BCV47 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON NPN DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 is a silicon NPN Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: FG SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current SYMBOL VCBO VCEO VEBO IC ICM IB Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 80 UNITS V 60 V 10 V 500 mA 800 mA 100 mA 350 mW PD TJ, Tstg -65 to +150 °C ΘJA 357 °C/W ELECTRICAL SYMBOL ICBO IEBO CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VCB=30V VBE=10V BVCEO IC=10mA 60 BVCBO IC=10μA IE=100nA 80 V BVEBO 10 V VCE(SAT) VBE(SAT) IC=100mA, IB=0.1mA IC=100mA, IB=0.1mA hFE VCE=5.0V, IC=1.0mA 2,000 hFE IC=10mA 4,000 hFE VCE=5.0V, VCE=5.0V, IC=100mA 10,000 fT VCE=5.0V, IC=30mA, f=100MHz MAX 100 UNITS nA 100 nA V 220 1.0 V 1.5 V MHz R3 (23-April 2015) BCV47 SURFACE MOUNT SILICON NPN DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE 2 1 3 LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: FG R3 (23-April 2015) w w w. c e n t r a l s e m i . c o m BCV47 SURFACE MOUNT SILICON NPN DARLINGTON TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R3 (23-April 2015) w w w. c e n t r a l s e m i . c o m