CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE FEATURES • ESD protected up to 2kV MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E utilizes the USA pinout configuration, while the CMLDM7003JE utilizes the Japanese pinout configuration. These special Dual Transistor devices offer low drain-source on state resistance (rDS(ON)) and ESD protection up to 2kV. MARKING CODES: CMLDM7003E: C73 CMLDM7003JE: C7J SYMBOL VDS VDG VGS ID IDM PD PD PD TJ, Tstg ΘJA UNITS V V V mA A mW mW mW °C °C/W 50 50 12 280 1.5 350 300 150 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX VGS=5.0V 50 ♦ IGSSF, IGSSR VGS=10V 0.5 ♦ IGSSF, IGSSR VGS=12V 1.0 ♦ IGSSF, IGSSR IDSS VDS=50V, VGS=0 50 BVDSS VGS=0, ID=10μA 50 VGS(th) VDS=VGS, ID=250μA 0.49 1.2 VSD VGS=0, IS=115mA 1.4 VGS=1.8V, ID=50mA 1.6 2.3 ♦ rDS(ON) ♦ rDS(ON) VGS=2.5V, ID=50mA 1.3 1.9 ♦ rDS(ON) VGS=5.0V, ID=50mA 1.1 1.5 gFS VDS=10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.0MHz 5.0 Ciss VDS=25V, VGS=0, f=1.0MHz 50 Coss VDS=25V, VGS=0, f=1.0MHz 25 UNITS nA μA μA nA V V V Ω Ω Ω mS pF pF pF ♦ Enhanced specification Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R2 (18-January 2010) CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMLDM7003E (USA Pinout) CMLDM7003JE (Japanese Pinout) LEAD CODE: 1) Gate Q1 2) Source Q1 3) Drain Q2 4) Gate Q2 5) Source Q2 6) Drain Q1 LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: C73 MARKING CODE: C7J R2 (18-January 2010) w w w. c e n t r a l s e m i . c o m