SPANSION S29GL256P

S29GL-P MirrorBit® Flash Family
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit
3.0 Volt-only Page Mode Flash Memory featuring
90 nm MirrorBit Process Technology
S29GL-P MirrorBit® Flash Family Cover Sheet
Data Sheet
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume
such that subsequent versions of this document are not expected to change. However, typographical or
specification corrections, or modifications to the valid combinations offered may occur.
Publication Number S29GL-P_00
Revision A
Amendment 14
Issue Date October 22, 2012
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Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of
product information or intended specifications throughout the product life cycle, including development,
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify
that they have the latest information before finalizing their design. The following descriptions of Spansion data
sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more specific
products, but has not committed any design to production. Information presented in a document with this
designation is likely to change, and in some cases, development on the product may discontinue. Spansion
Inc. therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion Inc.
The information is intended to help you evaluate this product. Do not design in this product without
contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a commitment
to production has taken place. This designation covers several aspects of the product life cycle, including
product qualification, initial production, and the subsequent phases in the manufacturing process that occur
before full production is achieved. Changes to the technical specifications presented in a Preliminary
document should be expected while keeping these aspects of production under consideration. Spansion
places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. The Preliminary status of this document indicates that product qualification has been
completed, and that initial production has begun. Due to the phases of the manufacturing process that
require maintaining efficiency and quality, this document may be revised by subsequent versions or
modifications due to changes in technical specifications.”
Combination
Some data sheets contain a combination of products with different designations (Advance Information,
Preliminary, or Full Production). This type of document distinguishes these products and their designations
wherever necessary, typically on the first page, the ordering information page, and pages with the DC
Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first
page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal changes
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include
those affecting the number of ordering part numbers available, such as the addition or deletion of a speed
option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a
description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following
conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. Spansion Inc. deems the products to have been in sufficient production volume such
that subsequent versions of this document are not expected to change. However, typographical or
specification corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local sales office.
2
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
S29GL-P MirrorBit® Flash Family
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit
3.0 Volt-only Page Mode Flash Memory featuring
90 nm MirrorBit Process Technology
Data Sheet
General Description
The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer
that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time
than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher
density, better performance and lower power consumption.
Distinctive Characteristics
 Single 3V read/program/erase (2.7-3.6 V)
 Offered Packages
 Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on VIO input. VIO range is 1.65 to VCC
 90 nm MirrorBit process technology
 8-word/16-byte page read buffer
 32-word/64-byte write buffer reduces overall programming
time for multiple-word updates
 Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
 Uniform 64 Kword/128 Kbyte Sector Architecture
–
–
–
–
 Suspend and Resume commands for Program and Erase
operations
 Write operation status bits indicate program and erase
operation completion
 Unlock Bypass Program command to reduce programming
time
 Support for CFI (Common Flash Interface)
 Persistent and Password methods of Advanced Sector
Protection
 WP#/ACC input
S29GL01GP: One thousand twenty-four sectors
S29GL512P: Five hundred twelve sectors
S29GL256P: Two hundred fifty-six sectors
S29GL128P: One hundred twenty-eight sectors
– Accelerates programming time (when VHH is applied) for greater
throughput during system production
– Protects first or last sector regardless of sector protection settings
 Hardware reset input (RESET#) resets device
 100,000 erase cycles per sector typical
 Ready/Busy# output (RY/BY#) detects program or erase
cycle completion
 20-year data retention typical
Publication Number S29GL-P_00
– 56-pin TSOP
– 64-ball Fortified BGA
Revision A
Amendment 14
Issue Date October 22, 2012
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur.
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Performance Characteristics
Maximum Read Access Times (ns)
Density
128 & 256 Mb
512 Mb
1 Gb
Voltage Range (1)
Random Access
Time (tACC)
Page Access Time
(tPACC)
CE# Access Time
(tCE)
25
100/110
Regulated VCC
90
Full VCC
100/110
VersatileIO VIO
110
Regulated VCC
100
Full VCC
110
VersatileIO VIO
120
120
Regulated VCC
110
110
Full VCC
120
VersatileIO VIO
130
OE# Access Time
(tOE)
90
25
110
100
25
25
110
120
25
25
130
Notes
1. Access times are dependent on VCC and VIO operating ranges.
See Ordering Information page for further details.
Regulated VCC: VCC = 3.0–3.6 V.
Full VCC: VCC = VIO = 2.7–3.6 V.
VersatileIO VIO: VIO = 1.65–VCC, VCC = 2.7–3.6 V.
2. Contact a sales representative for availability.
Current Consumption (typical values)
Random Access Read (f = 5 MHz)
30 mA
8-Word Page Read (f = 10 MHz)
1 mA
Program/Erase
50 mA
Standby
1 µA
Program & Erase Times (typical values)
Single Word Programming
Effective Write Buffer Programming (VCC) Per Word
15 µs
Effective Write Buffer Programming (VHH) Per Word
13.5 µs
Sector Erase Time (64 Kword Sector)
4
60 µs
S29GL-P MirrorBit® Flash Family
0.5 s
S29GL-P_00_A14 October 22, 2012
Data
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Table of Contents
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.
Input/Output Descriptions & Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.
Physical Dimensions/Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.1
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2
Special Handling Instructions for BGA Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3
LAA064—64 ball Fortified Ball Grid Array, 11 x 13 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.4
TS056—56-Pin Standard Thin Small Outline Package (TSOP) . . . . . . . . . . . . . . . . . . . . . .
12
12
12
14
16
5.
Additional Resources. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.1
Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.2
Specification Bulletins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.3
Hardware and Software Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.4
Contacting Spansion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
17
17
17
17
6.
Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.1
Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7.
Device Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.1
Device Operation Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.2
Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.3
VersatileIOTM (VIO) Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.4
Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.5
Page Read Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.6
Autoselect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.7
Program/Erase Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.8
Write Operation Status. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.9
Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
19
20
20
20
20
21
24
36
40
8.
Advanced Sector Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.1
Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.2
Persistent Protection Bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.3
Persistent Protection Bit Lock Bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.4
Password Protection Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.5
Advanced Sector Protection Software Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.6
Hardware Data Protection Methods. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
42
43
43
45
45
48
48
9.
Power Conservation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.1
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.2
Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.3
Hardware RESET# Input Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.4
Output Disable (OE#). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
49
49
49
49
49
10.
Secured Silicon Sector Flash Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.1 Factory Locked Secured Silicon Sector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.2 Customer Lockable Secured Silicon Sector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.3 Secured Silicon Sector Entry/Exit Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . .
50
50
51
51
11.
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.2 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.3 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.4 Key to Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.5 Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.7 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
53
53
54
54
54
55
56
57
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
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12.
Appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
12.1 Command Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
12.2 Common Flash Memory Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
13.
Advance Information on S29GL-S Eclipse 65 nm MirrorBit
Power-On and Warm Reset Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
14.
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
She et
Figures
Figure 3.1
Figure 4.1
Figure 4.2
Figure 4.3
Figure 4.4
Figure 7.1
Figure 7.2
Figure 7.3
Figure 7.4
Figure 8.1
Figure 8.2
Figure 8.3
Figure 11.1
Figure 11.2
Figure 11.3
Figure 11.4
Figure 11.5
Figure 11.6
Figure 11.7
Figure 11.8
Figure 11.9
Figure 11.10
Figure 11.11
Figure 11.12
Figure 11.13
Figure 11.14
Figure 11.15
Figure 13.1
Figure 13.2
S29GL-P Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
64-ball Fortified Ball Grid Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
LAA064—64ball Fortified Ball Grid Array (FBGA), 11 x 13 mm . . . . . . . . . . . . . . . . . . . . . . .14
56-pin Standard TSOP (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
56-Pin Thin Small Outline Package (TSOP), 14 x 20 mm . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Single Word Program. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Write Buffer Programming Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Sector Erase Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Write Operation Status Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Advanced Sector Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
PPB Program Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
Lock Register Program Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47
Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Test Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Input Waveforms and Measurement Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Read Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Page Read Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58
Reset Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Power-up Sequence Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Program Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62
Accelerated Program Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62
Chip/Sector Erase Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63
Data# Polling Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63
Toggle Bit Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64
DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Alternate CE# Controlled Write (Erase/Program) Operation Timings . . . . . . . . . . . . . . . . . . 66
Power-Up Reset Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Warm Reset Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
October 22, 2012 S29GL-P_00_A14
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7
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Tables
Table 2.1
Table 6.1
Table 6.2
Table 6.3
Table 6.4
Table 7.1
Table 7.2
Table 7.3
Table 7.4
Table 7.5
Table 7.6
Table 7.7
Table 7.8
Table 7.9
Table 7.10
Table 7.11
Table 7.12
Table 7.13
Table 7.14
Table 7.15
Table 7.16
Table 7.17
Table 7.18
Table 8.1
Table 8.2
Table 10.1
Table 10.2
Table 10.3
Table 10.4
Table 11.1
Table 11.2
Table 11.3
Table 11.4
Table 11.5
Table 11.6
Table 11.7
Table 11.8
Table 11.9
Table 12.1
Table 12.2
Table 12.3
Table 12.4
Table 12.5
Table 12.6
Table 12.7
Table 12.8
Table 13.1
8
Input/Output Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
S29GL01GP Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
S29GL512P Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
S29GL256P Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
S29GL128P Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Device Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Autoselect Codes, (High Voltage Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Autoselect Addresses in System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Autoselect Entry in System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Autoselect Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Single Word/Byte Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Write Buffer Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Sector Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Chip Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
Erase Resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
Program Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Program Resume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Unlock Bypass Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
Unlock Bypass Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Unlock Bypass Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40
Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41
Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations . . . . . . . . . . . . . . .48
Secured Silicon Sector Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50
Secured Silicon Sector Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
Secured Silicon Sector Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
Secured Silicon Sector Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
Test Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
S29GL-P DC Characteristics (CMOS Compatible) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56
S29GL-P Read Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59
Power-up Sequence Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60
S29GL-P Erase and Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61
S29GL-P Alternate CE# Controlled Erase and Program Operations . . . . . . . . . . . . . . . . . . .65
Erase And Programming Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67
Package Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67
S29GL-P Memory Array Command Definitions, x16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .69
S29GL-P Sector Protection Command Definitions, x16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70
S29GL-P Memory Array Command Definitions, x8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71
S29GL-P Sector Protection Command Definitions, x8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .72
CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73
System Interface String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74
Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74
Primary Vendor-Specific Extended Query . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .75
Power On and Warm Reset Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .76
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
1.
She et
Ordering Information
The ordering part number is formed by a valid combination of the following:
S29GL01GP
12
F
F
I
01
0
PACKING TYPE
0 = Tray (standard (Note 5))
2 = 7” Tape and Reel
3 = 13” Tape and Reel
MODEL NUMBER (VIO range, protection when WP# =VIL)
01 = VIO = VCC = 2.7 to 3.6 V, highest address sector protected
02 = VIO = VCC = 2.7 to 3.6 V, lowest address sector protected
V1 = VIO = 1.65 to VCC, VCC = 2.7 to 3.6 V, highest address sector protected
V2 = VIO = 1.65 to VCC, VCC = 2.7 to 3.6 V, lowest address sector protected
R1 = VIO = VCC = 3.0 to 3.6 V, highest address sector protected
R2 = VIO = VCC = 3.0 to 3.6 V, lowest address sector protected
TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)
C = Commercial (0°C to +85°C)
PACKAGE MATERIALS SET
A = Pb (Note 1)
F = Pb-free
PACKAGE TYPE
T = 56-pin Thin Small Outline Package (TSOP) Standard Pinout(TSO56)
F = 64-ball Fortified Ball Grid Array, 1.0 mm pitch package (LAA064)
SPEED OPTION
90 = 90 ns
10 = 100 ns
11 = 110 ns
12 = 120 ns
13 = 130 ns
DEVICE NUMBER/DESCRIPTION
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
3.0 Volt-only, 1024, 512, 256 and 128 Megabit Page-Mode Flash Memory, manufactured on 90 nm MirrorBit® process technology
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
9
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Recommended Combinations
Recommended Combinations list configurations planned to be supported in volume for this device. Consult
your local sales office to confirm availability of specific recommended combinations and to check on newly
released combinations.
S29GL-P Valid Combinations
Base Part
Number
Speed
Package (2)(3)
11
12
Temperature (4)
Model Number
I, C
R1, R2
TA (1), TF
01, 02
Packing Type (5)
0, 3
I
13
V1, V2
S29GL01GP
11
12
I, C
FA (1), FF
R1, R2
01, 02
0, 2, 3
I
13
V1, V2
10
11
I, C
TA (1), TF
R1, R2
01, 02
0, 3
I
S29GL512P
12
V1, V2
10
11
I, C
FA (1), FF
R1, R2
01, 02
0, 2, 3
I
12
V1, V2
90
10, 11
S29GL128P,
S29GL256P
I, C
R1, R2
01, 02
TA (1), TF
0, 3
I
11
V1, V2
90
10, 11
I, C
FA (1), FF
R1, R2
01, 02
0, 2, 3
I
11
V1, V2
Notes
1. Contact a local sales representative for availability.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading “S29” and packing type designator from ordering part number.
4. Operating Temperature range: I = Industrial (–40°C to +85°C)
C = Commercial (0°C to +85°C)
5. Type 0 is standard. Specify other options as required.
10
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
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2. Input/Output Descriptions & Logic Symbol
Table 2.1 identifies the input and output package connections provided on the device.
Table 2.1 Input/Output Descriptions
Symbol
Type
Description
A25–A0
Input
DQ14–DQ0
I/O
DQ15/A-1
I/O
CE#
Input
Chip Enable.
Address lines for GL01GP
A24–A0 for GL512P
A23–A0 for GL256P,
A22–A0 for GL128P.
Data input/output.
DQ15: Data input/output in word mode.
A-1: LSB address input in byte mode.
OE#
Input
Output Enable.
WE#
Input
Write Enable.
VCC
Supply
Device Power Supply.
VIO
Supply
Versatile IO Input.
VSS
Supply
Ground.
NC
No Connect
RY/BY#
Output
BYTE#
Input
Selects data bus width. At VIL, the device is in byte configuration and data I/O pins DQ0DQ7 are active and DQ15/A-1 becomes the LSB address input. At VIH, the device is in
word configuration and data I/O pins DQ0-DQ15 are active.
RESET#
Input
Hardware Reset. Low = device resets and returns to reading array data.
Input
Write Protect/Acceleration Input. At VIL, disables program and erase functions in the
outermost sectors. At VHH, accelerates programming; automatically places device in
unlock bypass mode. Should be at VIH for all other conditions. WP# has an internal pullup; when unconnected, WP# is at VIH.
WP#/ACC
October 22, 2012 S29GL-P_00_A14
Not connected internally.
Ready/Busy. Indicates whether an Embedded Algorithm is in progress or complete. At
VIL, the device is actively erasing or programming. At High Z, the device is in ready.
S29GL-P MirrorBit® Flash Family
11
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3. Block Diagram
Figure 3.1 S29GL-P Block Diagram
DQ15–DQ0
RY/BY#
VCC
Sector Switches
VSS
VIO
Erase Voltage
Generator
Input/Output
Buffers
RESET#
WE#
WP#/ACC
BYTE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
STB
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
Timer
AMax**–A0 (A-1)
Address Latch
STB
VCC Detector
Data
Latch
** AMax GL01GP=A25, AMax GL512P = A24, AMax GL256P = A23, AMax GL128P = A22
4. Physical Dimensions/Connection Diagrams
This section shows the I/O designations and package specifications for the S29GL-P family.
4.1
Related Documents
The following documents contain information relating to the S29GL-P devices. Click on the title or go to
www.spansion.com download the PDF file, or request a copy from your sales office.
 Considerations for X-ray Inspection of Surface-Mounted Flash Integrated Circuits
4.2
Special Handling Instructions for BGA Package
Special handling is required for Flash Memory products in BGA packages.
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The
package and/or data integrity may be compromised if the package body is exposed to temperatures above
150°C for prolonged periods of time.
12
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
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Figure 4.1 64-ball Fortified Ball Grid Array
Top View, Balls Facing Down
NC on S29GL128P
NC on S29GL256P
NC on S29GL512P
A8
B8
C8
D8
E8
F8
G8
H8
NC
A22
A23
VIO
VSS
A24
A25
NC
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
BYTE#
DQ15/A-1
VSS
A6
B6
C6
D6
E6
F6
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
DQ4
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
A4
B4
C4
D4
E4
F4
G4
H4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
October 22, 2012 S29GL-P_00_A14
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
NC
NC
NC
NC
NC
VIO
NC
NC
S29GL-P MirrorBit® Flash Family
13
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4.3
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LAA064—64 ball Fortified Ball Grid Array, 11 x 13 mm
Figure 4.2 LAA064—64ball Fortified Ball Grid Array (FBGA), 11 x 13 mm
NOTES:
PACKAGE
LAA 064
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
13.00 mm x 11.00 mm
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
SYMBOL
MIN
NOM
MAX
A
---
---
1.40
NOTE
A1
0.40
---
---
STANDOFF
A2
0.60
---
---
BODY THICKNESS
PROFILE HEIGHT
D
13.00 BSC.
BODY SIZE
E
11.00 BSC.
BODY SIZE
D1
7.00 BSC.
MATRIX FOOTPRINT
E1
7.00 BSC.
MD
8
MATRIX SIZE D DIRECTION
ME
8
MATRIX SIZE E DIRECTION
N
64
φb
0.50
0.60
MATRIX FOOTPRINT
BALL COUNT
0.70
BALL DIAMETER
eD
1.00 BSC.
BALL PITCH - D DIRECTION
eE
1.00 BSC.
BALL PITCH - E DIRECTION
SD / SE
0.50 BSC.
NONE
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
3354 \ 16-038.12d
14
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
She et
Figure 4.3 56-pin Standard TSOP (Top View)
NC on S29GL128P
NC on S29GL256P
NC on S29GL512P
A23
A22
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
October 22, 2012 S29GL-P_00_A14
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
S29GL-P MirrorBit® Flash Family
A24
A25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
NC
VIO
15
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TS056—56-Pin Standard Thin Small Outline Package (TSOP)
Figure 4.4 56-Pin Thin Small Outline Package (TSOP), 14 x 20 mm
PACKAGE
JEDEC
SYMBOL
MO-142 (B) EC
MIN.
NOM.
MAX.
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
A
---
---
1.20
2
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
A1
0.05
---
0.15
3
A2
0.95
1.00
1.05
b1
0.17
0.20
0.23
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
b
c1
0.17
0.10
0.22
---
0.27
0.16
4
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
MOLD PROTUSION IS 0.15 mm PER SIDE.
5
c
0.10
---
0.21
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
6
THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10 mm AND 0.25 mm FROM THE LEAD TIP.
7
LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
8
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
E
13.90
14.00
14.10
e
L
0.50 BASIC
0.50
0.60
0.70
O
0˚
-
8˚
R
0.08
---
0.20
N
16
NOTES:
TS 56
56
3160\38.10A
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
5.
She et
Additional Resources
Visit www.spansion.com to obtain the following related documents:
5.1
Application Notes
The following is a list of application notes related to this product. All Spansion application notes are available
at http://www.spansion.com/Support/TechnicalDocuments/Pages/ApplicationNotes.aspx
 Using the Operation Status Bits in AMD Devices
 Understanding Page Mode Flash Memory Devices
 MirrorBit® Flash Memory Write Buffer Programming and Page Buffer Read
 Common Flash Interface Version 1.4 Vendor Specific Extensions
 MirrorBit® Flash Memory Write Buffer Programming and Page Buffer Read
 Taking Advantage of Page Mode Read on the MCF5407 Coldfire
 Migration to S29GL128N and S29GL256N based on 110nm MirrorBit® Technology
 Optimizing Program/Erase Times
 Practical Guide to Endurance and Data Retention
 Configuring FPGAs using Spansion S29GL-N Flash
 Connecting Spansion™ Flash Memory to a System Address Bus
 Connecting Unused Data Lines of MirrorBit® Flash
 Reset Voltage and Timing Requirements for MirrorBit® Flash
 Versatile IO: DQ and Enhanced
5.2
Specification Bulletins
Contact your local sales office for details.
5.3
Hardware and Software Support
Downloads and related information on Flash device support is available at
http://www.spansion.com/Support/Pages/DriversSoftware.aspx
 Spansion low-level drivers
 Enhanced Flash drivers
 Flash file system
Downloads and related information on simulation modeling and CAD modeling support is available at
http://www.spansion.com/Support/Pages/SimulationModels.aspx
 VHDL and Verilog
 IBIS
 ORCAD
5.4
Contacting Spansion
Obtain the latest list of company locations and contact information on our web site at
http://www.spansion.com/About/Pages/Locations.aspx
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
17
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6.
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Product Overview
The S29GL-P family consists of 1 Gb, 512 Mb, 256 Mb and 128 Mb, 3.0-volt-only, page mode Flash devices
optimized for today’s embedded designs that demand a large storage array and rich functionality. These
devices are manufactured using 90 nm MirrorBit technology. These products offer uniform 64 Kword
(128 Kbyte) uniform sectors and feature VersatileIO control, allowing control and I/O signals to operate from
1.65 V to VCC. Additional features include:
 Single word programming or a 32-word programming buffer for an increased programming speed
 Program Suspend/Resume and Erase Suspend/Resume
 Advanced Sector Protection methods for protecting sectors as required
 128 words/256 bytes of Secured Silicon area for storing customer and factory secured information. The
Secured Silicon Sector is One Time Programmable.
6.1
Memory Map
The S29GL-P devices consist of uniform 64 Kword (128 Kbyte) sectors organized as shown in Table 6.1–
Table 6.4.
Table 6.1 S29GL01GP Sector & Memory Address Map
Uniform Sector
Size
64 Kword/
128 Kbyte
Sector
Count
1024
Sector
Range
Address Range (16-bit)
Notes
SA00
0000000h - 000FFFFh
Sector Starting Address
:
:
SA1023
3FF0000H - 3FFFFFFh
Sector Ending Address
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA001-SA1022) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 Kb sectors have the pattern xxx0000h-xxxFFFFh.
Table 6.2 S29GL512P Sector & Memory Address Map
Uniform Sector
Size
64 Kword/
128 Kbyte
Sector
Count
512
Sector
Range
Address Range (16-bit)
Notes
SA00
0000000h - 000FFFFh
Sector Starting Address
:
:
SA511
1FF0000H - 1FFFFFFh
Sector Ending Address
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA001-SA510) have sector starting and ending addresses that the same pattern as all other sectors of
that size. For example, all 128 Kb sectors have the pattern xxx0000h-xxxFFFFh.
Table 6.3 S29GL256P Sector & Memory Address Map
Uniform Sector
Size
64 Kword/
128 Kbyte
Sector
Count
256
Sector
Range
Address Range (16-bit)
Notes
SA00
0000000h - 000FFFFh
Sector Starting Address
:
:
SA255
0FF0000H - 0FFFFFFh
Sector Ending Address
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA001-SA254) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 Kb sectors have the pattern xxx0000h-xxxFFFFh.
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Table 6.4 S29GL128P Sector & Memory Address Map
Uniform Sector
Size
Sector
Count
64 Kword/
128 Kbyte
128
Sector
Range
Address Range (16-bit)
Notes
SA00
0000000h - 000FFFFh
Sector Starting Address
:
:
SA127
07F0000 - 7FFFFF
Sector Ending Address
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges
that are not explicitly listed (such as SA001-SA510) have sector starting and ending addresses that form the same pattern as all other
sectors of that size. For example, all 128 Kb sectors have the pattern xxx0000h-xxxFFFFh.
7. Device Operations
This section describes the read, program, erase, handshaking, and reset features of the Flash devices.
Operations are initiated by writing specific commands or a sequence with specific address and data patterns
into the command registers (see Table 12.1 through Table 12.4). The command register itself does not
occupy any addressable memory location; rather, it is composed of latches that store the commands, along
with the address and data information needed to execute the command. The contents of the register serve as
input to the internal state machine and the state machine outputs dictate the function of the device. Writing
incorrect address and data values or writing them in an improper sequence may place the device in an
unknown state, in which case the system must pull the RESET# pin low or power cycle the device to return
the device to the reading array data mode.
7.1
Device Operation Table
The device must be setup appropriately for each operation. Table 7.1 describes the required state of each
control pin for any particular operation.
Table 7.1 Device Operations
DQ8–DQ15
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 1)
DQ0–DQ7
BYTE#= VIH
Read
L
L
H
H
X
AIN
DOUT
DOUT
Write (Program/Erase)
L
H
L
H
(Note 2)
AIN
(Note 3)
(Note 3)
Accelerated Program
L
H
L
H
VHH
AIN
(Note 3)
(Note 3)
Operation
BYTE#= VIL
DQ8–DQ14
= High-Z,
DQ15 = A-1
VCC ± 0.3 V
X
X
VCC ± 0.3 V
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
High-Z
High-Z
High-Z
Standby
Legend
L = Logic Low = VIL, H = Logic High = VIH, VHH = 11.5–12.5V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes
1. Addresses are AMax:A0 in word mode; AMax:A-1 in byte mode.
2. If WP# = VIL, on the outermost sector remains protected. If WP# = VIH, the outermost sector is unprotected. WP# has an internal pull-up; when unconnected,
WP# is at VIH. All sectors are unprotected when shipped from the factory (The Secured Silicon Sector can be factory protected depending on version ordered.)
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm.
October 22, 2012 S29GL-P_00_A14
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7.2
S hee t
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-DQ15 are active and controlled by CE#
and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0-DQ7 are
active and controlled by CE# and OE#. The data I/O pins DQ8-DQ14 are tri-stated, and the DQ15 pin is used
as an input for the LSB (A-1) address function.
7.3
VersatileIOTM (VIO) Control
The VersatileIOTM (VIO) control allows the host system to set the voltage levels that the device generates and
tolerates on all inputs and outputs (address, control, and DQ signals). VIO range is 1.65 to VCC. See Ordering
Information on page 9 for VIO options on this device.
For example, a VIO of 1.65-3.6 volts allows for I/O at the 1.8 or 3 volt levels, driving and receiving signals to
and from other 1.8 or 3 V devices on the same data bus.
7.4
Read
All memories require access time to output array data. In a read operation, data is read from one memory
location at a time. Addresses are presented to the device in random order, and the propagation delay through
the device causes the data on its outputs to arrive with the address on its inputs.
The device defaults to reading array data after device power-up or hardware reset. To read data from the
memory array, the system must first assert a valid address on Amax-A0, while driving OE# and CE# to VIL.
WE# must remain at VIH. All addresses are latched on the falling edge of CE#. Data will appear on DQ15DQ0 after address access time (tACC), which is equal to the delay from stable addresses to valid output data.
The OE# signal must be driven to VIL. Data is output on DQ15-DQ0 pins after the access time (tOE) has
elapsed from the falling edge of OE#, assuming the tACC access time has been meet.
7.5
Page Read Mode
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access speed for random locations within a page. The page size of
the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A(max)-A3.
Address bits A2-A0 in word mode (A2 to A-1 in byte mode) determine the specific word within a page. The
microprocessor supplies the specific word location.
The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the
locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page mode accesses
are obtained by keeping the “read-page addresses” constant and changing the “intra-read page” addresses.
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7.6
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Autoselect
The Autoselect mode provides manufacturer ID, Device identification, and sector protection information,
through identifier codes output from the internal register (separate from the memory array) on DQ7-DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed
with its corresponding programming algorithm (see Table 7.3). The Autoselect codes can also be accessed
in-system.
There are two methods to access autoselect codes. One uses the autoselect command, the other applies VID
on address pin A9.
When using programming equipment, the autoselect mode requires VID (11.5 V to 12.5 V) on address pin A9.
Address pins must be as shown in Table 7.2.
 To access Autoselect mode without using high voltage on A9, the host system must issue the Autoselect
command.
 The Autoselect command sequence may be written to an address within a sector that is either in the read
or erase-suspend-read mode.
 The Autoselect command may not be written while the device is actively programming or erasing.
 The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
sector was previously in Erase Suspend).
 It is recommended that A9 apply VID after power-up sequence is completed. In addition, it is recommended
that A9 apply from VID to VIH/VIL before power-down the VCC/VIO.
 See Table 12.1 on page 69 for command sequence details.
 When verifying sector protection, the sector address must appear on the appropriate highest order address
bits (see Table 7.4 to Table 7.5). The remaining address bits are don't care. When all necessary bits have
been set as required, the programming equipment may then read the corresponding identifier code on
DQ15-DQ0. The Autoselect codes can also be accessed in-system through the command register.
October 22, 2012 S29GL-P_00_A14
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Table 7.2 Autoselect Codes, (High Voltage Method)
Description
Device ID
Device ID
Device ID
Device ID
S29GL128P S29GL256P S29GL512P S29GL01GP
Manufacturer ID:
Spansion Product
Amax A14
to
to
CE# OE# WE# A16 A10
L
L
H
X
X
A9
A8
to
A7
VID
X
DQ8 to DQ15
A6
A5
to
A4
A3
to
A2
A1
A0
L
X
L
L
L
BYTE# BYTE#
= VIL
= VIH
00
DQ7 to DQ0
X
01h
Cycle 1
L
L
H
22
X
7Eh
Cycle 2
H
H
L
22
X
28h
H
H
H
22
X
01h
L
L
H
X
X
VID
X
L
X
Cycle 3
Cycle 1
L
L
H
22
X
7Eh
Cycle 2
H
H
L
22
X
23h
Cycle 3
H
H
H
22
X
01h
Cycle 1
L
L
H
22
X
7Eh
H
H
L
22
X
22h
H
H
H
22
X
01h
Cycle 2
L
L
L
L
H
H
X
X
X
X
VID
VID
X
X
L
L
X
X
Cycle 3
Cycle 1
L
L
H
22
X
7Eh
Cycle 2
H
H
L
22
X
21h
H
H
H
22
X
01h
L
L
H
X
X
VID
X
L
X
Cycle 3
Sector Group
Protection Verification
L
L
H
SA
X
VID
X
L
X
L
H
L
X
X
01h (protected),
00h (unprotected)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects highest
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
99h (factory locked),
19h (not factory
locked)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects lowest
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
89h (factory locked),
09h (not factory
locked)
Legend
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. VID = 11.5V to 12.5V
Table 7.3 Autoselect Addresses in System
Description
Address
Read Data (word/byte mode)
Manufacturer ID
Base + 00h
xx01h/1h
Device ID, Word 1
Base + 01h
227Eh/7Eh
Device ID, Word 2
Base + 0Eh
2228h/28h (GL01GP)
2223h/23h (GL512P)
2222h/22h (GL256P)
2221h/21h (GL128P)
Device ID, Word 3
Base + 0Fh
2201h/01h
Secure Device Verify
Base + 03h
Sector Protect Verify
(SA) + 02h
22
For S29GLxxxPH: XX19h/19h = Not Factory Locked. XX99h/99h = Factory Locked.
For S29GLxxxPL: XX09h/09h = Not Factory Locked. XX89h/89h = Factory Locked.
xx01h/01h = Locked, xx00h/00h = Unlocked
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
She et
Software Functions and Sample Code
Table 7.4 Autoselect Entry in System
(LLD Function = lld_AutoselectEntryCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
0x00AAh
Base + 555h
Base + 2AAh
0x0055h
Autoselect Command
Write
Base + AAAh
Base + 555h
0x0090h
Table 7.5 Autoselect Exit
(LLD Function = lld_AutoselectExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Autoselect Exit Command
Write
base + XXXh
base + XXXh
0x00F0h
Note
1. Any offset within the device works.
2. base = base address.
The following is a C source code example of using the autoselect function to read the manufacturer ID. Refer
to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on
Spansion Flash memory software development guidelines.
/* Here is an example of Autoselect mode (getting manufacturer ID) */
/* Define UINT16 example: typedef unsigned short UINT16; */
UINT16 manuf_id;
/* Auto Select Entry */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x0090; /* write autoselect command */
/* multiple reads can be performed after entry */
manuf_id = *( (UINT16 *)base_addr + 0x000 ); /* read manuf. id */
/*
Autoselect exit */
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0; /* exit autoselect (write reset command) */
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7.7
S hee t
Program/Erase Operations
These devices are capable of several modes of programming and or erase operations which are described in
detail in the following sections.
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing address,
command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is latched on
the 1st rising edge of WE# or CE#.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without
first writing unlock cycles within the command sequence. See Section 7.7.8 for details on the Unlock Bypass
function.
Note the following:
 When the Embedded Program algorithm is complete, the device returns to the read mode.
 The system can determine the status of the program operation by reading the DQ status bits. Refer to the
Write Operation Status on page 36 for information on these status bits.
 An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.”
 Only erase operations can convert a “0” to a “1.”
 Any commands written to the device during the Embedded Program/Erase are ignored except the
Suspend commands.
 Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
progress.
 A hardware reset and/or power removal immediately terminates the Program/Erase operation and the
Program/Erase command sequence should be reinitiated once the device has returned to the read mode
to ensure data integrity.
 Programming is allowed in any sequence and across sector boundaries for single word programming
operation. See Write Buffer Programming on page 26 when using the write buffer.
 Programming to the same word address multiple times without intervening erases is permitted.
7.7.1
Single Word Programming
Single word programming mode is one method of programming the Flash. In this mode, four Flash command
write cycles are used to program an individual Flash address. The data for this programming operation could
be 8 or 16-bits wide.
While the single word programming method is supported by most Spansion devices, in general Single Word
Programming is not recommended for devices that support Write Buffer Programming. See Table 12.1
on page 69 for the required bus cycles and Figure 7.1 for the flowchart.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by reading
the DQ status bits. Refer to Write Operation Status on page 36 for information on these status bits.
 During programming, any command (except the Suspend Program command) is ignored.
 The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
progress.
 A hardware reset immediately terminates the program operation. The program command sequence should
be reinitiated once the device has returned to the read mode, to ensure data integrity.
 Programming to the same address multiple times continuously (for example, “walking” a bit within a word)
is permitted.
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S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
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Figure 7.1 Single Word Program
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write Program Command:
Address 555h, Data A0h
Setup Command
Program Address (PA),
Program Data (PD)
Program Data to Address:
PA, PD
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Polling Status
= Busy?
Yes
No
Yes
Polling Status
= Done?
Error condition
(Exceeded Timing Limits)
No
PASS. Device is in
read mode.
October 22, 2012 S29GL-P_00_A14
FAIL. Issue reset command
to return to read array mode.
S29GL-P MirrorBit® Flash Family
25
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Software Functions and Sample Code
Table 7.6 Single Word/Byte Program
(LLD Function = lld_ProgramCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
Program Setup
Write
Program
Write
Base + AAAh
Base + 555h
00A0h
Byte Address
Word Address
Data
Note
Base = Base Address.
The following is a C source code example of using the single word program function. Refer to the Spansion
Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program Command
*/
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)base_addr + 0x2AA )
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)pa )
/* Poll for program completion */
7.7.2
=
=
=
=
0x00AA;
0x0055;
0x00A0;
data;
/*
/*
/*
/*
write
write
write
write
unlock cycle 1
unlock cycle 2
program setup command
data to be programmed
*/
*/
*/
*/
Write Buffer Programming
Write Buffer Programming allows the system to write a maximum of 32 words in one programming operation.
This results in a faster effective word programming time than the standard “word” programming algorithms.
The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in
which programming occurs. At this point, the system writes the number of “word locations minus 1” that are
loaded into the page buffer at the Sector Address in which programming occurs. This tells the device how
many write buffer addresses are loaded with data and therefore when to expect the “Program Buffer to Flash”
confirm command. The number of locations to program cannot exceed the size of the write buffer or the
operation aborts. (Number loaded = the number of locations to program minus 1. For example, if the system
programs 6 address locations, then 05h should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first address/data
pair to be programmed, and selects the “write-buffer-page” address. All subsequent address/data pairs must
fall within the elected write-buffer-page.
The “write-buffer-page” is selected by using the addresses AMAX–A5.
The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write buffer.
(This means Write Buffer Programming cannot be performed across multiple “write-buffer-pages.” This also
means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to
load programming data outside of the selected “write-buffer-page”, the operation ABORTs.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the
write buffer.
Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter is
decremented for every data load operation. Also, the last data loaded at a location before the “Program Buffer
to Flash” confirm command is the data programmed into the device. It is the software's responsibility to
comprehend ramifications of loading a write-buffer location more than once. The counter decrements for each
data load operation, NOT for each unique write-buffer-address location. Once the specified number of write
buffer locations have been loaded, the system must then write the “Program Buffer to Flash” command at the
Sector Address. Any other address/data write combinations abort the Write Buffer Programming operation.
The Write Operation Status bits should be used while monitoring the last address location loaded into the
write buffer. This eliminates the need to store an address in memory because the system can load the last
address location, issue the program confirm command at the last loaded address location, and then check
the write operation status at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored to
determine the device status during Write Buffer Programming.
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The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to
READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
 Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
 Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
 Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address”
during the “write buffer data loading” stage of the operation.
 Writing anything other than the Program to Buffer Flash Command after the specified number of “data
load” cycles.
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 =
TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-toBuffer-Abort reset” command sequence is required when using the write buffer Programming features in
Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable
when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices
are capable of handling multiple write buffer programming operations on the same write buffer address range
without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
October 22, 2012 S29GL-P_00_A14
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Software Functions and Sample Code
Table 7.7 Write Buffer Program
(LLD Functions Used = lld_WriteToBufferCmd, lld_ProgramBufferToFlashCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 555h
Base + 2AAh
0055h
3
Write Buffer Load Command
Write
Sector Address
0025h
4
Write Word Count
Write
Sector Address
Word Count (N–1)h
Number of words (N) loaded into the write buffer can be from 1 to 32 words (1 to 64 bytes).
5 to 36
Load Buffer Word N
Write
Program Address, Word N
Word N
Last
Write Buffer to Flash
Write
Sector Address
0029h
Notes
1. Base = Base Address.
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles may be from 6 to
37.
3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible.
The following is a C source code example of using the write buffer program function. Refer to the Spansion
Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Write Buffer Programming Command
*/
/* NOTES: Write buffer programming limited to 16 words. */
/*
All addresses to be written to the flash in
*/
/*
one operation must be within the same flash
*/
/*
page. A flash page begins at addresses
*/
/*
evenly divisible by 0x20.
*/
UINT16 *src = source_of_data;
/* address of source data
*/
UINT16 *dst = destination_of_data;
/* flash destination address
*/
UINT16 wc
= words_to_program -1;
/* word count (minus 1)
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)sector_address )
= 0x0025;
/* write write buffer load command */
*( (UINT16 *)sector_address )
= wc;
/* write word count (minus 1)
*/
for (i=0;i<=wc;i++)
{
*dst++ = *src++; /* ALL dst MUST BE in same Write Buffer */
}
*( (UINT16 *)sector_address )
/* poll for completion */
= 0x0029;
/* write confirm command
*/
/* Example: Write Buffer Abort Reset */
*( (UINT16 *)addr + 0x555 ) = 0x00AA;
*( (UINT16 *)addr + 0x2AA ) = 0x0055;
*( (UINT16 *)addr + 0x555 ) = 0x00F0;
28
/* write unlock cycle 1
/* write unlock cycle 2
/* write buffer abort reset
S29GL-P MirrorBit® Flash Family
*/
*/
*/
S29GL-P_00_A14 October 22, 2012
Data
She et
Figure 7.2 Write Buffer Programming Operation
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Issue
Write Buffer Load Command:
Address SA, Data 25h
Load Word Count to Program
Program Data to Address:
SA, wc
wc = number of words – 1
Yes
Confirm command:
SA = 0x29h
wc = 0?
No
Write Next Word,
Decrement wc:
wc = wc – 1
No
Perform Polling Algorithm
Write Buffer
Abort Desired?
(see Write Operation Status
flowchart)
Yes
Polling Status
= Done?
Write to a Different
Sector Address to Cause
Write Buffer Abort
Yes
No
No
Error?
Yes
Yes
Write Buffer
Abort?
No
RESET. Issue Write Buffer
Abort Reset Command
October 22, 2012 S29GL-P_00_A14
FAIL. Issue reset command
to return to read array mode.
S29GL-P MirrorBit® Flash Family
PASS. Device is in
read mode.
29
D at a
7.7.3
S hee t
Sector Erase
The sector erase function erases one or more sectors in the memory array. (See Table 12.1 on page 69 and
Figure 7.3.) The device does not require the system to preprogram a sector prior to erase. The Embedded
Erase algorithm automatically programs and verifies the entire memory to an all zero data pattern prior to
electrical erase. After a successful sector erase, all locations within the erased sector contain FFFFh. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, the sector erase time-out tSEA (50 µs) occurs. During the time-out
period, additional sector addresses may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The time between these
additional cycles must be less than 50 µs. Any sector erase address and command following the exceeded
time-out (50 µs) may or may not be accepted. Any command other than Sector Erase or Erase Suspend
during the time-out period resets that sector to the read mode. The system can monitor DQ3 to determine if
the sector erase timer has timed out (See Section 7.8.6.) The time-out begins from the rising edge of the final
WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the sector returns to reading array data and addresses are
no longer latched. The system can determine the status of the erase operation by reading DQ7 or DQ6/DQ2
in the erasing sector. Refer to Section 7.8 for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be reinitiated once that sector has returned to reading array
data, to ensure the sector is properly erased.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without
first writing unlock cycles within the command sequence. See Section 7.7.8 for details on the Unlock Bypass
function.
Figure 7.3 illustrates the algorithm for the erase operation. Refer to Section 11.7.5 for parameters and timing
diagrams.
Software Functions and Sample Code
Table 7.8 Sector Erase
(LLD Function = lld_SectorEraseCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 555h
Base + 2AAh
0055h
3
Setup Command
Write
Base + AAAh
Base + 555h
0080h
4
Unlock
Write
Base + AAAh
Base + 555h
00AAh
5
Unlock
Write
Base + 555h
Base + 2AAh
0055h
Sector Erase Command
Write
Sector Address
Sector Address
0030h
6
Unlimited additional sectors may be selected for erase; command(s) must be written within 50 µs.
The following is a C source code example of using the sector erase function. Refer to the Spansion Low Level
Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory
software development guidelines.
/* Example: Sector Erase Command */
*(
*(
*(
*(
*(
*(
30
(UINT16
(UINT16
(UINT16
(UINT16
(UINT16
(UINT16
*)base_addr + 0x555
*)base_addr + 0x2AA
*)base_addr + 0x555
*)base_addr + 0x555
*)base_addr + 0x2AA
*)sector_address )
)
)
)
)
)
=
=
=
=
=
=
0x00AA;
0x0055;
0x0080;
0x00AA;
0x0055;
0x0030;
/*
/*
/*
/*
/*
/*
write
write
write
write
write
write
S29GL-P MirrorBit® Flash Family
unlock cycle 1
*/
unlock cycle 2
*/
setup command
*/
additional unlock cycle 1 */
additional unlock cycle 2 */
sector erase command
*/
S29GL-P_00_A14 October 22, 2012
Data
She et
Figure 7.3 Sector Erase Operation
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
No
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Select
Additional
Sectors?
Yes
Write Additional
Sector Addresses
• Each additional cycle must be written within tSEA timeout
• The host system may monitor DQ3 or wait tSEA to ensure
acceptance of erase commands
• No limit on number of sectors
No
Yes
Poll DQ3.
DQ3 = 1?
Last Sector
Selected?
• Commands other than Erase Suspend or selecting additional
sectors for erasure during timeout reset device to reading array
data
No
Yes
Perform Write Operation
Status Algorithm
(see Figure 7.4)
Yes
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Done?
No
No
DQ5 = 1?
Error condition (Exceeded Timing Limits)
Yes
PASS. Device returns
to reading array.
FAIL. Write reset command
to return to reading array.
Notes
1. See Table 12.1 on page 69 for erase command sequence.
2. See DQ3: Sector Erase Timeout State Indicator on page 39 for information on the sector erase timeout.
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
31
D at a
7.7.4
S hee t
Chip Erase Command Sequence
Chip erase is a six-bus cycle operation as indicated by Table 12.1 on page 69. These commands invoke the
Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The Embedded
Erase algorithm automatically preprograms and verifies the entire memory to an all zero data pattern prior to
electrical erase. After a successful chip erase, all locations of the chip contain FFFFh. The system is not
required to provide any controls or timings during these operations. The Command Definitions on page 68
shows the address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that sector returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer
to “Write Operation Status” for information on these status bits.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without
first writing unlock cycles within the command sequence. See Section 7.7.8 for details on the Unlock Bypass
function.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that sector has returned to reading array data, to ensure the entire array is properly erased.
Software Functions and Sample Code
Table 7.9 Chip Erase
(LLD Function = lld_ChipEraseCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 555h
Base + 2AAh
0055h
3
Setup Command
Write
Base + AAAh
Base + 555h
0080h
4
Unlock
Write
Base + AAAh
Base + 555h
00AAh
5
Unlock
Write
Base + 555h
Base + 2AAh
0055h
6
Chip Erase Command
Write
Base + AAAh
Base + 555h
0010h
The following is a C source code example of using the chip erase function. Refer to the Spansion Low Level
Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory
software development guidelines.
/* Example: Chip Erase Command */
/* Note: Cannot be suspended
*/
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)base_addr + 0x2AA )
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)base_addr + 0x2AA )
*( (UINT16 *)base_addr + 0x555 )
32
=
=
=
=
=
=
0x00AA;
0x0055;
0x0080;
0x00AA;
0x0055;
0x0010;
/*
/*
/*
/*
/*
/*
write
write
write
write
write
write
S29GL-P MirrorBit® Flash Family
unlock cycle 1
*/
unlock cycle 2
*/
setup command
*/
additional unlock cycle 1 */
additional unlock cycle 2 */
chip erase command
*/
S29GL-P_00_A14 October 22, 2012
Data
7.7.5
She et
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. The sector addresses are “don't-cares” when
writing this command. This command is valid only during the sector erase operation, including the tSEA
time-out period during the sector erase command sequence. The Erase Suspend command is ignored if
written during the chip erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of 20 µs (5 µs typical) to suspend the erase operation. However, when the Erase Suspend
command is written during the sector erase time-out, the device immediately terminates the time-out period
and suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system
can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status
information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to Table 7.35 for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the program operation using write operation status bits, just as
in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to
Write Buffer Programming on page 26 and the Autoselect on page 21 for details.
To resume the sector erase operation, the system must write the Erase Resume command. The address of
the erase-suspended sector is a “don't-care” when writing this command. Further writes of the Resume
command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
Software Functions and Sample Code
Table 7.10 Erase Suspend
(LLD Function = lld_EraseSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Base + XXXh
Base + XXXh
00B0h
The following is a C source code example of using the erase suspend function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase suspend command */
*( (UINT16 *)base_addr ) = 0x00B0;
/* write suspend command
*/
Table 7.11 Erase Resume
(LLD Function = lld_EraseResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Sector Address
Sector Address
0030h
The following is a C source code example of using the erase resume function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase resume command */
*( (UINT16 *)sector_addr ) = 0x0030;
/* write resume command
/* The flash needs adequate time in the resume state */
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
*/
33
D at a
7.7.6
S hee t
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation or a
“Write to Buffer” programming operation so that data can read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the device halts the programming
operation within 15 µs maximum (5 µs typical) and updates the status bits. Addresses are “don't-cares” when
writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any nonsuspended sector. The Program Suspend command may also be issued during a programming operation
while an erase is suspended. In this case, data may be read from any addresses not within a sector in Erase
Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use
the proper command sequences to enter and exit this region.
The system may also write the Autoselect Command Sequence when the device is in Program Suspend
mode. The device allows reading Autoselect codes in the suspended sectors, since the codes are not stored
in the memory array. When the device exits the Autoselect mode, the device reverts to Program Suspend
mode, and is ready for another valid operation. See Autoselect on page 21 for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the write operation status bits, just as in the standard
program operation. See Write Operation Status on page 36 for more information.
The system must write the Program Resume command (address bits are “don't care”) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Program Resume command
are ignored. Another Program Suspend command can be written after the device has resumed programming.
Software Functions and Sample Code
Table 7.12 Program Suspend
(LLD Function = lld_ProgramSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Base + XXXh
Base + XXXh
00B0h
The following is a C source code example of using the program suspend function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr ) = 0x00B0;
/* write suspend command
*/
Table 7.13 Program Resume
(LLD Function = lld_ProgramResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Base + XXXh
Base + XXXh
0030h
The following is a C source code example of using the program resume function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr ) = 0x0030;
34
/* write resume command
S29GL-P MirrorBit® Flash Family
*/
S29GL-P_00_A14 October 22, 2012
Data
7.7.7
She et
Accelerated Program
Accelerated single word programming and write buffer programming operations are enabled through the
WP#/ACC pin. This method is faster than the standard program command sequences.
Note
The accelerated program functions must not be used more than 10 times per sector.
If the system asserts VHH on this input, the device automatically enters the aforementioned Unlock Bypass
mode and uses the higher voltage on the input to reduce the time required for program operations. The
system can then use the Write Buffer Load command sequence provided by the Unlock Bypass mode. Note
that if a “Write-to-Buffer-Abort Reset” is required while in Unlock Bypass mode, the full 3-cycle RESET
command sequence must be used to reset the device. Removing VHH from the ACC input, upon completion
of the embedded program operation, returns the device to normal operation.
 Sectors must be unlocked prior to raising WP#/ACC to VHH.
 The WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device
damage may result.
 It is recommended that WP#/ACC apply VHH after power-up sequence is completed. In addition, it is
recommended that WP#/ACC apply from VHH to VIH/VIL before powering down VCC/VIO.
7.7.8
Unlock Bypass
This device features an Unlock Bypass mode to facilitate shorter programming commands. Once the device
enters the Unlock Bypass mode, only two write cycles are required to program data, instead of the normal
four cycles.
This mode dispenses with the initial two unlock cycles required in the standard program command sequence,
resulting in faster total programming time. The Command Definitions on page 68 shows the requirements for
the unlock bypass command sequences.
During the unlock bypass mode, only the Read, Program, Write Buffer Programming, Write-to-Buffer-Abort
Reset, Unlock Bypass Sector Erase, Unlock Bypass Chip Erase and Unlock Bypass Reset commands are
valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command
sequence. The first cycle address is “don't care” and the data 90h. The second cycle need only contain the
data 00h. The sector then returns to the read mode.
Software Functions and Sample Code
The following are C source code examples of using the unlock bypass entry, program, and exit functions.
Refer to the Spansion Low Level Driver User’s Guide (available soon on www.spansion.com) for general
information on Spansion Flash memory software development guidelines.
Table 7.14 Unlock Bypass Entry
(LLD Function = lld_UnlockBypassEntryCmd)
Cycle
Description
Operation
Byte Address
1
2
3
Word Address
Data
Unlock
Write
Unlock
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
Entry Command
Write
Base + AAAh
Base + 555h
0020h
/* Example: Unlock Bypass Entry Command
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock
*( (UINT16 *)base_addr + 0x555 ) = 0x0020;
/* write unlock
/* At this point, programming only takes two write cycles.
/* Once you enter Unlock Bypass Mode, do a series of like
/* operations (programming or sector erase) and then exit
/* Unlock Bypass Mode before beginning a different type of
/* operations.
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
cycle 1
cycle 2
bypass command
*/
*/
*/
*/
*/
*/
*/
*/
35
D at a
S hee t
Table 7.15 Unlock Bypass Program
(LLD Function = lld_UnlockBypassProgramCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Program Setup
Write
Base + XXXh
Base + XXXh
00A0h
2
Program Command
Write
Program Address
Program Address
Program Data
/* Example: Unlock Bypass Program Command */
/* Do while in Unlock Bypass Entry Mode!
*/
*( (UINT16 *)base_addr ) = 0x00A0;
/* write program setup command
*/
*( (UINT16 *)pa )
= data;
/* write data to be programmed
/* Poll until done or error.
*/
/* If done and more to program, */
/* do above two cycles again.
*/
*/
Table 7.16 Unlock Bypass Reset
(LLD Function = lld_UnlockBypassResetCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Reset Cycle 1
Write
Base + XXXh
Base + XXXh
0090h
2
Reset Cycle 2
Write
Base + XXXh
Base + XXXh
0000h
/* Example: Unlock Bypass Exit Command */
*( (UINT16 *)base_addr ) = 0x0090;
*( (UINT16 *)base_addr ) = 0x0000;
7.8
Write Operation Status
The device provides several bits to determine the status of a program or erase operation. The following
subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7.
7.8.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm
is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence. Note that the Data# Polling is valid only for the last
word being programmed in the write-buffer-page during Write Buffer Programming. Reading Data# Polling
status on any word other than the last word to be programmed in the write-buffer-page returns false status
information.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# polling on DQ7 is active, then that sector returns to the read mode.
During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously
with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing
status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read
36
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
She et
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid
data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7-D00 appears on successive read
cycles.
See the following for more information: Table 7.17, shows the outputs for Data# Polling on DQ7. Figure 7.4,
shows the Data# Polling algorithm; and Figure 11.7, shows the Data# Polling timing diagram.
Figure 7.4 Write Operation Status Flowchart
START
- DQ 6 toggles when programming
- DQ 6 and DQ 2 toggle when erasing
- DQ 2 toggles when erase suspend
- DQ 1 set when program error
- DQ 5 set when time out
Read_1
Read_2
Read_3
DQ6 Toggles between
Read_1 & Read_2
and
Read_2 & Read_3
NO
Read_1
Read_2
NO
YES
WriteBuffer
program and
Read_1 DQ1 is
set
YES
RETURN
WRITE ABORT
YES
RETURN
TIME OUT
DQ2 Toggles
NO
RETURN
DONE
NO
YES
Read_1 DQ5 is
set
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
RETURN
SUSPEND
37
D at a
7.8.2
S hee t
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address that is
being programmed or erased causes DQ6 to toggle. When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100μs, then returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use
DQ7 (see DQ7: Data# Polling on page 36).
If a program address falls within a protected sector, DQ6 toggles for approximately 1μs after the program
command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program
Algorithm is complete.
See the following for additional information: Figure 7.4, Figure 11.13 on page 64, and Table 7.17.
Toggle Bit I on DQ6 requires either OE# or CE# to be de-asserted and reasserted to show the change in
state.
7.8.3
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that
is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is
valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system
reads at addresses within those sectors that have been selected for erasure. But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for
erasure. Thus, both status bits are required for sector and mode information. Refer to Table 7.17 to compare
outputs for DQ2 and DQ6. See Figure 11.14 on page 64 for additional information.
7.8.4
Reading Toggle Bits DQ6/DQ2
Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the
toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device has completed the program or erases operation. The
system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read
cycles, the system determines that the toggle bit is still toggling, the system also should note whether the
value of DQ5 is high (see DQ5: Exceeded Timing Limits on page 39). If it is, the system should then
determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5
went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erases
operation. If it is still toggling, the device did not complete the operation successfully, and the system must
write the reset command to return to reading array data. The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at
the beginning of the algorithm when it returns to determine the status of the operation. Refer to Figure 7.4 for
more details.
Note
When verifying the status of a write operation (embedded program/erase) of a memory sector, DQ6 and DQ2
toggle between high and low states in a series of consecutive and contiguous status read cycles. In order for
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S29GL-P_00_A14 October 22, 2012
Data
She et
this toggling behavior to be properly observed, the consecutive status bit reads must not be interleaved with
read accesses to other memory sectors. If it is not possible to temporarily prevent reads to other memory
sectors, then it is recommended to use the DQ7 status bit as the alternative method of determining the active
or inactive status of the write operation.
7.8.5
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully
completed. The device does not output a 1 on DQ5 if the system tries to program a 1 to a location that was
previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the
device ignores the bit that was incorrectly instructed to be programmed from a 0 to a 1, while any other bits
that were correctly requested to be changed from 1 to 0 are programmed. Attempting to program a 0 to a 1 is
masked during the programming operation. Under valid DQ5 conditions, the system must write the reset
command to return to the read mode (or to the erase-suspend-read mode if a sector was previously in the
erase-suspend-program mode).
7.8.6
DQ3: Sector Erase Timeout State Indicator
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors
are selected for erasure, the entire time-out also applies after each additional sector erase command. When
the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase
commands from the system can be assumed to be less than tSEA, then the system need not monitor DQ3.
See Sector Erase on page 30 for more details.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the device accepts additional sector erase commands. To
ensure the command has been accepted, the system software should check the status of DQ3 prior to and
following each sub-sequent sector erase command. If DQ3 is high on the second status check, the last
command might not have been accepted. Table 7.17 shows the status of DQ3 relative to the other status bits.
7.8.7
DQ1: Write to Buffer Abort
DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a “1”.
The system must issue the “Write to Buffer Abort Reset” command sequence to return the device to reading
array data. See Write Buffer Programming on page 26 for more details.
October 22, 2012 S29GL-P_00_A14
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Table 7.17 Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ1
RY/
BY#
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
N/A
0
Status
Standard
Mode
Program
Suspend
Mode
Erase
Suspend
Mode
ProgramSuspend
Read
EraseSuspend
Read
Program-Suspended
Sector
Invalid (not allowed)
1
Non-Program
Suspended Sector
Data
1
Erase-Suspended
Sector
1
No toggle
0
Non-Erase
Suspended Sector
N/A
Toggle
N/A
Data
1
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Busy (Note 3)
DQ7#
Toggle
0
N/A
N/A
0
0
Abort (Note 4)
DQ7#
Toggle
0
N/A
N/A
1
0
Write-toBuffer
Notes
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits.
Refer toDQ5: Exceeded Timing Limits on page 39 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation
7.9
Writing Commands/Command Sequences
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an
address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is
latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector, multiple sectors, or
the entire device. Table 6.1 – Table 6.4 indicate the address space that each sector occupies. The device
address space is divided into uniform 64KW/128KB sectors. A sector address is the set of address bits
required to uniquely select a sector. ICC2 in “DC Characteristics” represents the active current specification for
the write mode. “AC Characteristics” contains timing specification tables and timing diagrams for write
operations.
7.9.1
RY/BY#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC. This feature allows the host system to detect when data is ready to be read by simply
monitoring the RY/BY# pin, which is a dedicated output.
7.9.2
Hardware Reset
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET#
is driven low for at least a period of tRP (RESET# Pulse Width), the device immediately terminates any
operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write
commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading
array data.
To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the device
is ready to accept another command sequence.
When RESET# is held at VSS, the device draws VCC reset current (ICC5). If RESET# is held at VIL, but not at
VSS, the standby current is greater. RESET# may be tied to the system reset circuitry which enables the
system to read the boot-up firmware from the Flash memory upon a system reset. See Figure 11.7
on page 59 and Figure 11.8 on page 60 for timing diagrams.
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7.9.3
She et
Software Reset
Software reset is part of the command set (see Table 12.1 on page 69) that also returns the device to array
read mode and must be used for the following conditions:
1. to exit Autoselect mode
2. when DQ5 goes high during write status operation that indicates program or erase cycle was not
successfully completed
3. exit sector lock/unlock operation.
4. to return to erase-suspend-read mode if the device was previously in Erase Suspend mode.
5. after any aborted operations
Software Functions and Sample Code
Table 7.18 Reset
(LLD Function = lld_ResetCmd)
Cycle
Operation
Byte Address
Word Address
Data
Reset Command
Write
Base + xxxh
Base + xxxh
00F0h
Note
Base = Base Address.
The following is a C source code example of using the reset function. Refer to the Spansion Low Level Driver
User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software
development guidelines.
/* Example: Reset (software reset of Flash state machine) */
*( (UINT16 *)base_addr ) = 0x00F0;
The following are additional points to consider when using the reset command:
 This command resets the sectors to the read and address bits are ignored.
 Reset commands are ignored during program and erase operations.
 The reset command may be written between the cycles in a program command sequence before
programming begins (prior to the third cycle). This resets the sector to which the system was writing to the
read mode.
 If the program command sequence is written to a sector that is in the Erase Suspend mode, writing the
reset command returns that sector to the erase-suspend-read mode.
 The reset command may be written during an Autoselect command sequence.
 If a sector has entered the Autoselect mode while in the Erase Suspend mode, writing the reset command
returns that sector to the erase-suspend-read mode.
 If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to Buffer
Abort Reset” command sequence to RESET the device to reading array data. The standard RESET
command does not work during this condition.
 To exit the unlock bypass mode, the system must issue a two-cycle unlock bypass reset command
sequence [see Command Definitions on page 68 for details].
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8.
S hee t
Advanced Sector Protection/Unprotection
The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations
in any or all sectors and can be implemented through software and/or hardware methods, which are
independent of each other. This section describes the various methods of protecting data stored in the
memory array. An overview of these methods in shown in Figure 8.1.
Figure 8.1 Advanced Sector Protection/Unprotection
Hardware Methods
Software Methods
Lock Register
(One Time Programmable)
WP#/ACC = VIL
(Highest or Lowest
Sector Locked)
Password Method
Persistent Method
(DQ2)
(DQ1)
64-bit Password
(One Time Protect)
PPB Lock Bit1,2,3
0 = PPBs Locked
Memory Array
Persistent
Protection Bit
(PPB)4,5
Sector 0
PPB 0
DYB 0
Sector 1
PPB 1
DYB 1
Sector 2
PPB 2
DYB 2
Sector N-2
PPB N-2
DYB N-2
Sector N-1
PPB N-1
DYB N-1
PPB N
DYB N
3
Sector N
4. N = Highest Address Sector.
42
1 = PPBs Unlocked
1. Bit is volatile, and defaults to “1” on reset.
2. Programming to “0” locks all PPBs to their
current state.
3. Once programmed to “0”, requires hardware
reset to unlock.
5. 0 = Sector Protected,
1 = Sector Unprotected.
6. PPBs programmed individually,
but cleared collectively
S29GL-P MirrorBit® Flash Family
Dynamic
Protection Bit
(DYB)6,7,8
7. 0 = Sector Protected,
1 = Sector Unprotected.
8. Protect effective only if PPB Lock Bit is
unlocked and corresponding PPB is “1”
(unprotected).
9. Volatile Bits: defaults to user choice upon
power-up (see ordering options).
S29GL-P_00_A14 October 22, 2012
Data
8.1
She et
Lock Register
As shipped from the factory, all devices default to the persistent mode when power is applied, and all sectors
are unprotected, unless otherwise chosen through the DYB ordering option (see Ordering Information
on page 9). The device programmer or host system must then choose which sector protection method to use.
Programming (setting to “0”) any one of the following two one-time programmable, non-volatile bits locks the
part permanently in that mode:
 Lock Register Persistent Protection Mode Lock Bit (DQ1)
 Lock Register Password Protection Mode Lock Bit (DQ2)
Table 8.1 Lock Register
DQ15-3
DQ2
DQ1
DQ0
Don’t Care
Password Protection Mode
Lock Bit
Persistent Protection Mode
Lock Bit
Secured Silicon Sector
Protection Bit
For programming lock register bits refer to Table 12.2 on page 70 and Table 12.4 on page 72.
Notes
1. If the password mode is chosen, the password must be programmed before setting the
corresponding lock register bit.
2. After the Lock Register Bits Command Set Entry command sequence is written, reads and writes
for Sector 0 are disabled, while reads from other sectors are allowed until exiting this mode.
3. If both lock bits are selected to be programmed (to zeros) at the same time, the operation aborts.
4. Once the Password Mode Lock Bit is programmed, the Persistent Mode Lock Bit is permanently
disabled, and no changes to the protection scheme are allowed. Similarly, if the Persistent Mode
Lock Bit is programmed, the Password Mode is permanently disabled.
After selecting a sector protection method, each sector can operate in any of the following three states:
1. Constantly locked. The selected sectors are protected and can not be reprogrammed unless PPB
lock bit is cleared via a password, hardware reset, or power cycle.
2. Dynamically locked. The selected sectors are protected and can be altered via software
commands.
3. Unlocked. The sectors are unprotected and can be erased and/or programmed.
These states are controlled by the bit types described in Section 8.2–Section 8.5.
8.2
Persistent Protection Bits
The Persistent Protection Bits are unique and nonvolatile for each sector and have the same endurances as
the Flash memory. Preprogramming and verification prior to erasure are handled by the device, and therefore
do not require system monitoring.
Notes
1. Each PPB is individually programmed and all are erased in parallel.
2. While programming PPB for a sector, array data can be read from any other sector, except Sector
0 (used for Data# Polling) and the sector in which sector PPB is being programmed.
3. Entry command disables reads and writes for the sector selected.
4. Reads within that sector return the PPB status for that sector.
5. All Reads must be performed using the read mode.
6. The specific sector address (A25-A16 GL01GP, A24-A16 GL512P, A23-A16 GL256P, A22-A16
GL128P) are written at the same time as the program command.
7. If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-out
without programming or erasing the PPB.
October 22, 2012 S29GL-P_00_A14
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8. There are no means for individually erasing a specific PPB and no specific sector address is
required for this operation.
9. Exit command must be issued after the execution which resets the device to read mode and reenables reads and writes for Sector 0.
10. The programming state of the PPB for a given sector can be verified by writing a PPB Status Read
Command to the device as described by the flow chart shown in Figure 8.2.
Figure 8.2 PPB Program Algorithm
Enter PPB
Command Set.
Addr = BA
Program PPB Bit.
Addr = SA
Read Byte Twice
Addr = SA0
No
DQ6 =
Toggle?
Yes
No
DQ5 = 1?
Wait 500 µs
Yes
Read Byte Twice
Addr = SA0
DQ6 =
Toggle?
No
Read Byte.
Addr = SA
Yes
No
DQ0 =
'0' (Pgm.)?
FAIL
Yes
Issue Reset
Command
PASS
Exit PPB
Command Set
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8.2.1
She et
Dynamic Protection Bits
Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYBs only
control the protection scheme for unprotected sectors that have their PPBs cleared (erased to “1”). By issuing
the DYB Set or Clear command sequences, the DYBs are set (programmed to “0”) or cleared (erased to “1”),
thus placing each sector in the protected or unprotected state respectively. This feature allows software to
easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when
changes are needed.
Notes
1. The DYBs can be set (programmed to “0”) or cleared (erased to “1”) as often as needed. When the
parts are first shipped, the PPBs are cleared (erased to “1”) and upon power up or reset, the
DYBs can be set or cleared depending upon the ordering option chosen.
2. If the option to clear the DYBs after power up is chosen, (erased to “1”), then the sectorsmay be
modified depending upon the PPB state of that sector (see Table 8.2).
3. The sectors would be in the protected state If the option to set the DYBs after power up is chosen
(programmed to “0”).
4. It is possible to have sectors that are persistently locked with sectors that are left in the dynamic
state.
5. The DYB Set or Clear commands for the dynamic sectors signify protected or unprotectedstate of
the sectors respectively. However, if there is a need to change the status of the persistently locked
sectors, a few more steps are required. First, the PPB Lock Bit must be cleared by either putting
the device through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the
desired settings. Setting the PPB Lock Bit once again locks the PPBs, and the device operates
normally again.
6. To achieve the best protection, it is recommended to execute the PPB Lock Bit Set command early
in the boot code and protect the boot code by holding WP#/ACC = VIL. Note that the PPB and DYB
bits have the same function when WP#/ACC = VHH as they do when ACC =VIH.
8.3
Persistent Protection Bit Lock Bit
The Persistent Protection Bit Lock Bit is a global volatile bit for all sectors. When set (programmed to “0”), it
locks all PPBs and when cleared (programmed to “1”), allows the PPBs to be changed. There is only one
PPB Lock Bit per device.
Notes
1. No software command sequence unlocks this bit unless the device is in the password protection
mode; only a hardware reset or a power-up clears this bit.
2. The PPB Lock Bit must be set (programmed to “0”) only after all PPBs are configured to the
desired settings.
8.4
Password Protection Method
The Password Protection Method allows an even higher level of security than the Persistent Sector Protection
Mode by requiring a 64-bit password for unlocking the device PPB Lock Bit. In addition to this password
requirement, after power up and reset, the PPB Lock Bit is set “0” to maintain the password mode of
operation. Successful execution of the Password Unlock command by entering the entire password clears the
PPB Lock Bit, allowing for sector PPBs modifications.
Notes
1. There is no special addressing order required for programming the password. Once the Password
is written and verified, the Password Mode Locking Bit must be set in order to prevent access.
2. The Password Program Command is only capable of programming “0”s. Programming a “1” after a
cell is programmed as a “0” results in a time-out with the cell as a “0”.
3. The password is all “1”s when shipped from the factory.
4. All 64-bit password combinations are valid as a password.
October 22, 2012 S29GL-P_00_A14
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5. There is no means to verify what the password is after it is set.
6. The Password Mode Lock Bit, once set, prevents reading the 64-bit password on the data bus and
further password programming.
7. The Password Mode Lock Bit is not erasable.
8. The lower two address bits (A1–A0) are valid during the Password Read, Password Program, and
Password Unlock.
9. The exact password must be entered in order for the unlocking function to occur.
10. The Password Unlock command cannot be issued any faster than 1 µs at a time to prevent a
hacker from running through all the 64-bit combinations in an attempt to correctly match a
password.
11. Approximately 1 µs is required for unlocking the device after the valid 64-bit password is given to
the device.
12. Password verification is only allowed during the password programming operation.
13. All further commands to the password region are disabled and all operations are ignored.
14. If the password is lost after setting the Password Mode Lock Bit, there is no way to clear the PPB
Lock Bit.
15. Entry command sequence must be issued prior to any of any operation and it disables reads and
writes for Sector 0. Reads and writes for other sectors excluding Sector 0 are allowed.
16. If the user attempts to program or erase a protected sector, the device ignores the command and
returns to read mode.
17. A program or erase command to a protected sector enables status polling and returns to read
mode without having modified the contents of the protected sector.
18. The programming of the DYB, PPB, and PPB Lock for a given sector can be verified by writing
individual status read commands DYB Status, PPB Status, and PPB Lock Status to the device.
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Figure 8.3 Lock Register Program Algorithm
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write
Enter Lock Register Command:
Address 555h, Data 40h
XXXh = Address don’t care
Program Lock Register Data
Address XXXh, Data A0h
Address XXXh*, Data PD
Program Data (PD): See text for Lock Register definitions
Caution: Lock register can only be progammed once.
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Yes
Done?
No
DQ5 = 1?
No
Error condition (Exceeded Timing Limits)
Yes
PASS. Write Lock Register
Exit Command:
Address XXXh, Data 90h
Address XXXh, Data 00h
Device returns to reading array.
October 22, 2012 S29GL-P_00_A14
FAIL. Write rest command
to return to reading array.
S29GL-P MirrorBit® Flash Family
47
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8.5
S hee t
Advanced Sector Protection Software Examples
Table 8.2 Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations
Unique Device PPB Lock Bit
0 = locked
1 = unlocked
Any Sector
Sector PPB
0 = protected
1 = unprotected
Sector DYB
0 = protected
1 = unprotected
Sector Protection Status
0
x
Protected through PPB
0
Any Sector
0
0
x
Protected through PPB
Any Sector
0
1
1
Unprotected
Any Sector
0
1
0
Protected through DYB
Any Sector
1
0
x
Protected through PPB
Any Sector
1
0
x
Protected through PPB
Any Sector
1
1
0
Protected through DYB
Any Sector
1
1
1
Unprotected
Table 8.2 contains all possible combinations of the DYB, PPB, and PPB Lock Bit relating to the status of the
sector. In summary, if the PPB Lock Bit is locked (set to “0”), no changes to the PPBs are allowed. The PPB
Lock Bit can only be unlocked (reset to “1”) through a hardware reset or power cycle. See also Figure 8.1 for
an overview of the Advanced Sector Protection feature.
8.6
Hardware Data Protection Methods
The device offers two main types of data protection at the sector level via hardware control:
 When WP#/ACC is at VIL, the either the highest or lowest sector is locked (device specific).
There are additional methods by which intended or accidental erasure of any sectors can be prevented via
hardware means. The following subsections describes these methods:
8.6.1
WP#/ACC Method
The Write Protect feature provides a hardware method of protecting one outermost sector. This function is
provided by the WP#/ACC pin and overrides the previously discussed Sector Protection/Unprotection
method.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the
highest or lowest sector independently of whether the sector was protected or unprotected using the method
described in Advanced Sector Protection/Unprotection on page 42.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the boot sectors were last set to
be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether
they were last protected or unprotected.
The WP#/ACC pin must be held stable during a command sequence execution. WP# has an internal pull-up;
when unconnected, WP# is set at VIH.
Note
If WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased.
See Table 11.2 on page 54 for details.
8.6.2
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down.
The command register and all internal program/erase circuits are disabled, and the device resets to reading
array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the
proper signals to the control inputs to prevent unintentional writes when VCC is greater than VLKO.
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8.6.3
She et
Write Pulse “Glitch Protection”
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.6.4
Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the
rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
9. Power Conservation Modes
9.1
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET#
inputs are both held at VCC ± 0.3 V. The device requires standard access time (tCE) for read access, before it
is ready to read data. If the device is deselected during erasure or programming, the device draws active
current until the operation is completed. ICC4 in “DC Characteristics” represents the standby current
specification
9.2
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the system. ICC6 in Section 11.6
represents the automatic sleep mode current specification.
9.3
Hardware RESET# Input Operation
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET#
is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates
all outputs, and ignores all read/write commands for the duration of the RESET# pulse. The device also
resets the internal state machine to reading array data. The operation that was interrupted should be
reinitiated once the device is ready to accept another command sequence to ensure data integrity.
When RESET# is held at VSS ± 0.3 V, the device draws ICC reset current (ICC5). If RESET# is held at VIL but
not within VSS ± 0.3 V, the standby current is greater.
RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
9.4
Output Disable (OE#)
When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high
impedance state. (With the exception of RY/BY#.)
October 22, 2012 S29GL-P_00_A14
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10. Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector provides an extra Flash memory region that enables permanent part identification
through an Electronic Serial Number (ESN). The Secured Silicon Sector is 128 words in length and all
Secured Silicon reads outside of the 128-word address range returns invalid data. The Secured Silicon
Sector Indicator Bit, DQ7, (at Autoselect address 03h) is used to indicate whether or not the Secured Silicon
Sector is locked when shipped from the factory.
Please note the following general conditions:
 On power-up, or following a hardware reset, the device reverts to sending commands to the normal
address space.
 Reads outside of sector SA0 return memory array data.
 Sector SA0 is remapped from memory array to Secured Silicon Sector array.
 Once the Secured Silicon Sector Entry Command is issued, the Secured Silicon Sector Exit command
must be issued to exit Secured Silicon Sector Mode.
 The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or
Embedded Erase algorithm.
 The ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled.
Table 10.1 Secured Silicon Sector Addresses
Secured Silicon Sector
Address Range
000000h–000007h
000008h–00007Fh
10.1
Customer Lockable
ESN Factory Locked
ExpressFlash Factory Locked
Determined by
customer
ESN
ESN or determined by customer
Unavailable
Determined by customer
Factory Locked Secured Silicon Sector
The Factory Locked Secured Silicon Sector is always protected when shipped from the factory and has the
Secured Silicon Sector Indicator Bit (DQ7) permanently set to a “1”. This prevents cloning of a factory locked
part and ensures the security of the ESN and customer code once the product is shipped to the field.
These devices are available pre-programmed with one of the following:
 A random, 8 Word secure ESN only within the Secured Silicon Sector (at addresses 000000H - 000007H)
 Both a random, secure ESN and customer code through the Spansion programming service.
Customers may opt to have their code programmed through the Spansion programming services. Spansion
programs the customer's code, with or without the random ESN. The devices are then shipped from the
Spansion factory with the Secured Silicon Sector permanently locked. Contact your local representative for
details on using Spansion programming services.
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S29GL-P MirrorBit® Flash Family
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Data
10.2
She et
Customer Lockable Secured Silicon Sector
The Customer Lockable Secured Silicon Sector is always shipped unprotected (DQ7 set to “0”), allowing
customers to utilize that sector in any manner they choose. If the security feature is not required, the Secured
Silicon Sector can be treated as an additional Flash memory space.
Please note the following:
 Once the Secured Silicon Sector area is protected, the Secured Silicon Sector Indicator Bit is permanently
set to “0.”
 The Secured Silicon Sector can be read any number of times, but can be programmed and locked only
once. The Secured Silicon Sector lock must be used with caution as once locked, there is no procedure
available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector
memory space can be modified in any way.
 The accelerated programming (ACC) and unlock bypass functions are not available when the Secured
Silicon Sector is enabled.
 Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon
Sector Region command sequence which return the device to the memory array at sector 0.
10.3
Secured Silicon Sector Entry/Exit Command Sequences
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon
Sector command sequence. The device continues to access the Secured Silicon Sector region until the
system issues the four-cycle Exit Secured Silicon Sector command sequence.
See Command Definitions on page 68 [Secured Silicon Sector Command Table, Appendix
Table 12.1 on page 69 through Table 12.4 on page 72 for address and data requirements for both command
sequences.
The Secured Silicon Sector Entry Command allows the following commands to be executed
 Read customer and factory Secured Silicon areas
 Program the customer Secured Silicon Sector
After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured
Silicon Sector by using the addresses normally occupied by sector SA0 within the memory array. This mode
of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until
power is removed from the device.
Software Functions and Sample Code
The following are C functions and source code examples of using the Secured Silicon Sector Entry, Program,
and exit commands. Refer to the Spansion Low Level Driver User’s Guide (available soon on
www.spansion.com) for general information on Spansion Flash memory software development guidelines.
Table 10.2 Secured Silicon Sector Entry
(LLD Function = lld_SecSiSectorEntryCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
Entry Cycle
Write
Base + AAAh
Base + 555h
0088h
Note
Base = Base Address.
/* Example: SecSi Sector
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
October 22, 2012 S29GL-P_00_A14
Entry Command */
+ 0x555 ) = 0x00AA;
+ 0x2AA ) = 0x0055;
+ 0x555 ) = 0x0088;
/* write unlock cycle 1
/* write unlock cycle 2
/* write Secsi Sector Entry Cmd
S29GL-P MirrorBit® Flash Family
*/
*/
*/
51
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Table 10.3 Secured Silicon Sector Program
(LLD Function = lld_ProgramCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
Program Setup
Write
Base + AAAh
Base + 555h
00A0h
Program
Write
Word Address
Word Address
Data Word
Note
Base = Base Address.
/*
*(
*(
*(
*(
/*
Example: Program Command */
(UINT16 *)base_addr + 0x555 ) =
(UINT16 *)base_addr + 0x2AA ) =
(UINT16 *)base_addr + 0x555 ) =
(UINT16 *)pa ) = data; /* write
Poll for program completion */
0x00AA;
0x0055;
0x00A0;
data to
/*
/*
/*
be
write unlock cycle 1 */
write unlock cycle 2 */
write program setup command */
programmed */
Table 10.4 Secured Silicon Sector Exit
(LLD Function = lld_SecSiSectorExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
Exit Cycle 3
Write
Base + AAAh
Base + 555h
0090h
Exit Cycle 4
Write
Base + XXXh
Base + XXXh
0000h
Note
Base = Base Address.
/* Example: SecSi Sector
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
52
Exit Command */
+ 0x555 ) = 0x00AA;
+ 0x2AA ) = 0x0055;
+ 0x555 ) = 0x0090;
+ 0x000 ) = 0x0000;
/*
/*
/*
/*
write
write
write
write
S29GL-P MirrorBit® Flash Family
unlock cycle
unlock cycle
SecSi Sector
SecSi Sector
1
2
Exit cycle 3
Exit cycle 4
*/
*/
*/
*/
S29GL-P_00_A14 October 22, 2012
Data
She et
11. Electrical Specifications
11.1
Absolute Maximum Ratings
Description
Rating
Storage Temperature, Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
All Inputs and I/Os except as noted below
(Note 1)
Voltage with Respect to Ground
–0.5 V to VCC + 0.5 V
VCC (Note 1)
–0.5 V to +4.0 V
VIO
–0.5V to +4.0V
A9 and ACC (Note 2)
–0.5 V to +12.5 V
Output Short Circuit Current (Note 3)
200 mA
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot VSS to –2.0 V for periods of up
to 20 ns. See Figure 11.1. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions inputs or I/Os may overshoot to
VCC + 2.0 V for periods up to 20 ns. See Figure 11.2.
2. Minimum DC input voltage on pins A9 and ACC is -0.5V. During voltage transitions, A9 and ACC may overshoot VSS to –2.0 V for periods
of up to 20 ns. See Figure 11.1. Maximum DC voltage on pins A9 and ACC is +12.5 V, which may overshoot to 14.0 V for periods up to 20
ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 11.1 Maximum Negative Overshoot Waveform
20 ns
20 ns
+0 .8 V
–0 .5 V
–2 .0 V
20 n s
Figure 11.2 Maximum Positive Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
+2.0 V
20 ns
October 22, 2012 S29GL-P_00_A14
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20 ns
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Operating Ranges
Specifications
Range
Ambient Temperature (TA), Industrial (I) Device
–40°C to +85°C
Ambient Temperature (TA), Commercial (C) Device
0°C to +85°C
Supply Voltages
VCC
+2.7 V to 3.6 V or
+3.0 V to 3.6 V
VIO Supply Voltages
VIO
+1.65 V to VCC
Notes
1. Operating ranges define those limits between which the functionality of the device is guaranteed.
2. See also Ordering Information on page 9.
3. For valid VCC/VIO range combinations, see Ordering Information on page 9. The I/Os do not operate at 3 V when VIO = 1.8 V.
11.3
Test Conditions
Figure 11.3 Test Setup
Device
Under
Test
CL
Table 11.1 Test Specifications
All Speeds
Unit
Output Load Capacitance, CL
(including jig capacitance)
Test Condition
30
pF
Input Rise and Fall Times
5
ns
V
Input Pulse Levels
0.0–VIO
Input timing measurement reference levels (See Note)
0.5VIO
V
Output timing measurement reference levels
0.5 VIO
V
Note
If VIO < VCC, the reference level is 0.5 VIO.
11.4
Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
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Data
Waveform
11.5
She et
Inputs
Outputs
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Switching Waveforms
Figure 11.4 Input Waveforms and Measurement Levels
VIO
0.0 V
Input
0.5 VIO
Measurement Level
0.5 VIO
Output
Note
If VIO < VCC, the input measurement reference level is 0.5 VIO.
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DC Characteristics
Table 11.2 S29GL-P DC Characteristics (CMOS Compatible)
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Typ
Max
Unit
WP/ACC
±5.0
µA
Others
±2.0
ILI
Input Load Current
VIN = VSS to VCC
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC , VCC = VCC max
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 1 MHz
6
20
ICC1
VCC Active Read Current (1)
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 5 MHz
30
55
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 10 MHz
60
110
IIO2
VIO Non-Active Output
CE# = VIL, OE# = VIH
0.2
10
ICC2
VCC Intra-Page Read Current (1)
ICC3
ICC4
35
µA
±1.0
µA
mA
mA
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 10 MHz
1
10
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 33 MHz
5
20
VCC Active Erase/
Program Current (2, 3)
CE# = VIL, OE# = VIH, VCC = VCCmax
50
90
mA
VCC Standby Current
CE#, RESET# = VCC ± 0.3 V,
OE# = VIH, VCC = VCCmax
1
5
µA
250
500
µA
1
5
µA
WP#/ACC
pin
10
20
VCC pin
50
80
mA
VIL = VSS + 0.3 V/-0.1V,
ICC5
VCC Reset Current
ICC6
Automatic Sleep Mode (4)
IACC
ACC Accelerated
Program Current
VCC = VCCmax; VIL = VSS + 0.3 V/-0.1V,
RESET# = VSS ± 0.3 V
VCC = VCCmax, VIH = VCC ± 0.3 V,
VIL = VSS + 0.3 V/-0.1V, WP#/ACC = VIH
CE# = VIL, OE# = VIH,
VCC = VCCmax, WP#/ACC = VHH
mA
VIL
Input Low Voltage (5)
–0.1
0.3 x VIO
V
VIH
Input High Voltage (5)
0.7 x VIO
VIO + 0.3
V
VHH
Voltage for Program Acceleration VCC = 2.7 –3.6 V
11.5
12.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 2.7 –3.6 V
11.5
12.5
V
0.15 x VIO
V
VOL
Output Low Voltage (5)
IOL = 100 µA
VOH
Output High Voltage (5)
IOH = -100 µA
VLKO
Low VCC Lock-Out Voltage (3)
0.85 x VIO
2.3
V
2.5
V
Notes
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor tACC + 30 ns.
5. VIO = 1.65–3.6 V
6. VCC = 3 V and VIO = 3V or 1.8V. When VIO is at 1.8V, I/O pins cannot operate at 3V.
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Data
11.7
She et
AC Characteristics
11.7.1
S29GL-P Read Operations
Table 11.3 S29GL-P Read Operations
Parameter
JEDEC
Std.
Speed Options
Description
(Notes)
Test Setup
90
100
110
120
130
–
100
110
120
–
–
–
110
120
130
VIO = VCC = 3.0 V
90
100
110
–
–
VIO = VCC = 2.7 V
–
100
110
120
–
–
–
110
120
130
VIO = VCC = 3.0 V
90
100
110
–
–
VIO = VCC = 2.7 V
–
100
110
120
–
–
–
110
120
130
90
100
110
–
–
VIO = VCC = 2.7 V
tAVAV
tAVQV
tELQV
tRC
tACC
tCE
VIO = 1.65 V to VCC,
VCC = 3 V
Read Cycle Time
VIO = 1.65 V to VCC,
VCC = 3 V
Address to Output Delay (1)
VIO = 1.65 V to VCC,
VCC = 3 V
Chip Enable to Output Delay (2)
Min
Max
Max
VIO = VCC = 3.0 V
tPACC
Unit
ns
ns
ns
Page Access Time
Max
25
ns
tGLQV
tOE
Output Enable to Output Delay
Max
25
ns
tEHQZ
tDF
Chip Enable to Output High Z (3)
Max
20
ns
tGHQZ
tDF
Output Enable to Output High Z (3)
Max
20
ns
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
Output Enable Hold Time
(3)
Read
Min
0
ns
tOEH
Toggle and
Data# Polling
Min
10
ns
tCEH
Chip Enable Hold Time
Read
Min
35
ns
tAXQX
Notes
1. CE#, OE# = VIL
2. OE# = VIL
3. Not 100% tested.
4. See Figure 11.3 and Table 11.1 for test specifications.
5. Unless otherwise indicated, AC specifications for 110 ns speed options are tested with VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested
with VIO = 1.8 V and VCC = 3.0 V.
October 22, 2012 S29GL-P_00_A14
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Figure 11.5 Read Operation Timings
tRC
Addresses Stable
Addresses
tACC
CE#
tCEH
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Note
For Figure 11.5, parameters tCEH and tOEH are specific to a read cycle following a flash write operation.
Figure 11.6 Page Read Timings
Same Page
Amax:A3
A2:A0
(See Note)
Aa
tACC
Data Bus
Ab
tPACC
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
Note
Figure 11.6 shows word mode. Addresses are A2:A-1 for byte mode.
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Data
11.7.2
She et
S29GL-P Hardware Reset (RESET#) Operation
Table 11.4 Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
Speed
Unit
tReady
RESET# Pin Low (During Embedded Algorithms) to
Read Mode or Write mode
Min
35
µs
tReady
RESET# Pin Low (NOT During Embedded Algorithms)
to Read Mode or Write mode
Min
35
µs
tRP
RESET# Pulse Width
Min
35
µs
tRH
Reset High Time Before Read
Min
200
ns
tRPD
RESET# Low to Standby Mode
Min
10
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Figure 11.7 Reset Timings
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
October 22, 2012 S29GL-P_00_A14
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Table 11.5 Power-up Sequence Timings
Parameter
Description
Speed
Unit
Min
35
µs
Reset Low Time from rising edge of VIO (or last Reset pulse) to
rising edge of RESET#
Min
35
µs
Reset High Time before Read
Min
200
ns
tVCS
Reset Low Time from rising edge of VCC (or last Reset pulse) to
rising edge of RESET#
tVIOS
tRH
Notes
1. VIO < VCC + 200 mV.
2. VIO and VCC ramp must be synchronized during power up.
3. If RESET# is not stable for tVCS or tVIOS:
The device does not permit any read and write operations.
A valid read operation returns FFh.
A hardware reset is required.
4. VCC maximum power-up current (RST=VIL) is 20 mA.
Figure 11.8 Power-up Sequence Timings
VCC
VCC min
VIO
VIO min
tRH
CE#
RESET#
60
tVIOS
tVCS
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
11.7.3
She et
S29GL-P Erase and Program Operations
Table 11.6 S29GL-P Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
130
90
100
110
120
130
Unit
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
ns
ns
tAH
Address Hold Time
Min
45
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
30
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tWLAX
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
tWHWH1
tWHWH2
tWHWH1
Typ
480
µs
Effective Write Buffer Program Operation (Notes 2, 4)
Per Word
Typ
15
µs
Accelerated Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation (Note 2)
Word
Typ
54
µs
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
35
µs
tBUSY
Erase/Program Valid to RY/BY# Delay
Max
90
ns
tSEA
Sector Erase Timeout
Max
50
µs
Notes
1. Not 100% tested.
2. See Section 11.6 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
October 22, 2012 S29GL-P_00_A14
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Figure 11.9 Program Operation Timings
Program Command Sequence (last two cycles)
tAS
tWC
555h
Addresses
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
A0h
Data
PD
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 11.10 Accelerated Program Timing Diagram
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
tVHH
Notes
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 11.3 and Table 11.1 for test specifications.
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Figure 11.11 Chip/Sector Erase Operation Timings
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 36.)
2. These waveforms are for the word mode
Figure 11.12 Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
Status Data
Status Data
True
Valid Data
High Z
DQ6–DQ0
True
Valid Data
tBUSY
RY/BY#
Notes
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
2. tOE for data polling is 45 ns when VIO = 1.65 to 2.7 V and is 35 ns when VIO = 2.7 to 3.6 V
3. CE# does not need to go high between status bit reads
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Figure 11.13 Toggle Bit Timings (During Embedded Algorithms)
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ2 and DQ6
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note
A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle CE# does
not need to go high between status bit reads
Figure 11.14 DQ2 vs. DQ6
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system can use OE# or CE# to toggle DQ2 and DQ6.
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11.7.4
She et
S29GL-P Alternate CE# Controlled Erase and Program Operations
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
Description
(Notes)
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tELAX
tDVEH
tEHDX
tGHEL
90
100
110
120
130
Unit
90
100
110
120
130
ns
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDS
Data Setup Time
Min
30
ns
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHEL
Read Recovery Time Before Write
(OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
tWHWH2
tWHWH2
Write Buffer Program Operation (Notes 2, 3)
Typ
480
µs
Effective Write Buffer Program Operation (Notes 2, 4)
Per Word
Typ
15
µs
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation (Note 2)
Word
Typ
54
µs
Typ
0.5
sec
Sector Erase Operation (Note 2)
Notes
1. Not 100% tested.
2. See DC Characteristics on page 56 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with VIO = 1.8 V and VCC = 3.0 V.
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
65
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Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes
1. Figure 11.15 indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
66
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
11.7.5
She et
Erase And Programming Performance
Table 11.8 Erase And Programming Performance
Typ
(Note 1)
Max
(Note 2)
Unit
0.5
3.5
sec
S29GL128P
64
256
S29GL256P
128
512
Parameter
Sector Erase Time
Chip Erase Time
S29GL512P
256
1024
S29GL01GP
512
2048
sec
Total Write Buffer Time (Note 3)
480
µs
Total Accelerated Write Buffer Programming Time
(Note 3)
432
µs
Chip Program Time
S29GL128P
123
S29GL256P
246
S29GL512P
492
S29GL01GP
984
Comments
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
sec
Notes
1. Typical program and erase times assume the following conditions: 25°C, 3.6 V VCC, 10,000 cycles, checkerboard pattern.
2. Under worst case conditions of -40°C, VCC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 12.1–12.4.
11.7.6
TSOP Pin and BGA Package Capacitance
Table 11.9 Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
10
pF
COUT
Output Capacitance
VOUT = 0
10
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
10
pF
WP#/ACC
Separated Control Pin
VIN = 0
42
45
pF
RESET#
Separated Control Pin
VIN = 0
25
28
pF
CE#
Separated Control Pin
VIN = 0
22
25
pF
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 100 MHz.
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
67
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12. Appendix
This section contains information relating to software control or interfacing with the Flash device. For
additional information and assistance regarding software, see Section 5. For the latest information, explore
the Spansion web site at www.spansion.com.
12.1
Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Tables 12.1–12.4 define the valid register command sequences. Writing incorrect address and
data values or writing them in the improper sequence can place the device in an unknown state. A reset
command is then required to return the device to reading array data.
68
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
She et
Command (Notes)
Cycles
Table 12.1 S29GL-P Memory Array Command Definitions, x16
Bus Cycles (Notes 1–5)
First
Second
Addr
Data
1
RA
RD
Reset (7)
1
XXX
F0
Autoselect (8,9)
Read (6)
Addr
Third
Data
Addr
Fourth
Data
Addr
Fifth
Data
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID (8)
6
555
AA
2AA
55
555
90
X01
227E
Sector Protect Verify (10)
4
555
AA
2AA
55
555
90
[SA]X02
(10)
Secure Device Verify (11)
4
555
AA
2AA
55
555
90
X03
(11)
1
55
98
CFI Query (12)
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (13)
6
555
AA
2AA
55
SA
25
SA
WC
Program Buffer to Flash (Confirm)
1
SA
29
Write-to-Buffer-Abort Reset (14)
3
555
AA
2AA
55
555
F0
555
20
Unlock Bypass
Program
Enter
3
555
AA
2AA
55
Program (15)
2
XXX
A0
PA
PD
Sector Erase (15)
2
XXX
80
SA
30
Chip Erase (15)
2
XXX
80
XXX
10
Reset (16)
00
Sixth
Addr
Data
Addr
Data
X0E
(8)
X0F
(8)
WBL
PD
WBL
PD
2
XXX
90
XXX
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend/Program Suspend (17)
1
XXX
B0
Erase Resume/Program Resume (18)
1
XXX
30
Secured Silicon Sector Entry
3
555
AA
2AA
55
555
88
Secured Silicon Sector Exit (19)
4
555
AA
2AA
55
555
90
XX
00
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on
the falling edge of the WE# or CE# pulse, whichever happens later.
Notes
1. See Table 7.1 on page 19 for description of bus operations.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits AMAX:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (AMAX is the Highest Address pin.).
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when
device is in the autoselect mode, or if DQ5 goes high (while the device is
providing status data).
8. See Table 7.2 on page 22 for device ID values and definitions.
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are
read cycles.
10. The data is 00h for an unprotected sector and 01h for a protected sector.
See Autoselect on page 21 for more information. This is same as PPB
Status Read except that the protect and unprotect statuses are inverted
here.
11. The data value for DQ7 is “1” for a serialized, protected Secured Silicon
Sector region and “0” for an unserialized, unprotected region. See
Table 7.3 on page 22 for data and definitions.
October 22, 2012 S29GL-P_00_A14
PD = Data to be programmed at location PA. Data latches on the rising edge
of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits Amax–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write
buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
12. Command is valid when device is ready to read array data or when device
is in autoselect mode.
13. Depending on the number of words written, the total number of cycles may
be from 6 to 37.
14. Command sequence returns device to reading array after being placed in
a Write-to-Buffer-Abort state. Full command sequence is required if
resetting out of abort while in Unlock Bypass mode.
15. The Unlock-Bypass command is required prior to the Unlock-BypassProgram command.
16. The Unlock-Bypass-Reset command is required to return to reading array
data when the device is in the unlock bypass mode.
17. The system can read and program/program suspend in non-erasing
sectors, or enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
18. The Erase Resume/Program Resume command is valid only during the
Erase Suspend/Program Suspend modes.
19. The Exit command returns the device to reading the array.
S29GL-P MirrorBit® Flash Family
69
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Password
Protection
Lock
Register
Command (Notes)
Global
Non-Volatile
Global
Volatile Freeze
Bus Cycles (Notes 1–5)
First/Seventh
Second
Third
Fourth
Addr
Data
Addr
Data
Addr
Data
555
40
555
60
Command Set Entry
3
555
AA
2AA
55
Program (6)
2
XXX
A0
XXX
DATA
RD
Addr
Data
Read (6)
1
00
Command Set Exit (7, 8)
2
XXX
90
XXX
00
Command Set Entry
3
555
AA
2AA
55
Password Program (9)
2
XXX
A0
PWA x
PWD x
Password Read (10)
4
00
PWD0
01
PWD 1
02
PWD 2
03
PWD 3
00
25
00
03
00
PWD 0
01
PWD 1
00
29
XXX
90
XXX
00
555
C0
555
50
555
E0
Password Unlock (10)
Command Set Exit (7, 8)
Volatile
Cycles
Table 12.2 S29GL-P Sector Protection Command Definitions, x16
Fifth
Sixth
Addr
Data
Addr
Data
02
PWD 2
03
PWD 3
7
2
PPB Command Set Entry
3
555
AA
2AA
55
PPB Program (11, 12)
2
XXX
A0
SA
00
All PPB Erase (13)
2
XXX
80
00
30
PPB Status Read (12)
1
SA
RD (0)
PPB Command Set Exit (7, 8)
2
XXX
90
XXX
00
PPB Lock Command Set Entry
3
555
AA
2AA
55
PPB Lock Set (12)
2
XXX
A0
XXX
00
PPB Lock Status Read (12)
1
XXX
RD (0)
PPB Lock Command Set Exit (7, 8)
2
XXX
90
XXX
00
DYB Command Set Entry
3
555
AA
2AA
55
DYB Set (11, 12)
2
XXX
A0
SA
00
DYB Clear (12)
2
XXX
A0
SA
01
XXX
00
DYB Status Read (12)
1
SA
RD (0)
DYB Command Set Exit (7, 8)
2
XXX
90
Legend
X = Don’t care
RD(0) = Read data.
SA = Sector Address. Address bits Amax–A16 uniquely select any sector.
PWD = Password
PWDx = Password word0, word1, word2, and word3.
Data = Lock Register Contents: PD(0) = Secured Silicon Sector Protection Bit,
PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection
Mode Lock Bit.
Notes
1. See Table 7.1 on page 19 for description of bus operations.
7. The Exit command returns the device to reading the array.
2. All values are in hexadecimal.
8. If any Command Set Entry command was written, an Exit command must
be issued to reset the device into read mode.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits AMAX:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (AMAX is the Highest Address pin.)
6. All Lock Register bits are one-time programmable. Program state = “0” and
the erase state = “1.” The Persistent Protection Mode Lock Bit and the
Password Protection Mode Lock Bit cannot be programmed at the same
time or the Lock Register Bits Program operation aborts and returns the
device to read mode. Lock Register bits that are reserved for future use
default to “1’s.” The Lock Register is shipped out as “FFFF’s” before Lock
Register Bit program execution.
70
9. For PWDx, only one portion of the password can be programmed per each
“A0” command.
10. Note that the password portion can be entered or read in any order as long
as the entire 64-bit password is entered or read.
11. If ACC = VHH, sector protection matches when ACC = VIH.
12. Protected State = “00h,” Unprotected State = “01h.”
13. The All PPB Erase command embeds programming of all PPB bits before
erasure.
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
She et
Command (Notes)
Cycles
Table 12.3 S29GL-P Memory Array Command Definitions, x8
Bus Cycles (Notes 1–5)
First
Addr
Data
RD
Read (6)
1
RA
Reset (7)
Autoselect (8,9)
Second
Addr
Third
Data
Addr
Fourth
Data
Addr
Fifth
Data
1
XXX
F0
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID (8)
6
AAA
AA
555
55
AAA
90
X02
XX7E
Sector Protect Verify (10)
4
AAA
AA
555
55
AAA
90
[SA]X04
(10)
Secure Device Verify (11)
4
AAA
AA
555
55
AAA
90
X06
(11)
CFI Query (12)
1
AA
98
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer (13)
6
AAA
AA
555
55
SA
25
SA
WC
Program Buffer to Flash (confirm)
1
SA
29
Write-to-Buffer-Abort Reset (14)
Sixth
Addr
Data
Addr
Data
X1C
(8)
X1E
(8)
WBL
PD
WBL
PD
AAA
AA
555
55
AAA
F0
3
AAA
AA
555
55
AAA
20
Program (15)
2
XXX
A0
PA
PD
Sector Erase (15)
2
XXX
80
SA
30
Chip Erase (15)
2
XXX
80
XXX
10
Reset (16)
2
XXX
90
XXX
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Erase Suspend/Program Suspend (17)
1
XXX
B0
Erase Resume/Program Resume (18)
1
XXX
30
Secured Silicon Sector Entry
3
AAA
AA
555
55
AAA
88
Secured Silicon Sector Exit (19)
4
AAA
AA
555
55
AAA
90
XX
00
Unlock Bypass
3
Enter
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on
the falling edge of the WE# or CE# pulse, whichever happens later.
Notes
1. See Table 7.1 on page 19 for description of bus operations.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits AMAX:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (AMAX is the Highest Address pin.).
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when
device is in the autoselect mode, or if DQ5 goes high (while the device is
providing status data).
8. See Table 7.2 on page 22 for device ID values and definitions.
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are
read cycles.
10. The data is 00h for an unprotected sector and 01h for a protected sector.
See Autoselect on page 21 for more information. This is same as PPB
Status Read except that the protect and unprotect statuses are inverted
here.
11. The data value for DQ7 is “1” for a serialized, protected Secured Silicon
Sector region and “0” for an unserialized, unprotected region. See
Table 7.3 on page 22 for data and definitions.
October 22, 2012 S29GL-P_00_A14
PD = Data to be programmed at location PA. Data latches on the rising edge
of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits Amax–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write
buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
12. Command is valid when device is ready to read array data or when device
is in autoselect mode.
13. Depending on the number of words written, the total number of cycles may
be from 6 to 69.
14. Command sequence returns device to reading array after being placed in
a Write-to-Buffer-Abort state. Full command sequence is required if
resetting out of abort while in Unlock Bypass mode.
15. The Unlock-Bypass command is required prior to the Unlock-BypassProgram command.
16. The Unlock-Bypass-Reset command is required to return to reading array
data when the device is in the unlock bypass mode.
17. The system can read and program/program suspend in non-erasing
sectors, or enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
18. The Erase Resume/Program Resume command is valid only during the
Erase Suspend/Program Suspend modes.
19. The Exit command returns the device to reading the array.
S29GL-P MirrorBit® Flash Family
71
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Bus Cycles (Notes 1–5)
First/Seventh
Second/Eighth
Addr
Data
Addr
Data
Addr
Data
AA
555
55
AAA
40
XXX
DATA
00
AAA
60
02
Command Set Entry
3
AAA
Bits Program (6)
2
XXX
A0
Read (6)
1
00
RD
Command Set Exit (7, 8)
2
XXX
90
XXX
Command Set Entry
3
AAA
AA
555
55
Password Program (9)
2
XXX
A0
PWA x
PWD x
Password Read (10)
8
Password Unlock (10)
11
Command Set Exit (7, 8)
2
PPB Command Set Entry
3
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
PWD 2
03
PWD 3
04
PWD 4
05
PWD 5
03
PWD 3
01
PWD 1
PWD 6
07
PWD 7
00
25
00
03
00
PWD 0
01
PWD 1
02
PWD 2
04
PWD 4
05
PWD 5
06
PWD 6
07
PWD 7
00
29
XXX
90
XXX
00
AAA
AA
55
55
AAA
C0
2
XXX
A0
SA
00
All PPB Erase (13)
2
XXX
80
00
30
PPB Status Read (12)
1
SA
RD(0)
00
AAA
50
AAA
E0
Global
Non-Volatile
PWD0
06
PPB Program (11, 12)
PPB Command Set Exit (7, 8)
2
XXX
90
XXX
PPB Lock Command Set Entry
3
AAA
AA
555
55
PPB Lock Bit Set (12)
2
XXX
A0
XXX
00
00
Volatile
Third
00
Global
Volatile Freeze
Password Protection
Lock Register
Command (Notes)
Cycles
Table 12.4 S29GL-P Sector Protection Command Definitions, x8
PPB Lock Status Read (12)
1
XXX
RD(0)
PPB Lock Command Set Exit (7, 8)
2
XXX
90
XXX
DYB Command Set Entry
3
AAA
AA
555
55
DYB Set (11, 12)
2
XXX
A0
SA
00
DYB Clear (12)
2
XXX
A0
SA
01
DYB Status Read (12)
1
SA
RD(0)
DYB Command Set Exit (7, 8)
2
XXX
90
XXX
00
Legend
X = Don’t care
RD(0) = Read data.
SA = Sector Address. Address bits Amax–A16 uniquely select any sector.
PWD = Password
PWDx = Password word0, word1, word2, and word3.
Data = Lock Register Contents: PD(0) = Secured Silicon Sector Protection Bit,
PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection
Mode Lock Bit.
Notes
1. See Table 7.1 on page 19 for description of bus operations.
7. The Exit command returns the device to reading the array.
8. If any Command Set Entry command was written, an Exit command must
be issued to reset the device into read mode.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits AMAX:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (AMAX is the Highest Address pin.)
6. All Lock Register bits are one-time programmable. Program state = “0” and
the erase state = “1.” The Persistent Protection Mode Lock Bit and the
Password Protection Mode Lock Bit cannot be programmed at the same
time or the Lock Register Bits Program operation aborts and returns the
device to read mode. Lock Register bits that are reserved for future use
default to “1’s.” The Lock Register is shipped out as “FFFF’s” before Lock
Register Bit program execution.
72
9. For PWDx, only one portion of the password can be programmed per each
“A0” command.
10. Note that the password portion can be entered or read in any order as long
as the entire 64-bit password is entered or read.
11. If ACC = VHH, sector protection matches when ACC = VIH.
12. Protected State = “00h,” Unprotected State = “01h.”
13. The All PPB Erase command embeds programming of all PPB bits before
erasure.
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
12.2
She et
Common Flash Memory Interface
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h any time the device is ready to read array data. The system can read CFI information at the addresses
given in Tables 12.6–12.8). All reads outside of the CFI address range, returns non-valid data. Reads from
other sectors are allowed, writes are not. To terminate reading CFI data, the system must write the reset
command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 12.6–12.8.
The system must write the reset command to return the device to reading array data.
The following is a C source code example of using the CFI Entry and Exit functions. Refer to the Spansion
Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: CFI Entry command */
*( (UINT16 *)base_addr + 0x55 ) = 0x0098;
/* Example: CFI Exit command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0;
/* write CFI entry command
/* write cfi exit command
*/
*/
For further information, please refer to the CFI Specification (see JEDEC publications JEP137-A and
JESD68.01and CFI Publication 100). Please contact your sales office for copies of these documents.
Table 12.5 CFI Query Identification String
Addresses
(x16)
Addresses
(x8)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
October 22, 2012 S29GL-P_00_A14
Description
S29GL-P MirrorBit® Flash Family
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Table 12.6 System Interface String
Addresses (x16)
Addresses (x8)
Data
1Bh
36h
0027h
Description
VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Ch
38h
0036h
VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0006h
Typical timeout per single byte/word write 2N µs
20h
40h
0006h
Typical timeout for buffer write 2N µs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2N ms
0013h = 1 Gb
0012h = 512 Mb
Typical timeout for full chip erase 2N ms (00h = not supported)
22h
44h
23h
46h
0003h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0003h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0002h
Max. timeout for full chip erase 2N times typical (00h = not supported)
0011h = 256 Mb
0010h = 128 Mb
Table 12.7 Device Geometry Definition
Addresses (x16)
74
Addresses (x8)
Data
27h
4Eh
001Bh
001Ah
0019h
0018h
Description
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0006h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
62h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
Device Size = 2N byte
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
Data
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Table 12.8 Primary Vendor-Specific Extended Query
Addresses (x16)
Addresses (x8)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
0014h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
45h
8Ah
Description
Process Technology (Bits 7-2) 0101b = 90 nm MirrorBit
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0000h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0008h
Sector Protect/Unprotect scheme
0008h = Advanced Sector Protection
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0002h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
4Eh
9Ch
00C5h
4Fh
9Eh
00xxh
50h
A0h
0001h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
WP# Protection
October 22, 2012 S29GL-P_00_A14
04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top WP#
protect
Program Suspend
00h = Not Supported, 01h = Supported
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13. Advance Information on S29GL-S Eclipse 65 nm MirrorBit
Power-On and Warm Reset Timing
At power on, the flash requires additional time in the reset state to self configure than it does during a warm
reset. Table 13.1 and Figure 13.1 and Figure 13.2 detail the power on and warm reset timing requirements for
the GL-P, and GL-S flash.
Table 13.1 Power On and Warm Reset Timing Requirements
Parameter
Description
Type
GL-P
GL-S
tVCS
VCC Setup Time to first access
min
35 µs
300 µs
tVIOS
VIO Setup Time to first access
min
35 µs
300 µs
tRPH
RESET# Low to CE# Low
min
35 µs
35 µs
Power on Reset
tRP
RESET# Low to RESET# High
min
35 µs
200 ns (2)
tRH
RESET# High to CE# Low
min
200 ns
50 ns (2)
tCEH
CE# High to CE# Low
min
N/A
20 ns
tRPH
RESET# Low to CE# Low
min
35 µs
35 µs
Warm Reset
tRP
RESET# Low to RESET# High
min
35 µs
200 ns (2)
tRH
RESET# High to CE# Low
min
200 ns
50 ns (2)
tCEH
CE# High to CE# Low
min
N/A
20 ns
Notes:
1. N/A = Not Applicable.
2. For GL-S, tRP + tRH must not be less than tRPH.
Figure 13.1 Power-Up Reset Timing
Note:
The sum of tRP and tRH must be equal to or greater than tRPH.
76
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
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Figure 13.2 Warm Reset Timing
Note:
The sum of tRP and tRH must be equal to or greater than tRPH.
The differences in power-on timing should not present a migration challenge for most applications where the
flash interfaces directly with a Host that requires oscillator and PLL lock prior to initiating the first boot read
access to the flash. In applications which may access the flash within 300 µs of power application, some
circuit modification will be required to accommodate migration to GL-S flash.
To initiate the first read or write cycle after power on, the GL-S requires CE# or OE# to transition from High to
Low no sooner than tVCS after VCC exceeds VCC_min and VIO exceeds VIO_min. CE# or OE# must be High at
least tCEH = 20 ns prior to CE# or OE# falling edge which initiates the first access.
CE# is ignored during Warm Reset; however, to initiate the first read or write cycle after warm reset, the GL-S
requires CE# to transition from High to Low no sooner than tRH after RESET# transitions from Low to High.
CE# must be high at least tCEH = 20 ns prior to CE# falling edge, which initiates first access. These were not
requirements for the GL-P so designs that have CE# fixed low cannot migrate to GL-S without modification to
enable active CE# control.
The GL-S allows VIO to ramp concurrently with or after VCC with no restriction on time or voltage differential.
During power ramp no input is allowed to exceed VIO. The GL-S data sheet provides enhanced direction on
power management and control to design a robust and reliable system.
October 22, 2012 S29GL-P_00_A14
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14. Revision History
Section
Description
Revision A0 (October 29, 2004)
Initial Release.
Revision A1 (October 20, 2005)
Global
Revised all sections of document.
Revision A2 (October 19, 2006)
Global
Revised all sections of document. Reformatted document to new template. Changed speed options
for S29GL01GP.
Revision A3 (November 21, 2006)
AC Characteristics
Erase and Program Operations table: Changed tBUSY to a maximum specification.
Revision A4 (December 18, 2006)
Global
Changed tACC, tCE specifications on 128 Mb, 256 Mb, and 512 Mb devices. Added 90 and 100 ns
speed options.
Write Buffer Programming, Sector
Erase
Write Buffer Programming Operation, Sector Erase Operation figures: Deleted “Wait 4 ms” box from
flowcharts.
Password Protection Method
Lock Register Program Algorithm figure: Deleted “Wait 4 ms” box from flowchart.
Read-only Operations table
Modified tRC, tACC, tCE, tOE specifications.
Program and Erase Operations tables
Changed tDS specification, deleted write cycle time note.
TSOP Pin and BGA Capacitance table
Changed all specifications in table.
Revision A5 (May 18, 2007)
Global
Changed data sheet status to Preliminary.
Deleted references to requirement for external WP# pull-up.
Performance Characteristics
Max. Read Access Times table: Added note.
Hardware Reset
Deleted note from section.
AC Characteristics
Reset Timings figure: Deleted note.
Command Definitions tables
S29GL-P Sector Protection Command Definitions tables: Changed “Global Non-Volatile Freeze” to
“Global Volatile Freeze”.
DC Characteristics
CMOS Compatible table: Changed ICC1 maximum current for 5 MHz and MHz test conditions.
Page Read Timings figure
Corrected address range for top waveform.
Revision A6 (October 23, 2007)
Performance Characteristics
Changed speed options for S29GL512P
Ordering Information
Corrected samples OPN valid combinations; changed speed options for S29GL512P
64-Ball Fortified BGA
Clarified ball “D1” connection
56-Pin TSOP
Clarified pin “30” connection
Autoselect
Added recommendation statement
Accelerated Program
Added recommendation statement
Persistent Protection Bits
Removed “Erase” from title and flow chart
Secured Silicon Sector
Sections “Factory Locked Secured Silicon Sector” & “Customer Lockable Secured Silicon Sector”:
clarified shipping options
Power-up Sequence Timing
Changed tRH from “Max” to “Min” value
Advance Information on S29GL-R
65 nm MirrorBit Hardware Reset
(RESET#) and Power-up Sequence
Added section
Global
Fixed cross-references that were not live hyperlinks.
Revision A7 (November 8, 2007)
Advance Information on S29GL-R 65
nm MirrorBit Hardware Reset (RESET#) Changed timing specs and waveforms
and Power-up Sequence
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S29GL-P_00_A14 October 22, 2012
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Section
Description
Revision A8 (November 28, 2007)
Ordering Information
New commercial operating temperature option
Operating Ranges
New operating temperature range
Revision A9 (February 15, 2008)
Electrical Specification
Modified Test Conditions
Erase and Programming Performance
Chip Program Time: removed comment
Sector Protection Command Definition,
x16 Table
Corrected Lock Register “Read” address
Advance Information on S29GL-R 65
nm MirrorBit Hardware Reset (RESET#) Power-Up Sequence Timings Table: modified Note 2 - reduced timing from 500 µs to 300 µs
and Power-up Sequence
Revision A10 (March 19, 2008)
Global
Changed document status to Full Production.
DC Characteristics
Changed Max values for Input Load Current (ILI)
Sector Protection Command Definitions
(x16 & x8 tables)
Changed Lock Register Read command from “DATA” to “RD”
Revision A11 (June 11, 2008)
Ordering Information
Revised Commercial temperature range
Figure: Write Operation Status
Flowchart
Updated flowchart
Revision A12 (November 20, 2009)
Table Input/Output Descriptions
Removed RFU description
Figure 64-ball Fortified Ball Grid Array
Changed all RFU pins to NC pins
Figure 56-pin Standard TSOP (Top
View)
Changed all RFU pins to NC pins
Table Autoselect Exit
Changed cycle description to Auto Select Exit Command
Table Chip Erase
Erase Suspend/Erase Resume
Changed address of last C source code command from 0x000h to 0x555h
Changed first paragraph, second sentence to sector address is “don't care” for Erase Suspend
Changed sixth paragraph, second sentence to sector address is “don't care” for Erase Suspend
Tables
Program Suspend
Program Resume
Unlock Bypass Entry
Added Byte Address to tables
Unlock Bypass Program
Unlock Bypass Reset
Unlock Bypass
Third paragraph, first sentence added unlock bypass Sector Erase and unlock bypass Chip Erase
as valid commands
Changed paragraph, third sentence to sector address of exit command is “don't care”.
Writing Commands/Command
Sequence
Changed tables listed in fourth sentence to Table 6.1-6.4
WP#/ACC Method
Changed table listed in Note section to 11.2.
Secured Silicon Sector Entry/Exit
Command Sequence
Added source code for program under Table 10.3
Table Secured Silicon Sector Exit
Changed Byte and Word addresses of Exit Cycle to “XXXh”
Figure Test Setup
Changed test setup to show only a load of CL
Table Test Specification
Removed Output Load Test Condition
Table S29GL-P Erase and Program
Operations
Removed tGHWL
Table S29GL-P Alternate CE#
Controlled Erase and Program
Operations
Change Note 2 to “DC Characteristics”
October 22, 2012 S29GL-P_00_A14
Changed description of tGHEL to (OE# High to CE# Low)
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TSOP Pin and BGA Package
Capacitance
S hee t
Description
Changed RESET# values.
Changed number of cycles for Device ID to 6
Table S29GL-P Memory Array
Command Definitions, x16
Changed number of cycles for Write Buffer to 6
Added note regarding the number of cycles in a Write Buffer command
Changed number of cycles for Device ID to 6
Table S29GL-P Memory Array
Command Definitions, x8
Changed number of cycles for Write Buffer to 6
Added note regarding the number of cycles in a Write Buffer command
Table System Interface String
Changed value of address 20h (x16) to 0009h and description to
“Typical timeout for buffer write 2n µs”
Added values of 128 Mb-512 Mb densities to address 22h (x16)
Table Device Geometry Definition
For address 31h (x16) corrected x8 address
Revision A13 (November 17, 2010)
Performance Characteristics
Updated access time options for S29GL512P
Ordering Information
Updated speed options for S29GL512P
Read Operation Timing Figure
Added note
Revision A14 (October 22, 2012)
Sector Erase
Clarified tSEA
Erase Suspend
Clarified tSEA
Writing Commands/Command
Sequences
Sub-section RY/BY#: Clarified last sentence
Figure Advanced Sector Protection/
Unprotection
Corrected Note numbering
Table S29GL-P Memory Array
Command Definitions, x8
Corrected Address for 3rd Cycle of Write-To-Buffer-Abort Reset command
Table System Interface String
Changed value of address 20h (x16) to 0006h
Advance Information on S29GL-R
65 nm MirrorBit Hardware Reset
(RESET#) and Power-up Sequence
Updated section title to Advance Information on S29GL-S Eclipse 65 nm MirrorBit Power-On and
Warm Reset Timing
80
Updated section to cover GL-S Power-On and Warm Reset Timing
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A14 October 22, 2012
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Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 2004–2012 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™ and
combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries. Other names used
are for informational purposes only and may be trademarks of their respective owners.
October 22, 2012 S29GL-P_00_A14
S29GL-P MirrorBit® Flash Family
81