STMICROELECTRONICS STP85NF55L

STB85NF55L
STP85NF55L
N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D2PAK
STripFET™ II Power MOSFET
Features
■
Type
VDSS
RDS(on)
max
ID
STB85NF55L
55 V
< 0.008 Ω
80 A
STP85NF55L
55 V
< 0.008 Ω
80 A
1
2
1
D²PAK
TO-220
Application
■
3
3
Low threshold drive
Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "single feature size"
strip-based process. The resulting
transistorshows extremely high packing density
for low on-resistance, rugged avalanche
characteristics andless critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Figure 1.
Internal schematic diagram
$4!"OR
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STB85NF55LT4
B85NF55L
D²PAK
Tape and reel
STP85NF55L
P85NF55L
TO-220
Tube
August 2009
Doc ID 8544 Rev 8
1/14
www.st.com
14
Contents
STB85NF55L, STP85NF55L
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 8
Doc ID 8544 Rev 8
STB85NF55L, STP85NF55L
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
Value
Unit
55
V
± 15
V
(1)
Drain current (continuous) at TC = 25 °C
80
A
ID(1)
Drain current (continuous) at TC=100 °C
80
A
Drain current (pulsed)
320
A
Total dissipation at TC = 25 °C
300
W
Derating factor
2.0
W/°C
10
V/ns
Single pulse avalanche energy
980
mJ
Operating junction temperature
Storage temperature
-55 to 175
°C
ID
IDM
(2)
PTOT
dv/dt (3) Peak diode recovery voltage slope
EAS
(4)
TJ
Tstg
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
4.
Starting TJ = 25 °C, ID = 40 A, VDD = 40 V
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
D2PAK
TO-220
Rthj-case Thermal resistance junction-case max.
0.5
°C/W
Rthj-amb Thermal resistance junction-ambient max.
62.5
°C/W
Rthj-pcb Thermal resistance junction-pcb
Tl
max.(1)
Maximum lead temperature for soldering purpose
35
°C/W
300
°C
1. When mounted on 1inch² FR-4 2Oz Cu board
Doc ID 8544 Rev 8
3/14
Electrical characteristics
2
STB85NF55L, STP85NF55L
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating @125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±15 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
V(BR)DSS
Table 5.
Symbol
Min.
Typ.
Max.
55
Unit
V
1
10
µA
µA
±100
nA
1.6
2.5
V
VGS= 10 V, ID= 40 A
0.0060
0.008
VGS= 5 V, ID= 40 A
0.008
0.01
1
Ω
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward transconductance
VDS = 15 V, ID = 40 A
-
130
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f = 1 MHz,
VGS = 0
-
4050
860
300
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 27.5 V, ID = 80 A
VGS = 5 V
80
20
45
110
-
nC
nC
nC
Min.
Typ.
Max.
Unit
-
35
165
70
55
-
ns
ns
ns
ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
Symbol
td(on)
tr
td(off)
tf
4/14
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 27.5 V, ID= 40 A,
RG=4.7 Ω, VGS= 5 V
Figure 14 on page 8
Doc ID 8544 Rev 8
STB85NF55L, STP85NF55L
Table 7.
Symbol
ISD
Source drain diode
Parameter
Test conditions
Min
Typ.
Max
Unit
Source-drain current
-
80
A
(1)
Source-drain current (pulsed)
-
320
A
(2)
Forward on voltage
ISD = 80 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 20 V, TJ = 150 °C
Figure 16 on page 8
-
ISDM
VSD
Electrical characteristics
trr
Qrr
IRRM
80
240
6
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 8544 Rev 8
5/14
Electrical characteristics
STB85NF55L, STP85NF55L
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
6/14
Doc ID 8544 Rev 8
STB85NF55L, STP85NF55L
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature
Doc ID 8544 Rev 8
7/14
Test circuits
3
STB85NF55L, STP85NF55L
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 16. Test circuit for inductive load
Figure 17. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 18. Unclamped inductive waveform
V(BR)DSS
VD
IDM
ID
VDD
VDD
AM01472v1
8/14
Doc ID 8544 Rev 8
AM01471v1
STB85NF55L, STP85NF55L
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 8544 Rev 8
9/14
Package mechanical data
STB85NF55L, STP85NF55L
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
10/14
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
Doc ID 8544 Rev 8
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.147
0.104
0.151
0.116
STB85NF55L, STP85NF55L
Package mechanical data
D2PAK (TO-263) mechanical data
Dim
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
mm
Min
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
in c h
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
Min
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
2.54
4.88
15
2.49
2.29
1.27
1.30
Typ
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
0079457_M
Doc ID 8544 Rev 8
11/14
Packaging mechanical data
5
STB85NF55L, STP85NF55L
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
12/14
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
MAX.
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.075 0.082
0.933 0.956
Doc ID 8544 Rev 8
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0795
26.4
0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB85NF55L, STP85NF55L
6
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
Changes
19-May-2009
7
New ECOPACK® statement in Section 4: Package mechanical
data
Content reworked to improve readability, no technical changes
06-Aug-2009
8
Table 3: Thermal data has been updated
Doc ID 8544 Rev 8
13/14
STB85NF55L, STP85NF55L
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2009 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14
Doc ID 8544 Rev 8