CENTRAL CMPD6001

CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD6001
series types are silicon switching diodes manufactured by the epitaxial planar process,
designed for switching applications requiring a
extremely low leakage diode.
The following configurations are available:
SOT-23 CASE
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
MARKING
MARKING
MARKING
MARKING
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
ΘJA
CODE:
CODE:
CODE:
CODE:
ULO
ULA
ULC
ULS
75
100
250
250
4000
1000
350
UNITS
V
V
mA
mA
mA
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
IR
VBR
VF
VF
VF
CT
trr
TEST CONDITIONS
VR=75V
IR=100µA
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f =1.0 MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
MIN
MAX
500
100
0.85
0.95
1.1
2.0
3.0
UNITS
pA
V
V
V
V
pF
µs
R1 ( 01-Mar 2001)
Central
TM
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
Semiconductor Corp.
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
SOT-23 CASE - MECHANICAL OUTLINE
Pin Configuration
N.C.
A
C
CMPD6001
C1
C2
A1, A2
CMPD6001A
A1
A2
C1, C2
CMPD6001C
C1
A2
A1, C2
CMPD6001S
R1 ( 01-Mar 2001)