CENTRAL CMLDM7585

CMLDM7585
SURFACE MOUNT SILICON
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7585
consists of complementary N-Channel and P-Channel
enhancement-mode silicon MOSFETs designed for
high speed pulsed amplifier and driver applications.
These MOSFETs offer very low rDS(ON) and low
threshold voltage.
MARKING CODE: 87C
SOT-563 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable devices
FEATURES:
• ESD protection up to 1800V (Human Body Model)
• 350mW power pissipation
• Very low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small, SOT-563 surface mount package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
SYMBOL N-CH (Q1)
VDS
20
Gate-Source Voltage
VGS
ID
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current (tp=10μs)
IDM
PD
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=4.5V, VDS=0
IDSS
BVDSS
VGS(th)
VDS=16V, VGS=0
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VSD
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
8.0
V
mA
1.0
350
TJ, Tstg
ΘJA
Thermal Resistance (Note 1)
N-CH (Q1)
MIN TYP MAX
1.0
UNITS
V
650
1.3
PD
PD
Power Dissipation (Note 3)
P-CH (Q2)
A
mW
300
mW
150
mW
-65 to +150
°C
357
°C/W
P-CH (Q2)
MIN TYP MAX
10
UNITS
μA
-
-
100
-
-
100
20
-
-
20
-
-
V
0.5
-
1.1
0.5
-
1.0
V
VGS=0, IS=200mA
VGS=0, IS=250mA
VGS=4.5V, ID=600mA
-
-
1.1
-
-
-
V
-
-
-
-
-
1.1
V
-
-
-
Ω
VGS=4.5V, ID=350mA
VGS=2.5V, ID=500mA
VGS=2.5V, ID=300mA
-
-
-
-
Ω
-
-
-
-
0.37
0.5
Ω
VGS=1.8V, ID=350mA
VGS=1.8V, ID=150mA
-
-
0.7
-
-
-
Ω
-
-
-
-
-
0.8
Ω
-
0.14 0.23
-
-
0.2 0.275
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
-
0.25 0.36
nA
Ω
R4 (5-June 2013)
CMLDM7585
SURFACE MOUNT SILICON
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
SYMBOL
TEST CONDITIONS
gFS
VDS=10V, ID=400mA
gFS
VDS=10V, ID=200mA
Crss
Ciss
Coss
Qg(tot)
Qg(tot)
Qgs
Qgs
Qgd
Qgd
ton
toff
N-CH (Q1)
MIN
TYP
1.0
-
P-CH (Q2)
MIN
TYP
-
-
0.2
UNITS
S
-
S
VDS=16V, VGS=0, f=1.0MHz
VDS=16V, VGS=0, f=1.0MHz
-
18
-
25
pF
-
100
-
100
pF
VDS=16V, VGS=0, f=1.0MHz
VDS=10V, VGS=4.5V, ID=500mA
-
16
-
21
pF
-
1.58
-
-
nC
VDS=10V, VGS=4.5V,
VDS=10V, VGS=4.5V,
VDS=10V, VGS=4.5V,
ID=200mA
-
-
-
1.2
nC
ID=500mA
-
0.17
-
-
nC
ID=200mA
-
-
-
0.24
nC
-
0.24
-
-
nC
VDS=10V, VGS=4.5V, ID=500mA
VDS=10V, VGS=4.5V, ID=200mA
VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω
VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω
-
-
-
0.36
nC
-
10
-
38
ns
-
25
-
48
ns
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Drain Q2
4) Source Q2
5) Gate Q2
6) Drain Q1
MARKING CODE: 87C
R4 (5-June 2013)
w w w. c e n t r a l s e m i . c o m
CMLDM7585
SURFACE MOUNT SILICON
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
N-CHANNEL TYPICAL ELECTRICAL CHARACTERISTICS
R4 (5-June 2013)
w w w. c e n t r a l s e m i . c o m
CMLDM7585
SURFACE MOUNT SILICON
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
P-CHANNEL TYPICAL ELECTRICAL CHARACTERISTICS
R4 (5-June 2013)
w w w. c e n t r a l s e m i . c o m