Y RCMPD7005 A IN IM EL Central CMPD7005A CMPD7005C CMPD7005S PR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD7005, CMPD7005A, CMPD7005C and CMPD7005S are silicon switching diodes with various diode configurations, manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-23 surface mount case. These devices are designed for applications requiring high voltage switching diodes. SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE SOT-23 CASE The following configurations are available: CMPD7005 CMPD7005A CMPD7005C CMPD7005S SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MARKING MARKING MARKING MARKING MAXIMUM RATINGS PER DIODE: (TA=25°C) Peak Repetitive Reverse Voltage LI Peak Repetitive Forward Current E R Forward Surge Current, tp=1.0 µs Forward Surge Current, tp=1.0 s P Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR C7005 C705A C705C C705S Y R A 500 UNITS V 500 V 100 mA 300 mA IFSM 4.0 A IFSM 1.0 A PD 350 mW TJ, Tstg -65 to +150 °C ΘJA 357 °C/W N I M Continuous Reverse Voltage Continous Forward Current CODE: CODE: CODE: CODE: VRRM IF IFRM ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR VR=400V IR VR=400V, TA=150°C BVR IR=1.0µA 500 VF IF=10mA VF IF=50mA VF IF=100mA CT VR=0V, f=1.0 MHz trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA MAX 100 100 1.0 1.2 1.4 5.0 500 UNITS nA µA V V V V pF ns R1 (8-February 2005) Central TM IM RY A INCMPD7005 L RE P Semiconductor Corp. CMPD7005A CMPD7005C CMPD7005S SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE MARKING CODE: SEE PREVIOUS PAGE 2 1 2 1 D1 3 D2 3 2 1 D1 D2 3 2 1 D1 D2 3 LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: CMPD7005 1) Anode 2) No Connection 3) Cathode CMPD7005A 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 CMPD7005C 1) Anode D2 2) Anode D1 3) Cathode D1, Cathode D2 CMPD7005S 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 R1 (8-February 2005)