AP15T25H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristics
BVDSS
RDS(ON)
ID
D
▼ RoHS Compliant & Halogen-Free
250V
320mΩ
8.7A
G
S
Description
AP15T25 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
8.7
A
ID@TC=100℃
Drain Current, VGS @ 10V
5.6
A
34
A
62.5
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
3
Value
Unit
2
℃/W
62.5
℃/W
1
201311181
AP15T25H-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
VGS=10V, ID=4A
250
-
-
320
V
mΩ
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance 2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=200V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=4A
-
31
49.6
nC
Qgs
Gate-Source Charge
VDS=200V
-
5.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
13
-
nC
td(on)
Turn-on Delay Time
VDD=125V
-
9
-
ns
tr
Rise Time
ID=4A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=25V
-
85
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=4A, VGS=0V
-
-
1.3
V
1250 2000
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
75
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
210
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15T25H-HF
16
20
10V
8.0V
7.0V
6.0V
ID , Drain Current (A)
16
10V
8.0V
7.0V
6.0V
V GS =5.0V
o
T C =150 C
ID , Drain Current (A)
T C =25 o C
12
8
V GS =5.0V
12
8
4
4
0
0
0
4
8
12
16
20
0
24
8
16
24
32
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
2.8
I D =4A
V GS =10V
I D =1mA
2.4
Normalized RDS(ON)
Normalized BVDSS
1.6
1.2
0.8
2
1.6
1.2
0.8
0.4
0.4
0
0
-50
0
50
100
150
-50
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2
8
I D =250uA
1.6
IS(A)
Normalized VGS(th)
6
4
T j =150 o C
T j =25 o C
1.2
0.8
2
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15T25H-HF
f=1.0MHz
2400
I D =4A
V DS =200V
10
2000
8
1600
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1200
4
800
2
400
0
C iss
C oss
C rss
280
0
0
10
20
30
40
0
40
80
120
160
200
240
320
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
Operation in this area
limited by RDS(ON)
10
ID (A)
100us
1ms
1
10ms
100ms
1s
DC
T C =25 o C
Single Pulse
0
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
0.00001
1000
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
16
12
V DS =5V
o
10
ID , Drain Current (A)
ID , Drain Current (A)
T j =25 C
12
8
T j =150 o C
8
6
4
4
2
0
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Drain Current v.s. Case
Temperature
4