STPS2045CH Power Schottky rectifier Datasheet − production data Description This device is a dual diode Schottky rectifier, suited to high frequency switch mode power supply. $ . $ Packaged in IPAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Table 1. Device summary $ . $ Symbol Value IF(AV) 2 x 10 A VRRM 45 V Tj 175 °C VF(typ) 0.57 V ,3$. Figure 1. Features • Very small conduction losses 9 • Avalanche specification , Electrical characteristics(a) , ©)RUZDUGª [ ,2 • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant on demand ; ,) ,2 9550 95 9$5 ; 9 , 5 97R 9),R 9) 9)[,R ©5HYHUVHª ,$5 a. VARM and IARM must respect the reverse safe operating area defined in Figure 9. VAR and IAR are pulse measurements (tp < 10 µs). VR, IR, VRRM and VF, are static characteristics October 2014 This is information on a product in full production. DocID023045 Rev 2 1/8 www.st.com 8 Characteristics 1 STPS2045CH Characteristics Table 2. Absolute ratings (limiting values, at 25 °C unless otherwise stated) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms current 20 A IF(AV) Average forward current, square wave, δ = 0.5 IFSM Tc = 155 °C Per diode 10 Tc = 150 °C Per package 20 A Surge non repetitive forward current tp = 10 ms sine-wave 150 A PARM (1) Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 280 W VARM (2) Maximum repetitive peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V -65 to + 150 °C 175 °C VASM(2) Tstg Storage temperature range Maximum operating junction temperature(3) Tj 1. For pulse time duration derating, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 9 1 dPtot < Rth(j-a) dTj 3. condition to avoid thermal runaway for a diode on its own heatsink Table 3. Thermal resistance Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value Per diode 2.5 Total 1.6 Unit °C/W 0.7 When the diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4. Static electrical characteristics Symbol IR (1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 125 °C VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C VR = VRRM IF = 10 A Typ. Max. Unit 100 μA 7 15 mA 0.5 0.57 0.84 IF = 20 A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% 2/8 Min. DocID023045 Rev 2 0.65 0.72 V STPS2045CH Characteristics To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.015 IF2(RMS) Figure 2. Average forward power dissipation versus average forward current (per diode) 3)$9 : į į į į ,)$9 $ 5 į WKMD 5 WKMF 7 7 į WS7 Figure 3. Average forward current versus ambient temperature (δ = 0.5, per diode) ,) $ $9 WS Figure 4. Normalized avalanche power derating versus pulse duration at Tj = 125 °C į WS7 WS WDPE& Figure 5. Relative variation of thermal impedance junction to case versus pulse duration =WKMF5WKMF 3DUPWS3DUPV 6LQJOHSXOVH WSV Figure 6. Reverse leakage current versus reverse voltage applied (typical values, per diode) ( W3V ( ( ,5$ ( &S) ) 0+] 9 P9 7 & M ( 26& 7 & M ( 506 7 & M 7 & M 7 & M ( 7 & M ( ( ( Figure 7. Junction capacitance versus reverse voltage applied (typical values, per diode) 7 & M ( ( 9 9 5 959 DocID023045 Rev 2 3/8 Characteristics STPS2045CH Figure 8. Forward voltage drop versus forward current (per diode) Figure 9. Reverse safe operating area (tp < 10 µs and Tj < 125 °C) , $ )0 ,DUP$ 7 &PD[LPXPYDOXHV M 7 &W\SLFDOYDOXHV M 7 &PD[LPXPYDOXHV M 4/8 9 )0 9DUP9 9 DocID023045 Rev 2 STPS2045CH 2 Package Information Package Information • Epoxy meets UL94, V0 • Lead-free package • ECOPACK®2 compliant component on demand In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 10. IPAK dimension definitions ( E $ F 9 / ' + / $ E H E H Note: / F This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. DocID023045 Rev 2 5/8 Package Information STPS2045CH Table 5. IPAK dimension values Dimensions Ref. Millimeters Min. Typ. Max. Min. Typ. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 b 0.64 0.90 0.025 0.035 b2 0.95 0.037 b4 5.20 5.43 0.204 0.213 c 0.45 0.60 0.017 0.023 c2 0.46 0.60 0.018 0.023 D 6 6.20 0.236 0.244 E 6.40 6.65 0.252 0.262 e e1 2.28 4.40 H 6/8 Inches 0.090 4.60 0.173 16.10 0.181 0.634 L 9 9.60 0.354 0.377 L1 0.8 1.20 0.031 0.047 L2 0.80 V1 10° 1.25 DocID023045 Rev 2 0.031 10° 0.049 STPS2045CH 3 Ordering information Ordering information Table 6. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPS2045CH S2045CH IPAK 0.35 g 75 Tube Revision history Table 7. Document revision history Date Revision Changes 21-Jun-2012 1 First issue. 09-Oct-2014 2 Updated Table 2 and IPAK package informations. DocID023045 Rev 2 7/8 STPS2045CH IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 8/8 DocID023045 Rev 2