AP9561AGJ-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -40V RDS(ON) 18mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS -39A S Description AP9561A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications. G D TO-251(J) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -39 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -25 A -160 A 50 W 1.13 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance Junction-case 2.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 201303042 AP9561AGJ-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-24A - - 18 mΩ VGS=-4.5V, ID=-20A - - 26 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-20A - 31 - S IDSS Drain-Source Leakage Current VDS=-32V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-20A - 27 43 nC Qgs Gate-Source Charge VDS=-32V - 7 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 14 - nC td(on) Turn-on Delay Time VDS=-20V - 10 - ns tr Rise Time ID=-20A - 46 - ns td(off) Turn-off Delay Time RG=3.3Ω - 66 - ns tf Fall Time VGS=-10V - 90 - ns Ciss Input Capacitance VGS=0V - 3000 4800 pF Coss Output Capacitance VDS=-25V - 300 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 5.5 11 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-20A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-10A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 30 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9561AGJ-HF 120 160 100 -ID , Drain Current (A) -ID , Drain Current (A) 120 -10V -7.0V -6.0V -5.0V V G = - 4.0 V T C = 150 o C -10V -7.0 V -6.0 V -5.0 V T C = 25 o C V G = - 4.0 V 80 80 60 40 40 20 0 0 0 4 8 12 0 16 4 6 8 10 12 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 22 2.0 I D = -20 A T C =25 ℃ I D = -24A V G = -10V 1.8 20 1.6 Normalized RDS(ON) RDS(ON) (mΩ ) 2 -V DS , Drain-to-Source Voltage (V) 18 1.4 1.2 1.0 0.8 16 0.6 0.4 14 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 2 I D = -250uA 1.6 Normalized -VGS(th) -IS(A) 16 12 T j =150 o C T j =25 o C 8 1.2 0.8 0.4 4 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9561AGJ-HF 10 f=1.0MHz 4000 8 C iss 3000 C (pF) -VGS , Gate to Source Voltage (V) V DS = -32V I D = -20A 6 2000 4 1000 2 C oss C rss 0 0 0 10 20 30 40 50 1 60 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100 -ID (A) Operation in this area limited by RDS(ON) 100us 10 1ms 10ms 100ms DC o T C =25 C Single Pulse 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 80 V DS = -5V T j =25 o C -ID , Drain Current (A) -ID , Drain Current (A) 40 30 20 T j =150 o C 60 40 20 10 0 0 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 11. Maximum Continuous Drain Current v.s. Case Temperature 0 1 2 3 4 5 6 -V GS , Gate-to-Source Voltage (V) Fig 12. Transfer Characteristics 4