HD74ALVC2G245 Dual Bus Transceivers with 3-state Output REJ03D0176–0400Z (Previous ADE-205-641C (Z)) Rev.4.00 Dec.18.2003 Description The HD74ALVC2G245 has two buffers with three state output in an 8 pin package. When DIR is high, data is transferred from the A inputs to the B outputs, and when DIR is low, data is transferred from the B inputs to the A outputs. The A and B buses are separated by making the enable input (OE) high level. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption extends the battery life. Features • The basic gate function is lined up as Renesas uni logic series. • Supplied on emboss taping for high-speed automatic mounting. • Supply voltage range : 1.2 to 3.6 V Operating temperature range: −40 to +85°C • All inputs VIH (Max.) = 3.6 V (@VCC = 0 V to 3.6 V) All outputs VO (Max.) = 3.6 V (@VCC = 0 V) • Output current ±2 mA (@VCC = 1.2 V) ±4 mA (@VCC = 1.4 V to 1.6 V) ±6 mA (@VCC = 1.65 V to 1.95 V) ±18 mA (@VCC = 2.3 V to 2.7 V) ±24 mA (@VCC = 3.0 V to 3.6 V) • Ordering Information Part Name Package Type Package Code Package Abbreviation Taping Abbreviation (Quantity) HD74ALVC2G245USE SSOP-8 pin TTP-8DBV US E (3,000 pcs/reel) Rev.4.00, Dec.18.2003, page 1 of 10 HD74ALVC2G245 Outline and Article Indication • HD74ALVC2G245 Index band Lot No. Y M W A 4 5 Y : Year code (the last digit of year) M : Month code W : Week code SSOP-8 Marking Function Table Inputs OE DIR Operation L L B data to A bus L H A data to B bus H X Isolation H: L: X: High level Low level Immaterial Rev.4.00, Dec.18.2003, page 2 of 10 HD74ALVC2G245 Pin Arrangement DIR 1 8 VCC A1 2 7 OE A2 3 6 B1 GND 4 5 B2 (Top view) Absolute Maximum Ratings Item Symbol Ratings Unit Supply voltage range VCC −0.5 to 4.6 V Input voltage range *1 VI −0.5 to 4.6 V VO −0.5 to VCC+0.5 V Output voltage range *1, 2 −0.5 to 4.6 Conditions Output : H or L or Z VCC : OFF Input clamp current IIK −50 mA VI < 0 Output clamp current IOK ±50 mA VO < 0 or VO > VCC Continuous output current IO ±50 mA VO = 0 to VCC Continuous current through VCC or GND ICC or IGND ±100 mA Maximum power dissipation *3 at Ta = 25°C (in still air) PT 200 mW Storage temperature Tstg −65 to 150 °C Notes: The absolute maximum ratings are values, which must not individually be exceeded, and furthermore, no two of which may be realized at the same time. 1. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 2. This value is limited to 4.6 V maximum. 3. The maximum package power dissipation was calculated using a junction temperature of 150°C. Rev.4.00, Dec.18.2003, page 3 of 10 HD74ALVC2G245 Recommended Operating Conditions Item Symbol Min Max Unit Supply voltage range VCC 1.2 3.6 V Input voltage range VI 0 3.6 V Output voltage range VO 0 VCC V Output current IOH −2 mA −4 VCC = 1.4 V −6 VCC = 1.65 V −18 VCC = 2.3 V −24 VCC = 3.0 V 2 VCC = 1.2 V 4 VCC = 1.4 V 6 VCC = 1.65 V 18 VCC = 2.3 V IOL Input transition rise or fall rate Operating free-air temperature ∆t / ∆v Ta 24 0 20 0 10 −40 85 Note: Unused or floating inputs must be held high or low. Rev.4.00, Dec.18.2003, page 4 of 10 Conditions VCC = 1.2 V VCC = 3.0 V ns / V VCC = 1.2 to 2.7 V VCC = 3.3±0.3 V °C HD74ALVC2G245 Electrical Characteristics (Ta = −40 to 85°C) Item Symbol VCC (V) * Min Input voltage VIH 1.2 VIL Output voltage VOH VOL Typ Max Unit VCC×0.75 V 1.4 to 1.6 VCC×0.7 1.65 to 1.95 VCC×0.7 2.3 to 2.7 1.7 3.0 to 3.6 2.0 1.2 VCC×0.25 1.4 to 1.6 VCC×0.3 1.65 to 1.95 VCC×0.3 2.3 to 2.7 0.7 3.0 to 3.6 0.8 Min to Max VCC−0.2 1.2 0.9 IOH = −2 mA 1.4 1.1 IOH = −4 mA 1.65 1.2 IOH = −6 mA 2.3 1.7 IOH = −18 mA 3.0 2.2 IOH = −24 mA Min to Max 0.2 IOL = 100 µA 1.2 0.3 IOL = 2 mA 1.4 0.3 IOL = 4 mA 1.65 0.3 IOL = 6 mA 2.3 0.55 IOL = 18 mA 3.0 0.55 IOL = 24 mA V Test conditions IOH = −100 µA Input current IIN 3.6 ±5 µA VIN = 3.6 V or GND Off state output current IOZ 3.6 ±5 µA VO = VCC or GND Quiescent supply current ICC 3.6 10 µA VIN = VCC or GND, IO = 0 Output leakage current IOFF 0 5 µA VIN or VO = 0 to 3.6 V Input capacitance CIN 3.3 4.5 pF VIN = VCC or GND Output capacitance CO 3.3 6.5 pF VO = VCC or GND Note: For conditions shown as Min or Max, use the appropriate values under recommended operating conditions. Rev.4.00, Dec.18.2003, page 5 of 10 HD74ALVC2G245 Switching Characteristics (Ta = −40 to 85°C) VCC = 1.2 V Item Symbol Min Typ Max Unit Test conditions FROM (Input) TO (Output) Propagation delay time tPLH tPHL 7.0 ns CL = 15 pF A or B B or A Enable time tZH tZL 8.5 ns CL = 15 pF OE A or B Disable time tHZ tLZ 7.0 ns CL = 15 pF OE A or B Item Symbol Min Typ Max Unit Test conditions FROM (Input) TO (Output) Propagation delay time tPLH tPHL 2.0 8.0 ns CL = 15 pF A or B B or A Enable time tZH tZL 2.0 11.0 ns CL = 15 pF OE A or B Disable time tHZ tLZ 2.0 10.0 ns CL = 15 pF OE A or B Item Symbol Min Typ Max Unit Test conditions FROM (Input) TO (Output) Propagation delay time tPLH tPHL 1.5 6.0 ns CL = 30 pF A or B B or A Enable time tZH tZL 1.5 8.0 ns CL = 30 pF OE A or B Disable time tHZ tLZ 1.5 7.5 ns CL = 30 pF OE A or B VCC = 1.5±0.1 V VCC = 1.8±0.15 V Rev.4.00, Dec.18.2003, page 6 of 10 HD74ALVC2G245 Switching Characteristics (cont) VCC = 2.5±0.2 V Item Symbol Min Typ Max Unit Test conditions FROM (Input) TO (Output) Propagation delay time tPLH tPHL 1.0 4.0 ns CL = 30 pF A or B B or A Enable time tZH tZL 1.0 5.0 ns CL = 30 pF OE A or B Disable time tHZ tLZ 1.0 4.5 ns CL = 30 pF OE A or B Item Symbol Min Typ Max Unit Test conditions FROM (Input) TO (Output) Propagation delay time tPLH tPHL 1.0 3.0 ns CL = 30 pF A or B B or A Enable time tZH tZL 1.0 4.0 ns CL = 30 pF OE A or B Disable time tHZ tLZ 1.0 4.0 ns CL = 30 pF OE A or B VCC = 3.3±0.3 V Operating Characteristics (Ta = 25°C) Item Symbol VCC (V) Min Typ Max Unit Test conditions Power dissipation capacitance CPD 1.5 13.0 pF f = 10 MHz 1.8 13.0 2.5 14.0 3.3 17.0 Rev.4.00, Dec.18.2003, page 7 of 10 HD74ALVC2G245 Test Circuit VCC Pulse Generator Z OUT = 50 Ω See Function Table Input VCC OE Output A1 S1 RL S2 B1 CL RL DIR S2 V CC = 1.2 V, 1.5±0.1 V, V = 3.3±0.3 V CC 1.8±0.15 V, 2.5±0.2 V Symbol t PLH / t PHL OPEN OPEN t HZ / t ZH GND GND t LZ / t ZL VCC×2 6.0 Symbol V CC = 1.2 V, V = 2.5±0.2 V, V = 1.8±0.15 V CC 1.5±0.1 V CC 3.3±0.3 V RL 2.0 kΩ 1.0 kΩ 500 Ω CL 15 pF 30 pF 30 pF Notes: 1. C L includes probe and jig capacitance. 2. A2–B2 are idential to above load circuit. 3. S1 : Input–Output change switch. Rev.4.00, Dec.18.2003, page 8 of 10 OPEN See under table *1 GND HD74ALVC2G245 • Waveforms – 1 tr tf Vref Input VIH 90 % Vref 90 % 10 % 10 % t PLH GND t PHL VOH In phase output Vref Vref VOL • Waveforms – 2 Input OE tr tf VIH 90 % 90 % Vref Vref 10 % t ZL 10 % GND t LZ VOH Vref Waveform – A VL t ZH Waveform – B VOL t HZ VOH VH Vref VOL Symbol V CC = 1.2 V, 1.5±0.1 V V CC = 1.8±0.15 V V CC = 2.5±0.2 V V CC = 3.3±0.3 V tr / t f 2.0 ns 2.0 ns 2.5 ns 2.5 ns V IH VCC VCC VCC 2.7 V 50% 50% 1.5 V V ref VH / V L 50% VH = VOH-0.1 V VL = VOL+0.1 V VH = VOH-0.15 V VH = VOH-0.15 V VH = VOH-0.3 V VL = VOL+0.15 V VL = VOL+0.15 V VL = VOL+0.3 V Notes: 1. Input waveform : PRR ≤ 10 MHz, Zo = 50 Ω, duty cycle 50%. 2. Waveform – A is for an output with internal conditions such that the output is low except when disabled by the output control. 3. Waveform – B is for an output with internal conditions such that the output is high except when disabled by the output control. 4. The output are measured one at a time with one transition per measurement. Rev.4.00, Dec.18.2003, page 9 of 10 HD74ALVC2G245 Package Dimensions 2.0 ± 0.2 1.5 ± 0.2 + 0.1 (0.17) 8 − 0.2 − 0.05 Package Code JEDEC JEITA Mass (reference value) Rev.4.00, Dec.18.2003, page 10 of 10 + 0.1 0.13 − 0.05 0 − 0.1 0.7 ± 0.1 (0.4) 2.3 ± 0.1 (0.5) (0.5) (0.5) 3.1 ± 0.3 (0.4) Unit: mm TTP–8DBV 0.010 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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