M57962K Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Hybrid Integrated Circuit For Driving IGBT Modules Outline Drawing 51 MAX 27 MAX 0.25+0.2/-0.1 4.5p1.5 3 MAX 0.5+0.15/-0.1 6.5 MAX 2.54 14 1 12.5 MAX 7.5 MAX 10 MAX Block Diagram 4 VCC LATCH DETECT CIRCUIT 2 CONTROL PIN FOR ttrip 1 DETECT PIN 14 TIMER & RESET CIRCUIT INTERFACE OPTO-COUPLER 1807 13 Gate Driver Features: £ Electrical Isolation between input and output with opto-couplers. (Viso = 3750VRMS for 1 min.) £ Two supply drive topology 5 V O GATE SHUTDOWN CIRCUIT Description: M57962K is a hybrid integrated circuit designed to provide optimum gate drive for IGBT modules. This device provides high current optically isolated gate drive with a large output voltage swing. The driver also provides short circuit protection based on desaturation detection. 8 FAULT OUTPUT £ Built in short circuit protection circuit with a pin for fault output £ TTL compatible input interface 6 V EE 3 , 7 – NC Application: To drive IGBT modules for general industrial use apparatus. Recommended Modules: VCES = 600V Series (up to 600A Class) VCES = 1200V Series (up to 400A Class) VCES = 1700V Series (up to 400A Class) 11/06 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver Absolute Maximum Ratings, Ta =25°C unless otherwise specified Item Symbol Test Conditions Limit Units Supply Voltage VCC DC 18 Volts VEE Input Voltage DC VI Applied between: 13 – 14 -15 Volts -1 ~ 7 Volts 50% Duty Cycle, Pulse Width 1ms Output Voltage VO Output Voltage “H” VCC Volts Output Current IOHP Pulse Width 2µs, f ≤ 20kHz -5 Amperes IOLP Pulse Width 2µs, f ≤ 20kHz 5 Amperes Isolation Voltage Viso Sinewave Voltage 60Hz, 1 min. 3750 VRMS 85 °C Case Temperature Tc Operating Temperature Topr No Condensation Allowable -20 ~ 60 °C Storage Temperature tstg No Condensation Allowable -25 ~ 100 °C Fault Output Current IFO Applied Pin 8 20 mA Input Voltage VR1 Applied Pin 1 50 Volts Electrical Characteristics, Ta = 25°C, VCC = 15V, VEE = -10V unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Supply Voltage VCC Recommended Range 14 15 — Volts VEE Recommended Range -7 — -10 Volts Pull-up Voltage on Input Side VIN Recommended Range 4.75 5.00 5.25 Volts “H” Input Current IIH Recommended Range 15.2 16 19 mA Switching Frequency f Recommended Range — — 20 kHz Gate Resistance RG Recommended Range 2 — — Ω IIH VIN = 5V “H” Input Current “H” Output Voltage VOH — 16 — mA 13 14 — Volts “L” Output Voltage VOL -8 -9 — Volts “L-H” Propagation Time tPLH IIH = 16mA — 0.5 1.0 µs “L-H” Rise Time tr IIH = 16mA — 0.3 1.0 µs “H-L” Propagation Time tPHL IIH = 16mA — 1.0 1.3 µs “H-L” Fall Time tf IIH = 16mA — 0.3 1.0 µs Timer ttimer Between start and cancel 1.0 — 2.0 ms — 5.0 — mA Fault Output Current IFO Controlled Time Detect Short Circuit 1 ttrip1 Controlled Time Detect Short Circuit 2* ttrip2 SC Detect Voltage VSC (under input sign “L”) Applied Pin 1 2 – 4 pin, R = 4.7kΩ : 15V and more, Pin Pin Pin 8 1 2 : Open : 15V and more, — 2.6 — µs — 3.0 — µs 15 — — Volts : 10pF (Connective Capacitance) Collector Voltage of Module *Length of wiring of condenser controlled time detect short circuit is within 5cm from 2 and 4 pin coming and going. 11/06 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver PROPAGATION DELAY TIME VS. AMBIENT TEMPERATURE CHARACTERISTICS (TYPICAL) PROPAGATION DELAY TIME VS. SIGNAL VOLTAGE CHARACTERISTICS (TYPICAL) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 20 40 60 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 3.5 80 4.5 5.0 5.5 2 1 0 6.0 0 20 40 60 AMBIENT TEMPERATURE, Ta, (°C) CONTROLLED TIME DETECT VS. CONNECTIVE CAPACITANCE CHARACTERISTICS (TYPICAL) POWER DISSIPATION VS. AMBIENT TEMPERATURE (MAXIMUM RATING) DISSIPATION CURRENT VS. SUPPLY VOLTAGE INPUT SIGNAL "L" (TYPICAL) 5 80 25 Ta = 25°C POWER DISSIPATION, PD, (WATTS) 7 3 INPUT SIGNAL VOLTAGE, VI, (VOLTS) VCC = 15V VEE = -10V Ta = 25°C 8 4 AMBIENT TEMPERATURE, Ta, (°C) 9 CONTROLLED TIME DETECT SHORT CIRCUIT, ttrip, (Ms) 4.0 VCC = 15V VEE = -10V ttrip2 : Ctrip = 1000pF ttrip1 : Ctrip = 0 5 6 5 4 3 2 4 DISSIPATION CURRENT, (mA) 0 6 VCC = 15V VEE = -10V RG = 3.17 Ta = 25°C tPHL tPLH CONTROLLED TIME DETECT SHORT CIRCUIT, ttrip1, ttrip2, (Ms) VCC = 15V VEE = -10V RG = 3.17 VIN = 5V tPHL tPLH PROPAGATION DELAY TIME "L-H", tPLH, (Ms) PROPAGATION DELAY TIME "H-L", tPHL, (Ms) PROPAGATION DELAY TIME "L-H", tPLH, (Ms) PROPAGATION DELAY TIME "H-L", tPHL, (Ms) 1.6 CONTROLLED TIME DETECT VS. AMBIENT TEMPERATURE CHARACTERISTICS (TYPICAL) 3 2 1 20 15 10 5 1 0 0 25 50 75 100 125 150 0 0 20 CONNECTIVE CAPACITANCE, Ctrip, (pF) PIN: 2 4 Switching Time Definitions VIN VOUT tf 90% 60 0 80 AMBIENT TEMPERATURE, Ta, (°C) 0 10 20 30 40 SUPPLY VOLTAGE, VCC, (VOLTS) APPLIED BETWEEN: 4 6 Short Circuit Protection VIN tr 40 0V VOUT 0V -5V ttrip 1, 2 50% ttimer 10V 10% 10V 0V tPLH 11/06 tPHL 8 Pin Output Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver Application Circuit M57962K +5V CONTROL 14 13 10 9 8 6 5 4 3 2 1 RF + Ctrip PS2501 B1 D1 + + C1 FAULT 30V C2 CF 4.7k C RG + IGBT MODULE 18V 18V VCC G + E E VEE Component Selection: Design VCC, VEE RG C1, C2 D1 Ctrip B1 RF CF Description +15V/-10V Typical, See data sheet for usable limits Adjust for application requirements. See IGBT module application notes for recommendations and power rating 10µF-100µF 25V low impedance electrolytic Ultra fast recovery trr<100ns, High voltage Vrrm>Vces(IGBT) 0-200pF adjusts desaturation trip time (ttrip) CMOS Buffer 74HC04 or similar – Must actively pull high to maintain noise immunity 390Ω - 510Ω (Usually unnecessary) 100pF – 470pf (Usually unnecessary) Notes: (1) Power supply decoupling capacitors C1 and C2 should be connected as close as possible to the pins of the gate driver and must be sized to have appropriate ESR and ripple current capability for the IGBT being driven. (2) Ctrip should be connected as close as possible to the pins of the gate driver to avoid noise pick-up. (3) All zener diodes 1W, all resistors 0.25W unless otherwise noted. (4) When RG is less than 3 times the minimum value, Collector Voltage surges may affect Gate Drive. M57962K +5V CONTROL 14 13 10 9 8 5 4 3 2 1 RF + D1 Ctrip PS2501 B1 + + C1 FAULT 4.7k 30V C2 CF C RG IGBT MODULE 18V 18V + 2.7k VCC G E 8.2V 6 E 11/06 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver General Description The M57962K is a hybrid integrated circuit designed to provide gate drive for high power IGBT modules. This circuit has been optimized for use with Powerex 1700V IGBT modules. However, the output characteristics are compatible with most MOS gated power devices. The M57962K features a compact single-inline package design. The upright mounting minimizes required printed circuit board space to allow efficient and flexible layout. The M57962K converts logic level control signals into fully isolated +15V/-8V gate drive with up to 5A of peak drive current. Control signal isolation is provided by an integrated high speed optocoupler. Short circuit protection is provided by means of destauration detection. Short Circuit Protection Figure 1 shows a block diagram of a typical desaturation detector. In this circuit, a high voltage fast recovery diode (D1) is connected to the IGBT’s collector to monitor the collector to emitter voltage. When the IGBT is in the off state, VCE is high and D1 is reverse biased. With D1 off the (+) input of the comparator is pulled up to the positive gate drive power supply (V+) which is normally +15V. When the IGBT turns on, the comparators (+) input is pulled down by D1 to the IGBT’s VCE(sat). The (-) input of the comparator is supplied with a fixed voltage (VTRIP). During a normal on-state condition the comparator’s (+) input will be less than VTRIP and it’s output will be low. During a normal off-state condition the comparator’s (+) input will be larger than V+ D1 + DELAY ttrip Vtrip C IGBT MODULE SHUTDOWN GATE DRIVE RG G E E Figure 1. Desaturation Detector 11/06 Operation of the M57962K Desaturation Detector The Powerex M57962K incorporates short circuit protection using desaturation detection as described above. A flow chart for the logical operation of the short-circuit protection is shown in Figure 2. When a desaturation is detected the hybrid gate driver performs a soft shut down of the IGBT and starts a timed (ttimer) 1.5ms lock out. The soft turn-off helps to limit the transient voltage that may be generated while interrupting the large short circuit current flowing in the IGBT. During the lock out the driver pulls Pin 8 low to indicate the fault status. Normal operation of the driver will resume after the lock-out time has expired and the control input signal returns to its off state. Adjustment of Trip Time COMPARE AND INPUT VTRIP and it’s output will be high. If the IGBT turns on into a short circuit, the high current will cause the IGBT’s collector-emitter voltage to rise above VTRIP even though the gate of the IGBT is being driven on. This abnormal presence of high VCE when the IGBT is supposed to be on is often called desaturation. Desaturation can be detected by a logical AND of the driver’s input signal and the comparator output. When the output of the AND goes high a short circuit is indicated. The output of the AND can be used to command the IGBT to shut down in order to protect it from the short circuit. A delay (tTRIP) must be provided after the comparator output to allow for the normal turn on time of the IGBT. The tTRIP delay is set so that the IGBTs Vce has enough time to fall below VTRIP during normal turn on switching. If tTRIP is set too short, erroneous desaturation detection will occur. The maximum allowable tTRIP delay is limited by the IGBT’s short circuit withstanding capability. In typical applications using Powerex IGBT modules the recommended limit is 10μs. The M57962K has a default short-circuit detection time delay (tTRIP) of approximately 2.5μs. This will prevent erroneous detection of short-circuit conditions as long as the series gate resistance (RG) is near the minimum recommended value for the module being used. The 2.5μs delay is appropriate for most applications so adjustment will not be necessary. However, in some low frequency applications it may be desirable to use a larger series gate resistor to slow the switching of the IGBT, reduce noise, and limit turn-off transient voltages. When RG is increased, the switching Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 M57962K Hybrid IC for IGBT Gate Driver START IS VCE > VSC NO YES IS INPUT SIGNAL ON NO delay time of the IGBT will also increase. If the delay becomes long enough so that the voltage on the detect Pin 1 is greater than VSC at the end of the tTRIP delay the driver will erroneously indicate that a short circuit has occurred. To avoid this condition the M57962K has provisions for extending the tTRIP delay by connecting a capacitor (CTRIP) between Pin 2 and VCC (Pins 4). The effect of adding CTRIP on trip time is shown in Figure 3. If tTRIP is extended care must be exercised not to exceed the short-circuit withstanding capability of the IGBT module. Normally this will be satisfied for Powerex NF and A-Series IGBT modules as long as the total shut-down time does not exceed 10μs. YES DELAY ttrip ttimer FAULT SIGNAL (PIN 8) 10V ttrip YES IS VCE > VSC 10V NO YES -5V VO (PIN 5) SLOW SHUTDOWN DISABLE OUTPUT SET FAULT SIGNAL WAIT ttimer Figure 3. Adjustment of ttrip YES IS INPUT SIGNAL OFF NO YES CLEAR FAULT SIGNAL ENABLE OUTPUT Figure 2. VLA504-01 Desaturation Detector 11/06