FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED POINT 6 12 Z V AA Z W AA Z Y K Q M M V U X C C TERMINAL CODE U V 1 SUP 2 SVP 3 SWP P 4 SUN 5 SVN A (7) GUP (8) GVP (9) GWP (1) SUP (2) SVP (3) SWP U V 6 SWN 7 GUP 8 GVP (13) 9 GWP 10 GUN W 11 GVN 12 GWN (14) B (10) GUN (11) GVN (12) GWN (4) SUN (5) SVN (6) SWN N 13 TH1 14 TH2 Housing Type Tyco Electronics P/N A: 917354-1 B: 177898-1 Outline Drawing and Circuit Diagram DimensionsInches A 4.33 B 3.54 C 1.38 D 3.82 E 3.15 F 3.27 G 0.26 H 0.48 J 0.51 K 0.65 L 0.63 M 1.26 N 0.35 P 0.45 Q 0.16 Millimeters 110.0 90.0 35.0 97.0 80.0 83.0 6.5 12.0 12.9 16.5 16.0 32.0 8.8 11.5 4.0 DimensionsInches R 0.79 S 1.50 T 2.64 U 1.02 V 0.98 W 0.36 X Dia. 0.25 Y Rad. 0.25 Z 0.57 AA 0.55 AB 1.18 AC 0.69 AD 0.47 AE 0.61 AF 0.18 Millimeters 20.0 38.0 67.0 26.0 25.0 9.1 Dia. 6.5 Rad. 6.5 14.5 14.0 30.0 17.5 12.0 15.5 4.5 Description: Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low Rds(on) and a fast recovery body diode to yield low loss. All components and interconnects are isolated from the heat sink baseplate. This offers simplified system assembly and thermal management. Features: £ Low ESW(off) and Low Rds(on) £ Super-Fast Recovery FreeWheel Diode £ Thermistor for TC Sensing £ Parallel Legs to make a Dual Module at 3X the Rating £ Positive Locking Connectors £ Easy Bus Bar Layout Due to Flow Through Power Design Applications: £Forklift £ Off road Electric Vehicle £Welder £UPS £Chopper Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. FM600TU-2A is a 100V (VDSS), 300 Ampere 6-Pack High Power MOSFET Module. Type Current Rating VDSS AmperesVolts FM300 100 07/12 Rev. 1 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM600TU-2A 6-Pack High Power MOSFET Module 300 Amperes/100 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Channel Temperature Storage Temperature Drain-Source Voltage (G-S Short) SymbolFM600TU-2A Units Tj –40 to 150 °C Tstg –40 to 125 °C VDSS100 Volts Gate-Source Voltage (D-E Short) VGSS±20 Volts Drain Current (TC = 25°C) ID(rms)300 Arms Peak Drain Current (Pulse) IDM 600*Amperes Avalanche Current (L = 10µH, Pulse) IDA 300*Amperes Source Current (TC = 25°C)** Peak Source Current (Pulse)** IS(rms)300 Arms ISM 600*Amperes Maximum Power Dissipation (TC = 25°C, Tj < 150°C)*** PD 960Watts Maximum Peak Power Dissipation (TC' = 25°C, Tj < 150°C)*** PD 1300Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) — 600Grams VISO2500Volts * Pulse width and repetition rate should be such that device channel temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi). ***TC' measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. 2 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM600TU-2A 6-Pack High Power MOSFET Module 300 Amperes/100 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Drain-Cutoff Current Gate-Source Threshold Voltage Gate Leakage Current Static Drain-Source On-State Resistance Symbol Test Conditions Min. Typ. Max. Units IDSS VDS = VDSS, VGS = 0V — — 1.0 mA VGS(th) ID = 30mA, VDS = 10V 4.7 6.0 7.3 Volts IGSS VGS = VGSS, VDS = 0V — — 1.5 µA rDS(on) (Chip) Static Drain-Source On-State Voltage VDS(on) (Chip) Lead Resistance Rlead Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG Turn-on Delay Time td(on) ID = 300A, VGS = 15V, Tj = 25°C — 0.8 1.1 mΩ ID = 300A, VGS = 15V, Tj = 125°C — 1.37 — mΩ ID = 300A, VGS = 15V, Tj = 25°C — 0.24 0.33 Volts ID = 300A, VGS = 15V, Tj = 125°C — 0.41 — Volts ID = 300A, Terminal-Chip, Tj = 25°C — 0.7 — mΩ ID = 300A, Terminal-Chip, Tj = 125°C — 1.0 — mΩ — — 110 nF — — 15 nF VDS = 10V, VGS = 0V — — VDD = 48V, ID = 300A, VGS = 15V — 1800 — — 400 ns VDD = 48V, ID = 300A, — — 600 ns td(off) VGS1 = VGS2 = 15V, RG = 4.2Ω, — — 600 ns tf Inductive Load Switching Operation, — — 300 ns Diode Reverse Recovery Time** trr IS = 300A — — Diode Reverse Recovery Charge** Qrr Source-Drain Voltage VSD Rise Time Turn-off Delay Time Fall Time tr IS = 300A, VGS = 0V 10 — nF nC 250 ns —6.2 — µC — 1.3 Volts — **Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi). 07/12 Rev. 1 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM600TU-2A 6-Pack High Power MOSFET Module 300 Amperes/100 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Thermal Resistance, Channel to Case Rth(j-c) Test Conditions Min. Typ. Max. Units MOSFET part (1/6 Module) — — 0.13 °C/W — — 0.096 °C/W TC Reference Point per Outline Drawing Thermal Resistance, Channel to Case Rth(j-c') MOSFET part (1/6 Module) Measured Point is Just Under the Chips. Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied — 0.1 — °C/W Symbol Test Conditions Min. Typ. Max. Units Thermistors Part Characteristics Resistance* Rth TC = 25°C — 100 — kΩ B Constant* B Resistance at 25°C, 50°C — 4000 — K *B = (InR1 – InR2) / (1/T1 – 1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) 4 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM600TU-2A 6-Pack High Power MOSFET Module 300 Amperes/100 Volts TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 600 600 15 12 10 500 DRAIN CURRENT, ID, (AMPERES) DRAIN CURRENT, ID, (AMPERES) VGS = 20V 400 9 300 200 100 500 400 300 200 VDS = 10V Tj = 25°C Tj = 125oC 100 Tj = 25°C 0 DRAIN-SOURCE ON-STATE VOLTAGE, VDS(ON), (VOLTS) 2.0 0.2 0.4 0.6 0.8 0 1.0 5 7 9 DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS CHARACTERISTICS (TYPICAL ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL - INVERTER PART) 1.0 ID = 600A 0.5 ID = 300A 102 VGS = 0V Tj = 25°C Tj = 125oC ID = 150A 5 10 15 GATE-SOURCE VOLTAGE, VGS, (VOLTS) 07/12 Rev. 1 15 103 Tj = 25°C 0 13 GATE-SOURCE, VGS, (VOLTS) 1.5 0 11 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) SOURCE CURRENT, IS, (AMPERES) 0 20 101 0.5 0.6 0.7 0.8 0.9 1.0 SOURCE-DRAIN VOLTAGE, VSD, VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM600TU-2A 6-Pack High Power MOSFET Module 300 Amperes/100 Volts CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 103 REVERSE RECOVERY CURRENT, trr, Irr, (ns) CAPACITANCE, Cies, Coes, Crss, (nF) Ciss 101 Coss Crss VGS = 0V 100 101 100 100 101 Irr VDD = 48V VGS = ±15V RG = 4.2Ω Tj = 25°C INDUCTIVE LOAD 101 102 103 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) SOURCE CURRENT, IS, (AMPERES) SWITCHING LOSS VS. DRAIN CURRENT (TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) VDD = 48V VGS = ±15V RG = 4.2Ω Tj = 125°C INDUCTIVE LOAD ESW(off) ESW(on) Err 10-1 10-2 101 102 DRAIN CURRENT, ID, (AMPERES) 6 102 100 101 102 SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE) 10-1 trr 103 102 VDD = 48V VGS = ±15V ID = 300A 101 ESW(off) ESW(on) 100 Err 10-1 Tj = 125°C INDUCTIVE LOAD 10-2 0 5 10 15 20 25 30 35 40 45 GATE RESISTANCE, RG, (Ω) 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM600TU-2A 6-Pack High Power MOSFET Module 300 Amperes/100 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL ) SWITCHING TIME VS. DRAIN CURRENT (TYPICAL ) 104 103 tf td(on) VDD = 48V VGS = ±15V ID = 300A Tj = 125°C INDUCTIVE LOAD 102 101 0 20 GATE-SOURCE VOLTAGE, VGS, (VOLTS) tr td(off) 5 tr VDD = 48V VGS = ±15V RG = 4.2Ω Tj = 125°C INDUCTIVE LOAD 102 103 DRAIN CURRENT, ID, (AMPERES) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL ) VDD = 24V VDD = 48V 10 5 500 1000 1500 2000 GATE CHARGE, QG, (nC) 07/12 Rev. 1 102 GATE RESISTANCE, RG, (Ω) ID = 300A 0 tf td(on) 101 101 10 15 20 25 30 35 40 45 15 0 SWITCHING TIMES, (ns) 103 GATE-THRESHOLD VOLTAGE, VGS(th), (VOLTS) SWITCHING TIME, (ns) td(off) 2500 7 6 5 4 3 2 1 0 VGS = 10V ID = 30mA 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE, Tj, (°C) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL ) DRAIN-SOURCE ON-STATE RESISTANCE, rDS(ON), (mΩ) 1.8 ID = 300A VGS = 12V VGS = 15V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE, Tj, (°C) 8 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) FM600TU-2A 6-Pack High Power MOSFET Module 300 Amperes/100 Volts 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-2 10-1 100 101 10-1 10-1 10-2 10-2 10-3 Single Pulse TC = 25°C 10-5 10-4 10-3 10-3 TIME, (s) 07/12 Rev. 1