QIP0640001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272 Hermetic Package TBD Asymmetrical Half Bridge IGBT H-Series Hermetic Module 400 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors, four super fast free wheel diodes in an asymmetrical half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. All components are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management. Features: ♦ Low Drive Power ♦ Low VCE(sat) ♦ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode ♦ Isolated Base plate for Easy Heat sinking ♦ Fully Hermetic Package ♦ Package Design Capable of Use at High Altitudes ♦ Package can be modified to adhere to customer dimensions. ♦ High Capacity Diodes (D1 & D3) Schematic: D1 D2 D4 D3 Applications: ♦ AC Motor Control ♦ Motion/Servo Control ♦ Air Craft Applications Ordering Information: Page 1 PRELIMINARY 06/06/97 QIP0640001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272 Asymmetrical Half Bridge IGBT H-Series Hermetic Module 400 Amperes/600 Volts Contact Powerex Custom Modules Page 2 PRELIMINARY 06/06/97 QIP0640001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272 Maximum Ratings, Tj=25°°C unless otherwise specified Ratings Collector Emitter Voltage Gate Emitter Voltage Collector Current Peak Collector Current Diode Forward Current (D2,D4) Diode Forward Surge Current (D2,D4) Diode Forward Current (D1,D3) V Isolation Asymmetrical Half Bridge IGBT H-Series Hermetic Module 400 Amperes/600 Volts Symbol VCES VGES IC ICM IFM IFM IFM VRMS Units Volts Volts Amperes Amperes Amperes Amperes Amperes Volts 600 ±20 400 800* 400 800* 400 2500 Static Electrical Characteristics, Tj=25°°C unless otherwise specified Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) VCE(sat) Total Gate Charge QG Diode Forward Voltage (D1,D3) VFM Diode Forward Voltage (D2,D4) VFM Test Conditions VCE=VCES VCE=0V IC=40mA, VCE=10V IC=400A, VGE=15V IC=400A, VGE=15V, Tj=150°C VCC=300V, IC=400A, VGS=15V IE=400A, VGS=0V IE=200A, VGS=0V Min 4.5 Typ Max Units 6.0 1.0 0.5 7.5 mA µA Volts 2.1 2.8 Volts 2.15 Volts 1200 nC 2.0 Volts 2.8 Volts Dynamic Electrical Characteristics, Tj=25°°C unless otherwise specified Characteristic Symbol Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn off delay time Cies Coes Cres td(on) tr td(off) Fall Time Diode Reverse Recovery (D1,D3) Diode reverse Recovery Charge (D1, D3) Diode Reverse Recovery (D2, D4) Diode reverse Recovery Charge (D2,D4) tf trr Qrr Page 3 trr Qrr Test Conditions VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE1=VGE2=15 V RG=1.6Ω IE=400A diE/dt=400A/µS IE=200A diE/dt=400A/µS PRELIMINARY Min Typ Max Units 40 14 8 350 600 350 nF nF nF nS nS nS 300 400 nS nS µC 110 nS µC 80 1.08 06/06/97 QIP0640001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272 Asymmetrical Half Bridge IGBT H-Series Hermetic Module 400 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj=25°°C unless otherwise specified Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case (D1,D3) Thermal Resistance, Junction to Case (D2,D4) Page 4 Symbol RθJC RθJC Test Conditions Per IGBT Per Diode RθJC Per Diode PRELIMINARY Mi n Typ Max Units 0.085 0.08 °C/W °C/W 0.18 °C/W 06/06/97