access time 70ns at Async. Mode 7ns at Burst Read pSRAM Access time 70ns at Async. Mode 7ns at Burst Read pSRAM Burst mode max frequency 108MHz pSRAM Burst mode 108MHz max frequency Package 56-ball BGA This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2011/06/16 www.eonssi.com EN71NS128C0 MCP Block Diagram NOR FLASH + PSRAM DIAGRAM Note: Amax = A22 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2011/06/16 www.eonssi.com EN71NS128C0 Connection Diagram MCP Flash-only Addresses Shared Addresses Shared ADQ Pins EN71NS128C0 A22 A21 – A16 ADQ15 – ADQ0 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2011/06/16 www.eonssi.com EN71NS128C0 Pin Description Symbol A22–A16 ADQ15–ADQ0 OE# WE# VSSQ/VSS VCCQ/VCC NC Description Flash pSRAM Address Inputs Multiplexed Address/Data Output Enable input. Asynchronous relative to CLK for the Burst mode. Write Enable input. Ground Device Power Supply (1.7 V–1.95 V). Not Contact; pin not connected internally Ready output; indicates the status of the Burst read. Flash Memory RDY (using default “Active HIGH” configuration) VOL = data invalid, VOH = data valid. Note: The default polarity for the pSRAM WAIT signal is opposite the default polarity of the Flash RDY signal. ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● RDYf/WAITp CLK AVD# RESET# f WP#f ACCf CE# p CE# f CREp LB#p UB#p RFU pSRAM WAIT (using default “Active HIGH” configuration) VOL = data valid, VOH = data invalid. To match polarities, change bit 10 of the pSRAM Bus Configruation Register to 0 (Active LOW WAIT). Alternately, change bit 10 of the Flash Configuration Register to 0 (Active LOW RDY) Clock input. In burst mode, after the initial word is output, subsequent active edges of CLK increment the internal address counter. Should be at VOL or VIH while in asynchronous mode. Address Valid input. Indicates to device that the valid address is present on the address inputs. VIL = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched on rising edge of CLK. VIH = device ignores address inputs Hardware reset input. VIL = device resets and returns to reading array data Hardware write protect input. VIL = disables program and erase functions in the four outermost sectors. Should be at VIH for all other conditions. Accelerated input. At VHH, accelerates programming; automatically places device in Accelerated Program mode. At VIL, disables all program and erase functions. Should be at VIH for all other conditions. (Applying high voltage on MCP package is prohibited; otherwise, internal RAM may be damaged easily!) Chip Enable Input for pSRAM. Chip Enable Input for Flash. Asynchronous relative to CLK for the Burst mode. Control register enable (pSRAM). Lower byte enable. DQ7~DQ0 (pSRAM) Upper byte enable. DQ15~DQ8 (pSRAM) Reserved for Future Use This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2011/06/16 ● ● ● ● ● ● ● ● www.eonssi.com EN71NS128C0 Operating Mode (For Asynchronous mode) Asynchronous Mode BCR[15]=1 Power Read Active X L L H L L Low-z Data out Write Active X L X L L L High-z Data in Standby Standby H or L X H X X L X High-z High-z No operation Idle X X L X X L X Low-z X Configuration register write Active X L H L H X Low-z High-z Configuration register read Active X L L H H L Low-z Config. Reg.out CLK ADV# CE# OE# WE# CRE UB#/ WAIT2 A/DQ[15:0] LB# Operating Mode (For Synchronous Burst mode) Burst Mode BCR[15]=0 Power Async read Active H or L L L H L L Low-z Data out Async write Active H or L L X L L L High-z Data in Standby Standby H or L X H X X L X High-z High-z No operation Idle H or L X L X X L X Low-z X Initial burst read Active L L X H L L Low-z Address Initial burst write Active L L H L L X Low-z Address Burst continue Active H L X X X L Low-z Data out or Data in Configuration register write Active L L H L H X Low High-z Configuration register read Active L L L H H L Low Config. Reg.out CLK ADV# CE# OE# WE# CRE UB#/ WAIT LB# A/DQ[15:0] Note: X=don’t care. H=logic high. L=logic low. V= Valid data This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2011/06/16 www.eonssi.com EN71NS128C0 ORDERING INFORMATION EN71NS 128 C0 - 7 DC W P PACKAGING CONTENT P = RoHS compliant TEMPERATURE RANGE W = Wireless (-25°C to +85°C) PACKAGE DC = 56-Ball BGA 0.50mm pitch, 6.2mm x 7.7mm package BURST READ ACCESS TIME 7 = 108 MHz Pseudo SRAM density C0 = 64Mb DENSITY 128 = 128Megabit (8M x 16 Bit) BASE PART NUMBER EN = Eon Silicon Solution Inc. 71NS = Multi-chip Product (MCP) 1.8V Simultaneous Read/Write, Burst-mode Multiplexed Flash and RAM This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2011/06/16 www.eonssi.com EN71NS128C0 PACKAGE MECHANICAL 56-ball Ball Grid Array (BGA) 6.2 x 7.7 x 1.0mm Package, pitch: 0.5mm, ball: 0.3mm SYMBOL DIMENSION IN MM MIN. NOR MAX A --- --- 1.00 A1 0.16 --- 0.26 0.676 A2 D 6.10 6.20 6.30 E 7.60 7.70 7.80 D1 4.5 BSC E1 6.5 BSC e 0.5 BSC b 0.27 --Note : 1. Coplanarity: 0.1 mm 0.37 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2011/06/16 www.eonssi.com EN71NS128C0 Revisions List Revision No Description Date A Initial Release 2010/11/23 B Change Pseudo SRAM from ENPSS64 to ENPSMC5. 2011/06/16 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2004 Eon Silicon Solution, Inc., Rev. B, Issue Date: 2011/06/16 www.eonssi.com