CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring a extremely low leakage diode. The following configurations are available: SOT-23 CASE CMPD6001 CMPD6001A CMPD6001C CMPD6001S SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING MARKING MARKING MARKING SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg ΘJA CODE: CODE: CODE: CODE: ULO ULA ULC ULS 75 100 250 250 4000 1000 350 UNITS V V mA mA mA mA mW -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR VBR VF VF VF CT trr TEST CONDITIONS VR=75V IR=100µA IF=1.0mA IF=10mA IF=100mA VR=0, f =1.0 MHz IR=IF=10mA, RL=100Ω, Rec. to 1.0mA MIN MAX 500 100 0.85 0.95 1.1 2.0 3.0 UNITS pA V V V V pF µs R1 ( 01-Mar 2001) Central TM CMPD6001 CMPD6001A CMPD6001C CMPD6001S Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE Pin Configuration N.C. A C CMPD6001 C1 C2 A1, A2 CMPD6001A A1 A2 C1, C2 CMPD6001C C1 A2 A1, C2 CMPD6001S R1 ( 01-Mar 2001)