Powerex Silicon Carbide MOSFET QJD1210006

QJD1210006 Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Silicon Carbide
MOSFET Module
100 Amperes/1200 Volts
A
Y
D
K
K
K
Y
F
S2 G2
U
S2
D1
Z
AB
H
M
AA
Q
EB UU
J
G1 S1
S1D2
H
AC
Q
P
U
AD
G
N
S - NUTS (3 TYP)
T - (4 TYP)
W
V
W
V
V
R
X
Y
C
LABEL
L
G2
S2
S1D2
D1
S2
S1
G1
Outline Drawing and Circuit Diagram
DimensionsInches Millimeters
A
4.25
108.0
B
2.44
62.0
C
1.14+0.04/-0.0129.0+1.0/-0.5
D
3.66±0.01 93.0±0.25
E
1.88±0.01 48.0±0.25
F
0.67
17.0
G
0.16
4.0
H
0.24
6.0
J
0.59
15.0
K
0.55
14.0
L
0.87
22.0
M
0.33
8.5
DimensionsInches Millimeters
Q
0.98
25.0
R
0.11
2.8
S
M6 Metric
M6
T
0.26 Dia.
Dia. 6.5
U
0.02
0.5
V
0.71
18.0
W
0.28
7.0
X
0.16
4.0
Y
0.3
7.5
Z
0.325
8.25
AA
0.624
15.85
AB
0.709
18.0
N
P
AC
AD
04/12 Rev. 6
0.10
0.85
2.5
21.5
0.69
1.012
Description:
Powerex Silicon Carbide MOSFET
Modules are designed for use in
high frequency application. Each
module consists of two MOSFET
Silicon Carbide Transistors in
half-bridge configuration with
each transistor having a reverse
connected fast recovery free-wheel
silicon carbide Schottky diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Junction Temperature - 200°C
£ Silicon Carbide Chips
£ Industry Leading RDS(on)
£ High Speed Switching
£ Low Switching Losses
£ Low Capacitance
£ Low Drive Requirement
£ Fast 50A Free Wheeling
Schottky Diode
£ High Power Density
£ Isolated Baseplate
£ Aluminum Nitride Ceramic
Applications:
£ High Frequency Power Supply
£ High Efficiency Inverter
£ High Temperature Environment
17.5
25.7
1
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QJD1210006
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
SymbolQJD1210006Units
Drain-Source Voltage (G-S Short)
VDDS 1200Volts
Gate-Source Voltage
VGSS
Drain Current (Continuous) at TC = 150°C
-5 / +25
ID
Drain Current (Pulsed)*
Volts
100Amperes
ID(pulse) 250Amperes
Maximum Power Dissipation (TC = 25°C, Tj < 175°C)
PD
Junction Temperature
Tj
-40 to 200
880Watts
Storage Temperature
°C
Tstg
-40 to 150
°C
Mounting Torque, M6 Main Terminal Screws
—
40
in-lb
Mounting Torque, M6 Mounting Screws
—
40
in-lb
Module Weight (Typical)
—
400
Grams
V Isolation Voltage
VRMS 3000Volts
MOSFET Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 50μA, VGS = 0
1200
—
—
Volts
Zero Gate Voltage Drain Current**
IDSS
VGS = 0, VDS = 1200V
—
0.18
1.6
mA
Zero Gate Voltage Drain Current**
IDSS
VGS = 0, VDS = 1200V, Tj = 175°C
—
0.40
12.0
mA
Gate Leakage Current
IGSS
VDS = 0, VGS = 20V
—
—
1.5
μA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 10mA
1.5
2.5
5.0
Volts
VDS = VGS, ID = 10mA, Tj = 175°C
1.0
1.7
5.0
Volts
Drain-Source On Resistance
RDS(on)
ID = 100A, VGS = 20V
—
15
25
mΩ
ID = 100A, VGS = 20V, Tj = 175°C
—
20
32
mΩ
VDD = 800V, ID = 100A
—
140
—
nC
Gate to Source Charge
Qgs
Gate to Drain Charge
Qgd
VDD = 800V, ID = 100A
—
220
—
nC
Total Gate Charge
QG
VCC = 800V, IC = 100A, VGS = -5/20V
—
500
—
nC
Body Diode Forward Voltage
VSD
IF = 50A, VGS = -5V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
VDD = 800V, ID = 100A,
—
—
TBD
ns
tr
VGS = 0/20V,
—
—
TBD
ns
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0, VDS = 800V, f = 1MHz
—
4.0
—
Volts
—
10.2
—
nF
—
1.0
—
nF
—
0.1
—
nF
td(off)
RG = 10Ω,
—
—
TBD
µs
tf
RL = 856µH
—
—
TBD
ns
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage.
2
04/12 Rev. 6
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QJD1210006
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
VFM
IF = 50A, VGS = -5V
—
1.6
2.0
Volts
IF = 50A, VGS = -5V, Tj = 175°C
—
2.5
3.2
Volts
QC
VR = 1200V, IF = 50A, di/dt = 2000A/μs
—
400
—
nC
Diode Forward Voltage
Diode Capacitive Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction-to-Case
Rth(j-c)
MOSFET Part
—
0.17
—
°C/W
Thermal Resistance, Junction-to-Case
Rth(j-c)
Diode Part
—
0.28
—
°C/W
Contact Thermal Resistance
Rth(c-s)
Per 1/2 Module, Thermal Grease Applied
—
0.04
—
°C/W
TYPICAL OUTPUT CHARACTERISTICS
(Tj = 25ºC)
TYPICAL OUTPUT CHARACTERISTICS
(Tj = 175ºC)
600
500
400
18
400
16
300
14
200
12
10
100
0
4
8
12
16
14
12
200
10
100
0
4
8
12
16
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
NORMALIZED ON-RESISTANCE
VS. TEMPERATURE
TYPICAL CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
Tj = 25°C
Tj = 175°C
300
200
100
0
20
VGS = 20V
f = 1MHz
CAPACITANCE, Ciss, Coss, Crss
1.2
0.8
0.4
50
100
150
JUNCTION TEMPERATURE, Tj, (°C)
04/12 Rev. 6
200
Ciss
5nF
Coss
500pF
50pF
0
200
15
20
GATE CHARGE VS. VGE
Crss
0
10
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VGS = 20V
5
0
GATE SOURCE VOLTAGE, VGS, (VOLTS)
50nF
1.6
0
16
300
0
20
18
400
DRAIN CURRENT, ID, (AMPERES)
VGE = 20V
500
2.0
NORMALIZED ON-RESISTANCE
VGE = 20V
DRAIN CURRENT, ID, (AMPERES)
DRAIN CURRENT, ID, (AMPERES)
Tj = 25°C
0
TRANSFER CHARACTERISTICS
(TYPICAL)
400
600
800
DRAIN-SOURCE VOLTAGE, VDS, (VOLTS)
1000
16
ID = 100A
12
8
4
0
0
100
200 300
400
500
600
GATE CHARGE, QG, (nC)
3
Preliminary
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
100
FORWARD CURRENT, IF, (μA)
Tj = 25°C
80
Tj = 75°C
Tj = 125°C
60
Tj = 175°C
40
20
0
0
1
2
3
4
FORWARD VOLTAGE, VF, (VOLTS)
4
5
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MOSFET)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.17°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
QJD1210006
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.28°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
04/12 Rev. 6