QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) T - (4 TYP) W V W V V R X Y C LABEL L G2 S2 S1D2 D1 S2 S1 G1 Outline Drawing and Circuit Diagram DimensionsInches Millimeters A 4.25 108.0 B 2.44 62.0 C 1.14+0.04/-0.0129.0+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 1.88±0.01 48.0±0.25 F 0.67 17.0 G 0.16 4.0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 L 0.87 22.0 M 0.33 8.5 DimensionsInches Millimeters Q 0.98 25.0 R 0.11 2.8 S M6 Metric M6 T 0.26 Dia. Dia. 6.5 U 0.02 0.5 V 0.71 18.0 W 0.28 7.0 X 0.16 4.0 Y 0.3 7.5 Z 0.325 8.25 AA 0.624 15.85 AB 0.709 18.0 N P AC AD 04/12 Rev. 6 0.10 0.85 2.5 21.5 0.69 1.012 Description: Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency application. Each module consists of two MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Junction Temperature - 200°C £ Silicon Carbide Chips £ Industry Leading RDS(on) £ High Speed Switching £ Low Switching Losses £ Low Capacitance £ Low Drive Requirement £ Fast 50A Free Wheeling Schottky Diode £ High Power Density £ Isolated Baseplate £ Aluminum Nitride Ceramic Applications: £ High Frequency Power Supply £ High Efficiency Inverter £ High Temperature Environment 17.5 25.7 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210006 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQJD1210006Units Drain-Source Voltage (G-S Short) VDDS 1200Volts Gate-Source Voltage VGSS Drain Current (Continuous) at TC = 150°C -5 / +25 ID Drain Current (Pulsed)* Volts 100Amperes ID(pulse) 250Amperes Maximum Power Dissipation (TC = 25°C, Tj < 175°C) PD Junction Temperature Tj -40 to 200 880Watts Storage Temperature °C Tstg -40 to 150 °C Mounting Torque, M6 Main Terminal Screws — 40 in-lb Mounting Torque, M6 Mounting Screws — 40 in-lb Module Weight (Typical) — 400 Grams V Isolation Voltage VRMS 3000Volts MOSFET Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage V(BR)DSS ID = 50μA, VGS = 0 1200 — — Volts Zero Gate Voltage Drain Current** IDSS VGS = 0, VDS = 1200V — 0.18 1.6 mA Zero Gate Voltage Drain Current** IDSS VGS = 0, VDS = 1200V, Tj = 175°C — 0.40 12.0 mA Gate Leakage Current IGSS VDS = 0, VGS = 20V — — 1.5 μA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 10mA 1.5 2.5 5.0 Volts VDS = VGS, ID = 10mA, Tj = 175°C 1.0 1.7 5.0 Volts Drain-Source On Resistance RDS(on) ID = 100A, VGS = 20V — 15 25 mΩ ID = 100A, VGS = 20V, Tj = 175°C — 20 32 mΩ VDD = 800V, ID = 100A — 140 — nC Gate to Source Charge Qgs Gate to Drain Charge Qgd VDD = 800V, ID = 100A — 220 — nC Total Gate Charge QG VCC = 800V, IC = 100A, VGS = -5/20V — 500 — nC Body Diode Forward Voltage VSD IF = 50A, VGS = -5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) VDD = 800V, ID = 100A, — — TBD ns tr VGS = 0/20V, — — TBD ns Rise Time Turn-off Delay Time Fall Time VGS = 0, VDS = 800V, f = 1MHz — 4.0 — Volts — 10.2 — nF — 1.0 — nF — 0.1 — nF td(off) RG = 10Ω, — — TBD µs tf RL = 856µH — — TBD ns * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage. 2 04/12 Rev. 6 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210006 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units VFM IF = 50A, VGS = -5V — 1.6 2.0 Volts IF = 50A, VGS = -5V, Tj = 175°C — 2.5 3.2 Volts QC VR = 1200V, IF = 50A, di/dt = 2000A/μs — 400 — nC Diode Forward Voltage Diode Capacitive Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction-to-Case Rth(j-c) MOSFET Part — 0.17 — °C/W Thermal Resistance, Junction-to-Case Rth(j-c) Diode Part — 0.28 — °C/W Contact Thermal Resistance Rth(c-s) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W TYPICAL OUTPUT CHARACTERISTICS (Tj = 25ºC) TYPICAL OUTPUT CHARACTERISTICS (Tj = 175ºC) 600 500 400 18 400 16 300 14 200 12 10 100 0 4 8 12 16 14 12 200 10 100 0 4 8 12 16 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) NORMALIZED ON-RESISTANCE VS. TEMPERATURE TYPICAL CAPACITANCE VS. DRAIN-SOURCE VOLTAGE Tj = 25°C Tj = 175°C 300 200 100 0 20 VGS = 20V f = 1MHz CAPACITANCE, Ciss, Coss, Crss 1.2 0.8 0.4 50 100 150 JUNCTION TEMPERATURE, Tj, (°C) 04/12 Rev. 6 200 Ciss 5nF Coss 500pF 50pF 0 200 15 20 GATE CHARGE VS. VGE Crss 0 10 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VGS = 20V 5 0 GATE SOURCE VOLTAGE, VGS, (VOLTS) 50nF 1.6 0 16 300 0 20 18 400 DRAIN CURRENT, ID, (AMPERES) VGE = 20V 500 2.0 NORMALIZED ON-RESISTANCE VGE = 20V DRAIN CURRENT, ID, (AMPERES) DRAIN CURRENT, ID, (AMPERES) Tj = 25°C 0 TRANSFER CHARACTERISTICS (TYPICAL) 400 600 800 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) 1000 16 ID = 100A 12 8 4 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 100 FORWARD CURRENT, IF, (μA) Tj = 25°C 80 Tj = 75°C Tj = 125°C 60 Tj = 175°C 40 20 0 0 1 2 3 4 FORWARD VOLTAGE, VF, (VOLTS) 4 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS (TYPICAL) 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MOSFET) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.17°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) QJD1210006 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.28°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) 04/12 Rev. 6