CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM302PH is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING CODE: 302C SOT-23F CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (0.129Ω MAX @ VGS=2.5V) • High current (ID=2.4A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS 30 UNITS V VGS ID 12 V 2.4 A 9.6 A 350 mW Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs IDM PD Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA -55 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS BVDSS VGS(th) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VDS=20V, VGS=0 VGS=0, ID=250μA VGS=VDS, VGS=4.5V, MAX 100 UNITS nA 1.0 μA 1.4 V 30 ID=250μA V 0.7 ID=1.2A 0.050 0.091 Ω VGS=2.5V, ID=1.2A VDS=5.0V, ID=2.4A 0.066 0.129 Ω 4.6 S VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz 69 pF 800 pF VDS=10V, VGS=0, f=1.0MHz VDD=10V, VGS=5.0V, ID=2.4A 7.0 9.6 nC ID=2.4A 1.4 4.2 nC ID=2.4A 1.5 2.6 nC VDD=10V, VDD=10V, VGS=5.0V, VGS=5.0V, VDD=10V, ID=2.4A, RG=10Ω VDD=10V, ID=2.4A, RG=10Ω 62 12 17 pF ns ns R1 (11-December 2012) CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23F CASE - MECHANICAL OUTLINE 2 1 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 302C R1 (11-December 2012) w w w. c e n t r a l s e m i . c o m