CEDM7001 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low theshold voltage. MARKING CODE: H COMPLEMENTARY P-CHANNEL: CEDM8001 SOT-883L CASE APPLICATIONS: • Load/Power switches • DC - DC converters • Battery powered portable equipment FEATURES: • 100mW Power Dissipation • 0.4mm low package profile • Low rDS(ON) • Low threshold voltage • Logic level compatible • Small leadless surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Peak Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature SYMBOL VDS VGS ID IDM PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=10V, VDS=0 IDSS VDS=20V, VGS=0 BVDSS VGS=0, ID=100μA VGS(th) VDS=VGS, ID=250μA rDS(ON) VGS=4.0V, ID=10mA rDS(ON) VGS=2.5V, ID=10mA rDS(ON) VGS=1.5V, ID=1.0mA gFS VDS=10V, ID=100mA Crss VDS=3.0V, VGS=0, f=1.0MHz Ciss VDS=3.0V, VGS=0, f=1.0MHz Coss VDS=3.0V, VGS=0, f=1.0MHz Qg(tot) VDS=10V, VGS=4.5V, ID=100mA Qgs VDS=10V, VGS=4.5V, ID=100mA Qgd VDS=10V, VGS=4.5V, ID=100mA ton VDD=3.0V, VGS=2.5V, ID=10mA toff VDD=3.0V, VGS=2.5V, ID=10mA UNITS V V mA mA mW °C 20 10 100 200 100 -65 to +150 otherwise noted) MIN TYP 20 0.6 0.9 1.3 100 4.0 9.0 9.5 0.566 0.16 0.08 50 75 MAX 1.0 1.0 0.9 3.0 4.0 15 UNITS μA μA V V Ω Ω Ω mS pF pF pF nC nC nC ns ns R9 (19-September 2014) CEDM7001 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-883L CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: H Package Type Options (all dimensions are maximum - in mm) Package Length Width Height SOT-883L 1.05 0.65 0.40 PD (mW) 100 Central Item Number SOT-883VL 1.05 0.65 0.32 100 CEDM7001VL SOT-953 1.05 1.05 0.50 250 CMNDM7001 SOT-523 1.70 1.70 0.78 250 CMUDM7001 CEDM7001 R9 (19-September 2014) w w w. c e n t r a l s e m i . c o m CEDM7001 SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R9 (19-September 2014) w w w. c e n t r a l s e m i . c o m