TBS7 3200A Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697 (412)925-7272 WWW.PWRX.COM Phase Control Thyristor 3200 Amperes/Up to 1600 Volts CATHODE POTENTIAL TERMINAL FOR .187 INCH / 4.75 MM NOM. PUSH-ON TYPE TERMINAL ] Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, hermetic Pow-R-Disc devices employing the field-proven amplifying gate. H ] F DIA. TYP. G DEEP TYP. MARKING CATHODE B DIA. D A DIA. Features: E Low On-State Voltage High di/dt Capability High dv/dt Capability A DIA. D C DIA. GATE TERMINAL FOR .058 INCH / 1.47 MM DIA. NOM. PIN RECEPTACLE ANODE STRIKE DISTANCE = .62 INCH / 15.7 MM MIN. CASE NUMBER TBS NOMINAL DIMENSIONS CREEPAGE DISTANCE = 1.00 INCH / 25.4 MM MIN. SYM. A B C D E F G H INCHES MM 2.88 73.2 4.36 110.7 3.95 100.3 .030 0.76 1.010/1.080 25.65/27.43 .140 3.56 .080 2.03 20 O 20 O 2 Excellent Surge and I t Ratings Applications: Power Supplies Battery Chargers Motor Controllers ALL DIMENSIONS ARE REFERENCE Ordering Information Select the complete 12 digit device part number from the table below. Type Voltage VDRM VRRM Current IT(av) Turn-Off tq Gate Current IGT Lead Code TBS7 12 14 16 32 0 3 DH 1200 V 1400 V 1600 V 3200 A 350 µs typical 200 mA 12" TBS716P13.DOC.12/10/97 TBS7 3200A Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697 (412)925-7272 WWW.PWRX.COM Phase Control Thyristor 3200 Amperes/Up to 1600 Volts Absolute Maximum Ratings Units Characteristics Symbol Non-repetitive Transient Peak Reverse Voltage VRSM RMS On-State Current IT(RMS) 5025 A Average Current 180° Sine Wave, TC=76°C IT(AV) 3200 A Peak One Cycle Surge On-State Current (Non-Repetitive) 60Hz ITSM 44,000 A Peak One Cycle Surge On-State Current (Non-Repetitive) 50Hz ITSM 40500 A Critical Rate-of-Rise of On-State Current (Non-Repetitive) di/dt 300 A/µs Critical Rate-of-Rise of On-State Current (Repetitive) di/dt 100 A/µs 2 2 VRRM+100V 6 2 I t for Fusing for One Cycle, 60 Hz It Peak Gate Power Dissipation PGM 250 W Average Gate Power Dissipation PG(av) 35 W Operating Temperature TJ -40 to 125°C °C Storage Temperature TSTG -40 to 150°C °C 6000 to 10000 26.6 to 44.4 lb. kN Mounting Force 8.07x10 V As TBS716P13.DOC.1/19/2006 Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to suitability for use, reliability, capability or future availability of this product. TBS7 3200A Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697 (412)925-7272 WWW.PWRX.COM Phase Control Thyristor 3200 Amperes/Up to 1600 Volts Electrical Characteristics, TJ=25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Peak Reverse Leakage Current IRRM TJ=125°C, VR=VRRM 150 mA Repetitive Peak Forward Leakage Current IDRM TJ=125°C, VD=VDRM 150 mA Peak On-State Voltage VTM TJ=25°C, ITM=3000A Duty Cycle < 0.01% 1.25 V Threshold Voltage, Low-level V(TO)1 TJ=125°C, for 500A≤ITM<10,000A Slope Resistance, Low-level rT1 0.776 V 0.0889 mΩ 1.032 V 0.0735 mΩ 0.7393 V B -0.01883 - C 0.05747 mΩ D 0.005836 V(TO)2 TJ=125°C, for ITM<10,0000A Threshold Voltage, High-level Slope Resistance, High-level rT2 ABCD VTM Modeling Coefficients A TJ=125°C, for 500A≤ITM<60,000A − Typical Delay Time td ITM=1000A, VD=0.5VDRM 3 µs Maximum Turn-Off Time tq TJ=125°C, IT=1000A, diR/dt=25A/µs dv/dt=20V/µs linear to 80% VDRM 350 µs Minimum Critical dv/dt Expodential to VDRM dv/dt TJ=125°C Gate Trigger Current IGT TJ=25°C, VD=12V 200 mA Gate Trigger Voltage VGT TJ=25°C, VD=12V 4.0 V Non-Triggering Gate Voltage VGDM TJ=125°C, VD=VDRM 0.5 V Peak Forward Gate Current IGTM 4 A Peak Reverse Gate Voltage VGRM 10 V 300 V/µs Thermal Characteristics Characteristics Maximum Thermal Resistance, Double Sided Cooling Junction to Case Case to Sink Symbol RΘJC RΘCS Min. Typ. Max. Units .010 .002 °C/W °C/W TBS716P13.DOC.12/10/97