ELM97series

ELM97xxxxB CMOS Voltage detector
■General description
ELM97xxxxB is CMOS voltage detector IC which consists of very-low-power-consumption reference voltage
source, comparator, output driver, hysteresis circuit and detection voltage setting resistor. Because of positive
logic output, the output becomes low level when Vdd is lower than detection voltage. There are 2 types of
output style of ELM97 series: N-ch opendrain and CMOS output. ELM97 series can be made as semi-custom
IC within the range of 0.9V to 5.5V(N-ch) and 1.6V to 5.5V(CMOS) by 0.1V step.
■Features
• Detection voltage range
•
•
•
•
Low voltage operation
Low current consumption
Accuracy of detection voltage
Temperature coefficient
• Package
■Application
: N-ch 0.9V to 5.5V (by 0.1V)
CMOS 1.6V to 5.5V (by 0.1V)
: Reset operation assured at 0.8V
: Typ.1μA(Vdd=1.5V)
: ±2.5%
: Typ.-300ppm/°C(Vdetn<2V)
Typ.-100ppm/°C(Vdetn≥2V)
: SOT-89, SOT-23
•
•
•
•
Reset for microcomputers
Power voltage shortage detectors
Switch of backup power source
Battery checkers
■Maximum absolute ratings
Parameter
Power supply voltage
Symbol
Vdd
Output voltage
Vout
Output current
Iout
Power dissipation
Pd
Operationg temperature
Storage temperature
Limit
10
N-ch : Vss-0.3 to +10
CMOS : Vss-0.3 to Vdd+0.3
50
500 (SOT-89)
250 (SOT-23)
-40 to +85
-55 to +125
Top
Tstg
Unit
V
V
mA
mW
°C
°C
■Selection guide
ELM97xxxxB-x
Symbol
a, b
c
d
e
f
e.g. :
09: Vdetn=0.9V(N-ch) 24: Vdetn=2.4V(CMOS)
Detection voltage
10: Vdetn=1.0V(N-ch) 30: Vdetn=3.0V(CMOS)
11: Vdetn=1.1V(N-ch) 45: Vdetn=4.5V(CMOS)
N: N-ch(N-ch opendrain)
Output form
C: CMOS
A: SOT-89
Package
B: SOT-23
Product version B
S: Refer to PKG file
Taping direction
N: Refer to PKG file
9-1
ELM97 x x x x B - x
↑ ↑ ↑ ↑ ↑ ↑
a b c d e f
ELM97xxxxB CMOS Voltage detector
■Pin configuration
SOT-89(TOP VIEW)
SOT-23(TOP VIEW)
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Pin No.
1
2
3
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Pin name
OUT
VDD
VSS
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Pin No.
1
2
3
Pin name
OUT
VSS
VDD
■Block diagram
N-ch Output
CMOS Output
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■Timing chart
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9- 2
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ELM97xxxxB CMOS Voltage detector
■Electrical characteristics (N-ch)
Vdetn=0.9V(ELM9709NxB)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Vhys
Iss
Vdd=1.5V
Vdd
Ioutn Vdd=0.8V, Vds=0.5V
Tphl
ΔVdetn
Top=-40°C to +85°C
ΔTop
Vdetn=1.0V(ELM9710NxB)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Condition
Vhys
Iss
Vdd=1.5V
Vdd
Ioutn Vdd=0.8V, Vds=0.5V
Tphl
ΔVdetn
Top=-40°C to +85°C
ΔTop
Vdetn=1.1V(ELM9711NxB)
Parameter
Detection voltage
Condition
Symbol
Vdetn
Condition
Vhys
Iss
Vdd=1.5V
Vdd
Ioutn Vdd=0.8V, Vds=0.5V
Tphl
ΔVdetn
Top=-40°C to +85°C
ΔTop
9- 3
Min.
0.878
Vdetn
×0.02
0.8
0.002
Typ.
0.900
1.0
0.100
2
Max.
0.922
Vdetn
×0.08
3.0
6.0
-0.27
Min.
0.975
Vdetn
×0.02
0.8
0.002
Typ.
1.000
1.0
0.100
2
-0.33
V
2
μA
V
mA
ms
1
2
3-(1)
4
mV/°C
Max.
1.025
Vdetn
×0.08
3.0
6.0
-0.30
Min.
Typ.
1.073 1.100
Vdetn×
0.02
1.0
0.8
0.002 0.100
2
Top=25°C
Unit Note
V
2
Top=25°C
Unit Note
V
2
V
2
μA
V
mA
ms
1
2
3-(1)
4
mV/°C
Max.
1.127
Vdetn
×0.08
3.0
6.0
Top=25°C
Unit Note
V
2
V
2
μA
V
mA
ms
1
2
3-(1)
4
mV/°C
ELM97xxxxB CMOS Voltage detector
■Electrical characteristics (CMOS)
Vdetn=2.2V(ELM9722CxB)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=3.0V
Vdd=1.5V, Vds=0.5V
Vdd=4.5V, Vds=2.1V
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=3.0V
Vdd=1.5V, Vds=0.5V
Vdd=4.5V, Vds=2.1V
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=3.0V
Vdd=1.5V, Vds=0.5V
Vdd=4.5V, Vds=2.1V
Top=-40°C to +85°C
9- 4
Typ.
2.200
1.5
2.0
1.5
0.1
Max.
2.255
Vdetn
×0.08
4.5
6.0
Min.
2.340
Vdetn
×0.02
0.8
1.0
0.5
Typ.
2.400
1.5
2.0
1.5
0.1
0.8
1.0
0.5
Typ.
2.500
1.5
2.0
1.5
0.1
-0.25
V
2
μA
V
1
2
3-(1)
3-(2)
4
ms
mV/°C
Max.
2.460
Vdetn
×0.08
4.5
6.0
Top=25°C
Unit Note
V
2
V
2
μA
V
1
2
3-(1)
3-(2)
4
mA
ms
-0.24
Min.
2.438
Vdetn
×0.02
Top=25°C
Unit Note
V
2
mA
-0.22
Top=-40°C to +85°C
Vdetn=2.5V(ELM9725CxB)
Parameter
Detection voltage
0.8
1.0
0.5
Top=-40°C to +85°C
Vdetn=2.4V(ELM9724CxB)
Parameter
Detection voltage
Min.
2.145
Vdetn
×0.02
mV/°C
Max.
2.562
Vdetn
×0.08
4.5
6.0
Top=25°C
Unit Note
V
2
V
2
μA
V
1
2
3-(1)
3-(2)
4
mA
ms
mV/°C
ELM97xxxxB CMOS Voltage detector
Vdetn=2.7V(ELM9727CxB)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=4.5V
Vdd=1.5V, Vds=0.5V
Vdd=4.5V, Vds=2.1V
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=4.5V
Vdd=1.5V, Vds=0.5V
Vdd=4.5V, Vds=2.1V
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=4.5V
Vdd=1.5V, Vds=0.5V
Vdd=4.5V, Vds=2.1V
Top=-40°C to +85°C
9- 5
Typ.
2.700
1.5
2.0
1.5
0.1
Max.
2.767
Vdetn
×0.08
4.5
6.0
Min.
2.925
Vdetn
×0.02
0.8
1.0
0.5
Typ.
3.000
1.5
2.0
1.5
0.1
0.8
1.0
0.5
Typ.
3.200
1.5
2.0
1.5
0.1
-0.32
V
2
μA
V
1
2
3-(1)
3-(2)
4
ms
mV/°C
Max.
3.075
Vdetn
×0.08
4.5
6.0
Top=25°C
Unit Note
V
2
V
2
μA
V
1
2
3-(1)
3-(2)
4
mA
ms
-0.30
Min.
3.120
Vdetn
×0.02
Top=25°C
Unit Note
V
2
mA
-0.27
Top=-40°C to +85°C
Vdetn=3.2V(ELM9732CxB)
Parameter
Detection voltage
0.8
1.0
0.5
Top=-40°C to +85°C
Vdetn=3.0V(ELM9730CxB)
Parameter
Detection voltage
Min.
2.633
Vdetn
×0.02
mV/°C
Max.
3.280
Vdetn
×0.08
4.5
6.0
Top=25°C
Unit Note
V
2
V
2
μA
V
1
2
3-(1)
3-(2)
4
mA
ms
mV/°C
ELM97xxxxB CMOS Voltage detector
Vdetn=3.4V(ELM9734CxB)
Parameter
Detection voltage
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=4.5V
Vdd=1.5V, Vds=0.5V
Vdd=4.5V, Vds=2.1V
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=6.0V
Vdd=1.5V, Vds=0.5V
Vdd=6.0V, Vds=2.1V
Hysteresis width
Current consumption
Power voltage
Output current
Delay time
Temperature
characteristic of Vdetn
Note: Test circuit No.
Symbol
Vdetn
Condition
Vhys
Iss
Vdd
Ioutn
Ioutp
Tphl
ΔVdetn
ΔTop
Vdd=6.0V
Vdd=1.5V, Vds=0.5V
Vdd=6.0V, Vds=2.1V
Top=-40°C to +85°C
9- 6
Typ.
3.400
1.5
2.0
1.5
0.1
Max.
3.485
Vdetn
×0.08
4.5
6.0
Min.
4.388
Vdetn
×0.02
0.8
1.0
0.5
Typ.
4.500
1.5
2.0
2.0
0.1
0.8
1.0
0.5
Typ.
4.800
1.5
2.0
2.0
0.1
-0.48
2
μA
V
1
2
3-(1)
3-(2)
4
ms
mV/°C
Max.
4.612
Vdetn
×0.08
4.5
6.0
Top=25°C
Unit Note
V
2
V
2
μA
V
1
2
3-(1)
3-(2)
4
mA
ms
-0.45
Min.
4.680
Vdetn
×0.02
V
mA
-0.34
Top=-40°C to +85°C
Vdetn=4.8V(ELM9748CxB)
Parameter
Detection voltage
0.8
1.0
0.5
Top=-40°C to +85°C
Vdetn=4.5V(ELM9745CxB)
Parameter
Detection voltage
Min.
3.315
Vdetn
×0.02
Top=25°C
Unit Note
V
2
mV/°C
Max.
4.920
Vdetn
×0.08
4.5
6.0
Top=25°C
Unit Note
V
2
V
2
μA
V
1
2
3-(1)
3-(2)
4
mA
ms
mV/°C
ELM97xxxxB CMOS Voltage detector
■Test circuits
1) Current consumption
2) Detection voltage
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* R=1MΩ
3)-(1) Output current (N-ch)
3)-(2) Output current (P-ch)
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4) Delay time
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** Input pulse
* R=1MΩ
R is unnecessary for CMOS output products.
9- 7
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ELM97xxxxB CMOS Voltage detector
■Marking
• Rule 1
SOT-89
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SOT-23
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a : the integer digit of the detection voltage
Mark
Vdetn
Mark
A
0.*V (N-ch)
P
B
1.*V (N-ch)
R
C
2.*V (N-ch)
S
D
3.*V (N-ch)
T
E
4.*V (N-ch)
U
F
5.*V (N-ch)
Vdetn
2.*V (CMOS)
3.*V (CMOS)
4.*V (CMOS)
5.*V (CMOS)
1.*V (CMOS)
b : the decimal digit of the detection voltage
Mark
Vdetn
Mark
0
.0V
5
*
1
6
*.1V
2
7
*.2V
3
.3V
8
*
4
9
*.4V
Vdetn
*.5V
*.6V
*.7V
*.8V
*.9V
c : Assembly lot No.
A to Z (I, O, X excepted)
d : Assembly lot No.
0 to 9
• Rule 2
a : A (ELM97 series mark)
b : the integer digit of the detection voltage
Mark
Vdetn
Mark
0
0.*V (N-ch)
Y
1
1.*V (N-ch)
W
2
2.*V (N-ch)
U
3
3.*V (N-ch)
V
4
4.*V (N-ch)
Z
5
5.*V (N-ch)
c : the decimal digit of the detection voltage
Mark
Vdetn
Mark
0
5
*.0V
1
6
*.1V
2
.2V
7
*
3
8
*.3V
4
.4V
9
*
d : Assembly lot No.
Vdetn
2.*V (CMOS)
3.*V (CMOS)
4.*V (CMOS)
5.*V (CMOS)
1.*V (CMOS)
Vdetn
*.5V
*.6V
*.7V
*.8V
*.9V
0 to 9 and A to Z (I, O, X excepted)
Remarks : ELM97 series have two kinds of marking rules each package.
9- 8
ELM97xxxxB CMOS Voltage detector
■Typical characteristics
• Vdetn=1.1V, N-ch(ELM9711NxB)
Vout - Vdd
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Vout (V)
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Vdd (V)
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