AP92T03GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
30V
RDS(ON)
4mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
80A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching,ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP92T03GP)
are available for low-profile applications.
G
G
D
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current
ID@TC=100℃
Continuous Drain Current
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
D
S
TO-263(S)
TO-220(P)
S
Rating
Units
30
V
+20
V
80
A
50
A
320
A
89
W
0.71
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Linear Derating Factor
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
4
Value
Units
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201303053
AP92T03GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=40A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
5.2
mΩ
0.5
-
2
V
-
100
-
S
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
VDS=10V, ID=40A
IDSS
VDS=24V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=40A
-
45
72
nC
Drain-Source Leakage Current
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
26
-
nC
VDS=15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=40A
-
63
-
ns
td(off)
Turn-off Delay Time
RG=1Ω,VGS=10V
-
40
-
ns
tf
Fall Time
RD=0.375Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
3500 5600
pF
Coss
Output Capacitance
VDS=25V
-
930
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
770
-
pF
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V,
-
39
-
ns
dI/dt=100A/µs
-
42
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A .
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP92T03GS/P-HF
280
240
200
160
120
V G = 3.0 V
T C = 150 o C
10V
7.0V
5.0V
4.5V
200
ID , Drain Current (A)
T C = 25 o C
240
ID , Drain Current (A)
10 V
7.0 V
5.0 V
4.5 V
160
120
V G = 3 .0V
80
80
40
40
0
0
0
2
4
6
0
8
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.4
I D =30A
I D =40A
V G =10V
T C =25 o C
Normalized RDS(ON)
2.0
RDS(ON) (mΩ)
8
6
1.6
1.2
4
0.8
0.4
2
2
4
6
8
10
25
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6.0
40
5.0
30
RDS(ON) (mΩ)
T j =25 o C
IS(A)
T j =150 o C
20
10
V GS =4.5V
4.0
V GS =10V
3.0
0
2.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0
20
40
60
80
100
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP92T03GS/P-HF
f=1.0MHz
14
10000
C iss
V DS = 12 V
V DS = 16 V
V DS = 20 V
10
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
12
8
C oss
C rss
1000
6
4
2
0
100
0
20
40
60
80
100
120
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100us
ID (A)
100
1ms
10ms
100ms
1s
DC
10
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
280
V DS =5V
VG
ID , Drain Current (A)
240
QG
200
o
o
T j =25 C
4.5V
T j =150 C
160
QGS
QGD
120
80
40
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4