The following document contains information on Cypress products. FUJITSU MICROELECTRONICS DATA SHEET DS04-27202-6Ea ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A ■ DESCRIPTION The Fujitsu Microelectronics MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching regulator system up to 700 kHz. Output is suitable for power MOS FET drive owing to adoption of totem pole output. The MB3769A provides stand-by mode at low voltage power supply when it is applied in primary control system. ■ FEATURES • • • • • • • • • • • • • • High frequency oscillator (f = 1 kHz to 700 kHz) On-chip wide band frequency operation amplifier (BW = 8 MHz Typ) On-chip high speed comparator (td = 120 ns Typ) Internal reference voltage generator provides a stable reference supply (5 V ± 2%) Low power dissipation (1.5 mA Typ at standby mode, 8 mA Typ at operating mode) Output current ± 100 mA (± 600 mA at peak) High speed switching operation (tr = 60 ns, tf = 30 ns, CL = 1000 pF Typ) Adjustable Dead-time On-chip soft start and quick shut down functions Internal circuitry prohibits double pulse at dynamic current limit operation Under voltage lock out function (OFF to ON: 10 V Typ, ON to OFF: 8 V Typ) On-chip output shut down circuit with latch function at over voltage On-chip Zener diode (15 V) One type of package (SOP-16pin : 1 type) ■ APPLICATIONS • Power supply module • Industrial Equipment • AC/DC Converter etc. Copyright©1994-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2006.5 MB3769A ■ PIN ASSIGNMENT (TOP VIEW) +IN (OP) 1 16 +IN (C) -IN (OP) 2 15 -IN (C) FB 3 14 VREF DTC 4 13 OVP CT 5 12 VCC RT 6 11 VZ GND 7 10 VH VL 8 9 (FPT-16P-M06) 2 OUT MB3769A ■ BLOCK DIAGRAM Fig. 1 - MB3769A Block Diagram Over Current Detection Comparator -IN (C) 15 S +IN (C) 16 Q + R 1.85 V + VREF 1.8 V DTC + + +PWM +Comp. + 10 VH 9 OUT 8 VL - 4 STB STB FB 3 +IN (OP) 1 + Error Amp -IN (OP) 2 - OVP 13 + Over Voltage Detector S Q Power off 1.5 V to 3.5 V 2.5 V CT 5 RT 6 V CC (2.5 V) Triangle Wave Oscillator + 8/10 V STB - 12 15.4 V VZ R 5.0 + 0.1 V Reference Regulator 11 + 14 VREF 30 kΩ GND 7 3 MB3769A ■ ABSOLUTE MAXIMUM RATINGS Parameter Power Supply Voltage Output Current Operation Amp Input Voltage Power Dissipation : SOP Storage Temperature Symbol Rating Unit Min Max VCC 20 IOUT 120 (660* ) mA Vin (OP) VCC + 0.3 (≤ 20) V PD 620*2 mW TSTG -55 +125 °C V 1 *1 : Duty ≤ 5% *2 : Ta = + 25 °C, SOP package is mounted on the epoxy board. (4 cm x 4 cm x 0.15 cm) WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. 4 MB3769A ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol SOP package Min Typ Max Unit Power Supply Voltage VCC 12 15 18 V Output Current (DC) IOUT -100 - +100 mA IOUT PEAK -600 - +600 mA Operation Amp Input voltage VINOP -0.2 0 to VREF VCC-3 V FB Sink Current ISINK - - 0.3 mA ISOURCE Output Current (Peak) - - 2 mA + INC V -0.3 0 to 3 VCC V VINC- -0.3 0 to 2 2.5 V Reference Section Output Current IREF - 2 10 mA Timing Resistor RT 9 18 50 kΩ 6 FB Source Current Comparator Input Voltage CT 100 680 10 pF fOSC 1 100 700 kHz Zener Current IZ - - 5 mA Operating Ambient Temperature: SOP Ta -30 +25 +75 °C Timing Capacitor Oscillator Frequency WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. 5 MB3769A ■ ELECTRICAL CHARACTERISTICS (VCC=15V, Ta=+25°C) Parameter VREF Value Unit Typ Max IREF = 1 mA 4.9 5.0 5.1 V ∆VRIN 12 V ≤ VCC ≤ 18 V - 2 15 mV ∆VRLD 1 mA ≤ IREF ≤10 mA - -1 -15 mV ∆VRTEMP -30 °C ≤ Ta ≤ +85 °C - ±200 ±750 µV/ °C Short Circuit Output Current ISC VREF = 0 V 15 40 - mA Oscillator Frequency fOSC RT = 18 kΩ CT = 680 pF 90 100 110 kHz ∆fOSCIN 12 V ≤ VCC ≤ 18 V - ±0.03 - % ∆fOSC /∆T -30 °C ≤ Ta ≤ +85 °C - ±2 - % ID - - 2 10 µA Dmax Vd = 1.5 V 75 80 85 % Dset Vd = 0.5 VREF 45 50 55 % VDO - - 3.5 3.8 V VDM - 1.55 1.85 - V VDH VCC = 7 V, IDTC = -0.3 mA 4.5 - - V Input Offset Voltage VIO (OP) V3 = 2.5 V - ±2 ±10 mV Input Offset Current IIO (OP) V3 = 2.5 V - ±30 ±300 nA Input Bias Current IIR (OP) V3 = 2.5 V -1 -0.3 - µA Common-Mode Input Voltage VCM (OP) 12 V ≤ VCC ≤ 18 V -0.2 - VCC -3 V Voltage Gain Av (OP) 0.5 V ≤ V3 ≤ 4 V 70 90 - dB Band Width BW Av = 0 dB - 8 - MHz Slew Rate SR RL = 10 kΩ, Av = 0 dB - 6 - V/µs CMR VIN = 0 V to 10 V 65 80 - dB “H” Level Output Voltage VOH I3 = -2 mA 4.0 4.6 - V “L” Level Output Voltage VOL I3 = 0.3 mA - 0.1 0.5 V Input Regulation Reference Load Regulation Section Temp. Stability Voltage Stability Temp. Stability Input Bias Current Max. Duty Cycle Duty Cycle Set Dead -time 0% Duty Control Input Cycle Section Threshold Max. Duty Voltage Cycle Discharge Voltage Error Amplifier Section Condition Min Output Voltage Oscillator Section Symbol Common-Mode Rejection Rate (Continued) 6 MB3769A (Continued) (VCC=15V, Ta=+25°C) Parameter Current Comparator Symbol Condition Input Offset Voltage VIO (C) Input Bias Current Output Section Over Voltage Detector Under Voltage Out Stop Supply Current Unit Min Typ Max VIN = 1 V - ±5 ±15 mV IIB (C) VIN = 1 V -5 -1 - µA VCM (C) - 0 - 2.5 V AV (C) - - 200 - V/V Response Time td 50 mV over drive - 120 250 ns 0% Duty Cycle VOPO - 3.5 3.8 V Max Duty Cycle VOPM RT = 18 kΩ CT = 680 pF 1.55 1.85 - V “H” Level Output Voltage VH IOUT = -100 mA 12.5 13.5 - V “L” Level Output Voltage VL IOUT = 100 mA - 1.1 1.3 V Rise Time tr CL = 1000 pF, RL = ∞ - 60 120 ns Fall Time tf CL = 1000 pF, RL = ∞ - 30 80 ns Threshold Voltage VOVP - 2.4 2.5 2.6 V Input Current IIOVP VIN = 0 V -1.0 -0.2 - µA VCC RST - 2.0 3.0 4.5 V Off to On VTHH - 9.2 10.0 10.8 V On to Off VTHL - 7.2 8.0 8.8 V Standby * ISTB RT = 18 kΩ 4 pin Open - 1.5 2.0 mA Operating ICC RT = 18 kΩ - 8.0 12.0 mA Zener Voltage VZ IZ = 1 mA - 15.4 - V Zener Current IZ V11-7 = 1 V - 0.03 - mA Common-Mode Input Voltage Voltage Gain PWM Comparator Section Value VCC Reset * : VCC = 8V 7 MB3769A Fig. 2 - MB3769A Test Circuit 1.0 V 15.0 V OUTPUT 10 kΩ 16 +IN (C) 15 14 -IN (C) VREF 13 12 11 10 OVP VCC VZ VH COMP in 9 OUT MB3769A +IN (OP) 1 -IN (OP) FB DTC 3 4 2 CT RT GND VL 5 6 7 8 680 pF VFB 1000 pF 18 kΩ VDTC TEST INPUT <tr, tf, td> 3.5 V Typ Voltage at CT 1.5 V Typ 1.05 V tr of COMP-in should be within 20 ns. 1.0 V COMP in 0.95 V 90% 50% OUTPUT 10% tr tf td 8 MB3769A Fig. 3 - MB3769A Operating Timing Soft Start Operation Dead-Time Input Voltage Quick Shutdown Operation 3.5 V 1.85V Triangle Wave Form Error Amp Output 1.5 V PWM Comparator Output Output Wave Form Comp. Current -in Wave Form Comp. Current +in Wave Form (1 V) Comp. Current Latch Output 2.5 V Voltage at OVP OVP Latch Power Supply Voltage (15 V) 10 V (Typ) 0V 8V (Typ) Over Current Detector 3V Over Voltage Detector Standby Mode Over Voltage Detector Latch OFF Standby Mode 9 MB3769A ■ FUNCTIONS 1. Error Amplifier The error amplifier detects the output voltage of the switching regulator. The error amplifier uses a high-speed operational amplifier with an 8 MHz bandwidth (typical) and 6 V/µs slew rate (typical). For ease of use, the common mode input voltage ranges from -0.2 V to VCC-3 V. Figure 4 shows the equivalent circuit. Fig. 4 - MB3769A Equivalent Circuit Differential Amp VCC VREF To PWM Comp. -IN (OP) 150 Ω +IN (OP) 700 µA GND Protection element 2. Overcurrent Detection Comparator There are two methods for protection of the output transistor of this device from overcurrents; one restricts the transistor’s ontime if an overcurrent that flows through the output transistor is detected from an average output current, and the other detects an overcurrent in the external transistor (FET) and shuts the output down instantaneously. Using average output currents, the peak current of the external transistor (FET) cannot be detected, so an output transistor with a large safe operation area (SOA) margin is required. For the method of detecting overcurrents in the external transistor (FET), the output transistor can be protected against a shorted filter capacitor or power-on surge current. The MB3769A uses dynamic current limiting to detect overcurrents in the output transistor (FET). A high-speed comparator and flip-flop are built-in. To detect overcurrents, compare the voltage at +IN(C) of current detection resistor connected the source of the output transistor (FET), with the reference voltage (connected to -IN(C)) using a comparator. To prevent output oscillation during overcurrent, flipflop circuit protects against double pulses occurring within a cycle. The output of overcurrent detector is ORed with other signals at the PWM comparator. See the example “■ Application Example” for details on use. Figure 5 shows the equivalent circuit of the over-current detection comparator. 10 MB3769A Fig. 5 - MB3769A Equivalent Circuit Over Current Detection Comparator VREF To PWM Comp. -IN (C) +IN (C) Protection element 3. DTC: Dead Time Control (Soft-Start and Quick Shutdown) The dead time control terminal and the error amplifier output are connected to the PWM comparator. The maximum duty cycle for VDTC (voltage applied to pin 4) is obtained from the following formula (approximate value at low frequency): Duty Cycle = (3.5 - VDTC) x 50 (%) [0% ≤ duty cycle ≤ DMAX (80%)] The dead time control terminal is used to provide soft start. In Figure 6, the DTC terminal is connected to the VREF terminal through R and C. Because capacitor C does not charge instantaneously when the power is turned on, the output transistor is kept turned off. The DTC input voltage and the output pulse width increase gradually according to the RC time constant so that the control system operates safely. Fig. 6 - MB3769A Soft Start Function VREF VREF C C R1 DTC DTC R2 R Soft Start Soft Start + DTC The quick shutdown function prevents soft start malfunction when the power is turned off and on quickly. After the power is shut down, soft start is disabled because the DTC terminal has low electric potential from the beginning if the power is turned on again before the capacitor is discharged. The MB3769A prevents this by turning on the discharge transistor to quickly discharge the capacitor in the stand-by mode. 11 MB3769A 4. Triangular Wave Oscillator The oscillation frequency is expressed by the following formula: fOSC ~ 1 0.8 x CT x RT + 0.0002 ms [kHz] CT :µF RT :kΩ For master/slave synchronized operation of several MB3769As, the CT and RT terminals of the master MB3769A are connected in the usual way and the CT terminals of the master and slave device (s) are connected together. The slave MB3769A’s RT terminal is connected to it’s VREF terminal to disable the slave’s oscillator. In this case, set 50/n kΩ (n is the number of master and slave ICs) to the upper limit of RT so that internal bias currents do not stop the master oscillation. Fig. 7 - MB3769A Synchronized Operation master RT slave CT VREF RT CT 5. Overvoltage Detector The overvoltage detection circuit shuts the system power down if the switching regulator’s output voltage is abnormal or if abnormal voltage is appeared. The reference voltage is 2.5 V (VREF /2). The system power is shut down if the voltage at pin 13 rises above 2.5 V. The output is kept shut down by the latching circuit until the power supply is turned off (see Figure 3). 6. Stand-by Mode and Under-Voltage Lockout (UVLO) Generally, VGS > 6 to 8 V is required to use power MOSFET for switching. UVLO is set so that output is on at VCC ≥ 10 V (standard) when the power is turned on and is off at VCC ≤ 8 V (standard) when the power is turned off. In the stand-by mode, the power supply current is limited to 2 mA or less when the output is inhibited by the UVLO circuit. When the MB3769A is operated from the 100 VAC line, the power supply current is supplied through resistor R (Figure 8). That is, the IC power supply current is supplied by the AC line through resistor R until operation starts. Current is then supplied from the transformer tertiary winding, eliminating the need for a second power supply. Two volts (typical) of hysteresis are provided for return from operation mode to stand-by mode not to return to stand-by mode until output power is turned on or to avoid malfunction due to noise. 12 MB3769A Fig. 8 - MB3769A Primary Control R C MB3769A 7. Output Section Because the OUT terminal (pin 9) carries a large current, the collector and emitter of the output transistor are brought out to the VH and VL terminals. In principle, VH is connected to VCC and VL is connected to GND, but VH can be supplied from another power supply (4 V to 18 V). Note that VL and GND should be connected as close to the IC package as possible. A capacitor of 0.1 µF or more is inserted between VH and VL (see Figure 9). Fig. 9 - MB3769A Typical Connection Circuit Of Output 12 10 9 7 8 ≥ 0.1 µF 13 MB3769A ■ APPLICATION EXAMPLE Fig. 10 - MB3769A DC - DC Convertor 12 to 18 V 5V 1A 3.6 kΩ 3.3 kΩ 0.1 µF 10 kΩ 330 pF 100 kΩ 1+IN (OP) +IN (C) 16 2-IN (OP) IN (C) 15 2.4 kΩ 20 kΩ VREF 14 3FB 5CT OVP 13 MB3769A VCC 12 6RT VZ 11 7GND VH 10 4DTC OUT 9 8VL R S 220 pF C 51 kΩ 10 kΩ 5.1 kΩ 18 kΩ 1Ω Overcurrent Protection Circuit The waveform at the output FET source terminal is shown in Figure 11. The RC time constant must be chosen so that the voltage glitch in the waveform does not cause erroneous overcurrent detection. This time constant is should be from 5 ns to 100 ns. A detection current value depends on R or C because a waveform is weakened. To keep this glitch as small as possible, the rectifiers on the transformer secondary winding must be the fast-recovery type. Fig. 11 - MB3769A Output FET Source Point Glitch Point S waveform 14 MB3769A Fig. 12 -Primary Control 100 VAC R 22 kΩ 4.7 µF 22 kΩ 680 18 pF kΩ 15 V 2 -IN(OP) -IN(C) 15 3 FB VREF 14 4 DTC OVP 13 5 CT VCC 12 6 RT VZ 11 7 GND VH 10 47 kΩ * 22 Ω 10 kΩ 15 kΩ OUT 9 8 VL + + 1 +IN(OP) +IN(C) 16 *: The resistance (22 Ω) as an output current limiter at pin 9 is required when driving the FET which is more than 1000 pF (CGS). Fig. 13 -Secondly Control 0V Secondly power supply 5.1 kΩ 12 V 43 kΩ 10 kΩ 39 kΩ 1000 27 pF kΩ 1 +IN(OP) +IN(C) 16 51 kΩ 2 -IN(OP) -IN(C) 15 3 FB VREF 14 4 DTC OVP 13 5 CT VCC 12 6 RT VZ 11 7 GND VH 10 8 VL 10 kΩ 680 pF OUT 9 18 kΩ 15 MB3769A ■ SHORT PROTECTION CIRCUIT The system power can be shut down to protect the output against intermittent short-circuits or continuous overloads. This protection circuit can be configured using the OVP input as shown in Figure 14. Fig. 14 -Case I. (Over Protection Input) Primary Mode 15 kΩ IN-B 8 3 8.2 kΩ IN-A PC2 4 MB3761 1 9 V0 (5V output) PC1 OUT-B 500 Ω HYS-A 6 5 500 Ω 6.8 kΩ MB3769A 14 20 kΩ PC2 13 7 1 µF 10 kΩ PC1 100 kΩ Fig. 15 -Case II. (Over Protection Input) Secondly Mode V0 (5V output) 14 VREF MB3769A 20 kΩ 15 kΩ IN-B 8 13 6 OUT-B 3 OVP MB3761 8.2 kΩ IN-A 1 2 5 6.8 kΩ 16 HYS-A 1 µF 200 kΩ MB3769A ■ HOW TO SYNCHRONIZE WITH OUTSIDE CLOCK The MB3769A oscillator circuit is shown in Figure 16. CT charge and discharge currents are expressed by the following formula: 5V ICT = ±2 x I1 = ± RT Fig. 16 -Oscillator Circuit VREF 500 Ω 1 kΩ 500 Ω + - I1 2 x I1 2 x I1 S 3.5 V Q R ICT RT - + CT 6 5 (4 x I1) + 2.5 V 300 Ω 1.5 V 150Ω This circuit shows that if the voltage at the CT terminal is set to 1.5 V or less, one oscillation cycle ends and the next cycle starts. An example of an external synchronous clock circuit is shown in Figure 17. Fig. 17 -Typical Connection of Synchronized Outside Clock Circuit tcycle ex. MB74HC04 5 VP MB3769A 6 R(5.1 k Ω) RT CT VP clamp circuit (VL) tP tcycle = 2.5 µs (fEXT = 400 kHz) = 0.5 µs tP RT = 11 k Ω The Figure 18 shows the CT terminal waveform. VTH may be near 2.5 V. In this case, the maximum duty cycle is restricted as shown in the formula below if tP’ = 0. Fig. 18 -Voltage Waveform at CT 3.5 V VTH ( .. 2.5 V) 1.85 V VCT Dmax= (3.5 - 1.85) + (3.5 - VTH) (3.5 - VL) + (3.5 - VTH) ≤ 59% (VL = 0 V: No clamp circuit) VL When VTH = 2.5 V, CT can be provided by followings. tcycle - tP = 1 fOSC tP ’ x (3.5 - VL) + (3.5 - VTH) fOSC(3.5 - 1.5) x 2 17 MB3769A fOSC ~ CT ~ 1 0.8 x CT x RT 1 x 0.8 x RT 4 4.5 - VL (tcycle - tP) [pF] (RT: kΩ, tcycle, tP: ns) Make VL high for a large duty cycle for the clamp circuit. The circuits below can be used because the clamp voltage must be much lower than 1.5 V. Fig. 19 -Clamp Circuit VREF R1 (4.7 kΩ) VREF 8 (1.2 V) 3 (1.2 V) 0.1 µF A R2 (1.2 kΩ) 820 Ω 0.1 µF MB3761 4 5 B In circuit A, R1 and R2 must be determined considering the effects of tP, R, or RT. The transistor saturation voltage must be very small (<0.15 V) for any clamp circuit, so a transistor with a very small VCE (sat) should be used. 18 MB3769A ■ SYNCHRONIZED OUTSIDE CLOCK CIRCUIT Fig. 20 5V 1.No Clamp Circuit (Connect with GND) V 11 V VP (5 V/div) CT = 150 pF + Prove Capacitor (~ 15 pF) RT = 11 kΩ 5 pin CT (1 V/div) MB74HC04 CT 150 pF VP 5.1 kΩ GND Level (CT) OUT (10 V/div) 10 V 500 ns nS 500 Fig. 21 5V 2.Clamp Circuit A (Dividing Resistor) 1V VP (5 V/div) CT = 220 pF + Prove capacitor (~ 15 pF) RT = 11 kΩ CT (1 V/div) 5 pin CT 220 pF GND Level (CT) MB74HC04 VP 5.1 kΩ VREF 4.7 kΩ OUT (10 V/div) 0.1 µF 500 ns 10 V 1.2 kΩ Fig. 22 5V 3.Clamp Circuit B (Apply MB3761) 1V VP (5 V/div) CT (1 V/div) CT = 220 pF + Prove capacitor (~ 15 pF) RT = 11 kΩ 5 pin CT 220 pF MB74HC04 VP 5.1 kΩ VREF GND Level (CT) 820 Ω OUT (10 V/div) 10 V 500 ns 0.1 µF 8 3 MB3761 4 5 19 MB3769A Fig. 23 -Test Circuit 15 V (VCC) 12 14 2 15 3 2.5 V 10 1 2.4 kΩ 2.4 kΩ MB3769A 4 5 9 6 11 kΩ 20 16 7 8 13 OUT MB3769A ■ TYPICAL PERFORMANCE CHARACTERISTICS Fig. 25 -Standby Current vs. Operating Ambient Temperature OVP operating V13 = 5 V Normal operating V13 = 0 V 10.0 8.0 6.0 2 OVP operating 4.0 2.0 0.0 0.0 4.0 8.0 12.0 16.0 Standby Current ISTB (mA) Power Supply Current ICC (mA) Fig. 24 -Power Supply Voltage vs. Power Supply Current (Low Voltage stop of VCC) 20.0 VCC = 8 V 1 0 Power Supply Voltage VCC (V) -30 + 85 +0 + 25 + 50 Operating Ambient Temperature Ta (°C) Fig. 26 -Reference Voltage Fig. 27 -“L” level Output Voltage vs. “L” level Output Current VCC = 15 V IREF = 1 mA “L” level Output Voltage VOL (V) Reference Voltage VREF (V) 5.1 ±750 µV/C 5.0 4.9 0 -30 3 VCC = 15 V Ta = +25 °C 2 1 0 0.2 0.4 0.6 0.8 “L” level Output Current IOL (mA) 0 + 25 + 50 + 85 Operating Ambient Temperature Ta (°C) “H” level Output Voltage VOH (V) Fig. 28 -“H” level Output Voltage vs. “H” level Output Current 5 VCC = 15 V Ta = +25 °C 4 3 2 1 0 2 4 6 8 “H” level Output Current IOH (mA) 10 (Continued) 21 MB3769A 700 500 CT = 100 pF 400 200 CT = 680 pF CT = 220 pF 100 90 80 70 CT = 1000 pF 60 4 VH VL 2 VL 1 0 20 k 50 k 100 k 200 k 500 k 1M Fig. 32 -Oscillator Frequency vs. Operating Ambient Temperature VCC = 15 V 40 30 CT = 2200 pF 20 7 8 9 10 20 30 40 50 60 70 RT (kΩ), CT (pF) 100 fOSC = 500 kHz 60 40 20 0 1 2 3 4 Dead Time Control Voltage VDTC (V) 5 Dead Time Control Voltage VDTC (V) fOSC = 200 kHz 100 kHz 2 300 kHz 500 kHz 0 -2 Target fOSC = 100 kHz ±2 % typ 0 + 25 + 50 + 85 Operating Ambient Temperature Ta (°C) VCC = 15 V CT = 1000 pF Ta = +25 °C 80 4 -4 -30 Fig. 31 -Duty Cycle vs. Dead Time Control Voltage Duty Cycle (%) VH Frequency fOSC (Hz) 50 0 VCC = 15 V Ta = +25 °C 3 Oscillator Frequency fOSC (%) Oscillator Frequency fOSC (kHz) 300 Fig. 30 -“H”, “L” level Output Voltage vs. Oscillator Frequency “H”, “L” level Output Voltage VH, VL (V) Fig. 29 -Oscillator Frequency vs. RT, CT Fig. 33 -Dead Time Control Voltage vs. Current(Standby Mode) 5.0 4.0 VCC = 7 V Ta = +25 °C 3.0 2.0 1.0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Dead Time Control Current IDTC (mA) (Continued) 22 MB3769A Fig. 34 -Gain/Phase vs. Frequency (Set Gv = 60 dB) Phase 20 -300 Gain 0 -360 55 Duty (%) Gain (dB) 40 VCC = 15 V -180 Ta = +25 °C -240 Phase (deg) 60 Fig. 35 -Duty vs. Operating Ambient Temperature VCC = 15 V CL = 1000 pF VDTC = 2.5 V fOSC = 200 kHz 50 fOSC = 500 kHz 10 k 100 k 1M 10 M 45 0 Frequency f (Hz) -30 0 + 25 + 50 + 85 Operating Ambient Temperature Ta (°C) VCC = 15 V Ta = +25 °C 1.5 Fig. 38 -tr/tf of Output and td of Comparator vs. Operating Ambient Temperature 160 VCC = 15 V CL = 1000 pF 1.0 140 0.5 td 120 0 0 100 200 300 400 500 “L” level Output Current IOL (mA) 600 “H” level Output Voltage VOH (V) Fig. 37 -“H” level Output Voltage vs. “H” level Output Current 14.0 VCC = 15 V Ta = +25 °C tr/tf/td (ns) “L” level Output Voltage VOL (V) Fig. 36 -“L” level Output Voltage vs. “L” level Output Current 100 80 tr 60 40 13.5 tf 20 13.0 0 -30 12.5 0 0 + 25 + 50 + 85 Operating Ambient Temperature Ta (°C) 0 100 200 300 400 500 “H” level Output Current IOH (mA) 600 (Continued) 23 MB3769A (Continued) Fig. 39 -OVP Latch Standby Power Supply Current vs. Operating Ambient Temperature Fig. 40 -OVP Supply Voltage Reset vs. Operating Ambient Temperature 5 VCC = 8 V 4 pin open 13 pin = 3 V OVP Supply Voltage Reset (V) Standby Power Supply Current (mA) 6 5 4 3 2 0 -40 -20 3 2 1 0 0 + 20 + 40 + 60 + 80 + 100 Operating Ambient Temperature Ta (°C) 24 4 -40 -20 0 + 20 + 40 + 60 + 80 + 100 Operating Ambient Temperature Ta (°C) MB3769A ■ NOTES ON USE • Take account of common impedance when designing the earth line on a printed wiring board. • Take measures against static electricity. - For semiconductors, use antistatic or conductive containers. - When storing or carrying a printed circuit board after chip mounting, put it in a conductive bag or container. - The work table, tools and measuring instruments must be grounded. - The worker must put on a grounding device containing 250 kΩ to 1 MΩ resistors in series. • Do not apply a negative voltage - Applying a negative voltage of −0.3 V or less to an LSI may generate a parasitic transistor, resulting in malfunction. ■ ORDERING INFORMATION Part number Package Remarks MB3769APF-❏❏❏ 16-pin plastic SOP (FPT-16P-M06) Conventional version MB3769APF-❏❏❏E1 16-pin plastic SOP (FPT-16P-M06) Lead Free version ■ RoHS Compliance Information of Lead (Pb) Free version The LSI products of Fujitsu Microelectronics with “E1” are compliant with RoHS Directive , and has observed the standard of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB) , and polybrominated diphenyl ethers (PBDE) . The product that conforms to this standard is added “E1” at the end of the part number. ■ MARKING FORMAT (Lead Free version) MB3769A XXXX XXX SOP-16 E1 INDEX Lead Free version 25 MB3769A ■ LABELING SAMPLE (Lead free version) Lead free mark JEITA logo MB123456P - 789 - GE1 (3N) 1MB123456P-789-GE1 1000 (3N)2 1561190005 107210 JEDEC logo G Pb QC PASS PCS 1,000 MB123456P - 789 - GE1 2006/03/01 ASSEMBLED IN JAPAN MB123456P - 789 - GE1 1/1 0605 - Z01A 1000 1561190005 Lead Free version 26 MB3769A ■ MB3769APF-❏❏❏E1 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL Item Condition Mounting Method IR (infrared reflow) , Manual soldering (partial heating method) Mounting times 2 times Storage period Before opening Please use it within two years after Manufacture. From opening to the 2nd reflow Less than 8 days When the storage period after opening was exceeded Please processes within 8 days after baking (125 °C, 24H) 5 °C to 30 °C, 70%RH or less (the lowest possible humidity) Storage conditions [Temperature Profile for FJ Standard IR Reflow] (1) IR (infrared reflow) H rank : 260 °C Max 260 °C 255 °C 170 °C to 190 °C (b) RT (a) (a) Temperature Increase gradient (b) Preliminary heating (c) Temperature Increase gradient (d) Actual heating (d’) (e) Cooling (c) (d) (e) (d') : Average 1 °C/s to 4 °C/s : Temperature 170 °C to 190 °C, 60s to 180s : Average 1 °C/s to 4 °C/s : Temperature 260 °C Max; 255 °C or more, 10s or less : Temperature 230 °C or more, 40s or less or Temperature 225 °C or more, 60s or less or Temperature 220 °C or more, 80s or less : Natural cooling or forced cooling Note : Temperature : the top of the package body (2) Manual soldering (partial heating method) Conditions : Temperature 400 °C Max Times : 5 s max/pin 27 MB3769A ■ PACKAGE DIMENSION 16-pin plastic SOP (FPT-16P-M06) 16-pin plastic SOP (FPT-16P-M06) Lead pitch 1.27 mm Package width × package length 5.3 × 10.15 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 2.25 mm MAX Weight 0.20 g Code (Reference) P-SOP16-5.3×10.15-1.27 Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. +0.25 +.010 +0.03 *110.15 –0.20 .400 –.008 0.17 –0.04 +.001 16 .007 –.002 9 *2 5.30±0.30 7.80±0.40 (.209±.012) (.307±.016) INDEX Details of "A" part +0.25 2.00 –0.15 +.010 .079 –.006 1 "A" 8 1.27(.050) 0.47±0.08 (.019±.003) 0.13(.005) (Mounting height) 0.25(.010) 0~8˚ M 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) +0.10 0.10 –0.05 +.004 .004 –.002 (Stand off) 0.10(.004) C 28 2002 FUJITSU LIMITED F16015S-c-4-7 Dimensions in mm (inches). Note: The values in parentheses are reference values. MB3769A MEMO 29 MB3769A MEMO 30 MB3769A MEMO 31 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park, Singapore 556741 Tel: +65-6281-0770 Fax: +65-6281-0220 http://www.fujitsu.com/sg/services/micro/semiconductor/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm.3102, Bund Center, No.222 Yan An Road(E), Shanghai 200002, China Tel: +86-21-6335-1560 Fax: +86-21-6335-1605 http://cn.fujitsu.com/fmc/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road Tsimshatsui, Kowloon Hong Kong Tel: +852-2377-0226 Fax: +852-2376-3269 http://cn.fujitsu.com/fmc/tw All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. Edited Strategic Business Development Dept.