AP9T16AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Capable of 2.5V Gate Drive
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
BVDSS
20V
RDS(ON)
20mΩ
ID
19.5A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
+12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 4.5V
19.5
A
ID@TC=100℃
Continuous Drain Current, VGS @ 4.5V
12.3
A
80
A
12.5
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
10
℃/W
62.5
℃/W
1
201110071
AP9T16AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
20
-
-
V
VGS=4.5V, ID=12A
-
-
20
mΩ
VGS=2.5V, ID=10A
-
-
30
mΩ
0.3
-
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=12A
-
29
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=12A
-
16
25.6
nC
Qgs
Gate-Source Charge
VDS=16V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
10
-
ns
tr
Rise Time
ID=12A
-
50
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
24
-
ns
tf
Fall Time
VGS=5V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
1300 2080
pF
Coss
Output Capacitance
VDS=20V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
0.65
1.3
2.6
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=12A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9T16AGH-HF
100
80
ID , Drain Current (A)
80
ID , Drain Current (A)
T C =25 C
5.0V
4.5V
3.5V
o
T C = 150 C
5.0V
4.5V
3.5V
o
60
2.5V
40
V G =2.0V
60
2.5V
40
V G =2.0V
20
20
0
0
0
2
4
6
8
0
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
Fig 2. Typical Output Characteristics
2.0
24
I D =12A
V G =4.5V
I D =10A
T C =25 ℃
1.6
Normalized RDS(ON)
20
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
16
1.2
0.8
12
0.4
8
0
2
4
6
-50
8
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.8
I D =250uA
T j =150 o C
12
Normalized VGS(th) (V)
IS(A)
16
T j =25 o C
8
1.2
0.6
4
0.0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9T16AGH-HF
f=1.0MHz
1600
I D = 12 A
V DS =16V
C iss
6
1200
C (pF)
VGS , Gate to Source Voltage (V)
8
4
800
2
400
C oss
C rss
0
0
0
8
16
24
32
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100
10us
Operation in this
area limited by
RDS(ON)
ID (A)
9
V DS , Drain-to-Source Voltage (V)
100us
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
24
V DS =5V
20
ID , Drain Current (A)
ID , Drain Current (A)
40
30
20
16
12
8
T j =150 o C
10
4
T j =25 o C
T j =-40 o C
0
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4