STPS200170TV1 High voltage power Schottky rectifier Main product characteristics IF(AV) 2 x 100 A VRRM 170 V Tj 150 °C VF (typ) 0.63 V A1 K1 A2 K2 Features and benefits ■ Negligible switching losses ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop ■ Insulated package – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF Description High voltage Schottky rectifier suited for high frequency switch mode power supply. Packaged in ISOTOP, this device is intended for use in the secondary rectification of the applications. November 2005 A2 K2 A1 K1 ISOTOP Order codes Part Number Marking STPS200170TV1 STPS200170TV1 Rev 1 1/7 www.st.com 7 STPS200170TV1 1 Characteristics 1 Characteristics Table 1. Absolute ratings - limiting values per diode at Tamb = 25 °C, unless otherwise specified Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) RMS forward current 200 A 100 A 700 A 100000 W -55 to + 150 °C 150 °C IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal PARM Repetitive peak avalanche power Tstg Tj Tc = 105 °C per diode tp = 1 µs, Tj = 25 °C Storage temperature range Maximum operating junction temperature(1) dP tot thermal runaway condition for a diode on its own heatsink 1 --------------- < -------------------------dTj R th ( j – a ) 1. Table 2. Thermal parameters Symbol Parameter Value Rth(j-c) Junction to case Rth(c) Coupling thermal resistance Per diode 0.52 Total 0.31 Unit °C/W 0.1 When the diodes are used simultaneously: Tj(diode1) = P(diode1) X Rth(j-c) (per diode) + P(diode2) X Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 100 A Min. Typ 30 Max. Unit 200 µA 100 mA 0.83 0.63 IF = 200 A 0.68 0.975 0.78 V 0.86 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.5 x IF(AV) + 0.0018 IF2(RMS) 2/7 STPS200170TV1 Figure 1. 1 Characteristics Conduction losses versus average current (per diode) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) PF(AV)(W) 100 δ=0.05 90 δ=0.1 δ=0.2 δ=0.5 120 δ=1 Rth(j-a)=Rth(j-c) 100 80 70 80 60 50 60 40 40 30 T 20 T 20 10 IF(AV)(A) δ =tp/T δ=tp/T tp 0 0 20 Figure 3. 800 tp Tamb (°C) 0 40 60 80 100 120 Non-repetitive surge peak forward current vesus overload duration (maximum values per diode) 0 25 Figure 4. IM(A) 50 75 100 125 150 Relative variation of thermal impedance (junction to case) versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 700 0.8 600 0.7 500 δ=0.5 0.6 TC=50°C 400 0.5 0.4 300 TC=75°C δ=0.2 0.3 200 100 TC=125°C t 1.E-02 Figure 5. 1.E-01 1.E+00 Reverse leakage current versus reverse voltage applied (typical values per diode) IR(mA) Figure 6. 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Junction capacitances versus reverse voltage applied (typical values per diode) F=1MHz VOSC=30mVRMS Tj=25°C Tj=150°C 1.E+01 tp C(pF) 10000 1.E+03 1.E+02 0.0 1.E-04 δ=tp/T tP(s) Single pulse 0 1.E-03 0.1 t(s) d =0.5 T δ=0.1 0.2 IM Tj=125°C Tj=100°C 1.E+00 Tj=75°C 1000 1.E-01 Tj=50°C 1.E-02 Tj=25°C 1.E-03 VR(V) 1.E-04 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 VR(V) 100 1 10 100 1000 3/7 STPS200170TV1 1 Characteristics Figure 7. Forward voltage drop versus forward current (per diode, low level) Figure 8. Forward voltage drop versus forward current (per diode, high level) IFM(A) IFM(A) 1000 50 45 Tj=150°C (Maximum values) Tj=150°C (Maximum values) 40 35 Tj=150°C (Typical values) 100 Tj=150°C (Typical values) 30 Tj=25°C (Maximum values) 25 Tj=25°C (Maximum values) 20 10 15 10 5 VFM(V) VFM(V) 0 1 0.0 0.1 Figure 9. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Normalized avalanche power derating versus pulse duration PARM (t p ) PARM (1µs) 0.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Figure 10. Normalized avalanche power derating versus junction temperature 1.2 1 0.1 PARM (t p ) PARM (25°C) 1 0.1 0.8 0.6 0.01 0.4 0.2 0.01 4/7 Tj (°C) t p (µs) 0.001 0.1 1 10 100 1000 0 25 50 75 100 125 150 STPS200170TV1 2 2 Package mechanical data Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 4. ISOTOP dimensions DIMENSIONS REF. E G2 A C2 Inches Min. Max Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 C A1 Millimeters E2 F1 F P1 D G S D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B ØP G1 E1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 STPS200170TV1 3 Ordering information 3 4 6/7 Ordering information Part Number Marking Package Weight Base qty Delivery mode STPS200170TV1 STPS200170TV1 ISOTOP 27 g without screws 10 with screws Tube Revision history Date Revision 14-Nov-2005 1 Description of Changes First issue. STPS200170TV1 4 Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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