AP9930GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
N-CH BVDSS
P2G
N2D/P2D
RDS(ON)
P1S/P2S
P1G
LCD Monitor Inverter
N1D/P1D
5.5A
P-CH BVDSS
N1G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
33mΩ
ID
N2G
N1S/N2S
SO-8
30V
-30V
RDS(ON)
55mΩ
ID
-4.1A
P1S
P2S
P1G
P2G
P2N2D
P1N1D
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N2G
N1G
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
N2S
N1S
Absolute Maximum Ratings
Units
P-channel
30
-30
V
±25
±25
V
Continuous Drain Current
3
5.5
-4.1
A
Continuous Drain Current
3
4.4
-3.3
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200923043
AP9930GM
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.04
-
V/℃
VGS=10V, ID=5A
-
-
33
mΩ
VGS=4.5V, ID=3A
-
-
60
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=5A
-
5.2
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=5A
-
7
10
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
7
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=15Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=25V
-
229.8
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
94
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=1.7A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
AP9930GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.04
-
V/℃
VGS=-10V, ID=-4A
-
-
55
mΩ
VGS=-4.5V, ID=-2A
-
-
100
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
Max. Units
VDS=-10V, ID=-5A
-
4.8
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=-5A
-
7
11
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
18
-
ns
Ciss
Input Capacitance
VGS=0V
-
490
790
pF
Coss
Output Capacitance
VDS=-25V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-1.7A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 186 ℃/W when mounted on Min. copper pad.
AP9930GM
N-Channel
25
20
T A =25 o C
10V
8.0V
6.0V
4.0V
15
ID , Drain Current (A)
20
ID , Drain Current (A)
T A =150 o C
10V
8.0V
6.0V
4.0V
15
10
V G =3.0V
10
V G =3.0V
5
5
0
0
0
1
2
3
4
5
6
0
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
1.6
45
I D =3A
T A =25 ℃
I D =5A
V G =10V
1.4
Normalized RDS(ON)
40
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
35
30
1.2
1.0
0.8
25
0.6
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10.00
1.8
1.00
T j =25 o C
IS(A)
VGS(th) (V)
T j =150 o C
1.6
1.4
0.10
1.2
1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
T j ,Junction Temperature (
150
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9930GM
N-Channel
f=1.0MHz
VGS , Gate to Source Voltage (V)
12
1000
C iss
I D =5A
V DS =15V
10
C oss
C (pF)
8
6
C rss
100
4
2
0
10
0
4
8
12
16
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
100us
1ms
1
10ms
100ms
1s
T A =25 o C
Single Pulse
0.1
DC
0.2
0.1
0.1
0.05
P DM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 186℃
℃ /W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q
AP9930GM
P-Channel
25
20
o
T A =25 C
-10V
-8.0V
-6.0V
-8.0V
20
15
-6.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
o
T A =150 C
-10V
15
-4.0V
10
10
-4.0V
5
5
V G =-3.0V
V G =-3.0V
0
0
0
1
2
3
4
5
0
6
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
95
1.6
I D =-2A
T A =25 ℃
I D = -4 A
V G = -10 V
1.4
Normalized R DS(ON)
RDS(ON) (mΩ )
1
75
55
1.2
1
0.8
35
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
10.00
o
T j =150 C
T j =25 o C
2
-IS(A)
-VGS(th) (V)
1.00
1.5
0.10
0.01
1
0.1
0.3
0.5
0.7
0.9
1.1
-V SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9930GM
P-Channel
f=1.0MHz
16
1000
-VGS , Gate to Source Voltage (V)
I D =-5A
V DS =-15V
C iss
12
C (pF)
C oss
8
C rss
100
4
10
0
0
4
8
12
1
16
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
100us
ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
1
10ms
0.1
100ms
1s
T A =25 o C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.01
Rthja = 186℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q