QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 5 6 7 8 9 Description: Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 10 11 12 X B M N E G DETAIL "B" 20 19 18 17 16 15 14 13 L T S R W DETAIL "A" V H K C T DETAIL "A" D2 (4 - 6) D1 (10 - 12) G2 (19 - 20) G1 (15 - 16) S2 (17 - 18) S1 (13 - 14) S2 (1 - 3) S1 (7 - 9) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.32 109.8 Q 0.449 11.40 B 2.21 56.1 R 0.885 22.49 C 0.71 18.0 S 1.047 26.6 D 3.70±0.02 94.0±0.5 T 0.15 3.80 E 2.026 51.46 U 0.16 4.0 F 3.17 80.5 V 0.30 7.5 G 1.96 49.8 W 0.045 1.15 H 1.00 25.5 X 0.03 0.8 K 0.87 22.0 Y 0.16 4.0 L 0.266 6.75 Z M 0.26 6.5 AA 0.17 Dia. 0.47 4.3 Dia. 12.1 N 0.59 15.0 AB 0.10 Dia. 2.5 Dia. P 0.586 14.89 AC 0.08 Dia. 2.1 Dia. Features: £ Junction Temperature: 175°C £ Silicon Carbide Chips £ Low Internal Inductance £ Industry Leading RDS(on) £ High Speed Switching £ Low Switching Losses £ Low Capacitance £ Low Drive Requirement £ Fast 100A Free Wheeling Schottky Diode £ High Power Density £ Isolated Baseplate £ Aluminum Nitride Isolation £ 2 Individual Switches per Module £ Copper Baseplate £ RoHS Compliant Applications: £ Energy Saving Power Systems such as: Fans; Pumps; Consumer Appliances £ High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics £ High Temperature Power Systems such as: Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 12/30/14 Rev. 5 Power Electronics in Electric Vehicle and Aviation Systems 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQJD1210010 Units Drain-Source Voltage (G-S Short) VDSS1200 Volts Gate-Source Voltage VGSS Drain Current (Continuous) at TC = 150°C Drain Current (Pulsed)* ID -5 / +25 Volts 100Amperes ID(pulse)250Amperes Maximum Power Dissipation (TC = 25°C, Tj < 175°C) PD 1080Watts Junction Temperature Tj -40 to 175 °C Storage Temperature Tstg -40 to 150 °C Mounting Torque, M6 Mounting Screws — 40 in-lb Module Weight (Typical) — 270 Grams V Isolation Voltage VRMS3000 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 12/30/14 Rev. 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts MOSFET Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage V(BR)DSS ID = 50μA, VGS = 0 1200 — — Volts Zero Gate Voltage Drain Current** IDSS VGS = 0, VDS = 1200V — 0.35 2.6 mA Zero Gate Voltage Drain Current** IDSS VGS = 0, VDS = 1200V, Tj = 175°C — 0.40 4.0 mA Gate Leakage Current IGSS VDS = 0, VGS = 20V — — 1.5 µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 10mA 1.5 2.5 5.0 Volts VDS = VGS, ID = 10mA, Tj = 175°C 1.0 1.7 5.0 Volts Drain-Source On Resistance RDS(on) ID = 100A, VGS = 20V — 15 25 mΩ ID = 100A, VGS = 20V, Tj = 175°C — 20 32 mΩ VDD = 800V, ID = 100A — 140 — nC Gate to Source Charge Qgs Gate to Drain Charge Qgd VDD = 800V, ID = 100A — 220 — nC Total Gate Charge QG VCC = 800V, IC = 100A, VGS = -5/20V — 500 — nC Body Diode Forward Voltage VSD IF = 50A, VGS = -5V Volts Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) VDD = 800V, ID = 100A, tr VGS = -2/20V, td(off) RG = 6.8Ω — tf Inductive Load — Rise Time Turn-off Delay Time Fall Time VGS = 0, VDS = 800V, f = 1MHz — 4.0 — — 10.2 — nF — 1.0 — — 0.1 — nF nF — 17.2 — ns — 13.6 — ns 62 — ns 35.6— ns **Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 12/30/14 Rev. 5 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Diode Forward Voltage VFM Diode Capacitive Charge QC Test Conditions Min. Typ. Max. Units IF = 100A, VGS = -5V — 1.6 2.0 Volts IF = 100A, VGS = -5V, Tj = 175°C — 2.5 3.2 Volts VR = 1200V, IF = 100A, di/dt = 4000A/μs — 550 — nC Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction-to-Case Rth(j-c) MOSFET Part — — 0.138 °C/W Thermal Resistance, Junction-to-Case Rth(j-c) Diode Part — — 0.243 °C/W Contact Thermal Resistance Rth(c-s) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W Lint MOSFET Part — Internal Inductance 10— nH Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 12/30/14 Rev. 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts TYPICAL OUTPUT CHARACTERISTICS (Tj = 25ºC) TYPICAL OUTPUT CHARACTERISTICS (Tj = 175ºC) 600 500 VGE = 20V VGE = 20V 500 DRAIN CURRENT, ID, (AMPERES) DRAIN CURRENT, ID, (AMPERES) Tj = 25°C 18 400 16 300 14 200 12 10 100 0 0 4 8 12 16 12 200 10 100 0 8 12 16 TRANSFER CHARACTERISTICS (TYPICAL) NORMALIZED ON-RESISTANCE VS. TEMPERATURE 2.0 Tj = 25°C Tj = 175°C 300 200 100 0 4 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) NORMALIZED ON-RESISTANCE DRAIN CURRENT, ID, (AMPERES) 14 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) 400 0 16 300 0 20 18 400 5 10 15 GATE SOURCE VOLTAGE, VGS, (VOLTS) 20 20 VGS = 20V 1.6 1.2 0.8 0.4 0 0 50 100 150 200 JUNCTION TEMPERATURE, Tj, (°C) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 12/30/14 Rev. 5 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts TYPICAL CAPACITANCE VS. DRAIN-SOURCE VOLTAGE GATE CHARGE VS. VGE 50nF CAPACITANCE, Ciss, Coss, Crss GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 VGS = 20V f = 1MHz Ciss 5nF Coss 500pF Crss 50pF 0 200 400 600 800 16 12 8 4 0 1000 ID = 100A 0 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) Vf = 25°C Vf = 150°C Vf = 175°C 100 50 0 1 2 FORWARD VOLTAGE, VF, (VOLTS) 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) FORWARD CURRENT, IF, (μA) 200 0 200 300 400 500 600 GATE CHARGE, QG, (nC) FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS (TYPICAL) 150 100 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MOSFET) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.138°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 12/30/14 Rev. 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) QJD1210010 Split Dual SiC MOSFET Module 100 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.243°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 12/30/14 Rev. 5 7