cmldm3737 - Central Semiconductor Corp.

CMLDM3737
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFET
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM3737
consists of dual silicon N-Channel enhancement-mode
MOSFETs designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer very low
rDS(ON) and low threshold voltage.
MARKING CODE: 7C3
SOT-563 CASE
APPLICATIONS:
• Load Switch / Level Shifting
• Battery Charging
• Boost Switch
• Electro-luminescent Backlighting
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current (tp=10μs)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
FEATURES:
• ESD Protection up to 2kV
• 350mW Power Dissipation
• Very Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-563 Surface Mount Package
• Complementary Dual P-Channel Device: CMLDM5757
SYMBOL
VDS
VGS
20
UNITS
V
8.0
V
ID
IDM
PD
540
mA
1.5
A
350
mW
PD
PD
300
mW
150
mW
TJ, Tstg
ΘJA
-65 to +150
°C
357
°C/W
MAX
5.0
UNITS
μA
1.0
μA
1.0
V
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR VGS=4.5V, VDS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VDS=VGS, ID=250μA
VGS=0, IS=350mA
VSD
rDS(ON)
rDS(ON)
rDS(ON)
Crss
20
0.45
VGS=4.5V, ID=540mA
VGS=2.5V, ID=500mA
VGS=1.8V, ID=350mA
V
1.2
V
0.55
Ω
0.7
Ω
0.9
Ω
20
pF
Ciss
VDS=16V, VGS=0, f=1.0MHz
VDS=16V, VGS=0, f=1.0MHz
150
pF
Coss
VDS=16V, VGS=0, f=1.0MHz
25
pF
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R3 (8-June 2015)
CMLDM3737
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
ton
toff
CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
TEST CONDITIONS
TYP
VDS=10V, VGS=4.5V, ID=500mA
1.58
VDS=10V, VGS=4.5V, ID=500mA
0.17
VDS=10V, VGS=4.5V, ID=500mA
0.24
VDD=10V, VGS=4.5V,
VDD=10V, VGS=4.5V,
ID=540mA, RG=10Ω
ID=540mA, RG=10Ω
UNITS
nC
nC
10
nC
ns
25
ns
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Drain Q2
4) Source Q2
5) Gate Q2
6) Drain Q1
MARKING CODE: 7C3
R3 (8-June 2015)
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