FUJITSU MICROELECTRONICS DATA SHEET DS04-27200-9Ea ASSP For Power Management Applications BIPOLAR Switching Regulator Controller (Switchable between push-pull and single-end functions) MB3759 ■ DESCRIPTION The MB3759 is a control IC for constant-frequency pulse width modulated switching regulators. The IC contains most of the functions required for switching regulator control circuits. This reduces both the component count and assembly work. ■ FEATURES • • • • • • • • Drives a 200 mA load Can be set to push-pull or single-end operation Prevents double pulses Adjustable dead-time Error amplifier has wide common phase input range Built in a circuit to prevent misoperation due to low power supply voltage. Built in an internal 5 V reference voltage with superior voltage reduction characteristics One type of package (SOP-16pin : 1 type) ■ Application • Power supply module • Industrial Equipment • AC/DC Converter etc. Copyright©1994-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2006.5 MB3759 ■ PIN ASSIGNMENT (TOP VIEW) +IN1 1 16 +IN2 −IN1 2 15 −IN2 FB 3 14 VREF DT 4 13 OC CT 5 12 VCC RT 6 11 C2 GND 7 10 E2 C1 8 9 E1 (FPT-16P-M06) ■ BLOCK DIAGRAM Output control OC 13 RT 6 CT 5 Dead time control DT Q 8 C1 9 E1 11 C2 4 10 E2 Error amp 1 + A1 − +IN2 16 + −IN2 15 − A2 Error amp 2 2 T = 0.2 V +IN1 1 −IN1 2 Feed back Q OSC FB 3 PMW comparator Reference regurator 12 VCC 14 VREF 7 GND MB3759 ■ ABSOLUTE MAXIMUM RATINGS Parameter Symbol Condition Power supply voltage VCC Collector output voltage Rating Unit Min Max — — 41 V VCE — — 41 V Collector output current ICE — — 250 mA Amplifier input voltage VI — — VCC + 0.3 V PD Ta ≤ +25 °C — 620 mW Ta — −30 +85 °C +125 °C Power dissipation SOP * Operating ambient temperature Storage temperature Tstg — −55 *: When mounted on a 4 cm square double-sided epoxy circuit board (1.5 mm thickness) The ceramic circuit board is 3 cm x 4 cm (0.5 mm thickness) WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Min Typ Max Unit Power supply voltage VCC 7 15 32 V Collector output voltage VCE — — 40 V Collector output current ICE 5 — 200 mA Amplifier input voltage VIN −0.3 0 to VR VCC − 2 V FB sink current ISINK — — 0.3 mA ISOURCE — — 2 mA Reference section output current IREF — 5 10 mA Timing resistor RT 1.8 30 500 kΩ Timing capacitor CT 470 1000 106 pF fosc 1 40 300 kHz Ta −30 +25 +85 °C FB source current Oscillator frequency Operating ambient temperature Note: Values are for standard derating conditions. Give consideration to the ambient temperature and power consumption if using a high supply voltage. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. 3 MB3759 ■ ELECTRICAL CHARACTERISTICS (VCC = 15 V, Ta = +25 °C) Parameter Reference section Oscillator section Symbol IO = 1 mA Value Unit Min Typ Max 4.75 5.0 5.25 V Output voltage VREF Input regulation ∆VR(IN) 7 V ≤ VCC ≤ 40 V, Ta = +25 °C — 2 25 mV Load regulation ∆VR(LD) 1 mA ≤ IO ≤ 10 mA, Ta = +25 °C — −1 −15 mV Temperature stability ∆VR/∆T −20 °C ≤ Ta ≤ + 85 °C — ±200 ±750 µV/°C Short circuit output current ISC — 15 40 — mA Reference lockout voltage — — — 4.3 — V Reference hysteresis voltage — — — 0.3 — V Oscillator frequency fosc RT = 30 kΩ, CT = 1000 pF 36 40 44 kHz Standard deviation of frequency — RT = 30 kΩ, CT = 1000 pF — ±3 — % Frequency change with voltage — 7 V ≤ VCC ≤ 40 V, Ta = +25 °C — ±0.1 — % ∆fosc/∆T −20 °C ≤ Ta ≤ +85 °C — ±0.01 — %/°C Input bias current ID 0 ≤ VI ≤ 5.25 V — −2 −10 µA Maximum duty cycle (Each output) — VI = 0 40 45 — % Frequency change with temperature Dead-time control section Condition Input threshold voltage 0% duty cycle VDO — — 3.0 3.3 V Max duty cycle VDM — 0 — — V (Continued) 4 MB3759 (Continued) (VCC = 15 V, Ta = +25 °C) Parameter Error amplifier section Symbol Value Min Typ Max Unit Input offset voltage VIO VO (pin3) = 2.5 V — ±2 ±10 mV Input offset current IIO VO (pin3) = 2.5 V — ±25 ±250 nA Input bias current II VO (pin3) = 2.5 V — −0.2 −1.0 µA −0.3 — VCC − 2 V Common-mode input voltage VCM 7 V ≤ VCC ≤ 40 V Open-loop voltage amplification AV 0.5 V ≤ VO ≤ 3.5 V 70 95 — dB Unity-gain bandwidth BW AV = 1 — 800 — kHz VCC = 40 V 65 80 — dB ISINK -5 V ≤ VID ≤ -15 mV, VO = 0.7 V 0.3 0.7 — mA ISOURCE 15 mV ≤ VID ≤ 5V, VO = 3.5 V −2 −10 — mA Common-mode rejection ratio Output sink ISINK current (pin 3) ISOURCE Output section Condition CMR Collector leakage current ICO VCE = 40 V, VCC = 40 V — — 100 µA Emitter leakage current IEO VCC = VC = 40 V, VE = 0 — — −100 µA Collector emitter saturation voltage Emitter grounded VSAT(C) VE = 0, IC = 200 mA — 1.1 1.3 V Emitter follower VSAT(E) VC = 15 V, IE = −200 mA — 1.5 2.5 V Output control input current IOPC VI = VREF — 1.3 3.5 mA Input threshold voltage VTH 0% Duty — 4 4.5 V Input sink current (pin 3) ISINK VO (pin3) = 0.7 V 0.3 0.7 — mA Power supply current ICC V(pin4) = 2 V, Refer to “■ TEST CIRCUIT” — 8 — mA Standby current ICCQ V(pin6) = VREF, I/O open — 7 12 mA PWM comparator section Rise time Switching characteristics Fall time Rise time Fall time Emitter grounded tR RL = 68 Ω — 100 200 ns tF RL = 68 Ω — 25 100 ns Emitter follower tR RL = 68 Ω — 100 200 ns tF RL = 68 Ω — 40 100 ns 5 MB3759 ■ TEST CIRCUIT VCC = 15V 150 Ω /2 W 150 Ω /2 W VD TEST INPUT DT VC 30 kΩ 1000 pF VCC C1 FB E1 RT C2 OUTPUT 1 OUTPUT 2 CT E2 +IN1 −IN1 +IN2 −IN2 VREF OC GND 50 kΩ ■ OPERATING TIMING = 3.0 V Voltage at CT VC VD =0 V OUTPUT 1 ON ON ON ON OUTPUT 2 ON 6 ON ON MB3759 ■ OSCILLATION FREQUENCY f OSC = 1.2 RT × CT RT : kΩ CT : µF fosc : kHZ ■ OUTPUT LOGIC TABLE Input (Output Control) Output State GND Single-ended or parallel output VREF Push-pull 7 MB3759 ■ TYPICAL CHARACTERISTICS Reference voltage vs. power supply voltage Reference voltage change vs. operating ambient temperature 10 5 VREF 4 5 ∆VREF 3 0 2 −5 1 0 0 10 20 30 40 Power supply voltage VCC (V) Reference voltage change ∆VREF (mV) IO = 1 mA Reference voltage change ∆VREF (mV) Reference voltage VREF (V) 6 VCC = 15 V IO = 1 mA 0 −10 −20 −30 −25 +25 0 +50 +75 +100 Operating ambient temperature Ta (°C) Maximum duty vs. dead time control voltage Oscillator frequency vs. RT, CT Oscillator frequency fOSC (HZ) 500 k VCC =15 V 200 k 100 k CT = 470 pF 50 k 1000 pF 20 k 10 k 0.01µF 5k 0.1µF 2k Maximum duty TON / T (%) 1M 0 VCC = 15 V Ta = 0°C CT = 1000 pF RT = 30 kΩ Ta = +25°C 10 Ta = +70°C 20 30 40 50 1k 2k 5 k 10 k 20 k 100 k 200 k 500 k RT (Ω) 0 1 2 3 Dead time control voltage VD (V) (Continued) 8 MB3759 Open loop voltage amplification vs. frequency 80 0.8 Low - level output voltage VOL (V) Open loop voltage amplification AV (dB) VCC = 15 V ∆VO = 3 V 90 70 60 50 40 30 20 10 0 10 5 Ta = 0°C Ta = +70˚C 0.6 Ta = +70°C 0.4 3 Ta = 0°C Ta = +25°C VOL 0.2 1k 10 k 100 k 2 1 0 0 1M 0.5 5 Ta = 0°C 0.8 Ta = +70°C 0.6 0.4 50 100 150 Collector output current IC (mA) 200 Emitter saturation voltage VSAT (E) (V) VCC = 15 V Ta = +25°C 1.5 15 IOL IOH Emitter saturation voltage vs. emitter output current 1.2 1.0 1.0 10 Output current IOL, IOH (mA) Collector saturation voltage vs. collector output current Collector saturation voltage VSAT ( C ) (V) 4 VOH Frequency f (Hz) 0 VCC = 15 V Ta = +25°C 0 100 High - level output voltage VOH (V) Output voltage vs. output current (feed back terminal) 100 1.8 VCC = 15 V Ta = 0°C 1.6 Ta = +25°C 1.4 Ta = +70°C 1.2 1.0 0 50 100 150 200 Emitter output current IE (mA) (Continued) 9 MB3759 Output voltage vs. reference voltage Power supply current vs. power supply voltage 6 10 Power supply current ICC ,ICCQ (mA) Output voltage VOUT (V) (Continued) 5 5V 4 400 Ω 3 VOUT 8 2 1 0 0 1 2 3 4 ICC 7.5 ICCQ 5 2.5 0 6 5 0 Reference voltage VREF (V) Power dissipation PD (mW) (200, 10) 800 (100, 10) (200, 5) (100, 5) 600 (100, 0) 400 (0, 0) 200 10 20 30 40 Power supply voltage VCC (V) 10 40 1000 800 600 SOP 400 200 0 0 0 30 Power dissipation vs. Operating ambient temperature Power dissipation PD (mW) (IO, IR) (mA) Ta = +25°C 20 Power supply voltage VCC (V) Power dissipation vs. power supply voltage 1000 10 0 +20 +40 +60 +80 +100 Operating ambient temperature Ta (°C) MB3759 ■ BASIC OPERATION Switching regulators can achieve a high level of efficiency. This section describes the basic principles of operation using a chopper regulator as an example. As shown in the diagram, diode D provides a current path for the current through inductance L when Q is off. Transistor Q performs switching and is operated at a frequency that provides a stable output. As the switching element is saturated when Q is on and cutoff when Q is off, the losses in the switching element are much less than for a series regulator in which the pass transistor is always in the active state. While Q is conducting, the input voltage VIN is supplied to the LC circuit and when Q is off, the energy stored in L is supplied to the load via diode D. The LC circuit smooths the input to supply the output voltage. The output voltage VO is given by the following equation. VO = Ton Ton VIN = VIN Ton + Toff T Q : ON L Q VIN D Q : OFF C VO RL Q: Switching element D: Flywheel diode As indicated by the equation, variation in the input voltage is compensated for by controlling the duty cycle (Ton/ T). If VIN drops, the control circuit operates to increase the duty cycle so as to keep the output voltage constant. The current through L flows from the input to the output when Q is on and through D when Q is off. Accordingly, the average input current IIN is the product of the output current and the duty cycle for Q. IIN = Ton IO T The theoretical conversion efficiency if the switching loss in Q and loss in D are ignored is as follows. PO × 100 (%) PIN V O × IO = × 100 VIN × IIN VIN × IO × Ton / T = × 100 VIN × IO × Ton / T = 100 (%) η= The theoretical conversion efficiency is 100%. In practice, losses occur in the switching element and elsewhere, and design decisions to minimize these losses include making the switching frequency as low as practical and setting an optimum ratio of input to output voltage. 11 MB3759 ■ SWITCHING ELEMENT 1. Selection of the Switching Transistor It can be said that the success or otherwise of a switching regulator is determined by the choice of switching transistor. Typically, the following parameters are considered in selecting a transistor. • Withstand voltage • Current • Power • Speed For the withstand voltage, current, and power, it is necessary to determine that the area of safe operation (ASO) of the intended transistor covers the intended range for these parameters. The speed (switching speed: rise time tr, storage time tstg, and fall time tf) is related to the efficiency and also influences the power. The figures show the transistor load curve and VCE - IC waveforms for chopper and inverter-type regulators. The chopper regulator is a relatively easy circuit to deal with as the diode clamps the collector. A peak can be seen immediately after turn-on. However, this is due to the diode and is explained later. In an inverter regulator, the diodes on the secondary side act as a clamp. Viewed from the primary side, however, a leakage inductance is present. This results in an inductive spike which must be taken account of as it is added to double the VIN voltage. chopper regulator IN VCE IC inverter regulator IN L VO D1 L Q VO C D C D2 IC IC on on off VCE off VCE VIN VIN 2 VIN VCE Ton VCE Ton 2 VIN VIN t t IC IC Ton t 12 Ton t MB3759 The figure below shows an example of the ASO characteristics for a forward-biased power transistor (2SC3058A) suitable for switching. Check that the ASO characteristics for the transistor you intend to use fully covers the load curve. Next, check whether the following conditions are satisfied. If so, the transistor can be expected to perform the switching operation safely. • The intended ON time does not exceed the ON-time specified for the ASO characteristic. • The OFF-time ASO characteristic satisfies the intended operation conditions. • Derating for the junction temperature has been taken into account. For a switching transistor, the junction temperature is closely related to the switching speed. This is because the switching speed becomes slower as the temperature increases and this affects the switching losses. Forward-biased area of safe operation single pulse 2SC3058A (450 V, 30 A) 50 TC = +25˚C Single pulse IC (Pulse) max. IC max. Pw µs 10 5 s 1m ms Collector current IC (A) . 10 0 .C 50 D = 20 2 1 0.5 0.2 0.1 0.05 5 10 20 50 100 200 500 1000 Collector - emitter voltage VCE (V) 2. Selecting the Diode Consideration must be given to the switching speed when selecting the diode. For chopper regulators in particular, the diode affects the efficiency and noise characteristics and has a big influence on the performance of the switching regulator. If the reverse recovery time of the diode is slower than the turn-on time of the transistor, an in-rush current of more than twice the load current occurs resulting in noise (spikes) and reduced efficiency. As a rule for diode selection, use a diode with a reverse recovery time trr that is sufficiently faster than the transistor tr. 13 MB3759 ■ APPLICATION IN PRACTICAL CIRCUITS 1. Error Amplifier Gain Adjustment Take care that the bias current does not become large when connecting an external circuit to the FB pin (pin 3) for adjusting the amplifier gain. As the FB pin (pin 3) is biased to the low level by a sink current, the duty cycle of the output signal will be affected if the current from the external circuit is greater than the amplifier can sink. The figure below shows a suitable circuit for adjusting the gain. It is very important that you avoid having a capacitive load connected to the output stage as this will affect the response time. OUT R1 + Vo VREF − RIN R2 RF 2. Synchronized Oscillator Operation The oscillator can be halted by connecting the CT pin (pin 5) to the GND pin (pin 7). If supplying the signal externally, halt the internal oscillator and input to the CT pin (pin 5). Using this method, multiple ICs can be used together in synchronized operation. For synchronized operation, set one IC as the master and connect the other ICs as shown in the diagram. Slave Master RT 14 CT VREF RT CT MB3759 3. Soft Start A soft start function can be incorporated by using the dead-time control element (DT) pin (pin 4). VREF VREF R2 VR VD = R1+R2 R1 Cd DT DT R2 Rd Setting the dead-time Incorporating soft start When the power is turned on, Cd is not yet charged and the DT input is pulled to the VREF pin (pin 14) causing the output transistor to turn off. Next, the input voltage to the DT pin (pin 4) drops in accordance with the Cd, Rd constant causing the output pulse width to increase steadily, providing stable control circuit operation. If you wish to use both dead-time and softstart, combine these in an OR configuration. VREF Cd R1 DT Rd R2 4. Output Current Limiting (Fallback system using a detection resistor inserted on the output side) (1) Typical example VREF RS VO IO VO R3 VO1 R1 + VIO D − R4 R5 R2 0 GND 0 IL3 IL2 IL1 IO 15 MB3759 • Initial limit current IL1 The condition for VO is: VO > R4 VREF R3 + R4 As the diode is reverse biased, R1 VO – VIO R1 + R2 VIO R1 VO ∴IL1 = – RS R1 + R2 RS RS IL1 = Eq. (1) (where R2 >> R1) VIO is the input offset voltage to the op-amp (-10 mV ≤ VIO ≤ +10 mV) and this causes the variation in IL. Accordingly, if for example the variation in IL is to be limited to ±10 %, using equation (1) and only considering the variation in the offset voltage gives the following: IO 1 VIO R1 ( R2 >> R1 ) ( VO + VEE ) − RS R1 + R2 RS = This indicates a setting of 100 mV or more is required. • Polarity change point IL2 As this is the point where the diode becomes forward biased, it can be calculated by substituting [R4/(R3+R4) VREF - VD] for VO in equation (where VD is the forward voltage of the diode). IL2 = VIO R1 R4 / (R3 + R4) · VREF – VD – R1 + R2 RS RS • Final limit current IL3 The limit current for VO = 0 when R2 >> R1 is the point where the voltages on either side of RS and on either side of R5 are biased. R4R5 VREF − R3R5 VD − R4R5 VD − VIO R3R4 + R3R5 + R4R5 VIO 1 1 R4 (2) Eq. ( VREF − VD ) − ∴IL3 = RS RS 1 + (R 3 // R 4) / R5 R3 + R4 RS IL3 = R3//R4 is the resistance formed by R3 and R4 in parallel (R3R4/(R3 + R4)). When R3//R4 << R5, equation (2) becomes: IL3 C = VIO 1 R4 ( VREF – VD ) – RS RS R3 + R4 In addition to determining the limit current IL3 for VO = 0, R3, R4, R5, and diode D also operate as a starter when the power is turned on. • Starter circuit The figure below shows the case when the starter circuit formed by R3, R4, R5, and D is not present. The output current IO after the operation of the current limiting circuit is: IO = VIO VO R1 − RS R1 + R2 RS When VO = 0 such as when the power is turned on, the output current IO = -VI O / RS and, if the offset voltage VIO is positive, the output current is limited to being negative and therefore the output voltage does not rise. Accordingly, if using a fallback system with a detection resistor inserted in the output, always include a starter circuit, expect in the cases described later. 16 MB3759 VO IO RS VO VIO > 0 R1 VIO < 0 VO + VIO − R2 GND 0 IO IL1 (2) Example that does not use a diode VREF VO IO RS VO R3 R1 R4 > R1+R2 R3+R4 VO R1 + VIO − R1 R4 < R1+R2 R3+R4 R4 R2 0 GND 0 IL1 IO The output current IO after current limiting is: IO = 1 R1 R4 R4 [( – VREF – VIO ] (R2 >> R1) ) VO + RS R1 + R2 R3 + R4 R3 + R4 In this case, a current flows into the reference voltage source via R3 and R4 if VO > VREF. To maintain the stability of the reference voltage, design the circuit such that this does not exceed 200 µA. 17 MB3759 (3) When an external stabilized negative power supply is present RS IO VO VO VO R1 + VIO VO* − R2 −VEE 0 0 I L5 I L1 IO The output current IO after current limiting is: IO = 1 VIO R1 (VO + VEE) – (R2 >>R1) RS R1 + R2 RS If the output is momentarily shorted, VO* goes briefly negative. In this case, set the voltage across R1 to 300 mV or less to ensure that a voltage of less than -0.3 V is not applied to the op-amp input. 18 MB3759 5. Example Power Supply Voltage Supply Circuit (1) Supplied via a Zener diode VIN VIN VZ R VCC C VZ VCC MB3759 MB3759 VCC = VIN − VZ VCC = VZ (2) Supplied via a three-terminal regulator Three-terminal regulator AC VCC MB3759 6. Example Protection Circuit for Output Transistor Due to its monolithic IC characteristics, applying a negative voltage greater than the diode voltage ( =: 0.5 V) to the substrate (pin 7) of the MB3759 causes a parasitic effect in the IC which can result in misoperation. Accordingly, the following measures are required if driving a transformer or similar directly from the output transistor of the IC. (1) Protect the output transistor from the parasitic effect by using a Schottky barrier diode. 8 9 11 SBD 10 19 MB3759 (2) Provide a bias at the anode-side of the diode to clamp the low level side of the transistor. 8 14 11 7.5 kΩ = 0.7 V 1.2 kΩ (3) Drive the transformer via a buffer transistor. VCC 8 9 20 0.1 µF MB3759 7. Typical Application (1)Chopper regulator 1Ω AC 100 V + 15 V + + 24 V 2.5 A 1 mH 50 Ω 2 kΩ 10 kΩ 16 kΩ VCC 10 kΩ 100 kΩ 0.22 µF 2.2 kΩ 5.6 kΩ 10 µF + 47 kΩ 5.1 kΩ 300 Ω 5.1 kΩ FB E1 −IN1 C1 +IN1 C2 VREF E2 −IN2 RT + +IN2 CT DT OC GND 2200 µF 20 kΩ 2200 pF 5 kΩ 0.1 Ω 21 MB3759 (2) Inverter regulator AC 100 V + 15 V + + A 24 V 2.5 A 33 Ω + 100Ω 0.1 Ω 100Ω 33 Ω B A 10 kΩ VCC 10 kΩ 16 kΩ 100 kΩ 0.22 µF 2.2 kΩ 5.6 kΩ + 10 µF 47 kΩ 5.1 kΩ FB E1 −IN1 C1 +IN1 C2 VREF E2 −IN2 RT +IN2 CT OC DT 20 kΩ GND 300 Ω 5.1 kΩ 5 kΩ B 22 REF 2200 pF 2200 µF MB3759 ■ NOTES ON USE • Take account of common impedance when designing the earth line on a printed wiring board. • Take measures against static electricity. - For semiconductors, use antistatic or conductive containers. - When storing or carrying a printed circuit board after chip mounting, put it in a conductive bag or container. - The work table, tools and measuring instruments must be grounded. - The worker must put on a grounding device containing 250 kΩ to 1 MΩ resistors in series. • Do not apply a negative voltage - Applying a negative voltage of −0.3 V or less to an LSI may generate a parasitic transistor, resulting in malfunction. ■ ORDERING INFORMATION Part number Package Remarks MB3759PF-❏❏❏ 16-pin plastic SOP (FPT-16P-M06) Conventional version MB3759PF-❏❏❏E1 16-pin plastic SOP (FPT-16P-M06) Lead Free version ■ RoHS Compliance Information of Lead (Pb) Free version The LSI products of Fujitsu Microelectronics with “E1” are compliant with RoHS Directive , and has observed the standard of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB) , and polybrominated diphenyl ethers (PBDE) . The product that conforms to this standard is added “E1” at the end of the part number. ■ MARKING FORMAT (Lead Free version) MB3759 XXXX XXX E1 SOP-16 INDEX Lead Free version 23 MB3759 ■ LABELING SAMPLE (Lead free version) lead-free mark JEITA logo MB123456P - 789 - GE1 (3N) 1MB123456P-789-GE1 1000 (3N)2 1561190005 107210 JEDEC logo G Pb QC PASS PCS 1,000 MB123456P - 789 - GE1 2006/03/01 ASSEMBLED IN JAPAN MB123456P - 789 - GE1 1/1 0605 - Z01A 1561190005 Lead Free version 24 1000 MB3759 ■ MB3759PF-❏❏❏E1 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL Item Condition Mounting Method IR (infrared reflow) , Manual soldering (partial heating method) Mounting times 2 times Storage period Before opening Please use it within two years after Manufacture. From opening to the 2nd reflow Less than 8 days When the storage period after opening was exceeded Please processes within 8 days after baking (125 °C, 24H) 5 °C to 30 °C, 70%RH or less (the lowest possible humidity) Storage conditions [Temperature Profile for FJ Standard IR Reflow] (1) IR (infrared reflow) H rank : 260 °C Max 260 °C 255 °C 170 °C to 190 °C (b) RT (a) (a) Temperature Increase gradient (b) Preliminary heating (c) Temperature Increase gradient (d) Actual heating (d’) (e) Cooling (c) (d) (e) (d') : Average 1 °C/s to 4 °C/s : Temperature 170 °C to 190 °C, 60s to 180s : Average 1 °C/s to 4 °C/s : Temperature 260 °C Max; 255 °C or more, 10s or less : Temperature 230 °C or more, 40s or less or Temperature 225 °C or more, 60s or less or Temperature 220 °C or more, 80s or less : Natural cooling or forced cooling Note : Temperature : the top of the package body (2) Manual soldering (partial heating method) Conditions : Temperature 400 °C Max Times : 5 s max/pin 25 MB3759 ■ PACKAGE DIMENSION 16-pin plastic SOP (FPT-16P-M06) 16-pin plastic SOP (FPT-16P-M06) Lead pitch 1.27 mm Package width × package length 5.3 × 10.15 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 2.25 mm MAX Weight 0.20 g Code (Reference) P-SOP16-5.3×10.15-1.27 Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. +0.25 +.010 +0.03 *110.15 –0.20 .400 –.008 0.17 –0.04 +.001 16 .007 –.002 9 *2 5.30±0.30 7.80±0.40 (.209±.012) (.307±.016) INDEX Details of "A" part +0.25 2.00 –0.15 +.010 .079 –.006 1 "A" 8 1.27(.050) 0.47±0.08 (.019±.003) 0.13(.005) (Mounting height) 0.25(.010) 0~8˚ M 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) +0.10 0.10 –0.05 +.004 .004 –.002 (Stand off) 0.10(.004) C 26 2002 FUJITSU LIMITED F16015S-c-4-7 Dimensions in mm (inches). Note: The values in parentheses are reference values. MB3759 MEMO 27 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park, Singapore 556741 Tel: +65-6281-0770 Fax: +65-6281-0220 http://www.fujitsu.com/sg/services/micro/semiconductor/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm.3102, Bund Center, No.222 Yan An Road(E), Shanghai 200002, China Tel: +86-21-6335-1560 Fax: +86-21-6335-1605 http://cn.fujitsu.com/fmc/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road Tsimshatsui, Kowloon Hong Kong Tel: +852-2377-0226 Fax: +852-2376-3269 http://cn.fujitsu.com/fmc/tw All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. 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Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. Edited Strategic Business Development Dept.