S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit (16/8 M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory S29WS-N MirrorBitTM Flash Family Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information, Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions. Publication Number S29WS-N_00 Revision I Amendment 2 Issue Date November 10, 2006 Data Sheet (Advan ce Infor m a tio n) Notice On Data Sheet Designations Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. In all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. The following descriptions of Spansion data sheet designations are presented here to highlight their presence and definitions. Advance Information The Advance Information designation indicates that Spansion Inc. is developing one or more specific products, but has not committed any design to production. Information presented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. Spansion Inc. therefore places the following conditions upon Advance Information content: “This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.” Preliminary The Preliminary designation indicates that the product development has progressed such that a commitment to production has taken place. This designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the manufacturing process that occur before full production is achieved. Changes to the technical specifications presented in a Preliminary document should be expected while keeping these aspects of production under consideration. Spansion places the following conditions upon Preliminary content: “This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications.” Combination Some data sheets contain a combination of products with different designations (Advance Information, Preliminary, or Full Production). This type of document distinguishes these products and their designations wherever necessary, typically on the first page, the ordering information page, and pages with the DC Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first page refers the reader to the notice on this page. Full Production (No Designation on Document) When a product has been in production for a period of time such that no changes or only nominal changes are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include those affecting the number of ordering part numbers available, such as the addition or deletion of a speed option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following conditions to documents in this category: “This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur.” Questions regarding these document designations may be directed to your local sales office. ii S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit (16/8 M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory Data Sheet (Advance Information) General Description The Spansion S29WS256/128 are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption. Distinctive Characteristics Single 1.8 V read/program/erase (1.70–1.95 V) Hardware (WP#) protection of top and bottom sectors 110 nm MirrorBit™ Technology Dual boot sector configuration (top and bottom) Simultaneous Read/Write operation with zero latency Offered Packages 32-word Write Buffer WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm) Sixteen-bank architecture consisting of 16/8 Mwords for WS256N/128N, respectively Low VCC write inhibit Four 16 Kword sectors at both top and bottom of memory array Persistent and Password methods of Advanced Sector Protection 254/126 64 Kword sectors (WS256N/128N) Write operation status bits indicate program and erase operation completion Programmable linear (8/16/32) with or without wrap around and continuous burst read modes Suspend and Resume commands for Program and Erase operations Secured Silicon Sector region consisting of 128 words each for factory and customer Unlock Bypass program command to reduce programming time 20-year data retention (typical) Cycling Endurance: 100,000 cycles per sector (typical) Synchronous or Asynchronous program operation, independent of burst control register settings RDY output indicates data available to system ACC input pin to reduce factory programming time Command set compatible with JEDEC (42.4) standard Support for Common Flash Interface (CFI) Performance Characteristics Read Access Times Speed Option (MHz) Current Consumption (typical values) 80 66 54 Continuous Burst Read @ 80 MHz 38 mA 80 80 80 Simultaneous Operation (asynchronous) 50 mA Max. Synch. Burst Access, ns (tBACC) 9 11.2 13.5 Program (asynchronous) 19 mA Max. Asynch. Access Time, ns (tACC) 80 80 80 Erase (asynchronous) 19 mA Standby Mode (asynchronous) 20 µA Max. Synch. Latency, ns (tIACC) Max. Asynch. Page Access Time, ns (tPACC) 20 20 20 Max CE# Access Time, ns (tCE) 80 80 80 Max OE# Access Time, ns (tOE) 13.5 13.5 13.5 Publication Number S29WS-N_00 Revision I Typical Program & Erase Times Single Word Programming 40 µs Effective Write Buffer Programming (VCC) Per Word 9.4 µs Effective Write Buffer Programming (VACC) Per Word 6 µs Sector Erase (16 Kword Sector) 150 ms Sector Erase (64 Kword Sector) 600 ms Amendment 2 Issue Date November 10, 2006 This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice. Data Sheet (Advan ce Infor m a tio n) Contents General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 1. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2. Input/Output Descriptions & Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4. Physical Dimensions/Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1 Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2 Special Handling Instructions for FBGA Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3 MCP Look-ahead Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5. Additional Resources. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6. Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6.1 Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7. Device Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1 Device Operation Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2 Asynchronous Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.3 Page Read Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.4 Synchronous (Burst) Read Mode & Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 Autoselect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.6 Program/Erase Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7 Simultaneous Read/Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.8 Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.9 Handshaking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.10 Hardware Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.11 Software Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 14 15 16 21 23 40 41 41 41 42 8. Advanced Sector Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.1 Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.2 Persistent Protection Bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3 Dynamic Protection Bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.4 Persistent Protection Bit Lock Bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5 Password Protection Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.6 Advanced Sector Protection Software Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7 Hardware Data Protection Methods. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 44 45 46 46 46 48 48 9. Power Conservation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.1 Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.2 Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.3 Hardware RESET# Input Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.4 Output Disable (OE#). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 49 49 49 49 10. Secured Silicon Sector Flash Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.1 Factory Secured Silicon Sector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.2 Customer Secured Silicon Sector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3 Secured Silicon Sector Entry/Exit Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 50 51 51 11. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.2 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 53 54 54 S29WS-N MirrorBitTM Flash Family 7 7 7 9 S29WS-N_00_I2 November 10, 2006 D at a 11.4 11.5 11.6 11.7 11.8 S hee t (Adva nce In for m ation) Key to Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics (CMOS Compatible) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 55 55 56 57 12. Appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 12.1 Common Flash Memory Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 13. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 Tables Table 2.1 Table 6.1 Table 6.2 Table 7.1 Table 7.2 Table 7.3 Table 7.4 Table 7.5 Table 7.6 Table 7.7 Table 7.8 Table 7.9 Table 7.10 Table 7.11 Table 7.12 Table 7.13 Table 7.14 Table 7.15 Table 7.16 Table 7.17 Table 7.18 Table 7.19 Table 7.20 Table 7.21 Table 7.22 Table 7.23 Table 7.24 Table 7.25 Table 7.26 Table 7.27 Table 8.1 Table 8.2 Table 10.1 Table 10.2 Table 10.3 Table 10.4 Table 11.1 Table 11.2 Table 12.1 Table 12.2 Table 12.3 Table 12.4 Table 12.5 Input/Output Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 S29WS256N Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 S29WS128N Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Device Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Word Selection within a Page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Address Latency (S29WS256N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Address Latency (S29WS128N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Address/Boundary Crossing Latency (S29WS256N @ 80MHz) . . . . . . . . . . . . . . . . . . . . . .17 Address/Boundary Crossing Latency (S29WS256N @ 66 MHz) . . . . . . . . . . . . . . . . . . . . . .17 Address/Boundary Crossing Latency (S29WS256N @ 54MHz) . . . . . . . . . . . . . . . . . . . . . .17 Address/Boundary Crossing Latency (S29WS128N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Burst Address Groups . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Autoselect Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 Autoselect Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Autoselect Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Single Word Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 Write Buffer Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Sector Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 Chip Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31 Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 Erase Resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 Program Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 Program Resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 Unlock Bypass Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 Unlock Bypass Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 Unlock Bypass Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 DQ6 and DQ2 Indications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38 Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 Sector Protection Schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48 Secured Silicon Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 Secured Silicon Sector Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 Secured Silicon Sector Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 Secured Silicon Sector Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 Test Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 Synchronous Wait State Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 Memory Array Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73 CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .76 System Interface String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .76 Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .77 Primary Vendor-Specific Extended Query . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .77 November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 3 Data Sheet (Advan ce Infor m a tio n) Figures Figure 4.1 Figure 4.2 Figure 4.3 Figure 7.1 Figure 7.2 Figure 7.3 Figure 7.4 Figure 7.5 Figure 7.6 Figure 8.1 Figure 8.2 Figure 8.3 Figure 11.1 Figure 11.2 Figure 11.3 Figure 11.4 Figure 11.5 Figure 11.6 Figure 11.7 Figure 11.8 Figure 11.9 Figure 11.10 Figure 11.11 Figure 11.12 Figure 11.13 Figure 11.14 Figure 11.15 Figure 11.16 Figure 11.17 Figure 11.18 Figure 11.19 Figure 11.20 Figure 11.21 Figure 11.22 Figure 11.23 Figure 11.24 Figure 11.25 Figure 11.26 Figure 11.27 Figure 11.28 Figure 11.29 Figure 12.1 4 84-ball Fine-Pitch Ball Grid Array (S29WS256N, S29WS128N) . . . . . . . . . . . . . . . . . . . . . . . 8 VBH084—84-ball Fine-Pitch Ball Grid Array (FBGA) 8 x 11.6 mm MCP Compatible Package 9 MCP Look-ahead Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Synchronous/Asynchronous State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Synchronous Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Single Word Program. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Write Buffer Programming Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Sector Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Write Operation Status Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Advanced Sector Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 PPB Program/Erase Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Lock Register Program Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Test Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 Input Waveforms and Measurement Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 VCC Power-up Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 CLK Characterization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 CLK Synchronous Burst Mode Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 8-word Linear Burst with Wrap Around . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 8-word Linear Burst without Wrap Around . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 Linear Burst with RDY Set One Cycle Before Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 Asynchronous Mode Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Four-Word Page-Mode Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Reset Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Chip/Sector Erase Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Program Operation Timing Using AVD# . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 Program Operation Timing Using CLK in Relationship to AVD# . . . . . . . . . . . . . . . . . . . . . . 65 Accelerated Unlock Bypass Programming Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Data# Polling Timings (During Embedded Algorithm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 Toggle Bit Timings (During Embedded Algorithm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 Synchronous Data Polling Timings/Toggle Bit Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Conditions for Incorrect DQ2 Polling During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . 67 Correct DQ2 Polling during Erase Suspend #1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Correct DQ2 Polling during Erase Suspend #2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 Correct DQ2 Polling during Erase Suspend #3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 Latency with Boundary Crossing when Frequency > 66 MHz . . . . . . . . . . . . . . . . . . . . . . . . 69 Latency with Boundary Crossing into Program/Erase Bank . . . . . . . . . . . . . . . . . . . . . . . . . 70 Example of Wait States Insertion. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 Back-to-Back Read/Write Cycle Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Sector Protection Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 1. S hee t (Adva nce In for m ation) Ordering Information The order number is formed by a valid combinations of the following: S29WS 256 N 0S BA W 01 0 Packing Type 0 = Tray (standard; (Note 1)) 2 = 7-inch Tape and Reel 3 = 13-inch Tape and Reel Model Number (Note 3) (DYB Protect/Unprotect After Power-up) 01 = DYB Unprotect 11 = DYB Protect Temperature Range (Note 3) W = Wireless (–25°C to +85°C) Package Type & Material Set BA = Very Thin Fine-Pitch BGA, Lead (Pb)-free Compliant Package BF = Very Thin Fine-Pitch BGA, Lead (Pb)-free Package Speed Option (Burst Frequency) 0S = 80 MHz 0P = 66 MHz 0L = 54 MHz Process Technology N = 110 nm MirrorBit™ Technology Flash Density 256= 256 Mb 128= 128 Mb Product Family S29WS =1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 1.1 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. S29WS-N Valid Combinations (1), (2), (3) Base Ordering Part Number Product Status Speed Option Package Type, Material, & Temperature Range Model Number Packing Type DYB Power Up State 01 S29WS256N S29WS128N Preliminary Preliminary 0S, 0P, 0L 0S, 0P, 0L BAW (Lead (Pb)-free Compliant), BFW (Lead (Pb)-free) 11 01 Package Type (2) Unprotect 0, 2, 3 (1) 11 Protect Unprotect 8 mm x 11.6 mm 84-ball MCP-Compatible Protect Notes: 1. Type 0 is standard. Specify other options as required. 2. BGA package marking omits leading “S29” and packing type designator from ordering part number. 3. For other boot option contact your local sales office. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 5 Data 2. Sheet (Advan ce Infor m a tio n) Input/Output Descriptions & Logic Symbol Table 2.1 identifies the input and output package connections provided on the device. Table 2.1 Input/Output Descriptions Symbol Type A23–A0 Input DQ15–DQ0 I/O Description Address lines for WS256N (A22-A0 for WS128). Data input/output. CE# Input Chip Enable. Asynchronous relative to CLK. OE# Input Output Enable. Asynchronous relative to CLK. WE# Input Write Enable. VCC Supply VSS I/O NC No Connect RDY Output CLK Input Device Power Supply. Ground. Not connected internally. Ready. Indicates when valid burst data is ready to be read. Clock Input. In burst mode, after the initial word is output, subsequent active edges of CLK increment the internal address counter. Address Valid. Indicates to device that the valid address is present on the address inputs. When low during asynchronous mode, indicates valid address; when low during burst mode, causes starting address to be latched at the next active clock edge. AVD# Input RESET# Input Hardware Reset. Low = device resets and returns to reading array data. WP# Input Write Protect. At VIL, disables program and erase functions in the four outermost sectors. Should be at VIH for all other conditions. ACC Input Acceleration Input. At VHH, accelerates programming; automatically places device in unlock bypass mode. At VIL, disables all program and erase functions. Should be at VIH for all other conditions. RFU Reserved When high, device ignores address inputs. 6 Reserved for future use (see Figure 4.3, MCP Look-ahead Diagram on page 10). S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 3. S hee t (Adva nce In for m ation) Block Diagram DQ15–DQ0 VCC RDY Buffer VSS RDY Input/Output Buffers Erase Voltage Generator WE# State Control RESET# WP# Command Register PGM Voltage Generator Chip Enable Output Enable Logic CE# OE# VCC Detector AVD# CLK Timer Burst Address Counter Burst State Control Address Latch ACC Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix Amax–A0* *WS256N: A23-A0 WS128N: A22-A0 4. Physical Dimensions/Connection Diagrams This section shows the I/O designations and package specifications for the S29WS-N. 4.1 Related Documents The following documents contain information relating to the S29WS-N devices. Click on the title or go to www.amd.com/flash (click on Technical Documentation) or www.fujitsu.com to download the PDF file, or request a copy from your sales office. Migration to the S29WS256N Family Application Note Considerations for X-ray Inspection of Surface-Mounted Flash Integrated Circuits 4.2 Special Handling Instructions for FBGA Package Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 7 Data Sheet (Advan ce Infor m a tio n) Figure 4.1 84-ball Fine-Pitch Ball Grid Array (S29WS256N, S29WS128N) (Top View, Balls Facing Down, MCP Compatible) A10 A1 NC Ball F6 is RFU on 128 Mb device. 8 B2 B3 B4 B5 B6 B7 B8 B9 AVD# RFU CLK RFU RFU RFU RFU RFU C2 C3 C4 C5 C6 C7 C8 C9 WP# A7 RFU ACC WE# A8 A11 RFU D2 D3 D4 D5 D6 D7 D8 D9 A3 A6 RFU RESET# RFU A19 A12 A15 E2 E3 E4 E5 E6 E7 E8 E9 A2 A5 A18 RDY A20 A9 A13 A21 F2 F3 F4 F5 F6 F7 F8 F9 A1 A4 A17 RFU A23 A10 A14 A22 G2 G3 G4 G5 G6 G7 G8 G9 A0 VSS DQ1 RFU RFU DQ6 RFU A16 H2 H3 H4 H5 H6 H7 H8 H9 CE#f1 OE# DQ9 DQ3 DQ4 DQ13 DQ15 RFU J2 J3 J4 J5 J6 J7 J8 RFU DQ0 DQ10 VCC RFU DQ12 DQ7 VSS K2 K3 K4 K5 K6 K7 K8 K9 RFU DQ8 DQ2 DQ11 RFU DQ5 DQ14 RFU L2 L3 L4 L5 L6 L7 L8 L9 RFU RFU RFU VCC RFU RFU RFU RFU NC J9 M1 M10 NC NC S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 4.2 VBH084—84-ball Fine-Pitch Ball Grid Array (FBGA) 8 x 11.6 mm MCP Compatible Package 0.05 C (2X) D D1 A e 10 9 e 7 8 SE 7 6 E1 E 5 4 3 2 1 M A1 CORNER INDEX MARK L K B 10 H G F E SD 6 0.05 C (2X) J D C B A A1 CORNER 7 NXφb φ 0.08 M C TOP VIEW φ 0.15 M C A B BOTTOM VIEW 0.10 C A2 A A1 C 0.08 C SEATING PLANE SIDE VIEW NOTES: PACKAGE VBH 084 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 11.60 mm x 8.00 mm NOM PACKAGE SYMBOL MIN NOM MAX A --- --- 1.00 A1 0.18 --- --- A2 0.62 --- 0.76 D 11.60 BSC. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). NOTE OVERALL THICKNESS BALL HEIGHT 8.00 BSC. BODY SIZE 8.80 BSC. BALL FOOTPRINT E1 7.20 BSC. MD 12 ROW MATRIX SIZE D DIRECTION ME 10 ROW MATRIX SIZE E DIRECTION N 84 0.33 --- BALL FOOTPRINT N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. TOTAL BALL COUNT 0.43 BALL DIAMETER e 0.80 BSC. BALL PITCH SD / SE 0.40 BSC. SOLDER BALL PLACEMENT (A2-A9, B10-L10, M2-M9, B1-L1) SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. BODY SIZE E DEPOPULATED SOLDER BALLS e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. BODY THICKNESS D1 φb 4. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3339 \ 16-038.25b Note: BSC is an ANSI standard for Basic Space Centering. 4.3 MCP Look-ahead Connection Diagram Figure 4.3 on page 10 shows a migration path from the S29WS-N to higher densities and the option to include additional die within a single package. Spansion Inc. provides this standard look-ahead connection diagram that supports NOR Flash and SRAM densities up to 4 Gigabits NOR Flash and pSRAM densities up to 4 Gigabits NOR Flash and pSRAM and data storage densities up to 4 Gigabits The following multi-chip package (MCP) data sheet(s) are based on the S29WS-N. Refer to these documents for input/output descriptions for each product: November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 9 Data Sheet (Advan ce Infor m a tio n) Publication Number S71WS256_512NC0. The physical package outline may vary between connection diagrams and densities. The connection diagram for any MCP, however, is a subset of the pinout in Figure 4.3. In some cases, outrigger balls may exist in locations outside the grid shown. These outrigger balls are reserved; do not connect them to any other signal. For further information about the MCP look-ahead pinout, refer to the Design-In Scalable Wireless Solutions with Spansion Products application note, available on the web or through a Spansion sales office. Figure 4.3 MCP Look-ahead Diagram 96-ball Fine-Pitch Ball Grid Array (Top View, Balls Facing Down) Legend: A1 A2 A9 A10 NC NC NC NC B1 B2 B9 B10 NC NC NC NC Shared or NC (not connected) Data-storage Only C2 C3 C4 C5 C6 C7 C8 C9 AVD# VSSds CLK CE#f2 D2 D3 D4 D5 D6 D7 D8 D9 WP# A7 LB#s WP/ACC WE# A8 A11 CE1#ds E2 E3 E4 E5 E6 E7 E8 E9 A3 A6 UB#s RESET#f CE2s1 A19 A12 A15 VCCds RESET#ds CLKds RY/BY#ds F2 F3 F4 A2 A5 A18 F5 F6 F7 F8 F9 RDY A20 A9 A13 A21 G2 G3 G4 G5 G6 G7 G8 G9 A1 A4 A17 CE1#s2 A23 A10 A14 A22 H2 H3 H4 H5 H6 H7 H8 H9 A0 VSS DQ1 VCCs2 CE2s2 DQ6 A24 A16 J2 J3 J4 J5 J6 J7 J8 J2 CE#f1 OE# DQ9 DQ3 DQ4 DQ13 DQ15 CREs K2 K3 K4 K5 K6 K7 K8 K9 VCCs1 DQ12 DQ7 VSS L8 L9 Flash Shared Only 1st Flash Only 2nd Flash Only 1st RAM Only 2nd RAM Only CE1#s1 10 DQ0 DQ10 VCCf L2 L4 L4 L5 L6 L7 VCCnds DQ8 DQ2 DQ11 A25 DQ5 RAM Shared Only DoC Only DQ14 LOCK or WP#/ACCds M2 M3 M4 M5 M6 M7 M8 M9 A27 A26 VSSnds VCCf CE2#ds VCCQs1 NC or VCCQds DNU NC or ds N1 N2 N9 N10 NC NC NC NC P1 P2 P9 P10 NC NC NC NC S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 5. S hee t (Adva nce In for m ation) Additional Resources Visit www.spansion.com to obtain the following related documents: Application Notes Using the Operation Status Bits in AMD Devices Understanding Burst Mode Flash Memory Devices Simultaneous Read/Write vs. Erase Suspend/Resume MirrorBit™ Flash Memory Write Buffer Programming and Page Buffer Read Design-In Scalable Wireless Solutions with Spansion Products Common Flash Interface Version 1.4 Vendor Specific Extensions Specification Bulletins Contact your local sales office for details. Drivers and Software Support Spansion low-level drivers Enhanced Flash drivers Flash file system CAD Modeling Support VHDL and Verilog IBIS ORCAD Technical Support Contact your local sales office or contact Spansion Inc. directly for additional technical support: US: (408) 749-5703 Japan (03) 5322-3324 Spansion Inc. Locations 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, CA 94088-3453, USA Telephone: 408-962-2500 or 1-866-SPANSION Spansion Japan Limited Cube-Kawasaki 9F/10F, 1-14 Nisshin-cho, Kawasaki-ku, Kawasaki-shi, Kanagawa, 210-0024, Japan Phone : 044-223-1700 November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 11 Data 6. Sheet (Advan ce Infor m a tio n) Product Overview The S29WS-N family consists of 256, 128 Mbit, 1.8 volts-only, simultaneous read/write burst mode Flash device optimized for today’s wireless designs that demand a large storage array, rich functionality, and low power consumption. These devices are organized in 16 or 8 Mwords of 16 bits each and are capable of continuous, synchronous (burst) read or linear read (8-, 16-, or 32-word aligned group) with or without wrap around. These products also offer single word programming or a 32-word buffer for programming with program/erase and suspend functionality. Additional features include: Advanced Sector Protection methods for protecting sectors as required 256 words of Secured Silicon area for storing customer and factory secured information. The Secured Silicon Sector is One Time Programmable. 6.1 Memory Map The S29WS256/128N Mbit devices consist of 16 banks organized as shown in Table 6.1–Table 6.2. Table 6.1 S29WS256N Sector & Memory Address Map Bank Size Sector Count 4 Sector Size (KB) Bank Sector/ Sector Range Address Range SA000 000000h–003FFFh SA001 004000h–007FFFh Notes Contains four smaller sectors at bottom of addressable memory. 32 2 MB 0 SA002 008000h–00BFFFh SA003 00C000h–00FFFFh 15 128 SA004 to SA018 010000h–01FFFFh to 0F0000h–0FFFFFh 2 MB 16 128 1 SA019 to SA034 100000h–10FFFFh to 1F0000h–1FFFFFh 2 MB 16 128 2 SA035 to SA050 200000h–20FFFFh to 2F0000h–2FFFFFh 2 MB 16 128 3 SA051 to SA066 300000h–30FFFFh to 3F0000h–3FFFFFh 2 MB 16 128 4 SA067 to SA082 400000h–40FFFFh to 4F0000h–4FFFFFh 2 MB 16 128 5 SA083 to SA098 500000h–50FFFFh to 5F0000h–5FFFFFh 2 MB 16 128 6 SA099 to SA114 600000h–60FFFFh to 6F0000h–6FFFFFh 2 MB 16 128 7 SA115 to SA130 700000h–70FFFFh to 7F0000h–7FFFFFh 2 MB 16 128 8 SA131 to SA146 800000h–80FFFFh to 8F0000h–8FFFFFh 2 MB 16 128 9 SA147 to SA162 900000h–90FFFFh to 9F0000h–9FFFFFh 2 MB 16 128 10 SA163 to SA178 A00000h–A0FFFFh to AF0000h–AFFFFFh 2 MB 16 128 11 SA179 to SA194 B00000h–B0FFFFh to BF0000h–BFFFFFh 2 MB 16 128 12 SA195 to SA210 C00000h–C0FFFFh to CF0000h–CFFFFFh 2 MB 16 128 13 SA211 to SA226 D00000h–D0FFFFh to DF0000h–DFFFFFh 2 MB 16 128 14 SA227 to SA242 E00000h–E0FFFFh to EF0000h–EFFFFFh 15 128 SA243 to SA257 F00000h–F0FFFFh to FE0000h–FEFFFFh SA258 FF0000h–FF3FFFh SA259 FF4000h–FF7FFFh 2 MB 15 4 32 SA260 FF8000h–FFBFFFh SA261 FFC000h–FFFFFFh All 128 KB sectors. Pattern for sector address range is xx0000h–xxFFFFh. (See Note) Contains four smaller sectors at top of addressable memory. Note: This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges that are not explicitly listed (such as SA005–SA017) have sector starting and ending addresses that form the same pattern as all other sectors of that size. For example, all 128 KB sectors have the pattern xx00000h–xxFFFFh. 12 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Table 6.2 S29WS128N Sector & Memory Address Map Bank Size Sector Count Sector Size (KB) Bank 32 32 Sector/ Sector Range Address Range SA000 000000h–003FFFh SA001 004000h–007FFFh SA002 008000h–00BFFFh 4 32 1 MB 0 32 SA003 00C000h–00FFFFh 7 128 SA004 to SA010 010000h–01FFFFh to 070000h–07FFFFh 1 MB 8 128 1 SA011 to SA018 080000h–08FFFFh to 0F0000h–0FFFFFh 1 MB 8 128 2 SA019 to SA026 100000h–10FFFFh to 170000h–17FFFFh 1 MB 8 128 3 SA027 to SA034 180000h–18FFFFh to 1F0000h–1FFFFFh 1 MB 8 128 4 SA035 to SA042 200000h–20FFFFh to 270000h–27FFFFh 1 MB 8 128 5 SA043 to SA050 280000h–28FFFFh to 2F0000h–2FFFFFh 1 MB 8 128 6 SA051 to SA058 300000h–30FFFFh to 370000h–37FFFFh 1 MB 8 128 7 SA059 to SA066 380000h–38FFFFh to 3F0000h–3FFFFFh 1 MB 8 128 8 SA067 to SA074 400000h–40FFFFh to 470000h–47FFFFh 1 MB 8 128 9 SA075 to SA082 480000h–48FFFFh to 4F0000h–4FFFFFh 1 MB 8 128 10 SA083 to SA090 500000h–50FFFFh to 570000h–57FFFFh 1 MB 8 128 11 SA091 to SA098 580000h–58FFFFh to 5F0000h–5FFFFFh 1 MB 8 128 12 SA099 to SA106 600000h–60FFFFh to 670000h–67FFFFh 1 MB 8 128 13 SA107 to SA114 680000h–68FFFFh to 6F0000h–6FFFFFh 1 MB 8 128 14 SA115 to SA122 700000h–70FFFFh to 770000h–77FFFFh 7 128 SA123 to SA129 780000h–78FFFFh to 7E0000h–7EFFFFh 32 SA130 7F0000h–7F3FFFh 32 1 MB SA131 7F4000h–7F7FFFh 32 SA132 7F8000h–7FBFFFh 32 SA133 7FC000h–7FFFFFh 15 4 Notes Contains four smaller sectors at bottom of addressable memory. All 128 KB sectors. Pattern for sector address range is xx0000h–xxFFFFh. (See Note) Contains four smaller sectors at top of addressable memory. Note: This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges that are not explicitly listed (such as SA005–SA009) have sector starting and ending addresses that form the same pattern as all other sectors of that size. For example, all 128 KB sectors have the pattern xx00000h–xxFFFFh. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 13 Data 7. Sheet (Advan ce Infor m a tio n) Device Operations This section describes the read, program, erase, simultaneous read/write operations, handshaking, and reset features of the Flash devices. Operations are initiated by writing specific commands or a sequence with specific address and data patterns into the command registers (see Table 12.1 on page 73 and Table 8.2 on page 48). The command register itself does not occupy any addressable memory location; rather, it is composed of latches that store the commands, along with the address and data information needed to execute the command. The contents of the register serve as input to the internal state machine and the state machine outputs dictate the function of the device. Writing incorrect address and data values or writing them in an improper sequence may place the device in an unknown state, in which case the system must write the reset command to return the device to the reading array data mode. 7.1 Device Operation Table The device must be setup appropriately for each operation. Table 7.1 describes the required state of each control pin for any particular operation. Table 7.1 Device Operations Operation Asynchronous Read - Addresses Latched CE# OE# WE# Addresses DQ15–0 RESET# CLK L L H Addr In Data Out H X AVD# Asynchronous Read - Addresses Steady State L L H Addr In Data Out H X L Asynchronous Write L H L Addr In I/O H X L L H L Addr In I/O H Synchronous Write Standby (CE#) H X X X HIGH Z H X X Hardware Reset X X X X HIGH Z L X X L X H Addr In X H L L H X Burst Data Out H H H X H X HIGH Z H X Terminate current Burst read cycle via RESET# X X H X HIGH Z L Terminate current Burst read cycle and start new Burst read cycle L X H Addr In I/O H Burst Read Operations (Synchronous) Load Starting Burst Address Advance Burst to next address with appropriate Data presented on the Data Bus Terminate current Burst read cycle X X Legend: L= Logic 0, H = Logic 1, X = Don’t Care, I/O = Input/Output. 7.2 Asynchronous Read All memories require access time to output array data. In an asynchronous read operation, data is read from one memory location at a time. Addresses are presented to the device in random order, and the propagation delay through the device causes the data on its outputs to arrive asynchronously with the address on its inputs. The device defaults to reading array data asynchronously after device power-up or hardware reset. To read data from the memory array, the system must first assert a valid address on Amax–A0, while driving AVD# and CE# to VIL. WE# must remain at VIH. The rising edge of AVD# latches the address. The OE# signal must be driven to VIL, once AVD# has been driven to VIH. Data is output on A/DQ15-A/DQ0 pins after the access time (tOE) has elapsed from the falling edge of OE#. 14 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 7.3 S hee t (Adva nce In for m ation) Page Read Mode The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The random or initial page access is tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted (= VIH), the reassertion of CE# for subsequent access has access time of tACC or tCE. Here again, CE# selects the device and OE# is the output control and should be used to gate data to the output inputs if the device is selected. Fast page mode accesses are obtained by keeping Amax – A2 constant and changing A1 – A0 to select the specific word within that page. Address bits Amax – A2 select a 4-word page, and address bits A1 – A0 select a specific word within that page. This is an asynchronous operation with the microprocessor supplying the specific word location. See Table 7.2 for details on selecting specific words. The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. Reads from the memory array may be performed in conjunction with the Erase Suspend and Program Suspend features. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. After the device accepts a Program Suspend command, the corresponding bank enters the program-suspend-read mode, after which the system can read data from any non-program-suspended sector within the same bank. The de-assertion and re-assertion of AVD# creates a new tACC. It does not matter if AVD stays low or toggles once. However, the address input must always be valid and stable if AVD# is low during the page read. The user must keep AVD# low during and between page reads on address A(1:0). During Simultaneous Operation (SO), the user needs to de-assert and re- assert either /CE# or /AVD# when performing data polling to SO read. Table 7.2 Word Selection within a Page Word A1 A0 Word 0 0 0 Word 1 0 1 Word 2 1 0 Word 3 1 1 November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 15 Data 7.4 Sheet (Advan ce Infor m a tio n) Synchronous (Burst) Read Mode & Configuration Register When a series of adjacent addresses needs to be read from the device (in order from lowest to highest address), the synchronous (or burst read) mode can be used to significantly reduce the overall time needed for the device to output array data. Asynchronous read mode can be automatically enabled for burst mode by setting the configuration register to enter Synchronous mode. After an initial access time required for the data from the first address location, subsequent data is output synchronized to a clock input provided by the system. The device offers both continuous and linear methods of burst read operation, which are discussed in Continuous Burst Read Mode on page 19 and 8-, 16-, 32-Word Linear Burst Read with Wrap Around on page 19, and 8-, 16-, 32-Word Linear Burst without Wrap Around on page 19. Since the device defaults to asynchronous read mode after power-up or a hardware reset, the configuration register must be set to enable the burst read mode. Other Configuration Register settings include the number of wait states to insert before the initial word (tIACC) of each burst access, the burst mode in which to operate, and when RDY indicates data is ready to be read. Prior to entering the burst mode, the system should first determine the configuration register settings (and read the current register settings if desired via the Read Configuration Register command sequence), and then write the configuration register command sequence. See Configuration Register on page 20, and Table 12.1 on page 73, for further details. Figure 7.1 Synchronous/Asynchronous State Diagram Power-up/ Hardware Reset Asynchronous Read Mode Only Set Burst Mode Configuration Register Command for Synchronous Mode (CR15 = 0) Set Burst Mode Configuration Register Command for Asynchronous Mode (CR15 = 1) Synchronous Read Mode Only The device outputs the initial word subject to the following operational conditions: tIACC specification: the time from the rising edge of the first clock cycle after addresses are latched to valid data on the device outputs. configuration register setting CR13–CR11: the total number of clock cycles (wait states) that occur before valid data appears on the device outputs. The effect is that tIACC is lengthened. The device outputs subsequent words tBACC after the active edge of each successive clock cycle, which also increments the internal address counter. The device outputs burst data at this rate subject to the following operational conditions: starting address: whether the address is divisible by four (where A[1:0] is 00). A divisible-by-four address incurs the least number of additional wait states that occur after the initial word. The number of additional wait states required increases for burst operations in which the starting address is one, two, or three locations above the divisible-by-four address (i.e., where A[1:0] is 01, 10, or 11). 16 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) boundary crossing: There is a boundary at every 128 words due to the internal architecture of the device. One additional wait state must be inserted when crossing this boundary if the memory bus is operating at a high clock frequency. Please refer to the tables below. clock frequency: the speed at which the device is expected to burst data. Higher speeds require additional wait states after the initial word for proper operation. In all cases, with or without latency, the RDY output indicates when the next data is available to be read. Table 7.3 on page 17 to Table 7.8 on page 18 reflect wait states required for S29WS256/128N devices. Refer to the table (CR11 - CR14) and timing diagrams for more details. Table 7.3 Address Latency (S29WS256N) Word Wait States Cycle 0 x ws D0 D1 D2 D3 D4 D5 D6 D7 D8 1 x ws D1 D2 D3 1 ws D4 D5 D6 D7 D8 2 x ws D2 D3 1 ws 1 ws D4 D5 D6 D7 D8 3 x ws D3 1 ws 1 ws 1 ws D4 D5 D6 D7 D8 D6 D7 D8 Table 7.4 Address Latency (S29WS128N) Word Wait States 0 5, 6, 7 ws D0 D1 Cycle 1 5, 6, 7 ws D1 D2 D3 1 ws D4 D5 D6 D7 D8 2 5, 6, 7 ws D2 D3 1 ws 1 ws D4 D5 D6 D7 D8 3 5, 6, 7 ws D3 1 ws 1 ws 1 ws D4 D5 D6 D7 D8 D2 D3 D4 D5 Table 7.5 Address/Boundary Crossing Latency (S29WS256N @ 80MHz) Word Wait States 0 7 ws D0 D1 D2 D3 Cycle 1 ws 1 ws D4 D5 D6 1 7 ws D1 D2 D3 1 ws 1 ws 1 ws D4 D5 D6 2 7 ws D2 D3 1 ws 1 ws 1 ws 1 ws D4 D5 D6 3 7 ws D3 1 ws 1 ws 1 ws 1 ws 1 ws D4 D5 D6 Table 7.6 Address/Boundary Crossing Latency (S29WS256N @ 66 MHz) Word Wait States 0 6 ws D0 D1 D2 D3 Cycle 1 ws D4 D5 D6 D7 1 6 ws D1 D2 D3 1 ws 1 ws D4 D5 D6 D7 2 6 ws D2 D3 1 ws 1 ws 1 ws D4 D5 D6 D7 3 6 ws D3 1 ws 1 ws 1 ws 1 ws D4 D5 D6 D7 Table 7.7 Address/Boundary Crossing Latency (S29WS256N @ 54MHz) Word Wait States 0 5 ws D0 D1 D2 D3 D4 D5 D6 D7 D8 1 5 ws D1 D2 D3 1 ws D4 D5 D6 D7 D8 2 5 ws D2 D3 1 ws 1 ws D4 D5 D6 D7 D8 3 5 ws D3 1 ws 1 ws 1 ws D4 D5 D6 D7 D8 November 10, 2006 S29WS-N_00_I2 Cycle S29WS-N MirrorBitTM Flash Family 17 Data Sheet (Advan ce Infor m a tio n) Table 7.8 Address/Boundary Crossing Latency (S29WS128N) Word Wait States Cycle 0 5, 6, 7 ws D0 D1 D2 D3 1 ws D4 D5 D6 D7 1 5, 6, 7 ws D1 D2 D3 1 ws 1 ws D4 D5 D6 D7 2 5, 6, 7 ws D2 D3 1 ws 1 ws 1 ws D4 D5 D6 D7 3 5, 6, 7 ws D3 1 ws 1 ws 1 ws 1 ws D4 D5 D6 D7 Figure 7.2 Synchronous Read Note: Setup Configuration Register parameters Write Unlock Cycles: Address 555h, Data AAh Address 2AAh, Data 55h Write Set Configuration Register Command and Settings: Address 555h, Data D0h Address X00h, Data CR Load Initial Address Address = RA Wait tIACC + Programmable Wait State Setting Read Initial Data RD = DQ[15:0] Unlock Cycle 1 Unlock Cycle 2 Command Cycle CR = Configuration Register Bits CR15-CR0 RA = Read Address CR13-CR11 sets initial access time (from address latched to valid data) from 2 to 7 clock cycles RD = Read Data Refer to the Latency tables. Wait X Clocks: Additional Latency Due to Starting Address, Clock Frequency, and Boundary Crossing Read Next Data RD = DQ[15:0] Delay X Clocks Yes Crossing Boundary? No End of Data? Yes Completed 18 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 7.4.1 S hee t (Adva nce In for m ation) Continuous Burst Read Mode In the continuous burst read mode, the device outputs sequential burst data from the starting address given and then wrap around to address 000000h when it reaches the highest addressable memory location. The burst read mode continues until the system drives CE# high, or RESET= VIL. Continuous burst mode can also be aborted by asserting AVD# low and providing a new address to the device. If the address being read crosses a 128-word line boundary (as mentioned above) and the subsequent word line is not being programmed or erased, additional latency cycles are required as reflected by the configuration register table (Table 7.10 on page 20). If the address crosses a bank boundary while the subsequent bank is programming or erasing, the device provides read status information and the clock is ignored. Upon completion of status read or program or erase operation, the host can restart a burst read operation using a new address and AVD# pulse. 7.4.2 8-, 16-, 32-Word Linear Burst Read with Wrap Around In a linear burst read operation, a fixed number of words (8, 16, or 32 words) are read from consecutive addresses that are determined by the group within which the starting address falls. The groups are sized according to the number of words read in a single burst sequence for a given mode (see Table 7.9 on page 19). For example, if the starting address in the 8-word mode is 3Ch, the address range to be read would be 383Fh, and the burst sequence would be 3C-3D-3E-3F-38-39-3A-3Bh. Thus, the device outputs all words in that burst address group until all word are read, regardless of where the starting address occurs in the address group, and then terminates the burst read. In a similar fashion, the 16-word and 32-word Linear Wrap modes begin their burst sequence on the starting address provided to the device, then wrap back to the first address in the selected address group. Note that in this mode the address pointer does not cross the boundary that occurs every 128 words; thus, no additional wait states are inserted due to boundary crossing. Table 7.9 Burst Address Groups 7.4.3 Mode Group Size 8-word 8 words 0-7h, 8-Fh, 10-17h,... Group Address Ranges 16-word 16 words 0-Fh, 10-1Fh, 20-2Fh,... 32-word 32 words 00-1Fh, 20-3Fh, 40-5Fh,... 8-, 16-, 32-Word Linear Burst without Wrap Around If wrap around is not enabled for linear burst read operations, the 8-word, 16-word, or 32-word burst executes up to the maximum memory address of the selected number of words. The burst stops after 8, 16, or 32 addresses and does not wrap around to the first address of the selected group. For example, if the starting address in the 8- word mode is 3Ch, the address range to be read would be 3940h, and the burst sequence would be 3C-3D-3E-3F-40-41-42-43h if wrap around is not enabled. The next address to be read requires a new address and AVD# pulse. Note that in this burst read mode, the address pointer may cross the boundary that occurs every 128 words, which will incur the additional boundary crossing wait state. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 19 Data 7.4.4 Sheet (Advan ce Infor m a tio n) Configuration Register The configuration register sets various operational parameters associated with burst mode. Upon power-up or hardware reset, the device defaults to the asynchronous read mode, and the configuration register settings are in their default state. The host system should determine the proper settings for the entire configuration register, and then execute the Set Configuration Register command sequence, before attempting burst operations. The configuration register is not reset after deasserting CE#. The Configuration Register can also be read using a command sequence (see Table 12.1 on page 73). The following list describes the register settings. Table 7.10 Configuration Register CR Bit Function CR15 Set Device Read Mode CR14 Reserved Settings (Binary) 0 = Synchronous Read (Burst Mode) Enabled 1 = Asynchronous Read Mode (default) Enabled 1 = S29WS256N at 6 or 7 Wait State setting 0 = All others 54 MHz 66 Mhz 80 MHz 0 1 1 1 0 0 1 0 1 S29WS128N CR13 S29WS256N S29WS128N CR12 Programmable Wait State S29WS256N S29WS128N CR11 S29WS256N CR10 RDY Polarity CR9 Reserved 011 = Data valid on 5th active CLK edge after addresses latched 100 = Data valid on 6th active CLK edge after addresses latched 101 = Data valid on 7th active CLK edge after addresses latched (default) 110 = Reserved 111 = Reserved Inserts wait states before initial data is available. Setting greater number of wait states before initial data reduces latency after initial data. (Notes 1, 2) 0 = RDY signal active low 1 = RDY signal active high (default) 1 = default 0 = RDY active one clock cycle before data 1 = RDY active with data (default) CR8 RDY CR7 Reserved 1 = default CR6 Reserved 1 = default CR5 Reserved 0 = default CR4 Reserved When CR13-CR11 are set to 000, RDY is active with data regardless of CR8 setting. 0 = default 0 = No Wrap Around Burst CR3 Burst Wrap Around 1 = Wrap Around Burst (default) Ignored if in continuous mode 000 = Continuous (default) CR2 CR1 010 = 8-Word Linear Burst Burst Length 011 = 16-Word Linear Burst CR0 100 = 32-Word Linear Burst (All other bit settings are reserved) Notes: 1. Refer to Table 7.3 on page 17 - Table 7.8 on page 18 for wait states requirements. 2. Refer to Synchronous/Burst Read on page 57 timing diagrams 3. Configuration Register is in the default state upon power-up or hardware reset. Reading the Configuration Table The configuration register can be read with a four-cycle command sequence. See Table 12.1 on page 73 for sequence details. A software reset command is required after reading or setting the configuration register to set the device into the correct state. 20 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 7.5 S hee t (Adva nce In for m ation) Autoselect The Autoselect is used for manufacturer ID, Device identification, and sector protection information. This mode is primarily intended for programming equipment to automatically match a device with its corresponding programming algorithm. The Autoselect codes can also be accessed in-system. When verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 7.11). The remaining address bits are don't care. The most significant four bits of the address during the third write cycle selects the bank from which the Autoselect codes are read by the host. All other banks can be accessed normally for data read without exiting the Autoselect mode. To access the Autoselect codes, the host system must issue the Autoselect command. The Autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The Autoselect command may not be written while the device is actively programming or erasing. Autoselect does not support simultaneous operations or burst mode. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend). See Table 12.1 on page 73 for command sequence details. Table 7.11 Autoselect Addresses Description Address Manufacturer ID (BA) + 00h Device ID, Word 1 (BA) + 01h Device ID, Word 2 (BA) + 0Eh Device ID, Word 3 (BA) + 0Fh Read Data 0001h 227Eh 2230 (WS256N) 2231 (WS128N) 2200 DQ15 - DQ8 = Reserved DQ7 (Factory Lock Bit): 1 = Locked, 0 = Not Locked DQ6 (Customer Lock Bit): 1 = Locked, 0 = Not Locked DQ5 (Handshake Bit): 1 = Reserved, 0 = Standard Handshake Indicator Bits (See Note) (BA) + 03h DQ4, DQ3 (WP# Protection Boot Code): 00 = WP# Protects both Top Boot and Bottom Boot Sectors. 01, 10, 11 = Reserved DQ2 = Reserved DQ1 (DYB Power up State [Lock Register DQ4]): 1 = Unlocked (user option), 0 = Locked (default) DQ0 (PPB Eraseability [Lock Register DQ3]): 1 = Erase allowed, 0 = Erase disabled Sector Block Lock/ Unlock (SA) + 02h 0001h = Locked, 0000h = Unlocked Note: For WS128N and WS064, DQ1 and DQ0 are reserved. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 21 Data Sheet (Advan ce Infor m a tio n) Software Functions and Sample Code Table 7.12 Autoselect Entry (LLD Function = lld_AutoselectEntryCmd) Cycle Operation Byte Address Word Address Data Unlock Cycle 1 Write BAxAAAh BAx555h 0x00AAh Unlock Cycle 2 Write BAx555h BAx2AAh 0x0055h Autoselect Command Write BAxAAAh BAx555h 0x0090h Table 7.13 Autoselect Exit (LLD Function = lld_AutoselectExitCmd) Cycle Operation Byte Address Word Address Data Unlock Cycle 1 Write base + XXXh base + XXXh 0x00F0h Notes: 1. Any offset within the device works. 2. BA = Bank Address. The bank address is required. 3. base = base address. The following is a C source code example of using the autoselect function to read the manufacturer ID. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Here is an example of Autoselect mode (getting manufacturer ID) */ /* Define UINT16 example: typedef unsigned short UINT16; */ UINT16 manuf_id; /* Auto Select Entry */ *( (UINT16 *)bank_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)bank_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)bank_addr + 0x555 ) = 0x0090; /* write autoselect command */ /* multiple reads can be performed after entry */ manuf_id = *( (UINT16 *)bank_addr + 0x000 ); /* read manuf. id */ /* Autoselect exit */ *( (UINT16 *)base_addr + 0x000 ) = 0x00F0; /* exit autoselect (write reset command) */ 22 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 7.6 S hee t (Adva nce In for m ation) Program/Erase Operations These devices are capable of several modes of programming and or erase operations which are described in detail in the following sections. However, prior to any programming and or erase operation, devices must be setup appropriately as outlined in the configuration register (Table 7.10 on page 20). For any synchronous write operations, including writing command sequences, the system must drive AVD# and CE# to VIL, and OE# to VIH when providing an address to the device, and drive WE# and CE# to VIL, and OE# to VIH when writing commands or programming data. During asynchronous write operations, addresses are latched on the rising edge of AVD# while data is latched on the 1st rising edge of WE# or CE#, whichever comes first. Note the following: When the Embedded Program algorithm is complete, the device returns to the read mode. The system can determine the status of the program operation by using DQ7 or DQ6. Refer to Write Operation Status on page 36 for information on these status bits. A “0” cannot be programmed back to a “1.” Attempting to do so causes the device to set DQ5 = 1 (halting any further operation and requiring a reset command). A succeeding read shows that the data is still “0.” Only erase operations can convert a “0” to a “1.” Any commands written to the device during the Embedded Program Algorithm are ignored except the Program Suspend command. Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in progress. A hardware reset immediately terminates the program operation and the program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries for single word programming operation. 7.6.1 Single Word Programming Single word programming mode is the simplest method of programming. In this mode, four Flash command write cycles are used to program an individual Flash address. The data for this programming operation could be 8-, 16- or 32-bits wide. While this method is supported by all Spansion devices, in general it is not recommended for devices that support Write Buffer Programming. See Table 12.1 on page 73 for the required bus cycles and Figure 7.3 on page 24 for the flowchart. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. Refer to Write Operation Status on page 36 for information on these status bits. During programming, any command (except the Suspend Program command) is ignored. The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in progress. A hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 23 Data Sheet (Advan ce Infor m a tio n) Figure 7.3 Single Word Program Write Unlock Cycles: Address 555h, Data AAh Address 2AAh, Data 55h Unlock Cycle 1 Unlock Cycle 2 Write Program Command: Address 555h, Data A0h Setup Command Program Address (PA), Program Data (PD) Program Data to Address: PA, PD Perform Polling Algorithm (see Write Operation Status flowchart) Polling Status = Busy? Yes No Yes Polling Status = Done? Error condition (Exceeded Timing Limits) No PASS. Device is in read mode. 24 FAIL. Issue reset command to return to read array mode. S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Software Function and Sample Code Table 7.14 Single Word Program (LLD Function = lld_ProgramCmd) Cycle Operation Byte Address Word Address Data Unlock Cycle 1 Write Base + AAAh Base + 555h 00AAh Unlock Cycle 2 Write Base + 554h Base + 2AAh 0055h Program Setup Write Base + AAAh Base + 555h 00A0h Program Write Word Address Word Address Data Word Note: Base = Base Address. The following is a C source code example of using the single word program function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Program Command */ *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)base_addr + 0x555 ) = 0x00A0; /* write program setup command */ *( (UINT16 *)pa ) /* write data to be programmed */ = data; /* Poll for program completion */ 7.6.2 Write Buffer Programming Write Buffer Programming allows the system to write a maximum of 32 words in one programming operation. This results in a faster effective word programming time than the standard “word” programming algorithms. The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in which programming occurs. At this point, the system writes the number of “word locations minus 1” that are loaded into the page buffer at the Sector Address in which programming occurs. This tells the device how many write buffer addresses are loaded with data and therefore when to expect the “Program Buffer to Flash” confirm command. The number of locations to program cannot exceed the size of the write buffer or the operation aborts. (Number loaded = the number of locations to program minus 1. For example, if the system programs 6 address locations, then 05h should be written to the device.) The system then writes the starting address/data combination. This starting address is the first address/data pair to be programmed, and selects the “write-buffer-page” address. All subsequent address/data pairs must fall within the elected-write-buffer-page. The “write-buffer-page” is selected by using the addresses AMAX - A5. The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be performed across multiple “write-buffer-pages.” This also means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to load programming data outside of the selected “write-buffer-page”, the operation ABORTs.) After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the write buffer. Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter is decremented for every data load operation. Also, the last data loaded at a location before the “Program Buffer to Flash” confirm command is programmed into the device. It is the software's responsibility to comprehend ramifications of loading a write-buffer location more than once. The counter decrements for each data load operation, NOT for each unique write-buffer-address location. Once the specified number of write buffer locations have been loaded, the system must then write the “Program Buffer to Flash” command at the Sector Address. Any other address/data write combinations abort the Write Buffer Programming operation. The device goes “busy.” The Data Bar polling techniques should be used while monitoring the last address location loaded into the write buffer. This eliminates the need to store an address in memory because the system can load the last address location, issue the program confirm command at the last loaded address location, and then data bar poll at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored to determine the device status during Write Buffer Programming. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 25 Data Sheet (Advan ce Infor m a tio n) The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device returns to READ mode. The Write Buffer Programming Sequence is ABORTED under any of the following conditions: Load a value that is greater than the page buffer size during the “Number of Locations to Program” step. Write to an address in a sector different than the one specified during the Write-Buffer-Load command. Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address” during the “write buffer data loading” stage of the operation. Write data other than the “Confirm Command” after the specified number of “data load” cycles. The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-toBuffer-Abort reset” command sequence is required when using the write buffer Programming features in Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable when a program operation is in progress. Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices are capable of handling multiple write buffer programming operations on the same write buffer address range without intervening erases. Use of the write buffer is strongly recommended for programming when multiple words are to be programmed. Write buffer programming is approximately eight times faster than programming one word at a time. 26 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Software Functions and Sample Code Table 7.15 Write Buffer Program (LLD Functions Used = lld_WriteToBufferCmd, lld_ProgramBufferToFlashCmd) Cycle Description Operation Byte Address Word Address Data 1 Unlock Write Base + AAAh Base + 555h 00AAh 2 Unlock Write Base + 554h Base + 2AAh 0055h 3 Write Buffer Load Command Write Program Address 0025h 4 Write Word Count Write Program Address Word Count (N–1)h 5 to 36 Load Buffer Word N Write Program Address, Word N Word N Last Write Buffer to Flash Write Sector Address 0029h Number of words (N) loaded into the write buffer can be from 1 to 32 words. Notes: 1. Base = Base Address. 2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles may be from 6 to 37. 3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible. The following is a C source code example of using the write buffer program function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Write Buffer Programming Command */ /* NOTES: Write buffer programming limited to 16 words. */ /* All addresses to be written to the flash in /* one operation must be within the same flash /* page. A flash page begins at addresses /* evenly divisible by 0x20. */ */ */ UINT16 *src = source_of_data; /* address of source data UINT16 *dst = destination_of_data; UINT16 wc */ */ /* flash destination address = words_to_program -1; */ /* word count (minus 1) */ *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)sector_address ) = 0x0025; /* write write buffer load command */ *( (UINT16 *)sector_address ) = wc; /* write word count (minus 1) */ loop: *dst = *src; /* ALL dst MUST BE SAME PAGE */ /* write source data to destination */ dst++; /* increment destination pointer */ src++; /* increment source pointer */ if (wc == 0) goto confirm /* done when word count equals zero */ wc--; /* decrement word count */ goto loop; /* do it again */ confirm: *( (UINT16 *)sector_address ) = 0x0029; /* write confirm command */ /* poll for completion */ /* Example: Write Buffer Abort Reset */ *( (UINT16 *)addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)addr + 0x555 ) = 0x00F0; /* write buffer abort reset */ November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 27 Data Sheet (Advan ce Infor m a tio n) Figure 7.4 Write Buffer Programming Operation Write Unlock Cycles: Address 555h, Data AAh Address 2AAh, Data 55h Unlock Cycle 1 Unlock Cycle 2 Issue Write Buffer Load Command: Address 555h, Data 25h Load Word Count to Program Program Data to Address: SA = wc wc = number of words – 1 Yes Confirm command: SA = 0x29h wc = 0? No Wait 4 µs (Recommended) Write Next Word, Decrement wc: PA data , wc = wc – 1 Perform Polling Algorithm (see Write Operation Status flowchart) Yes Write Buffer Abort? Polling Status = Done? No FAIL. Issue reset command to return to read array mode. Yes No No Error? Yes RESET. Issue Write Buffer Abort Reset Command 28 S29WS-N MirrorBitTM Flash Family PASS. Device is in read mode. S29WS-N_00_I2 November 10, 2006 D at a 7.6.3 S hee t (Adva nce In for m ation) Sector Erase The sector erase function erases one or more sectors in the memory array. (See Table 12.1 on page 73, and Figure 7.5 on page 30.) The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. After a successful sector erase, all locations within the erased sector contain FFFFh. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of no less than tSEA occurs. During the timeout period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than tSEA. Any sector erase address and command following the exceeded time-out (tSEA) may or may not be accepted. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to the read mode. The system can monitor DQ3 to determine if the sector erase timer has timed out (See DQ3: Sector Erase Timeout State Indicator on page 39 .) The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing banks. The system can determine the status of the erase operation by reading DQ7 or DQ6/DQ2 in the erasing bank. Refer to Write Operation Status on page 36 for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 7.5 on page 30 illustrates the algorithm for the erase operation. Refer to Erase and Programming Performance on page 72 for parameters and timing diagrams. Software Functions and Sample Code Table 7.16 Sector Erase (LLD Function = lld_SectorEraseCmd) Cycle Description Operation Byte Address Word Address Data 1 Unlock Write 2 Unlock Write Base + AAAh Base + 555h 00AAh Base + 554h Base + 2AAh 3 Setup Command 0055h Write Base + AAAh Base + 555h 0080h 4 Unlock Write Base + AAAh Base + 555h 00AAh 5 Unlock Write Base + 554h Base + 2AAh 0055h 6 Sector Erase Command Write Sector Address Sector Address 0030h Unlimited additional sectors may be selected for erase; command(s) must be written within tSEA. The following is a C source code example of using the sector erase function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Sector Erase Command */ *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)base_addr + 0x555 ) = 0x0080; /* write setup command */ *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write additional unlock cycle 1 */ *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write additional unlock cycle 2 */ *( (UINT16 *)sector_address ) /* write sector erase command November 10, 2006 S29WS-N_00_I2 = 0x0030; S29WS-N MirrorBitTM Flash Family */ 29 Data Sheet (Advan ce Infor m a tio n) Figure 7.5 Sector Erase Operation Write Unlock Cycles: Address 555h, Data AAh Address 2AAh, Data 55h Unlock Cycle 1 Unlock Cycle 2 Write Sector Erase Cycles: Address 555h, Data 80h Address 555h, Data AAh Address 2AAh, Data 55h Sector Address, Data 30h Command Cycle 1 Command Cycle 2 Command Cycle 3 Specify first sector for erasure Select Additional Sectors? No Yes Write Additional Sector Addresses • Each additional cycle must be written within tSEA timeout • Timeout resets after each additional cycle is written • The host system may monitor DQ3 or wait tSEA to ensure acceptance of erase commands No Yes Poll DQ3. DQ3 = 1? Last Sector Selected? No Yes • No limit on number of sectors • Commands other than Erase Suspend or selecting additional sectors for erasure during timeout reset device to reading array data Wait 4 µs (Recommended) Perform Write Operation Status Algorithm Yes Status may be obtained by reading DQ7, DQ6 and/or DQ2. Done? (see Figure 7.6) No DQ5 = 1? No Error condition (Exceeded Timing Limits) Yes PASS. Device returns to reading array. FAIL. Write reset command to return to reading array. Notes: 1. See Table 12.1 on page 73 for erase command sequence. 2. See DQ3: Sector Erase Timeout State Indicator on page 39 for information on the sector erase timeout. 30 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 7.6.4 S hee t (Adva nce In for m ation) Chip Erase Command Sequence Chip erase is a six-bus cycle operation as indicated by Table 12.1 on page 73. These commands invoke the Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. After a successful chip erase, all locations of the chip contain FFFFh. The system is not required to provide any controls or timings during these operations. The Appendix on page 73 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer to Write Operation Status on page 36 for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Software Functions and Sample Code Table 7.17 Chip Erase (LLD Function = lld_ChipEraseCmd) Cycle Description Operation Byte Address Word Address Data 1 Unlock Write Base + AAAh Base + 555h 00AAh 2 Unlock Write Base + 554h Base + 2AAh 0055h 3 Setup Command Write Base + AAAh Base + 555h 0080h 4 Unlock Write Base + AAAh Base + 555h 00AAh 5 Unlock Write Base + 554h Base + 2AAh 0055h 6 Chip Erase Command Write Base + AAAh Base + 555h 0010h The following is a C source code example of using the chip erase function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Chip Erase Command */ /* Note: Cannot be suspended */ *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)base_addr + 0x555 ) = 0x0080; /* write setup command */ *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write additional unlock cycle 1 */ *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write additional unlock cycle 2 */ *( (UINT16 *)base_addr + 0x000 ) = 0x0010; /* write chip erase command November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family */ 31 Data 7.6.5 Sheet (Advan ce Infor m a tio n) Erase Suspend/Erase Resume Commands When the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the minimum tSEA time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation. When the Erase Suspend command is written after the tSEA time-out period has expired and during the sector erase operation, the device requires a maximum of tESL (erase suspend latency) to suspend the erase operation. Additionaly, when an Erase Suspend command is written during an active erase operation, status information is unavailable during the transition from the sector erase operation to the erase suspended state. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Table 7.26 on page 40 for information on these status bits. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to Write Buffer Programming on page 25 and the “Autoselect Command Sequence” section for details. To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Software Functions and Sample Code Table 7.18 Erase Suspend (LLD Function = lld_EraseSuspendCmd) Cycle Operation Byte Address Word Address Data 1 Write Bank Address Bank Address 00B0h The following is a C source code example of using the erase suspend function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Erase suspend command */ *( (UINT16 *)bank_addr + 0x000 ) = 0x00B0; /* write suspend command */ Table 7.19 Erase Resume (LLD Function = lld_EraseResumeCmd) Cycle Operation Byte Address Word Address Data 1 Write Bank Address Bank Address 0030h The following is a C source code example of using the erase resume function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Erase resume command */ *( (UINT16 *)bank_addr + 0x000 ) = 0x0030; /* write resume command */ /* The flash needs adequate time in the resume state */ 32 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 7.6.6 S hee t (Adva nce In for m ation) Program Suspend/Program Resume Commands The Program Suspend command allows the system to interrupt an embedded programming operation or a “Write to Buffer” programming operation so that data can read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the programming operation within tPSL (program suspend latency) and updates the status bits. Addresses are “don't-cares” when writing the Program Suspend command. After the programming operation has been suspended, the system can read array data from any nonsuspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use the proper command sequences to enter and exit this region. The system may also write the Autoselect command sequence when the device is in Program Suspend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes are not stored in the memory array. When the device exits the Autoselect mode, the device reverts to Program Suspend mode, and is ready for another valid operation. See Autoselect on page 21 for more information. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status on page 36 for more information. The system must write the Program Resume command (address bits are “don't care”) to exit the Program Suspend mode and continue the programming operation. Further writes of the Program Resume command are ignored. Another Program Suspend command can be written after the device has resumed programming. Software Functions and Sample Code Table 7.20 Program Suspend (LLD Function = lld_ProgramSuspendCmd) Cycle Operation Byte Address Word Address Data 1 Write Bank Address Bank Address 00B0h The following is a C source code example of using the program suspend function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Program suspend command */ *( (UINT16 *)base_addr + 0x000 ) = 0x00B0; /* write suspend command */ Table 7.21 Program Resume (LLD Function = lld_ProgramResumeCmd) Cycle Operation Byte Address Word Address Data 1 Write Bank Address Bank Address 0030h The following is a C source code example of using the program resume function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Program resume command */ *( (UINT16 *)base_addr + 0x000 ) = 0x0030; November 10, 2006 S29WS-N_00_I2 /* write resume command S29WS-N MirrorBitTM Flash Family */ 33 Data 7.6.7 Sheet (Advan ce Infor m a tio n) Accelerated Program/Chip Erase Accelerated single word programming, write buffer programming, sector erase, and chip erase operations are enabled through the ACC function. This method is faster than the standard chip program and erase command sequences. The accelerated chip program and erase functions must not be used more than 10 times per sector. In addition, accelerated chip program and erase should be performed at room temperature (25°C ±10°C). If the system asserts VHH on this input, the device automatically enters the aforementioned Unlock Bypass mode and uses the higher voltage on the input to reduce the time required for program and erase operations. The system can then use the Write Buffer Load command sequence provided by the Unlock Bypass mode. Note that if a “Write-to-Buffer-Abort Reset” is required while in Unlock Bypass mode, the full 3-cycle RESET command sequence must be used to reset the device. Removing VHH from the ACC input, upon completion of the embedded program or erase operation, returns the device to normal operation. Sectors must be unlocked prior to raising ACC to VHH. The ACC pin must not be at VHH for operations other than accelerated programming and accelerated chip erase, or device damage may result. The ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. ACC locks all sector if set to VIL; ACC should be set to VIH for all other conditions. 7.6.8 Unlock Bypass The device features an Unlock Bypass mode to facilitate faster word programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program data, instead of the normal four cycles. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. The Appendix on page 73 shows the requirements for the unlock bypass command sequences. During the unlock bypass mode, only the Read, Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns to the read mode. 34 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Software Functions and Sample Code The following are C source code examples of using the unlock bypass entry, program, and exit functions. Refer to the Spansion Low Level Driver User’s Guide (available soon on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. Table 7.22 Unlock Bypass Entry (LLD Function = lld_UnlockBypassEntryCmd) Cycle Description Operation Byte Address 1 Unlock Write 2 Unlock Write 3 Entry Command Write /* Example: Unlock Bypass Entry Command Word Address Data Base + AAAh Base + 555h 00AAh Base + 554h Base + 2AAh 0055h Base + AAAh Base + 555h 0020h */ *( (UINT16 *)bank_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)bank_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)bank_addr + 0x555 ) = 0x0020; /* write unlock bypass command */ /* At this point, programming only takes two write cycles. */ /* Once you enter Unlock Bypass Mode, do a series of like */ /* operations (programming or sector erase) and then exit */ /* Unlock Bypass Mode before beginning a different type of */ /* operations. */ Table 7.23 Unlock Bypass Program (LLD Function = lld_UnlockBypassProgramCmd) Cycle Description Operation Byte Address 1 Program Setup Command Write Base + xxxh Base +xxxh 00A0h 2 Program Command Write Program Address Program Address Program Data /* Example: Unlock Bypass Program Command */ /* Do while in Unlock Bypass Entry Mode! */ Word Address Data *( (UINT16 *)bank_addr + 0x555 ) = 0x00A0; /* write program setup command */ *( (UINT16 *)pa ) /* write data to be programmed */ = data; /* Poll until done or error. */ /* If done and more to program, */ /* do above two cycles again. */ Table 7.24 Unlock Bypass Reset (LLD Function = lld_UnlockBypassResetCmd) Cycle Description Operation Byte Address Word Address Data 1 Reset Cycle 1 Write Base + xxxh Base +xxxh 0090h 2 Reset Cycle 2 Write Base + xxxh Base +xxxh 0000h /* Example: Unlock Bypass Exit Command */ *( (UINT16 *)base_addr + 0x000 ) = 0x0090; *( (UINT16 *)base_addr + 0x000 ) = 0x0000; November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 35 Data 7.6.9 Sheet (Advan ce Infor m a tio n) Write Operation Status The device provides several bits to determine the status of a program or erase operation. The following subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Note that the Data# Polling is valid only for the last word being programmed in the write-buffer-page during Write Buffer Programming. Reading Data# Polling status on any word other than the last word to be programmed in the write-buffer-page returns false status information. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# polling on DQ7 is active for approximately tPSP, then that bank returns to the read mode. During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately tASP, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7-D00 appears on successive read cycles. See the following for more information: Table 7.26 on page 40, shows the outputs for Data# Polling on DQ7. Figure 7.6 on page 37, shows the Data# Polling algorithm; and Figure 11.18 on page 66, shows the Data# Polling timing diagram. 36 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 7.6 Write Operation Status Flowchart START Read 1 (Note 6) YES Erase Operation Complete DQ7=valid data? NO YES YES Read 2 Read 1 DQ5=1? Read3= valid data? NO NO Read 3 Read 2 Program Operation Failed YES Write Buffer Programming? YES NO Programming Operation? Read 3 NO Device BUSY, Re-Poll (Note 3) (Note 1) (Note 4) Read3 DQ1=1? YES DQ6 toggling? TIMEOUT NO YES (Note 5) (Note 1) YES DQ6 toggling? NO (Note 2) NO DEVICE ERROR Device BUSY, Re-Poll YES DQ2 toggling? NO Read 2 Device BUSY, Re-Poll Erase Operation Complete Read 3 Read3 DQ1=1 AND DQ7 ? Valid Data? Device in Erase/Suspend Mode YES Write Buffer Operation Failed NO Device BUSY, Re-Poll Notes: 1. DQ6 is toggling if Read2 DQ6 does not equal Read3 DQ6. 2. DQ2 is toggling if Read2 DQ2 does not equal Read3 DQ2. 3. May be due to an attempt to program a 0 to 1. Use the RESET command to exit operation. 4. Write buffer error if DQ1 of last read =1. 5. Invalid state, use RESET command to exit operation. 6. Valid data is the data that is intended to be programmed or all 1's for an erase operation. 7. Data polling algorithm valid for all operations except advanced sector protection. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 37 Data Sheet (Advan ce Infor m a tio n) DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address in the same bank, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately tASP [all sectors protected toggle time], then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see DQ7: Data# Polling on page 36). If a program address falls within a protected sector, DQ6 toggles for approximately tPAP after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program Algorithm is complete. See the following for additional information: Figure 7.6 on page 37; Figure 11.19 on page 66, and Table 7.25 on page 38 and Table 7.26 on page 40. Toggle Bit I on DQ6 requires either OE# or CE# to be de-asserted and reasserted to show the change in state. DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 7.25 to compare outputs for DQ2 and DQ6. See the following for additional information: Figure 7.6 on page 37, the DQ6: Toggle Bit I on page 38, and Figure 11.18 on page 66 to Figure 11.25 on page 68. Table 7.25 DQ6 and DQ2 Indications If device is and the system reads then DQ6 and DQ2 programming, at any address, toggles, does not toggle. at an address within a sector selected for erasure, toggles, also toggles. at an address within sectors not selected for erasure, toggles, does not toggle. at an address within a sector selected for erasure, does not toggle, toggles. at an address within sectors not selected for erasure, returns array data, returns array data. The system can read from any sector not selected for erasure. at any address, toggles, is not applicable. actively erasing, erase suspended, programming in erase suspend 38 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Reading Toggle Bits DQ6/DQ2 Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erases operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see DQ5: Exceeded Timing Limits on page 39). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erases operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. Refer to Figure 7.6 on page 37 for more details. Note: When verifying the status of a write operation (embedded program/erase) of a memory bank, DQ6 and DQ2 toggle between high and low states in a series of consecutive and con-tiguous status read cycles. In order for this toggling behavior to be properly observed, the consecutive status bit reads must not be interleaved with read accesses to other memory banks. If it is not possible to temporarily prevent reads to other memory banks, then it is recommended to use the DQ7 status bit as the alternative method of determining the active or inactive status of the write operation. Data polling provides erroneous results during erase suspend operation using DQ2 or DQ6 for any address changes after CE# asseration or without AVD# pulsing low. THe user is required to pulse AVD# following an address change or assert CE# after address is stable during status polling. See Figure 11.21 on page 67 through Figure 11.24 on page 68 . DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.”Under both these conditions, the system must write the reset command to return to the read mode (or to the erasesuspend-read mode if a bank was previously in the erase-suspend-program mode). DQ3: Sector Erase Timeout State Indicator After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than tSEA, the system need not monitor DQ3. See Sector Erase on page 29 for more details. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device accepts additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each sub-sequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 7.26 shows the status of DQ3 relative to the other status bits. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 39 Data Sheet (Advan ce Infor m a tio n) DQ1: Write to Buffer Abort DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a “1”. The system must issue the Write to Buffer Abort Reset command sequence to return the device to reading array data. See Write Buffer Programming on page 25 for more details. Table 7.26 Write Operation Status Standard Mode Program Suspend Mode (Note 3) Erase Suspend Mode (Note 6) Write to Buffer (Note 5) Status DQ7 (Note 2) DQ6 DQ5 (Note 1) DQ3 DQ2 (Note 2) DQ1 (Note 4) Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle 0 Embedded Erase Algorithm Reading within Program Suspended Sector Reading within Non-Program Suspended Sector Erase-SuspendRead Erase Suspended Sector Non-Erase Suspended Sector 0 Toggle 0 1 Toggle N/A INVALID INVALID INVALID INVALID INVALID INVALID (Not Allowed) (Not Allowed) (Not Allowed) (Not Allowed) (Not Allowed) (Not Allowed) Data Data Data Data Data Data 1 No toggle 0 N/A Toggle N/A Data Data Data Data Data Data Erase-Suspend-Program DQ7# Toggle 0 N/A N/A N/A BUSY State DQ7# Toggle 0 N/A N/A 0 Exceeded Timing Limits DQ7# Toggle 1 N/A N/A 0 ABORT State DQ7# Toggle 0 N/A N/A 1 Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to DQ5: Exceeded Timing Limits on page 39 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. Data are invalid for addresses in a Program Suspended sector. 4. DQ1 indicates the Write to Buffer ABORT status during Write Buffer Programming operations. 5. The data-bar polling algorithm should be used for Write Buffer Programming operations. Note that DQ7# during Write Buffer Programming indicates the data-bar for DQ7 data for the LAST LOADED WRITE-BUFFER ADDRESS location. 6. For any address changes after CE# assertion, re-assertion of CE# might be required after the addresses become stable for data polling during the erase suspend operation using DQ2/DQ6. 7.7 Simultaneous Read/Write The simultaneous read/write feature allows the host system to read data from one bank of memory while programming or erasing another bank of memory. An erase operation may also be suspended to read from or program another location within the same bank (except the sector being erased). Figure 11.29 on page 71 shows how read and write cycles may be initiated for simultaneous operation with zero latency. Refer to DC Characteristics (CMOS Compatible) on page 56 for read-while-program and read-while-erase current specification. 40 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 7.8 S hee t (Adva nce In for m ation) Writing Commands/Command Sequences When the device is configured for Asynchronous read, only Asynchronous write operations are allowed, and CLK is ignored. When in the Synchronous read mode configuration, the device is able to perform both Asynchronous and Synchronous write operations. CLK and AVD# induced address latches are supported in the Synchronous programming mode. During a synchronous write operation, to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive AVD# and CE# to VIL, and OE# to VIH when providing an address to the device, and drive WE# and CE# to VIL, and OE# to VIH when writing commands or data. During an asynchronous write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector, multiple sectors, or the entire device. Table 6.1 on page 12 and Table 6.2 on page 13 indicate the address space that each sector occupies. The device address space is divided into sixteen banks: Banks 1 through 14 contain only 64 Kword sectors, while Banks 0 and 15 contain both 16 Kword boot sectors in addition to 64 Kword sectors. A “bank address” is the set of address bits required to uniquely select a bank. Similarly, a “sector address” is the address bits required to uniquely select a sector. ICC2 inDC Characteristics (CMOS Compatible) on page 56 represents the active current specification for the write mode. “AC Characteristics-Synchronous” and “AC Characteristics-Asynchronous” contain timing specification tables and timing diagrams for write operations. 7.9 Handshaking The handshaking feature allows the host system to detect when data is ready to be read by simply monitoring the RDY (Ready) pin, which is a dedicated output and controlled by CE#. When the device is configured to operate in synchronous mode, and OE# is low (active), the initial word of burst data becomes available after either the falling or rising edge of the RDY pin (depending on the setting for bit 10 in the Configuration Register). It is recommended that the host system set CR13–CR11 in the Configuration Register to the appropriate number of wait states to ensure optimal burst mode operation (see Table 7.10 on page 20). Bit 8 in the Configuration Register allows the host to specify whether RDY is active at the same time that data is ready, or one cycle before data is ready. 7.10 Hardware Reset The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. To ensure data integrity the operation that was interrupted should be reinitiated once the device is ready to accept another command sequence. When RESET# is held at VSS, the device draws CMOS standby current (ICC4). If RESET# is held at VIL, but not at VSS, the standby current is greater. RESET# may be tied to the system reset circuitry which enables the system to read the boot-up firmware from the Flash memory upon a system reset. See Figure 11.5 on page 55 and Figure 11.13 on page 62 for timing diagrams. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 41 Data 7.11 Sheet (Advan ce Infor m a tio n) Software Reset Software reset is part of the command set (see Table 12.1 on page 73) that also returns the device to array read mode and must be used for the following conditions: to exit Autoselect mode when DQ5 goes high during write status operation that indicates program or erase cycle was not successfully completed exit sector lock/unlock operation. to return to erase-suspend-read mode if the device was previously in Erase Suspend mode. after any aborted operations exiting Read Configuration Registration Mode Software Functions and Sample Code Table 7.27 Reset (LLD Function = lld_ResetCmd) Cycle Operation Byte Address Word Address Data Reset Command Write Base + xxxh Base + xxxh 00F0h Note: Base = Base Address. The following is a C source code example of using the reset function. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: Reset (software reset of Flash state machine) */ *( (UINT16 *)base_addr + 0x000 ) = 0x00F0; The following are additional points to consider when using the reset command: This command resets the banks to the read and address bits are ignored. Reset commands are ignored once erasure has begun until the operation is complete. Once programming begins, the device ignores reset commands until the operation is complete The reset command may be written between the cycles in a program command sequence before programming begins (prior to the third cycle). This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. The reset command may be also written during an Autoselect command sequence. If a bank has entered the Autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ1 goes high during a Write Buffer Programming operation, the system must write the "Write to Buffer Abort Reset" command sequence to RESET the device to reading array data. The standard RESET command does not work during this condition. To exit the unlock bypass mode, the system must issue a two-cycle unlock bypass reset command sequence [see command table for details]. 42 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) 8. Advanced Sector Protection/Unprotection The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations in any or all sectors and can be implemented through software and/or hardware methods, which are independent of each other. This section describes the various methods of protecting data stored in the memory array. An overview of these methods in shown in Figure 8.1 on page 43. Figure 8.1 Advanced Sector Protection/Unprotection Hardware Methods Software Methods Lock Register (One Time Programmable) ACC = VIL (All sectors locked) Password Method Persistent Method (DQ2) (DQ1) WP# = VIL (All boot sectors locked) 64-bit Password (One Time Protect) PPB Lock Bit1,2,3 0 = PPBs Locked 1 = PPBs Unlocked 1. Bit is volatile, and defaults to “1” on reset. 2. Programming to “0” locks all PPBs to their current state. 3. Once programmed to “0”, requires hardware reset to unlock. Memory Array Persistent Protection Bit (PPB)4,5 Sector 0 PPB 0 DYB 0 Sector 1 PPB 1 DYB 1 Sector 2 PPB 2 DYB 2 Sector N-2 PPB N-2 DYB N-2 Sector N-1 PPB N-1 DYB N-1 PPB N DYB N 3 Sector N 3. N = Highest Address Sector. November 10, 2006 S29WS-N_00_I2 4. 0 = Sector Protected, 1 = Sector Unprotected. 5. PPBs programmed individually, but cleared collectively S29WS-N MirrorBitTM Flash Family Dynamic Protection Bit (DYB)6,7,8 6. 0 = Sector Protected, 1 = Sector Unprotected. 7. Protect effective only if PPB Lock Bit is unlocked and corresponding PPB is “1” (unprotected). 8. Volatile Bits: defaults to user choice upon power-up (see ordering options). 43 Data 8.1 Sheet (Advan ce Infor m a tio n) Lock Register As shipped from the factory, all devices default to the persistent mode when power is applied, and all sectors are unprotected, unless otherwise chosen through the DYB ordering option (see Ordering Information on page 5). The device programmer or host system must then choose which sector protection method to use. Programming (setting to “0”) any one of the following two one-time programmable, non-volatile bits locks the part permanently in that mode: Lock Register Persistent Protection Mode Lock Bit (DQ1) Lock Register Password Protection Mode Lock Bit (DQ2) Table 8.1 Lock Register Device S29WS256N DQ15-05 1 DQ4 1 DYB Lock Boot Bit S29WS128N Undefined 0 = sectors power up protected 1 = sectors power up unprotected DQ3 DQ2 DQ1 DQ0 1 Password Protection Mode Lock Bit Persistent Protection Mode Lock Bit Customer Secure Silicon Sector Protection Bit Password Protection Mode Lock Bit Persistent Protection Mode Lock Bit Secure Silicon Sector Protection Bit PPB One-Time Programmable Bit 0 = All PPB erase command disabled 1 = All PPB Erase command enabled For programming lock register bits refer to Figure 12.1 on page 74. Notes: 1. If the password mode is chosen, the password must be programmed before setting the corresponding lock register bit. 2. After the Lock Register Bits Command Set Entry command sequence is written, reads and writes for Bank 0 are disabled, while reads from other banks are allowed until exiting this mode. 3. If both lock bits are selected to be programmed (to zeros) at the same time, the operation aborts. 4. Once the Password Mode Lock Bit is programmed, the Persistent Mode Lock Bit is permanently disabled, and no changes to the protection scheme are allowed. Similarly, if the Persistent Mode Lock Bit is programmed, the Password Mode is permanently disabled. 5. During erase/program suspend, ASP entry commands are not allowed. 6. When the device lock register is programmed (PPB mode lock bit is programmed, password mode lock bit is programmed, or the Secured Silicon Sector lock bit is programmed) all DYBs revert to the power-on default state. 7. Lock register programming operation: A. Data Polling can be done immediately after the lock register programming command sequence (no delay required). Note that status polling can be done only in bank 0 and the recommended 4-µs delay is for backward compatibility and is not required. This recommendation will be noted as such in the next revision of the data sheet. B. Reads from other banks (simultaneous operation) are not allowed during lock register programming. This restriction applies to both synchronous and asynchronous read operations. C. The above clarifications are true for programming any bits of the Lock Register. After selecting a sector protection method, each sector can operate in any of the following three states: 1. Constantly locked. The selected sectors are protected and can not be reprogrammed unless PPB lock bit is cleared via a password, hardware reset, or power cycle. 2. Dynamically locked. The selected sectors are protected and can be altered via software commands. 3. Unlocked. The sectors are unprotected and can be erased and/or programmed. These states are controlled by the bit types described in Section 8.2 on page 45 to Section 8.6 on page 48. 44 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 8.2 S hee t (Adva nce In for m ation) Persistent Protection Bits The Persistent Protection Bits are unique and nonvolatile for each sector and have the same endurances as the Flash memory. Preprogramming and verification prior to erasure are handled by the device, and therefore do not require system monitoring. Notes: 1. Each PPB is individually programmed and all are erased in parallel. 2. PPB program/erase operation: Reads from other banks (simultaneous operation) are not allowed during PPB programming/erase operation. This restriction applies for both synchronous and asynchronous read operations. 3. Entry command disables reads and writes for the bank selected. 4. Reads within that bank return the PPB status for that sector. 5. All Reads must be performed using the Asynchronous mode. 6. The specific sector address (A23-A14 WS256N, A22-A14 WS128N) are written at the same time as the program command. 7. If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-out without programming or erasing the PPB. 8. There are no means for individually erasing a specific PPB and no specific sector address is required for this operation. 9. Exit command must be issued after the execution which resets the device to read mode and re-enables reads and writes for Bank 0 10. The programming state of the PPB for a given sector can be verified by writing a PPB Status Read Command to the device as described by the flow chart shown in Figure 8.2 on page 45. Figure 8.2 PPB Program/Erase Algorithm Enter PPB Command Set. Addr = BA Program PPB Bit. Addr = SA Read Byte Twice Addr = SA0 DQ6 = Toggle? No Yes No DQ5 = 1? Wait 500 µs Yes Read Byte Twice Addr = SA0 DQ6 = Toggle? No Read Byte. Addr = SA Yes No FAIL DQ0 = '1' (Erase) '0' (Pgm.)? Yes PASS Exit PPB Command Set November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 45 Data 8.3 Sheet (Advan ce Infor m a tio n) Dynamic Protection Bits Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYBs only control the protection scheme for unprotected sectors that have their PPBs cleared (erased to “1”). By issuing the DYB Set or Clear command sequences, the DYBs are set (programmed to “0”) or cleared (erased to “1”), thus placing each sector in the protected or unprotected state respectively. This feature allows software to easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. Notes: 1. The DYBs can be set (programmed to “0”) or cleared (erased to “1”) as often as needed. When the parts are first shipped, the PPBs are cleared (erased to “1”) and upon power up or reset, the DYBs can be set or cleared depending upon the ordering option chosen. 2. If the option to clear the DYBs after power up is chosen, (erased to “1”), then the sectorsmay be modified depending upon the PPB state of that sector (see Table 8.2 on page 48). 3. The sectors would be in the protected state If the option to set the DYBs after power up is chosen (programmed to “0”). 4. It is possible to have sectors that are persistently locked with sectors that are left in the dynamic state. 5. The DYB Set or Clear commands for the dynamic sectors signify protected or unprotectedstate of the sectors respectively. However, if there is a need to change the status of the persistently locked sectors, a few more steps are required. First, the PPB Lock Bit must be cleared by either putting the device through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the desired settings. Setting the PPB Lock Bit once again locks the PPBs, and the device operates normally again. 6. To achieve the best protection, it is recommended to execute the PPB Lock Bit Set command early in the boot code and protect the boot code by holding WP# = VIL. Note that the PPB and DYB bits have the same function when ACC = VHH as they do when ACC =VIH. 8.4 Persistent Protection Bit Lock Bit The Persistent Protection Bit Lock Bit is a global volatile bit for all sectors. When set (programmed to “0”), it locks all PPBs and when cleared (programmed to “1”), allows the PPBs to be changed. There is only one PPB Lock Bit per device. Notes: 1. No software command sequence unlocks this bit unless the device is in the password protection mode; only a hardware reset or a powerup clears this bit. 2. The PPB Lock Bit must be set (programmed to “0”) only after all PPBs are configured to the desired settings. 8.5 Password Protection Method The Password Protection Method allows an even higher level of security than the Persistent Sector Protection Mode by requiring a 64 bit password for unlocking the device PPB Lock Bit. In addition to this password requirement, after power up and reset, the PPB Lock Bit is set “0” to maintain the password mode of operation. Successful execution of the Password Unlock command by entering the entire password clears the PPB Lock Bit, allowing for sector PPBs modifications. Notes: 1. There is no special addressing order required for programming the password. Once the Password is written and verified, the Password Mode Locking Bit must be set in order to prevent access. 2. The Password Program Command is only capable of programming “0”s. Programming a “1” after a cell is programmed as a “0” results in a time-out with the cell as a “0”. 3. The password is all “1”s when shipped from the factory. 4. All 64-bit password combinations are valid as a password. 5. There is no means to verify what the password is after it is set. 6. The Password Mode Lock Bit, once set, prevents reading the 64-bit password on the data bus and further password programming. 7. The Password Mode Lock Bit is not erasable. 8. The lower two address bits (A1–A0) are valid during the Password Read, Password Program, and Password Unlock. 9. The exact password must be entered in order for the unlocking function to occur. 10. The Password Unlock command cannot be issued any faster than 1 µs at a time to prevent a hacker from running through all the 64-bit combinations in an attempt to correctly match a password. 11. Approximately 1 µs is required for unlocking the device after the valid 64-bit password is given to the device. 12. Password verification is only allowed during the password programming operation. 13. All further commands to the password region are disabled and all operations are ignored. 14. If the password is lost after setting the Password Mode Lock Bit, there is no way to clear the PPB Lock Bit. 15. Entry command sequence must be issued prior to any of any operation and it disables reads and writes for Bank 0. Reads and writes for other banks excluding Bank 0 are allowed. 16. If the user attempts to program or erase a protected sector, the device ignores the command and returns to read mode. 46 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) 17. A program or erase command to a protected sector enables status polling and returns to read mode without having modified the contents of the protected sector. 18. The programming of the DYB, PPB, and PPB Lock for a given sector can be verified by writing individual status read commands DYB Status, PPB Status, and PPB Lock Status to the device. Figure 8.3 Lock Register Program Algorithm Write Unlock Cycles: Address 555h, Data AAh Address 2AAh, Data 55h Unlock Cycle 1 Unlock Cycle 2 Write Enter Lock Register Command: Address 555h, Data 40h XXXh = Address don’t care Program Lock Register Data Address XXXh, Data A0h Address 77h*, Data PD * Not on future devices Program Data (PD): See text for Lock Register definitions Caution: Lock register can only be progammed once. Wait 4 µs (Recommended) Perform Polling Algorithm (see Write Operation Status flowchart) Yes Done? No DQ5 = 1? No Error condition (Exceeded Timing Limits) Yes PASS. Write Lock Register Exit Command: Address XXXh, Data 90h Address XXXh, Data 00h Device returns to reading array. November 10, 2006 S29WS-N_00_I2 FAIL. Write rest command to return to reading array. S29WS-N MirrorBitTM Flash Family 47 Data 8.6 Sheet (Advan ce Infor m a tio n) Advanced Sector Protection Software Examples Table 8.2 Sector Protection Schemes Unique Device PPB Lock Bit 0 = locked 1 = unlocked Sector PPB 0 = protected 1 = unprotected Sector DYB 0 = protected 1 = unprotected Sector Protection Status Any Sector 0 0 x Protected through PPB Any Sector 0 0 x Protected through PPB Any Sector 0 1 1 Unprotected Any Sector 0 1 0 Protected through DYB Any Sector 1 0 x Protected through PPB Any Sector 1 0 x Protected through PPB Any Sector 1 1 0 Protected through DYB Any Sector 1 1 1 Unprotected Table 8.2 on page 48 contains all possible combinations of the DYB, PPB, and PPB Lock Bit relating to the status of the sector. In summary, if the PPB Lock Bit is locked (set to “0”), no changes to the PPBs are allowed. The PPB Lock Bit can only be unlocked (reset to “1”) through a hardware reset or power cycle. See also Figure 8.1 on page 43 for an overview of the Advanced Sector Protection feature. 8.7 Hardware Data Protection Methods The device offers two main types of data protection at the sector level via hardware control: When WP# is at VIL, the device disables program and erase functions in the outermost boot sectors. When ACC is at VIL, all sectors are locked. There are additional methods by which intended or accidental erasure of any sectors can be prevented via hardware means. The following subsections describes these methods: 8.7.1 WP# Method The Write Protect feature provides a hardware method of protecting the four outermost sectors. This function is provided by the WP# pin and overrides the previously discussed Sector Protection/Unprotection method. If the system asserts VIL on the WP# pin, the device disables program and erase functions in the “outermost” boot sectors. The outermost boot sectors are the sectors containing both the lower and upper set of sectors in a dual-boot-configured device. If the system asserts VIH on the WP# pin, the device reverts to whether the boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected. Note that the WP# pin must not be left floating or unconnected as inconsistent behavior of the device may result. The WP# pin must be held stable during a command sequence execution 8.7.2 ACC Method This method is similar to above, except it protects all sectors. Once ACC input is set to VIL, all program and erase functions are disabled and hence all sectors are protected. 8.7.3 Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control inputs to prevent unintentional writes when VCC is greater than VLKO. 48 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 8.7.4 S hee t (Adva nce In for m ation) Write Pulse “Glitch Protection” Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. 8.7.5 Power-Up Write Inhibit If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. 9. Power Conservation Modes 9.1 Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at VCC ± 0.2 V. The device requires standard access time (tCE) for read access, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in DC Characteristics (CMOS Compatible) on page 56 represents the standby current specification 9.2 Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption while in asynchronous mode. the device automatically enables this mode when addresses remain stable for tACC + 20 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. While in synchronous mode, the automatic sleep mode is disabled. Note that a new burst operation is required to provide new data. ICC6 in DC Characteristics (CMOS Compatible) on page 56 represents the automatic sleep mode current specification. 9.3 Hardware RESET# Input Operation The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence to ensure data integrity. When RESET# is held at VSS ± 0.2 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS ± 0.2 V, the standby current is greater. RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. 9.4 Output Disable (OE#) When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high impedance state. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 49 Data Sheet (Advan ce Infor m a tio n) 10. Secured Silicon Sector Flash Memory Region The Secured Silicon Sector provides an extra Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 words in length that consists of 128 words for factory data and 128 words for customer-secured areas. All Secured Silicon reads outside of the 256-word address range returns invalid data. The Factory Indicator Bit, DQ7, (at Autoselect address 03h) is used to indicate whether or not the Factory Secured Silicon Sector is locked when shipped from the factory. The Customer Indicator Bit (DQ6) is used to indicate whether or not the Customer Secured Silicon Sector is locked when shipped from the factory. Please note the following general conditions: While Secured Silicon Sector access is enabled, simultaneous operations are allowed except for Bank 0. On power-up, or following a hardware reset, the device reverts to sending commands to the normal address space. Reads can be performed in the Asynchronous or Synchronous mode. Burst mode reads within Secured Silicon Sector wrap from address FFh back to address 00h. Reads outside of sector 0 return memory array data. Continuous burst read past the maximum address is undefined. Sector 0 is remapped from memory array to Secured Silicon Sector array. Once the Secured Silicon Sector Entry Command is issued, the Secured Silicon Sector Exit command must be issued to exit Secured Silicon Sector Mode. The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or Embedded Erase algorithm. Table 10.1 Secured Silicon Sector Addresses 10.1 Sector Sector Size Address Range Customer 128 words 000080h-0000FFh Factory 128 words 000000h-00007Fh Factory Secured Silicon Sector The Factory Secured Silicon Sector is always protected when shipped from the factory and has the Factory Indicator Bit (DQ7) permanently set to a “1”. This prevents cloning of a factory locked part and ensures the security of the ESN and customer code once the product is shipped to the field. These devices are available pre programmed with one of the following: A random, 8 Word secure ESN only within the Factory Secured Silicon Sector Customer code within the Customer Secured Silicon Sector through the SpansionTM programming service. Both a random, secure ESN and customer code through the Spansion programming service. Customers may opt to have their code programmed through the Spansion programming services. Spansion programs the customer's code, with or without the random ESN. The devices are then shipped from the Spansion factory with the Factory Secured Silicon Sector and Customer Secured Silicon Sector permanently locked. Contact your local representative for details on using Spansion programming services. 50 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 10.2 S hee t (Adva nce In for m ation) Customer Secured Silicon Sector The Customer Secured Silicon Sector is typically shipped unprotected (DQ6 set to “0”), allowing customers to utilize that sector in any manner they choose. If the security feature is not required, the Customer Secured Silicon Sector can be treated as an additional Flash memory space. Please note the following: Once the Customer Secured Silicon Sector area is protected, the Customer Indicator Bit is permanently set to “1.” The Customer Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. The Customer Secured Silicon Sector lock must be used with caution as once locked, there is no procedure available for unlocking the Customer Secured Silicon Sector area and none of the bits in the Customer Secured Silicon Sector memory space can be modified in any way. The accelerated programming (ACC) and unlock bypass functions are not available when programming the Customer Secured Silicon Sector, but reading in Banks 1 through 15 is available. Once the Customer Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence which return the device to the memory array at sector 0. 10.3 Secured Silicon Sector Entry/Exit Command Sequences The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. See Table 12.1 on page 73 for address and data requirements for both command sequences. The Secured Silicon Sector Entry Command allows the following commands to be executed Read customer and factory Secured Silicon areas Program the customer Secured Silicon Sector After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by sector SA0 within the memory array. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 51 Data Sheet (Advan ce Infor m a tio n) Software Functions and Sample Code The following are C functions and source code examples of using the Secured Silicon Sector Entry, Program, and exit commands. Refer to the Spansion Low Level Driver User’s Guide (available soon on www.spansion.com) for general information on Spansion Flash memory software development guidelines. Table 10.2 Secured Silicon Sector Entry (LLD Function = lld_SecSiSectorEntryCmd) Cycle Operation Byte Address Word Address Data Unlock Cycle 1 Write Unlock Cycle 2 Write Base + AAAh Base + 555h 00AAh Base + 554h Base + 2AAh Entry Cycle Write 0055h Base + AAAh Base + 555h 0088h Note: Base = Base Address. /* Example: SecSi Sector Entry Command */ *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)base_addr + 0x555 ) = 0x0088; /* write Secsi Sector Entry Cmd */ Table 10.3 Secured Silicon Sector Program (LLD Function = lld_ProgramCmd) Cycle Operation Byte Address Word Address Data Unlock Cycle 1 Write Unlock Cycle 2 Write Base + AAAh Base + 555h 00AAh Base + 554h Base + 2AAh Program Setup 0055h Write Base + AAAh Base + 555h 00A0h Program Write Word Address Word Address Data Word Note: Base = Base Address. /* Once in the SecSi Sector mode, you program */ /* words using the programming algorithm. */ Table 10.4 Secured Silicon Sector Exit (LLD Function = lld_SecSiSectorExitCmd) Cycle Operation Byte Address Word Address Data Unlock Cycle 1 Write Base + AAAh Base + 555h 00AAh Unlock Cycle 2 Write Base + 554h Base + 2AAh 0055h Exit Cycle Write Base + AAAh Base + 555h 0090h Note: Base = Base Address. /* Example: SecSi Sector Exit Command */ 52 *( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */ *( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */ *( (UINT16 *)base_addr + 0x555 ) = 0x0090; /* write SecSi Sector Exit cycle 3 */ *( (UINT16 *)base_addr + 0x000 ) = 0x0000; /* write SecSi Sector Exit cycle 4 */ S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) 11. Electrical Specifications 11.1 Absolute Maximum Ratings Storage Temperature Plastic Packages –65°C to +150°C Ambient Temperature with Power Applied –65°C to +125°C Voltage with Respect to Ground: All Inputs and I/Os except as noted below (1) –0.5 V to VCC + 0.5 V VCC (1) –0.5 V to +2.5 V ACC (2) –0.5 V to +9.5 V Output Short Circuit Current (3) 100 mA Notes: 1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot VSS to –2.0 V for periods of up to 20 ns. See Figure 11.1 on page 53. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions outputs may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 11.2 on page 53. 2. Minimum DC input voltage on pin ACC is -0.5V. During voltage transitions, ACC may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 11.1 on page 53. Maximum DC voltage on pin ACC is +9.5 V, which may overshoot to 10.5 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. Figure 11.1 Maximum Negative Overshoot Waveform 20 ns 20 ns +0.8 V –0.5 V –2.0 V 20 ns Figure 11.2 Maximum Positive Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 1.0 V 20 ns 20 ns Note: The content in this document is Advance information for the S29WS128N. Content in this document is Preliminary for the S29W256N. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 53 Data 11.2 Sheet (Advan ce Infor m a tio n) Operating Ranges Wireless (W) Devices Supply Voltages Ambient Temperature (TA): –25°C to +85°C VCC Supply Voltages: +1.70 V to +1.95 V Note: Operating ranges define those limits between which the functionality of the device is guaranteed. 11.3 Test Conditions Figure 11.3 Test Setup Device Under Test CL Table 11.1 Test Specifications Test Condition All Speed Options Unit 30 pF Output Load Capacitance, CL (including jig capacitance) 3.0 @ 54, 66 MHz Input Rise and Fall Times 2.5 @ 80 MHz Input Pulse Levels 11.4 ns 0.0–VCC V Input timing measurement reference levels VCC/2 V Output timing measurement reference levels VCC/2 V Key to Switching Waveforms Waveform Inputs Outputs Steady Changing from H to L Changing from L to H 54 Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 11.5 S hee t (Adva nce In for m ation) Switching Waveforms Figure 11.4 Input Waveforms and Measurement Levels All Inputs and Outputs VCC Input VCC/2 VCC/2 Measurement Level Output 0.0 V 11.6 VCC Power-up Parameter Description Test Setup Speed Unit tVCS VCC Setup Time Min 1 ms Notes: 1. All VCC signals must be ramped simultaneously to ensure correct power-up. 2. S29WS128N: VCC ramp rate is > 1V/ 100 µs and for VCC ramp rate of < 1 V / 100 µs a hardware reset is required. Figure 11.5 VCC Power-up Diagram tVCS VCC RESET# November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 55 Data 11.7 Sheet (Advan ce Infor m a tio n) DC Characteristics (CMOS Compatible) Parameter Description (Notes) Test Conditions (Notes 1, 8) Min Typ Max Unit ILI Input Load Current VIN = VSS to VCC, VCC = VCCmax ±1 µA ILO Output Leakage Current (2) VOUT = VSS to VCC, VCC = VCCmax ±1 µA CE# = VIL, OE# = VIH, WE# = VIH, burst length = 8 CE# = VIL, OE# = VIH, WE# = VIH, burst length = 16 ICCB VCC Active burst Read Current CE# = VIL, OE# = VIH, WE# = VIH, burst length = 32 CE# = VIL, OE# = VIH, WE# = VIH, burst length = Continuous ICC1 ICC2 VCC Active Asynchronous Read Current (3) VCC Active Write Current (4) 54 MHz 27 54 mA 66 MHz 28 60 mA 80 MHz 30 66 mA 54 MHz 28 48 mA 66 MHz 30 54 mA 80 MHz 32 60 mA 54 MHz 29 42 mA 66 MHz 32 48 mA 80 MHz 34 54 mA 54 MHz 32 36 mA 66 MHz 35 42 mA 80 MHz 38 48 mA 10 MHz 34 45 mA 5 MHz 17 26 mA 1 MHz 4 7 mA CE# = VIL, OE# = VIH, ACC = VIH VACC 1 5 µA VCC 24 52.5 mA CE# = RESET# = VACC 1 5 µA VCC ± 0.2 V VCC 20 70 µA CE# = VIL, OE# = VIH, WE# = VIH ICC3 VCC Standby Current (5, 6) ICC4 VCC Reset Current (6) RESET# = VIL, CLK = VIL 70 250 µA ICC5 VCC Active Current (Read While Write) (6) CE# = VIL, OE# = VIH, ACC = VIH @ 5 MHz 50 60 mA ICC6 VCC Sleep Current (6) CE# = VIL, OE# = VIH 2 ICC7 VCC Page Mode Read Current OE# = VIH, CE# = VIL IACC Accelerated Program Current (7) CE# = VIL, OE# = VIH, VACC = 9.5 V 70 µA 12 mA VACC 6 20 mA VCC 14 20 mA VIL Input Low Voltage VCC = 1.8 V –0.5 0.4 V VIH Input High Voltage VCC = 1.8 V VCC – 0.4 VCC + 0.4 V 0.1 V 9.5 V 1.4 V VOL Output Low Voltage IOL = 100 µA, VCC = VCC min VOH Output High Voltage IOH = –100 µA, VCC = VCC min VHH Voltage for Accelerated Program VLKO Low VCC Lock-out Voltage VCC 8.5 V Notes: 1. Maximum ICC specifications are tested with VCC = VCCmax. 2. CE# must be set high when measuring the RDY pin. 3. The ICC current listed is typically less than 3.5 mA/MHz, with OE# at VIH. 4. ICC active while Embedded Erase or Embedded Program is in progress. 5. Device enters automatic sleep mode when addresses are stable for tACC + 20 ns. Typical sleep mode current is equal to ICC3. 6. VIH = VCC ± 0.2 V and VIL > –0.1 V. 7. Total current during accelerated programming is the sum of VACC and VCC currents. 8. VACC = VHH on ACC input. 56 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a 11.8 S hee t (Adva nce In for m ation) AC Characteristics 11.8.1 CLK Characterization Parameter 54 MHz 66 MHz 80 MHz Unit fCLK CLK Frequency Description Max 54 66 80 MHz tCLK CLK Period Min 18.5 15.1 12.5 ns tCH CLK High Time Min 7.4 6.1 5.0 ns tCL CLK Low Time tCR CLK Rise Time Max 3 3 2.5 ns tCF CLK Fall Time Note: Not 100% tested. Figure 11.6 CLK Characterization tCLK tCH CLK 11.8.2 tCL tCF tCR Synchronous/Burst Read Parameter JEDEC Standard Description 54 MHz 66 MHz 80 MHz 80 Unit tIACC Latency Max tBACC Burst Access Time Valid Clock to Output Delay Max 13.5 ns tACS Address Setup Time to CLK (Note 1) Min 5 4 ns ns 11.2 9 tACH Address Hold Time from CLK (Note 1) Min 7 6 tBDH Data Hold Time from Next Clock Cycle Min 4 3 tCR Chip Enable to RDY Valid Max 13.5 tOE Output Enable to Output Valid Max 13.5 11.2 ns ns 9 11.2 ns ns tCEZ Chip Enable to High Z (Note 2) Max 10 ns tOEZ Output Enable to High Z (Note 2) Max 10 ns tCES CE# Setup Time to CLK Min 4 tRDYS RDY Setup Time to CLK Min 5 4 3.5 tRACC 13.5 11.2 8.5 ns ns Ready Access Time from CLK Max tCAS CE# Setup Time to AVD# Min tAVC AVD# Low to CLK Min 4 ns tAVD AVD# Pulse Min 7 ns tAVDH AVD# Hold Min Minimum clock frequency Min fCLK 0 3 1 1 ns ns ns 1 MHz Notes: 1. Addresses are latched on the first rising edge of CLK. 2. Not 100% tested. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 57 Data Sheet (Advan ce Infor m a tio n) Table 11.2 Synchronous Wait State Requirements Max Frequency 11.8.3 Wait State Requirement 01 MHz < Freq. ≤ 14 MHz 2 14 MHz < Freq. ≤ 27 MHz 3 27 MHz < Freq. ≤ 40 MHz 4 40 MHz < Freq. ≤ 54 MHz 5 54 MHz < Freq. ≤ 67 MHz 6 67 MHz < Freq. ≤ 80 MHz 7 Timing Diagrams Figure 11.7 CLK Synchronous Burst Mode Read 5 cycles for initial access shown. tCES tCEZ 18.5 ns typ. (54 MHz) CE# 1 2 3 4 5 6 7 CLK tAVC AVD# tAVD tAVDH tACS Addresses Aa tBACC tACH Hi-Z Data (n) tIACC Da Da + 1 Da + 2 Da + 3 Da + n tOEZ tBDH OE# tOE RDY (n) tRACC Hi-Z Hi-Z tCR tRDYS Hi-Z Data (n + 1) Da RDY (n + 1) Da + 1 Da + 2 Da + 2 Da + n Hi-Z Hi-Z Hi-Z Data (n + 2) Da RDY (n + 2) Da + 1 Da + 1 Da + 1 Da + n Hi-Z Hi-Z Hi-Z Data (n + 3) Da RDY (n + 3) Hi-Z Da Da Da Da + n Hi-Z Notes: 1. Figure shows total number of wait states set to five cycles. The total number of wait states can be programmed from two cycles to seven cycles. 2. If any burst address occurs at “address + 1”, “address + 2”, or “address + 3”, additional clock delay cycles are inserted, and are indicated by RDY. 3. The device is in synchronous mode. 58 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 11.8 8-word Linear Burst with Wrap Around 7 cycles for initial access shown. tCES CE# 1 2 3 4 5 6 7 CLK tAVC AVD# tAVDH tAVD tACS Addresses Ac tBACC tACH Data tIACC OE# RDY tCR DC DE DF DB D8 tRACC tRACC tOE Hi-Z DD tBDH tRDYS Notes: 1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two cycles to seven cycles. 2. If any burst address occurs at “address + 1”, “address + 2”, or “address + 3”, additional clock delay cycles are inserted, and are indicated by RDY. 3. The device is in synchronous mode with wrap around. 4. D8–DF in data waveform indicate the order of data within a given 8-word address range, from lowest to highest. Starting address in figure is the 4th address in range (0-F). Figure 11.9 8-word Linear Burst without Wrap Around tCES CE# 7? cycles for initial access shown. 1 CLK 2 3 4 5 6 7 tAVC tAVDH AVD# tAVD tACS Addresses Ac tBACC tACH Data tIACC OE# RDY tCR Hi-Z tOE DC DD DE DF D8 DB tBDH tRACC tRACC tRDYS Notes: 1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two cycles to seven cycles. Clock is set for active rising edge. 2. If any burst address occurs at “address + 1”, “address + 2”, or “address + 3”, additional clock delay cycles are inserted, and are indicated by RDY. 3. The device is in asynchronous mode with out wrap around. 4. DC–D13 in data waveform indicate the order of data within a given 8-word address range, from lowest to highest. Starting address in figure is the 1st address in range (c-13). November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 59 Data Sheet (Advan ce Infor m a tio n) Figure 11.10 Linear Burst with RDY Set One Cycle Before Data tCES 5 6 7 ~ ~ tAVC ~ ~ ~ ~ 1 CLK tCEZ 6 wait cycles for initial access shown. ~ ~ CE# tAVDH AVD# tAVD tACS Addresses Aa tBACC tACH Hi-Z Data tIACC Da tCR RDY Da+2 Da+3 Da + n tBDH tRACC OE# Da+1 tOEZ tOE Hi-Z Hi-Z tRDYS Notes: 1. Figure assumes 6 wait states for initial access and synchronous read. 2. The Set Configuration Register command sequence has been written with CR8=0; device outputs RDY one cycle before valid data. 11.8.4 AC Characteristics—Asynchronous Read Parameter JEDEC Standard Description 54 MHz 66 MHz 80 MHz Unit tCE Access Time from CE# Low Max 80 ns tACC Asynchronous Access Time Max 80 ns ns tAVDP AVD# Low Time Min 8 tAAVDS Address Setup Time to Rising Edge of AVD# Min 4 tAAVDH Address Hold Time from Rising Edge of AVD# Min tOE Output Enable to Output Valid Max 13.5 ns Read Min 0 ns tOEH Output Enable Hold Time Toggle and Data# Polling Min 10 ns tOEZ Output Enable to High Z (Note 1) Max 10 ns tCAS CE# Setup Time to AVD# Min 0 ns tPACC Page Access Time Max 20 ns tOH Output Hold Time From Addresses, CE# or OE#, whichever occurs first (Note 2) Min 0 ns tCEZ Chip Enable to Output Tristate Max 10 ns 7 ns 6 ns Notes: 1. Not 100% tested. 2. tOEH = 1 ns for S29WS128N. 60 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 11.11 Asynchronous Mode Read CE# tOE OE# tOEH WE# tCE tOEZ Data Valid RD tACC RA Addresses tAAVDH tCAS AVD# tAVDP tAAVDS Notes: RA = Read Address, RD = Read Data. ~ ~ Figure 11.12 Four-Word Page-Mode Operation Same Page Address ~ ~ ~ ~ A22-A2 A1-A0 A1 ~ ~ A0 A2 A3 tCE ~ ~ CE# tCOEZ tACC ~ ~ AVD# Optional tOE tPACC OE# ~ ~ ~ ~ tOEZ WE# tOH D0 ~ ~ Data tPACC tOEZ D1 D1 tOH 11.8.5 tPACC D2 D3 tOH Hardware Reset (RESET#) Parameter JEDEC Std. All Speed Options Unit tRP RESET# Pulse Width Description Min 30 µs tRH Reset High Time Before Read (See Note) Min 200 ns Note: Not 100% tested. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 61 Data Sheet (Advan ce Infor m a tio n) Figure 11.13 Reset Timings CE#, OE# tRH RESET# tRP 11.8.6 Erase/Program Timing Parameter JEDEC Standard tAVAV tWC Description 54 MHz Write Cycle Time (1) Min tWLAX tAS tAH 80 MHz Unit 80 ns 5 ns Asynchronous 0 ns Synchronous 9 Synchronous tAVWL 66 MHz Address Setup Time (2) (3) Min Address Hold Time (2) (3) Min ns Asynchronous 20 tAVDP AVD# Low Time Min tDVWH tDS Data Setup Time Min tWHDX tDH Data Hold Time Min 0 ns tGHWL tGHWL ns 8 45 ns 20 ns Read Recovery Time Before Write Min 0 tCAS CE# Setup Time to AVD# Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 30 ns tWPH Write Pulse Width High Min 20 ns tSR/W Latency Between Read and Write Operations Min 0 ns tWHWL tELWL tVID VACC Rise and Fall Time Min 500 ns tVIDS VACC Setup Time (During Accelerated Programming) Min 1 µs ns tCS CE# Setup Time to WE# Min 5 tAVSW AVD# Setup Time to WE# Min 5 ns tAVHW AVD# Hold Time to WE# Min 5 ns tAVSC AVD# Setup Time to CLK Min 5 ns tAVHC AVD# Hold Time to CLK Min 5 ns tCSW Clock Setup Time to WE# Min 5 ns tWEP Noise Pulse Margin on WE# Max 3 ns tSEA Sector Erase Accept Time-out Min 50 µs tESL Erase Suspend Latency Max 20 µs tPSL Program Suspend Latency Max 20 µs tASP Toggle Time During Erase within a Protected Sector Typ 0 µs tPSP Toggle Time During Programming Within a Protected Sector Typ 0 µs Notes: 1. Not 100% tested. 2. Asynchronous read mode allows Asynchronous program operation only. Synchronous read mode allows both Asynchronous and Synchronous program operation. 3. In asynchronous program operation timing, addresses are latched on the falling edge of WE#. In synchronous program operation timing, addresses are latched on the rising edge of CLK. 4. See Erase and Programming Performance on page 72 for more information. 5. Does not include the preprogramming time. 62 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 11.14 Chip/Sector Erase Operation Timings Erase Command Sequence (last two cycles) VIH CLK Read Status Data VIL tAVDP AVD# tAH tAS Addresses 555h for chip erase Data VA SA 2AAh 55h VA 10h for chip erase In Progress 30h Complete tDS tDH CE# tCH OE# tWP WE# tCS tVCS tWHWH2 tWPH tWC VCC November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 63 Data Sheet (Advan ce Infor m a tio n) Figure 11.15 Program Operation Timing Using AVD# Program Command Sequence (last two cycles) Read Status Data VIH CLK VIL tAVSW tAVHW tAVDP AVD# tAS tAH Addresses 555h VA PA Data A0h VA In Progress PD Complete tDS tCAS tDH CE# tCH OE# tWP WE# tWHWH1 tCS tWPH tWC tVCS VCC Notes: 1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits. 2. “In progress” and “complete” refer to status of program operation. 3. A23–A14 for the WS256N (A22–A14 for the WS128N) are don’t care during command sequence unlock cycles. 4. CLK can be either VIL or VIH. 5. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Configuration Register. 64 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 11.16 Program Operation Timing Using CLK in Relationship to AVD# Program Command Sequence (last two cycles) Read Status Data tAVCH CLK tAS tAH tAVSC AVD# tAVDP Addresses VA PA 555h Data VA In Progress PD A0h Complete tDS tDH tCAS CE# OE# tCH tCSW tWP WE# tWHWH1 tWPH tWC tVCS VCC Notes: 1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits. 2. “In progress” and “complete” refer to status of program operation. 3. A23–A14 for the WS256N (A22–A14 for the WS128N) are don’t care during command sequence unlock cycles. 4. Addresses are latched on the first rising edge of CLK. 5. Either CE# or AVD# is required to go from low to high in between programming command sequences. 6. The Synchronous programming operation is dependent of the Set Device Read Mode bit in the Configuration Register. The Configuration Register must be set to the Synchronous Read Mode. Figure 11.17 Accelerated Unlock Bypass Programming Timing CE# AVD# WE# Addresses PA Data Don't Care OE# tVIDS ACC A0h Don't Care PD Don't Care VID tVID VIL or VIH Note: Use setup and hold times from conventional program operation. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 65 Data Sheet (Advan ce Infor m a tio n) Figure 11.18 Data# Polling Timings (During Embedded Algorithm) AVD# tCEZ tCE CE# tCH tOEZ tOE OE# tOEH WE# tACC Addresses VA High Z VA High Z Status Data Data Status Data Notes: 1. Status reads in figure are shown as asynchronous. 2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, and Data# Polling outputs true data. Figure 11.19 Toggle Bit Timings (During Embedded Algorithm) AVD# tCEZ tCE CE# tCH tOEZ tOE OE# tOEH WE# tACC Addresses Data VA High Z VA High Z Status Data Status Data Notes: 1. Status reads in figure are shown as asynchronous. 2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the toggle bits stop toggling. 66 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 11.20 Synchronous Data Polling Timings/Toggle Bit Timings CE# CLK AVD# Addresses VA VA OE# tIACC tIACC Data Status Data Status Data RDY Notes: 1. The timings are similar to synchronous read timings. 2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the toggle bits stop toggling. 3. RDY is active with data (D8 = 1 in the Configuration Register). When D8 = 0 in the Configuration Register, RDY is active one clock cycle before data. Figure 11.21 Conditions for Incorrect DQ2 Polling During Erase Suspend 0ns 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns ADDR CE# AVD# OE# Note: DQ2 does not toggle correctly during erase suspend if AVD# or CE# are held low after valid address. Figure 11.22 Correct DQ2 Polling during Erase Suspend #1 0ns 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns 2 ADDR CE# AVD# OE# Note: DQ2 polling during erase suspend behaves normally if CE# pulses low at or after valid Address, even if AVD# does not. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 67 Data Sheet (Advan ce Infor m a tio n) Figure 11.23 Correct DQ2 Polling during Erase Suspend #2 0ns 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns ADDR CE# AVD# OE# Note: DQ2 polling during erase suspend behaves normally if AVD# pulses low at or after valid Address, even if CE# does not. Figure 11.24 Correct DQ2 Polling during Erase Suspend #3 0ns 20ns 40ns 60ns 80ns 100ns 120ns 140ns 160ns 180ns 200ns ADDR CE# AVD# OE# Note: DQ2 polling during erase suspend behaves normally if both AVD# and CE# pulse low at or after valid Address. Figure 11.25 DQ2 vs. DQ6 Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Read Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6 68 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 11.26 Latency with Boundary Crossing when Frequency > 66 MHz Address boundary occurs every 128 words, beginning at address 00007Fh: (0000FFh, 00017Fh, etc.) Address 000000h is also a boundary crossing. C124 C125 C126 7C 7D 7E C127 C127 C128 C129 7F 7F 80 81 C130 C131 CLK Address (hex) AVD# tRACC RDY(1) latency tRACC RDY(2) OE#, CE# 83 (stays high) tRACC Data 82 tRACC latency D124 D125 D126 D127 D128 D129 D130 (stays low) Notes: 1. RDY(1) active with data (D8 = 1 in the Configuration Register). 2. RDY(2) active one clock cycle before data (D8 = 0 in the Configuration Register). 3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. 4. Figure shows the device not crossing a bank in the process of performing an erase or program. 5. RDY does not go low and no additional wait states are required for WS ≤ 5. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 69 Data Sheet (Advan ce Infor m a tio n) Figure 11.27 Latency with Boundary Crossing into Program/Erase Bank Address boundary occurs every 128 words, beginning at address 00007Fh: (0000FFh, 00017Fh, etc.) Address 000000h is also a boundary crossing. C124 C125 C126 7C 7D 7E C127 C127 CLK Address (hex) AVD# 7F 7F (stays high) tRACC tRACC RDY(1) latency tRACC tRACC RDY(2) latency Data OE#, CE# D124 D125 D126 D127 Read Status (stays low) Notes: 1. RDY(1) active with data (D8 = 1 in the Configuration Register). 2. RDY(2) active one clock cycle before data (D8 = 0 in the Configuration Register). 3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. 4. Figure shows the device crossing a bank in the process of performing an erase or program. 5. RDY does not go low and no additional wait states are required for WS ≤ 5. Figure 11.28 Example of Wait States Insertion Data D0 D1 Rising edge of next clock cycle following last wait state triggers next burst data AVD# total number of clock cycles following addresses being latched OE# 1 2 3 0 1 4 5 6 7 3 4 5 CLK 2 number of clock cycles programmed Wait State Configuration Register Setup: D13, D12, D11 = “111” ⇒ Reserved D13, D12, D11 = “110” ⇒ Reserved D13, D12, D11 = “101” ⇒ 5 programmed, 7 total D13, D12, D11 = “100” ⇒ 4 programmed, 6 total D13, D12, D11 = “011” ⇒ 3 programmed, 5 total Note: Figure assumes address D0 is not at an address boundary, and wait state is set to “101”. 70 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Figure 11.29 Back-to-Back Read/Write Cycle Timings Last Cycle in Program or Sector Erase Command Sequence Read status (at least two cycles) in same bank and/or array data from other bank tWrite Cycle Begin another write or program command sequence tWrite Cycle tRead Cycle tRead Cycle CE# OE# tOE tOEH tGHWL WE# tWPH Data tWP tDS tOEZ tACC tOEH tDH RD PD/30h AAh RD tSR/W Addresses PA/SA RA RA 555h tAS AVD# tAH Note: Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure valid information. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 71 Data 11.8.7 Sheet (Advan ce Infor m a tio n) Erase and Programming Performance Parameter Typ (Note 1) Max (Note 2) 64 Kword VCC 0.6 3.5 16 Kword VCC <0.15 2 153.6 (WS256N) 308 (WS256N) 154 (WS128N) Sector Erase Time VCC Unit s 77.4 (WS128N) Chip Erase Time s ACC Single Word Programming Time (Note 7) Effective Word Programming Time utilizing Program Write Buffer Total 32-Word Buffer Programming Time 130.6 (WS256N) 65.8 (WS128N) VCC 40 400 24 240 VCC 9.4 94 ACC 6 60 µs µs VCC 300 3000 ACC 192 1920 157.3 (WS256N) 78.6 (WS128N) 314.6 (WS256N) 157.3 (WS128N) 100.7 (WS256N) 50.3 (WS128N) 201.3 (WS256N) 100.7 (WS128N) Chip Programming Time (Note 3) ACC Excludes 00h programming prior to erasure (Note 4) 262 (WS256N) 132 (WS128N) ACC VCC Comments µs s Excludes system level overhead (Note 5) Note: 1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 10,000 cycles; checkerboard data pattern. 2. Under worst case conditions of 90°C, VCC = 1.70 V, 100,000 cycles. 3. Typical chip programming time is considerably less than the maximum chip programming time listed, and is based on utilizing the Write Buffer. 4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See the Appendix on page 73 for further information on command definitions. 6. Refer to Application Note “Erase Suspend/Resume Timing” for more details. 7. Word programming specification is based upon a single word programming operation not utilizing the write buffer. 11.8.8 BGA Ball Capacitance Parameter Symbol Parameter Description Test Setup Typ. Max Unit CIN Input Capacitance VIN = 0 5.3 6.3 pF COUT Output Capacitance VOUT = 0 5.8 6.8 pF CIN2 Control Pin Capacitance VIN = 0 6.3 7.3 pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C; f = 1.0 MHz. 72 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) 12. Appendix This section contains information relating to software control or interfacing with the Flash device. For additional information and assistance regarding software, see Additional Resources on page 11, or explore the Web at www.spansion.com. Command Sequence (Notes) Cycles Table 12.1 Memory Array Commands Bus Cycles (1) (5) First Second Addr Data Asynchronous Read (6) 1 RA RD Reset (7) 1 XXX F0 Addr Data Third Fourth Addr Data Addr Fifth Data Sixth Addr Data Addr Data BA+X0E Data BA+X0F 2200 4 555 AA 2AA 55 [BA]555 90 [BA]X00 0001 Device ID (9) 6 555 AA 2AA 55 [BA]555 90 [BA]X01 227E Indicator Bits (10) 4 555 AA 2AA 55 [BA]555 90 [BA]X03 Data Program 4 555 AA 2AA 55 555 A0 PA PD Write to Buffer (11) 6 555 AA 2AA 55 PA 25 PA WC PA PD WBL PD Program Buffer to Flash 1 SA 29 Write to Buffer Abort Reset (12) 3 555 AA 2AA 55 555 F0 Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30 Erase/Program Suspend (13) 1 BA B0 Erase/Program Resume (14) 1 BA 30 Set Configuration Register (18) 4 555 AA 2AA 55 555 D0 X00 CR 2AA 55 555 C6 X00 CR 555 20 Autoselect(8) Manufacturer ID 555 AA [BA]555 98 Unlock Bypass Mode 4 1 Entry 3 555 AA 2AA 55 Program (16) 2 XXX A0 PA PD CFI (16) 1 XXX 98 Reset 2 XXX 90 XXX 00 Secured Silicon Sector Read Configuration Register CFI Query (15) Entry 3 555 AA 2AA 55 555 88 Program (17) 4 555 AA 2AA 55 555 A0 PA PD Read (17) 1 SA Data Exit (17) 4 555 AA 2AA 55 555 90 XXX 00 Legend: X = Don’t care RA = Read Address RD = Read Data PA = Program Address. Addresses latch on the rising edge of the AVD# pulse or active edge of CLK, whichever occurs first. PD = Program Data. Data latches on the rising edge of WE# or CE# pulse, whichever occurs first. SA = Sector Address: WS256N = A23–A14; WS128N = A22–A14. BA = Bank Address: WS256N = A23–A20; WS128N = A22–A20. CR = Configuration Register data bits D15–D0 WBL = Write Buffer Location. Address must be within the same write buffer page as PA. WC = Word Count. Number of write buffer locations to load minus 1. Notes: 1. See Table 7.1 on page 14 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells indicate read cycles. 4. Address and data bits not specified in table, legend, or notes are don’t cares (each hex digit implies 4 bits of data). 5. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset command to return the device to reading array data. 6. No unlock or command cycles required when bank is reading array data. 7. Reset command is required to return to reading array data (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information) or performing sector lock/unlock. 8. The system must provide the bank address. See Autoselect on page 21 for more information. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 73 Data Sheet (Advan ce Infor m a tio n) 9. Data in cycle 5 is 2230 (WS256N) or 2231 (WS128N). 10. See Table 7.10 on page 20 for indicator bit values. 11. Total number of cycles in the command sequence is determined by the number of words written to the write buffer. 12. Command sequence resets device for next command after write-to-buffer operation. 13. System may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 14. Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. 15. Command is valid when device is ready to read array data or when device is in autoselect mode. Address equals 55h on all future devices, but 555h for WS256N/ 128N. 16. Requires Entry command sequence prior to execution. Unlock Bypass Reset command is required to return to reading array data. 17. Requires Entry command sequence prior to execution. Secured Silicon Sector Exit Reset command is required to exit this mode; device may otherwise be placed in an unknown state. 18. Requires reset command to configure the Configuration Register. Figure 12.1 Sector Protection Commands Command Sequence (Notes) Lock Register Bits Password Protection Non-Volatile Sector Protection (PPB) Global Volatile Sector Protection Freeze (PPB Lock) Volatile Sector Protection (DYB) Cycles Bus Cycles (1) (4) First Second Addr Data Addr Third Fourth Data Addr Data 555 40 555 60 Command Set Entry (5) 3 555 AA 2AA 55 Program (6) (12) 2 XX A0 77/00 data 00 Read (6) 1 77 data Command Set Exit (7) 2 XX 90 XX Command Set Entry (5) 3 555 AA 2AA 55 Addr Data Program [0-3] (8) 2 XX A0 00 PWD[03] Read (9) 4 0...00 PWD 0 0...01 PWD1 0...02 PWD 2 0...03 PWD 3 Unlock 7 00 25 00 03 00 PWD 0 01 PWD 1 Command Set Exit (7) 2 XX 90 XX 00 Command Set Entry (5) 3 555 AA 2AA 55 [BA]55 5 C0 PPB Program (10) 2 XX A0 SA 00 All PPB Erase (10) (11) 2 XX 80 00 30 PPB Status Read 1 SA RD(0) Command Set Exit (7) 2 XX 90 XX 00 Command Set Entry (5) 3 555 AA 2AA 55 [BA]55 5 50 PPB Lock Bit Set 2 XX A0 XX 00 PPB Lock Bit Status Read 1 BA RD(0) Command Set Exit (7) 2 XX 90 XX 00 Command Set Entry (5) 3 555 AA 2AA 55 [BA]55 5 E0 DYB Set 2 XX A0 SA 00 DYB Clear 2 XX A0 SA 01 DYB Status Read 1 SA RD(0) Command Set Exit (7) 2 XX 90 XX 00 Fifth Add r 02 Data PWD 2 Sixth Add r 03 Data PWD 3 Seventh Add r Dat a 00 29 Legend: X = Don’t care RA = Address of the memory location to be read PD(0) = Secured Silicon Sector Lock Bit. PD(0), or bit[0]. PD(1) = Persistent Protection Mode Lock Bit. PD(1), or bit[1], must be set to ‘0’ for protection while PD(2), bit[2] must be left as ‘1’. PD(2) = Password Protection Mode Lock Bit. PD(2), or bit[2], must be set to ‘0’ for protection while PD(1), bit[1] must be left as ‘1’. PD(3) = Protection Mode OTP Bit. PD(3) or bit[3]. SA = Sector Address. WS256N = A23–A14; WS128N = A22–A14. BA = Bank Address. WS256N = A23–A20; WS128N = A22–A20. PWD3–PWD0 = Password Data. PD3–PD0 present four 16 bit combinations that represent the 64-bit Password PWA = Password Address. Address bits A1 and A0 are used to select each 16-bit portion of the 64-bit entity. 74 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) PWD = Password Data. RD(0), RD(1), RD(2) = DQ0, DQ1, or DQ2 protection indicator bit. If protected, DQ0, DQ1, or DQ2 = 0. If unprotected, DQ0, DQ1, DQ2 = 1. Notes: 1. All values are in hexadecimal. 2. Shaded cells indicate read cycles. 3. Address and data bits not specified in table, legend, or notes are don’t cares (each hex digit implies 4 bits of data). 4. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset command to return the device to reading array data. 5. Entry commands are required to enter a specific mode to enable instructions only available within that mode. 6. If both the Persistent Protection Mode Locking Bit and the Password Protection Mode Locking Bit are set at the same time, the command operation aborts and returns the device to the default Persistent Sector Protection Mode during 2nd bus cycle. Note that on all future devices, addresses equal 00h, but is currently 77h for the WS256N only. See Table 8.1 on page 44 and Table 8.2 on page 48 for explanation of lock bits. 7. Exit command must be issued to reset the device into read mode; device may otherwise be placed in an unknown state. 8. Entire two bus-cycle sequence must be entered for each portion of the password. 9. Full address range is required for reading password. 10. See Figure 8.2 on page 45 for details. 11. “All PPB Erase” command pre-programs all PPBs before erasure to prevent over-erasure. 12. The second cycle address for the lock register program operation is 77 for S29WS256N; however, for WS128N this address is 00. November 10, 2006 S29WS-N_00_I2 S29WS-N MirrorBitTM Flash Family 75 Data 12.1 Sheet (Advan ce Infor m a tio n) Common Flash Memory Interface The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified soft-ware algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address (BA)555h any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 12.2 on page 76 to Table 12.5 on page 77) within that bank. All reads outside of the CFI address range, within the bank, returns non-valid data. Reads from other banks are allowed, writes are not. To terminate reading CFI data, the system must write the reset command. The following is a C source code example of using the CFI Entry and Exit functions. Refer to the Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com) for general information on Spansion Flash memory software development guidelines. /* Example: CFI Entry command */ *( (UINT16 *)bank_addr + 0x555 ) = 0x0098; /* Example: CFI Exit command /* write CFI entry command */ /* write cfi exit command */ */ *( (UINT16 *)bank_addr + 0x000 ) = 0x00F0; For further information, please refer to the CFI Specification (see JEDEC publications JEP137-A and JESD68.01and CFI Publication 100). Please contact your sales office for copies of these documents. Table 12.2 CFI Query Identification String Addresses Data Description 10h 11h 12h 0051h 0052h 0059h Query Unique ASCII string “QRY” 13h 14h 0002h 0000h Primary OEM Command Set 15h 16h 0040h 0000h Address for Primary Extended Table 17h 18h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Table 12.3 System Interface String Addresses 76 Data Description 1Bh 0017h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 0019h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0006h Typical timeout per single byte/word write 2N µs 20h 0009h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 000Ah Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0004h Max. timeout for byte/word write 2N times typical 24h 0004h Max. timeout for buffer write 2N times typical 25h 0003h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) Table 12.4 Device Geometry Definition Addresses 27h Data 0019h (WS256N) 0018h (WS128N) Description Device Size = 2N byte 28h 29h 0001h 0000h Flash Device Interface description 2Ah 2Bh 0006h 0000h Max. number of bytes in multi-byte write = 2N (00h = not supported) 2Ch 0003h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 0003h 0000h 0080h 0000h Erase Block Region 1 Information 31h 00FDh (WS256N) 007Dh (WS128N) 32h 33h 34h 0000h 0000h 0002h 35h 36h 37h 38h 0003h 0000h 0080h 0000h Erase Block Region 3 Information 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information Erase Block Region 2 Information Table 12.5 Primary Vendor-Specific Extended Query (Sheet 1 of 2) Addresses Data 40h 41h 42h 0050h 0052h 0049h Description Query-unique ASCII string “PRI” 43h 0031h Major version number, ASCII 44h 0034h Minor version number, ASCII 45h 0100h Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon Technology (Bits 5-2) 0100 = 0.11 µm 46h 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 0001h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 0000h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 0008h Sector Protect/Unprotect scheme 08 = Advanced Sector Protection 4Ah 00F3h (WS256N) 007Bh (WS128N) 4Bh 0001h Burst Mode Type 00 = Not Supported, 01 = Supported 4Ch 0000h Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page, 04 = 16 Word Page 4Dh 0085h 4Eh 0095h 4Fh 0001h 50h 0001h November 10, 2006 S29WS-N_00_I2 Simultaneous Operation Number of Sectors in all banks except boot bank ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 0001h = Dual Boot Device Program Suspend. 00h = not supported S29WS-N MirrorBitTM Flash Family 77 Data Sheet (Advan ce Infor m a tio n) Table 12.5 Primary Vendor-Specific Extended Query (Sheet 2 of 2) 78 Addresses Data Description 51h 0001h 52h 0007h Secured Silicon Sector (Customer OTP Area) Size 2N bytes 53h 0014h Hardware Reset Low Time-out during an embedded algorithm to read mode Maximum 2N ns 54h 0014h Hardware Reset Low Time-out not during an embedded algorithm to read mode Maximum 2N ns 55h 0005h Erase Suspend Time-out Maximum 2N ns 56h 0005h Program Suspend Time-out Maximum 2N ns 57h 0010h Bank Organization: X = Number of banks 58h 0013h (WS256N) 000Bh (WS128N) Bank 0 Region Information. X = Number of sectors in bank 59h 0010h (WS256N) 0008h (WS128N) Bank 1 Region Information. X = Number of sectors in bank 5Ah 0010h (WS256N) 0008h (WS128N) Bank 2 Region Information. X = Number of sectors in bank 5Bh 0010h (WS256N) 0008h (WS128N) Bank 3 Region Information. X = Number of sectors in bank 5Ch 0010h (WS256N) 0008h (WS128N) Bank 4 Region Information. X = Number of sectors in bank 5Dh 0010h (WS256N) 0008h (WS128N) Bank 5 Region Information. X = Number of sectors in bank 5Eh 0010h (WS256N) 0008h (WS128N) Bank 6 Region Information. X = Number of sectors in bank 5Fh 0010h (WS256N) 0008h (WS128N) Bank 7 Region Information. X = Number of sectors in bank 60h 0010h (WS256N) 0008h (WS128N) Bank 8 Region Information. X = Number of sectors in bank 61h 0010h (WS256N) 0008h (WS128N) Bank 9 Region Information. X = Number of sectors in bank 62h 0010h (WS256N) 0008h (WS128N) Bank 10 Region Information. X = Number of sectors in bank 63h 0010h (WS256N) 0008h (WS128N) Bank 11 Region Information. X = Number of sectors in bank 64h 0010h (WS256N) 0008h (WS128N) Bank 12 Region Information. X = Number of sectors in bank 65h 0010h (WS256N) 0008h (WS128N) Bank 13 Region Information. X = Number of sectors in bank 66h 0010h (WS256N) 0008h (WS128N) Bank 14 Region Information. X = Number of sectors in bank 67h 0013h (WS256N) 000Bh (WS128N) Bank 15 Region Information. X = Number of sectors in bank Unlock Bypass 00 = Not Supported, 01=Supported S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006 D at a S hee t (Adva nce In for m ation) 13. Revision History Section Description Revision F (October 29, 2004) Global Data sheet completely revised. Changed arrangement of sections; edited explanatory text, added flowcharts. This document supersedes Revision E+1, issued August 9, 2004; only the changes specified for Revision F in this section affect the document or device. All other device specifications remain the same as presented in Revision E+1. Deleted product selector guide. 11.8.2, Synchronous/Burst Read: Deleted tAAS and tAAH from table. Modified Note 1. Table 12.4, System Interface String: Changed data at address 23h from 0003h to 0004h. Revision G (January 27, 2005) Global Updated tIACC, tBACC, tOE, CFI address 4Ah, and the Configuration Register. Added PPB Program/Erase Algorithm. Revision H (July 8, 2005) All references to VIO changed to VCC. Removed all references to the S29WS064N Global Changed CR14 to Reserved. It is pre-programmed at the factory Updated: tASP, tPSP, ICC1, ICC3, ICC4, ICC6 specifications Removed tAOE and added fMIN specifications Updated address latency tables Revision I (December 3, 2005) Added Page Mode Read information Global Revised tRACC from 9 to 8.5 ns and tAVD from 8 to 7 ns Incorporated specification bulletin's changes, clarifications and errata Added the 128 Mbit 80 MHz OPN and revised from Advanced to Preliminary Specifications Revision I1 (July 5, 2006) Program/Erase Operations Revised wording Software Reset Revised section Hardware Data Protection Methods Revised wording Revision I2 (November 10, 2006) Erase/Program Timing November 10, 2006 S29WS-N_00_I2 Updated tSEA to Min S29WS-N MirrorBitTM Flash Family 79 Data Sheet (Advan ce Infor m a tio n) Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks and Notice The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any damages of any kind arising out of the use of the information in this document. Copyright © 2004-2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners. 80 S29WS-N MirrorBitTM Flash Family S29WS-N_00_I2 November 10, 2006