AP4525GEM Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance D1 RDS(ON) D1 ▼ Fast Switching Performance G2 S2 ▼ RoHS Compliant SO-8 40V S1 G1 28mΩ ID 6A P-CH BVDSS -40V RDS(ON) 42mΩ ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. -5A D1 G1 D2 G2 The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 40 -40 V ±16 ±16 V Continuous Drain Current 3 6.0 -5.0 A Continuous Drain Current 3 5.0 -4.0 A 30 -30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 ℃/W 200725064-1/7 AP4525GEM o N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 40 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.04 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=6A - - 28 mΩ VGS=4.5V, ID=4A - - 32 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=6A - 6 - S Drain-Source Leakage Current (Tj=25 C) VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±16V - - ±30 uA ID=6A - 8 13 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS o IGSS 2 VGS=0V, ID=250uA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=20V - 7 - ns tr Rise Time ID=6A - 20 - ns td(off) Turn-off Delay Time RG=3Ω,VGS=10V - 20 - ns tf Fall Time RD=3.3Ω - 4 - ns Ciss Input Capacitance VGS=0V - 580 930 pF Coss Output Capacitance VDS=25V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 2 3 Ω Min. Typ. IS=1.1A, VGS=0V - - 1.8 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC 2/7 AP4525GEM o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -40 - - V - -0.02 - V/℃ VGS=-10V, ID=-5A - - 42 mΩ VGS=-4.5V, ID=-3A - - 60 mΩ -0.8 - -2.5 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) 2 Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS VGS=0V, ID=-250uA VDS=VGS, ID=-250uA Max. Units VDS=-10V, ID=-5A - 5 - S o VDS=-40V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±16V - - ±30 uA Drain-Source Leakage Current (Tj=25 C) 2 Qg Total Gate Charge ID=-5A - 9 24 nC Qgs Gate-Source Charge VDS=-20V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC VDS=-20V - 8.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-5A - 15 - ns td(off) Turn-off Delay Time RG=3Ω,VGS=-10V - 27 - ns tf Fall Time RD=4Ω - 25 - ns Ciss Input Capacitance VGS=0V - 770 1230 pF Coss Output Capacitance VDS=-20V - 165 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz - 6 9 Ω Min. Typ. IS=-1.1A, VGS=0V - - -1.8 V IS=-5A, VGS=0V - 20 - ns dI/dt=-100A/µs - 16 - nC Source-Drain Diode Symbol VSD Parameter Test Conditions 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad. 3/7 AP4525GEM N-Channel 30 30 10V 7.0V 5.0V 4.5V 10V 7.0V 5.0V 4.5V T A = 150 o C ID , Drain Current (A) ID , Drain Current (A) T A = 25 o C 20 V G =3.0V 10 20 V G =3.0V 10 0 0 0 1 2 0 3 V DS , Drain-to-Source Voltage (V) 1 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 ID=6A V G =10V ID=4A T A =25 o C 1.6 Normalized RDS(ON) RDS(ON) (mΩ ) 100 80 60 1.2 40 0.8 20 2 4 6 8 25 10 50 75 100 125 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 Normalized VGS(th) (V) IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4525GEM N-Channel f=1.0MHz 1000 C iss I D =6A V DS =20V 8 C (pF) VGS , Gate to Source Voltage (V) 12 C oss 100 C rss 4 10 0 0 5 10 15 1 20 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 100us 1ms 1 10ms 100ms T A =25 o C Single Pulse 0.1 1s DC Normalized Thermal Response (Rthja) 100 ID (A) 13 V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135o C/W Single Pulse 0.01 0.01 0.1 1 10 100 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG V DS =5V ID , Drain Current (A) 40 T j =25 o C T j =150 o C QG 4.5V 30 QGS QGD 20 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4525GEM P-Channel 30 30 -10V -7.0V -5.0V -4.5V 20 V G = - 3.0V 10 20 V G = - 3.0V 10 0 0 0 1 2 3 4 0 5 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 120 I D = -5A V G = -10V I D = -3 A 1.4 T A = 25 o C 90 Normalized RDS(ON) RDS(ON) (mΩ) -10V -7.0V -5.0V -4.5V o T A = 150 C -ID , Drain Current (A) -ID , Drain Current (A) T A = 25 o C 60 1.2 1.0 0.8 30 2 4 6 8 25 10 -V GS ,Gate-to-Source Voltage (V) 50 75 100 125 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 Normalized -VGS(th) (V) 8 6 -IS(A) T j =150 o C T j =25 o C 4 1.2 0.8 2 0 0.4 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4525GEM P-Channel f=1.0MHz 10000 I D = -5 A V DS = - 2 0 V 8 1000 C iss C (pF) -VGS , Gate to Source Voltage (V) 12 4 C oss C rss 100 0 10 0 4 8 12 16 20 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 100us 1ms 10 -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 10ms 1 100ms T c =25 o C Single Pulse 0.1 1s DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W Single Pulse 0.01 0.01 0.1 1 10 100 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 o -ID , Drain Current (A) V DS = -5V VG o T j =25 C T j =150 C QG 20 -4.5V QGS QGD 10 Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7