Technical Data Sheet

SCT30N120
Silicon carbide Power MOSFET:
45 A, 1200 V, 90 mΩ (typ., TJ=150 °C), N-channel in HiP247™
Datasheet - production data
Features
• Very tight variation of on-resistance vs.
temperature
• Slight variation of switching losses vs.
temperature
2
• Very high operating temperature capability
(200 °C)
3
1
• Very fast and robust intrinsic body diode
• Low capacitance
HiP247™
• Easy to drive
Figure 1. Internal schematic diagram
'
Applications
•
Solar inverters, UPS
•
Motor drives
•
High voltage DC-DC converters
•
Switch mode power supply
Description
*
6
$0Y
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and very
good switching performance almost independent
of temperature. The outstanding thermal
properties of the SiC material, combined with the
device’s housing in the proprietary HiP247™
package, allows designers to use an industrystandard outline with significantly improved
thermal capability. These features render the
device perfectly suitable for high-efficiency and
high power density applications.
Table 1. Device summary
Note:
Order code
Marking
Package
Packaging
SCT30N120
SCT30N120
HiP247™
Tube
The device meets ECOPACK standards, an environmentally-friendly grade of products
commonly referred to as “halogen-free”. See Section 3: Package mechanical data.
February 2015
This is information on a product in full production.
DocID023109 Rev 9
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www.st.com
13
Contents
SCT30N120
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
DocID023109 Rev 9
SCT30N120
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
1200
V
VGS
Gate-source voltage
-10/+25
V
ID
Drain current (continuous) at TC = 25 °C
(limited by die)
45
A
ID
Drain current (continuous) at TC = 25 °C
(limited by package)
40
A
ID
Drain current (continuous) at TC = 100 °C
34
A
IDM (1)
Drain current (pulsed)
90
A
PTOT
Total dissipation at TC = 25 °C
270
W
Tstg
Tj
Storage temperature
°C
-55 to 200
Operating junction temperature
°C
1. Pulse width limited by safe operating area.
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
DocID023109 Rev 9
Value
Unit
0.65
°C/W
40
°C/W
3/13
Electrical characteristics
2
SCT30N120
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4. On/off states
Symbol
Parameter
Test conditions
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 1200 V
VDS = 1200 V, TJ = 200 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = +22 / -10 V
Gate threshold voltage
VDS = VGS, ID = 1 mA
VGS(th)
RDS(on)
Static drain-source
on- resistance
Min.
1.8
Typ.
Max.
Unit
1
50
100
µA
µA
100
nA
3.5
V
VGS = 20 V, ID = 20 A
80
VGS = 20 V, ID = 20 A,
TJ = 150 °C
90
mΩ
VGS = 20 V, ID = 20 A,
TJ = 200 °C
100
mΩ
100
mΩ
Table 5. Dynamic
Symbol
4/13
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Rg
Gate input resistance
Test conditions
VDS = 400 V, f = 1 MHz,
VGS = 0
Min.
Typ.
Max.
Unit
-
1700
-
pF
-
130
-
pF
-
25
-
pF
-
105
-
nC
VDD = 800 V, ID = 20 A,
VGS = 0 / 20 V
-
16
-
nC
-
40
-
nC
f=1 MHz open drain
-
5
-
Ω
DocID023109 Rev 9
SCT30N120
Electrical characteristics
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Eon
Turn-on switching losses
Eoff
Turn-off switching losses
Eon
Turn-on switching losses
Eoff
Turn-off switching losses
Min.
Typ.
-
500
-
µJ
-
350
-
µJ
-
500
-
µJ
-
400
-
µJ
VDD = 800 V, ID = 20 A
RG= 6.8 Ω, VGS = -2/20 V
VDD = 800 V, ID = 20 A
RG= 6.8 Ω, VGS = -2/20 V
TJ= 150 °C
Max. Unit
Table 7. Switching times
Symbol
td(on)V
tf(V)
td(off)V
tr(V)
Parameter
Test conditions
Turn-on delay time
Fall time
VDD = 800 V, ID = 20 A,
RG = 0 Ω, VGS = 0/20 V
Turn-off delay time
Rise time
Min.
Typ.
Max. Unit
-
19
-
ns
-
28
-
ns
-
45
-
ns
-
20
-
ns
Table 8. Reverse SiC diode characteristics
Symbol
Parameter
VSD
Diode forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Test conditions
IF = 10 A, VGS = 0
ISD = 20 A, di/dt = 100 A/µs
VDD = 800 V
DocID023109 Rev 9
Min
Typ.
Max
Unit
-
3.5
-
V
-
140
-
140
-
nC
-
2
-
A
ns
5/13
Electrical characteristics
2.1
SCT30N120
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM17527v1
ID
(A)
AM17526v1
)
(on
0.5
DS
Op
Lim erati
ite on i
db nt
y m his
ax are
a
R
is
K
10
0.4
100μs
0.3
1ms
0.2
1
10ms
Single pulse
0.1
Single pulse
0.1
0.1
10
1
100
VDS(V)
1000
Figure 4. Output characteristics (TJ=25°C)
AM17518v1
ID (A)
VGS=20V
0
-6
10
10
-5
-4
10
-3
10
-2
10
-1
tp (s)
Figure 5. Output characteristics (TJ=150°C)
*,3')65
,' $
18V
9
9*6 9
70
10
9
60
9
16V
50
40
30
14V
20
10
0
0
2
4
6
8
12V
10V
12 VDS(V)
10
Figure 6. Output characteristics (TJ=200°C)
GIPD180220151506FSR
ID (A)
18V
70
9
9'69
Figure 7. Transfer characteristics
AM17521v1
ID
(A)
55
VDS=12V
25°C
45
40
14V
50
35
30
40
12V
30
150°C
25
20
20
200°C
15
10V
10
6/13
50
16V
VGS=20V
60
0
0
9
2
4
6
8
10
12
VDS(V)
10
5
0
DocID023109 Rev 9
0
2
4
6
8
10 12 14 16 18 VGS(V)
SCT30N120
Electrical characteristics
Figure 8. Power dissipation
Figure 9. Gate charge vs gate-source voltage
AM17525v1
PD (W)
TJ=200°C
250
AM17529v1
VGS
(V)
VDD=800V
ID=20A
16
200
12
150
8
100
4
50
0
-50
0
50
100
0
TC(°C)
150
Figure 10. Capacitance variations
40
20
0
60
80
100
Figure 11. Switching energy vs. drain current
AM17528v1
C
(pF)
Qg(nC)
AM17530v1
E (μJ)
Ciss
Etot
VGS=-2V/20V
TJ=25°C , RG=6.8Ω
VDD=VCLAMP=800V
800
f= 1MHz
700
600
1000
Eon
500
400
Coss
Eoff
300
100
200
Crss
10
0
200
400
600
800
0
0
VDS(V)
Figure 12. Switching energy vs. junction
temperature
AM17531v1
E (μJ)
1100
1000
100
2
4
6
8 10 12 14 16 18 ID(A)
Figure 13. Normalized V(BR)DSS vs. temperature
AM17523v1
V(BR)DSS
(norm)
1.04
VGS=-2V/20V
ID=20V , RG=6.8Ω
VDD=VCLAMP=800V
Etot
900
800
700
ID=1mA
1.02
1.00
600
500
Eon
400
Eoff
0.98
300
0.96
200
100
0
25
0.94
50
75
100
125
TJ(°C)
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0
50
100
150
TJ(°C)
7/13
Electrical characteristics
SCT30N120
Figure 14. Normalized gate threshold voltage
vs. temperature
AM17522v1
VGS(th)
(norm)
1.6
ID=1mA
Figure 15. Normalized on-resistance vs.
temperature
AM17520v1
RDS(on)
(norm)
VGS=20V
3.2
1.4
2.8
1.2
2.4
1.0
2.0
0.8
1.6
0.6
1.2
0.4
0.8
0.2
0.4
0
25
0
-50
0
50
100
TJ(°C)
150
Figure 16. Body diode characteristics
(TJ=-50°C)
9'6 9 75
50
100 125
175 TJ(°C)
150
Figure 17. Body diode characteristics (TJ=25°C)
VDS (V) -6
-5
-3
-4
-2
9*6 9
-1
0
0
VGS=0V
9*6 9
-5
VGS=-5V
9*6 9
VGS=-2V
-10
-15
,'6$
Figure 18. Body diode characteristics
(TJ=150°C)
9'6 9 IDS(A)
AM17524v1
Figure 19. 3rd quadrant characteristics
(TJ=-50°C)
9'6 9 9*6 9
9*6 9
9*6 9
9*6 9
9
9
9
8/13
,'6$
9
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,'$
SCT30N120
Electrical characteristics
Figure 20. 3rd quadrant characteristics
(TJ=25°C)
9'6 9 Figure 21. 3rd quadrant characteristics
(TJ=150°C)
9'6 9 9
9
9*6 9
9
9
9*6 9
9
9
9
9
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Package mechanical data
3
SCT30N120
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 22. HiP247™ outline
8396756_A
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DocID023109 Rev 9
SCT30N120
Package mechanical data
Table 9. HiP247™ mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID023109 Rev 9
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11/13
Revision history
4
SCT30N120
Revision history
Table 10. Document revision history
12/13
Date
Revision
Changes
10-May-2012
1
First release
21-May-2013
2
Updated trr value in Table 8.
Updated dynamic parameters in Table 5, VGS(th) in Table 4 and
Eon in Table 6.
24-Jun-2013
3
Document status promoted from target to preliminary data.
Added: Section 2.1: Electrical characteristics (curves)
11-Jul-2013
4
Updated Figure 6: Output characteristics (TJ=200°C) and
Figure 7: Transfer characteristics.
18-Dec-2013
5
Updated parameters in Table 2: Absolute maximum ratings and
Table 4: On/off states.
27-May-2014
6
Added Table 7: Switching times.
Updated Section 3: Package mechanical data.
Minor text changes.
25-Sep-2014
7
Document status promoted from preliminary to production data.
17-Feb-2015
8
Updated title in cover page.
20-Feb-2015
9
Updated Section 2.1: Electrical characteristics (curves).
DocID023109 Rev 9
SCT30N120
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