STY139N65M5 N-channel 650 V, 0.014 Ω typ., 130 A, MDmesh™ V Power MOSFET in Max247 package Datasheet — production data Features Order code VDS @TjMAX RDS(on) max ID STY139N65M5 710 V 0.017 Ω 130 A ■ Max247 worldwide best RDS(on) ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested 1 2 3 Max247 Applications ■ Figure 1. Switching applications Internal schematic diagram Description $ The device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STY139N65M5 139N65M5 Max247 Tube January 2013 This is information on a product in full production. Doc ID 022826 Rev 4 1/13 www.st.com 13 Contents STY139N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 022826 Rev 4 STY139N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 130 A ID Drain current (continuous) at TC = 100 °C 78 A IDM (1) Drain current (pulsed) 520 A PTOT Total dissipation at TC = 25 °C 625 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 17 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 2400 mJ 15 V/ns - 55 to 150 °C 150 °C Value Unit Rthj-case Thermal resistance junction-case max 0.2 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W 300 °C VGS dv/dt(2) Tstg Tj Parameter Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 130 A, di/dt = 400 A/µs, VDD = 400 V, peak VDS < V (BR)DSS. Table 3. Symbol Tl Thermal data Parameter Maximum lead temperature for soldering purpose Doc ID 022826 Rev 4 3/13 Electrical characteristics 2 STY139N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.014 0.017 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 65 A resistance Table 5. Symbol 3 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 15600 365 9 - pF pF pF Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 1559 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 360 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.2 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 65 A, VGS = 10 V (see Figure 15) - 363 88 164 - nC nC nC Ciss Coss Crss 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/13 Doc ID 022826 Rev 4 STY139N65M5 Electrical characteristics Table 6. Symbol td(v) tr(v) tf(i) tc(off) Table 7. Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 80 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 295 56 37 84 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 130 520 A A ISD = 130 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 130 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) - 570 15 53 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 130 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) - 720 24 68 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022826 Rev 4 5/13 Electrical characteristics STY139N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Tj=150°C Tc=25°C Single pulse O p Li era m ite tion d by in t m his ax a R rea D S( is on ) 10 AM09125v1 AM12612v1 ID (A) 100 Thermal impedance K δ=0.5 0.2 0.1 100µs 1ms 0.05 -1 10 0.02 10ms 0.01 Zth=k Rthj-c δ=tp/τ Single pulse 1 tp τ 0.1 0.1 Figure 4. -2 10 1 100 VDS(V) Output characteristics 10 -4 10 ID (A) VGS=10V 300 -1 10 10 Figure 5. AM08893v2 -2 -3 tp (s) 10 Transfer characteristics AM08894V2 ID (A) VDS=30V 300 8V 250 250 200 200 7V 150 150 100 100 6V 50 50 5V 0 0 Figure 6. 5 10 15 0 VDS(V) Normalized BVDSS vs temperature AM10399v1 VDS (norm) 3 Figure 7. 4 6 8 7 9 VGS(V) Static drain-source on resistance AM12613V1 RDS(on) (Ω) 1.08 ID = 1mA 5 VGS=10V 0.016 1.06 1.04 0.015 1.02 0.014 1.00 0.013 0.98 0.96 0.012 0.94 0.92 -50 -25 6/13 0 25 50 75 100 TJ(°C) 0.011 0 Doc ID 022826 Rev 4 20 40 60 80 100 ID(A) STY139N65M5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM12614v1 VGS (V) VDS VDS (V) VDD=520V ID=65A 12 10 Capacitance variations AM12615v1 C (pF) 500 100000 400 10000 300 1000 200 100 100 10 Ciss 8 6 Coss 4 2 0 0 100 200 300 400 1 0.1 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM08899v1 VGS(th) (norm) Crss 1 100 10 VDS(V) Figure 11. Normalized on resistance vs temperature AM08900v1 RDS(on) (norm) 1.10 2.1 ID= 250µA ID = 65A VGS= 10V 1.00 1.7 0.90 1.3 0.80 0.9 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Output capacitance stored energy 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 13. Switching losses vs gate resistance (1) AM12617v1 AM12616v1 Eoss (µJ) 70 E (μJ) 8000 7000 60 Eon ID=80A VDD=400V TJ=25°C 6000 50 5000 Eoff 40 4000 30 3000 20 2000 10 1000 0 0 100 200 300 400 500 600 VDS(V) 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. Doc ID 022826 Rev 4 7/13 Test circuits 3 STY139N65M5 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 19. Switching time waveform #ONCEPTWAVEFORMFOR)NDUCTIVE,OAD4URNOFF )D VD )D 6DS OFF 4DELAYOFF IDM 6GS 6GS ON ID 6GS)T VDD VDD 6DS )D 6DS 4R ISE AM01472v1 8/13 Doc ID 022826 Rev 4 4FALL 4CROSS OVER !-V STY139N65M5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 022826 Rev 4 9/13 Package mechanical data Table 8. STY139N65M5 Max247 mechanical data mm Dim. Min. 10/13 Typ. Max. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 Doc ID 022826 Rev 4 STY139N65M5 Package mechanical data Figure 20. Max247 drawing 0094330_Rev_D Doc ID 022826 Rev 4 11/13 Revision history 5 STY139N65M5 Revision history Table 9. 12/13 Document revision history Date Revision Changes 09-Mar-2012 1 First release. 04-Apr-2012 2 Inserted new Section 2.1: Electrical characteristics (curves). Updated Section 4: Package mechanical data. 19-Apr-2012 3 Document promoted from preliminary data to production data. Updated Section 4: Package mechanical data. 24-Jan-2013 4 – Minor text changes – Modified: IAR EAS values on Table 2 Doc ID 022826 Rev 4 STY139N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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