ELM97xxxxB CMOS Voltage detector ■General description ELM97xxxxB is CMOS voltage detector IC which consists of very-low-power-consumption reference voltage source, comparator, output driver, hysteresis circuit and detection voltage setting resistor. Because of positive logic output, the output becomes low level when Vdd is lower than detection voltage. There are 2 types of output style of ELM97 series: N-ch opendrain and CMOS output. ELM97 series can be made as semi-custom IC within the range of 0.9V to 5.5V(N-ch) and 1.6V to 5.5V(CMOS) by 0.1V step. ■Features • Detection voltage range • • • • Low voltage operation Low current consumption Accuracy of detection voltage Temperature coefficient • Package ■Application : N-ch 0.9V to 5.5V (by 0.1V) CMOS 1.6V to 5.5V (by 0.1V) : Reset operation assured at 0.8V : Typ.1μA(Vdd=1.5V) : ±2.5% : Typ.-300ppm/°C(Vdetn<2V) Typ.-100ppm/°C(Vdetn≥2V) : SOT-89, SOT-23 • • • • Reset for microcomputers Power voltage shortage detectors Switch of backup power source Battery checkers ■Maximum absolute ratings Parameter Power supply voltage Symbol Vdd Output voltage Vout Output current Iout Power dissipation Pd Operationg temperature Storage temperature Limit 10 N-ch : Vss-0.3 to +10 CMOS : Vss-0.3 to Vdd+0.3 50 500 (SOT-89) 250 (SOT-23) -40 to +85 -55 to +125 Top Tstg Unit V V mA mW °C °C ■Selection guide ELM97xxxxB-x Symbol a, b c d e f e.g. : 09: Vdetn=0.9V(N-ch) 24: Vdetn=2.4V(CMOS) Detection voltage 10: Vdetn=1.0V(N-ch) 30: Vdetn=3.0V(CMOS) 11: Vdetn=1.1V(N-ch) 45: Vdetn=4.5V(CMOS) N: N-ch(N-ch opendrain) Output form C: CMOS A: SOT-89 Package B: SOT-23 Product version B S: Refer to PKG file Taping direction N: Refer to PKG file 9-1 ELM97 x x x x B - x ↑ ↑ ↑ ↑ ↑ ↑ a b c d e f ELM97xxxxB CMOS Voltage detector ■Pin configuration SOT-89(TOP VIEW) SOT-23(TOP VIEW) � � Pin No. 1 2 3 � � � Pin name OUT VDD VSS � Pin No. 1 2 3 Pin name OUT VSS VDD ■Block diagram N-ch Output CMOS Output ��� ��� ��� ���� ���� � � ��� ��� ■Timing chart ��� ����� ����� ���� ������ ��� ���� ��� ���� ���� 9- 2 � � ��� ELM97xxxxB CMOS Voltage detector ■Electrical characteristics (N-ch) Vdetn=0.9V(ELM9709NxB) Parameter Detection voltage Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Vhys Iss Vdd=1.5V Vdd Ioutn Vdd=0.8V, Vds=0.5V Tphl ΔVdetn Top=-40°C to +85°C ΔTop Vdetn=1.0V(ELM9710NxB) Parameter Detection voltage Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Condition Vhys Iss Vdd=1.5V Vdd Ioutn Vdd=0.8V, Vds=0.5V Tphl ΔVdetn Top=-40°C to +85°C ΔTop Vdetn=1.1V(ELM9711NxB) Parameter Detection voltage Condition Symbol Vdetn Condition Vhys Iss Vdd=1.5V Vdd Ioutn Vdd=0.8V, Vds=0.5V Tphl ΔVdetn Top=-40°C to +85°C ΔTop 9- 3 Min. 0.878 Vdetn ×0.02 0.8 0.002 Typ. 0.900 1.0 0.100 2 Max. 0.922 Vdetn ×0.08 3.0 6.0 -0.27 Min. 0.975 Vdetn ×0.02 0.8 0.002 Typ. 1.000 1.0 0.100 2 -0.33 V 2 μA V mA ms 1 2 3-(1) 4 mV/°C Max. 1.025 Vdetn ×0.08 3.0 6.0 -0.30 Min. Typ. 1.073 1.100 Vdetn× 0.02 1.0 0.8 0.002 0.100 2 Top=25°C Unit Note V 2 Top=25°C Unit Note V 2 V 2 μA V mA ms 1 2 3-(1) 4 mV/°C Max. 1.127 Vdetn ×0.08 3.0 6.0 Top=25°C Unit Note V 2 V 2 μA V mA ms 1 2 3-(1) 4 mV/°C ELM97xxxxB CMOS Voltage detector ■Electrical characteristics (CMOS) Vdetn=2.2V(ELM9722CxB) Parameter Detection voltage Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=3.0V Vdd=1.5V, Vds=0.5V Vdd=4.5V, Vds=2.1V Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=3.0V Vdd=1.5V, Vds=0.5V Vdd=4.5V, Vds=2.1V Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=3.0V Vdd=1.5V, Vds=0.5V Vdd=4.5V, Vds=2.1V Top=-40°C to +85°C 9- 4 Typ. 2.200 1.5 2.0 1.5 0.1 Max. 2.255 Vdetn ×0.08 4.5 6.0 Min. 2.340 Vdetn ×0.02 0.8 1.0 0.5 Typ. 2.400 1.5 2.0 1.5 0.1 0.8 1.0 0.5 Typ. 2.500 1.5 2.0 1.5 0.1 -0.25 V 2 μA V 1 2 3-(1) 3-(2) 4 ms mV/°C Max. 2.460 Vdetn ×0.08 4.5 6.0 Top=25°C Unit Note V 2 V 2 μA V 1 2 3-(1) 3-(2) 4 mA ms -0.24 Min. 2.438 Vdetn ×0.02 Top=25°C Unit Note V 2 mA -0.22 Top=-40°C to +85°C Vdetn=2.5V(ELM9725CxB) Parameter Detection voltage 0.8 1.0 0.5 Top=-40°C to +85°C Vdetn=2.4V(ELM9724CxB) Parameter Detection voltage Min. 2.145 Vdetn ×0.02 mV/°C Max. 2.562 Vdetn ×0.08 4.5 6.0 Top=25°C Unit Note V 2 V 2 μA V 1 2 3-(1) 3-(2) 4 mA ms mV/°C ELM97xxxxB CMOS Voltage detector Vdetn=2.7V(ELM9727CxB) Parameter Detection voltage Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=4.5V Vdd=1.5V, Vds=0.5V Vdd=4.5V, Vds=2.1V Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=4.5V Vdd=1.5V, Vds=0.5V Vdd=4.5V, Vds=2.1V Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=4.5V Vdd=1.5V, Vds=0.5V Vdd=4.5V, Vds=2.1V Top=-40°C to +85°C 9- 5 Typ. 2.700 1.5 2.0 1.5 0.1 Max. 2.767 Vdetn ×0.08 4.5 6.0 Min. 2.925 Vdetn ×0.02 0.8 1.0 0.5 Typ. 3.000 1.5 2.0 1.5 0.1 0.8 1.0 0.5 Typ. 3.200 1.5 2.0 1.5 0.1 -0.32 V 2 μA V 1 2 3-(1) 3-(2) 4 ms mV/°C Max. 3.075 Vdetn ×0.08 4.5 6.0 Top=25°C Unit Note V 2 V 2 μA V 1 2 3-(1) 3-(2) 4 mA ms -0.30 Min. 3.120 Vdetn ×0.02 Top=25°C Unit Note V 2 mA -0.27 Top=-40°C to +85°C Vdetn=3.2V(ELM9732CxB) Parameter Detection voltage 0.8 1.0 0.5 Top=-40°C to +85°C Vdetn=3.0V(ELM9730CxB) Parameter Detection voltage Min. 2.633 Vdetn ×0.02 mV/°C Max. 3.280 Vdetn ×0.08 4.5 6.0 Top=25°C Unit Note V 2 V 2 μA V 1 2 3-(1) 3-(2) 4 mA ms mV/°C ELM97xxxxB CMOS Voltage detector Vdetn=3.4V(ELM9734CxB) Parameter Detection voltage Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=4.5V Vdd=1.5V, Vds=0.5V Vdd=4.5V, Vds=2.1V Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=6.0V Vdd=1.5V, Vds=0.5V Vdd=6.0V, Vds=2.1V Hysteresis width Current consumption Power voltage Output current Delay time Temperature characteristic of Vdetn Note: Test circuit No. Symbol Vdetn Condition Vhys Iss Vdd Ioutn Ioutp Tphl ΔVdetn ΔTop Vdd=6.0V Vdd=1.5V, Vds=0.5V Vdd=6.0V, Vds=2.1V Top=-40°C to +85°C 9- 6 Typ. 3.400 1.5 2.0 1.5 0.1 Max. 3.485 Vdetn ×0.08 4.5 6.0 Min. 4.388 Vdetn ×0.02 0.8 1.0 0.5 Typ. 4.500 1.5 2.0 2.0 0.1 0.8 1.0 0.5 Typ. 4.800 1.5 2.0 2.0 0.1 -0.48 2 μA V 1 2 3-(1) 3-(2) 4 ms mV/°C Max. 4.612 Vdetn ×0.08 4.5 6.0 Top=25°C Unit Note V 2 V 2 μA V 1 2 3-(1) 3-(2) 4 mA ms -0.45 Min. 4.680 Vdetn ×0.02 V mA -0.34 Top=-40°C to +85°C Vdetn=4.8V(ELM9748CxB) Parameter Detection voltage 0.8 1.0 0.5 Top=-40°C to +85°C Vdetn=4.5V(ELM9745CxB) Parameter Detection voltage Min. 3.315 Vdetn ×0.02 Top=25°C Unit Note V 2 mV/°C Max. 4.920 Vdetn ×0.08 4.5 6.0 Top=25°C Unit Note V 2 V 2 μA V 1 2 3-(1) 3-(2) 4 mA ms mV/°C ELM97xxxxB CMOS Voltage detector ■Test circuits 1) Current consumption 2) Detection voltage � �� ��� ��� ��� ��� ���������� ��� � �� ���������� ��� ����� � ��� ��� * R=1MΩ 3)-(1) Output current (N-ch) 3)-(2) Output current (P-ch) � ��� ��� � ���������� ��� ��� ��� ��� � ���������� ��� � 4) Delay time �������� �� ��� �� ���� ���������� ��� �� ��� � ��� �� ���� ��� ** Input pulse * R=1MΩ R is unnecessary for CMOS output products. 9- 7 ��� ��� � ELM97xxxxB CMOS Voltage detector ■Marking • Rule 1 SOT-89 � � � � SOT-23 ���� a : the integer digit of the detection voltage Mark Vdetn Mark A 0.*V (N-ch) P B 1.*V (N-ch) R C 2.*V (N-ch) S D 3.*V (N-ch) T E 4.*V (N-ch) U F 5.*V (N-ch) Vdetn 2.*V (CMOS) 3.*V (CMOS) 4.*V (CMOS) 5.*V (CMOS) 1.*V (CMOS) b : the decimal digit of the detection voltage Mark Vdetn Mark 0 .0V 5 * 1 6 *.1V 2 7 *.2V 3 .3V 8 * 4 9 *.4V Vdetn *.5V *.6V *.7V *.8V *.9V c : Assembly lot No. A to Z (I, O, X excepted) d : Assembly lot No. 0 to 9 • Rule 2 a : A (ELM97 series mark) b : the integer digit of the detection voltage Mark Vdetn Mark 0 0.*V (N-ch) Y 1 1.*V (N-ch) W 2 2.*V (N-ch) U 3 3.*V (N-ch) V 4 4.*V (N-ch) Z 5 5.*V (N-ch) c : the decimal digit of the detection voltage Mark Vdetn Mark 0 5 *.0V 1 6 *.1V 2 .2V 7 * 3 8 *.3V 4 .4V 9 * d : Assembly lot No. Vdetn 2.*V (CMOS) 3.*V (CMOS) 4.*V (CMOS) 5.*V (CMOS) 1.*V (CMOS) Vdetn *.5V *.6V *.7V *.8V *.9V 0 to 9 and A to Z (I, O, X excepted) Remarks : ELM97 series have two kinds of marking rules each package. 9- 8 ELM97xxxxB CMOS Voltage detector ■Typical characteristics • Vdetn=1.1V, N-ch(ELM9711NxB) Vout - Vdd ��������� � 4 � 3 (3V Pullup 1M�) ��� ��� � Vout (V) �������� -30� 2 1 � ���� � � ������� � 25� 80� 1 0 � 3 � ��� ��� ��� ��������� ��������� 2 ���������� ���������� � �������� ��� ��� ��� � ��� � ��� ��� ������� ��� ��� �������� ��� � Vdd (V) ���������� ���� ��� ��� � ��� �������������� ���� ��� �������������� ��� ����� �������� ��� ������� �� ���� � ��� ����� ��� � �� �� �������� �� ��� �� 9- 9 ����� ���� ������� ��� �