CMPT7410 SURFACE MOUNT LOW VCE(SAT) PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT7410 type is a PNP Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is designed for battery driven, handheld devices requiring high current and Low VCE(SAT). MARKING CODE: C741 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100μA BVCEO IC=10mA BVEBO IE=100μA VCE(SAT) IC=50mA, IB=5.0mA VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=200mA, IB=20mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=800mA, IB=80mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=100mA hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=1.0A fT VCE=10V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz UNITS V V V A A mW °C °C/W 40 25 6.0 1.0 1.5 350 -65 to +150 357 otherwise noted) MIN TYP MAX 100 100 40 25 6.0 30 50 95 205 320 400 100 100 100 50 100 50 75 150 250 400 450 1.1 0.9 UNITS nA nA V V V mV mV mV mV mV mV V V 300 10 15 MHz pF R2 (1-August 2011) CMPT7410 SURFACE MOUNT LOW VCE(SAT) PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C741 R2 (1-August 2011) w w w. c e n t r a l s e m i . c o m