HA17904 Series Dual Operational Amplifier REJ03D0688-0100 (Previous: ADE-204-046) Rev.1.00 Jun 15, 2005 Description HA17904 is dual operational amplifier which, provide internal phase compensation and high gain, and mono power source operation is possible. It can be widely applied to control equipment and to general use. Features • Wide range of operating supply voltage and mono power source operation is possible. • Wide range of common mode input voltage possible to operate with an input around 0V, and output around 0V is available. • Frequency characteristics and input bias currrent are temperature compensated. Ordering Information Type No. HA17904PSJ HA17904FPJ HA17904FPK Rev.1.00 Jun 15, 2005 page 1 of 7 Application Car use Package Code (Previous Code) PRDP0008AF-A (DP-8B) PRSP0008DE-B (FP-8DGV) PRSP0008DE-B (FP-8DGV) HA17904 Series Pin Arrangement Vout1 1 Vin(–)1 2 Vin(+)1 3 GND 4 1 – + 2 + – 8 VCC 7 Vout2 6 Vin(–)2 5 Vin(+)2 (Top View) Circuit Schematic (1/2) Q5 Vin(–) Q1 Q2 Q3 Q4 Q6 C Q7 R1 Vin(+) Vout Q11 Q10 Q8 Rev.1.00 Jun 15, 2005 page 2 of 7 Q9 Q13 Q12 HA17904 Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings HA17904PSJ HA17904FPJ HA17904FPK Unit 32 50 32 50 32 50 V mA –0.3 to VCC ±VCC –0.3 to VCC ±VCC V V Supply voltage Output sink current VCC IO sink Common-mode input voltage Common-mode differential voltage VCM V IN(diff) –0.3 to VCC ±VCC Power dissipation Operating temperature range PT Topr 570* –40 to +85 1 2 2 385* –40 to +85 385* –40 to +125 mW °C Storage temperature range Tstg –55 to +125 –55 to +125 –55 to +150 Notes: 1. These are the allowable values up to Ta = 55 °C. Derate by 8.3mW/°C above that temperature. 2. These are the allowable values up to Ta = 45 °C mounting on 30% wiring density glass epoxy board. Derate by 7.14mW/°C above that temeperature. °C Electrical Characteristics 1 (VCC = +15V, Ta = 25°C) Item Input offset voltage Symbol VIO Min — Typ 3 Max 7 Unit mV Input offset current Input bias current Test Conditions VCM = 7.5V, RS = 50Ω, Rf = 50kΩ IIO IIB — — 5 30 50 250 nA nA VCM = 7.5V, IIO = | II (+) – II (–) | VCM = 7.5V Power source rejection ratio Voltage gain PSRR AVD — 75 93 90 — — dB dB RS = 1kΩ, Rf = 100kΩ RL = ∞, RS = 1kΩ, Rf = 100kΩ Common mode rejection ratio Common mode input voltage range CMR VCM (+) — 13.5 80 — — — dB V RS = 50Ω, Rf = 5kΩ RS = 1kΩ, Rf = 100kΩ Peak-to-peak output voltage VCM (–) Vop-p — — — 13.6 –0.3 — V V RS = 1kΩ, Rf = 100kΩ f = 100Hz, RL = 20kΩ, RS = 1kΩ, Rf = 100kΩ Output source current Output sink current Iosource Iosink 20 10 40 20 — — mA mA VIN = 1V, VIN = 0V, VOH = 10V – + VIN = 1V, VIN = 0V, VOL = 2.5V Output sink current Iosink 15 50 — µA + – – + Supply current ICC — 0.8 2 mA VIN = 1V, VIN = 0V, Vout = 200mV VIN = GND, RL = ∞ Slew rate Channel separation SR CS — — 0.2 120 — — V/µs dB RL = ∞, VCM = 7.5V, f = 1.5kHz f = 1kHz Electrical Characteristics 2 (VCC = +15V, Ta =–40 to +125°C) Item Input offset voltage Symbol VIO Min — Typ — Max 7 Unit mV Input offset current Input bias current Common mode input voltage range Supply current IIO IIB — — — — 200 500 nA nA VCM = 7.5V, IIO = | II (+) – II (–) | VCM = 7.5V VCM ICC 0 — — — 13.0 4 V mA RS = 1kΩ, Rf = 100kΩ VIN = GND, RL = ∞ Note: As for the characteristic curve, refer to HA17904FPK. Rev.1.00 Jun 15, 2005 page 3 of 7 Test Conditions VCM = 7.5V, RS = 50Ω, RL = 50kΩ HA17904 Series Characteristic Curves Input Bias Current vs. Ambient Temperature Characteristics Input Bias Current vs. Power-Supply Voltage Characteristics 90 Ta = 25°C Vin = 7.5 V 80 Input Bias Current IIB (nA) Input Bias Current IIB (nA) 100 75 50 25 70 60 50 40 30 20 10 0 10 20 0 –55 –35 –15 30 Power-Supply Voltage VCC (V) Output Sink Current vs. Ambient Temperature Characteristics 25 45 65 85 105 125 Output Source Current vs. Ambient Temperature Characteristics 90 VCC = 15 V VOH = 1 V 80 70 60 50 40 30 20 10 0 –55 –35 –15 5 25 45 65 85 105 125 Ambient Temperature Ta (°C) Rev.1.00 Jun 15, 2005 page 4 of 7 Output Sink Current Io source (mA) 90 Output Sink Current Io sink (mA) 5 Ambient Temperature Ta (°C) VCC = 15 V VOH = 10 V 80 70 60 50 40 30 20 10 0 –55 –35 –15 5 25 45 65 85 105 125 Ambient Temperature Ta (°C) HA17904 Series Voltage Gain vs. Frequency Characteristics Voltage Gain vs. Power-Supply Voltage Characteristics 160 160 VCC = 15 V Ta = 25°C 140 Voltage Gain AVD (dB) Voltage Gain AVD (dB) 140 120 100 80 60 40 20 0 120 100 80 60 40 20 1 10 100 1k 10 k 100 k 0 1M Frequency f (Hz) 10 20 30 Power-Supply Voltage VCC (V) Supply Current vs. Power-Supply Voltage Characteristics Maximum Output Voltage Amplitude vs. Frequency Characteristics 4 20 Ta = 25°C Vin = GND Supply Current ICC (mA) Maximum Output Voltage Amplitude VOP-P (VP-P) Ta = 25°C 15 10 5 0 1k 3 2 1 0 10 k 100 k Frequency f (Hz) Rev.1.00 Jun 15, 2005 page 5 of 7 1M 10 20 Power-Supply Voltage VCC (V) 30 HA17904 Series Common-Mode Rejection Ratio vs. Frequency Characteristics Slew Rate vs. Power-Supply Voltage Characteristics 0.8 Slew Rate SR (V/µs) 0.6 0.4 0.2 0 10 20 Power-Supply Voltage VCC (V) Rev.1.00 Jun 15, 2005 page 6 of 7 30 Common-Mode Rejection Ratio CMR (dB) 120 V1 = V2 = 1/2 VCC f = 1.5 kHz VCC = 15 V Ta = 25°C RS = 50 Ω 100 80 60 40 20 0 100 1k 10 k Frequency f (Hz) 100 k 1M HA17904 Series Package Dimensions JEITA Package Code P-DIP8-6.3x9.6-2.54 RENESAS Code PRDP0008AF-A Previous Code DP-8B MASS[Typ.] 0.51g D 5 E 8 1 4 b3 0.89 Z Reference Symbol Dimension in Millimeters Min Nom 7.62 D 9.6 E 6.3 Max A1 A e1 L A1 0.5 bp 0.38 θ c e1 0.48 c 0.20 θ 0° e 2.29 0.25 0.35 2.54 2.79 15° 1.27 Z 2.54 L JEITA Package Code P-SOP8-4.4x4.85-1.27 RENESAS Code PRSP0008DE-B *1 Previous Code FP-8DGV MASS[Typ.] 0.1g F D 8 0.58 1.3 b3 bp 7.4 5.06 A e 10.6 NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 5 c *2 E HE bp Reference Symbol Terminal cross section ( Ni/Pd/Au plating ) Z e Min Nom Max 4.85 5.25 E 4.4 A2 4 1 Dimension in Millimeters D Index mark *3 bp A1 x M 0.00 0.1 0.35 0.4 0.45 0.15 0.20 0.25 6.5 6.75 A 2.03 bp L1 0.20 b1 c A c1 A1 θ L y Detail F θ 0° HE 6.35 e 1.27 x 0.12 y 0.15 0.75 Z L L Rev.1.00 Jun 15, 2005 page 7 of 7 8° 0.42 1 0.60 1.05 0.85 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0