HSB88WS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0589-0400 (Previous: ADE-208-026C) Rev.4.00 Apr 05, 2005 Features • • • • Small ∆VF and ∆C. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation. Ordering Information Type No. HSB88WS Laser Mark Package Name MOP Pin Arrangement 4 3 2 1 5 6 7 8 (Top view) Rev.4.00 Apr 05, 2005 page 1 of 4 Package Code (Previous Code) PTSP0008DB-A (MOP) HSB88WS Absolute Maximum Ratings (Ta = 25°C) Item Symbol Reverse voltage Average rectified current Power dissipation Junction temperature Operation temperature Storage temperature Note: 1. 4 devices total Value 10 15 150 125 −40 to +85 −55 to +125 VR IO *1 Pd *1 Tj Topr Tstg Unit V mA mW °C °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Min 0.365 0.520 Typ — — Max 0.435 0.600 Unit V Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capabilityme *2 IR1 IR2 — — — — 0.2 10 µA VR = 2 V VR = 10 V C ∆C *1 ∆VF *1 — — — — 30 — — — — 0.85 0.2 15 — pF pF mV V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA Notes: 1. Deviation between 4 devices in one package. 2. Failure criterion ; IR > 0.4 µA at VR = 2 V Rev.4.00 Apr 05, 2005 page 2 of 4 Test Condition IF = 1 mA IF = 10 mA C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. HSB88WS Main Characteristic 10-2 10-5 10-5 Reverse current I R (A) (A) 10-4 Forward current IF 10-3 10-6 10-7 10-8 10-6 10-7 10-8 10-9 10-10 0 0.2 10-9 0.4 0.6 2 4 6 8 10 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz (pF) 10 Capacitance C 0 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.4.00 Apr 05, 2005 page 3 of 4 HSB88WS Package Dimensions JEITA Package Code RENESAS Code Previous Code MASS[Typ.] PTSP0008DB-A MOP / MOPV 0.020g D e E HE L (0.45) b A2 A A1 b2 Reference e Symbol l1 e1 l1 Pattern of terminal position areas Rev.4.00 Apr 05, 2005 page 4 of 4 A A1 A2 b D E e HE L b2 e1 l1 Dimension in Millimeters Min 1.0 0 2.2 - Nom 1.1 0.4 4.71 1.5 1.27 2.8 0.65 0.8 2.6 1.0 Max 1.3 0.1 3.0 - Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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