QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy mounting with other components on a common heatsink. QIQ0630003 Low side Chopper IGBT Module 300 Amperes / 600 Volts Features: SE2 G2 Isolated Mounting Low Drive Requirement Low VCE(sat) Super Fast Diode (2) H Series 150A 600V Chips per IGBT Switch (6) H Series 100A 600V Chips per Diode Metal Baseplate Low Thermal Impedance SE1 G1 NC NC C1 E2 C2/E1 Applications: Note: This chopper module is intended to be used in circuits in which no positive voltage ever appears from E2 to C2E1 Dim A B C D E F G H J K L M N P Q R S Preliminary Inches 3.70 3.150 ±0.01 1.89 1.18 Max. 0.90 0.83 0.71 0.67 0.63 0.51 0.47 0.30 0.28 0.256 Dia. 0.26 M5 Metric 0.16 Choppers Welding Power Supplies Millimeters 94.0 80.0 ±0.25 48.0 30.0 Max 23.0 21.2 18.0 17.0 16.0 13.0 12.0 7.5 7.0 Dia. 6.5 6.5 M5 4.0 Page 1 03/06/2008 QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Maximum Ratings, Tj=25°C unless otherwise specified Ratings Symbol Units Collector Emitter Voltage VCES 600 Volts Gate Emitter Voltage VGES ±20 Volts Collector Current IC 300 Amperes Peak Collector Current ICM 600 Amperes Diode Average Forward Current 180° Conduction, TC=78°C Diode Forward Surge Current 2 Diode I t for Fusing for One Cycle t=8.3mS IFM 300 Amperes IFM 3600 Amperes 2 54000 A sec Watts It 2 Power Dissipation Pd 1100 Junction Temperature Tstg -40 to 125 °C - 17 In-lb Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws - 26 In-lb Module Weight (Typical) - 270 Grams VRMS 2000 Volts V Isolation Static Electrical Characteristics, Tj=25°C unless otherwise specified Characteristic Symbol Test Conditions Min Typ Max Units ICES IGES VCE=VCES VGE=0V VGE=VGES VCE=0V - - 1.0 0.5 mA Gate-Emitter Threshold Voltage VGE(th) IC=30mA, VCE=10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC=300A, VGE=15V - 2.1 2.8 Volts IC=300A, VGE=15V, Tj=125°C - 2.15 - Volts VCC=300V, IC=300A, VGS=15V IF=600A - 900 - nC - 2.0 2.8 Volts Collector Cutoff Current Gate Leakage Current Total Gate Charge QG Diode Forward Voltage VFM μA IF=300A - 1.7 2.2 Volts IF=200A - 1.3 - Volts Max Units Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified Characteristic Symbol Test Conditions Min Typ Input Capacitance Cies VGE=0V - - 30 nF Output Capacitance Coes VCE=10V - - 10.5 nF Reverse Transfer Capacitance Cres f=1MHz - - 6 nF Turn on Delay time td(on) VCC=300V - - 350 nS Rise Time tr IC=300A - - 600 nS td(off) VGE1=VGE2=15V - - 350 nS Fall Time tf - - 300 nS Diode Reverse Recovery Time trr RG=2.1Ω IF=600A - - 110 nS Diode reverse Recovery Charge Qrr diF/dt=-1200A/μS - 1.62 - μC Turn off delay time Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified Characteristic Thermal Resistance, Junction to Case Symbol Test Conditions Min Typ Max Units RθJC Per IGBT - 0.11 TBD °C/W Thermal Resistance, Junction to Case RθJC Per Diode - 0.12 TBD °C/W Contact Thermal Resistance RθCF Per Module - - 0.065 °C/W Preliminary Page 2 03/06/2008