AP1R803GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
30V
RDS(ON)
1.9mΩ
ID
G
▼ RoHS Compliant
BVDSS
170A
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
D
□
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
S
S
S
G
PMPAK 5x6
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip)
ID@TA=25℃
ID@TA=70℃
170
A
Continuous Drain Current
3
43
A
Continuous Drain Current
3
34
A
300
A
83.3
W
5
W
28.8
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
3
Value
Units
1.5
℃/W
25
℃/W
1
200903043
AP1R803GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=30A
-
-
1.9
mΩ
VGS=4.5V, ID=20A
-
-
3.8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
80
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
24
38
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
5.3
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
13.5
nC
VDS=15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
97
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
30
-
ns
tf
Fall Time
RD=0.5Ω
-
95
-
ns
Ciss
Input Capacitance
VGS=0V
-
2540 4060
pF
Coss
Output Capacitance
VDS=25V
-
785
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.3
V
IS=10A, VGS=0V,
-
45
-
ns
dI/dt=100A/µs
-
53
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1R803GMT-HF
160
300
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
200
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
V G = 4.0 V
100
10V
7.0V
6.0V
5.0V
120
V G =4.0V
80
40
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
4
3.6
I D =30A
V G =10V
I D =20A
Normalized RDS(ON)
T C =25 o C
3.2
RDS(ON) (mΩ)
1.0
2.8
2.4
1.6
1.2
2
0.8
1.6
0.4
1.2
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
30
o
T j =150 C
Normalized VGS(th) (V)
T j =25 o C
IS(A)
20
10
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1R803GMT-HF
16
f=1.0MHz
3200
C iss
2400
12
V DS =15V
V DS =18V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
8
1600
4
800
0
0
C oss
C rss
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100us
ID (A)
100
1ms
10
10ms
100ms
T C =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x R thjc + T c
0.01
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4