RENESAS 2SC5890

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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Technology Corporation product best suited to the customer's application; they do not convey any
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circuit application examples contained in these materials.
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contained therein.
2SC5890
Silicon NPN Epitaxial
UHF / VHF wide band amplifier
ADE-208-1533 (Z)
1st. Edition
Aug.2002
Features
• High gain bandwidth product:
fT = 7.8 GHz typ.
• High power gain and low noise figure;
PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz
• High collector power dissipation:
Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm)
• High withstanding to ESD of collector to emitter:
Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition.
Outline
MPAK
3
1
2
Note: Marking is “FS-”.
1. Emitter
2. Base
3. Collector
2SC5890
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
12
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
75
mA
Collector power dissipation
Pc
700*
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
*When using alumina ceramic board (25 x 60 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V(BR)CBO
20
—
—
V
IC = 10µ A, IE = 0
Collector cutoff current
ICBO
—
—
1
µA
VCB = 12 V, IE = 0
Collector cutoff current
ICEO
—
—
1
mA
VCE = 9 V, RBE = ∞
Emitter cutoff current
IEBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
100
150
200
V
VCE = 5 V, IC = 20 mA
Collector output capacitance
Cob
—
0.9
1.5
pF
VCB = 5 V, IE = 0, f = 1 MHz
Reverse transfer capacitance
Cre
—
0.85
—
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
5.5
7.8
—
GHz
VCE = 5 V, IC = 30 mA,
f = 1 GHz
Forward transfer coefficient
S21
—
11
—
dB
VCE = 5 V, IC = 30 mA,
f = 1 GHz
Power gain
PG
9.5
12
—
dB
VCE = 5 V, IC = 30 mA,
f = 900 MHz
Noise figure
NF
—
1.0
1.9
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Rev.0, Aug. 2002, page 2 of 14
2
2SC5890
DC Current Transfer Ratio vs.
Collector Current
200
800
when using alumina ceramic board:
S = 25 mm X 60 mm, t = 0.7 mm
600
VCE = 5 V
DC Current T hFE
Collector Power Dissipation
Pc (mW)
Collector Power Dissipation Curve
3V
100
400
200
0
50
0
100
150
Ambient Temperature
200
1
10
20
50
IC
(mA)
100
Gain Bandwidth Product vs.
Collector Current
(GHz)
10
IE = 0
f = 1 MHz
VCE = 5 V
8
fT
(pF)
Cob
2.4
Gain Bandwidth Product
Collector Output Capacitance
3.2
5
Collector Current
Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
4.0
2
1.6
0.8
0
0.1
0.2
0.5
1
2
Collector to Base Voltage
5
VCB
10
(V)
3V
6
4
2
0
1
2
5
10
Collector Current
20
50
IC
(mA)
100
Rev.0, Aug. 2002, page 3 of 14
2SC5890
Power Gain vs. Collector Current
20
Noise Figure vs. Collector Current
5
f = 900 MHz
f = 900 MHz
Noise Figure NF (dB)
Power Gain
PG (dB)
16
VCE = 5 V
12
3V
8
4
0
1
3
VCE = 3 V
2
5V
1
0
10
20
50
Collector Current
IC
(mA)
2
5
100
f = 1 GHz
16
VCE = 5 V
12
3V
8
4
0
1
2
5
10
Collector Current
Rev.0, Aug. 2002, page 4 of 14
20
50
IC (mA)
1
2
5
10
Collector Current
S21 Parameter vs. Collector Current
20
S21 Parameter | S21 |2 (dB)
4
100
20
50
IC
(mA)
100
2SC5890
S11 Parameter vs. Frequency
.8
S21 Parameter vs. Frequency
1
Scale: 8.0 / div.
90˚
1.5
.6
60˚
120˚
2
.4
3
30˚
150˚
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
180˚
0˚
–10
–5
–4
–3
–.2
–30˚
–150˚
–.4
–2
–.6
–.8
–120˚
–1.5
–60˚
–1
–90˚
Condition: VCE = 3 V, ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 10 mA)
(IC = 30 mA)
(IC = 50 mA)
Condition: VCE = 3 V, ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 10 mA)
(IC = 30 mA)
(IC = 50 mA)
S12 Parameter vs. Frequency
90˚
S22 Parameter vs. Frequency
Scale: 0.08 / div.
.8
1
1.5
.6
60˚
120˚
2
.4
3
30˚
150˚
4
5
.2
10
180˚
0˚
.2
0
.4
.6 .8 1
1.5 2
3 45
–10
–5
–4
–3
–.2
–30˚
–150˚
–.4
–2
–120˚
–60˚
–90˚
Condition: VCE = 3 V, ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 10 mA)
(IC = 30 mA)
(IC = 50 mA)
–.6
–.8
–1.5
–1
Condition: VCE = 3 V, ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 10 mA)
(IC = 30 mA)
(IC = 50 mA)
Rev.0, Aug. 2002, page 5 of 14
2SC5890
S11 Parameter vs. Frequency
.8
S21 Parameter vs. Frequency
1
Scale: 8.0 / div.
90˚
1.5
.6
60˚
120˚
2
.4
3
30˚
150˚
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
180˚
0˚
–10
–5
–4
–3
–.2
–30˚
–150˚
–.4
–2
–.6
–.8
–120˚
–1.5
–60˚
–1
–90˚
Condition: VCE = 5 V, ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 10 mA)
(IC = 30 mA)
(IC = 50 mA)
Condition: VCE = 5 V, ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 10 mA)
(IC = 30 mA)
(IC = 50 mA)
S12 Parameter vs. Frequency
90˚
S22 Parameter vs. Frequency
Scale: 0.08 / div.
.8
1
1.5
.6
60˚
120˚
2
.4
3
30˚
150˚
4
5
.2
10
180˚
0˚
.2
0
.4
.6 .8 1
1.5 2
3 45
–10
–5
–4
–3
–.2
–30˚
–150˚
–.4
–2
–120˚
–60˚
–90˚
Condition: VCE = 5 V, ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 10 mA)
(IC = 30 mA)
(IC = 50 mA)
Rev.0, Aug. 2002, page 6 of 14
–.6
–.8
–1.5
–1
Condition: VCE = 5 V, ZO = 50 Ω
100 to 2000 MHz (100 MHz Step)
(IC = 10 mA)
(IC = 30 mA)
(IC = 50 mA)
2SC5890
S parameter
(VCE = 3V, IC = 10 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.635
-75.2
19.73
130.5
0.042
55.9
0.698
-51.2
200
0.524
-115.1
12.64
109.7
0.058
49.5
0.455
-70.6
300
0.483
-138.4
8.86
98.7
0.071
50.6
0.330
-80.4
400
0.462
-152.3
6.82
91.6
0.083
52.8
0.266
-86.8
500
0.454
-162.6
5.51
86.4
0.096
55.2
0.226
-91.9
600
0.448
-170.5
4.63
81.9
0.108
56.8
0.201
-96.3
700
0.451
-176.9
4.01
78.0
0.121
58.2
0.185
-99.5
800
0.448
177.1
3.54
74.2
0.134
59.0
0.175
-103.3
900
0.453
171.7
3.17
71.5
0.149
59.8
0.169
-106.3
1000
0.452
168.6
2.87
68.2
0.162
60.0
0.163
-109.9
1100
0.453
163.6
2.63
65.1
0.176
60.3
0.161
-112.3
1200
0.459
158.8
2.43
62.5
0.190
60.4
0.162
-116.0
1300
0.460
155.4
2.27
59.8
0.204
60.1
0.160
-118.1
1400
0.464
151.8
2.13
57.4
0.218
60.0
0.162
-121.1
1500
0.469
148.8
2.00
54.8
0.232
59.5
0.162
-124.7
1600
0.474
145.5
1.89
52.2
0.246
58.8
0.167
-126.3
1700
0.477
143.0
1.80
49.9
0.260
58.6
0.169
-129.4
1800
0.482
139.0
1.72
47.9
0.274
57.9
0.172
-132.4
1900
0.491
136.7
1.65
45.6
0.288
57.1
0.177
-134.6
2000
0.490
133.2
1.59
43.5
0.302
56.6
0.179
-137.2
Rev.0, Aug. 2002, page 7 of 14
2SC5890
(VCE = 3V, IC = 30 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.449
-118.4
27.19
113.3
0.029
57.1
0.459
-76.8
200
0.431
-150.0
15.04
98.0
0.043
61.4
0.270
-98.5
300
0.429
-165.1
10.09
90.5
0.060
65.3
0.199
-112.0
400
0.428
-174.1
7.63
85.6
0.076
67.0
0.170
-121.5
500
0.430
179.3
6.12
81.7
0.093
67.6
0.152
-129.4
600
0.421
174.0
5.12
78.2
0.110
67.9
0.144
-135.4
700
0.431
169.6
4.42
75.3
0.126
67.8
0.139
-139.6
800
0.428
165.6
3.89
72.2
0.143
67.4
0.138
-144.1
900
0.438
161.3
3.48
69.8
0.160
66.9
0.137
-146.7
1000
0.436
157.8
3.15
66.9
0.176
65.9
0.138
-150.7
1100
0.436
154.0
2.88
64.2
0.193
65.3
0.138
-152.5
1200
0.445
150.5
2.66
62.3
0.209
64.3
0.142
-155.5
1300
0.446
147.5
2.49
59.7
0.225
63.4
0.141
-157.2
1400
0.446
144.6
2.33
57.5
0.240
62.5
0.146
-159.1
1500
0.451
141.6
2.19
55.0
0.256
61.2
0.148
-162.0
1600
0.454
138.6
2.07
53.0
0.272
60.2
0.151
-162.2
1700
0.457
136.2
1.98
50.6
0.287
59.3
0.155
-164.6
1800
0.459
132.6
1.88
49.0
0.301
58.2
0.158
-166.8
1900
0.473
130.7
1.80
46.6
0.317
57.0
0.163
-167.7
2000
0.465
127.4
1.73
44.9
0.331
55.9
0.165
-169.7
Rev.0, Aug. 2002, page 8 of 14
2SC5890
(VCE = 3V, IC = 50 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.424
-136.3
28.25
108.0
0.025
60.4
0.382
-86.3
200
0.426
-160.8
15.12
94.5
0.041
65.8
0.225
-108.8
300
0.433
-171.8
10.08
88.0
0.058
69.0
0.172
-122.9
400
0.437
-179.2
7.59
83.5
0.076
70.1
0.152
-132.5
500
0.440
175.1
6.09
80.1
0.093
70.2
0.141
-140.5
600
0.435
170.8
5.08
76.8
0.110
69.9
0.138
-146.0
700
0.443
166.5
4.39
73.9
0.128
69.4
0.134
-149.8
800
0.441
162.8
3.86
70.9
0.145
68.6
0.135
-153.3
900
0.446
158.4
3.44
68.4
0.163
67.8
0.136
-155.4
1000
0.447
155.7
3.11
65.9
0.179
66.8
0.138
-159.5
1100
0.444
152.5
2.86
63.3
0.196
65.9
0.138
-160.9
1200
0.455
148.4
2.64
61.0
0.212
64.8
0.143
-163.1
1300
0.455
145.9
2.47
58.5
0.229
63.6
0.142
-164.6
1400
0.463
142.3
2.31
56.5
0.244
62.7
0.147
-166.3
1500
0.462
140.1
2.17
54.0
0.261
61.3
0.151
-169.0
1600
0.466
137.4
2.05
51.9
0.276
60.3
0.153
-169.0
1700
0.469
135.1
1.97
50.0
0.291
59.1
0.157
-171.3
1800
0.474
131.2
1.87
48.3
0.306
58.0
0.161
-173.0
1900
0.481
129.6
1.79
46.0
0.321
56.7
0.165
-173.5
2000
0.476
126.4
1.72
44.0
0.336
55.6
0.166
-176.0
Rev.0, Aug. 2002, page 9 of 14
2SC5890
(VCE = 5V, IC = 10 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.643
-69.1
20.28
134.6
0.038
60.7
0.719
-40.0
200
0.512
-107.8
13.36
113.9
0.053
54.0
0.485
-55.1
300
0.460
-130.9
9.51
102.7
0.064
54.8
0.362
-61.6
400
0.433
-146.9
7.33
95.6
0.075
57.2
0.295
-64.8
500
0.421
-157.7
5.96
90.2
0.087
59.4
0.256
-66.7
600
0.411
-166.4
5.01
85.6
0.098
61.2
0.230
-68.5
700
0.414
-173.0
4.34
81.7
0.111
62.2
0.212
-70.4
800
0.414
-179.6
3.83
78.0
0.123
63.5
0.200
-72.5
900
0.419
174.3
3.43
75.0
0.136
64.1
0.192
-74.5
1000
0.414
170.8
3.10
71.8
0.149
64.5
0.186
-76.9
1100
0.421
166.3
2.84
68.8
0.161
64.8
0.182
-78.9
1200
0.420
161.3
2.63
66.0
0.175
64.9
0.180
-81.9
1300
0.424
157.6
2.45
63.3
0.188
64.7
0.178
-84.6
1400
0.428
154.2
2.29
61.2
0.201
64.6
0.179
-87.2
1500
0.435
150.5
2.16
58.4
0.214
64.2
0.178
-90.2
1600
0.439
147.4
2.03
56.0
0.227
63.9
0.180
-93.1
1700
0.444
144.2
1.94
53.8
0.240
63.6
0.181
-96.2
1800
0.450
140.1
1.85
51.5
0.254
63.0
0.182
-99.2
1900
0.454
137.5
1.77
49.4
0.267
62.5
0.185
-102.2
2000
0.458
134.0
1.69
47.3
0.281
62.0
0.187
-105.3
Rev.0, Aug. 2002, page 10 of 14
2SC5890
(VCE = 5V, IC = 30 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.430
-108.9
28.25
118.1
0.026
61.8
0.482
-59.0
200
0.387
-142.7
16.05
102.5
0.040
65.5
0.283
-72.0
300
0.380
-158.5
10.90
94.7
0.055
69.2
0.205
-77.8
400
0.374
-168.7
8.27
89.8
0.070
70.7
0.165
-81.7
500
0.375
-176.5
6.67
85.8
0.085
71.8
0.143
-84.6
600
0.376
177.6
5.59
82.3
0.101
72.1
0.130
-87.9
700
0.384
172.9
4.82
79.4
0.116
71.7
0.121
-90.6
800
0.383
167.8
4.24
76.5
0.131
71.6
0.116
-93.5
900
0.388
164.0
3.78
73.8
0.147
71.3
0.112
-96.9
1000
0.385
159.5
3.43
70.9
0.162
70.6
0.111
-99.9
1100
0.390
155.7
3.13
68.4
0.177
69.7
0.111
-102.7
1200
0.398
152.4
2.90
66.2
0.192
69.2
0.111
-106.2
1300
0.396
148.1
2.70
63.8
0.207
68.2
0.112
-108.8
1400
0.406
146.2
2.53
61.7
0.221
67.4
0.114
-111.8
1500
0.407
142.5
2.37
59.2
0.236
66.4
0.115
-115.0
1600
0.408
139.8
2.25
57.1
0.250
65.4
0.118
-117.5
1700
0.414
137.8
2.13
54.9
0.265
64.4
0.122
-120.7
1800
0.420
133.6
2.04
53.1
0.278
63.5
0.124
-123.7
1900
0.428
131.5
1.94
50.9
0.292
62.5
0.128
-126.6
2000
0.427
128.4
1.86
49.2
0.306
61.3
0.131
-129.1
Rev.0, Aug. 2002, page 11 of 14
2SC5890
(VCE = 5V, IC = 50 mA, Zo = 50 Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.392
-125.2
30.12
111.6
0.023
62.6
0.411
-67.0
200
0.380
-153.9
16.44
97.6
0.037
67.6
0.235
-78.0
300
0.379
-167.5
11.03
90.8
0.053
70.8
0.170
-82.6
400
0.380
-175.1
8.33
86.2
0.069
72.1
0.139
-86.5
500
0.381
178.8
6.68
82.5
0.085
72.2
0.121
-89.3
600
0.381
173.2
5.59
79.4
0.100
72.3
0.111
-93.0
700
0.390
168.9
4.82
76.5
0.116
71.7
0.105
-95.3
800
0.389
165.1
4.25
73.5
0.132
71.1
0.102
-98.9
900
0.394
160.4
3.79
71.2
0.148
70.7
0.101
-101.5
1000
0.393
157.7
3.43
68.6
0.163
69.7
0.100
-105.7
1100
0.396
153.6
3.13
66.0
0.178
69.0
0.100
-107.8
1200
0.403
150.0
2.89
63.8
0.193
67.9
0.103
-111.8
1300
0.407
147.4
2.70
61.4
0.209
67.0
0.103
-113.8
1400
0.410
144.0
2.52
59.2
0.223
66.1
0.106
-117.1
1500
0.411
141.2
2.36
57.0
0.238
65.0
0.108
-120.5
1600
0.414
138.5
2.25
54.9
0.253
64.0
0.113
-122.6
1700
0.416
136.4
2.13
52.6
0.267
63.0
0.115
-125.9
1800
0.428
132.5
2.03
50.6
0.281
62.0
0.118
-128.8
1900
0.436
130.7
1.94
48.6
0.295
60.9
0.123
-131.2
2000
0.431
127.3
1.87
46.8
0.309
59.8
0.124
-134.1
Rev.0, Aug. 2002, page 12 of 14
2SC5890
Package Dimensions
As of January, 2002
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
JEITA
Mass (reference value)
MPAK(T)
—
Conforms
0.011 g
Rev.0, Aug. 2002, page 13 of 14
2SC5890
Disclaimer
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.0, Aug. 2002, page 14 of 14