WINSEMI WTF12A60

F12
A60
WT
WTF12
F12A60
Bi-Directional Triode Thyristor
Features
�
Repetitive Peak off -State Voltage:600V
�
R.M.S On-State Current(IT(RMS)=12A)
�
Isolation voltage(VISO=1500V AC)
�
High Commutation dv/dt
�
Halogen free(WTF12A60-HF)
General Description
General purpose switching and phase control applications .These devices
are intented to be interfaced directly to mirocontrollers,logic integrated
circuits and other low power gate trigger circuits such as fan speed and
temperature modulation control,lighting control and static switching relay.
By using an internal ceramic pad, the TO220F series provides voltage
insulated tab (rated at 2500V RMS) complying with UL standards (file
ref.:E347423)
Absolute Maximum Ratings (TJ=25℃
symbol
unless otherwise specified)
Parameter
Ratings
Units
VDRM
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
600
V
IT(RMS)
Forward Current RMS(All Conduction Angles, TJ=58℃)
12
A
119/130
A
Circuit Fusing Considerations (tp=10ms)
71
A2s
PGM
Peak Gate Power —Forward,(TC=58℃,Pulse With≤1.0us)
5
W
PG(AV)
Average Gate Power —Forward,(Over any 20ms period)
0.5
W
ITSM
2
It
Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)
IFGM
Peak Gate Current—Forward,TJ=125℃(20µs,120PPS)
2
A
VRGM
Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)
10
V
TJ
Junction Temperature
-40~125
℃
Tstg
Storage Temperature
-40~150
℃
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may
switch, to the on-state .the rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
Value
Units
RӨJC
Thermal Resistance Junction to case
3.3
℃/W
RӨJA
Thermal resistance Junction to Ambient
120
℃/W
Rev.A May.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
A60
WTF12
F12A60
Electrical Characteristics(Tc=25℃ unless otherwise specified)
Symbol
Characteristics
Min.
Typ.
Max.
Unit
Peak Forward or Reverse Blocking Current
TC=25℃
-
-
10
µA
(VD=VDRM/VRRM)
TC=125℃
-
-
2
mA
Forward "On" Voltage (Note2) (ITM=20A Peak @ TA =25℃)
-
-
1.4
V
Gate Trigger Current (Continuous dc)
T2+G+
-
-
30
(VD=6 Vdc,RL=10 Ohms)
T2+G-
-
-
30
T2-G-
-
-
30
Gate Trigger Voltage (Continuous dc)
T2+G+
-
-
1.2
(VD=6 Vdc,RL=10 Ohms)
T2+G-
-
-
1.2
T2-G-
-
-
1.2
Gate threshold voltage (TJ=125℃,VD=0.5VDRM)
0.2
-
-
V
Critical rate of rise of commutation Voltage(VD=0.67VDRM)
10
-
-
V/µs
50
-
-
A/µs
-
20
-
mA
IDRM
VTM
IGT
VGT
VGD
dV/dt
mA
V
Critical rate of rise On-State voltage
dVcom/dt
(VD=400V,Tj=125℃,dIcom/dt=0.5A/µs)
Holding Current
IH
(VD=12Vdc, intiationg current=20mA)
Note2.Forward current applied for 1 ms maximum duration ,duty cycle
2/6
Steady, keep you advance
A60
WTF12
F12A60
Fig .1 On-State Voltage vs on-State Current
Fig.2 On-State current vs maximum
Power Disspation
Fig . 3 Gate Characteristeristics
Fig.4 On-State Current vs Allowable
case Temperature
Fig.5 Surge On-State Current Ration
(Non-Repetitive)
Gig.6 Gate Trigger Current vs
Junction Temperation
3/6
Steady, keep you advance
A60
WTF12
F12A60
Gate Trigger Current vs Junction
Fig.7
Fig.7Gate
Junction..
Transient Thermal Impedance
Fig.8
Fig.8Transient
Fig.9 Gate Trigger Characteristics Test Circuit
4/6
Steady, keep you advance
A60
WTF12
F12A60
Marking layout
-
: Winsemi Semiconductor Logo
WW : Weekly code(01-52)
YY :
Last two digit of calendar year
(10:2010;11:2011)
□ : HF
Null
Halogen free
Halogen
∆hPart No.
□
WWYY
5/6
Steady, keep you advance
A60
WTF12
F12A60
TO220F Package Dimension
TO-220F
Unit:mm
6/6
Steady, keep you advance