FM25Q16B - FIDELIX

FM25Q16B
FM25Q16B
16M-BIT
Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI
Rev.01 (Nov.16. 2011)
1
FM25Q16B
Documents title
16M bit Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI
Revision History
Revision
No.
0.0
0.1
History
Initial Draft
Add 24ball TFBGA
Draft date
Remark
Oct.18,2011
Nov.16.2011
preliminary
preliminary
Rev.01 (Nov.16. 2011)
2
FM25Q16B
Table of Contents
1.
FEATURES……………………………………….……………………………………..……………………5
2.
GENERAL DESCRIPTION……………………….………………………………………………………....5
3.
PIN / PAD CONFIGURATION………………….…………………………………………………………...6
3.1
3.2
3.3
3.4
3.5
8-Pin SOIC 150-MIL / 208-MIL / VSOP 208-MIL………………..………………………….6
8-Pad WSON 6X5-MM……………………………………………………..………………….6
8-Pin PDIP 300-MIL…………………………………………………………………………….6
16-Pin SOIC 300-MIL………………………………………………………………………..…7
24ball TFBGA…………………………………………………………………………………...7
4.
PIN / PAD DESCRIPTION………………………………………………………………………..………….8
5.
4.1
SOIC 150/208-MIL, VSOP 208-MIL, WSON 6X5-MM, PDIP 300-MIL,24ball TFBGA….8
4.2
SOIC 300-MIL………………………………………………………..........……….…………..8
4.3
Package Type…………………………………………………………………………..……….8
SIGNAL DESCRIPTION……………………………………………………………………………………..9
5.1
5.2
5.3
5.4
5.5
Chip Select (/CS)……………………………………….………………………………………9
Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)………………………9
Write Protect (/WP)…………………………………………….……….……….……….…….9
HOLD (/HOLD)…………………………………………………………………….……………9
Serial Clock (CLK)…………………………………………………………..………….………9
6.
BLOCK DIAGRAM…………………………………………………………………….…………………….10
7.
FUNCTIONAL DESCRIPTION…………………………………………………..………………………..11
7.1
7.2
7.3
7.4
8.
WRITE PROTECTION…………………………………………………………….….……..……………..12
8.1
9.
Standard SPI Instructions………………………………………..………….………………..11
Dual SPI Instructions…………………………………….……………………………………11
Quad SPI Instructions……………………………………………….……..…………………11
Hold Function………………………………………………………………………………….11
Write protect Features………………………………………………………………..………12
STATUS REGISTER………………………………………………………………….…………………….13
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
BUSY………………………………………………………………………..………………….14
Write Enable Latch (WEL)……………………………………………………………………14
Block Protect Bits (BP2, BP1, BP0)…………………………………………………………14
Top/Bottom Block protect (TB)……………………………………….………………………14
Sector/Block Protect (SEC)…………………………………………………………………..14
Status Register protect (SRP1, SRP0)…………………………………….……………….15
Quad Enable (QE)……………………………………………………................…………..15
Status Register Memory Protection…………………………………………………………16
10. INSTRUCTIONS…………………………………………………………………………………………….17
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
10.10
10.11
10.12
10.13
10.14
10.15
10.16
10.17
Manufacturer and Device Identification………………………………….………………….17
Instruction Set Table 1……………………………………………….……………………….18
Instruction Set Table 2………………………………………………………………………..19
Write Enable (06h)…………………………………….………………………………………20
Write Disable (04h)……………………………………………………………………………20
Read Status Register-1 (05h) and Read Status Register-2 (35h)…………………….…21
Write Status Register (01h)…………………………………………………………………..22
Read Data (03h)……………………………………………………..……………………….23
Fast Read (0Bh)……………………………………………………………...……………….24
Fast Read Dual I/O (BBh)…………………………………………..……………………….25
Fast Read Quad I/O (EBh)……………………………………..……………………………27
Page Program (02h)…………………………………………………………………………..28
Quad Data Input Page Program (32h)...........................................................................29
Quad Data Page Program (38h)………………………………….…………………………30
Sector Erase (20h).........................................................................................................31
32KB Block Erase (52h)………………………………….…………………………………..32
64KB Block Erase (D8h)……………………………….…………………………………….33
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FM25Q16B
10.18
10.19
10.20
10.21
10.22
10.23
10.24
10.25
10.26
10.27
10.28
10.29
Chip Erase (C7h / 60h)……………………………………………………………………….34
Erase/ Program Suspend (75h)……………………………………………………………35
Erase/ Program Resume (7Ah)…………………………………………………………….36
Deep Power-down (B9h)……………………………..……………………………………..37
Release Deep Power-down / Device ID (ABh)………………………………..…………..38
Read Manufacturer/ Device ID (90h),(EFh),(DFh)…………………..…………………….39
JEDEC ID (9Fh)……………………………………………………………………………….41
Mode Bit Reset (FFh)…………………………………………………………………………42
Enter Secured OTP (B1h)……………………………………………………………………43
Exit Secured OTP (C1h)………………………………………….…………………………..43
Read Security Register (2Bh)………………………………………………….…………….44
Write Security Register (2Fh)…………………….………………………………………….45
11. 4K-bit Secured OTP………………………………………………………………….……………………..46
12. ELECTRICAL CHARACTERISTICS………………………………………………………………………47
12.1
12.2
12.3
12.4
12.5
12.6
12.7
12.8
12.9
12.10
12.11
Absolute Maximum Ratings………………………………………………………………….47
Operating Ranges…………………………………………………….………………………47
Endurance and Data Retention……………………………………….……………………..47
Power-up Timing and Write Inhibit Threshold…………………..………………………….48
DC Electrical Characteristics…………………………………………..……………………49
AC Measurement Conditions…………………………………….…………………………..50
AC Electrical Characteristics…………………………………………………………………51
AC Electrical Characteristics (cont’d)……………………………………………………….52
Serial Output Timing…………………………………………………………..………………53
Input Timing……………………………………………………..……………………………..53
Hold Timing………………………………………………………………………..…………..53
13. PACKAGE SPECIFICATION………………………………………………………………………………54
13.1
13.2
13.3
13.4
13.5
13.6
13.7
13.8
8-Pin SOIC 150-mil……………………………………………………………………………54
8-Pin SOIC 208-mil……………………………………………………………………………55
8-Pin VSOP 208-mil…………………………………………………………………………..56
8-Pin PDIP 300-mil……………………………………………………………………………57
8-contact 6x5 WSON…………………………………………………………………………58
8-contact 6x5 WSON Cont’d…………………………………..…………………………….59
16-Pin SOIC 300-mil………………………………………………………………………….60
24ball TFBGA………………………………………………………………………………….61
14. ORDERING INFORMATION…………………………………….…………………………………………62
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FM25Q16B
1. FEATURES
■ SPI Flash Memory
－16M-bit / 2M–byte Serial Flash
－256-bytes per programmable page
－4K-bit secured OTP
■ Standard, Dual or Quad SPI
－Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
－Dual SPI: CLK, /CS, IO0, IO 1, /WP, /Hold
－Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
■ High Performance
－104MHz clock operation
－208MHz equivalent Dual SPI
－416MHz equivalent Quad SPI
－50MB/S continuous data transfer rate
－31MB/S random access (32-byte fetch)
－Comparable to X16 Parallel Flash
■ Flexible Architecture
－Uniform Sector Erase (4K-byte)
－Block Erase (32K and 64K-bytes)
－Erase Suspend & Resume
■ Endurance
－100K program/ erase cycles
－Single 2.7 to 3.6V supply
－5mA active current
－<3μA Deep Power-down (typ.)
■ wide Temperature Range
－-40℃ to +85℃ operating range
■ Advanced Security Features
－Software and Hardware Write-protect
－Top or Bottom, Sector or Block selection
－Lock-Down and OTP protection
■ Package Options
－8-pin SOIC 150-mil
－8-pin SOIC 208-mil
－8-pad WSON 6x5-mm
－16-pin SOIC 300-mil
－8-pin PDIP 300-mil
－8-pin VSOP 208-mil
－24 ball TFBGA
■ Package Material
－Fidelix all product Green package
Lead-free & Halogen-free
RoHS Compliant
■ Low Power Consumption
2. GENERAL DESCRIPTION
The FM25Q16B SPI flash supports the standard Serial peripheral Interface (SPI), and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0(DI), I/O1(DO), I/O2(/WP), and
I/O3(/HOLD).
SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz
for Dual Output and 416MHz for Quad Output when using the Fast Read Dual/Quad I/O
instructions. These transfer rates are comparable to those of 8 and 16-bit Parallel Flash memories.
The FM25Q16B array is organized into 8,192 programmable pages of 256-bytes each. Up to 256
bytes can be programmed at a time using the Page Program instructions. Pages can be erased
Sector, 32KB Block, 64KB Block or the entire chip.
The devices operate on a single 2.7V to 3.6V power supply with current consumption as low as
5mA active and 3μA for Deep Power-down. All devices offered in space-saving packages. The
device supports JEDEC standard manufacturer and device identification with a 4K-bit Secured
OTP.
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FM25Q16B
3. PIN / PAD CONFIGURATION
3.1 8-Pin SOIC 150-MIL / 208-MIL / VSOP 208-MIL
/ CS
1
8
VCC
DO(IO 1)
2
7
/HOLD(IO 3)
/ WP(IO 2)
3
6
CLK
GND
4
5
DI(IO0)
Figure 1a. Pin Assignments, 8-pin SOIC 150-mil / 208-mil / VSOP 208-mil
3.2 8-Pad WSON 6X5-MM
/CS
1
8
VCC
DO(IO1)
2
7
/HOLD(IO3)
3
6
CLK
4
5
DI(IO0)
/WP(IO2)
GND
Figure 1b. Pad Assignments, 8-pad WSON
3.3 8-Pin PDIP 300-MIL
/CS
VCC
DO(IO1)
/HOLD(IO3)
/WP(IO2)
CLK
GND
DI(IO0)
Figure 1c. Pin Assignments, 8-pin PDIP 300-mil
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FM25Q16B
3.4 16-Pin SOIC 300-MIL
/HOLD(IO3 )
1
16
CLK
VCC
2
15
DI(IO0 )
N/C
3
14
N/C
N/C
4
13
N/C
N/C
5
12
N/C
N/C
6
11
N/C
/CS
7
10
GND
DO(IO1 )
8
9
/WP(IO2 )
Figure 1d. Pin Assignments, 16-pin SOIC 300-mil
3.5 24ball TFBGA
Figure 1e. Pin Assignments, 24-Ball TFBGA
Rev.01 (Nov.16. 2011)
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FM25Q16B
4. PIN / PAD DESCRIPTION
4.1 SOIC 150-MIL / 208-MIL, VSOP 208-MIL, WSON 6X5-MM, PDIP 300-MIL,
24ball TFBGA
PIN NO.
PIN NAME
I/O
FUCTION
1
/CS
I
Chip Select Input
2
DO(IO1)
I/O
Data Output (Data Input Output 1)*¹
3
/WP(IO2)
I/O
Write Protect Input (Data Input output) *²
4
GND
5
DI(IO0)
I/O
Data Input (Data Input Output 0)*¹
6
CLK
I
Serial Clock Input
7
/HOLD(IO3)
I/O
Hold Input (Data Input output 3) *²
8
VCC
Ground
Power Supply
*1 IO0 and IO1 are used for Dual and Quad instructions
*2 IO0－IO3 are used for Quad instructions
4.2 SOIC 300-MIL
PAD NO.
PAD NAME
I/O
1
/HOLD(IO3)
I/O
FUCTION
2
VCC
Power Supply
3
N/C
No Connect
4
N/C
No Connect
5
N/C
No Connect
6
N/C
No Connect
7
/CS
I
8
DO(IO1)
I/O
Data output (Data Input Output 1)* ¹
9
/WP(IO2)
I/O
Write Protection Input (Data Input Output 2)* ²
10
GND
Ground
Hold Input(Data Input Output 3)* ²
Chip Select Input
11
N/C
No Connect
12
N/C
No Connect
13
N/C
No Connect
14
N/C
No Connect
15
DI(IO0)
I/O
16
CLK
I
Data Input (Data Input Output 0)* ¹
Serial Clock Input
*1 IO0 and IO1 are used for Dual and Quad instructions
*2 IO0_IO3 are used for Quad instructions
4.3 Package Type
FM25Q16B is offered in an 8-pin plastic 150-mil width SOIC, 8-pin plastic 208-mil width VSOP, 8pin plastic 208-mil width SOIC, 6x5-mm WSON, 8-pin PDIP and 16-pin plastic 300-mil width SOIC
as shown in figure 1a, 1b,1c and 1d respectively. Package diagrams and dimensions are illustrated
at the end of this datasheet.
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FM25Q16B
5. SIGNAL DESCRIPTION
5.1 Chip Select (/CS)
When this input signal is high, the device is deselected and serial data output is at high impedance.
Unless an internal program, erase or write status register cycle is in progress, the device will be in
the standby power mode (this is not the deep power-down mode). Driving Chip Select (/CS) low
enables the device, placing it in the active power mode. After power-up, a falling edge on Chip
Select (/CS) is required prior to the start of any instruction.
5.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The FM25Q16B supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI
instructions use the serial DI (input) pin to write instructions, addresses or data to the device on the
rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the serial DO (output) to
read data or status from the device on the falling edge of CLK.
Dual and Quad SPI instructions use the serial IO pins to write instructions, addresses or data to
the device on the rising edge of CLK and read data or status from the device on the falling edge of
CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to
be set. When QE=1 the /WP pin becomes IO2 and /HOLD pin becomes IO3.
5.3 Write Protect (/WP)
The Write Protect (/WP) pin can be used to protect the Status Register against data modification.
Used in company with the Status Register’s Block Protect (SEC. TB, BP2, BP1 and BP0) bits and
Status Register Protect (SRP) bits, a portion or the entire memory array can be hardware protected.
The /WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O, the /WP pin
(Hardware Write Protect) function is not available since this pin is used for IO2. See figure 1a, 1b,
1c and 1d for the pin configuration of Quad I/O operation.
5.4 HOLD (/HOLD)
The /HOLD pin is used to pause any serial communications with the device without deselecting the
device. When /HOLD goes low, while /CS is low, the DO pin will be at high impedance and signals
on the DI and CLK pins will be ignored (don’t care). When /HOLD goes high, device operation can
resume. The /HOLD function can be useful when multiple devices are sharing the same SPI
signals. The /HOLD pin is active low. When the QE bit of Status Register-2 is set Quad I/O, the
/HOLD pin function is not available since this pin used for IO3. See figure 1a, 1b, 1c and 1d for the
pin configuration of Quad I/O operation.
5.5 Serial Clock (CLK)
This input signal provides the timing for the serial interface. Instructions, addresses, or data
present at serial data input are latched on the rising edge of Serial Clock (CLK). Data are shifted
out on the falling edge of the Serial Clock (CLK).
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FM25Q16B
6. BLOCK DIAGRAM
Block Segmentation
xxFF00h
1FFF00h
●
1FF000h
xxFFFFh
Block 31
(64KB)
1FFFFFh
●
1FF0FFh
Sector 15
(4KB)
xxF000h
xxF0FFh
xxEF00h
xxEFFFh
Sector 14
(4KB)
xxE000h
xxE0FFh
xxDF00h
xxDFFFh
Sector 13
(4KB)
xxD000h
xxD0FFh
xx2F00h
Write Protect Logic and Ro w Decode
●
●
●
xx2FFFh
Sector 2
(4KB)
xx2000h
xx20FFh
xx1F00h
xx1FFFh
Sector 1
(4KB)
xx1000h
xx10FFh
xx0F00h
xx0FFFh
Sector 0
(4KB)
xx0000h
xx00FFh
10FF00h
●
100000h
Block 16
(64KB)
10FFFFh
●
1000FFh
0FFF00h
●
0F0000h
Block 15
(64KB)
0FFFFFh
●
0F00FFh
●
●
●
/WP (IO2)
Write
Control
Logic
08FF00h
●
080000h
Block 8
(64KB)
08FFFFh
●
0800FFh
07FF00h
●
070000h
Block 7
(64KB)
07FFFFh
●
0700FFh
Status
Register
●
●
●
High
Voltage
Generators
/HOLD (IO3)
CLK
CS
DI (IO0)
DO (IO1)
SPI Command
And Control
Logic
Page Address
Latch / Counter
00FF00h
●
000000h
Beginning
Page
Address
Block 0
(64KB)
00FFFFh
●
0000FFh
Ending
Page
Address
Column Decode
And 256Byte Page buffer
Data
Byte Address Latch /
Counter
Figure 2. Block Diagram of FM25Q16B
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FM25Q16B
7. FUNCTIONAL DESCRIPTION
7.1 Standard SPI Instructions
The FM25Q16B features a serial peripheral interface on four signals: Serial Clock (CLK). Chip
Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions use the
DI input pin to serially write instructions, addresses or data to the device on the rising edge of CLK.
The DO output pin is used to read data or status from the device on the falling edge of CLK.
SPI bus operation Modes 0 (0, 0) and 3 (1, 1) are supported. The primary difference between
Mode 0 and Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in
standby and data is not being transferred to the Serial Flash. For Mode 0 the CLK signal is
normally low on the falling and rising edges of /CS. For Mode 3 the CLK signal is normally high on
the falling and rising edges of /CS.
7.2 Dual SPI Instructions
The FM25Q16B supports Dual SPI operation when using the “Fast Read Dual I/O” (BB hex)
instruction. This instruction allows data to be transferred to or from the device at two times the rate
of the standard SPI. The Dual Read instruction is ideal for quickly downloading code to RAM upon
power-up (code-shadowing) or for executing non-speed-critical code directly from the SPI bus
(XIP). When using Dual SPI instructions the DI and DO pins become bidirectional I/0 pins; IO0 and
IO1.
7.3 Quad SPI Instructions
The FM25Q16B supports Quad SPI operation when using the “Fast Read Quad I/O” (EB hex). This
instruction allows data to be transferred to or from the device at four times the rate of the standard
SPI. The Quad Read instruction offers a significant improvement in continuous and random access
transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus (XIP).
When using Quad SPI instruction the DI and DO pins become bidirectional IO0 and IO1, and the
/WP and /HOLD pins become IO2 and IO3 respectively. Quad SPI instructions require the nonvolatile Quad Enable bit (QE) in Status Register-2 to be set.
7.4 Hold Function
The /HOLD pin is used to pause a serial sequence of the SPI flash memory without resetting the
clocking sequence. To enable the /HOLD mode, the /CS must be in low state. The /HOLD mode
effects on with the falling edge of the /HOLD signal with CLK being low. The HOLD mode ends on
the rising edge of /HOLD signal with CLK being low.
In other words, /HOLD mode can’t be entered unless CLK is low at the falling edge of the /HOLD
signal. And /HOLD mode can’t be exited unless CLK is low at the rising edge of the /HOLD signal.
See Figure.3 for HOLD condition waveform.
If /CS is driven high during a HOLD condition, it resets the internal logic of the device. As long as
/HOLD signal is low, the memory remains in the HOLD condition. To re-work communication with
the device, /HOLD must go high, and /CS must go low. See 12.11 for HOLD timing.
CLK
/HOLD
Active
Hold
Active
Hold
Active
Figure3. Hold condition waveform
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FM25Q16B
8. WRITE PROTECTION
To protect inadvertent writes by the possible noise, several means of protection are applied to the
Flash memory.
8.1 Write protect Features

While Power-on reset, all operations are disabled and no instruction is recognized.

An internal time delay of tPUW can protect the data against inadvertent changes while the
power supply is outside the operating specification. This includes the Write Enable, Page
program, Sector Erase, Block Erase, Chip Erase, Write Security Register and the Write Status
Register instructions.

For data changes, Write Enable instruction must be issued to set the Write Enable Latch
(WEL) bit to “0”. Power-up, Completion of Write Disable, Write Status Register, Page program,
Sector Erase, Block Erase and Chip Erase are subjected to this condition.

Using setting the Status Register protect (SRP) and Block protect (SEC, TB, BP2, BP1, and
BP0) bits a portion of memory can be configured as reading only called software protection.

Write Protect(/WP) pin can control to change the Status Register under hardware control.

The Deep Power Down mode provides extra software protection from unexpected data
changes as all instructions are ignored under this status except for Release Deep Powerdown instruction.

One time program(OTP) mode provide protection mode from program/erase operation
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FM25Q16B
9. STATUS REGISTER
The Read Status Register instruction can be used to provide status on the availability of the Flash
memory array, if the device is write enabled or disabled, the state of write protection and the Quad
SPI setting. The Write Status Register instruction can be used to configure the devices write
protection features and Quad SPI setting. Write access to the Status Register is controlled by in
some cases of the /WP pin.
S7
S6
S5
S4
S3
S2
S1
S0
SRP0
SEC
TB
BP2
BP1
BP0
WEL
BUSY
Status
Register
Protect 0
(NonVolatile)
Sector
Protect
(NonVolatile)
Top/Bott
om Write
Protect
(NonVolatile)
Block
Protect
(NonVolatile)
Block
Protect
(NonVolatile)
Block
Protect
(NonVolatile)
Write
Enable
Latch
Erase or
Write in
Progress
Figure 4a. Status Register-1
S15
S14
S13
S12
S11
S10
S9
S8
(R)
(R)
(R)
(R)
(R)
(R)
QE
SRP1
Reserved
Quad
Enable
(NonVolatile)
Status
Register
Protect 1
(NonVolatile)
Reserved
Reserved
Reserved
Reserved
Reserved
Figure 4b. Status Register-2
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FM25Q16B
9.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is
executing a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register
instruction. During this time the device will ignore further instruction except for the Read Status
Register and Erase Suspend instruction (see tW, tPP, tSE, tBE1, tBE2 and tCE in AC
Characteristics). When the program, erase or write status register instruction has completed, the
BUSY bit will be cleared to a 0 state indicating the device is ready for further instructions.
9.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after
executing a Write Enable instruction. The WEL status bit is cleared to a 0, When device is write
disabled. A write disable state occurs upon power-up or after any of the following instructions:
Write Disable, Page Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
9.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4,
S3, and S2) that provide write protection control and status. Block protect bits can be set using the
Write Status Register Instruction (see tW in AC characteristics). All none or a portion of the memory
array can be protected from Program and Erase instructions (see Status Register Memory
Protection table). The factory default setting for the Block Protection Bits is 0, none of the array
protected.
9.4 Top/Bottom Block protect (TB)
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from
the Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory
Protection table. The factory default setting is TB=0. The TB bit can be set with the Write Status
Register Instruction depending on the state of the SRP0, SRP1 and WEL bits.
9.5 Sector/Block Protect (SEC)
The non-volatile Sector protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect
4KB Sectors (SEC=1)or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array
as shown in the Status Register Memory protection table. The default setting is SEC=0.
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FM25Q16B
9.6 Status Register protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status
register (S8 and S7). The SRP bits control the method of write protection: software protection,
hardware protection, power supply lock-down or one time programmable (OTP) protection.
SRP1
SRP0
/WP
Status
Register
Description
0
0
X
Software
Protection
/WP pin no control. The register can be written to
after a Write Enable instruction, WEL=1. [Factory Default]
0
1
0
Hardware
Protected
When /WP pin is low the Status Register locked and can not
be written to.
0
1
1
Hardware
Unprotected
When /WP pin is high the Status register is unlocked and
can be written to after a Write Enable instruction, WEL=1
1
0
X
Power Supply
Lock-Down
Status Register is protected and can not be written to again
(1)
until the next power-down, power-up cycle .
1
1
X
One Time
Program
Status Register is permanently protected and can not be
written to.
Note:
1. When SRP1, SRP0=(1,0), a power-down, power-up cycle will change SRP1, SRP0 to(0,0) state.
9.7 Quad Enable (QE)
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows
Quad operation. When the QE bit is set to a 0 state (factory default) the /WP pin and /Hold are
enabled. When the QE pin is set to a 1 the Quad IO2 and IO3 pins are enabled.
WARNING : The QE bit should never be set to a 1 during standard SPI or Dual SPI operation
if the /WP or /HOLD pins are tied directly to the power supply or ground.
Rev.01 (Nov.16. 2011)
15
FM25Q16B
9.8 Status Register Memory Protection
STATUS REGISTER
(1)
FM25Q16B (16M-BIT) MEMORY PROTECTION
SEC
TB
BP2
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY
PROTION
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
31
1F0000h-1FFFFFh
64KB
Upper 1/32
0
0
0
1
0
30 and 31
1E0000h-1FFFFFh
128KB
Upper 1/16
0
0
0
1
1
28 thru 31
1C0000h-1FFFFFh
256KB
Upper 1/8
0
0
1
0
0
24 thru 31
180000h-1FFFFFh
512KB
Upper 1/4
0
0
1
0
1
16 thru 31
100000h-1FFFFFh
1MB
Upper 1/2
0
1
0
0
1
0
000000h-00FFFFh
64KB
Lower 1/32
0
1
0
1
0
0 and 1
000000h-01FFFFh
128KB
Lower 1/16
0
1
0
1
1
0 thru 3
000000h-03FFFFh
256KB
Lower 1/8
0
1
1
0
0
0 thru 7
000000h-07FFFFh
512KB
Lower 1/4
0
1
1
0
1
0 thru 15
000000h-0FFFFFh
1MB
Lower 1/2
X
X
1
1
X
0 thru 31
000000h-1FFFFFh
2MB
ALL
1
0
0
0
1
31
1FF000h-1FFFFFh
4KB
Top Block
1
0
0
1
0
31
1FE000h-1FFFFFh
8KB
Top Block
1
0
0
1
1
31
1FC000h-1FFFFFh
16KB
Top Block
1
0
1
0
X
31
1F8000h-1FFFFFh
32KB
Top Block
1
1
0
0
1
0
000000h-000FFFh
4KB
Bottom Block
1
1
0
1
0
0
000000h-001FFFh
8KB
Bottom Block
1
1
0
1
1
0
000000h-003FFFh
16KB
Bottom Block
1
1
1
0
X
0
000000h-007FFFh
32KB
Bottom Block
Note :
1. X = don’t care
Rev.01 (Nov.16. 2011)
16
FM25Q16B
10. INSTRUCTIONS
The instruction set of the FM25Q16B consists of fifteen basic instructions that are fully controlled
through the SPI bus (see Instruction Set table). Instructions are initiated with the falling edge of
Chip Select (/CS). The first byte of data clocked into the DI input provides the instruction code.
Data on the DI input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address
bytes, data bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are
completed with the rising edge of edge /CS. Clock relative timing diagrams for each instruction are
included in figures 5 through 30. All read instructions can be completed after any clocked bit.
However, all instructions that Write, Program or Erase must complete on a byte (/CS driven high
after a full 8-bit have been clocked) otherwise the instruction will be terminated. This feature further
protects the device from inadvertent writes. Additionally, while the memory is being programmed or
erased, or when the Status Register is being written, all instructions except for Read Register will
be ignored until the program or erase cycle has completed.
10.1 Manufacturer and Device Identification
ID code
Instruction
Manufacturer ID
Fidelix
F8h
90h, EFh, DFh, 9Fh
Device ID
FM25Q16B
14h
90h, EFh, DFh, ABh
Memory Type ID
SPI
32h
9Fh
Capacity Type ID
16M
15h
9Fh
Rev.01 (Nov.16. 2011)
17
FM25Q16B
10.2 Instruction Set Table 1(1)
INSTRUCTION
NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
Write Enable
06h
Write Disable
04h
Read Status Register-1
05h
Read Status Register-2
35h
(SR15- SR8)(2)
Write Status Register
01h
(SR7-SR0)
(SR15-SR8)
Page Program
02h
A23-A16
A15-A8
A7-A0
(D7-D0)
Quad Data Input
(3)
Page Program
32h
A23-A16
A15-A8
A7-A0
(D7-D0, …) (3)
Quad Page Program
38h
A23-A0,
(D7-D0)
A15-A8
A7-A0
(D7-D0, …) (3)
Block Erase (64KB)
D8h
A23-A16
A15-A8
A7-A0
Block Erase (32KB)
52h
A23-A16
A15-A8
A7-A0
Sector Erase (4KB)
20h
A23-A16
A15-A8
A7-A0
Chip Erase
(SR7-SR0)
BYTE 6
(2)
C7h/60h
Erase Suspend
75h
Erase Resume
7Ah
Deep Power-down
B9h
Mode Bit Reset(4)
FFh
Release Deep Powerdown/ Device ID
ABh
dummy
dummy
dummy
(ID7-ID0) (5)
Read Manufacturer/
Device ID(6)
90h
dummy
dummy
00h or 01h
(M7-M0)
Read Dual Manufacturer/
Device ID(6)
EFh
dummy
dummy
00h or 01h
(M7-M0)
(ID7-ID0)
Read Quad Manufacturer/
Device ID(6)
DFh
dummy
dummy
00h or 01h
(M7-M0…)
(ID7-ID0…)
Write Security Register
2Fh
Read Security Register
2Bh
Enter Secured OTP
B1h
Exit Secured OTP
C1h
Read JEDEC ID
9Fh
(ID7-ID0)
Memory Type
(ID7-ID0)
Capacity
(ID7-ID0)
(SC7-SC0) (7)
(M7-M0)
Manufacturer
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FM25Q16B
Notes:
1.
2.
3.
4.
5.
6.
7.
Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis
“()” indicate data being read from the device on the IO pin.
SR = status register,
The Status Register contents will repeat continuously until /CS terminates the instruction.
Quad Data Input Page Program Input Data
IO0 = (D4, D0 …)
IO1 = (D5, D1 …)
IO2 = (D6, D2 …)
IO3 = (D7, D3 …)
This instruction is recommended when using the Dual or Quad Mode bit feature. See
section 10.25 for more information.
The Device ID will repeat continuously until /CS terminates the instruction.
See Manufacturer and Device Identification table for Device ID information.
SC = security register
10.3 Instruction Set Table 2 (Read Instructions)
INSTRUCTION
NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
Read Data
03h
A23-A16
A15-A8
A7-A0
(D7-D0)
Fast Read Data
0Bh
A23-A16
A15-A8
A7-A0
dummy
Fast Read Dual I/O
BBh
A23-A8(2)
A7-A0, M7-M0(2)
(D7-D0, …)(1)
Fast Read Quad I/O
EBh
A23-A0, M7-M0(4)
(x,x,x,x, D7-D0,…)(5)
(D7-D0, …)(3)
BYTE 6
(D7-D0)
Notes:
1: Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2: Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3, M1
3: Quad Output Data
IO0 = (D4, D0…)
IO1 = (D5, D1…)
IO2 = (D6, D2…)
IO3 = (D7, D3…)
4: Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5: Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0…)
IO1 = (x, x, x, x, D5, D1…)
IO2 = (x, x, x, x, D6, D2…)
IO3 = (x, x, x, x, D7, D3…)
Rev.01 (Nov.16. 2011)
19
FM25Q16B
10.4 Write Enable (06h)
Write Enable instruction is for setting the Write Enable Latch (WEL) bit in the Status Register. The
WEL bit must be set prior to every Program, Erase and Write Status Register instruction. To enter
the Write Enable instruction, /CS goes low prior to the instruction “06h” into Data Input (DI) pin on
the rising edge of CLK, and then driving /CS high.
/CS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
Instruction
06h
DI
High - Z
DO
Figure 5. Write Enable Instruction Sequence Diagram
10.5 Write Disable (04h)
The Write Disable instruction is to reset the Write Enable Latch (WEL) bit in the Status Register.
The Write Disable instruction is entered by driving /CS low, sending the instruction code “04h” into
the DI pin and then driving /CS high. WEL bit is automatically reset write-disable status of “0” after
Power-up and upon completion of the every Program, Erase and Write Status Register instructions.
/CS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
DI
DO
Instruction
04h
High - Z
Figure 6. Write Disable Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
20
FM25Q16B
10.6 Read Status Register-1 (05h) and Read Status Register-2 (35h)
The Read Status Register instructions are to read the Status Register. The Read Status Register
can be read at any time (every Program, Erase, Write Status Register and Write Security Register
cycle is in progress). It is recommended to check the BUSY bit before sending a new instruction
when a Program, Erase, Write Status Register or Write Status Register operation is in progress.
The instruction is entered by driving /CS low and sending the instruction code “05h” for Status
Register-1 or “35h” for Status Register-2 into the DI pin on the rising edge of CLK. The status
register bits are then shifted out on the DO pin at the falling edge of CLK with most significant bit
(MSB) first as shown in (figure 7). The Status Register bits are shown in figure 4a and 4b include
the BUSY, WEL, BP2-BP0, TB, SEC, SRP0, SRP1 and QE bits (see description of the Status
Register earlier in this datasheet).
The Status Register can be read continuously, as shown in (Figure 7). The instruction is completed
by driving /CS high.

/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
20
19
21
22
23
Mode 0
Instruction
05h or 35h
Status Register 1 or 2 Out
DO
High - Z
7
MSB
6
5
4
3
2
Status Register 1 or 2 Out
1
0
7
6
5
4
3
2
1
0
MSB
   
DI

CLK
Figure 7. Read Status Register Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
21
FM25Q16B
10.7 Write Status Register (01h)
The Write Status Register instruction is for changing the values of Status Register Bits. A Write
Enable instruction must previously have been issued prior to setting Write Status Register
Instruction (Status Register bit WEL must equal 1). Once write is enabled, the instruction is entered
by driving /CS low, sending the instruction code “01h”, and then writing the status register data byte
or word as illustrated in figure 8. The Status Register bits are shown in figure 4 and described
earlier in this datasheet.
Only non-volatile Status Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7, 5, 4, 3, 2 of Status
Register-1) and QE, SRP1 (bits 9 and 8 of Status Register-2) can be written to. All other Status
Register bit locations are read-only and will not be affected by the Write Status Register instruction.
The /CS pin must be driven high after the eighth or sixteenth bit of data that is clocked in. If this is
not done the Write Status Register instruction will not be executed. If /CS is driven high after the
eighth clock, the QE and SRP1 bits will be cleared to 0. After /CS is driven high, the self-timed
Write Status Register cycle will commence for a time duration of tw (See AC Characteristics). While
the Write Status Register cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register
cycle and a 0 when the cycle is finished and ready to accept other instructions again. After the
Write Status Register cycle has finished, The Write Enable Latch (WEL) bit in Status Register will
be cleared to 0.
The Write Status Register instruction can change the value of Block Protect bits (SEC, TB, BP2,
BP1 and BP0) to define the protected area of memory from erase and program instructions.
Protected areas become read-only (see Status Register Memory Protection table and description).
The Write Status Register instruction also allows the Status Register Protect bits (SRP0, SRP1) to
be set. Those bits are used in conjunction with the Write protect (/WP) pin, Lock out or OTP
features to disable writes to the status register. Please refer to 9 for detailed descriptions Status
Register protection methods. Factory default all Status Register bits are 0.
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
20
19
21
22
23
CLK
Mode 0
DI
Instruction
01h
Status Register 1 In
7
MSB
DO
6
5
4
3
2
Status Register 2 In
1
0
15
14
13
12
11
10
9
8
MSB
High - Z
Figure 8. Write Status Register Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
22
FM25Q16B
10.8 Read Data (03h)
The Read Data instruction is to read data out from the device. The instruction is initiated by driving
the /CS pin low and then sending the instruction code “03h” with following a 24-bit address (A23A0) into the DI pin. The code and address bits are latched on the rising edge of the CLK pin. After
the address is received, the data byte of the addressed memory location will be shifted out on the
DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as
long as the clock continues. The instruction is completed by driving /CS high. The Read Data
instruction sequence is shown in (figure 9). If a Read Data instruction is issued while an Erase,
Program or Write Status Register cycle is in process (BUSY=1) the instruction is ignored and will
not have any effects on the current cycle. The Read Data instruction allows clock rates from D.C to
a maximum of fR (see AC Electrical Characteristics).

/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
32
33
34
36
35
37
38
39
Mode 0
Instruction
24 Bit Address
03h
23
22
21
3
2
1
0
MSB
High - Z
DO
Data Out
7
6
5
4
3
2
1
0
MSB
  
DI

CLK
7
Figure 9. Read Data Register Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
23
FM25Q16B
10.9 Fast Read (0Bh)
The Fast Read instruction is high speed reading mode. The address is latched on the rising edge
of the CLK. After the 24-bit address, this is accomplished by adding eight “dummy” clocks as
shown in (figure 10). The dummy clocks means the internal circuits require time to set up the initial
address. During the dummy clocks, the data value on the DO pin is a “don’t care”. Data of each bit
shifts out on the falling edge of CLK.
/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
28
29
30
31
CLK
Mode 0
Instruction
24 Bit Address
0Bh
DI
23
22
21
3
2
1
0
44
45
46
47
MSB
High - Z
DO

/CS
32
33
7
6
34
35
36
37
38
39
40
41
42
43
48
49
50
53
52
51
54
55

CLK
Dummy Byte
5
4
3
2
1
0
Data Out 1
DO
High - Z
7
MSB
6
5
4
3
Data Out 2
2
1
0
7
6
5
4
3
2
1
0
MSB
  
DI
7
Figure 10. Fast Read Register Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
24
FM25Q16B
10.10 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O instruction reduce cycle overhead through double access using two IO
pins, IO0 and IO1.
“Continuous read mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
Mode bits (M7-0) after the input Address bits (A23-0), as shown in (figure 11a). The upper nibble of
the Mode (M7-4) controls the length of the next Fast Read Dual I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the Mode (M3-0)
are don’t care (“X”), However, the IO pins should be high-impedance prior to the falling edge of the
first data out clock.
If the Mode bits (M7-0) equal “Ax” hex, then the next Fast Dual I/O instruction (after /CS is raised
and then lowered) does not require the BBh instruction code, as shown in (figure 11b). This
reduces the instruction sequence by eight clocks and allows the address to be immediately
entered after /CS is asserted low. If Mode bits (M7-0) are any value other “Ax” hex, the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus
returning to normal operation. A Mode Bit Reset instruction can be used to reset Mode Bits (M7-0)
before issuing normal instructions.
/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
11
12
13
14
15
17
16
18
19
20
21
22
23
CLK
Mode 0
Instruction
24 Bit Address
22
BBh
DI
High - Z
23
DO
20
18
16
14
12
10
8
6
4
2
0
6
21
19
17
15
13
11
9
7
5
3
1
7
A15 - 8
A23 - 16
A7 - 0
5
High - Z
High - Z
M7 - 0

/CS
4
24
25
26
27
28
29
30
31
32
33
34
35
37
36
38
39

CLK
DI Switches from Input to Output
DO
6
4
2
0
7
5
3
1
6
4
2
0
7
5
3
1
MSB
MSB
Data Out 1
6
4
2
0
7
5
3
1
Data Out 2
6
4
2
0
6
7
5
3
1
7
MSB
MSB
Data Out 3
 
DI
Data Out 4
Figure 11a Fast Read Dual I/O Instruction (initial instruction or previous M7-0≠ Axh)
Rev.01 (Nov.16. 2011)
25
FM25Q16B
/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
11
12
13
14
15
CLK
Mode 0
24 Bit Address
DI
22
20
18
16
14
12
10
8
6
4
2
0
6
4
DO
23
21
19
17
15
13
11
9
7
5
3
1
7
5
A15 - 8
A23 - 16
A7 - 0
High - Z
High - Z
M7 - 0

/CS
16
17
18
19
20
21
22
23
24
25
26
27
29
28
30
31

CLK
DI Switches from Input to Output
DO
6
4
2
0
7
5
3
1
6
4
2
0
7
5
3
1
MSB
MSB
Data Out 1
6
4
2
0
7
5
3
1
Data Out 2
6
4
2
0
6
7
5
3
1
7
MSB
MSB
Data Out 3
 
DI
Data Out 4
Figure 11b. Fast Read Dual I/O Instruction (previous M7-0= Axh)
Rev.01 (Nov.16. 2011)
26
FM25Q16B
10.11 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O instruction is similar to the Fast Read Dual I/O instruction but with the
capability to input the 24 bit address, mode bits through four pins IO0, IO1, IO2, and IO3 and four
Dummy clock are required prior to the data output. The Quad I/O drastically eliminate instruction
cycle and makes faster random access for code executing (XIP) directly from the Quad SPI. The
Quad Enable bit (QE) of Status Register-2 must be set to enable the Fast read Quad I/O
Instruction.
“Continuous read mode”
The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the
Mode bits (M7-0) with following the input Address bits (A23-0), as shown in (figure 12a). The upper
nibble of the Mode (M7-4) controls the length of the next Fast Read Quad I/O instruction through
the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the Mode (M3-0)
are don’t care (“X”). However, the IO pins should be high-impedance prior to the falling edge of the
first data out clock.
If the Mode bits (M7-0) equal “Ax” hex, then the next Fast Read Quad I/O instruction (after /CS is
raised and then lowered) does not require the EBh instruction code, as shown in (figure 12b). This
reduces the instruction sequence by eight clocks and allows the address to be immediately
entered after /CS is asserted low. If the Mode bits (M7-0) are any value other than “Ax” hex, the
next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus
retuning normal operation. A Mode Bit Reset can be used to reset Mode Bits (M7-0) before issuing
normal instructions.

/CS
Mode 3
0
1
2
4
3
5
6
7
8
9
11
10
12
13
14
15
16
17
18
19
20
21
22
23

CLK
Mode 0
Instruction
EBh
High - Z
IO1
High - Z
IO2
High - Z
IO3
IOS Switches from
Input to Output
Dummy
20
16
12
8
4
0
4
0
4
0
4
0
21
17
13
9
5
1
5
1
5
1
5
1
22
18
14
10
6
2
6
2
6
2
6
2
23
19
15
11
7
3
7
3
7
3
7
A23 - 16
A15 - 8
A7 - 0
3
Data
Out 2
Data
Out 1
M7 - 0
     
IO0
24 Bit Address
4
5
6
7
Figure 12a. Fast Read Quad I/O Instruction (Initial instruction or previous M7-0 ≠ Axh)

/CS
Mode 3
1
0
2
4
3
5
6
7
8
9
10
11
12
13
14
15
Mode 0
24 Bit Address
IOS Switches from
Input to Output
Dummy
IO0
20
16
12
8
4
0
4
0
4
0
4
0
IO1
21
17
13
9
5
1
5
1
5
1
5
1
IO2
22
18
14
10
6
2
6
2
6
2
6
2
IO3
23
19
15
11
7
3
7
3
7
3
7
A23 - 16
A15 - 8
A7 - 0
M7 - 0
Data
Out 1
3
Data
Out 2
      
CLK
4
5
6
7
Figure 12b. Fast Read Quad I/O Instruction (previous M7-0 = Axh)
Rev.01 (Nov.16. 2011)
27
FM25Q16B
10.12 Page Program (02h)
The Page Program instruction is for programming the memory to be “0”. A Write Enable instruction
must be issued before the device accept the Page Program Instruction (Status Register bit WEL=
1). After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable
Latch (WEL). The instruction is entered by driving the /CS pin low and then sending the instruction
code “02h” with following a 24-bits address (A23-A0) and at least one data byte, into the DI pin.
The /CS pin must be driven low for the entire time of the instruction while data is being sent to the
device. (Please refer to figure 13).
If the entire 256 data bytes are going to be programmed, A7-A0 (the eight least significant address
bits) should be set to 0. If more than 256 bytes are sent the device, previously latched data are
discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same
page. If less than 256 data bytes are sent to device, they are correctly programmed at the
requested addresses without having any effects on the other bytes of the same page.
The /CS pin must go high once the eighth bit of the last byte has been latched in, otherwise the
Page Program instruction is not executed. Once /CS is driven high, the self-timed Page Program
instruction will initiated for a duration of tPP (See AC Characteristics). While the Page Program
cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Page Program cycle and becomes a 0 when
the cycle is finished and the device is ready to accept other instructions again. After the Page
Program cycle has finished and Write Enable Latch (WEL) bit in the Status Register is cleared to 0.
The Page Program instruction applied to a page which is protected by the Block Protect (SEC, TB,
BP2, BP1, and BP0) bits is not executed.
/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
28
29
30
31
33
32
35
34
36
37
38
39
CLK
Instruction
24 Bit Address
23
22
21
3
Data Byte 1
2
1
0
MSB
46
47
48
49
50
51
52
53
54
55
2079
45
2078
44
0
1
2077
43

CLK
2075
42
2
3
2076
41
2072

40
4
5
MSB
/CS
Data Byte 2
7
MSB
6
5
4
3
Data Byte 256
Data Byte 3
2
1
0
7
MSB
6
5
4
3
2
1
0

DI
6
7
2074
02h
DI
2073
Mode 0
7
6
5
4
3
2
1
0
MSB
Figure 13. Page Program Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
28
FM25Q16B
10.13 Quad Data Input Page Program (32h)
The Quad Data Input Page Program instruction is to program the memory as being “0” at
previously erased (FFh) memory areas. The Quad Data Input Page Program takes four pins: IO0,
IO1, IO2 and IO3 as and data input, which can improve programmer performance and the
effectiveness of application of lower clock less than 5MHz. System using faster clock speed will not
get more benefit for the Quad Data Input Page Program as the required internal page program
time is far more than the time data clock-in.
To use Quad Data Input Page Program the Quad Enable in Status Register-2 must be set (QE=1),
A Write Enable instruction must be executed before the device will accept the Quad Data Input
Page Program instruction (Status Register-1, WEL=1). The instruction is initiated by driving the /CS
pin low and then sending the instruction code “32h” with following a 24-bit address (A23-A0) and at
least one data, into the IO pins. The /CS pin must be held low for the entire length of the instruction
while data is being sent to the device. All other functions of Quad Data Input Page Program are
perfectly same as standard Page Program. (Please refer to figure 14).
/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
28
29
30
31
32
33
34
35
CLK
Mode 0
Instruction
IO0
24 Bit Address
32h
23
IO1
22
21
3
2
1
0
High - Z
IO2
High - Z
IO3
4
0
4
0
5
1
5
1
6
2
6
2
3
7
3
MSB
High - Z
7
Data
Byte 1
44
45
543
43
542
42
541
41
40
540
39
539
38
538
37
536
36

CLK
537

/CS
Data
Byte 2
0
4
0
4
0
4
0
IO1
5
1
5
1
5
1
5
1
5
1
IO2
6
2
6
2
6
2
6
2
6
2
IO3
7
3
7
3
7
3
7
3
7
3
Data
Byte 3
Data
Byte 4
Data
Byte 5
Data
Byte 6
Data
Byte 7
4
0
4
0
4
0
4
0
5
1
5
1
5
1
5
1
6
2
6
2
6
2
6
2

4

0

4

IO0
7
3
7
3
7
3
7
3
Data
Byte 253
Data
Byte 254
Data
Byte 255
Data
Byte 256
Figure 14. Quad Data Input Page Program Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
29
FM25Q16B
10.14 Quad Data Page Program (38h)
The Quad Data Input Page Program instruction is to program the memory as being “0” at
previously erased (FFh) memory areas. The Quad Data Input Page Program takes four pins: IO0,
IO1, IO2 and IO3 as address and data input, which can improve programmer performance and the
effectiveness of application of lower clock less than 5MHz. System using faster clock speed will not
get more benefit for the Quad Data Input Page Program as the required internal page program
time is far more than the time data clock-in.
To use Quad Data Input Page Program, the Quad Enable bit in Status Register-2 must be set
(QE=1), A Write Enable instruction must be executed before the device will accept the Quad Data
Input Page Program instruction (Status Register-1, WEL=1). The instruction is initiated by driving
the /CS pin low then sending the instruction code “38h” with follwinga 24-bit address (A23-A0) and
at least one data, into the IO pins. The /CS pin must be held low for the entire length of the
instruction while data is being sent to the device. All other functions of Quad Page Program are
perfectly same as standard Page Program. (Please refer to figure 15).
/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
12
11
13
14
15
16
17
18
19
CLK
Mode 0
Instruction
IO0
24 Bit Address
38h
High - Z
IO1
High - Z
IO2
High - Z
IO3
20
16
12
8
4
0
4
0
4
0
4
0
21
17
13
9
5
1
5
1
5
1
5
1
22
18
14
10
6
2
6
2
6
2
6
2
23
19
15
11
7
3
7
3
7
3
7
3
Data
Byte 1
MSB
Data
Byte 3
28
29
525
27
524
26
523
25
24
522
23
521
22
520
21
518
20

CLK
519

/CS
Data
Byte 2
0
4
0
4
0
4
0
IO1
5
1
5
1
5
1
5
1
5
1
IO2
6
2
6
2
6
2
6
2
6
2
IO3
7
3
7
3
7
3
7
3
7
3
Data
Byte 4
Data
Byte 5
Data
Byte 6
Data
Byte 7
Data
Byte 8
4
0
4
0
4
0
4
0
5
1
5
1
5
1
5
1
6
2
6
2
6
2
6
2

4

0

4

IO0
7
3
7
3
7
3
7
3
Data
Byte 253
Data
Byte 254
Data
Byte 255
Data
Byte 256
Figure 15. Quad Page Program Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
30
FM25Q16B
10.15 Sector Erase (20h)
The Sector Erase instruction is to erase the data of the selected sector as being “1”. The
instruction is used for an 4K-byte sector. Prior to the Sector Erase Instruction, a Write Enable
instruction must be issued. (Status Register bit WEL must be equal to 1). The instruction is initiated
by driving the /CS pin low and shifting the instruction code “20h” followed a 24-bit sector address
(A23-A0). (Please refer to figure 16).
The /CS pin must go high once the eighth bit of the last byte has been latched in, oherwise the
Sector Erase instruction will not be executed. After /CS goes high, the self-timed Sector Erase
instruction will initiated for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be read the status of the BUSY
bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is finished
and the device is ready to accept other instructions again. After the Sector Erase cycle has finished
the Write Enable Latch (WEL) bit in Status Register is cleared to 0. The Sector Erase instruction
applied to addressed page which is protected by the Block Protect (SEC, TB, BP2, BP1, and BP0)
bits is not executed. (See Status Register Memory protection table).
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
CLK
Mode 0
DI
Instruction
24 Bit Address
20h
23
22
21
3
2
1
0
MSB
High - Z
DO
Figure 16. Sector Erase Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
31
FM25Q16B
10.16 32KB Block Erase (52h)
The Block Erase instruction is to erase the data of the selected block as being “1”. The instruction
is used for an 32K-byte Block erase operation. Prior to the Block Erase Instruction, a Write Enable
instruction must be issued. (Status Register bit WEL must equal 1). The instruction is initiated by
driving the /CS pin low and shifting the instruction code “52h” followed a 24-bit block address (A23A0). (Please refer to figure 17).
The /CS pin must go high once the eighth bit of the last byte has been latched in, otherwise the
Block Erase instruction will not be issued. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block
Erase cycle is in progress, the Read Status Register instruction may still be read the status of the
BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again.
After the Sector Erase cycle has finished the Write Enable Latch (WEL) bit in Status Register is
cleared to 0.The Block Erase instruction applied to addressed page which is protected by the Block
Protect (SEC, TB, BP2, BP1, and BP0) bits is not executed. (See Status Register Memory
Protection table).
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
CLK
Mode 0
DI
Instruction
24 Bit Address
52h
23
22
21
3
2
1
0
MSB
High - Z
DO
Figure 17. 32KB Block Erase Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
32
FM25Q16B
10.17 64KB Block Erase (D8h)
The Block Erase instruction is to erase the data of the selected block as being “1”. Prior to the
Block Erase Instruction, a Write Enable instruction must be issued. (Status Register bit WEL must
equal 1). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“D8h” followed a 24-bit block address (A23-A0). (Please refer to figure 18).
The /CS pin must go high once the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block
Erase instruction will commence for a time duration of tBE1 (See AC Characteristics). While the
Block Erase cycle is in progress, the Read Status Register instruction may still be accessed for
checking the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and
becomes a 0 when the cycle is finished and the device is ready to accept other instructions again.
After the Block Erase cycle has finished the Write Enable Latch (WEL) bit in the Status Register is
cleared to 0. The Block Erase instruction applied to addressed page which is protected by the
Block Protect (SEC, TB, BP2, BP1, and BP0) bits is not executed. (see Status Register Memory
Protection table).
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
28
29
30
31
CLK
Mode 0
DI
Instruction
24 Bit Address
D8h
23
22
21
3
2
1
0
MSB
High - Z
DO
Figure 18. 64KB Block Erase Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
33
FM25Q16B
10.18 Chip Erase (C7h / 60h)
The entire memory array can be erased in a single operation by using the Chip Erase command.
The Chip-Erase instruction clears all bits in the device to be FFh (all 1s). A Chip-Erase instruction
will be ignored if any of the memory area is protected. Prior to any Write operation, the WriteEnable (WREN) instruction must be executed. The instruction is initiated by driving the /CS pin low
and shifting the instruction code “C7h” or “60h”. (Please refer to figure 19).
The /CS pin must be forced high after the eighth bit has been latched in. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase
instruction will commence for a duration of tCE (See AC Characteristics). While the Chip Erase
cycle is in progress, the Read Status Register instruction may still be accessed to check the status
of the BUSY bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when the cycle
is finished and the device is ready to accept other instructions again. After the Chip Erase cycle
has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Chip
Erase instruction applied to a page which is protected by the Block Protect (SEC, TB, BP2, BP1,
and BP0) bits is not executed. (See Status Register Memory Protection table).
/CS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
DI
DO
Instruction
C7h or 60h
High - Z
Figure 19. Chip Erase Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
34
FM25Q16B
10.19 Erase / Program Suspend (75h)
The Erase/Program Suspend instruction allows the system to interrupt a Sector Erase, Block
Erase operation or a Page Program, Quad Data Input Page Program, Quad Page Program
operation.
Erase Suspend is valid only during the Sector or Block erase operation. The Write Status Register1(01h) instruction and Erase instructions (20h, 52h, D8h, C7h, 60h) are not allowed during Erase
Suspend. During the Chip Erase operation, the Erase Suspend instruction is ignored.
Program Suspend is valid only during the Page Program, Quad Data Input Page Program or Quad
Page Program operation. The Write Status Register-1(01h) instruction and Program instructions
(02h, 32h and 33h) are not allowed during Program Suspend.
The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in
the Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a
Page Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the
Suspend instruction will be ignored by the device. A maximum of time of “tSUS” (See AC
Characteristics) is required to suspend the erase or program operation. After Erase/ Program
Suspend, the SUS bit in the Status Register will be set from 0 to 1 immediately and The BUSY bit
in the Status Register will be cleared from 1 to 0 within “tSUS”. For a previously resumed
Erase/Program operation, it is also required that the Suspend instruction “75h” is not issued earlier
than a minimum of time of “tSUS” following the preceding Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state will reset the device and release
the suspend state. SUS bit in the Status Register will also reset to 0. The data within the page,
sector or block that was being suspended may become corrupted. It is recommended for the user
to implement system design techniques against the accidental power interruption and preserve
data integrity during erase/program suspend state. (Please refer to figure 20).
/CS
tSUS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
DI
DO
Instruction
75h
High - Z
Accept Read or Program
Instruction
Figure 20. Erase/ Program Suspend instruction (SPI Mode)
Rev.01 (Nov.16. 2011)
35
FM25Q16B
10.20 Erase / Program Resume (7Ah)
The Erase/ Program Resume instruction “7Ah” is to re-work the Sector or Block Erase operation or
the Page Program operation upon an Erase/ Program Suspend. The Resume instruction “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY
bit equals to 0. After issued, the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will
be set from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the
page will complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1,
the Resume instruction “7Ah” will be ignored by the device.
Resume instruction cannot be accepted if the previous Erase/Program Suspend operation was
interrupted by unexpected power off. It is also required that a subsequent Erase/Program Suspend
instruction not to be issued within a minimum of time of “tSUS” following a previous Resume
instruction. (Please refer to figure 21).
/CS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
DI
Instruction
7Ah
Resume previously Suspended
Program or Erase
Figure 21. Erase / Program Resume instruction (SPI Mode)
Rev.01 (Nov.16. 2011)
36
FM25Q16B
10.21 Deep Power-down (B9h)
Executing the Deep Power-down instruction is the best way to put the device in the lowest power
consumption. The Deep Power-down instruction reduces the standby current (from ICC1 to ICC2,
as specified in AC characteristics). The instruction is entered by driving the /CS pin low with
following the instruction code “B9h”. (Please refer to figure 22).
The /CS pin must go high once the eighth bit of the instruction code has been latched in, otherwise
the Deep Power-down instruction is not executed. After /CS is driven high, it requires a delay of
tDP and the Deep power down mode is entered. While in the Release Deep Power-down /Device
ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored including the Read Status Register instruction, which is always available
during normal operation. Deep Power-Down Mode automatically stops at Power-Down, and the
device always Power-up in the Standby Mode.
/CS
tDP
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
DI
Instruction
B9h
Stand-by Current
Power-down Current
Figure 22. Deep Pwer-down Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
37
FM25Q16B
10.22 Release Deep Power-down / Device ID (ABh)
The Release from Deep Power-down / Device ID instruction is a multi-purpose instruction. It can
be used to release the device from the Deep Power-down state or obtain the device electronic
identification (ID) number.
To release the device from the Deep Power-down state, the instruction is issued by driving the /CS
pin low, sending the instruction code “ABh” and driving /CS high as shown in figure 23a. Release
from Deep Power-down require the time duration of tRES1 (See AC Characteristics) for re-work a
normal operation and accepting other instructions. The /CS pin must keep high during the tRES1
time duration.
When used only to obtain the Device ID while not in the Deep Power-down state, instruction is
initiated by driving the /CS pin low and sending the instruction code “ABh” with follwing3-dummy
bytes. The Device ID bits are then shifted on the falling edge of CLK with most significant bit (MSB)
first as shown in figure 23b. The Device ID value for the FM25Q16B is listed in Manufacturer and
Device Identification table. The Device ID can be read continuously. The instruction is completed
by driving /CS high.
When used to release the device from the Deep Power-down state and obtain the Device ID, the
instruction is the same as previously described, and shown in figure 23b, except that after /CS is
driven high it must keep high for a time duration of tRES2 (See AC Characteristics). After this time
duration the device will resume normal operation and other instructions can be accepted. If the
Release from Deep Power-down /Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects
on the current cycle.
/CS
tRES1
1
0
Mode 3
2
4
3
5
6
7
CLK
Mode 0
Instruction
ABh
DI
Power-down Current
Stand-by Current
Figure 23a. Release Deep Power-down Instruction Sequence
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
Mode 0
Instruction
ABh
29
30
31
32
33
22
21
3
35
36
37
38
39
tRES2
2
1
0
MSB
High - Z
Device ID (14h)

DO
34
3 Dummy Bytes
23

DI
28

CLK
7
6
5
4
3
2
1
0
MSB
Power-down Current
Stand-by
Current
Figure 23b. Release Deep Power-down / Device ID Instruction Sequence Diagram
Rev.01 (Nov.16. 2011)
38
FM25Q16B
10.23 Read Manufacturer/ Device ID (90h), (EFh), (DFh)
The Read Manufacturer/ Device ID instruction is an alternative to the Release from Deep Powerdown / Device ID instruction that provides both the JEDEC assigned manufacturer ID and the
specific device ID.
The Read Manufacturer/ Device ID instruction is very similar to the Release from Deep Powerdown / Device ID instruction. The instruction is initiated by driving the /CS pin low and shifting the
instruction code “90h” with following a 24-bit address (A23-A0) of 000000h. The instruction code of
“EFh” is used for Dual I/O and the instruction code of “DFh” is used for Quad I/O with same
instruction sequence. After then, the Manufacturer ID for FIDELIX (F8h) and the Device ID are
shifted out on the falling edge of CLK with most significant bit(MSB) first as shown in figure 24a,
24b or 24c. The Device ID value for the FM25Q16B is listed in Manufacturer and Device
Identification table. If the 24-bit address is initially set to 000001h the Device ID will be read first
with following the Manufacturer ID. The Manufacturer and Device IDs can be read continuously,
alternating from one to the other. The instruction is completed by driving/CS high.
/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
28
29
30
31
CLK
Mode 0
24 Bit Address
000000h or 000001h
Instruction
90h
DI
23
22
21
3
2
1
0
MSB
High - Z
DO
/CS
32
33
34
35
36
37
38
39
40
41
42
43
45
44
46
47
CLK
DI
Manufacturer ID (F8h)
DO
7
MSB
6
5
4
3
2
Device ID (14h)
1
0
7
6
5
4
3
2
1
0
MSB
Figure 24a. Read Manufacturer/ Device ID Diagram
Rev.01 (Nov.16. 2011)
39
FM25Q16B

/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
12
13
14
15

CLK
Mode 0
Instruction
24 Bit Address

22
23
EFh
DI
21
3
2
1
0
36
37
38
39
High - Z
DO

/CS
24
25
26
27
28
29
30
31
32
33
34
35

CLK
DI Switches from Input to Output
DO
6
4
2
0
7
5
3
1
MSB
6
4
2
0
7
5
3
1
MSB
Manufacturer
ID (F8h)
6
4
2
0
7
5
3
1
Device ID
(14h)
6
4
2
0
6
7
5
3
1
7
MSB
MSB
Manufacturer
ID (F8h)
 
DI
Device ID
(14h)
Figure 24b. Read Dual Manufacturer/ Device ID Diagram

/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
12
13
14
15

CLK
Mode 0
Instruction
DFh
IO1
High - Z
IO2
High - Z
IO3
High - Z
24 Bit Address
23
22
21

IO0
3
2
1
0
/CS
20
21
22
23
24
25
26
27
CLK
IOs Switches from
Input to Output
IO0
4
0
4
0
4
0
4
0
IO1
5
1
5
1
5
1
5
1
IO2
6
2
6
2
6
2
6
2
7
3
7
3
7
3
7
3
IO3
Manufacturer
ID (F8h)
Device
ID (14h)
Manufacturer
ID (F8h)
Device
ID (14h)
Figure 24c. Read Quad Manufacturer/ Device ID Diagram
Rev.01 (Nov.16. 2011)
40
FM25Q16B
10.24 JEDEC ID (9Fh)
For compatibility reasons, the FM25Q16B provides several instructions to electronically determine
the identity of the device. The Read JEDEC ID instruction is congruous with the JEDEC standard
for SPI compatible serial flash memories that was adopted in 2003. The instruction is entered by
driving the /CS pin low with following the instruction code “9Fh”. JEDEC assigned Manufacturer ID
byte for FIDELIX (F8h) and two Device ID bytes, Memory Type(ID-15-ID8) and Capacity (ID7-ID0)
are then shifted out on the falling edge of CLK with most significant bit (MSB) first shown in figure
25. For memory type and capacity values refer to Manufacturer and Device Identification table. The
JEDEC ID can be read continuously. The instruction is terminated by driving/CS high.
/CS
1
0
Mode 3
2
4
3
5
6
7
8
9
10
12
11
13
14
15
CLK
Mode 0
Instruction
9Fh
DI
Manufacturer ID
High - Z
F8h
DO
/CS
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
CLK
DI
Memory Type ID15 - 8
DO
Capacity Type ID7 - 0
32h
15h
Figure 25. Read JEDEC ID
Rev.01 (Nov.16. 2011)
41
FM25Q16B
10.25 Mode Bit Reset (FFh)
To lessen the effect of instruction overhead, Mode Bit Reset (FFh) can be applied to. In Fast Read
Dual/Quad I/O operations, the BBh / EBh instruction is not required if the Mode Bits (M7-0) are set
“Ax” hex. (See 11.2.10 Fast Read Dual I/O and 11.2.11 Fast Read Quad I/O for detail descriptions).
If the system controller is reset during operation, the flash device will return to the standard SPI
operation. Upon Reset of main chip, SPI instruction like Read ID (9Fh) or Fast Read (0Bh) would
be sent from the system. FM25Q16B does not have a hardware reset pin like most of other SPI
memory. For this reason, FM25Q16B will be put in the unrecognized status for any standard SPI
instruction if Mode bits are set to “Ax” hex upon reset. To address this issue, it is recommended to
set a Mode bit Reset instruction “FFh” for the first instruction once a system reset. This instruction
can ensure the device to allow Standard SPI instruction to be accepted. (Please refer to figure 26).
/CS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
Instruction
IO0
FFh
IO1
Dont’care
IO2
Dont’care
IO3
Dont’care
Figure 26. Mode Bits Reset for Fast Read Dual/Quad I/O
Rev.01 (Nov.16. 2011)
42
FM25Q16B
10.26 Enter Secured OTP (B1h)
The Enter Secured OTP instruction is for entering the additional 4K-bit secured OTP mode. The
additional 4K-bit secured OTP is independent from main array, which may be used to store unique
serial number for system identifier. After entering the Secured OTP mode, and then follow standard
read or program, procedure to read out the data or update data. The Secured OTP data cannot be
updated again once it is lock-down
Please note that WRSR/WRSCUR commands are not acceptable during the access of secure
OTP region, once security OTP is lock down, only commands related with read are valid.
(Please refer to figure 27).
/CS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
Instruction
B1h
DI
Figure 27. Enter Secured OTP instruction sequence
10.27 Exit Secured OTP (C1h)
The Exit Secured OTP instruction is for exiting the additional 4K-bit secured OTP mode.
(Please refer to figure 28).
/CS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
DI
Instruction
C1h
Figure 28. Exit Secured OTP instruction sequence
Rev.01 (Nov.16. 2011)
43
FM25Q16B
10.28 Read Security Register (2Bh)
The Read Security Register instruction is for reading the value of Security Register bits. The Read
Security Register can be read at any time (even in program/erase/write status register condition)
and continuously.
The definition of the Security Register bits is as below:
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory
before ex-factory or not. When it is “0”, it indicates non-factory lock, “1” indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set
to “1” for customer lock-down purpose. However, once the bit it set to “1” (Lock-down), the LDSO
bit and the 4K-bit Secured OTP area cannot be updated any more. While it is in 4K-bit Secured
OTP mode, array access is not allowed to write.

/CS
Mode 3
1
0
2
4
3
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23

CLK
Mode 0
Instruction
   
2Bh
DI
Security Register Out
High - Z
DO
7
6
5
4
3
2
MSB
Security Register Out
1
0
7
6
5
4
3
2
1
0
MSB
Figure 29. Read Security Register instruction sequence
Security Register Definition
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
x
x
x
x
x
x
reserved
reserved
reserved
reserved
reserved
reserved
Volatile
bit
Volatile
bit
Volatile
bit
Volatile
bit
Volatile
bit
Volatile
bit
Bit1
LDSO
(indicate if
lock-down)
0 = not lockdown
1 = lockdown(cannot
program/erase
OTP)
Bit0
Secured
OTP
indicator bit
0 = non
factory lock
1 = factory
lock
NonVolatile bit
NonVolatile bit
Rev.01 (Nov.16. 2011)
44
FM25Q16B
10.29 Write Security Register (2Fh)
The Write Security Register instruction is to change the value of Security Register bits. Even it is
writing command, it does not require WREN instruction prior to writing WRSCUR instruction. The
WRSCUR instruction may change the value of bit1 (LDSO bit) for customer to lock-down the 4K-bit
Secured OTP area. If the LDSO bit is set to “1”, the Secured OTP area cannot be updated any
more.
To accept the instruction, /CS must keep high at the boundary.
/CS
Mode 3
0
1
2
3
4
5
6
7
CLK
Mode 0
DI
Instruction
2Fh
Figure 30. Write Security Register instruction sequence
Rev.01 (Nov.16. 2011)
45
FM25Q16B
11. 4K-bit Secured OTP
It’s for unique identifier to provide 4K-bit one-time-program area for setting device unique serial
number which may be set by factory or system customer. Please refer to table of “4K-bit secured
OTP definition”.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with ENSO
command) and going through normal program procedure, and then exiting 4K-bit secured OTP
mode by writing EXSO command
- Customer may lock-down bit1 as “1”. Please refer to “table of security register definition” for
security register bit definition and table of “4K-bit secured OTP definition” for address range
definition.
- Note. Once lock-down whatever by factory or customer, it cannot be changed any more. While
in 4K-bit secured OTP mode, array access is not allowed to write.
4K-bit secured OTP definition
Address range
Size
000000 ~ 00000F
128-bit
000010 ~ 0001FF
3968-bit
Standard
Factory Lock
ESN
(Electrical Serial Number)
N/A
Customer Lock
Determined by customer
Rev.01 (Nov.16. 2011)
46
FM25Q16B
12. ELECTRICAL CHARACTERISTICS
12.1 Absolute Maximum Ratings (1)
PARAMETERS
SYMBOL
Supply Voltage
VCC
Voltage Applied to Any Pin
VIO
Transient Voltage on any Pin
VIOT
CONDITIONS
RANGE
UNIT
-0.6 to +4.0
V
Relative to Ground
-0.6 to VCC +4.0
V
<20nS Transient
-2.0V to VCC +2.0V
V
˚C
Relative to Ground
Storage Temperature
TSTG
-65
Lead Temperature
TLEAD
See Note
˚C
Electrostatic Discharge
VESD
-2000 to +2000
V
(2)
Human
Voltage
to +150
Body Model
(3)
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation
outside of these levels is not guaranteed. Exposure to absolute maximum rating may affect
device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly
and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500ohms, R2=500 ohms).
12.2 Operating Ranges
SPEC
PARAMETER
SYMBOL
CONDITIONS
UNIT
MIN
MAX
Supply Voltage
VCC
FR =85㎒, fR = 50㎒,
2.7
3.6
V
Temperature,Operating
Tj
Industrial
-40
+85
˚C
MIN
MAX
UNIT
12.3 Endurance and Data Retention
PARAMETER
CONDITIONS
Erase/Program Cycles
4KB sector, 32/64KB block or full chip.
Data Retention
Full Temperature Range
100,000
Cycles
20
Rev.01 (Nov.16. 2011)
years
47
FM25Q16B
12.4 Power-up Timing and Write Inhibit Threshold
SPEC
PARAMETER
SYMBOL
UNIT
MIN
VCC(min) to /CS Low
tVSL
(1)
Time Delay Before Write Instruction
tPUW
Write Inhibit Threshold Voltage
VWI
MAX
㎲
10
(1)
(1)
1
10
㎳
1
2
V
Note:
1. These parameters are characterized only.
VCC
VCC(max)
Program. Erase and Write Instructions are Ignored
/CS Must Track VCC
VCC(min)
Reset
State
tVSL
Read Instructions
Allowed
Device is Fully
Accessible
VWI
tPUW
Time
Figure 31. Power-up Timing and Voltage Levels
Rev.01 (Nov.16. 2011)
48
FM25Q16B
12.5 DC Electrical Characteristics
SPEC
PARAMETER
SYMBOL
CONDITION
UNIT
MIN
Input Capacitance
(1)
CIN
VIN=0V
(1)
TYP
(2)
6
㎊
8
㎊
Output Capacitance
COUT
Input Leakage
ILI
±2
㎂
I/O Leakage
ILO
±2
㎂
10
50
㎂
1
5
㎂
4/5/6
6/7.5/9
㎃
6/7/8
9/10.5/12
㎃
7/8/9
10/12/13.5
㎃
10/11/12
15/16.5/18
㎃
Standby Current
VOUT=0V
(2)
MAX
/CS=VCC,
ICC1
VIN=GND or VCC
Deep Power-down
/CS=VCC,
ICC2
Current
VIN=GND or VCC
Current Read Data/
(2)
C=0.1 VCC / 0.9VCC
ICC3
Dual/Quad 1㎒
IO=Open
Current Read Data/
(2)
C=0.1 VCC / 0.9VCC
ICC3
Dual/Quad 33㎒
IO=Open
Current Read Data/
(2)
C=0.1 VCC / 0.9VCC
ICC3
Dual/Quad 50㎒
IO=Open
Current Read Data/
(2)
C=0.1 VCC / 0.9VCC
ICC3
Dual/Quad 85㎒
IO=Open
Current Write
ICC4
/CS=VCC
8
12
㎃
ICC5
/CS=VCC
20
25
㎃
ICC6
/CS=VCC
20
25
㎃
Current Chip Erase
ICC7
/CS=VCC
20
25
㎃
Input Low Voltages
VIL
-0.5
VCC x0.2
V
Input High Voltages
VIH
VCC x0.8
VCC +0.4
V
Output Low Voltages
VOL
IOL=1.6㎃
0.4
V
VOH
IOH=-100㎂
Status Register
Current page
Program
Current Sector/Block
Erase
Output
VCC -0.2
V
High Voltages
Notes:
1. Tested on sample basis and specified through design and characterization data, TA = 25˚C,
VCC = 3V.
2. Checked Board Pattern.
Rev.01 (Nov.16. 2011)
49
FM25Q16B
12.6 AC Measurement Conditions
SPEC
PARAMETER
SYMBOL
UNIT
MIN
Load Capacitance
Input Rise and Fall Times
MAX
CL
30
㎊
TR, TF
5
㎱
Input Pulse Voltages
VIN
0.2 VCC to O. 8 VCC
V
Input Timing Reference Voltages
IN
0.3 VCC to O. 7 VCC
V
OUT
0.5 VCC to O. 5 VCC
V
Output Timing Reference Voltages
Note:
1.
Output Hi-Z is defined as the point where data out is no longer driven.
Input Levels
Input and Output
Timing Reference Levels
0.8 VCC
0.5 VCC
0.2 VCC
Figure 32. AC Measurement I/O Waveform
Rev.01 (Nov.16. 2011)
50
FM25Q16B
12.7 AC Electrical Characteristics
SPEC
DESCRIPTION
SYMBOL
ALT
UNIT
MIN
TYP
MAX
Clock frequency
FR
fc
D.C.
85
㎒
FR
fc
D.C.
104
㎒
FR
D.C.
50
㎒
Clock High, Low Time for Read Data (03h)
tCRLH,
6
㎱
instructions
tCRLL
Clock Rise Time (Slew Rate)
tCLCH
(2)
0.1
V/㎱
(2)
0.1
V/㎱
7
㎱
5
㎱
For all instructions, except Read Data (03h)
2.7V-3.6V VCC & Industrial Temperature
Clock frequency
For all instructions, except Read Data (03h)
3.0V-3.6V VCC & Commercial Temperature
Clock freq. Read Data instrunction (03h)
Clock Fall Time (Slew Rate)
(1)
tCHCL
/CS Active Setup Time relative to CLK
tSLCH
tCSS
/CS Not Active Hold Time relative to CLK
tCHSL
Data In Setup Time
tDVCH
tDSU
4
㎱
Data In Hold Time
tCHDX
tDH
4
㎱
/CS Active Hold Time relative to CLK
tCHSH
7
㎱
/CS Not Active Setup Time relative to CLK
tSHCH
7
㎱
/CS Deselect Time (for Read instructions/ Write,
tSHSL
10/40
㎱
tCSH
Erase and Program instructions)
(2)
tDIS
7
㎱
tCLQV
tV
7/6
㎱
Output Hold Time
tCLQX
tHO
/Hold Active Setup Time relative to CLK
tHLCH
Output Disable Time
tSHQZ
Clock Low to Output Valid
2.7V-3.6V / 3.0V-3.6V
0
㎱
7
㎱
Rev.01 (Nov.16. 2011)
51
FM25Q16B
12.8 AC Electrical Characteristics (cont’d)
SPEC
DESCRIPTION
SYMBOL
ALT
UNIT
MIN
TYP
MAX
/HOLD Active Hold Time relative to CLK
tCHHH
5
㎱
/HOLD Not Active Setup Time relative to CLK
tHHCH
7
㎱
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
㎱
(2)
tLZ
7
㎱
(2)
tHZ
12
㎱
/HOLD to Output Low-Z
tHHQX
/HOLD to Output High-Z
tHLQZ
Write Protect Setup Time Before /CS Low
tWHSL
Write Protect Setup Time After /CS High
/CS High to Deep Power-down Mode
/CS High to Standby Mode without Electronic
(3)
20
㎱
(3)
100
㎱
tSHWL
(2)
3
㎲
tRES1
(2)
3
㎲
tRES2
(2)
1.8
㎲
20
㎲
tDP
Signature Read
/CS High to Standby Mode with Electronic
Signature Read
/CS High to next Instruction after Suspend
(2)
tSUS
Write Status Register Time
tw
10
15
㎳
Byte Program Time
tBP
10
150
㎲
Page Program Time
tPP
1.2
5
㎳
Sector Erase Time(4KB)
tSE
40
300
㎳
Block Erase Time(32KB)
tBE1
200
1000
㎳
Block Erase Time(64KB)
tBE2
300
1500
㎳
Chip Erase Time FM25Q16B
tCE
8
50
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fc.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is
set to 1.
4. Commercial temperature only applies to Fast Read (FR1 & FR2). Industrial temperature applies to
all other parameters.
Rev.01 (Nov.16. 2011)
52
FM25Q16B
12.9 Serial Output Timing
12.10 Input Timing
12.11 Hold Timing
Rev.01 (Nov.16. 2011)
53
FM25Q16B
13. PACKAGE SPECIFICATION
13.1 8-Pin SOIC 150-mil
MILLIMETERS
INCHES
SYMBOL
MIN
MAX
MIN
MAX
A
1.47
1.72
0.058
0.068
A1
0.10
0.24
0.004
0.009
A2
1.45
0.057
b
0.33
0.50
0.013
0.020
C
0.19
0.25
0.0075
0.098
4.8
4.95
0.189
0.195
5.8
6.19
0.228
0.244
3.8
4.00
0.150
0.157
(3)
D
E
E1
e
(3)
(2)
1.27BSC
0.050 BSC
L
0.40
1.27
0.015
0.050
θ
0˚
8˚
0˚
8˚
y
---
0.076
---
0.003
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the
bottom of the package.
Rev.01 (Nov.16. 2011)
54
FM25Q16B
13.2 8-Pin SOIC 208-mil
MILLIMETERS
INCHES
SYMBOL
MIN
MAX
MIN
MAX
A
1.75
2.16
0.069
0.085
A1
0.05
0.25
0.002
0.010
A2
1.70
1.91
0.067
0.075
b
0.35
0.48
0.014
0.019
C
0.19
0.25
0.007
0.010
D
5.18
5.38
0.204
0.212
E
7.70
8.10
0.303
0.319
E1
5.18
5.38
0.204
0.212
e
1.27 BSC
0.050 BSC
L
0.50
0.80
0.020
0.031
θ
0˚
8˚
0˚
8˚
y
---
0.10
---
0.004
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the
bottom of the package.
4. Formed leads shall be planar with respect to one another within. 0004 inches at the seating
plane.
Rev.01 (Nov.16. 2011)
55
FM25Q16B
13.3 8-Pin VSOP 208-mil
MILLIMETERS
INCHES
SYMBOL
MIN
TYP.
MAX
A
---
---
1.00
A1
0.05
0.10
A2
0.75
b
0.35
c
IN
TYP.
MAX
---
---
0.039
0.15
0.002
0.004
0.006
0.80
0.85
0.030
0.031
0.033
0.42
0.48
0.014
0.017
0.019
0.127 REF.
0.005 REF.
D
5.18
5.28
5.38
0.204
0.208
0.212
E
7.70
7.90
8.10
0.303
0.311
0.319
E1
5.18
5.28
5.38
0.204
0.208
0.212
e
---
1.27
---
---
0.050
---
L
0.50
0.65
0.80
0.020
0.026
0.031
y
---
---
0.10
---
---
0.004
θ
0˚
---
8˚
0˚
---
8˚
Notes:
1. JEDEC outline : N/A.
2. Dimension “D”, “D1” does not include mold flash, mold flash shall not exceed 0.006 [0.15mm]
per end. Dimension “E”, “E1” does not include inter lead flash. Inter lead flash shall not exceed
0.010 [0.25mm] per side.
3. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.003
[0.08mm].
Rev.01 (Nov.16. 2011)
56
FM25Q16B
13.4 8-Pin PDIP 300-mil
Dimension in inch
Dimension in min
SYMBOL
MIN
Nom
MAX
MIN
Nom
MAX
A
---
---
0.210
---
---
5.334
A1
0.015
---
---
0.381
---
---
A2
0.125
0.130
0.135
3.18
3.30
3.43
B
0.016
0.018
0.022
0.41
0.46
0.56
B1
0.058
0.060
0.064
1.47
1.52
1.63
c
0.008
0.010
0.014
0.20
0.25
0.36
D
0.360
0.365
0.370
9.14
9.27
9.40
E
0.290
0.300
0.310
7.37
7.62
7.87
E1
0.245
0.250
0.255
6.22
6.35
6.48
e1
0.090
0.100
0.110
2.29
2.54
2.79
L
0.120
0.130
0.140
3.05
3.30
3.56
α
0
---
15
0
---
15
eA
0.335
0. 55
0 375
8.51
9 02
9.53
S
---
---
0.045
---
---
1.14
Rev.01 (Nov.16. 2011)
57
FM25Q16B
13.5 8-contact 6x5 WSON
MILLIM
ERS
INCHES
SYMBOL
MIN
TYP.
MAX
MIN
TYP.
MAX
A
0.70
0.75
0.80
0.0276
0.0295
0.0315
A1
0.00
0.02
0.05
0.0000
0.0008
0.0019
A2
0.55
0.0126
A3
0.19
0.20
0.25
0.0075
0.0080
0.0098
b
0.36
0.40
0.48
0.0138
0.0157
0.0190
(3)
D
5.90
6.00
6.10
0.2320
0.2360
0.2400
D1
3.30
3.40
3.50
0.1299
0.1338
0.1377
E
4.90
5.00
5.10
0.1930
0.1970
0.2010
4.20
4.30
4.40
0.1653
0.1692
0.1732
E1
e
(3)
(2)
1.27 BSC
K
0.20
L
0.50
0.0500 BSC
0.0080
0.60
0.75
0.0197
0.0236
0.0295
Rev.01 (Nov.16. 2011)
58
FM25Q16B
13.6 8-contact 6x5 WSON Cont’d.
MILLIMETERS
INCHES
SYMBOL
MIN
TYP.
MAX
MIN
TYP.
MAX
SOLDER PATTERN
M
3.40
0.1338
N
4.30
0.1692
P
6.00
0.2360
Q
0.50
0.0196
R
0.75
0.0255
Notes:
1. Advanced Packaging Information; please contact Fidelix Co., Ltd. for the latest minimum and
maximum specifications.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom
of the package.
4. The metal pad area on the bottom center of the package is connected to the device ground (GND
pin). Avoid placement of exposed PCB bias under the pad.
Rev.01 (Nov.16. 2011)
59
FM25Q16B
13.7 16-Pin SOIC 300-mil
MILLIMETERS
INCHES
SYMBOL
MIN
MAX
MIN
MAX
A
2.36
2.64
0.093
0.104
A1
0.10
0.30
0.005
0.012
b
0.33
0.51
0.013
0.020
C
0.18
0.28
0.007
0.000
10.08
10.49
0.397
0.413
10.01
10.64
0.394
0.419
7.39
7.59
0.291
0.299
(3)
D
E
E1
e
(3)
(2)
1.27BSC
0.050
L
0.39
1.27
0.015
0.050
θ
0˚
8˚
0˚
8˚
y
---
0.076
---
0.003
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the
bottom of the package.
Rev.01 (Nov.16. 2011)
60
FM25Q16B
13.8 24Ball TFBGA
Rev.01 (Nov.16. 2011)
61
FM25Q16B
14. ORDERING INFORMATION
FM XXXXX X - X X X X X X
Fidelix
Memory
Packing Type
Product Family
T : Tube (Standard)
R : Tape and Reel
Y : Tray
* Package NO Marking
25 : SPI
Business Package Type
Organization
1 : 8 Pin 208 mil SOIC
S : Single
- 3.0V
2 : 16 Pin 300 mil SOIC
D : Dual
- 3.0V
3 : 8 Pin 300 mil PDIP
Q : Quad
- 3.0V
4 : 8 Contact 6x5 WSON
Y : Single
- 1.8V
5 : 8 Pin 150 mil SOIC
E : Dual
- 1.8V
6 : 8 Contact 8x6 WSON
M : Quad
- 1.8V
7 : 8 Pin VSOP
8 : 24 ball TFBGA
W : Wafer
Device Depth
04 : 4M
08 : 8M
16 : 16M
32 : 32M
64 : 64M
4A : 128M
Core / IO Voltage
A : 3.0V / 3.0V
B : 1.8V / 1.8V
Temperature
I (Industrial)
: -40℃~85℃
C (Commercial) : 0℃~70℃
Generation
Speed
A : 1st
85 : 85MHz
1A : 104MHz
B : 2nd
C : 3rd
Rev.01 (Nov.16. 2011)
62