AP1002BMX
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lead-Free Package
D
▼ Low Conductance Loss
▼ Low Profile ( < 0.7mm )
BVDSS
30V
RDS(ON)
1.8mΩ
ID
G
32A
S
Description
The AP1002BMX used the latest APEC Power MOSFET silicon
technology with the advanced technology packaging to provide the
lowest on-resistance loss, low profile and dual sided cooling
compatible.
GreenFETTM
The GreenFETTM package is compatible with existing soldering
techniques and is ideal for power application, especially for high
frequency / high efficiency DC-DC converters.
S
G
D
Absolute Maximum Ratings
Symbol
MX
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
D
S
Rating
Units
30
V
+20
V
ID@TA=25℃
Continuous Drain Current, V GS @ 10V
3
32
A
ID@TA=70℃
Continuous Drain Current, V GS @ 10V3
25
A
ID@TC=25℃
Continuous Drain Current, V GS @ 10V4
180
A
IDM
PD@TA=25℃
PD@TA=70℃
PD@TC=25℃
EAS
Pulsed Drain Current
1
250
A
Total Power Dissipation
3
2.8
W
Total Power Dissipation
3
1.8
W
Total Power Dissipation
4
89
W
28.8
mJ
Single Pulse Avalanche Energy
5
1
IAR
Avalanche Current
24
A
TSTG
Storage Temperature Range
-40 to 150
℃
TJ
Operating Junction Temperature Range
-40 to 150
℃
Thermal Data
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case4
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1.4
℃/W
45
℃/W
1
201008094
AP1002BMX
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=32A
-
1.3
1.8
mΩ
VGS=4.5V, ID=25A
-
1.9
3
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1.2
-
2.35
V
gfs
Forward Transconductance
VDS=10V, ID=25A
45
80
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V
-
-
150
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=25A
-
29
46
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
6.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
-
nC
2
td(on)
Turn-on Delay Time
VDS=16V
-
14
-
ns
tr
Rise Time
ID=25A
-
90
-
ns
Turn-off Delay Time
RG= 1.2 Ω,VGS= 10 V
-
36
-
ns
tf
Fall Time
RD= 0.64 Ω
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
3350 5360
pF
Coss
Output Capacitance
VDS=25V
-
1000
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
320
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
Ω
Min.
Typ.
-
-
110
A
-
-
250
A
-
-
1
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
IS=25A, VGS=0V
Max. Units
trr
Reverse Recovery Time
IS=25A, VGS=0V,
-
55
83
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
75
113
nC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board.
4.TC measured with thermocouple mounted to top (Drain) of part.
o
5.Starting Tj=25 C , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1002BMX
200
240
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =25 C
ID , Drain Current (A)
200
160
o
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =150 C
160
ID , Drain Current (A)
o
120
80
120
80
40
40
0
0
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
3
I D =25A
T A =25 ℃
I D =32A
V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ)
2.6
2.2
1.8
1.6
1.2
0.8
1.4
1
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
30
20
T j =25 o C
IS(A)
T j =150 o C
Normalized VGS(th) (V)
1.2
10
1
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1002BMX
10
f=1.0MHz
6000
5000
8
V DS =15V
V DS =18V
V DS =24V
6
4000
C (pF)
VGS , Gate to Source Voltage (V)
I D =25A
C iss
3000
4
2000
2
C oss
C rss
1000
0
0
0
10
20
30
40
50
60
1
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
1
Operation in this area
limited by RDS(ON)
100us
1ms
10
ID (A)
10ms
100ms
1s
1
0.1
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
100
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
Rthja = 45℃/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4