SPANSION S29GL512N10TAI020

S29GL-N
MirrorBit™ Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit™ Process Technology
Data Sheet
Notice to Readers: This document states the current technical specifications
regarding the Spansion product(s) described herein. Spansion Inc. deems the
products to have been in sufficient production volume such that subsequent
versions of this document are not expected to change. However, typographical
or specification corrections, or modifications to the valid combinations offered
may occur.
Publication Number S29GL-N_00
Revision B
Amendment 3
Issue Date October 13, 2006
D a t a
S h e e t
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their design. The following descriptions of Spansion data sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more
specific products, but has not committed any design to production. Information presented in a
document with this designation is likely to change, and in some cases, development on the product may discontinue. Spansion Inc. therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion Inc. The
information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these aspects of production under consideration. Spansion places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance Information, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or VIO range. Changes
may also include those needed to clarify a description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion Inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local sales office.
ii
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
S29GL-N
MirrorBit™ Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit™ Process Technology
Data Sheet
Distinctive Characteristics
Architectural Advantages

Single power supply operation
— 3 volt read, erase, and program operations

Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels)
and outputs are determined by voltage on VIO input.
VIO range is 1.65 to VCC

Manufactured on 110 nm MirrorBit process
technology

Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer

Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128
Kbyte) sectors
— S29GL256N: Two hundred fifty-six 64 Kword (128
Kbyte) sectors
— S29GL128N: One hundred twenty-eight 64 Kword
(128 Kbyte) sectors

Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection

100,000 erase cycles per sector typical

20-year data retention typical
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Software & Hardware Features

Software features
— Program Suspend and Resume: read other sectors
before programming operation is completed
— Erase Suspend and Resume: read/program other
sectors before an erase operation is completed
— Data# polling and toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices

Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Product Availability Table
Density
512 Mb
Performance Characteristics

High performance
—
—
—
—
—

90 ns access time (S29GL128N, S29GL256N)
100 ns (S29GL512N)
8-word/16-byte page read buffer
25 ns page read times
16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
256 Mb
128 Mb
Init. Access
VCC
Availability
110 ns
Full
Now
100 ns
Full
Now
110 ns
Full
Now
100 ns
Full
Now
90 ns
Regulated
Now
110 ns
Full
Now
100 ns
Full
Now
90 ns
Regulated
Now
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Publication Number S29GL-N_00
Revision B
Amendment 3
Issue Date October 13, 2006
D a t a
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General Description
The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as
33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as
16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as
8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also
function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed
either in the host system or in standard EPROM programmers.
Access times as fast as 90 ns (S29GL128N, S29GL256N), 100 ns (S29GL512N) are available.
Note that each access time has a specific operating voltage range (VCC) and an I/O voltage
range (VIO), as specified in the Product Selector Guide‚ on page 6 and the Ordering Information‚ on page 12. The devices are offered in a 56-pin TSOP or 64-ball Fortified BGA
package. Each device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a single 3.0 volt power supply for both read and write functions.
In addition to a VCC input, a high-voltage accelerated program (WP#/ACC) input provides
shorter programming times through increased current. This feature is intended to facilitate
factory throughput during system production, but may also be used in the field if desired.
The devices are entirely command set compatible with the JEDEC single-power-supply
Flash standard. Commands are written to the device using standard microprocessor write
timing. Write cycles also internally latch addresses and data needed for the programming and
erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed
without affecting the data contents of other sectors. The device is fully erased when shipped
from the factory.
Device programming and erasure are initiated through command sequences. Once a program
or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6
(toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether
the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four.
The Enhanced VersatileI/O™ (VIO) control allows the host system to set the voltage levels
that the device generates and tolerates on all input levels (address, chip control, and DQ input
levels) to the same voltage level that is asserted on the VIO pin. This allows the device to
operate in a 1.8 V or 3 V system environment as required.
Hardware data protection measures include a low VCC detector that automatically inhibits
write operations during power transitions. Persistent Sector Protection provides in-system, command-enabled protection of any combination of sectors using a single power supply
at VCC. Password Sector Protection prevents unauthorized write and erase operations in
any combination of sectors through a user-defined 64-bit password.
The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase
operation. The Program Suspend/Program Resume feature enables the host system to
pause a program operation in a given sector to read any other sector and then complete the
program operation.
The hardware RESET# pin terminates any operation in progress and resets the device,
after which it is then ready for a new operation. The RESET# pin may be tied to the system
reset circuitry. A system reset would thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
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S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
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The device reduces power consumption in the standby mode when it detects specific voltage
levels on CE# and RESET#, or when addresses have been stable for a specified period of time.
The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can
be permanently protected. Once this sector is protected, no further changes within the sector
can occur.
The Write Protect (WP#/ACC) feature protects the first or last sector by asserting a logic
low on the WP# pin.
MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically
erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
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Table of Contents
Notice On Data Sheet Designations . . . . . . . . . . . ii
Common Flash Memory Interface (CFI) . . . . . . 46
— Product Availability Table .................................................. 1
Table 8. CFI Query Identification String ................................ 46
Table 9. System Interface String ......................................... 47
Table 10. Device Geometry Definition ................................... 48
Table 11. Primary Vendor-Specific Extended Query ................ 49
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .6
S29GL512N ..............................................................................................................6
S29GL256N, S29GL128N ....................................................................................6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .8
Special Package Handling Instructions ............................................................9
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
S29GL512N ......................................................................................................... 11
S29GL256N ........................................................................................................ 11
S29GL128N ........................................................................................................ 11
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 12
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 13
Table 1. Device Bus Operations ........................................... 13
Word/Byte Configuration .................................................................................13
VersatileIOTM (VIO) Control ..............................................................................13
Requirements for Reading Array Data ......................................................... 14
Page Mode Read .............................................................................................. 14
Writing Commands/Command Sequences ................................................. 14
Write Buffer ..................................................................................................... 14
Accelerated Program Operation ............................................................... 14
Autoselect Functions ......................................................................................15
Standby Mode ........................................................................................................15
Automatic Sleep Mode .......................................................................................15
RESET#: Hardware Reset Pin ..........................................................................15
Output Disable Mode ........................................................................................ 16
Table 2. Sector Address Table–S29GL512N ........................... 16
Table 3. Sector Address Table–S29GL256N ........................... 28
Table 4. Sector Address Table–S29GL128N ........................... 34
Autoselect Mode .................................................................................................37
Table 5. Autoselect Codes (High Voltage Method) ................. 37
Sector Protection ................................................................................................38
Persistent Sector Protection .......................................................................38
Password Sector Protection ........................................................................38
WP# Hardware Protection .........................................................................38
Selecting a Sector Protection Mode .........................................................38
Advanced Sector Protection ...........................................................................38
Lock Register ........................................................................................................39
Table 6. Lock Register ........................................................ 39
Persistent Sector Protection ...........................................................................39
Dynamic Protection Bit (DYB) ...................................................................39
Persistent Protection Bit (PPB) ................................................................. 40
Persistent Protection Bit Lock (PPB Lock Bit) ...................................... 41
Table 7. Sector Protection Schemes ..................................... 41
Persistent Protection Mode Lock Bit ........................................................... 41
Password Sector Protection ........................................................................... 42
Password and Password Protection Mode Lock Bit ............................... 42
64-bit Password ...................................................................................................43
Persistent Protection Bit Lock (PPB Lock Bit) ...........................................43
Secured Silicon Sector Flash Memory Region ............................................43
Write Protect (WP#) ....................................................................................... 44
Hardware Data Protection ..............................................................................45
Low VCC Write Inhibit ................................................................................45
Write Pulse Glitch Protection ....................................................................45
Logical Inhibit ...................................................................................................45
Power-Up Write Inhibit ................................................................................45
4
Command Definitions . . . . . . . . . . . . . . . . . . . . . 50
Reading Array Data ...........................................................................................50
Reset Command .................................................................................................50
Autoselect Command Sequence ..................................................................... 51
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence ............................................................................. 51
Word Program Command Sequence ............................................................ 51
Unlock Bypass Command Sequence ........................................................ 52
Write Buffer Programming .......................................................................... 52
Accelerated Program .................................................................................... 53
Figure 1. Write Buffer Programming Operation ...................... 54
Figure 2. Program Operation ............................................... 55
Program Suspend/Program Resume Command Sequence .................... 55
Figure 3. Program Suspend/Program Resume........................ 56
Chip Erase Command Sequence ................................................................... 56
Sector Erase Command Sequence ................................................................ 57
Figure 4. Erase Operation ................................................... 58
Erase Suspend/Erase Resume Commands .................................................. 58
Lock Register Command Set Definitions .................................................... 59
Password Protection Command Set Definitions ...................................... 59
Non-Volatile Sector Protection Command Set Definitions ..................60
Global Volatile Sector Protection Freeze Command Set .......................61
Volatile Sector Protection Command Set .................................................. 62
Secured Silicon Sector Entry Command ..................................................... 62
Secured Silicon Sector Exit Command ........................................................ 62
Command Definitions ........................................................................................63
Table 12. Memory Array Commands (x16) ........................... 63
Table 13. Sector Protection Commands (x16) ........................ 64
Table 14. Memory Array Commands (x8) ............................. 65
Table 15. Sector Protection Commands (x8) .......................... 66
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 67
DQ7: Data# Polling ............................................................................................ 67
Figure 5. Data# Polling Algorithm ........................................ 68
RY/BY#: Ready/Busy# .......................................................................................68
DQ6: Toggle Bit I ...............................................................................................69
Figure 6. Toggle Bit Algorithm ............................................. 70
DQ2: Toggle Bit II ............................................................................................... 71
Reading Toggle Bits DQ6/DQ2 ...................................................................... 71
DQ5: Exceeded Timing Limits ......................................................................... 71
DQ3: Sector Erase Timer ................................................................................ 72
DQ1: Write-to-Buffer Abort ........................................................................... 72
Table 16. Write Operation Status ......................................... 72
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 73
Figure 7. Maximum Negative Overshoot Waveform ................ 73
Figure 8. Maximum Positive Overshoot Waveform.................. 73
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . 73
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 74
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Figure 9. Test Setup .......................................................... 75
Table 17. Test Specifications ............................................... 75
Key to Switching Waveforms . . . . . . . . . . . . . . . 76
Figure 10. Input Waveforms and
Measurement Levels .......................................................... 76
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 77
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
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Read-Only Operations ......................................................................................77
Figure 11. Read Operation Timings ....................................... 78
Figure 12. Page Read Timings .............................................. 78
Hardware Reset (RESET#) ...............................................................................79
Figure 13. Reset Timings..................................................... 79
Erase and Program Operations ..................................................................... 80
Figure 14. Program Operation Timings .................................. 81
Figure 15. Accelerated Program Timing Diagram .................... 81
Figure 16. Chip/Sector Erase Operation Timings ..................... 82
Figure 17. Data# Polling Timings
(During Embedded Algorithms) ............................................ 83
Figure 18. Toggle Bit Timings (During Embedded Algorithms) .. 84
Figure 19. DQ2 vs. DQ6 ...................................................... 84
Alternate CE# Controlled Erase and Program OperationsS29GL128N, S29GL256N, S29GL512N ......................................................... 85
Operation Timings.............................................................. 86
Erase And Programming Performance . . . . . . . . 87
TSOP Pin and BGA Package Capacitance . . . . . 87
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 88
TS056—56-Pin Standard Thin Small Outline Package (TSOP) .............88
LAA064—64-Ball Fortified Ball Grid Array (FBGA) ...............................89
Advance Information on S29GL-P Hardware Reset
(RESET#) and Power-up Sequence . . . . . . . . . . . 90
Table 18. Hardware Reset (RESET#) ....................................90
Figure 21. Reset Timings .................................................... 90
Table 19. Power-Up Sequence Timings .................................91
Figure 22. Power-On Reset Timings...................................... 91
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 20. Alternate CE# Controlled Write (Erase/Program)
October 13, 2006 S29GL-N_00B3
S29GL-N MirrorBit™ Flash Family
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Product Selector Guide
S29GL512N
Part Number
Speed Option
S29GL512N
VIO = 2.7–3.6 V
VCC = 2.7–3.6 V
10
11
VIO = 1.65–3.6 V
11
Max. Access Time (ns)
100
110
110
Max. CE# Access Time (ns)
100
110
110
Max. Page access time (ns)
25
25
30
Max. OE# Access Time (ns)
25
35
35
S29GL256N, S29GL128N
Part Number
S29GL256N, S29GL128N
VIO = 2.7–3.6 V
VCC = 2.7–3.6 V
10
11
VIO = 1.65–1.95 V
Speed Option
VCC = Regulated (3.0–3.6 V)
VIO = Regulated (3.0–3.6
V)
11
90
Max. Access Time (ns)
90
100
110
110
Max. CE# Access Time (ns)
90
100
110
110
Max. Page access time (ns)
25
25
25
30
Max. OE# Access Time (ns)
25
25
35
35
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S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
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Block Diagram
VCC
DQ15–DQ0 (A-1)
RY/BY#
Sector Switches
VSS
VIO
Erase Voltage
Generator
RESET#
WE#
WP#/ACC
BYTE#
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
AMax**–A0
Timer
Address Latch
STB
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
** AMax GL512N = A24, AMax GL256N = A23, AMax GL128N = A22
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
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Connection Diagrams
NC for S29GL128N
8
A23
A22
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56-Pin Standard TSOP
S29GL-N MirrorBit™ Flash Family
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
A24
NC
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
NC
VIO
NC for S29GL256N
and S29GL128N
S29GL-N_00_B3 October 13, 2006
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Connection Diagrams
64-ball Fortified BGA
Top View, Balls Facing Down
A8
B8
C8
D8
E8
F8
G8
H8
NC
A22
A231
VIO
VSS
A242
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
A6
B6
C6
D6
E6
F6
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
A4
B4
C4
D4
E4
F4
G4
H4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
BYTE# DQ15/A-1
VSS
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
NC
NC
NC
NC
NC
VIO
NC
NC
Notes:
1.
Ball C8 is NC on S29GL128N
2.
Ball F8 is NC on S29GL256N and S29GL128N
Special Package Handling Instructions
Special handling is required for Flash Memory products in molded packages (TSOP, BGA). The
package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time.
S29GL-N_00_B3 October 13, 2006
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Pin Description
10
A24–A0
A23–A0
A22–A0
DQ14–DQ0
DQ15/A-1
=
=
=
=
=
CE#
OE#
WE#
WP#/ACC
=
=
=
=
RESET#
BYTE#
RY/BY#
VCC
=
=
=
=
VIO
VSS
NC
=
=
=
25 Address inputs (512 Mb)
24 Address inputs (256 Mb)
23 Address inputs (128 Mb)
15 Data inputs/outputs
DQ15 (Data input/output, word mode), A-1 (LSB
Address input, byte mode)
Chip Enable input
Output Enable input
Write Enable input
Hardware Write Protect input;
Acceleration input
Hardware Reset Pin input
Selects 8-bit or 16-bit mode
Ready/Busy output
3.0 volt-only single power supply
(see Product Selector Guide for speed options and
voltage supply tolerances)
Output Buffer power
Device Ground
Pin Not Connected Internally
S29GL-N MirrorBit™ Flash Family
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Logic Symbol
S29GL512N
25
A24–A0
16 or 8
DQ15–DQ0
(A-1)
CE#
OE#
WE#
WP#/ACC
RESET#
VIO
RY/BY#
BYTE#
S29GL256N
24
A23–A0
16 or 8
DQ15–DQ0
(A-1)
CE#
OE#
WE#
WP#/ACC
RESET#
VIO
RY/BY#
BYTE#
S29GL128N
23
A22–A0
CE#
16 or 8
DQ15–DQ0
(A-1)
OE#
WE#
WP#/ACC
RESET#
VIO
RY/BY#
BYTE#
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Ordering Information
The ordering part number is formed by a valid combination of the following:
S29GL512N
11
F
F
I
01
0
PACKING TYPE
0
2
3
= Tray (standard; see note 1)
= 7” Tape and Reel
= 13” Tape and Reel
MODEL NUMBER (VIO range, protection when WP# =VIL)
01
02
V1
V2
R1
R2
=
=
=
=
=
=
VIO = VCC = 2.7 to 3.6 V, highest address sector protected
VIO = VCC = 2.7 to 3.6 V, lowest address sector protected
VIO = 1.65 to 3.6 V, VCC = 2.7 to 3.6 V, highest address sector protected
VIO = 1.65 to 3.6 V, VCC = 2.7 to 3.6 V, lowest address sector protected
VIO = VCC = 3.0 to 3.6 V, highest address sector protected
VIO = VCC = 3.0 to 3.6 V, lowest address sector protected
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
PACKAGE MATERIALS SET
A
F
= SnPb
= Pb-free (Recommended)
PACKAGE TYPE
T
F
= Thin Small Outline Package (TSOP) Standard Pinout (TS056)
= Fortified Ball Grid Array, 1.0 mm pitch package (LAA064)
SPEED OPTION
90
10
11
= 90 ns (Note 4)
= 100 ns (Note 4)
= 110 ns (Recommended)
DEVICE NUMBER/DESCRIPTION
S29GL128N, S29GL256N, S29GL512N
3.0 Volt-only, 512 Megabit (32 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBitTM process technology
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of
specific valid combinations and to check on newly released combinations.
S29GL-N Valid Combinations
Base Part Number
Speed (ns)
Package
Temperature
90
S29GL128N
10, 11
TA, TF (Note 2); FA, FF (Note 3)
I
10, 11
Notes:
11
1.
2.
3.
4.
12
0, 2, 3 (Note 1)
R1, R2
TA, TF (Note 2); FA, FF (Note 3)
I
11
S29GL512N
01, 02
V1, V2
90
10, 11
Packing Type
R1, R2
11
S29GL256N
Model Number
01, 02
0, 2, 3 (Note 1)
V1, V2
TA, TF (Note 2); FA, FF (Note 3)
I
01, 02
0, 2, 3 (Note 1)
V1, V2
Type 0 is standard. Specify other options as required. TSOP can be packed in Types 0 and 3; BGA
can be packed in Types 0, 2, 3.
TSOP package marking omits packing type designator from ordering part number.
BGA package marking omits leading “S29” and packing type designator from ordering part
number.
Contact a local sales representative for availability.
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy
any addressable memory location. The register is a latch used to store the commands, along
with the address and data information needed to execute the command. The contents of the
register serve as inputs to the internal state machine. The state machine outputs dictate the
function of the device. Table 1 lists the device bus operations, the inputs and control levels
they require, and the resulting output. The following subsections describe each of these operations in further detail.
Table 1.
Device Bus Operations
DQ8–DQ15
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 1)
DQ0–
DQ7
BYTE#
= VIH
Read
L
L
H
H
X
AIN
DOUT
DOUT
Write (Program/Erase)
L
H
L
H
Note 2
AIN
(Note 3)
(Note
3)
Accelerated Program
L
H
L
H
VHH
AIN
(Note 3)
(Note
3)
VCC ±
0.3 V
X
X
VCC ±
0.3 V
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
High-Z
High-Z
High-Z
Operation
Standby
BYTE#
= VIL
DQ8–DQ14
= High-Z,
DQ15 = A-1
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5V, X = Don’t Care, SA = Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are AMax:A0 in word mode; AMax:A-1 in byte mode. Sector addresses are AMax:A16 in both modes.
2. If WP# = VIL, the first or last sector group remains protected. If WP# = VIH, the first or last sector is protected or
unprotected as determined by the method described in “Write Protect (WP#)”. All sectors are unprotected when
shipped from the factory (The Secured Silicon Sector may be factory protected depending on version ordered.)
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2, Figure 4,
and Figure 5).
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0–DQ15 are
active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins
DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are
tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
VersatileIOTM (VIO) Control
The VersatileIOTM (VIO) control allows the host system to set the voltage levels that the device generates and tolerates on CE# and DQ I/Os to the same voltage level that is asserted
on VIO. See Ordering Information for VIO options on this device.
For example, a VI/O of 1.65–3.6 volts allows for I/O at the 1.8 or 3 volt levels, driving and
receiving signals to and from other 1.8 or 3 V devices on the same data bus.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
13
D a t a
S h e e t
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL.
CE# is the power control and selects the device. OE# is the output control and gates array
data to the output pins. WE# should remain at VIH.
The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the
power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce
valid data on the device data outputs. The device remains enabled for read access until the
command register contents are altered.
See Reading Array Data‚ on page 50 for more information. Refer to the AC Read-Only Operations table for timing specifications and to Figure 11, on page 78 for the timing diagram.
Refer to the DC Characteristics table for the active current specification on reading array data.
Page Mode Read
The device is capable of fast page mode read and is compatible with the page mode Mask
ROM read operation. This mode provides faster read access speed for random locations within
a page. The page size of the device is 8 words/16 bytes. The appropriate page is selected by
the higher address bits A(max)–A3. Address bits A2–A0 in word mode (A2–A-1 in byte mode)
determine the specific word within a page. This is an asynchronous operation; the microprocessor supplies the specific word location.
The random or initial page access is equal to tACC or tCE and subsequent page read accesses
(as long as the locations specified by the microprocessor falls within that page) is equivalent
to tPACC. When CE# is de-asserted and reasserted for a subsequent access, the access time
is tACC or tCE. Fast page mode accesses are obtained by keeping the “read-page addresses”
constant and changing the “intra-read page” addresses.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device
and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word or
byte, instead of four. The “Word Program Command Sequence” section has details on programming data to the device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 on
page 16, Table 4 on page 34, and Table 5 on page 37 indicate the address space that each
sector occupies.
Refer to the DC Characteristics table for the active current specification for the write mode.
The AC Characteristics section contains timing specification tables and timing diagrams for
write operations.
Write Buffer
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one
programming operation. This results in faster effective programming time than the standard
programming algorithms. See Write Buffer‚ on page 14 for more information.
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This is one of
two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster
manufacturing throughput at the factory.
14
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sector groups, and uses the higher
voltage on the pin to reduce the time required for program operations. The system would use
a two-cycle program command sequence as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC
pin must not be at VHH for operations other than accelerated programming, or device damage
may result. WP# has an internal pullup; when unconnected, WP# is at VIH.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect
mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode.
Refer to the Autoselect Mode‚ on page 37 and Autoselect Command Sequence‚ on page 51,
for more information.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby
mode. In this mode, current consumption is greatly reduced, and the outputs are placed in
the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at
VIO ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET#
are held at VIH, but not within VIO ± 0.3 V, the device is in the standby mode, but the standby
current is greater. The device requires standard access time (tCE) for read access when the
device is in either of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current
until the operation is completed.
Refer to DC Characteristics‚ on page 74 for the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep
mode is independent of the CE#, WE#, and OE# control signals. Standard address access
timings provide new data when addresses are changed. While in sleep mode, output data is
latched and always available to the system. Refer to DC Characteristics‚ on page 74 for the
automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data.
When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write
commands for the duration of the RESET# pulse. The device also resets the internal state
machine to reading array data. The operation that was interrupted should be reinitiated once
the device is ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V,
the device draws CMOS standby current (ICC5). If RESET# is held at VIL but not within
VSS±0.3 V, the standby current is greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also
reset the Flash memory, enabling the system to read the boot-up firmware from the Flash
memory.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 13, on page 79
for the timing diagram.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
15
D a t a
S h e e t
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed
in the high impedance state.
Table 2.
Sector
16
Sector Address Table–S29GL512N (Sheet 1 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
0
0
0
128/64
0000000–001FFFF
0000000–000FFFF
SA1
0
0
0
0
0
0
0
0
1
128/64
0020000–003FFFF
0010000–001FFFF
SA2
0
0
0
0
0
0
0
1
0
128/64
0040000–005FFFF
0020000–002FFFF
SA3
0
0
0
0
0
0
0
1
1
128/64
0060000–007FFFF
0030000–003FFFF
SA4
0
0
0
0
0
0
1
0
0
128/64
0080000–009FFFF
0040000–004FFFF
SA5
0
0
0
0
0
0
1
0
1
128/64
00A0000–00BFFFF
0050000–005FFFF
SA6
0
0
0
0
0
0
1
1
0
128/64
00C0000–00DFFFF
0060000–006FFFF
SA7
0
0
0
0
0
0
1
1
1
128/64
00E0000–00FFFFF
0070000–007FFFF
SA8
0
0
0
0
0
1
0
0
0
128/64
0100000–011FFFF
0080000–008FFFF
SA9
0
0
0
0
0
1
0
0
1
128/64
0120000–013FFFF
0090000–009FFFF
SA10
0
0
0
0
0
1
0
1
0
128/64
0140000–015FFFF
00A0000–00AFFFF
SA11
0
0
0
0
0
1
0
1
1
128/64
0160000–017FFFF
00B0000–00BFFFF
SA12
0
0
0
0
0
1
1
0
0
128/64
0180000–019FFFF
00C0000–00CFFFF
SA13
0
0
0
0
0
1
1
0
1
128/64
01A0000–01BFFFF
00D0000–00DFFFF
SA14
0
0
0
0
0
1
1
1
0
128/64
01C0000–01DFFFF
00E0000–00EFFFF
SA15
0
0
0
0
0
1
1
1
1
128/64
01E0000–01FFFFF
00F0000–00FFFFF
SA16
0
0
0
0
1
0
0
0
0
128/64
0200000–021FFFF
0100000–010FFFF
SA17
0
0
0
0
1
0
0
0
1
128/64
0220000–023FFFF
0110000–011FFFF
SA18
0
0
0
0
1
0
0
1
0
128/64
0240000–025FFFF
0120000–012FFFF
SA19
0
0
0
0
1
0
0
1
1
128/64
0260000–027FFFF
0130000–013FFFF
SA20
0
0
0
0
1
0
1
0
0
128/64
0280000–029FFFF
0140000–014FFFF
SA21
0
0
0
0
1
0
1
0
1
128/64
02A0000–02BFFFF
0150000–015FFFF
SA22
0
0
0
0
1
0
1
1
0
128/64
02C0000–02DFFFF
0160000–016FFFF
SA23
0
0
0
0
1
0
1
1
1
128/64
02E0000–02FFFFF
0170000–017FFFF
SA24
0
0
0
0
1
1
0
0
0
128/64
0300000–031FFFF
0180000–018FFFF
SA25
0
0
0
0
1
1
0
0
1
128/64
0320000–033FFFF
0190000–019FFFF
SA26
0
0
0
0
1
1
0
1
0
128/64
0340000–035FFFF
01A0000–01AFFFF
SA27
0
0
0
0
1
1
0
1
1
128/64
0360000–037FFFF
01B0000–01BFFFF
SA28
0
0
0
0
1
1
1
0
0
128/64
0380000–039FFFF
01C0000–01CFFFF
SA29
0
0
0
0
1
1
1
0
1
128/64
03A0000–03BFFFF
01D0000–01DFFFF
SA30
0
0
0
0
1
1
1
1
0
128/64
03C0000–03DFFFF
01E0000–01EFFFF
SA31
0
0
0
0
1
1
1
1
1
128/64
03E0000–0EFFFFF
01F0000–01FFFFF
SA32
0
0
0
1
0
0
0
0
0
128/64
0400000–041FFFF
0200000–020FFFF
SA33
0
0
0
1
0
0
0
0
1
128/64
0420000–043FFFF
0210000–021FFFF
SA34
0
0
0
1
0
0
0
1
0
128/64
0440000–045FFFF
0220000–022FFFF
SA35
0
0
0
1
0
0
0
1
1
128/64
0460000–047FFFF
0230000–023FFFF
SA36
0
0
0
1
0
0
1
0
0
128/64
0480000–049FFFF
0240000–024FFFF
SA37
0
0
0
1
0
0
1
0
1
128/64
04A0000–04BFFFF
0250000–025FFFF
SA38
0
0
0
1
0
0
1
1
0
128/64
04C0000–04DFFFF
0260000–026FFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 2.
Sector
S h e e t
Sector Address Table–S29GL512N (Sheet 2 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA39
0
0
0
1
0
0
1
1
1
128/64
04E0000–04FFFFF
0270000–027FFFF
SA40
0
0
0
1
0
1
0
0
0
128/64
0500000–051FFFF
0280000–028FFFF
SA41
0
0
0
1
0
1
0
0
1
128/64
0520000–053FFFF
0290000–029FFFF
SA42
0
0
0
1
0
1
0
1
0
128/64
0540000–055FFFF
02A0000–02AFFFF
SA43
0
0
0
1
0
1
0
1
1
128/64
0560000–057FFFF
02B0000–02BFFFF
SA44
0
0
0
1
0
1
1
0
0
128/64
0580000–059FFFF
02C0000–02CFFFF
SA45
0
0
0
1
0
1
1
0
1
128/64
05A0000–05BFFFF
02D0000–02DFFFF
SA46
0
0
0
1
0
1
1
1
0
128/64
05C0000–05DFFFF
02E0000–02EFFFF
SA47
0
0
0
1
0
1
1
1
1
128/64
05E0000–05FFFFF
02F0000–02FFFFF
SA48
0
0
0
1
1
0
0
0
0
128/64
0600000–061FFFF
0300000–030FFFF
SA49
0
0
0
1
1
0
0
0
1
128/64
0620000–063FFFF
0310000–031FFFF
SA50
0
0
0
1
1
0
0
1
0
128/64
0640000–065FFFF
0320000–032FFFF
SA51
0
0
0
1
1
0
0
1
1
128/64
0660000–067FFFF
0330000–033FFFF
SA52
0
0
0
1
1
0
1
0
0
128/64
0680000–069FFFF
0340000–034FFFF
SA53
0
0
0
1
1
0
1
0
1
128/64
06A0000–06BFFFF
0350000–035FFFF
SA54
0
0
0
1
1
0
1
1
0
128/64
06C0000–06DFFFF
0360000–036FFFF
SA55
0
0
0
1
1
0
1
1
1
128/64
06E0000–06FFFFF
0370000–037FFFF
SA56
0
0
0
1
1
1
0
0
0
128/64
0700000–071FFFF
0380000–038FFFF
SA57
0
0
0
1
1
1
0
0
1
128/64
0720000–073FFFF
0390000–039FFFF
SA58
0
0
0
1
1
1
0
1
0
128/64
0740000–075FFFF
03A0000–03AFFFF
SA59
0
0
0
1
1
1
0
1
1
128/64
0760000–077FFFF
03B0000–03BFFFF
SA60
0
0
0
1
1
1
1
0
0
128/64
0780000–079FFFF
03C0000–03CFFFF
SA61
0
0
0
1
1
1
1
0
1
128/64
07A0000–07BFFFF
03D0000–03DFFFF
SA62
0
0
0
1
1
1
1
1
0
128/64
07C0000–07DFFFF
03E0000–03EFFFF
SA63
0
0
0
1
1
1
1
1
1
128/64
07E0000–07FFFFF
03F0000–03FFFFF
SA64
0
0
1
0
0
0
0
0
0
128/64
0800000–081FFFF
0400000–040FFFF
SA65
0
0
1
0
0
0
0
0
1
128/64
0820000–083FFFF
0410000–041FFFF
SA66
0
0
1
0
0
0
0
1
0
128/64
0840000–085FFFF
0420000–042FFFF
SA67
0
0
1
0
0
0
0
1
1
128/64
0860000–087FFFF
0430000–043FFFF
SA68
0
0
1
0
0
0
1
0
0
128/64
0880000–089FFFF
0440000–044FFFF
SA69
0
0
1
0
0
0
1
0
1
128/64
08A0000–08BFFFF
0450000–045FFFF
SA70
0
0
1
0
0
0
1
1
0
128/64
08C0000–08DFFFF
0460000–046FFFF
SA71
0
0
1
0
0
0
1
1
1
128/64
08E0000–08FFFFF
0470000–047FFFF
SA72
0
0
1
0
0
1
0
0
0
128/64
0900000–091FFFF
0480000–048FFFF
SA73
0
0
1
0
0
1
0
0
1
128/64
0920000–093FFFF
0490000–049FFFF
SA74
0
0
1
0
0
1
0
1
0
128/64
0940000–095FFFF
04A0000–04AFFFF
SA75
0
0
1
0
0
1
0
1
1
128/64
0960000–097FFFF
04B0000–04BFFFF
SA76
0
0
1
0
0
1
1
0
0
128/64
0980000–099FFFF
04C0000–04CFFFF
SA77
0
0
1
0
0
1
1
0
1
128/64
09A0000–09BFFFF
04D0000–04DFFFF
SA78
0
0
1
0
0
1
1
1
0
128/64
09C0000–09DFFFF
04E0000–04EFFFF
SA79
0
0
1
0
0
1
1
1
1
128/64
09E0000–09FFFFF
04F0000–04FFFFF
SA80
0
0
1
0
1
0
0
0
0
128/64
0A00000–0A1FFFF
0500000–050FFFF
SA81
0
0
1
0
1
0
0
0
1
128/64
0A20000–0A3FFFF
0510000–051FFFF
SA82
0
0
1
0
1
0
0
1
0
128/64
0A40000–0A5FFFF
0520000–052FFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
17
D a t a
Table 2.
Sector
18
S h e e t
Sector Address Table–S29GL512N (Sheet 3 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
0A60000–0A7FFFF
0530000–053FFFF
SA83
0
0
1
0
1
0
0
1
1
128/64
SA84
0
0
1
0
1
0
1
0
0
128/64
0A80000–0A9FFFF
0540000–054FFFF
SA85
0
0
1
0
1
0
1
0
1
128/64
0AA0000–0ABFFFF
0550000–055FFFF
SA86
0
0
1
0
1
0
1
1
0
128/64
0AC0000–0ADFFFF
0560000–056FFFF
SA87
0
0
1
0
1
0
1
1
1
128/64
0AE0000–0AFFFFF
0570000–057FFFF
SA88
0
0
1
0
1
1
0
0
0
128/64
0B00000–0B1FFFF
0580000–058FFFF
SA89
0
0
1
0
1
1
0
0
1
128/64
0B20000–0B3FFFF
0590000–059FFFF
SA90
0
0
1
0
1
1
0
1
0
128/64
0B40000–0B5FFFF
05A0000–05AFFFF
SA91
0
0
1
0
1
1
0
1
1
128/64
0B60000–0B7FFFF
05B0000–05BFFFF
SA92
0
0
1
0
1
1
1
0
0
128/64
0B80000–0B9FFFF
05C0000–05CFFFF
SA93
0
0
1
0
1
1
1
0
1
128/64
0BA0000–0BBFFFF
05D0000–05DFFFF
SA94
0
0
1
0
1
1
1
1
0
128/64
0BC0000–0BDFFFF
05E0000–05EFFFF
SA95
0
0
1
0
1
1
1
1
1
128/64
0BE0000–0BFFFFF
05F0000–05FFFFF
SA96
0
0
1
1
0
0
0
0
0
128/64
0C00000–0C1FFFF
0600000–060FFFF
SA97
0
0
1
1
0
0
0
0
1
128/64
0C20000–0C3FFFF
0610000–061FFFF
SA98
0
0
1
1
0
0
0
1
0
128/64
0C40000–0C5FFFF
0620000–062FFFF
SA99
0
0
1
1
0
0
0
1
1
128/64
0C60000–0C7FFFF
0630000–063FFFF
SA100
0
0
1
1
0
0
1
0
0
128/64
0C80000–0C9FFFF
0640000–064FFFF
SA101
0
0
1
1
0
0
1
0
1
128/64
0CA0000–0CBFFFF
0650000–065FFFF
SA102
0
0
1
1
0
0
1
1
0
128/64
0CC0000–0CDFFFF
0660000–066FFFF
SA103
0
0
1
1
0
0
1
1
1
128/64
0CE0000–0CFFFFF
0670000–067FFFF
SA104
0
0
1
1
0
1
0
0
0
128/64
0D00000–0D1FFFF
0680000–068FFFF
SA105
0
0
1
1
0
1
0
0
1
128/64
0D20000–0D3FFFF
0690000–069FFFF
SA106
0
0
1
1
0
1
0
1
0
128/64
0D40000–0D5FFFF
06A0000–06AFFFF
SA107
0
0
1
1
0
1
0
1
1
128/64
0D60000–0D7FFFF
06B0000–06BFFFF
SA108
0
0
1
1
0
1
1
0
0
128/64
0D80000–0D9FFFF
06C0000–06CFFFF
SA109
0
0
1
1
0
1
1
0
1
128/64
0DA0000–0DBFFFF
06D0000–06DFFFF
SA110
0
0
1
1
0
1
1
1
0
128/64
0DC0000–0DDFFFF
06E0000–06EFFFF
SA111
0
0
1
1
0
1
1
1
1
128/64
0DE0000–0DFFFFF
06F0000–06FFFFF
SA112
0
0
1
1
1
0
0
0
0
128/64
0E00000–0E1FFFF
0700000–070FFFF
SA113
0
0
1
1
1
0
0
0
1
128/64
0E20000–0E3FFFF
0710000–071FFFF
SA114
0
0
1
1
1
0
0
1
0
128/64
0E40000–0E5FFFF
0720000–072FFFF
SA115
0
0
1
1
1
0
0
1
1
128/64
0E60000–0E7FFFF
0730000–073FFFF
SA116
0
0
1
1
1
0
1
0
0
128/64
0E80000–0E9FFFF
0740000–074FFFF
SA117
0
0
1
1
1
0
1
0
1
128/64
0EA0000–0EBFFFF
0750000–075FFFF
SA118
0
0
1
1
1
0
1
1
0
128/64
0EC0000–0EDFFFF
0760000–076FFFF
SA119
0
0
1
1
1
0
1
1
1
128/64
0EE0000–0EFFFFF
0770000–077FFFF
SA120
0
0
1
1
1
1
0
0
0
128/64
0F00000–0F1FFFF
0780000–078FFFF
SA121
0
0
1
1
1
1
0
0
1
128/64
0F20000–0F3FFFF
0790000–079FFFF
SA122
0
0
1
1
1
1
0
1
0
128/64
0F40000–0F5FFFF
07A0000–07AFFFF
SA123
0
0
1
1
1
1
0
1
1
128/64
0F60000–0F7FFFF
07B0000–07BFFFF
SA124
0
0
1
1
1
1
1
0
0
128/64
0F80000–0F9FFFF
07C0000–07CFFFF
SA125
0
0
1
1
1
1
1
0
1
128/64
0FA0000–0FBFFFF
07D0000–07DFFFF
SA126
0
0
1
1
1
1
1
1
0
128/64
0FC0000–0FDFFFF
07E0000–07EFFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 2.
Sector
S h e e t
Sector Address Table–S29GL512N (Sheet 4 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA127
0
0
1
1
1
1
1
1
1
128/64
0FE0000–0FFFFFF
07F0000–07FFFFF
SA128
0
1
0
0
0
0
0
0
0
128/64
1000000–101FFFF
0800000–080FFFF
SA129
0
1
0
0
0
0
0
0
1
128/64
1020000–103FFFF
0810000–081FFFF
SA130
0
1
0
0
0
0
0
1
0
128/64
1040000–105FFFF
0820000–082FFFF
SA131
0
1
0
0
0
0
0
1
1
128/64
1060000–017FFFF
0830000–083FFFF
SA132
0
1
0
0
0
0
1
0
0
128/64
1080000–109FFFF
0840000–084FFFF
SA133
0
1
0
0
0
0
1
0
1
128/64
10A0000–10BFFFF
0850000–085FFFF
SA134
0
1
0
0
0
0
1
1
0
128/64
10C0000–10DFFFF
0860000–086FFFF
SA135
0
1
0
0
0
0
1
1
1
128/64
10E0000–10FFFFF
0870000–087FFFF
SA136
0
1
0
0
0
1
0
0
0
128/64
1100000–111FFFF
0880000–088FFFF
SA137
0
1
0
0
0
1
0
0
1
128/64
1120000–113FFFF
0890000–089FFFF
SA138
0
1
0
0
0
1
0
1
0
128/64
1140000–115FFFF
08A0000–08AFFFF
SA139
0
1
0
0
0
1
0
1
1
128/64
1160000–117FFFF
08B0000–08BFFFF
SA140
0
1
0
0
0
1
1
0
0
128/64
1180000–119FFFF
08C0000–08CFFFF
SA141
0
1
0
0
0
1
1
0
1
128/64
11A0000–11BFFFF
08D0000–08DFFFF
SA142
0
1
0
0
0
1
1
1
0
128/64
11C0000–11DFFFF
08E0000–08EFFFF
SA143
0
1
0
0
0
1
1
1
1
128/64
11E0000–11FFFFF
08F0000–08FFFFF
SA144
0
1
0
0
1
0
0
0
0
128/64
1200000–121FFFF
0900000–090FFFF
SA145
0
1
0
0
1
0
0
0
1
128/64
1220000–123FFFF
0910000–091FFFF
SA146
0
1
0
0
1
0
0
1
0
128/64
1240000–125FFFF
0920000–092FFFF
SA147
0
1
0
0
1
0
0
1
1
128/64
1260000–127FFFF
0930000–093FFFF
SA148
0
1
0
0
1
0
1
0
0
128/64
1280000–129FFFF
0940000–094FFFF
SA149
0
1
0
0
1
0
1
0
1
128/64
12A0000–12BFFFF
0950000–095FFFF
SA150
0
1
0
0
1
0
1
1
0
128/64
12C0000–12DFFFF
0960000–096FFFF
SA151
0
1
0
0
1
0
1
1
1
128/64
12E0000–12FFFFF
0970000–097FFFF
SA152
0
1
0
0
1
1
0
0
0
128/64
1300000–131FFFF
0980000–098FFFF
SA153
0
1
0
0
1
1
0
0
1
128/64
1320000–133FFFF
0990000–099FFFF
SA154
0
1
0
0
1
1
0
1
0
128/64
1340000–135FFFF
09A0000–09AFFFF
SA155
0
1
0
0
1
1
0
1
1
128/64
1360000–137FFFF
09B0000–09BFFFF
SA156
0
1
0
0
1
1
1
0
0
128/64
1380000–139FFFF
09C0000–09CFFFF
SA157
0
1
0
0
1
1
1
0
1
128/64
13A0000–13BFFFF
09D0000–09DFFFF
SA158
0
1
0
0
1
1
1
1
0
128/64
13C0000–13DFFFF
09E0000–09EFFFF
SA159
0
1
0
0
1
1
1
1
1
128/64
13E0000–13FFFFF
09F0000–09FFFFF
SA160
0
1
0
1
0
0
0
0
0
128/64
1400000–141FFFF
0A00000–0A0FFFF
SA161
0
1
0
1
0
0
0
0
1
128/64
1420000–143FFFF
0A10000–0A1FFFF
SA162
0
1
0
1
0
0
0
1
0
128/64
1440000–145FFFF
0A20000–0A2FFFF
SA163
0
1
0
1
0
0
0
1
1
128/64
1460000–147FFFF
0A30000–0A3FFFF
SA164
0
1
0
1
0
0
1
0
0
128/64
1480000–149FFFF
0A40000–0A4FFFF
SA165
0
1
0
1
0
0
1
0
1
128/64
14A0000–14BFFFF
0A50000–0A5FFFF
SA166
0
1
0
1
0
0
1
1
0
128/64
14C0000–14DFFFF
0A60000–0A6FFFF
SA167
0
1
0
1
0
0
1
1
1
128/64
14E0000–14FFFFF
0A70000–0A7FFFF
SA168
0
1
0
1
0
1
0
0
0
128/64
1500000–151FFFF
0A80000–0A8FFFF
SA169
0
1
0
1
0
1
0
0
1
128/64
1520000–153FFFF
0A90000–0A9FFFF
SA170
0
1
0
1
0
1
0
1
0
128/64
1540000–155FFFF
0AA0000–0AAFFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
19
D a t a
Table 2.
Sector
20
S h e e t
Sector Address Table–S29GL512N (Sheet 5 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
1560000–157FFFF
0AB0000–0ABFFFF
SA171
0
1
0
1
0
1
0
1
1
128/64
SA172
0
1
0
1
0
1
1
0
0
128/64
1580000–159FFFF
0AC0000–0ACFFFF
SA173
0
1
0
1
0
1
1
0
1
128/64
15A0000–15BFFFF
0AD0000–0ADFFFF
SA174
0
1
0
1
0
1
1
1
0
128/64
15C0000–15DFFFF
0AE0000–0AEFFFF
SA175
0
1
0
1
0
1
1
1
1
128/64
15E0000–15FFFFF
0AF0000–0AFFFFF
SA176
0
1
0
1
1
0
0
0
0
128/64
160000–161FFFF
0B00000–0B0FFFF
SA177
0
1
0
1
1
0
0
0
1
128/64
1620000–163FFFF
0B10000–0B1FFFF
SA178
0
1
0
1
1
0
0
1
0
128/64
1640000–165FFFF
0B20000–0B2FFFF
SA179
0
1
0
1
1
0
0
1
1
128/64
1660000–167FFFF
0B30000–0B3FFFF
SA180
0
1
0
1
1
0
1
0
0
128/64
1680000–169FFFF
0B40000–0B4FFFF
SA181
0
1
0
1
1
0
1
0
1
128/64
16A0000–16BFFFF
0B50000–0B5FFFF
SA182
0
1
0
1
1
0
1
1
0
128/64
16C0000–16DFFFF
0B60000–0B6FFFF
SA183
0
1
0
1
1
0
1
1
1
128/64
16E0000–16FFFFF
0B70000–0B7FFFF
SA184
0
1
0
1
1
1
0
0
0
128/64
1700000–171FFFF
0B80000–0B8FFFF
SA185
0
1
0
1
1
1
0
0
1
128/64
1720000–173FFFF
0B90000–0B9FFFF
SA186
0
1
0
1
1
1
0
1
0
128/64
1740000–175FFFF
0BA0000–0BAFFFF
SA187
0
1
0
1
1
1
0
1
1
128/64
1760000–177FFFF
0BB0000–0BBFFFF
SA188
0
1
0
1
1
1
1
0
0
128/64
1780000–179FFFF
0BC0000–0BCFFFF
SA189
0
1
0
1
1
1
1
0
1
128/64
17A0000–17BFFFF
0BD0000–0BDFFFF
SA190
0
1
0
1
1
1
1
1
0
128/64
17C0000–17DFFFF
0BE0000–0BEFFFF
SA191
0
1
0
1
1
1
1
1
1
128/64
17E0000–17FFFFF
0BF0000–0BFFFFF
SA192
0
1
1
0
0
0
0
0
0
128/64
1800000–181FFFF
0C00000–0C0FFFF
SA193
0
1
1
0
0
0
0
0
1
128/64
1820000–183FFFF
0C10000–0C1FFFF
SA194
0
1
1
0
0
0
0
1
0
128/64
1840000–185FFFF
0C20000–0C2FFFF
SA195
0
1
1
0
0
0
0
1
1
128/64
1860000–187FFFF
0C30000–0C3FFFF
SA196
0
1
1
0
0
0
1
0
0
128/64
1880000–189FFFF
0C40000–0C4FFFF
SA197
0
1
1
0
0
0
1
0
1
128/64
18A0000–18BFFFF
0C50000–0C5FFFF
SA198
0
1
1
0
0
0
1
1
0
128/64
18C0000–18DFFFF
0C60000–0C6FFFF
SA199
0
1
1
0
0
0
1
1
1
128/64
18E0000–18FFFFF
0C70000–0C7FFFF
SA200
0
1
1
0
0
1
0
0
0
128/64
1900000–191FFFF
0C80000–0C8FFFF
SA201
0
1
1
0
0
1
0
0
1
128/64
1920000–193FFFF
0C90000–0C9FFFF
SA202
0
1
1
0
0
1
0
1
0
128/64
1940000–195FFFF
0CA0000–0CAFFFF
SA203
0
1
1
0
0
1
0
1
1
128/64
1960000–197FFFF
0CB0000–0CBFFFF
SA204
0
1
1
0
0
1
1
0
0
128/64
1980000–199FFFF
0CC0000–0CCFFFF
SA205
0
1
1
0
0
1
1
0
1
128/64
19A0000–19BFFFF
0CD0000–0CDFFFF
SA206
0
1
1
0
0
1
1
1
0
128/64
19C0000–19DFFFF
0CE0000–0CEFFFF
SA207
0
1
1
0
0
1
1
1
1
128/64
19E0000–19FFFFF
0CF0000–0CFFFFF
SA208
0
1
1
0
1
0
0
0
0
128/64
1A00000–1A1FFFF
0D00000–0D0FFFF
SA209
0
1
1
0
1
0
0
0
1
128/64
1A20000–1A3FFFF
0D10000–0D1FFFF
SA210
0
1
1
0
1
0
0
1
0
128/64
1A40000–1A5FFFF
0D20000–0D2FFFF
SA211
0
1
1
0
1
0
0
1
1
128/64
1A60000–1A7FFFF
0D30000–0D3FFFF
SA212
0
1
1
0
1
0
1
0
0
128/64
1A80000–1A9FFFF
0D40000–0D4FFFF
SA213
0
1
1
0
1
0
1
0
1
128/64
1AA0000–1ABFFFF
0D50000–0D5FFFF
SA214
0
1
1
0
1
0
1
1
0
128/64
1AC0000–1ADFFFF
0D60000–0D6FFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 2.
Sector
S h e e t
Sector Address Table–S29GL512N (Sheet 6 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA215
0
1
1
0
1
0
1
1
1
128/64
1AE0000–1AFFFFF
0D70000–0D7FFFF
SA216
0
1
1
0
1
1
0
0
0
128/64
1B00000–1B1FFFF
0D80000–0D8FFFF
SA217
0
1
1
0
1
1
0
0
1
128/64
1B20000–1B3FFFF
0D90000–0D9FFFF
SA218
0
1
1
0
1
1
0
1
0
128/64
1B40000–1B5FFFF
0DA0000–0DAFFFF
SA219
0
1
1
0
1
1
0
1
1
128/64
1B60000–1B7FFFF
0DB0000–0DBFFFF
SA220
0
1
1
0
1
1
1
0
0
128/64
1B80000–1B9FFFF
0DC0000–0DCFFFF
SA221
0
1
1
0
1
1
1
0
1
128/64
1BA0000–1BBFFFF
0DD0000–0DDFFFF
SA222
0
1
1
0
1
1
1
1
0
128/64
1BC0000–1BDFFFF
0DE0000–0DEFFFF
SA223
0
1
1
0
1
1
1
1
1
128/64
1BE0000–1BFFFFF
0DF0000–0DFFFFF
SA224
0
1
1
1
0
0
0
0
0
128/64
1C00000–1C1FFFF
0E00000–0E0FFFF
SA225
0
1
1
1
0
0
0
0
1
128/64
1C20000–1C3FFFF
0E10000–0E1FFFF
SA226
0
1
1
1
0
0
0
1
0
128/64
1C40000–1C5FFFF
0E20000–0E2FFFF
SA227
0
1
1
1
0
0
0
1
1
128/64
1C60000–1C7FFFF
0E30000–0E3FFFF
SA228
0
1
1
1
0
0
1
0
0
128/64
1C80000–1C9FFFF
0E40000–0E4FFFF
SA229
0
1
1
1
0
0
1
0
1
128/64
1CA0000–1CBFFFF
0E50000–0E5FFFF
SA230
0
1
1
1
0
0
1
1
0
128/64
1CC0000–1CDFFFF
0E60000–0E6FFFF
SA231
0
1
1
1
0
0
1
1
1
128/64
1CE0000–1CFFFFF
0E70000–0E7FFFF
SA232
0
1
1
1
0
1
0
0
0
128/64
1D00000–1D1FFFF
0E80000–0E8FFFF
SA233
0
1
1
1
0
1
0
0
1
128/64
1D20000–1D3FFFF
0E90000–0E9FFFF
SA234
0
1
1
1
0
1
0
1
0
128/64
1D40000–1D5FFFF
0EA0000–0EAFFFF
SA235
0
1
1
1
0
1
0
1
1
128/64
1D60000–1D7FFFF
0EB0000–0EBFFFF
SA236
0
1
1
1
0
1
1
0
0
128/64
1D80000–1D9FFFF
0EC0000–0ECFFFF
SA237
0
1
1
1
0
1
1
0
1
128/64
1DA0000–1DBFFFF
0ED0000–0EDFFFF
SA238
0
1
1
1
0
1
1
1
0
128/64
1DC0000–1DDFFFF
0EE0000–0EEFFFF
SA239
0
1
1
1
0
1
1
1
1
128/64
1DE0000–1DFFFFF
0EF0000–0EFFFFF
SA240
0
1
1
1
1
0
0
0
0
128/64
1E00000–1E1FFFF
0F00000–0F0FFFF
SA241
0
1
1
1
1
0
0
0
1
128/64
1E20000–1E3FFFF
0F10000–0F1FFFF
SA242
0
1
1
1
1
0
0
1
0
128/64
1E40000–1E5FFFF
0F20000–0F2FFFF
SA243
0
1
1
1
1
0
0
1
1
128/64
1E60000–1E7FFFF
0F30000–0F3FFFF
SA244
0
1
1
1
1
0
1
0
0
128/64
1E80000–1E9FFFF
0F40000–0F4FFFF
SA245
0
1
1
1
1
0
1
0
1
128/64
1EA0000–1EBFFFF
0F50000–0F5FFFF
SA246
0
1
1
1
1
0
1
1
0
128/64
1EC0000–1EDFFFF
0F60000–0F6FFFF
SA247
0
1
1
1
1
0
1
1
1
128/64
1EE0000–1EFFFFF
0F70000–0F7FFFF
SA248
0
1
1
1
1
1
0
0
0
128/64
1F00000–1F1FFFF
0F80000–0F8FFFF
SA249
0
1
1
1
1
1
0
0
1
128/64
1F20000–1F3FFFF
0F90000–0F9FFFF
SA250
0
1
1
1
1
1
0
1
0
128/64
1F40000–1F5FFFF
0FA0000–0FAFFFF
SA251
0
1
1
1
1
1
0
1
1
128/64
1F60000–1F7FFFF
0FB0000–0FBFFFF
SA252
0
1
1
1
1
1
1
0
0
128/64
1F80000–1F9FFFF
0FC0000–0FCFFFF
SA253
0
1
1
1
1
1
1
0
1
128/64
1FA0000–1FBFFFF
0FD0000–0FDFFFF
SA254
0
1
1
1
1
1
1
1
0
128/64
1FC0000–1FDFFFF
0FE0000–0FEFFFF
SA255
0
1
1
1
1
1
1
1
1
128/64
1FE0000–1FFFFFF
0FF0000–0FFFFFF
SA256
1
0
0
0
0
0
0
0
0
128/64
2000000–201FFFF
1000000–100FFFF
SA257
1
0
0
0
0
0
0
0
1
128/64
2020000–203FFFF
1010000–101FFFF
SA258
1
0
0
0
0
0
0
1
0
128/64
2040000–205FFFF
1020000–102FFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
21
D a t a
Table 2.
Sector
22
S h e e t
Sector Address Table–S29GL512N (Sheet 7 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
2060000–207FFFF
1030000–103FFFF
SA259
1
0
0
0
0
0
0
1
1
128/64
SA260
1
0
0
0
0
0
1
0
0
128/64
2080000–209FFFF
1040000–104FFFF
SA261
1
0
0
0
0
0
1
0
1
128/64
20A0000–20BFFFF
1050000–105FFFF
SA262
1
0
0
0
0
0
1
1
0
128/64
20C0000–20DFFFF
1060000–106FFFF
SA263
1
0
0
0
0
0
1
1
1
128/64
20E0000–20FFFFF
1070000–107FFFF
SA264
1
0
0
0
0
1
0
0
0
128/64
2100000–211FFFF
1080000–108FFFF
SA265
1
0
0
0
0
1
0
0
1
128/64
2120000–213FFFF
1090000–109FFFF
SA266
1
0
0
0
0
1
0
1
0
128/64
2140000–215FFFF
10A0000–10AFFFF
SA267
1
0
0
0
0
1
0
1
1
128/64
2160000–217FFFF
10B0000–10BFFFF
SA268
1
0
0
0
0
1
1
0
0
128/64
2180000–219FFFF
10C0000–10CFFFF
SA269
1
0
0
0
0
1
1
0
1
128/64
21A0000–21BFFFF
10D0000–10DFFFF
SA270
1
0
0
0
0
1
1
1
0
128/64
21C0000–21DFFFF
10E0000–10EFFFF
SA271
1
0
0
0
0
1
1
1
1
128/64
21E0000–21FFFFF
10F0000–10FFFFF
SA272
1
0
0
0
1
0
0
0
0
128/64
2200000–221FFFF
1100000–110FFFF
SA273
1
0
0
0
1
0
0
0
1
128/64
2220000–223FFFF
1110000–111FFFF
SA274
1
0
0
0
1
0
0
1
0
128/64
2240000–225FFFF
1120000–112FFFF
SA275
1
0
0
0
1
0
0
1
1
128/64
2260000–227FFFF
1130000–113FFFF
SA276
1
0
0
0
1
0
1
0
0
128/64
2280000–229FFFF
1140000–114FFFF
SA277
1
0
0
0
1
0
1
0
1
128/64
22A0000–22BFFFF
1150000–115FFFF
SA278
1
0
0
0
1
0
1
1
0
128/64
22C0000–22DFFFF
1160000–116FFFF
SA279
1
0
0
0
1
0
1
1
1
128/64
22E0000–22FFFFF
1170000–117FFFF
SA280
1
0
0
0
1
1
0
0
0
128/64
2300000–231FFFF
1180000–118FFFF
SA281
1
0
0
0
1
1
0
0
1
128/64
2320000–233FFFF
1190000–119FFFF
SA282
1
0
0
0
1
1
0
1
0
128/64
2340000–235FFFF
11A0000–11AFFFF
SA283
1
0
0
0
1
1
0
1
1
128/64
2360000–237FFFF
11B0000–11BFFFF
SA284
1
0
0
0
1
1
1
0
0
128/64
2380000–239FFFF
11C0000–11CFFFF
SA285
1
0
0
0
1
1
1
0
1
128/64
23A0000–23BFFFF
11D0000–11DFFFF
SA286
1
0
0
0
1
1
1
1
0
128/64
23C0000–23DFFFF
11E0000–11EFFFF
SA287
1
0
0
0
1
1
1
1
1
128/64
23E0000–23FFFFF
11F0000–11FFFFF
SA288
1
0
0
1
0
0
0
0
0
128/64
2400000–241FFFF
1200000–120FFFF
SA289
1
0
0
1
0
0
0
0
1
128/64
2420000–243FFFF
1210000–121FFFF
SA290
1
0
0
1
0
0
0
1
0
128/64
2440000–245FFFF
1220000–122FFFF
SA291
1
0
0
1
0
0
0
1
1
128/64
2460000–247FFFF
1230000–123FFFF
SA292
1
0
0
1
0
0
1
0
0
128/64
2480000–249FFFF
1240000–124FFFF
SA293
1
0
0
1
0
0
1
0
1
128/64
24A0000–24BFFFF
1250000–125FFFF
SA294
1
0
0
1
0
0
1
1
0
128/64
24C0000–24DFFFF
1260000–126FFFF
SA295
1
0
0
1
0
0
1
1
1
128/64
24E0000–24FFFFF
1270000–127FFFF
SA296
1
0
0
1
0
1
0
0
0
128/64
2500000–251FFFF
1280000–128FFFF
SA297
1
0
0
1
0
1
0
0
1
128/64
2520000–253FFFF
1290000–129FFFF
SA298
1
0
0
1
0
1
0
1
0
128/64
2540000–255FFFF
12A0000–12AFFFF
SA299
1
0
0
1
0
1
0
1
1
128/64
2560000–257FFFF
12B0000–12BFFFF
SA300
1
0
0
1
0
1
1
0
0
128/64
2580000–259FFFF
12C0000–12CFFFF
SA301
1
0
0
1
0
1
1
0
1
128/64
25A0000–25BFFFF
12D0000–12DFFFF
SA302
1
0
0
1
0
1
1
1
0
128/64
25C0000–25DFFFF
12E0000–12EFFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 2.
Sector
S h e e t
Sector Address Table–S29GL512N (Sheet 8 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA303
1
0
0
1
0
1
1
1
1
128/64
25E0000–25FFFFF
12F0000–12FFFFF
SA304
1
0
0
1
1
0
0
0
0
128/64
2600000–261FFFF
1300000–130FFFF
SA305
1
0
0
1
1
0
0
0
1
128/64
2620000–263FFFF
1310000–131FFFF
SA306
1
0
0
1
1
0
0
1
0
128/64
2640000–265FFFF
1320000–132FFFF
SA307
1
0
0
1
1
0
0
1
1
128/64
2660000–267FFFF
1330000–133FFFF
SA308
1
0
0
1
1
0
1
0
0
128/64
2680000–269FFFF
1340000–134FFFF
SA309
1
0
0
1
1
0
1
0
1
128/64
26A0000–26BFFFF
1350000–135FFFF
SA310
1
0
0
1
1
0
1
1
0
128/64
26C0000–26DFFFF
1360000–136FFFF
SA311
1
0
0
1
1
0
1
1
1
128/64
26E0000–26FFFFF
1370000–137FFFF
SA312
1
0
0
1
1
1
0
0
0
128/64
2700000–271FFFF
1380000–138FFFF
SA313
1
0
0
1
1
1
0
0
1
128/64
2720000–273FFFF
1390000–139FFFF
SA314
1
0
0
1
1
1
0
1
0
128/64
2740000–275FFFF
13A0000–13AFFFF
SA315
1
0
0
1
1
1
0
1
1
128/64
2760000–277FFFF
13B0000–13BFFFF
SA316
1
0
0
1
1
1
1
0
0
128/64
2780000–279FFFF
13C0000–13CFFFF
SA317
1
0
0
1
1
1
1
0
1
128/64
27A0000–27BFFFF
13D0000–13DFFFF
SA318
1
0
0
1
1
1
1
1
0
128/64
27C0000–27DFFFF
13E0000–13EFFFF
SA319
1
0
0
1
1
1
1
1
1
128/64
27E0000–27FFFFF
13F0000–13FFFFF
SA320
1
0
1
0
0
0
0
0
0
128/64
2800000–281FFFF
1400000–140FFFF
SA321
1
0
1
0
0
0
0
0
1
128/64
2820000–283FFFF
1410000–141FFFF
SA322
1
0
1
0
0
0
0
1
0
128/64
2840000–285FFFF
1420000–142FFFF
SA323
1
0
1
0
0
0
0
1
1
128/64
2860000–287FFFF
1430000–143FFFF
SA324
1
0
1
0
0
0
1
0
0
128/64
2880000–289FFFF
1440000–144FFFF
SA325
1
0
1
0
0
0
1
0
1
128/64
28A0000–28BFFFF
1450000–145FFFF
SA326
1
0
1
0
0
0
1
1
0
128/64
28C0000–28DFFFF
1460000–146FFFF
SA327
1
0
1
0
0
0
1
1
1
128/64
28E0000–28FFFFF
1470000–147FFFF
SA328
1
0
1
0
0
1
0
0
0
128/64
2900000–291FFFF
1480000–148FFFF
SA329
1
0
1
0
0
1
0
0
1
128/64
2920000–293FFFF
1490000–149FFFF
SA330
1
0
1
0
0
1
0
1
0
128/64
2940000–295FFFF
14A0000–14AFFFF
SA331
1
0
1
0
0
1
0
1
1
128/64
2960000–297FFFF
14B0000–14BFFFF
SA332
1
0
1
0
0
1
1
0
0
128/64
2980000–299FFFF
14C0000–14CFFFF
SA333
1
0
1
0
0
1
1
0
1
128/64
29A0000–29BFFFF
14D0000–14DFFFF
SA334
1
0
1
0
0
1
1
1
0
128/64
29C0000–29DFFFF
14E0000–14EFFFF
SA335
1
0
1
0
0
1
1
1
1
128/64
29E0000–29FFFFF
14F0000–14FFFFF
SA336
1
0
1
0
1
0
0
0
0
128/64
2A00000–2A1FFFF
1500000–150FFFF
SA337
1
0
1
0
1
0
0
0
1
128/64
2A20000–2A3FFFF
1510000–151FFFF
SA338
1
0
1
0
1
0
0
1
0
128/64
2A40000–2A5FFFF
1520000–152FFFF
SA339
1
0
1
0
1
0
0
1
1
128/64
2A60000–2A7FFFF
1530000–153FFFF
SA340
1
0
1
0
1
0
1
0
0
128/64
2A80000–2A9FFFF
1540000–154FFFF
SA341
1
0
1
0
1
0
1
0
1
128/64
2AA0000–2ABFFFF
1550000–155FFFF
SA342
1
0
1
0
1
0
1
1
0
128/64
2AC0000–2ADFFFF
1560000–156FFFF
SA343
1
0
1
0
1
0
1
1
1
128/64
2AE00000–2EFFFFF
1570000–157FFFF
SA344
1
0
1
0
1
1
0
0
0
128/64
2B00000–2B1FFFF
1580000–158FFFF
SA345
1
0
1
0
1
1
0
0
1
128/64
2B20000–2B3FFFF
1590000–159FFFF
SA346
1
0
1
0
1
1
0
1
0
128/64
2B40000–2B5FFFF
15A0000–15AFFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
23
D a t a
Table 2.
Sector
24
S h e e t
Sector Address Table–S29GL512N (Sheet 9 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
2B60000–2B7FFFF
15B0000–15BFFFF
SA347
1
0
1
0
1
1
0
1
1
128/64
SA348
1
0
1
0
1
1
1
0
0
128/64
2B80000–2B9FFFF
15C0000–15CFFFF
SA349
1
0
1
0
1
1
1
0
1
128/64
2BA0000–2BBFFFF
15D0000–15DFFFF
SA350
1
0
1
0
1
1
1
1
0
128/64
2BC0000–2DFFFFF
15E0000–15EFFFF
SA351
1
0
1
0
1
1
1
1
1
128/64
2BE0000–2BFFFFF
15F0000–15FFFFF
SA352
1
0
1
1
0
0
0
0
0
128/64
2C00000–2C1FFFF
1600000–160FFFF
SA353
1
0
1
1
0
0
0
0
1
128/64
2C20000–2C3FFFF
1610000–161FFFF
SA354
1
0
1
1
0
0
0
1
0
128/64
2C40000–2C5FFFF
1620000–162FFFF
SA355
1
0
1
1
0
0
0
1
1
128/64
2C60000–2C7FFFF
1630000–163FFFF
SA356
1
0
1
1
0
0
1
0
0
128/64
2C80000–2C9FFFF
1640000–164FFFF
SA357
1
0
1
1
0
0
1
0
1
128/64
2CA0000–2CBFFFF
1650000–165FFFF
SA358
1
0
1
1
0
0
1
1
0
128/64
2CC0000–2CDFFFF
1660000–166FFFF
SA359
1
0
1
1
0
0
1
1
1
128/64
2CE0000–2CFFFFF
1670000–167FFFF
SA360
1
0
1
1
0
1
0
0
0
128/64
2D00000–2D1FFFF
1680000–168FFFF
SA361
1
0
1
1
0
1
0
0
1
128/64
2D20000–2D3FFFF
1690000–169FFFF
SA362
1
0
1
1
0
1
0
1
0
128/64
2D40000–2D5FFFF
16A0000–16AFFFF
SA363
1
0
1
1
0
1
0
1
1
128/64
2D60000–2D7FFFF
16B0000–16BFFFF
SA364
1
0
1
1
0
1
1
0
0
128/64
2D80000–2D9FFFF
16C0000–16CFFFF
SA365
1
0
1
1
0
1
1
0
1
128/64
2DA0000–2DBFFFF
16D0000–16DFFFF
SA366
1
0
1
1
0
1
1
1
0
128/64
2DC0000–2DDFFFF
16E0000–16EFFFF
SA367
1
0
1
1
0
1
1
1
1
128/64
2DE0000–2DFFFFF
16F0000–16FFFFF
SA368
1
0
1
1
1
0
0
0
0
128/64
2E00000–2E1FFFF
1700000–170FFFF
SA369
1
0
1
1
1
0
0
0
1
128/64
2E20000–2E3FFFF
1710000–171FFFF
SA370
1
0
1
1
1
0
0
1
0
128/64
2E40000–2E5FFFF
1720000–172FFFF
SA371
1
0
1
1
1
0
0
1
1
128/64
2E60000–2E7FFFF
1730000–173FFFF
SA372
1
0
1
1
1
0
1
0
0
128/64
2E80000–2E9FFFF
1740000–174FFFF
SA373
1
0
1
1
1
0
1
0
1
128/64
2EA0000–2EBFFFF
1750000–175FFFF
SA374
1
0
1
1
1
0
1
1
0
128/64
2EC0000–2EDFFFF
1760000–176FFFF
SA375
1
0
1
1
1
0
1
1
1
128/64
2EE0000–2EFFFFF
1770000–177FFFF
SA376
1
0
1
1
1
1
0
0
0
128/64
2F00000–2F1FFFF
1780000–178FFFF
SA377
1
0
1
1
1
1
0
0
1
128/64
2F20000–2F3FFFF
1790000–179FFFF
SA378
1
0
1
1
1
1
0
1
0
128/64
2F40000–2F5FFFF
17A0000–17AFFFF
SA379
1
0
1
1
1
1
0
1
1
128/64
2F60000–2F7FFFF
17B0000–17BFFFF
SA380
1
0
1
1
1
1
1
0
0
128/64
2F80000–2F9FFFF
17C0000–17CFFFF
SA381
1
0
1
1
1
1
1
0
1
128/64
2FA0000–2FBFFFF
17D0000–17DFFFF
SA382
1
0
1
1
1
1
1
1
0
128/64
2FC0000–2FDFFFF
17E0000–17EFFFF
SA383
1
0
1
1
1
1
1
1
1
128/64
3FE0000–3FFFFFF
17F0000–17FFFFF
SA384
1
1
0
0
0
0
0
0
0
128/64
3000000–301FFFF
1800000–180FFFF
SA385
1
1
0
0
0
0
0
0
1
128/64
3020000–303FFFF
1810000–181FFFF
SA386
1
1
0
0
0
0
0
1
0
128/64
3040000–305FFFF
1820000–182FFFF
SA387
1
1
0
0
0
0
0
1
1
128/64
3060000–307FFFF
1830000–183FFFF
SA388
1
1
0
0
0
0
1
0
0
128/64
3080000–309FFFF
1840000–184FFFF
SA389
1
1
0
0
0
0
1
0
1
128/64
30A0000–30BFFFF
1850000–185FFFF
SA390
1
1
0
0
0
0
1
1
0
128/64
30C0000–30DFFFF
1860000–186FFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 2.
Sector
S h e e t
Sector Address Table–S29GL512N (Sheet 10 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA391
1
1
0
0
0
0
1
1
1
128/64
30E0000–30FFFFF
1870000–187FFFF
SA392
1
1
0
0
0
1
0
0
0
128/64
3100000–311FFFF
1880000–188FFFF
SA393
1
1
0
0
0
1
0
0
1
128/64
3120000–313FFFF
1890000–189FFFF
SA394
1
1
0
0
0
1
0
1
0
128/64
3140000–315FFFF
18A0000–18AFFFF
SA395
1
1
0
0
0
1
0
1
1
128/64
3160000–317FFFF
18B0000–18BFFFF
SA396
1
1
0
0
0
1
1
0
0
128/64
3180000–319FFFF
18C0000–18CFFFF
SA397
1
1
0
0
0
1
1
0
1
128/64
31A0000–31BFFFF
18D0000–18DFFFF
SA398
1
1
0
0
0
1
1
1
0
128/64
31C0000–31DFFFF
18E0000–18EFFFF
SA399
1
1
0
0
0
1
1
1
1
128/64
31E0000–31FFFFF
18F0000–18FFFFF
SA400
1
1
0
0
1
0
0
0
0
128/64
3200000–321FFFF
1900000–190FFFF
SA401
1
1
0
0
1
0
0
0
1
128/64
3220000–323FFFF
1910000–191FFFF
SA402
1
1
0
0
1
0
0
1
0
128/64
3240000–325FFFF
1920000–192FFFF
SA403
1
1
0
0
1
0
0
1
1
128/64
3260000–327FFFF
1930000–193FFFF
SA404
1
1
0
0
1
0
1
0
0
128/64
3280000–329FFFF
1940000–194FFFF
SA405
1
1
0
0
1
0
1
0
1
128/64
32A0000–32BFFFF
1950000–195FFFF
SA406
1
1
0
0
1
0
1
1
0
128/64
32C0000–32DFFFF
1960000–196FFFF
SA407
1
1
0
0
1
0
1
1
1
128/64
32E0000–32FFFFF
1970000–197FFFF
SA408
1
1
0
0
1
1
0
0
0
128/64
3300000–331FFFF
1980000–198FFFF
SA409
1
1
0
0
1
1
0
0
1
128/64
3320000–333FFFF
1990000–199FFFF
SA410
1
1
0
0
1
1
0
1
0
128/64
3340000–335FFFF
19A0000–19AFFFF
SA411
1
1
0
0
1
1
0
1
1
128/64
3360000–337FFFF
19B0000–19BFFFF
SA412
1
1
0
0
1
1
1
0
0
128/64
3380000–339FFFF
19C0000–19CFFFF
SA413
1
1
0
0
1
1
1
0
1
128/64
33A0000–33BFFFF
19D0000–19DFFFF
SA414
1
1
0
0
1
1
1
1
0
128/64
33C0000–33DFFFF
19E0000–19EFFFF
SA415
1
1
0
0
1
1
1
1
1
128/64
33E0000–33FFFFF
19F0000–19FFFFF
SA416
1
1
0
1
0
0
0
0
0
128/64
3400000–341FFFF
1A00000–1A0FFFF
SA417
1
1
0
1
0
0
0
0
1
128/64
3420000–343FFFF
1A10000–1A1FFFF
SA418
1
1
0
1
0
0
0
1
0
128/64
3440000–345FFFF
1A20000–1A2FFFF
SA419
1
1
0
1
0
0
0
1
1
128/64
3460000–347FFFF
1A30000–1A3FFFF
SA420
1
1
0
1
0
0
1
0
0
128/64
3480000–349FFFF
1A40000–1A4FFFF
SA421
1
1
0
1
0
0
1
0
1
128/64
34A0000–34BFFFF
1A50000–1A5FFFF
SA422
1
1
0
1
0
0
1
1
0
128/64
34C0000–34DFFFF
1A60000–1A6FFFF
SA423
1
1
0
1
0
0
1
1
1
128/64
34E0000–34FFFFF
1A70000–1A7FFFF
SA424
1
1
0
1
0
1
0
0
0
128/64
3500000–351FFFF
1A80000–1A8FFFF
SA425
1
1
0
1
0
1
0
0
1
128/64
3520000–353FFFF
1A90000–1A9FFFF
SA426
1
1
0
1
0
1
0
1
0
128/64
3540000–355FFFF
1AA0000–1AAFFFF
SA427
1
1
0
1
0
1
0
1
1
128/64
3560000–357FFFF
1AB0000–1ABFFFF
SA428
1
1
0
1
0
1
1
0
0
128/64
3580000–359FFFF
1AC0000–1ACFFFF
SA429
1
1
0
1
0
1
1
0
1
128/64
35A0000–35BFFFF
1AD0000–1ADFFFF
SA430
1
1
0
1
0
1
1
1
0
128/64
35C0000–35DFFFF
1AE0000–1AEFFFF
SA431
1
1
0
1
0
1
1
1
1
128/64
35E0000–35FFFFF
1AF0000–1AFFFFF
SA432
1
1
0
1
1
0
0
0
0
128/64
3600000–361FFFF
1B00000–1B0FFFF
SA433
1
1
0
1
1
0
0
0
1
128/64
3620000–363FFFF
1B10000–1B1FFFF
SA434
1
1
0
1
1
0
0
1
0
128/64
3640000–365FFFF
1B20000–1B2FFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
25
D a t a
Table 2.
Sector
26
S h e e t
Sector Address Table–S29GL512N (Sheet 11 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
3660000–367FFFF
1B30000–1B3FFFF
SA435
1
1
0
1
1
0
0
1
1
128/64
SA436
1
1
0
1
1
0
1
0
0
128/64
3680000–369FFFF
1B40000–1B4FFFF
SA437
1
1
0
1
1
0
1
0
1
128/64
36A0000–36BFFFF
1B50000–1B5FFFF
SA438
1
1
0
1
1
0
1
1
0
128/64
36C0000–36DFFFF
1B60000–1B6FFFF
SA439
1
1
0
1
1
0
1
1
1
128/64
36E0000–36FFFFF
1B70000–1B7FFFF
SA440
1
1
0
1
1
1
0
0
0
128/64
3700000–371FFFF
1B80000–1B8FFFF
SA441
1
1
0
1
1
1
0
0
1
128/64
3720000–373FFFF
1B90000–1B9FFFF
SA442
1
1
0
1
1
1
0
1
0
128/64
3740000–375FFFF
1BA0000–1BAFFFF
SA443
1
1
0
1
1
1
0
1
1
128/64
3760000–377FFFF
1BB0000–1BBFFFF
SA444
1
1
0
1
1
1
1
0
0
128/64
3780000–379FFFF
1BC0000–1BCFFFF
SA445
1
1
0
1
1
1
1
0
1
128/64
37A0000–37BFFFF
1BD0000–1BDFFFF
SA446
1
1
0
1
1
1
1
1
0
128/64
37C0000–37DFFFF
1BE0000–1BEFFFF
SA447
1
1
0
1
1
1
1
1
1
128/64
37E0000–37FFFFF
1BF0000–1BFFFFF
SA448
1
1
1
0
0
0
0
0
0
128/64
3800000–381FFFF
1C00000–1C0FFFF
SA449
1
1
1
0
0
0
0
0
1
128/64
3820000–383FFFF
1C10000–1C1FFFF
SA450
1
1
1
0
0
0
0
1
0
128/64
3840000–385FFFF
1C20000–1C2FFFF
SA451
1
1
1
0
0
0
0
1
1
128/64
3860000–387FFFF
1C30000–1C3FFFF
SA452
1
1
1
0
0
0
1
0
0
128/64
3880000–389FFFF
1C40000–1C4FFFF
SA453
1
1
1
0
0
0
1
0
1
128/64
38A0000–38BFFFF
1C50000–1C5FFFF
SA454
1
1
1
0
0
0
1
1
0
128/64
38C0000–38DFFFF
1C60000–1C6FFFF
SA455
1
1
1
0
0
0
1
1
1
128/64
38E0000–38FFFFF
1C70000–1C7FFFF
SA456
1
1
1
0
0
1
0
0
0
128/64
3900000–391FFFF
1C80000–1C8FFFF
SA457
1
1
1
0
0
1
0
0
1
128/64
3920000–393FFFF
1C90000–1C9FFFF
SA458
1
1
1
0
0
1
0
1
0
128/64
3940000–395FFFF
1CA0000–1CAFFFF
SA459
1
1
1
0
0
1
0
1
1
128/64
3960000–397FFFF
1CB0000–1CBFFFF
SA460
1
1
1
0
0
1
1
0
0
128/64
3980000–399FFFF
1CC0000–1CCFFFF
SA461
1
1
1
0
0
1
1
0
1
128/64
39A0000–39BFFFF
1CD0000–1CDFFFF
SA462
1
1
1
0
0
1
1
1
0
128/64
39C0000–39DFFFF
1CE0000–1CEFFFF
SA463
1
1
1
0
0
1
1
1
1
128/64
39E0000–39FFFFF
1CF0000–1CFFFFF
SA464
1
1
1
0
1
0
0
0
0
128/64
3A00000–3A1FFFF
1D00000–1D0FFFF
SA465
1
1
1
0
1
0
0
0
1
128/64
3A20000–3A3FFFF
1D10000–1D1FFFF
SA466
1
1
1
0
1
0
0
1
0
128/64
3A40000–3A5FFFF
1D20000–1D2FFFF
SA467
1
1
1
0
1
0
0
1
1
128/64
3A60000–3A7FFFF
1D30000–1D3FFFF
SA468
1
1
1
0
1
0
1
0
0
128/64
3A80000–3A9FFFF
1D40000–1D4FFFF
SA469
1
1
1
0
1
0
1
0
1
128/64
3AA0000–3ABFFFF
1D50000–1D5FFFF
SA470
1
1
1
0
1
0
1
1
0
128/64
3AC0000–3ADFFFF
1D60000–1D6FFFF
SA471
1
1
1
0
1
0
1
1
1
128/64
3AE0000–3AFFFFF
1D70000–1D7FFFF
SA472
1
1
1
0
1
1
0
0
0
128/64
3B00000–3B1FFFF
1D80000–1D8FFFF
SA473
1
1
1
0
1
1
0
0
1
128/64
3B20000–3B3FFFF
1D90000–1D9FFFF
SA474
1
1
1
0
1
1
0
1
0
128/64
3B40000–3B5FFFF
1DA0000–1DAFFFF
SA475
1
1
1
0
1
1
0
1
1
128/64
3B60000–3B7FFFF
1DB0000–1DBFFFF
SA476
1
1
1
0
1
1
1
0
0
128/64
3B80000–3B9FFFF
1DC0000–1DCFFFF
SA477
1
1
1
0
1
1
1
0
1
128/64
3BA0000–3BBFFFF
1DD0000–1DDFFFF
SA478
1
1
1
0
1
1
1
1
0
128/64
3BC0000–3BDFFFF
1DE0000–1DEFFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 2.
Sector
S h e e t
Sector Address Table–S29GL512N (Sheet 12 of 12)
A24–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA479
1
1
1
0
1
1
1
1
1
128/64
3BE0000–3BFFFFF
1DF0000–1DFFFFF
SA480
1
1
1
1
0
0
0
0
0
128/64
3C00000–3C1FFFF
1E00000–1E0FFFF
SA481
1
1
1
1
0
0
0
0
1
128/64
3C20000–3C3FFFF
1E10000–1E1FFFF
SA482
1
1
1
1
0
0
0
1
0
128/64
3C40000–3C5FFFF
1E20000–1E2FFFF
SA483
1
1
1
1
0
0
0
1
1
128/64
3C60000–3C7FFFF
1E30000–1E3FFFF
SA484
1
1
1
1
0
0
1
0
0
128/64
3C80000–3C9FFFF
1E40000–1E4FFFF
SA485
1
1
1
1
0
0
1
0
1
128/64
3CA0000–3CBFFFF
1E50000–1E5FFFF
SA486
1
1
1
1
0
0
1
1
0
128/64
3CC0000–3CDFFFF
1E60000–1E6FFFF
SA487
1
1
1
1
0
0
1
1
1
128/64
3CE0000–3CFFFFF
1E70000–1E7FFFF
SA488
1
1
1
1
0
1
0
0
0
128/64
3D00000–3D1FFFFF
1E80000–1E8FFFF
SA489
1
1
1
1
0
1
0
0
1
128/64
3D20000–3D3FFFF
1E90000–1E9FFFF
SA490
1
1
1
1
0
1
0
1
0
128/64
3D40000–3D5FFFF
1EA0000–1EAFFFF
SA491
1
1
1
1
0
1
0
1
1
128/64
3D60000–3D7FFFF
1EB0000–1EBFFFF
SA492
1
1
1
1
0
1
1
0
0
128/64
3D80000–3D9FFFF
1EC0000–1ECFFFF
SA493
1
1
1
1
0
1
1
0
1
128/64
3DA0000–3DBFFFF
1ED0000–1EDFFFF
SA494
1
1
1
1
0
1
1
1
0
128/64
3DC0000–3DDFFFF
1EE0000–1EEFFFF
SA495
1
1
1
1
0
1
1
1
1
128/64
3DE0000–3DFFFFF
1EF0000–1EFFFFF
SA496
1
1
1
1
1
0
0
0
0
128/64
3E00000–3E1FFFF
1F00000–1F0FFFF
SA497
1
1
1
1
1
0
0
0
1
128/64
3E20000–3E3FFFF
1F10000–1F1FFFF
SA498
1
1
1
1
1
0
0
1
0
128/64
3E40000–3E5FFFF
1F20000–1F2FFFF
SA499
1
1
1
1
1
0
0
1
1
128/64
3E60000–3E7FFFF
1F30000–1F3FFFF
SA500
1
1
1
1
1
0
1
0
0
128/64
3E80000–3E9FFFF
1F40000–1F4FFFF
SA501
1
1
1
1
1
0
1
0
1
128/64
3EA0000–3EBFFFF
1F50000–1F5FFFF
SA502
1
1
1
1
1
0
1
1
0
128/64
3EC00000–3EDFFFF
1F60000–1F6FFFF
SA503
1
1
1
1
1
0
1
1
1
128/64
3EE0000–3EFFFFF
1F70000–1F7FFFF
SA504
1
1
1
1
1
1
0
0
0
128/64
3F00000–3F1FFFF
1F80000–1F8FFFF
SA505
1
1
1
1
1
1
0
0
1
128/64
3F20000–3F3FFFF
1F90000–1F9FFFF
SA506
1
1
1
1
1
1
0
1
0
128/64
3F40000–3F5FFFF
1FA0000–1FAFFFF
SA507
1
1
1
1
1
1
0
1
1
128/64
3F60000–3F7FFFF
1FB0000–1FBFFFF
SA508
1
1
1
1
1
1
1
0
0
128/64
3F80000–3F9FFFF
1FC0000–1FCFFFF
SA509
1
1
1
1
1
1
1
0
1
128/64
3FA0000–3FBFFFF
1FD0000–1FDFFFF
SA510
1
1
1
1
1
1
1
1
0
128/64
3FC0000–3FDFFFF
1FE0000–1FEFFFF
SA511
1
1
1
1
1
1
1
1
1
128/64
3FE0000–3FFFFFF
1FF0000–1FFFFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
27
D a t a
Table 3.
Sector
28
S h e e t
Sector Address Table–S29GL256N (Sheet 1 of 6)
Sector Size
(Kbytes/Kwords)
A23–A16
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
0
0
128/64
0000000–001FFFF
0000000–000FFFF
SA1
0
0
0
0
0
0
0
1
128/64
0020000–003FFFF
0010000–001FFFF
SA2
0
0
0
0
0
0
1
0
128/64
0040000–005FFFF
0020000–002FFFF
SA3
0
0
0
0
0
0
1
1
128/64
0060000–007FFFF
0030000–003FFFF
SA4
0
0
0
0
0
1
0
0
128/64
0080000–009FFFF
0040000–004FFFF
SA5
0
0
0
0
0
1
0
1
128/64
00A0000–00BFFFF
0050000–005FFFF
SA6
0
0
0
0
0
1
1
0
128/64
00C0000–00DFFFF
0060000–006FFFF
SA7
0
0
0
0
0
1
1
1
128/64
00E0000–00FFFFF
0070000–007FFFF
SA8
0
0
0
0
1
0
0
0
128/64
0100000–011FFFF
0080000–008FFFF
SA9
0
0
0
0
1
0
0
1
128/64
0120000–013FFFF
0090000–009FFFF
SA10
0
0
0
0
1
0
1
0
128/64
0140000–015FFFF
00A0000–00AFFFF
SA11
0
0
0
0
1
0
1
1
128/64
0160000–017FFFF
00B0000–00BFFFF
SA12
0
0
0
0
1
1
0
0
128/64
0180000–019FFFF
00C0000–00CFFFF
SA13
0
0
0
0
1
1
0
1
128/64
01A0000–01BFFFF
00D0000–00DFFFF
SA14
0
0
0
0
1
1
1
0
128/64
01C0000–01DFFFF
00E0000–00EFFFF
SA15
0
0
0
0
1
1
1
1
128/64
01E0000–01FFFFF
00F0000–00FFFFF
SA16
0
0
0
1
0
0
0
0
128/64
0200000–021FFFF
0100000–010FFFF
SA17
0
0
0
1
0
0
0
1
128/64
0220000–023FFFF
0110000–011FFFF
SA18
0
0
0
1
0
0
1
0
128/64
0240000–025FFFF
0120000–012FFFF
SA19
0
0
0
1
0
0
1
1
128/64
0260000–027FFFF
0130000–013FFFF
SA20
0
0
0
1
0
1
0
0
128/64
0280000–029FFFF
0140000–014FFFF
SA21
0
0
0
1
0
1
0
1
128/64
02A0000–02BFFFF
0150000–015FFFF
SA22
0
0
0
1
0
1
1
0
128/64
02C0000–02DFFFF
0160000–016FFFF
SA23
0
0
0
1
0
1
1
1
128/64
02E0000–02FFFFF
0170000–017FFFF
SA24
0
0
0
1
1
0
0
0
128/64
0300000–031FFFF
0180000–018FFFF
SA25
0
0
0
1
1
0
0
1
128/64
0320000–033FFFF
0190000–019FFFF
SA26
0
0
0
1
1
0
1
0
128/64
0340000–035FFFF
01A0000–01AFFFF
SA27
0
0
0
1
1
0
1
1
128/64
0360000–037FFFF
01B0000–01BFFFF
SA28
0
0
0
1
1
1
0
0
128/64
0380000–039FFFF
01C0000–01CFFFF
SA29
0
0
0
1
1
1
0
1
128/64
03A0000–03BFFFF
01D0000–01DFFFF
SA30
0
0
0
1
1
1
1
0
128/64
03C0000–03DFFFF
01E0000–01EFFFF
SA31
0
0
0
1
1
1
1
1
128/64
03E0000–03FFFFF
01F0000–01FFFFF
SA32
0
0
1
0
0
0
0
0
128/64
0400000–041FFFF
0200000–020FFFF
SA33
0
0
1
0
0
0
0
1
128/64
0420000–043FFFF
0210000–021FFFF
SA34
0
0
1
0
0
0
1
0
128/64
0440000–045FFFF
0220000–022FFFF
SA35
0
0
1
0
0
0
1
1
128/64
0460000–047FFFF
0230000–023FFFF
SA36
0
0
1
0
0
1
0
0
128/64
0480000–049FFFF
0240000–024FFFF
SA37
0
0
1
0
0
1
0
1
128/64
04A0000–04BFFFF
0250000–025FFFF
SA38
0
0
1
0
0
1
1
0
128/64
04C0000–04DFFFF
0260000–026FFFF
SA39
0
0
1
0
0
1
1
1
128/64
04E0000–04FFFFF
0270000–027FFFF
SA40
0
0
1
0
1
0
0
0
128/64
0500000–051FFFF
0280000–028FFFF
SA41
0
0
1
0
1
0
0
1
128/64
0520000–053FFFF
0290000–029FFFF
SA42
0
0
1
0
1
0
1
0
128/64
0540000–055FFFF
02A0000–02AFFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 3.
Sector
S h e e t
Sector Address Table–S29GL256N (Sheet 2 of 6)
A23–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
0560000–057FFFF
02B0000–02BFFFF
SA43
0
0
1
0
1
0
1
1
128/64
SA44
0
0
1
0
1
1
0
0
128/64
0580000–059FFFF
02C0000–02CFFFF
SA45
0
0
1
0
1
1
0
1
128/64
05A0000–05BFFFF
02D0000–02DFFFF
SA46
0
0
1
0
1
1
1
0
128/64
05C0000–05DFFFF
02E0000–02EFFFF
SA47
0
0
1
0
1
1
1
1
128/64
05E0000–05FFFFF
02F0000–02FFFFF
SA48
0
0
1
1
0
0
0
0
128/64
0600000–061FFFF
0300000–030FFFF
SA49
0
0
1
1
0
0
0
1
128/64
0620000–063FFFF
0310000–031FFFF
SA50
0
0
1
1
0
0
1
0
128/64
0640000–065FFFF
0320000–032FFFF
SA51
0
0
1
1
0
0
1
1
128/64
0660000–067FFFF
0330000–033FFFF
SA52
0
0
1
1
0
1
0
0
128/64
0680000–069FFFF
0340000–034FFFF
SA53
0
0
1
1
0
1
0
1
128/64
06A0000–06BFFFF
0350000–035FFFF
SA54
0
0
1
1
0
1
1
0
128/64
06C0000–06DFFFF
0360000–036FFFF
SA55
0
0
1
1
0
1
1
1
128/64
06E0000–06FFFFF
0370000–037FFFF
SA56
0
0
1
1
1
0
0
0
128/64
0700000–071FFFF
0380000–038FFFF
SA57
0
0
1
1
1
0
0
1
128/64
0720000–073FFFF
0390000–039FFFF
SA58
0
0
1
1
1
0
1
0
128/64
0740000–075FFFF
03A0000–03AFFFF
SA59
0
0
1
1
1
0
1
1
128/64
0760000–077FFFF
03B0000–03BFFFF
SA60
0
0
1
1
1
1
0
0
128/64
0780000–079FFFF
03C0000–03CFFFF
SA61
0
0
1
1
1
1
0
1
128/64
07A0000–7BFFFF
03D0000–03DFFFF
SA62
0
0
1
1
1
1
1
0
128/64
07C0000–07DFFFF
03E0000–03EFFFF
SA63
0
0
1
1
1
1
1
1
128/64
07E0000–07FFFFF0
03F0000–03FFFFF
SA64
0
1
0
0
0
0
0
0
128/64
0800000–081FFFF
0400000–040FFFF
SA65
0
1
0
0
0
0
0
1
128/64
0820000–083FFFF
0410000–041FFFF
SA66
0
1
0
0
0
0
1
0
128/64
0840000–085FFFF
0420000–042FFFF
SA67
0
1
0
0
0
0
1
1
128/64
0860000–087FFFF
0430000–043FFFF
SA68
0
1
0
0
0
1
0
0
128/64
0880000–089FFFF
0440000–044FFFF
SA69
0
1
0
0
0
1
0
1
128/64
08A0000–08BFFFF
0450000–045FFFF
SA70
0
1
0
0
0
1
1
0
128/64
08C0000–08DFFFF
0460000–046FFFF
SA71
0
1
0
0
0
1
1
1
128/64
08E0000–08FFFFF
0470000–047FFFF
SA72
0
1
0
0
1
0
0
0
128/64
0900000–091FFFF
0480000–048FFFF
SA73
0
1
0
0
1
0
0
1
128/64
0920000–093FFFF
0490000–049FFFF
SA74
0
1
0
0
1
0
1
0
128/64
0940000–095FFFF
04A0000–04AFFFF
SA75
0
1
0
0
1
0
1
1
128/64
0960000–097FFFF
04B0000–04BFFFF
SA76
0
1
0
0
1
1
0
0
128/64
0980000–099FFFF
04C0000–04CFFFF
SA77
0
1
0
0
1
1
0
1
128/64
09A0000–09BFFFF
04D0000–04DFFFF
SA78
0
1
0
0
1
1
1
0
128/64
09C0000–09DFFFF
04E0000–04EFFFF
SA79
0
1
0
0
1
1
1
1
128/64
09E0000–09FFFFF
04F0000–04FFFFF
SA80
0
1
0
1
0
0
0
0
128/64
0A00000–0A1FFFF
0500000–050FFFF
SA81
0
1
0
1
0
0
0
1
128/64
0A20000–0A3FFFF
0510000–051FFFF
SA82
0
1
0
1
0
0
1
0
128/64
0A40000–045FFFF
0520000–052FFFF
SA83
0
1
0
1
0
0
1
1
128/64
0A60000–0A7FFFF
0530000–053FFFF
SA84
0
1
0
1
0
1
0
0
128/64
0A80000–0A9FFFF
0540000–054FFFF
SA85
0
1
0
1
0
1
0
1
128/64
0AA0000–0ABFFFF
0550000–055FFFF
SA86
0
1
0
1
0
1
1
0
128/64
0AC0000–0ADFFFF
0560000–056FFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
29
D a t a
Table 3.
Sector
30
S h e e t
Sector Address Table–S29GL256N (Sheet 3 of 6)
A23–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA87
0
1
0
1
0
1
1
1
128/64
0AE0000–AEFFFFF
0570000–057FFFF
SA88
0
1
0
1
1
0
0
0
128/64
0B00000–0B1FFFF
0580000–058FFFF
SA89
0
1
0
1
1
0
0
1
128/64
0B20000–0B3FFFF
0590000–059FFFF
SA90
0
1
0
1
1
0
1
0
128/64
0B40000–0B5FFFF
05A0000–05AFFFF
SA91
0
1
0
1
1
0
1
1
128/64
0B60000–0B7FFFF
05B0000–05BFFFF
SA92
0
1
0
1
1
1
0
0
128/64
0B80000–0B9FFFF
05C0000–05CFFFF
SA93
0
1
0
1
1
1
0
1
128/64
0BA0000–0BBFFFF
05D0000–05DFFFF
SA94
0
1
0
1
1
1
1
0
128/64
0BC0000–0BDFFFF
05E0000–05EFFFF
SA95
0
1
0
1
1
1
1
1
128/64
0BE0000–0BFFFFF
05F0000–05FFFFF
SA96
0
1
1
0
0
0
0
0
128/64
0C00000–0C1FFFF
0600000–060FFFF
SA97
0
1
1
0
0
0
0
1
128/64
0C20000–0C3FFFF
0610000–061FFFF
SA98
0
1
1
0
0
0
1
0
128/64
0C40000–0C5FFFF
0620000–062FFFF
SA99
0
1
1
0
0
0
1
1
128/64
0C60000–0C7FFFF
0630000–063FFFF
SA100
0
1
1
0
0
1
0
0
128/64
0C80000–0C9FFFF
0640000–064FFFF
SA101
0
1
1
0
0
1
0
1
128/64
0CA0000–0CBFFFF
0650000–065FFFF
SA102
0
1
1
0
0
1
1
0
128/64
0CC0000–0CDFFFF
0660000–066FFFF
SA103
0
1
1
0
0
1
1
1
128/64
0CE0000–0CFFFFF
0670000–067FFFF
SA104
0
1
1
0
1
0
0
0
128/64
0D00000–0D1FFFF
0680000–068FFFF
SA105
0
1
1
0
1
0
0
1
128/64
0D20000–0D3FFFF
0690000–069FFFF
SA106
0
1
1
0
1
0
1
0
128/64
0D40000–0D5FFFF
06A0000–06AFFFF
SA107
0
1
1
0
1
0
1
1
128/64
0D60000–0D7FFFF
06B0000–06BFFFF
SA108
0
1
1
0
1
1
0
0
128/64
0D80000–0D9FFFF
06C0000–06CFFFF
SA109
0
1
1
0
1
1
0
1
128/64
0DA0000–0DBFFFF
06D0000–06DFFFF
SA110
0
1
1
0
1
1
1
0
128/64
0DC0000–0DDFFFF
06E0000–06EFFFF
SA111
0
1
1
0
1
1
1
1
128/64
0DE0000–0DFFFFF
06F0000–06FFFFF
SA112
0
1
1
1
0
0
0
0
128/64
0E00000–0E1FFFF
0700000–070FFFF
SA113
0
1
1
1
0
0
0
1
128/64
0E20000–0E3FFFF
0710000–071FFFF
SA114
0
1
1
1
0
0
1
0
128/64
0E40000–0E5FFFF
0720000–072FFFF
SA115
0
1
1
1
0
0
1
1
128/64
0E60000–0E7FFFF
0730000–073FFFF
SA116
0
1
1
1
0
1
0
0
128/64
0E80000–0E9FFFF
0740000–074FFFF
SA117
0
1
1
1
0
1
0
1
128/64
0EA0000–0EBFFFF
0750000–075FFFF
SA118
0
1
1
1
0
1
1
0
128/64
0EC0000–0EDFFFF
0760000–076FFFF
SA119
0
1
1
1
0
1
1
1
128/64
0EE0000–0EFFFFF
0770000–077FFFF
SA120
0
1
1
1
1
0
0
0
128/64
0F00000–0F1FFFF
0780000–078FFFF
SA121
0
1
1
1
1
0
0
1
128/64
0F20000–0F3FFFF
0790000–079FFFF
SA122
0
1
1
1
1
0
1
0
128/64
0F40000–0F5FFFF
07A0000–07AFFFF
SA123
0
1
1
1
1
0
1
1
128/64
0F60000–0F7FFFF
07B0000–07BFFFF
SA124
0
1
1
1
1
1
0
0
128/64
0F80000–0F9FFFF
07C0000–07CFFFF
SA125
0
1
1
1
1
1
0
1
128/64
0FA0000–0FBFFFF
07D0000–07DFFFF
SA126
0
1
1
1
1
1
1
0
128/64
0FC0000–0FDFFFF
07E0000–07EFFFF
SA127
0
1
1
1
1
1
1
1
128/64
0FE0000–0FFFFFF
07F0000–07FFFFF
SA128
1
0
0
0
0
0
0
0
128/64
1000000–101FFFF
0800000–080FFFF
SA129
1
0
0
0
0
0
0
1
128/64
1020000–103FFFF
0810000–081FFFF
SA130
1
0
0
0
0
0
1
0
128/64
1040000–105FFFF
0820000–082FFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 3.
Sector
SA131
S h e e t
Sector Address Table–S29GL256N (Sheet 4 of 6)
A23–A16
1
0
0
0
0
0
1
1
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
128/64
1060000–107FFFF
0830000–083FFFF
SA132
1
0
0
0
0
1
0
0
128/64
1080000–109FFFF
0840000–084FFFF
SA133
1
0
0
0
0
1
0
1
128/64
10A0000–10BFFFF
0850000–085FFFF
SA134
1
0
0
0
0
1
1
0
128/64
10C0000–10DFFFF
0860000–086FFFF
SA135
1
0
0
0
0
1
1
1
128/64
10E0000–10FFFFF
0870000–087FFFF
SA136
1
0
0
0
1
0
0
0
128/64
1100000–111FFFF
0880000–088FFFF
SA137
1
0
0
0
1
0
0
1
128/64
1120000–113FFFF
0890000–089FFFF
SA138
1
0
0
0
1
0
1
0
128/64
1140000–115FFFF
08A0000–08AFFFF
SA139
1
0
0
0
1
0
1
1
128/64
1160000–117FFFF
08B0000–08BFFFF
SA140
1
0
0
0
1
1
0
0
128/64
1180000–119FFFF
08C0000–08CFFFF
SA141
1
0
0
0
1
1
0
1
128/64
11A0000–11BFFFF
08D0000–08DFFFF
SA142
1
0
0
0
1
1
1
0
128/64
11C0000–11DFFFF
08E0000–08EFFFF
SA143
1
0
0
0
1
1
1
1
128/64
11E0000–11FFFFF
08F0000–08FFFFF
SA144
1
0
0
1
0
0
0
0
128/64
1200000–121FFFF
0900000–090FFFF
SA145
1
0
0
1
0
0
0
1
128/64
1220000–123FFFF
0910000–091FFFF
SA146
1
0
0
1
0
0
1
0
128/64
1240000–125FFFF
0920000–092FFFF
SA147
1
0
0
1
0
0
1
1
128/64
1260000–127FFFF
0930000–093FFFF
SA148
1
0
0
1
0
1
0
0
128/64
1280000–129FFFF
0940000–094FFFF
SA149
1
0
0
1
0
1
0
1
128/64
12A0000–12BFFFF
0950000–095FFFF
SA150
1
0
0
1
0
1
1
0
128/64
12C0000–12DFFFF
0960000–096FFFF
SA151
1
0
0
1
0
1
1
1
128/64
12E0000–12FFFFF
0970000–097FFFF
SA152
1
0
0
1
1
0
0
0
128/64
1300000–131FFFF
0980000–098FFFF
SA153
1
0
0
1
1
0
0
1
128/64
1320000–133FFFF
0990000–099FFFF
SA154
1
0
0
1
1
0
1
0
128/64
1340000–135FFFF
09A0000–09AFFFF
SA155
1
0
0
1
1
0
1
1
128/64
1360000–137FFFF
09B0000–09BFFFF
SA156
1
0
0
1
1
1
0
0
128/64
1380000–139FFFF
09C0000–09CFFFF
SA157
1
0
0
1
1
1
0
1
128/64
13A0000–13BFFFF
09D0000–09DFFFF
SA158
1
0
0
1
1
1
1
0
128/64
13C0000–13DFFFF
09E0000–09EFFFF
SA159
1
0
0
1
1
1
1
1
128/64
13E0000–13FFFFF
09F0000–09FFFFF
SA160
1
0
1
0
0
0
0
0
128/64
1400000–141FFFF
0A00000–0A0FFFF
SA161
1
0
1
0
0
0
0
1
128/64
1420000–143FFFF
0A10000–0A1FFFF
SA162
1
0
1
0
0
0
1
0
128/64
1440000–145FFFF
0A20000–0A2FFFF
SA163
1
0
1
0
0
0
1
1
128/64
1460000–147FFFF
0A30000–0A3FFFF
SA164
1
0
1
0
0
1
0
0
128/64
1480000–149FFFF
0A40000–0A4FFFF
SA165
1
0
1
0
0
1
0
1
128/64
14A0000–14BFFFF
0A50000–0A5FFFF
SA166
1
0
1
0
0
1
1
0
128/64
14C0000–14DFFFF
0A60000–0A6FFFF
SA167
1
0
1
0
0
1
1
1
128/64
14E0000–14FFFFF
0A70000–0A7FFFF
SA168
1
0
1
0
1
0
0
0
128/64
1500000–151FFFF
0A80000–0A8FFFF
SA169
1
0
1
0
1
0
0
1
128/64
1520000–153FFFF
0A90000–0A9FFFF
SA170
1
0
1
0
1
0
1
0
128/64
1540000–155FFFF
0AA0000–0AAFFFF
SA171
1
0
1
0
1
0
1
1
128/64
1560000–157FFFF
0AB0000–0ABFFFF
SA172
1
0
1
0
1
1
0
0
128/64
1580000–159FFFF
0AC0000–0ACFFFF
SA173
1
0
1
0
1
1
0
1
128/64
15A0000–15BFFFF
0AD0000–0ADFFFF
SA174
1
0
1
0
1
1
1
0
128/64
15C0000–15DFFFF
0AE0000–0AEFFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
31
D a t a
Table 3.
Sector
32
S h e e t
Sector Address Table–S29GL256N (Sheet 5 of 6)
A23–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA175
1
0
1
0
1
1
1
1
128/64
15E0000–15FFFFF
0AF0000–0AFFFFF
SA176
1
0
1
1
0
0
0
0
128/64
1600000–161FFFF
0B00000–0B0FFFF
SA177
1
0
1
1
0
0
0
1
128/64
1620000–163FFFF
0B10000–0B1FFFF
SA178
1
0
1
1
0
0
1
0
128/64
1640000–165FFFFF
0B20000–0B2FFFF
SA179
1
0
1
1
0
0
1
1
128/64
1660000–167FFFF
0B30000–0B3FFFF
SA180
1
0
1
1
0
1
0
0
128/64
1680000–169FFFF
0B40000–0B4FFFF
SA181
1
0
1
1
0
1
0
1
128/64
16A0000–16BFFFF
0B50000–0B5FFFF
SA182
1
0
1
1
0
1
1
0
128/64
16C0000–16DFFFF
0B60000–0B6FFFF
SA183
1
0
1
1
0
1
1
1
128/64
16E0000–16FFFFF
0B70000–0B7FFFF
SA184
1
0
1
1
1
0
0
0
128/64
1700000–171FFFF
0B80000–0B8FFFF
SA185
1
0
1
1
1
0
0
1
128/64
1720000–173FFFF
0B90000–0B9FFFF
SA186
1
0
1
1
1
0
1
0
128/64
1740000–175FFFF
0BA0000–0BAFFFF
SA187
1
0
1
1
1
0
1
1
128/64
1760000–177FFFF
0BB0000–0BBFFFF
SA188
1
0
1
1
1
1
0
0
128/64
1780000–179FFFF
0BC0000–0BCFFFF
SA189
1
0
1
1
1
1
0
1
128/64
17A0000–17BFFFF
0BD0000–0BDFFFF
SA190
1
0
1
1
1
1
1
0
128/64
17C0000–17DFFFF
0BE0000–0BEFFFF
SA191
1
0
1
1
1
1
1
1
128/64
17E0000–17FFFFF
0BF0000–0BFFFFF
SA192
1
1
0
0
0
0
0
0
128/64
1800000–181FFFF
0C00000–0C0FFFF
SA193
1
1
0
0
0
0
0
1
128/64
1820000–183FFFF
0C10000–0C1FFFF
SA194
1
1
0
0
0
0
1
0
128/64
1840000–185FFFF
0C20000–0C2FFFF
SA195
1
1
0
0
0
0
1
1
128/64
1860000–187FFFF
0C30000–0C3FFFF
SA196
1
1
0
0
0
1
0
0
128/64
1880000–189FFFF
0C40000–0C4FFFF
SA197
1
1
0
0
0
1
0
1
128/64
18A0000–18BFFFF
0C50000–0C5FFFF
SA198
1
1
0
0
0
1
1
0
128/64
18C0000–18DFFFF
0C60000–0C6FFFF
SA199
1
1
0
0
0
1
1
1
128/64
18E0000–18FFFFF
0C70000–0C7FFFF
SA200
1
1
0
0
1
0
0
0
128/64
1900000–191FFFF
0C80000–0C8FFFF
SA201
1
1
0
0
1
0
0
1
128/64
1920000–193FFFF
0C90000–0C9FFFF
SA202
1
1
0
0
1
0
1
0
128/64
1940000–195FFFF
0CA0000–0CAFFFF
SA203
1
1
0
0
1
0
1
1
128/64
1960000–197FFFF
0CB0000–0CBFFFF
SA204
1
1
0
0
1
1
0
0
128/64
1980000–199FFFF
0CC0000–0CCFFFF
SA205
1
1
0
0
1
1
0
1
128/64
19A0000–19BFFFF
0CD0000–0CDFFFF
SA206
1
1
0
0
1
1
1
0
128/64
19C0000–19DFFFF
0CE0000–0CEFFFF
SA207
1
1
0
0
1
1
1
1
128/64
19E0000–19FFFF
0CF0000–0CFFFFF
SA208
1
1
0
1
0
0
0
0
128/64
1A00000–1A1FFFF
0D00000–0D0FFFF
SA209
1
1
0
1
0
0
0
1
128/64
1A20000–1A3FFFF
0D10000–0D1FFFF
SA210
1
1
0
1
0
0
1
0
128/64
1A40000–1A5FFFF
0D20000–0D2FFFF
SA211
1
1
0
1
0
0
1
1
128/64
1A60000–1A7FFFF
0D30000–0D3FFFF
SA212
1
1
0
1
0
1
0
0
128/64
1A80000–1A9FFFF
0D40000–0D4FFFF
SA213
1
1
0
1
0
1
0
1
128/64
1AA0000–1ABFFFF
0D50000–0D5FFFF
SA214
1
1
0
1
0
1
1
0
128/64
1AC0000–1ADFFFF
0D60000–0D6FFFF
SA215
1
1
0
1
0
1
1
1
128/64
1AE0000–1AFFFFF
0D70000–0D7FFFF
SA216
1
1
0
1
1
0
0
0
128/64
1B00000–1B1FFFF
0D80000–0D8FFFF
SA217
1
1
0
1
1
0
0
1
128/64
1B20000–1B3FFFF
0D90000–0D9FFFF
SA218
1
1
0
1
1
0
1
0
128/64
1B40000–1B5FFFF
0DA0000–0DAFFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 3.
Sector
S h e e t
Sector Address Table–S29GL256N (Sheet 6 of 6)
A23–A16
Sector Size
(Kbytes/Kwords)
8-bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
1B60000–1B7FFFF
0DB0000–0DBFFFF
SA219
1
1
0
1
1
0
1
1
128/64
SA220
1
1
0
1
1
1
0
0
128/64
1B80000–1B9FFFF
0DC0000–0DCFFFF
SA221
1
1
0
1
1
1
0
1
128/64
1BA0000–1BBFFFF
0DD0000–0DDFFFF
SA222
1
1
0
1
1
1
1
0
128/64
1BC0000–1BDFFFF
0DE0000–0DEFFFF
SA223
1
1
0
1
1
1
1
1
128/64
1BE0000–1BFFFFF
0DF0000–0DFFFFF
SA224
1
1
1
0
0
0
0
0
128/64
1C00000–1C1FFFF
0E00000–0E0FFFF
SA225
1
1
1
0
0
0
0
1
128/64
1C20000–1C3FFFF
0E10000–0E1FFFF
SA226
1
1
1
0
0
0
1
0
128/64
1C40000–1C5FFFF
0E20000–0E2FFFF
SA227
1
1
1
0
0
0
1
1
128/64
1C60000–1C7FFFF
0E30000–0E3FFFF
SA228
1
1
1
0
0
1
0
0
128/64
1C80000–1C9FFFF
0E40000–0E4FFFF
SA229
1
1
1
0
0
1
0
1
128/64
1CA0000–1CBFFFF
0E50000–0E5FFFF
SA230
1
1
1
0
0
1
1
0
128/64
1CC0000–1CDFFFF
0E60000–0E6FFFF
SA231
1
1
1
0
0
1
1
1
128/64
1CE0000–1CFFFFF
0E70000–0E7FFFF
SA232
1
1
1
0
1
0
0
0
128/64
1D00000–1D1FFFF
0E80000–0E8FFFF
SA233
1
1
1
0
1
0
0
1
128/64
1D20000–1D3FFFF
0E90000–0E9FFFF
SA234
1
1
1
0
1
0
1
0
128/64
1D40000–1D5FFFF
0EA0000–0EAFFFF
SA235
1
1
1
0
1
0
1
1
128/64
1D60000–1D7FFFF
0EB0000–0EBFFFF
SA236
1
1
1
0
1
1
0
0
128/64
1D80000–1D9FFFF
0EC0000–0ECFFFF
SA237
1
1
1
0
1
1
0
1
128/64
1DA0000–1DBFFFF
0ED0000–0EDFFFF
SA238
1
1
1
0
1
1
1
0
128/64
1DC0000–1DDFFFF
0EE0000–0EEFFFF
SA239
1
1
1
0
1
1
1
1
128/64
1DE0000–1DFFFFF
0EF0000–0EFFFFF
SA240
1
1
1
1
0
0
0
0
128/64
1E00000–1E1FFFF
0F00000–0F0FFFF
SA241
1
1
1
1
0
0
0
1
128/64
1E20000–1E3FFFF
0F10000–0F1FFFF
SA242
1
1
1
1
0
0
1
0
128/64
1E40000–1E5FFFF
0F20000–0F2FFFF
SA243
1
1
1
1
0
0
1
1
128/64
1E60000–137FFFF
0F30000–0F3FFFF
SA244
1
1
1
1
0
1
0
0
128/64
1E80000–1E9FFFF
0F40000–0F4FFFF
SA245
1
1
1
1
0
1
0
1
128/64
1EA0000–1EBFFFF
0F50000–0F5FFFF
SA246
1
1
1
1
0
1
1
0
128/64
1EC0000–1EDFFFF
0F60000–0F6FFFF
SA247
1
1
1
1
0
1
1
1
128/64
1EE0000–1EFFFFF
0F70000–0F7FFFF
SA248
1
1
1
1
1
0
0
0
128/64
1F00000–1F1FFFF
0F80000–0F8FFFF
SA249
1
1
1
1
1
0
0
1
128/64
1F20000–1F3FFFF
0F90000–0F9FFFF
SA250
1
1
1
1
1
0
1
0
128/64
1F40000–1F5FFFF
0FA0000–0FAFFFF
SA251
1
1
1
1
1
0
1
1
128/64
1F60000–1F7FFFF
0FB0000–0FBFFFF
SA252
1
1
1
1
1
1
0
0
128/64
1F80000–1F9FFFF
0FC0000–0FCFFFF
SA253
1
1
1
1
1
1
0
1
128/64
1FA0000–1FBFFFF
0FD0000–0FDFFFF
SA254
1
1
1
1
1
1
1
0
128/64
1FC0000–1FDFFFF
0FE0000–0FEFFFF
SA255
1
1
1
1
1
1
1
1
128/64
1FE0000–1FFFFFF
0FF0000–0FFFFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
33
D a t a
Table 4.
Sector
34
S h e e t
Sector Address Table–S29GL128N (Sheet 1 of 3)
A22–A16
Sector Size
(Kbytes/Kwords)
8-Bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
0
128/64
0000000–001FFFF
0000000–000FFFF
SA1
0
0
0
0
0
0
1
128/64
0020000–003FFFF
0010000–001FFFF
SA2
0
0
0
0
0
1
0
128/64
0040000–005FFFF
0020000–002FFFF
SA3
0
0
0
0
0
1
1
128/64
0060000–007FFFF
0030000–003FFFF
SA4
0
0
0
0
1
0
0
128/64
0080000–009FFFF
0040000–004FFFF
SA5
0
0
0
0
1
0
1
128/64
00A0000–00BFFFF
0050000–005FFFF
SA6
0
0
0
0
1
1
0
128/64
00C0000–00DFFFF
0060000–006FFFF
SA7
0
0
0
0
1
1
1
128/64
00E0000–00FFFFF
0070000–007FFFF
SA8
0
0
0
1
0
0
0
128/64
0100000–011FFFF
0080000–008FFFF
SA9
0
0
0
1
0
0
1
128/64
0120000–013FFFF
0090000–009FFFF
SA10
0
0
0
1
0
1
0
128/64
0140000–015FFFF
00A0000–00AFFFF
SA11
0
0
0
1
0
1
1
128/64
0160000–017FFFF
00B0000–00BFFFF
SA12
0
0
0
1
1
0
0
128/64
0180000–019FFFF
00C0000–00CFFFF
SA13
0
0
0
1
1
0
1
128/64
01A0000–01BFFFF
00D0000–00DFFFF
SA14
0
0
0
1
1
1
0
128/64
01C0000–01DFFFF
00E0000–00EFFFF
SA15
0
0
0
1
1
1
1
128/64
01E0000–01FFFFF
00F0000–00FFFFF
SA16
0
0
1
0
0
0
0
128/64
0200000–021FFFF
0100000–010FFFF
SA17
0
0
1
0
0
0
1
128/64
0220000–023FFFF
0110000–011FFFF
SA18
0
0
1
0
0
1
0
128/64
0240000–025FFFF
0120000–012FFFF
SA19
0
0
1
0
0
1
1
128/64
0260000–027FFFF
0130000–013FFFF
SA20
0
0
1
0
1
0
0
128/64
0280000–029FFFF
0140000–014FFFF
SA21
0
0
1
0
1
0
1
128/64
02A0000–02BFFFF
0150000–015FFFF
SA22
0
0
1
0
1
1
0
128/64
02C0000–02DFFFF
0160000–016FFFF
SA23
0
0
1
0
1
1
1
128/64
02E0000–02FFFFF
0170000–017FFFF
SA24
0
0
1
1
0
0
0
128/64
0300000–031FFFF
0180000–018FFFF
SA25
0
0
1
1
0
0
1
128/64
0320000–033FFFF
0190000–019FFFF
SA26
0
0
1
1
0
1
0
128/64
0340000–035FFFF
01A0000–01AFFFF
SA27
0
0
1
1
0
1
1
128/64
0360000–037FFFF
01B0000–01BFFFF
SA28
0
0
1
1
1
0
0
128/64
0380000–039FFFF
01C0000–01CFFFF
SA29
0
0
1
1
1
0
1
128/64
03A0000–03BFFFF
01D0000–01DFFFF
SA30
0
0
1
1
1
1
0
128/64
03C0000–03DFFFF
01E0000–01EFFFF
SA31
0
0
1
1
1
1
1
128/64
03E0000–03FFFFF
01F0000–01FFFFF
SA32
0
1
0
0
0
0
0
128/64
0400000–041FFFF
0200000–020FFFF
SA33
0
1
0
0
0
0
1
128/64
0420000–043FFFF
0210000–021FFFF
SA34
0
1
0
0
0
1
0
128/64
0440000–045FFFF
0220000–022FFFF
SA35
0
1
0
0
0
1
1
128/64
0460000–047FFFF
0230000–023FFFF
SA36
0
1
0
0
1
0
0
128/64
0480000–049FFFF
0240000–024FFFF
SA37
0
1
0
0
1
0
1
128/64
04A0000–04BFFFF
0250000–025FFFF
SA38
0
1
0
0
1
1
0
128/64
04C0000–04DFFFF
0260000–026FFFF
SA39
0
1
0
0
1
1
1
128/64
04E0000–04FFFFF
0270000–027FFFF
SA40
0
1
0
1
0
0
0
128/64
0500000–051FFFF
0280000–028FFFF
SA41
0
1
0
1
0
0
1
128/64
0520000–053FFFF
0290000–029FFFF
SA42
0
1
0
1
0
1
0
128/64
0540000–055FFFF
02A0000–02AFFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 4.
Sector
S h e e t
Sector Address Table–S29GL128N (Sheet 2 of 3)
A22–A16
Sector Size
(Kbytes/Kwords)
8-Bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
0560000–057FFFF
02B0000–02BFFFF
SA43
0
1
0
1
0
1
1
128/64
SA44
0
1
0
1
1
0
0
128/64
0580000–059FFFF
02C0000–02CFFFF
SA45
0
1
0
1
1
0
1
128/64
05A0000–05BFFFF
02D0000–02DFFFF
SA46
0
1
0
1
1
1
0
128/64
05C0000–05DFFFF
02E0000–02EFFFF
SA47
0
1
0
1
1
1
1
128/64
05E0000–05FFFFF
02F0000–02FFFFF
SA48
0
1
1
0
0
0
0
128/64
0600000–061FFFF
0300000–030FFFF
SA49
0
1
1
0
0
0
1
128/64
0620000–063FFFF
0310000–031FFFF
SA50
0
1
1
0
0
1
0
128/64
0640000–065FFFF
0320000–032FFFF
SA51
0
1
1
0
0
1
1
128/64
0660000–067FFFF
0330000–033FFFF
SA52
0
1
1
0
1
0
0
128/64
0680000–069FFFF
0340000–034FFFF
SA53
0
1
1
0
1
0
1
128/64
06A0000–06BFFFF
0350000–035FFFF
SA54
0
1
1
0
1
1
0
128/64
06C0000–06DFFFF
0360000–036FFFF
SA55
0
1
1
0
1
1
1
128/64
06E0000–06FFFFF
0370000–037FFFF
SA56
0
1
1
1
0
0
0
128/64
0700000–071FFFF
0380000–038FFFF
SA57
0
1
1
1
0
0
1
128/64
0720000–073FFFF
0390000–039FFFF
SA58
0
1
1
1
0
1
0
128/64
0740000–075FFFF
03A0000–03AFFFF
SA59
0
1
1
1
0
1
1
128/64
0760000–077FFFF
03B0000–03BFFFF
SA60
0
1
1
1
1
0
0
128/64
0780000–079FFFF
03C0000–03CFFFF
SA61
0
1
1
1
1
0
1
128/64
07A0000–07BFFFF
03D0000–03DFFFF
SA62
0
1
1
1
1
1
0
128/64
07C0000–07DFFFF
03E0000–03EFFFF
SA63
0
1
1
1
1
1
1
128/64
07E0000–07FFFFF
03F0000–03FFFFF
SA64
1
0
0
0
0
0
0
128/64
0800000–081FFFF
0400000–040FFFF
SA65
1
0
0
0
0
0
1
128/64
0820000–083FFFF
0410000–041FFFF
SA66
1
0
0
0
0
1
0
128/64
0840000–085FFFF
0420000–042FFFF
SA67
1
0
0
0
0
1
1
128/64
0860000–087FFFF
0430000–043FFFF
SA68
1
0
0
0
1
0
0
128/64
0880000–089FFFF
0440000–044FFFF
SA69
1
0
0
0
1
0
1
128/64
08A0000–08BFFFF
0450000–045FFFF
SA70
1
0
0
0
1
1
0
128/64
08C0000–08DFFFF
0460000–046FFFF
SA71
1
0
0
0
1
1
1
128/64
08E0000–08FFFFF
0470000–047FFFF
SA72
1
0
0
1
0
0
0
128/64
0900000–091FFFF
0480000–048FFFF
SA73
1
0
0
1
0
0
1
128/64
0920000–093FFFF
0490000–049FFFF
SA74
1
0
0
1
0
1
0
128/64
0940000–095FFFF
04A0000–04AFFFF
SA75
1
0
0
1
0
1
1
128/64
0960000–097FFFF
04B0000–04BFFFF
SA76
1
0
0
1
1
0
0
128/64
0980000–099FFFF
04C0000–04CFFFF
SA77
1
0
0
1
1
0
1
128/64
09A0000–09BFFFF
04D0000–04DFFFF
SA78
1
0
0
1
1
1
0
128/64
09C0000–09DFFFF
04E0000–04EFFFF
SA79
1
0
0
1
1
1
1
128/64
09E0000–09FFFFF
04F0000–04FFFFF
SA80
1
0
1
0
0
0
0
128/64
0A00000–0A1FFFF
0500000–050FFFF
SA81
1
0
1
0
0
0
1
128/64
0A20000–0A3FFFF
0510000–051FFFF
SA82
1
0
1
0
0
1
0
128/64
0A40000–0A5FFFF
0520000–052FFFF
SA83
1
0
1
0
0
1
1
128/64
0A60000–0A7FFFF
0530000–053FFFF
SA84
1
0
1
0
1
0
0
128/64
0A80000–0A9FFFF
0540000–054FFFF
SA85
1
0
1
0
1
0
1
128/64
0AA0000–0ABFFFF
0550000–055FFFF
SA86
1
0
1
0
1
1
0
128/64
0AC0000–0ADFFFF
0560000–056FFFF
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
35
D a t a
Table 4.
Sector
36
S h e e t
Sector Address Table–S29GL128N (Sheet 3 of 3)
A22–A16
Sector Size
(Kbytes/Kwords)
8-Bit
Address Range
(in hexadecimal)
16-bit
Address Range
(in hexadecimal)
SA87
1
0
1
0
1
1
1
128/64
0AE0000–0AFFFFF
0570000–057FFFF
SA88
1
0
1
1
0
0
0
128/64
0B00000–0B1FFFF
0580000–058FFFF
SA89
1
0
1
1
0
0
1
128/64
0B20000–0B3FFFF
0590000–059FFFF
SA90
1
0
1
1
0
1
0
128/64
0B40000–0B5FFFF
05A0000–05AFFFF
SA91
1
0
1
1
0
1
1
128/64
0B60000–0B7FFFF
05B0000–05BFFFF
SA92
1
0
1
1
1
0
0
128/64
0B80000–0B9FFFF
05C0000–05CFFFF
SA93
1
0
1
1
1
0
1
128/64
0BA0000–0BBFFFF
05D0000–05DFFFF
SA94
1
0
1
1
1
1
0
128/64
0BC0000–0BDFFFF
05E0000–05EFFFF
SA95
1
0
1
1
1
1
1
128/64
0BE0000–0BFFFFF
05F0000–05FFFFF
SA96
1
1
0
0
0
0
0
128/64
0C00000–0C1FFFF
0600000–060FFFF
SA97
1
1
0
0
0
0
1
128/64
0C20000–0C3FFFF
0610000–061FFFF
SA98
1
1
0
0
0
1
0
128/64
0C40000–0C5FFFF
0620000–062FFFF
SA99
1
1
0
0
0
1
1
128/64
0C60000–0C7FFFF
0630000–063FFFF
SA100
1
1
0
0
1
0
0
128/64
0C80000–0C9FFFF
0640000–064FFFF
SA101
1
1
0
0
1
0
1
128/64
0CA0000–0CBFFFF
0650000–065FFFF
SA102
1
1
0
0
1
1
0
128/64
0CC0000–0CDFFFF
0660000–066FFFF
SA103
1
1
0
0
1
1
1
128/64
0CE0000–0CFFFFF
0670000–067FFFF
SA104
1
1
0
1
0
0
0
128/64
0D00000–0D1FFFF
0680000–068FFFF
SA105
1
1
0
1
0
0
1
128/64
0D20000–0D3FFFF
0690000–069FFFF
SA106
1
1
0
1
0
1
0
128/64
0D40000–0D5FFFF
06A0000–06AFFFF
SA107
1
1
0
1
0
1
1
128/64
0D60000–0D7FFFF
06B0000–06BFFFF
SA108
1
1
0
1
1
0
0
128/64
0D80000–0D9FFFF
06C0000–06CFFFF
SA109
1
1
0
1
1
0
1
128/64
0DA0000–0DBFFFF
06D0000–06DFFFF
SA110
1
1
0
1
1
1
0
128/64
0DC0000–0DDFFFF
06E0000–06EFFFF
SA111
1
1
0
1
1
1
1
128/64
0DE0000–0DFFFFF
06F0000–06FFFFF
SA112
1
1
1
0
0
0
0
128/64
0E00000–0E1FFFF
0700000–070FFFF
SA113
1
1
1
0
0
0
1
128/64
0E20000–0E3FFFF
0710000–071FFFF
SA114
1
1
1
0
0
1
0
128/64
0E40000–0E5FFFF
0720000–072FFFF
SA115
1
1
1
0
0
1
1
128/64
0E60000–0E7FFFF
0730000–073FFFF
SA116
1
1
1
0
1
0
0
128/64
0E80000–0E9FFFF
0740000–074FFFF
SA117
1
1
1
0
1
0
1
128/64
0EA0000–0EBFFFF
0750000–075FFFF
SA118
1
1
1
0
1
1
0
128/64
0EC0000–0EDFFFF
0760000–076FFFF
SA119
1
1
1
0
1
1
1
128/64
0EE0000–0EFFFFF
0770000–077FFFF
SA120
1
1
1
1
0
0
0
128/64
0F00000–0F1FFFF
0780000–078FFFF
SA121
1
1
1
1
0
0
1
128/64
0F20000–0F3FFFF
0790000–079FFFF
SA122
1
1
1
1
0
1
0
128/64
0F40000–0F5FFFF
07A0000–07AFFFF
SA123
1
1
1
1
0
1
1
128/64
0F60000–0F7FFFF
07B0000–07BFFFF
SA124
1
1
1
1
1
0
0
128/64
0F80000–0F9FFFF
07C0000–07CFFFF
SA125
1
1
1
1
1
0
1
128/64
0FA0000–0FBFFFF
07D0000–07DFFFF
SA126
1
1
1
1
1
1
0
128/64
0FC0000–0FDFFFF
07E0000–07EFFFF
SA127
1
1
1
1
1
1
1
128/64
0FE0000–0FFFFFF
07F0000–07FFFFF
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector group protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily
intended for programming equipment to automatically match a device to be programmed
with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register.
When using programming equipment, the autoselect mode requires VID on address pin A9.
Address pins A6, A3, A2, A1, and A0 must be as shown in Table 5 on page 37. In addition,
when verifying sector protection, the sector address must appear on the appropriate highest
order address bits (see Table 2 on page 16). Table 5 on page 37 shows the remaining address
bits that are don’t care. When all necessary bits have been set as required, the programming
equipment may then read the corresponding identifier code on DQ7–DQ0.
To access the autoselect codes in-system, the host system can issue the autoselect command
via the command register, as shown in Table 12 on page 63 and Table 14 on page 65. This
method does not require VID. Refer to the “Autoselect Command Sequence” section on page
51 for more information.
Table 5.
DQ8 to DQ15
CE#
OE#
WE#
A22t
o
A15
A14
to
A10
A9
A8
to
A7
A6
A5
to
A4
A3
to
A2
A1
A0
BYTE#
= VIH
BYTE#
= VIL
DQ7 to DQ0
L
L
H
X
X
VID
X
L
X
L
L
L
00
X
01h
L
L
H
22
X
7Eh
H
H
L
22
X
23h
Cycle 3
H
H
H
22
X
01h
Cycle 1
L
L
H
22
X
7Eh
H
H
L
22
X
22h
Cycle 3
H
H
H
22
X
01h
Cycle 1
L
L
H
22
X
7Eh
H
H
L
22
X
21h
H
H
H
22
X
01h
Description
Manufacturer ID:
Spansion Product
Device ID
Device ID
Device ID
S29GL128N S29GL256N S29GL512N
Autoselect Codes (High Voltage Method)
Cycle 1
Cycle 2
Cycle 2
Cycle 2
L
L
L
L
L
L
H
H
H
X
X
X
X
X
X
VID
VID
VID
X
X
X
L
L
L
X
X
X
Cycle 3
Sector Group
Protection Verification
L
L
H
SA
X
VID
X
L
X
L
H
L
X
X
01h (protected),
00h (unprotected)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects highest
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
98h (factory locked),
18h (not factory locked)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects lowest
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
88h (factory locked),
08h (not factory locked)
Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
37
D a t a
S h e e t
Sector Protection
The device features several levels of sector protection, which can disable both the program
and erase operations in certain sectors or sector groups:
Persistent Sector Protection
A command sector protection method that replaces the old 12 V controlled protection method.
Password Sector Protection
A highly sophisticated protection method that requires a password before changes to certain
sectors or sector groups are permitted
WP# Hardware Protection
A write protect pin that can prevent program or erase operations in the outermost sectors.
The WP# Hardware Protection feature is always available, independent of the software managed protection method chosen.
Selecting a Sector Protection Mode
All parts default to operate in the Persistent Sector Protection mode. The customer must then
choose if the Persistent or Password Protection method is most desirable. There are two
one-time programmable non-volatile bits that define which sector protection method is used.
If the customer decides to continue using the Persistent Sector Protection method, they must
set the Persistent Sector Protection Mode Locking Bit. This permanently sets the part to
operate only using Persistent Sector Protection. If the customer decides to use the password
method, they must set the Password Mode Locking Bit. This permanently sets the part to
operate only using password sector protection.
It is important to remember that setting either the Persistent Sector Protection Mode
Locking Bit or the Password Mode Locking Bit permanently selects the protection mode.
It is not possible to switch between the two methods once a locking bit is set. It is important
that one mode is explicitly selected when the device is first programmed, rather
than relying on the default mode alone. This is so that it is not possible for a system program or virus to later set the Password Mode Locking Bit, which would cause an unexpected
shift from the default Persistent Sector Protection Mode into the Password Protection Mode.
The device is shipped with all sectors unprotected. The factory offers the option of programming and protecting sectors at the factory prior to shipping the device through the
ExpressFlash™ Service. Contact your sales representative for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Command Sequence‚ on page 51 for details.
Advanced Sector Protection
Advanced Sector Protection features several levels of sector protection, which can disable
both the program and erase operations in certain sectors.
Persistent Sector Protection is a method that replaces the old 12V controlled protection
method.
Password Sector Protection is a highly sophisticated protection method that requires a
password before changes to certain sectors are permitted.
38
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Lock Register
The Lock Register consists of 3 bits (DQ2, DQ1, and DQ0). These DQ2, DQ1, DQ0 bits of the
Lock Register are programmable by the user. Users are not allowed to program both DQ2 and
DQ1 bits of the Lock Register to the 00 state. If the user tries to program DQ2 and DQ1 bits
of the Lock Register to the 00 state, the device aborts the Lock Register back to the default
11 state. The programming time of the Lock Register is same as the typical word programming time without utilizing the Write Buffer of the device. During a Lock Register
programming sequence execution, the DQ6 Toggle Bit I toggles until the programming of the
Lock Register has completed to indicate programming status. All Lock Register bits are readable to allow users to verify Lock Register statuses.
The Customer Secured Silicon Sector Protection Bit is DQ0, Persistent Protection Mode Lock
Bit is DQ1, and Password Protection Mode Lock Bit is DQ2 are accessible by all users. Each of
these bits are non-volatile. DQ15-DQ3 are reserved and must be 1's when the user tries to
program the DQ2, DQ1, and DQ0 bits of the Lock Register. The user is not required to program
DQ2, DQ1 and DQ0 bits of the Lock Register at the same time. This allows users to lock the
Secured Silicon Sector and then set the device either permanently into Password Protection
Mode or Persistent Protection Mode and then lock the Secured Silicon Sector at separate instances and time frames.
Secured Silicon Sector Protection allows the user to lock the Secured Silicon Sector area
Persistent Protection Mode Lock Bit allows the user to set the device permanently to operate in the Persistent Protection Mode
Password Protection Mode Lock Bit allows the user to set the device permanently to operate in the Password Protection Mode
Table 6.
Lock Register
DQ15-3
DQ2
DQ1
DQ0
Don’t Care
Password Protection
Mode Lock Bit
Persistent Protection
Mode Lock Bit
Secured Silicon Sector
Protection Bit
Persistent Sector Protection
The Persistent Sector Protection method replaces the old 12 V controlled protection method
while at the same time enhancing flexibility by providing three different sector protection
states:

In
Dynamically Locked-The sector is protected and can be changed by a simple command
Persistently Locked-A sector is protected and cannot be changed
Unlocked-The sector is unprotected and can be changed by a simple command
order to achieve these states, three types of “bits” are going to be used:
Dynamic Protection Bit (DYB)
A volatile protection bit is assigned for each sector. After power-up or hardware reset, the
contents of all DYB bits are in the “unprotected state”. Each DYB is individually modifiable
through the DYB Set Command and DYB Clear Command. When the parts are first shipped,
all of the Persistent Protect Bits (PPB) are cleared into the unprotected state. The DYB bits
and PPB Lock bit are defaulted to power up in the cleared state or unprotected state - meaning
the all PPB bits are changeable.
The Protection State for each sector is determined by the logical OR of the PPB and the DYB
related to that sector. For the sectors that have the PPB bits cleared, the DYB bits control
whether or not the sector is protected or unprotected. By issuing the DYB Set and DYB Clear
command sequences, the DYB bits is protected or unprotected, thus placing each sector in
the protected or unprotected state. These are the so-called Dynamic Locked or Unlocked
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
39
D a t a
S h e e t
states. They are called dynamic states because it is very easy to switch back and forth between the protected and un-protected conditions. This allows software to easily protect
sectors against inadvertent changes yet does not prevent the easy removal of protection
when changes are needed.
The DYB bits maybe set or cleared as often as needed. The PPB bits allow for a more static,
and difficult to change, level of protection. The PPB bits retain their state across power cycles
because they are Non-Volatile. Individual PPB bits are set with a program command but must
all be cleared as a group through an erase command.
The PPB Lock Bit adds an additional level of protection. Once all PPB bits are programmed to
the desired settings, the PPB Lock Bit may be set to the “freeze state”. Setting the PPB Lock
Bit to the “freeze state” disables all program and erase commands to the Non-Volatile PPB
bits. In effect, the PPB Lock Bit locks the PPB bits into their current state. The only way to
clear the PPB Lock Bit to the “unfreeze state” is to go through a power cycle, or hardware
reset. The Software Reset command does not clear the PPB Lock Bit to the “unfreeze state”.
System boot code can determine if any changes to the PPB bits are needed e.g. to allow new
system code to be downloaded. If no changes are needed then the boot code can set the PPB
Lock Bit to disable any further changes to the PPB bits during system operation.
The WP# write protect pin adds a final level of hardware protection. When this pin is low it is
not possible to change the contents of the WP# protected sectors. These sectors generally
hold system boot code. So, the WP# pin can prevent any changes to the boot code that could
override the choices made while setting up sector protection during system initialization.
It is possible to have sectors that have been persistently locked, and sectors that are left in
the dynamic state. The sectors in the dynamic state are all unprotected. If there is a need to
protect some of them, a simple DYB Set command sequence is all that is necessary. The DYB
Set and DYB Clear commands for the dynamic sectors switch the DYB bits to signify protected
and unprotected, respectively. If there is a need to change the status of the persistently
locked sectors, a few more steps are required. First, the PPB Lock Bit must be disabled to the
“unfreeze state” by either putting the device through a power-cycle, or hardware reset. The
PPB bits can then be changed to reflect the desired settings. Setting the PPB Lock Bit once
again to the “freeze state” locks the PPB bits, and the device operates normally again.
To achieve the best protection, execute the PPB Lock Bit Set command early in the boot code,
and protect the boot code by holding WP# = VIL.
Persistent Protection Bit (PPB)
A single Persistent (non-volatile) Protection Bit is assigned to each sector. If a PPB is programmed to the protected state through the “PPB Program” command, that sector is
protected from program or erase operations is read-only. If a PPB requires erasure, all of the
sector PPB bits must first be erased in parallel through the “All PPB Erase” command. The “All
PPB Erase” command preprograms all PPB bits prior to PPB erasing. All PPB bits erase in parallel, unlike programming where individual PPB bits are programmable. The PPB bits have the
same endurance as the flash memory.
Programming the PPB bit requires the typical word programming time without utilizing the
Write Buffer. During a PPB bit programming and all PPB bit erasing sequence executions, the
DQ6 Toggle Bit I toggles until the programming of the PPB bit or erasing of all PPB bits has
completed to indicate programming and erasing status. Erasing all of the PPB bits at once requires typical sector erase time. During the erasing of all PPB bits, the DQ3 Sector Erase Timer
bit outputs a 1 to indicate the erasure of all PPB bits are in progress. When the erasure of all
PPB bits has completed, the DQ3 Sector Erase Timer bit outputs a 0 to indicate that all PPB
bits have been erased. Reading the PPB Status bit requires the initial access time of the
device.
40
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Persistent Protection Bit Lock (PPB Lock Bit)
A global volatile bit. When set to the “freeze state”, the PPB bits cannot be changed. When
cleared to the “unfreeze state”, the PPB bits are changeable. There is only one PPB Lock Bit
per device. The PPB Lock Bit is cleared to the “unfreeze state” after power-up or hardware
reset. There is no command sequence to unlock or “unfreeze” the PPB Lock Bit.
Configuring the PPB Lock Bit to the freeze state requires approximately 100ns. Reading the
PPB Lock Status bit requires the initial access time of the device.
Table 7. Sector Protection Schemes
Protection States
Sector State
DYB Bit
PPB Bit
PPB Lock Bit
Unprotect
Unprotect
Unfreeze
Unprotected – PPB and DYB are changeable
Unprotect
Unprotect
Freeze
Unprotected – PPB not changeable, DYB is
changeable
Unprotect
Protect
Unfreeze
Protected – PPB and DYB are changeable
Unprotect
Protect
Freeze
Protected – PPB not changeable, DYB is changeable
Protect
Unprotect
Unfreeze
Protected – PPB and DYB are changeable
Protect
Unprotect
Freeze
Protected – PPB not changeable, DYB is changeable
Protect
Protect
Unfreeze
Protected – PPB and DYB are changeable
Protect
Protect
Freeze
Protected – PPB not changeable, DYB is changeable
Table 7 contains all possible combinations of the DYB bit, PPB bit, and PPB Lock Bit relating
to the status of the sector. In summary, if the PPB bit is set, and the PPB Lock Bit is set, the
sector is protected and the protection cannot be removed until the next power cycle or hardware reset clears the PPB Lock Bit to “unfreeze state”. If the PPB bit is cleared, the sector can
be dynamically locked or unlocked. The DYB bit then controls whether or not the sector is
protected or unprotected. If the user attempts to program or erase a protected sector, the
device ignores the command and returns to read mode. A program command to a protected
sector enables status polling for approximately 1 µs before the device returns to read mode
without having modified the contents of the protected sector. An erase command to a protected sector enables status polling for approximately 50 µs after which the device returns to
read mode without having erased the protected sector. The programming of the DYB bit, PPB
bit, and PPB Lock Bit for a given sector can be verified by writing a DYB Status Read, PPB
Status Read, and PPB Lock Status Read commands to the device.
The Autoselect Sector Protection Verification outputs the OR function of the DYB bit and PPB
bit per sector basis. When the OR function of the DYB bit and PPB bit is a 1, the sector is either
protected by DYB or PPB or both. When the OR function of the DYB bit and PPB bit is a 0, the
sector is unprotected through both the DYB and PPB.
Persistent Protection Mode Lock Bit
Like the Password Protection Mode Lock Bit, a Persistent Protection Mode Lock Bit exists to
guarantee that the device remain in software sector protection. Once programmed, the Persistent Protection Mode Lock Bit prevents programming of the Password Protection Mode Lock
Bit. This guarantees that a hacker could not place the device in Password Protection Mode.
The Password Protection Mode Lock Bit resides in the “Lock Register”.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
41
D a t a
S h e e t
Password Sector Protection
The Password Sector Protection method allows an even higher level of security than the Persistent Sector Protection method. There are two main differences between the Persistent
Sector Protection and the Password Sector Protection methods:
When the device is first powered on, or comes out of a reset cycle, the PPB Lock Bit is set
to the locked state, or the freeze state, rather than cleared to the unlocked state, or the
unfreeze state.
The only means to clear and unfreeze the PPB Lock Bit is by writing a unique 64-bit Password to the device.
The Password Sector Protection method is otherwise identical to the Persistent Sector Protection method.
A 64-bit password is the only additional tool utilized in this method.
The password is stored in a one-time programmable (OTP) region outside of the flash memory. Once the Password Protection Mode Lock Bit is set, the password is permanently set with
no means to read, program, or erase it. The password is used to clear and unfreeze the PPB
Lock Bit. The Password Unlock command must be written to the flash, along with a password.
The flash device internally compares the given password with the pre-programmed password.
If they match, the PPB Lock Bit is cleared to the unfreezed state, and the PPB bits can be
altered. If they do not match, the flash device does nothing. There is a built-in 2 µs delay for
each password check after the valid 64-bit password is entered for the PPB Lock Bit to be
cleared to the “unfreezed state”. This delay is intended to thwart any efforts to run a program
that tries all possible combinations in order to crack the password.
Password and Password Protection Mode Lock Bit
In order to select the Password Sector Protection method, the customer must first program
the password. The factory recommends that the password be somehow correlated to the
unique Electronic Serial Number (ESN) of the particular flash device. Each ESN is different for
every flash device; therefore each password should be different for every flash device. While
programming in the password region, the customer may perform Password Read operations.
Once the desired password is programmed in, the customer must then set the Password Protection Mode Lock Bit. This operation achieves two objectives:
1. It permanently sets the device to operate using the Password Protection Mode. It is not
possible to reverse this function.
2. It also disables all further commands to the password region. All program, and read operations are ignored.
Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors. The user must be sure that the Password Sector Protection method is desired
when programming the Password Protection Mode Lock Bit. More importantly, the user must
be sure that the password is correct when the Password Protection Mode Lock Bit is programmed. Due to the fact that read operations are disabled, there is no means to read what
the password is afterwards. If the password is lost after programming the Password Protection Mode Lock Bit, there is no way to clear and unfreeze the PPB Lock Bit. The Password
Protection Mode Lock Bit, once programmed, prevents reading the 64-bit password on the DQ
bus and further password programming. The Password Protection Mode Lock Bit is not erasable. Once Password Protection Mode Lock Bit is programmed, the Persistent Protection Mode
Lock Bit is disabled from programming, guaranteeing that no changes to the protection
scheme are allowed.
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64-bit Password
The 64-bit Password is located in its own memory space and is accessible through the use of
the Password Program and Password Read commands. The password function works in conjunction with the Password Protection Mode Lock Bit, which when programmed, prevents the
Password Read command from reading the contents of the password on the pins of the
device.
Persistent Protection Bit Lock (PPB Lock Bit)
A global volatile bit. The PPB Lock Bit is a volatile bit that reflects the state of the Password
Protection Mode Lock Bit after power-up reset. If the Password Protection Mode Lock Bit is
also programmed after programming the Password, the Password Unlock command must be
issued to clear and unfreeze the PPB Lock Bit after a hardware reset (RESET# asserted) or a
power-up reset. Successful execution of the Password Unlock command clears and unfreezes
the PPB Lock Bit, allowing for sector PPB bits to be modified. Without issuing the Password
Unlock command, while asserting RESET#, taking the device through a power-on reset, or
issuing the PPB Lock Bit Set command sets the PPB Lock Bit to a the “freeze state”.
If the Password Protection Mode Lock Bit is not programmed, the device defaults to Persistent
Protection Mode. In the Persistent Protection Mode, the PPB Lock Bit is cleared to the unfreeze
state after power-up or hardware reset. The PPB Lock Bit is set to the freeze state by issuing
the PPB Lock Bit Set command. Once set to the freeze state the only means for clearing the
PPB Lock Bit to the “unfreeze state” is by issuing a hardware or power-up reset. The Password
Unlock command is ignored in Persistent Protection Mode.
Reading the PPB Lock Bit requires a 200ns access time.
Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a Flash memory region that enables permanent
part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is
256 bytes in length, and uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether
or not the Secured Silicon Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked
part. This ensures the security of the ESN once the product is shipped to the field.
The factory offers the device with the Secured Silicon Sector either customer lockable (standard shipping option) or factory locked (contact an AMD sales representative for ordering
information). The customer-lockable version is shipped with the Secured Silicon Sector unprotected, allowing customers to program the sector after receiving the device. The
customer-lockable version also has the Secured Silicon Sector Indicator Bit permanently set
to a 0. The factory-locked version is always protected when shipped from the factory, and has
the Secured Silicon Sector Indicator Bit permanently set to a 1. Thus, the Secured Silicon Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that
are factory locked.
The Secured Silicon sector address space in this device is allocated as follows:
Secured Silicon Sector
Address Range
000000h–000007h
000008h–00007Fh
Customer Lockable
Determined by
customer
ESN Factory Locked
ExpressFlash
Factory Locked
ESN
ESN or determined by
customer
Unavailable
Determined by
customer
The system accesses the Secured Silicon Sector through a command sequence (see “Write
Protect (WP#)”). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by
S29GL-N_00_B3 October 13, 2006
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the first sector (SA0). This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On
power-up, or following a hardware reset, the device reverts to sending commands to sector
SA0.
Customer Lockable: Secured Silicon Sector NOT Programmed or
Protected At the Factory
Unless otherwise specified, the device is shipped such that the customer may program and
protect the 256-byte Secured Silicon sector.
The system may program the Secured Silicon Sector using the write-buffer, accelerated
and/or unlock bypass methods, in addition to the standard programming command sequence.
See Command Definitions‚ on page 50.
Programming and protecting the Secured Silicon Sector must be used with caution since, once
protected, there is no procedure available for unprotecting the Secured Silicon Sector area
and none of the bits in the Secured Silicon Sector memory space can be modified in any way.
The Secured Silicon Sector area can be protected using one of the following procedures:
Write the three-cycle Enter Secured Silicon Sector Region command.
To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm.
Once the Secured Silicon Sector is programmed, locked and verified, the system must write
the Exit Secured Silicon Sector Region command sequence to return to reading and writing
within the remainder of the array.
Factory Locked: Secured Silicon Sector Programmed and
Protected At the Factory
In devices with an ESN, the Secured Silicon Sector is protected when the device is shipped
from the factory. The Secured Silicon Sector cannot be modified in any way. An ESN Factory
Locked device has an 16-byte random ESN at addresses 000000h–000007h. Please contact
your sales representative for details on ordering ESN Factory Locked devices.
Customers may opt to have their code programmed by the factory through the ExpressFlash
service (Express Flash Factory Locked). The devices are then shipped from the factory with
the Secured Silicon Sector permanently locked. Contact your sales representative for details
on using the ExpressFlash service.
Write Protect (WP#)
The Write Protect function provides a hardware method of protecting the first or last sector
group without using VID. Write Protect is one of two functions provided by the WP#/ACC
input.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the first or last sector group independently of whether those sector groups were
protected or unprotected using the method described in Advanced Sector Protection‚ on
page 38. Note that if WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased. See the table in DC Characteristics‚ on page 74.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the
first or last sector was previously set to be protected or unprotected. Note that WP#
has an internal pullup; when unconnected, WP# is at VIH.
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Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides
data protection against inadvertent writes (refer to Table 12 on page 63 and Table 14 on
page 65 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by
spurious system level signals during VCC power-up and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data
during VCC power-up and power-down. The command register and all internal program/erase
circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored
until VCC is greater than VLKO. The system must provide the proper signals to the control pins
to prevent unintentional writes when VCC is greater than VLKO.
Write Pulse Glitch Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands
on the rising edge of WE#. The internal state machine is automatically reset to the read mode
on power-up.
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Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used
for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families.
Flash vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h,
to address 55h, any time the device is ready to read array data. The system can read CFI
information at the addresses given in Table 8, Table 9 on page 47, and Table 10 on page 48.
To terminate reading CFI data, the system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode.
The device enters the CFI query mode, and the system can read CFI data at the addresses
given in Table 8, Table 9 on page 47, Table 10 on page 48, and Table 11 on page 49. The system must write the reset command to return the device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact your
sales representative for copies of these documents.
Table 8.
CFI Query Identification String
Addresses (x16)
Addresses (x8)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
46
Description
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Table 9.
S h e e t
System Interface String
Addresses (x16)
Addresses (x8)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h
Typical timeout per single byte/word write 2N µs
20h
40h
0007h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0003h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
S29GL-N_00_B3 October 13, 2006
Description
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Table 10.
S h e e t
Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
27h
4Eh
001Ah
0019h
0018h
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device,
02h = boot device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
62h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
48
Description
Device Size = 2N byte
1A = 512 Mb, 19 = 256 Mb, 18 = 128 Mb
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Table 11.
S h e e t
Primary Vendor-Specific Extended Query
Addresses (x16)
Addresses (x8)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0010h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0100b = 110 nm MirrorBit
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0000h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0008h
Sector Protect/Unprotect scheme
0008h = Advanced Sector Protection
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0002h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
4Eh
9Ch
00C5h
4Fh
9Eh
00xxh
50h
A0h
0001h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
WP# Protection
S29GL-N_00_B3 October 13, 2006
04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors
top WP# protect
Program Suspend
00h = Not Supported, 01h = Supported
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Command Definitions
Writing specific address and data commands or sequences into the command register initiates
device operations. Table 12 on page 63 and Table 14 on page 65 define the valid register
command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then
required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data
is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands
are required to retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended
sector. After completing a programming operation in the Erase Suspend mode, the system
may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the
device is in the autoselect mode. See the next section, Reset Command, for more
information.
See also “Requirements for Reading Array Data” section on page 14 for more information.
The Read-Only Operations subsection in the “AC Characteristics” section on page 77 section
provides the read parameters, and Figure 11, on page 78 shows the timing diagram.
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to the read mode. Once erasure begins,
however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to the read mode. If the program
command sequence is written while the device is in the Erase Suspend mode, writing the
reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to the
read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the
device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must
write the Write-to-Buffer-Abort Reset command sequence to reset the device for the next
operation.
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Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and
device codes, and determine whether or not a sector is protected. Table 12 on page 63 and
Table 14 on page 65 show the address and data requirements. This method is an alternative
to that shown in Table 5 on page 37, which is intended for PROM programmers and requires
VID on address pin A9. The autoselect command sequence may be written to an address that
is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing.
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the autoselect command. The device then enters
the autoselect mode. The system may read at any address any number of times without initiating another autoselect command sequence:
A read cycle at address XX00h returns the manufacturer code.
Three read cycles at addresses 01h, 0Eh, and 0Fh return the device code.
A read cycle to an address containing a sector address (SA), and the address 02h on A7–
A0 in word mode returns 01h if the sector is protected, or 00h if it is unprotected.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend).
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte
random Electronic Serial Number (ESN). The system can access the Secured Silicon Sector
region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the
four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector
command sequence returns the device to normal operation. Table 12 on page 63 shows the
address and data requirements for both command sequences. See also “Secured Silicon Sector Flash Memory Region” for further information. Note that the ACC function and unlock
bypass modes are not available when the Secured Silicon Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by
writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 12
on page 63 and Table 14 on page 65 show the address and data requirements for the word
program command sequence.
When the Embedded Program algorithm is complete, the device then returns to the read
mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. Refer to the Write Operation Status section for
information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable
when a program operation is in progress. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once
the device has returned to the read mode, to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector boundaries.
Programming to the same word address multiple times without intervening erases (incremen-
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tal bit programming) is permitted. Word programming is supported for backward
compatibility with existing Flash driver software and for occasional writing of individual words.
Use of Write Buffer Programming is strongly recommended for general programming use
when more than a few words are to be programmed. The effective word programming time
using Write Buffer Programming is much shorter than the single word programming time.
Any bit cannot be programmed from 0 back to a 1. Attempting to do so may cause the
device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was
successful. However, a succeeding read shows that the data is still 0. Only erase operations
can convert a 0 to a 1.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using
the standard program command sequence. The unlock bypass command sequence is initiated
by first writing two unlock cycles. This is followed by a third write cycle containing the unlock
bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock
bypass program command sequence is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass program command, A0h; the second cycle
contains the program address and data. Additional data is programmed in the same manner.
This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 12 on page 63 and Table 14
on page 65 show the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset
commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle
unlock bypass reset command sequence. (See Table 12 on page 63 and Table 14 on
page 65).
Write Buffer Programming
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one
programming operation. This results in faster effective programming time than the standard
programming algorithms. The Write Buffer Programming command sequence is initiated by
first writing two unlock cycles. This is followed by a third write cycle containing the Write
Buffer Load command written at the Sector Address in which programming occurs. The fourth
cycle writes the sector address and the number of word locations, minus one, to be programmed. For example, if the system programs six unique address locations, then 05h should
be written to the device. This tells the device how many write buffer addresses are loaded
with data and therefore when to expect the Program Buffer to Flash command. The number
of locations to program cannot exceed the size of the write buffer or the operation aborts.
The fifth cycle writes the first address location and data to be programmed. The
write-buffer-page is selected by address bits AMAX–A4. All subsequent address/data pairs
must fall within the selected-write-buffer-page. The system then writes the remaining address/data pairs into the write buffer. Write buffer locations may be loaded in any order.
The write-buffer-page address must be the same for all address/data pairs loaded into the
write buffer. (This means Write Buffer Programming cannot be performed across multiple
write-buffer pages. This also means that Write Buffer Programming cannot be performed
across multiple sectors. If the system attempts to load programming data outside of the selected write-buffer page, the operation aborts.)
Note that if a Write Buffer address location is loaded multiple times, the address/data pair
counter is decremented for every data load operation. The host system must therefore account for loading a write-buffer location more than once. The counter decrements for each
data load operation, not for each unique write-buffer-address location. Note also that if an
address location is loaded more than once into the buffer, the final data loaded for that address is programmed.
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Once the specified number of write buffer locations have been loaded, the system must then
write the Program Buffer to Flash command at the sector address. Any other address and data
combination aborts the Write Buffer Programming operation. The device then begins programming. Data polling should be used while monitoring the last address location loaded into
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be monitored to determine the device status during Write Buffer Programming.
The write-buffer programming operation can be suspended using the standard program suspend/resume commands. Upon successful completion of the Write Buffer Programming
operation, the device is ready to execute the next command.
The Write Buffer Programming Sequence can be aborted in the following ways:
Load a value that is greater than the page buffer size during the Number of Locations to
Program step.
Write to an address in a sector different than the one specified during the
Write-Buffer-Load command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the
Starting Address during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location
loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must
be written to reset the device for the next operation.
Write buffer programming is allowed in any sequence. Note that the Secured Silicon sector,
autoselect, and CFI functions are unavailable when a program operation is in progress. This
flash device is capable of handling multiple write buffer programming operations on the same
write buffer address range without intervening erases. Any bit in a write buffer address
range cannot be programmed from 0 back to a 1. Attempting to do so may cause the
device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was
successful. However, a succeeding read shows that the data is still 0. Only erase operations
can convert a 0 to a 1.
Accelerated Program
The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass
mode. The system may then write the two-cycle Unlock Bypass program command sequence.
The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or
device damage may result. WP# has an internal pullup; when unconnected, WP# is at VIH.
Figure 2, on page 55 illustrates the algorithm for the program operation. Refer to the Erase
and Program Operations subsection of the “AC Characteristics” section on page 77 for parameters, and Figure 14, on page 81 for timing diagrams.
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Write “Write to Buffer”
command and
Sector Address
Part of “Write to Buffer”
Command Sequence
Write number of addresses
to program minus 1(WC)
and Sector Address
Write first address/data
Yes
WC = 0 ?
No
Write to a different
sector address
Abort Write to
Buffer Operation?
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
No
(Note 1)
Write next address/data pair
WC = WC - 1
Write program buffer to
flash sector address
Notes:
1.
Read DQ15 - DQ0 at
Last Loaded Address
2.
3.
Yes
DQ7 = Data?
No
No
No
DQ1 = 1?
DQ5 = 1?
Yes
Yes
4.
When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data,
all addresses must fall within the selected
Write-Buffer Page.
DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
If this flowchart location was reached because
DQ5= 1, then the device FAILED. If this
flowchart location was reached because DQ1= 1,
then the Write to Buffer operation was
ABORTED. In either case, the proper reset
command must be written before the device can
begin another operation. If DQ1=1, write the
Write-Buffer-Programming-Abort-Reset
command. if DQ5=1, write the Reset command.
See Table 12 on page 63 and Table 14 on
page 65 for command sequences required for
write buffer programming.
Read DQ15 - DQ0 with
address = Last Loaded
Address
(Note 2)
Yes
DQ7 = Data?
No
(Note 3)
FAIL or ABORT
Figure 1.
54
PASS
Write Buffer Programming Operation
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START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 12 on page 63 and Table 14 on
page 65 for program command sequence.
Figure 2. Program Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming operation or
a Write to Buffer programming operation so that data can be read from any non-suspended
sector. When the Program Suspend command is written during a programming process, the
device halts the program operation within 15 µs maximum (5 µs typical) and updates the status bits. Addresses are not required when writing the Program Suspend command.
After the programming operation is suspended, the system can read array data from any
non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any
addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured
Silicon Sector area (One-time Program area), then user must use the proper command sequences to enter and exit this region. Note that the Secured Silicon Sector autoselect, and
CFI functions are unavailable when program operation is in progress.
The system may also write the autoselect command sequence when the device is in the Program Suspend mode. The system can read as many autoselect codes as required. When the
device exits the autoselect mode, the device reverts to the Program Suspend mode, and is
ready for another valid operation. See Autoselect Command Sequence‚ on page 51 for more
information.
After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just
S29GL-N_00_B3 October 13, 2006
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as in the standard program operation. See Write Operation Status‚ on page 67 for more
information.
The system must write the Program Resume command (address bits are don’t care) to exit
the Program Suspend mode and continue the programming operation. Further writes of the
Resume command are ignored. Another Program Suspend command can be written after the
device has resume programming.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write address/data
XXXh/B0h
Write Program Suspend
Command Sequence
Command is also valid for
Erase-suspended-program
operations
Wait 15 μs
Read data as
required
No
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Done
reading?
Yes
Write address/data
XXXh/30h
Write Program Resume
Command Sequence
Device reverts to
operation prior to
Program Suspend
Figure 3.
Program Suspend/Program Resume
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are
then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded
Erase algorithm automatically preprograms and verifies the entire memory for an all zero data
pattern prior to electrical erase. The system is not required to provide any controls or timings
during these operations. Table 12 on page 63 and Table 14 on page 65 show the address and
data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, the device returns to the read mode and
addresses are no longer latched. The system can determine the status of the erase operation
by using DQ7, DQ6, or DQ2. Refer to Write Operation Status‚ on page 67 for information on
these status bits.
Any commands written during the chip erase operation are ignored, including erase suspend
commands. However, note that a hardware reset immediately terminates the erase opera-
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tion. If that occurs, the chip erase command sequence should be reinitiated once the device
has returned to reading array data, to ensure data integrity.
Figure 4, on page 58 illustrates the algorithm for the erase operation. Note that the Secured
Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation in is progress. Refer to the table Erase and Program Operations‚ on page 80 for
parameters, and Figure 16, on page 82 section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by
writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are
written, and are then followed by the address of the sector to be erased, and the sector erase
command. Table 12 on page 63 and Table 14 on page 65 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase
algorithm automatically programs and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or timings during
these operations.
After the command sequence is written, a sector erase time-out of 50 µs occurs. During the
time-out period, additional sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any sequence, and the number of sectors may
be from one sector to all sectors. The time between these additional cycles must be less than
50 µs, otherwise erasure may begin. Any sector erase address and command following the
exceeded time-out may or may not be accepted. It is recommended that processor interrupts
be disabled during this time to ensure all commands are accepted. The interrupts can be
re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to the read
mode. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation in is progress. The system must rewrite the
command sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See DQ3:
Sector Erase Timer‚ on page 72.). The time-out begins from the rising edge of the final WE#
pulse in the command sequence.
When the Embedded Erase algorithm is complete, the device returns to reading array data
and addresses are no longer latched. The system can determine the status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector. Refer to the Write Operation
Status section for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All
other commands are ignored. However, note that a hardware reset immediately terminates
the erase operation. If that occurs, the sector erase command sequence should be reinitiated
once the device has returned to reading array data, to ensure data integrity.
Figure 4, on page 58 illustrates the algorithm for the erase operation. Refer to the table Erase
and Program Operations‚ on page 80 for parameters, and Figure 16, on page 82 for timing
diagrams.
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START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1.
See Table 12 on
page 63 and
Table 14 on
page 65 for
program
command
Figure 4.
Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation
and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period
during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device
requires a typical of 5 μs (maximum of 20 μs) to suspend the erase operation. However, when
the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The
system can read data from or program data to any sector not selected for erasure. (The device erase suspends all sectors selected for erasure.) Reading at any address within
erase-suspended sectors produces status information on DQ7–DQ0. The system can use
DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the
erase-suspend-read mode. The system can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the standard word program operation. Refer to
Write Operation Status‚ on page 67 for more information.
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In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode‚ on page 37 section and Autoselect Command
Sequence‚ on page 51 for details.
To resume the sector erase operation, the system must write the Erase Resume command.
The address of the erase-suspended sector is required when writing this command. Further
writes of the Resume command are ignored. Another Erase Suspend command can be written
after the chip has resumed erasing. It is important to allow an interval of at least 5 ms between Erase Resume and Erase Suspend.
Lock Register Command Set Definitions
The Lock Register Command Set permits the user to one-time program the Secured Silicon
Sector Protection Bit, Persistent Protection Mode Lock Bit, and Password Protection Mode Lock
Bit. The Lock Register bits are all readable after an initial access delay.
The Lock Register Command Set Entry command sequence must be issued prior to any
of the following commands listed, to enable proper command execution.
Note that issuing the Lock Register Command Set Entry command disables reads and
writes for the flash memory.
Lock Register Program Command
Lock Register Read Command
The Lock Register Command Set Exit command must be issued after the execution of the
commands to reset the device to read mode. Otherwise the device hangs. If this happens,
the flash device must be reset. Please refer to RESET# for more information. It is important
to note that the device is in either Persistent Protection mode or Password Protection mode
depending on the mode selected prior to the device hang.
For either the Secured Silicon Sector to be locked, or the device to be permanently set to the
Persistent Protection Mode or the Password Protection Mode, the associated Lock Register bits
must be programmed. Note that only the Persistent Protection Mode Lock Bit or the Password
Protection Mode Lock Bit can be programmed. The Lock Register Program operation aborts if
there is an attempt to program both the Persistent Protection Mode and the Password Protection Mode Lock bits.
The Lock Register Command Set Exit command must be initiated to re-enable reads and
writes to the main memory.
Password Protection Command Set Definitions
The Password Protection Command Set permits the user to program the 64-bit password, verify the programming of the 64-bit password, and then later unlock the device by issuing the
valid 64-bit password.
The Password Protection Command Set Entry command sequence must be issued prior
to any of the commands listed following to enable proper command execution.
Note that issuing the Password Protection Command Set Entry command disabled
reads and writes the main memory.
Password Program Command
Password Read Command
Password Unlock Command
The Password Program command permits programming the password that is used as part of
the hardware protection scheme. The actual password is 64-bits long. There is no special addressing order required for programming the password. The password is programmed in
8-bit or 16-bit portions. Each portion requires a Password Program Command.
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Once the Password is written and verified, the Password Protection Mode Lock Bit in the Lock
Register must be programmed in order to prevent verification. The Password Program command is only capable of programming 0s. Programming a 1 after a cell is programmed as a
0 results in a time-out by the Embedded Program AlgorithmTM with the cell remaining as a 0.
The password is all F’s when shipped from the factory. All 64-bit password combinations are
valid as a password.
The Password Read command is used to verify the Password. The Password is verifiable only
when the Password Protection Mode Lock Bit in the Lock Register is not programmed. If the
Password Protection Mode Lock Bit in the Lock Register is programmed and the user attempts
to read the Password, the device always drives all F’s onto the DQ databus.
The lower two address bits (A1–A0) for word mode and (A1–A-1) for by byte mode are valid
during the Password Read, Password Program, and Password Unlock commands. Writing a
1 to any other address bits (AMAX-A2) aborts the Password Read and Password Program commands.
The Password Unlock command is used to clear the PPB Lock Bit to the unfreeze state so that
the PPB bits can be modified. The exact password must be entered in order for the unlocking
function to occur. This 64-bit Password Unlock command sequence takes at least 2 µs to process each time to prevent a hacker from running through the all 64-bit combinations in an
attempt to correctly match the password. If another password unlock is issued before the
64-bit password check execution window is completed, the command is ignored. If the wrong
address or data is given during password unlock command cycle, the device may enter the
write-to-buffer abort state. In order to exit the write-to-abort state, the
write-to-buffer-abort-reset command must be given. Otherwise the device hangs.
The Password Unlock function is accomplished by writing Password Unlock command and data
to the device to perform the clearing of the PPB Lock Bit to the unfreeze state. The password
is 64 bits long. A1 and A0 are used for matching in word mode and A1, A0, A-1 in byte mode.
Writing the Password Unlock command does not need to be address order specific. An example sequence is starting with the lower address A1-A0=00, followed by A1-A0=01, A1-A0=10,
and A1-A0=11 if the device is configured to operate in word mode.
Approximately 2 µs is required for unlocking the device after the valid 64-bit password is
given to the device. It is the responsibility of the microprocessor to keep track of the entering
the portions of the 64-bit password with the Password Unlock command, the order, and when
to read the PPB Lock bit to confirm successful password unlock. In order to re-lock the device
into the Password Protection Mode, the PPB Lock Bit Set command can be re-issued.
Note: The Password Protection Command Set Exit command must be issued after the execution of the commands listed previously to reset the device to read mode. Otherwise the
device hangs.
Note: Issuing the Password Protection Command Set Exit command re-enables reads and
writes for the main memory.
Non-Volatile Sector Protection Command Set Definitions
The Non-Volatile Sector Protection Command Set permits the user to program the Persistent
Protection Bits (PPB bits), erase all of the Persistent Protection Bits (PPB bits), and read the
logic state of the Persistent Protection Bits (PPB bits).
The Non-Volatile Sector Protection Command Set Entry command sequence must be issued prior to any of the commands listed following to enable proper command execution.
Note that issuing the Non-Volatile Sector Protection Command Set Entry command disables reads and writes for the main memory.
PPB Program Command
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The PPB Program command is used to program, or set, a given PPB bit. Each PPB bit is individually programmed (but is bulk erased with the other PPB bits). The specific sector address
(A24-A16 for S29GL512N, A23-A16 for S29GL256N, A22-A16 for S29GL128N) is written at
the same time as the program command. If the PPB Lock Bit is set to the freeze state, the
PPB Program command does not execute and the command times-out without programming
the PPB bit.
All PPB Erase Command
The All PPB Erase command is used to erase all PPB bits in bulk. There is no means for individually erasing a specific PPB bit. Unlike the PPB program, no specific sector address is
required. However, when the All PPB Erase command is issued, all Sector PPB bits are erased
in parallel. If the PPB Lock Bit is set to freeze state, the ALL PPB Erase command does not
execute and the command times-out without erasing the PPB bits.
The device preprograms all PPB bits prior to erasing when issuing the All PPB Erase command.
Also note that the total number of PPB program/erase cycles has the same endurance as the
flash memory array.
PPB Status Read Command
The programming state of the PPB for a given sector can be verified by writing a PPB Status
Read Command to the device. This requires an initial access time latency.
The Non-Volatile Sector Protection Command Set Exit command must be issued after
the execution of the commands listed previously to reset the device to read mode.
Note that issuing the Non-Volatile Sector Protection Command Set Exit command
re-enables reads and writes for the main memory.
Global Volatile Sector Protection Freeze Command Set
The Global Volatile Sector Protection Freeze Command Set permits the user to set the PPB
Lock Bit and reading the logic state of the PPB Lock Bit.
The Global Volatile Sector Protection Freeze Command Set Entry command sequence
must be issued prior to any of the commands listed following to enable proper command
execution.
Reads and writes from the main memory are not allowed.
PPB Lock Bit Set Command
The PPB Lock Bit Set command is used to set the PPB Lock Bit to the freeze state if it is cleared
either at reset or if the Password Unlock command was successfully executed. There is no PPB
Lock Bit Clear command. Once the PPB Lock Bit is set to the freeze state, it cannot be cleared
unless the device is taken through a power-on clear (for Persistent Protection Mode) or the
Password Unlock command is executed (for Password Protection Mode). If the Password Protection Mode Lock Bit is programmed, the PPB Lock Bit status is reflected as set to the freeze
state, even after a power-on reset cycle.
PPB Lock Bit Status Read Command
The programming state of the PPB Lock Bit can be verified by executing a PPB Lock Bit Status
Read command to the device.
The Global Volatile Sector Protection Freeze Command Set Exit command must be issued after the execution of the commands listed previously to reset the device to read mode.
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Volatile Sector Protection Command Set
The Volatile Sector Protection Command Set permits the user to set the Dynamic Protection
Bit (DYB) to the protected state, clear the Dynamic Protection Bit (DYB) to the unprotected
state, and read the logic state of the Dynamic Protection Bit (DYB).
The Volatile Sector Protection Command Set Entry command sequence must be issued
prior to any of the commands listed following to enable proper command execution.
Note that issuing the Volatile Sector Protection Command Set Entry command disables
reads and writes from main memory.
DYB Set Command
DYB Clear Command
The DYB Set and DYB Clear commands are used to protect or unprotect a given sector. The
high order address bits are issued at the same time as the code 00h or 01h on DQ7-DQ0. All
other DQ data bus pins are ignored during the data write cycle. The DYB bits are modifiable
at any time, regardless of the state of the PPB bit or PPB Lock Bit. The DYB bits are cleared
to the unprotected state at power-up or hardware reset.
DYB Status Read Command
The programming state of the DYB bit for a given sector can be verified by writing a DYB Status Read command to the device. This requires an initial access delay.
The Volatile Sector Protection Command Set Exit command must be issued after the execution of the commands listed previously to reset the device to read mode.
Note that issuing the Volatile Sector Protection Command Set Exit command re-enables reads and writes to the main memory.
Secured Silicon Sector Entry Command
The Secured Silicon Sector Entry command allows the following commands to be executed
Read from Secured Silicon Sector
Program to Secured Silicon Sector
Once the Secured Silicon Sector Entry Command is issued, the Secured Silicon Sector Exit
command has to be issued to exit Secured Silicon Sector Mode.
Secured Silicon Sector Exit Command
The Secured Silicon Sector Exit command may be issued to exit the Secured Silicon Sector
Mode.
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Command Definitions
Secured
Silicon
Sector
Unlock
Bypass
Mode
Autoselect
Command Sequence
(Notes)
Asynchronous Read (6)
Reset (7)
Manufacturer ID
Device ID (8)
Sector Protect Verify (9)
Secure Device Verify (10)
CFI Query (11)
Program
Write to Buffer (12)
Program Buffer to Flash
Write to Buffer Abort Reset (13)
Entry
Program (14)
Sector Erase (14)
Chip Erase (14)
Reset
Chip Erase
Sector Erase
Erase/Program Suspend (15)
Erase/Program Resume (16)
Entry
Program (17)
Read (17)
Exit (17)
Cycles
Table 12.
1
1
4
6
4
4
1
4
6
1
3
3
2
2
2
2
6
6
1
1
3
4
1
4
Memory Array Commands (x16)
First
Addr
Data
RA
RD
XXX
F0
555
AA
555
AA
555
AA
555
AA
55
98
555
AA
555
AA
SA
29
555
AA
555
AA
XXX
A0
XXX
80
XXX
80
XXX
90
555
AA
555
AA
XXX
B0
XXX
30
555
AA
555
AA
00
Data
555
AA
Second
Addr
Data
2AA
2AA
2AA
2AA
55
55
55
55
555
555
555
555
90
90
90
90
X00
X01
[SA]X02
X03
01
227E
Data
Data
2AA
2AA
55
55
555
PA
A0
25
PA
SA
2AA
2AA
PA
SA
SA
XXX
2AA
2AA
55
55
PD
30
10
00
55
55
555
555
F0
20
555
555
80
80
2AA
2AA
55
55
555
555
2AA
55
555
Legend:
X = Don’t care.
RA = Read Address.
RD = Read Data.
PA = Program Address. Addresses latch on the falling edge of WE#
or CE# pulse, whichever occurs later.
Notes:
1. See Table 1 on page 13 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles.
4. Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
5. Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return reading
array data.
6. No unlock or command cycles required when bank is reading
array data.
7. Reset command is required to return to reading array data in
certain cases. See Reset Command section for details.
8. Data in cycles 5 and 6 are listed in Table 5 on page 37.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. PPB Status Read provides the same data but in
inverted form.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 =
0, region is unserialized and unprotected when shipped from
factory. See Secured Silicon Sector Flash Memory Region on
page 43 for more information.
S29GL-N_00_B3 October 13, 2006
Bus Cycles (Notes 1–5)
Third
Fourth
Addr
Data
Addr
Data
Fifth
Addr
Data
Sixth
Addr
Data
X0E
Data
X0F
Data
PD
WC
PA
PD
WBL
PD
555
555
AA
AA
2AA
2AA
55
55
555
SA
10
30
88
A0
PA
PD
90
XXX
00
PD = Program Data. Data latches on the rising edge of WE# or CE#
pulse, whichever occurs first.
SA = Sector Address. Any address that falls within a specified sector.
See Tables 2–4 for sector address ranges.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
11. Command is valid when device is ready to read array data or
when device is in autoselect mode.
12. Total number of cycles in the command sequence is determined
by the number of words written to the write buffer.
13. Command sequence resets device for next command after
write-to-buffer operation.
14. Requires Entry command sequence prior to execution. Unlock
Bypass Reset command is required to return to reading array
data.
15. System may read and program in non-erasing sectors, or enter
the autoselect mode, when in the Erase Suspend mode. The
Erase Suspend command is valid only during a sector erase
operation.
16. Erase Resume command is valid only during the Erase Suspend
mode.
17. Requires Entry command sequence prior to execution. Secured
Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
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Command Sequence
(Notes)
Command Set Entry (5)
Lock
Program (6)
Register
Read (6)
Bits
Command Set Exit (7)
Command Set Entry (5)
Program (8)
Password
Read (9)
Protection
Unlock (10)
Command Set Exit (7)
Command Set Entry (5)
PPB Program (11)
Non-Volatile
Sector
All PPB Erase (11, 12)
Protection (PPB) PPB Status Read
Command Set Exit (7)
Global
Command Set Entry (5)
Volatile Sector PPB Lock Bit Set
Protection
PPB Lock Bit Status Read
Freeze
Command Set Exit (7)
(PPB Lock)
Volatile Sector
Protection
(DYB)
Command Set Entry (5)
DYB Set
DYB Clear
DYB Status Read
Command Set Exit (7)
Cycles
Table 13.
3
2
1
2
3
2
4
7
2
3
2
2
1
2
3
2
1
Sector Protection Commands (x16)
First
Addr Data
555
AA
XX
A0
00
Data
XX
90
555
AA
XX
A0
XXX PWD0
00
25
XX
90
555
AA
XX
A0
XX
80
SA
RD(0)
XX
90
555
AA
XX
A0
XXX RD(0)
Bus Cycles (Notes 1–4)
Third
Fourth
Fifth
Addr
Data Addr Data Addr Data
555
40
Second
Addr
Data
2AA
55
XXX
Data
XX
2AA
PWAx
01
00
XX
2AA
SA
00
00
55
PWDx
PWD1
03
00
55
00
30
XX
2AA
XX
00
55
00
2
XX
90
XX
00
3
2
2
1
2
555
XX
XX
SA
XX
AA
A0
A0
RD(0)
90
2AA
SA
SA
55
00
01
XX
00
Legend:
X = Don’t care.
RA = Address of the memory location to be read.
SA = Sector Address. Any address that falls within a specified sector.
See Tables 2–4 for sector address ranges.
Notes:
1. All values are in hexadecimal.
2. Shaded cells indicate read cycles.
3. Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
4. Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return the device
to reading array data.
5. Entry commands are required to enter a specific mode to enable
instructions only available within that mode.
64
S h e e t
555
60
02
00
PWD2
PWD0
555
C0
555
50
555
E0
03
01
PWD3
PWD1
02
PWD2
Sixth
Addr Data
03
PWD3
Seventh
Addr Data
00
29
PWA = Password Address. Address bits A1 and A0 are used to select
each 16-bit portion of the 64-bit entity.
PWD = Password Data.
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If
unprotected, DQ0 = 1.
6.
7.
No unlock or command cycles required when bank is reading
array data.
Exit command must be issued to reset the device into read
mode; device may otherwise be placed in an unknown state.
8.
Entire two bus-cycle sequence must be entered for each portion
of the password.
9. Full address range is required for reading password.
10. Password may be unlocked or read in any order. Unlocking
requires the full password (all seven cycles).
11. ACC must be at VIH when setting PPB or DYB.
12. “All PPB Erase” command pre-programs all PPBs before erasure
to prevent over-erasure.
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Secured
Silicon
Sector
Unlock
Bypass
Mode
Autoselect
Command Sequence
(Notes)
Asynchronous Read (6)
Reset (7)
Manufacturer ID
Device ID (8)
Sector Protect Verify (9)
Secure Device Verify (10)
CFI Query (11)
Program
Write to Buffer (12)
Program Buffer to Flash
Write to Buffer Abort Reset (13)
Entry
Program (14)
Sector Erase (14)
Chip Erase (14)
Reset
Chip Erase
Sector Erase
Erase/Program Suspend (15)
Erase/Program Resume (16)
Entry
Program (17)
Read (17)
Exit (17)
Cycles
Table 14.
1
1
4
6
4
4
1
4
6
1
3
3
2
2
2
2
6
6
1
1
3
4
1
4
S h e e t
Memory Array Commands (x8)
First
Addr
Data
RA
RD
XXX
F0
AAA
AA
AAA
AA
AAA
AA
AAA
AA
AA
98
AAA
AA
AAA
AA
SA
29
AAA
AA
AAA
AA
XXX
A0
XXX
80
XXX
80
XXX
90
AAA
AA
AAA
AA
XXX
B0
XXX
30
AAA
AA
AAA
AA
00
Data
AAA
AA
Second
Addr
Data
Fifth
Addr
Data
Sixth
Addr
Data
X1C
Data
X1E
Data
555
555
555
555
55
55
55
55
AAA
AAA
AAA
AAA
90
90
90
90
X00
X02
[SA]X04
X06
01
XX7E
Data
Data
555
555
55
55
AAA
PA
A0
25
PA
SA
PD
WC
PA
PD
WBL
PD
PA
555
PA
SA
SA
XXX
555
555
55
55
PD
30
10
00
55
55
555
AAA
F0
20
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
SA
10
30
555
555
55
55
AAA
AAA
88
A0
PA
PD
555
55
AAA
90
XXX
00
Legend:
X = Don’t care.
RA = Read Address.
RD = Read Data.
PA = Program Address. Addresses latch on the falling edge of WE#
or CE# pulse, whichever occurs later.
Notes:
1. See Table 1 on page 13 for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles.
4. Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
5. Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return reading
array data.
6. No unlock or command cycles required when bank is reading
array data.
7. Reset command is required to return to reading array data in
certain cases. See Reset Command section for details.
8. Data in cycles 5 and 6 are listed in Table 5 on page 37.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. PPB Status Read provides the same data but in
inverted form.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 =
0, region is unserialized and unprotected when shipped from
factory. See Secured Silicon Sector Flash Memory Region on
page 43 for more information.
S29GL-N_00_B3 October 13, 2006
Bus Cycles (Notes 1–5)
Third
Fourth
Addr
Data
Addr
Data
PD = Program Data. Data latches on the rising edge of WE# or CE#
pulse, whichever occurs first.
SA = Sector Address. Any address that falls within a specified sector.
See Tables 2–4 for sector address ranges.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
11. Command is valid when device is ready to read array data or
when device is in autoselect mode.
12. Total number of cycles in the command sequence is determined
by the number of words written to the write buffer.
13. Command sequence resets device for next command after
write-to-buffer operation.
14. Requires Entry command sequence prior to execution. Unlock
Bypass Reset command is required to return to reading array
data.
15. System may read and program in non-erasing sectors, or enter
the autoselect mode, when in the Erase Suspend mode. The
Erase Suspend command is valid only during a sector erase
operation.
16. Erase Resume command is valid only during the Erase Suspend
mode.
17. Requires Entry command sequence prior to execution. Secured
Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
S29GL-N MirrorBit™ Flash Family
65
D a t a
Command Sequence
(Notes)
Command Set Entry (5)
Lock
Program (6)
Register
Read (6)
Bits
Command Set Exit (7)
Command Set Entry (5)
Program (8)
Password
Protection
3
2
1
2
3
2
Read (9)
8
Unlock (10)
11
Command Set Exit (7)
Command Set Entry (5)
PPB Program (11)
Non-Volatile
Sector
All PPB Erase (11, 12)
Protection (PPB) PPB Status Read
Command Set Exit (7)
Global
Command Set Entry (5)
Volatile Sector PPB Lock Bit Set
Protection
PPB Lock Bit Status Read
Freeze
Command Set Exit (7)
(PPB Lock)
Volatile Sector
Protection
(DYB)
Cycles
Table 15.
Command Set Entry (5)
DYB Set
DYB Clear
DYB Status Read
Command Set Exit (7)
2
3
2
2
1
2
3
2
1
Sector Protection Commands (x8)
1st/8th
Addr Data
AAA
AA
XXX
A0
00
Data
XXX
90
AAA
AA
XXX
A0
00
PWD0
07
PWD7
00
25
05
PWD5
XX
90
AAA
AA
XXX
A0
XXX
80
SA
RD(0)
XXX
90
AAA
AA
XXX
A0
XXX RD(0)
2nd/9th
Addr
Data
555
55
XXX
Data
XXX
555
PWAx
01
00
55
PWDx
PWD1
00
06
XX
555
SA
00
03
PWD6
00
55
00
30
XXX
555
XXX
00
55
00
2
XXX
90
XX
00
3
2
2
1
2
AAA
XXX
XXX
SA
XXX
AA
A0
A0
RD(0)
90
555
SA
SA
55
00
01
XXX
00
Legend:
X = Don’t care.
RA = Address of the memory location to be read.
SA = Sector Address. Any address that falls within a specified sector.
See Tables 2–4 for sector address ranges.
Notes:
1. All values are in hexadecimal.
2. Shaded cells indicate read cycles.
3. Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
4. Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return the device
to reading array data.
5. Entry commands are required to enter a specific mode to enable
instructions only available within that mode.
66
S h e e t
Bus Cycles (Notes 1–4)
3rd/10th
4th/11th
5th
Addr
Data Addr Data Addr Data
AAA
40
6th
Addr Data
7th
Addr Data
AAA
60
02
PWD2
03
PWD3
04
PWD4
05
PWD5
06
PWD6
00
07
PWD0
PWD7
01
00
PWD1
29
02
PWD2
03
PWD3
04
PWD4
AAA
C0
AAA
50
AAA
E0
PWA = Password Address. Address bits A1 and A0 are used to select
each 16-bit portion of the 64-bit entity.
PWD = Password Data.
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If
unprotected, DQ0 = 1.
6.
7.
No unlock or command cycles required when bank is reading
array data.
Exit command must be issued to reset the device into read
mode; device may otherwise be placed in an unknown state.
8.
Entire two bus-cycle sequence must be entered for each portion
of the password.
9. Full address range is required for reading password.
10. Password may be unlocked or read in any order. Unlocking
requires the full password (all seven cycles).
11. ACC must be at VIH when setting PPB or DYB.
12. “All PPB Erase” command pre-programs all PPBs before erasure
to prevent over-erasure.
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Write Operation Status
The device provides several bits to determine the status of a program or erase operation:
DQ2, DQ3, DQ5, DQ6, and DQ7. Table 16 on page 72 and the following subsections describe
the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a
hardware-based output signal, RY/BY#, to determine whether an Embedded Program or
Erase operation is in progress or is completed.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or
Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data#
Polling is valid after the rising edge of the final WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the
datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum
programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7
is active for approximately 1 µs, then the device returns to the read mode.
During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data#
Polling produces a 1 on DQ7. The system must provide an address within any of the sectors
selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected,
Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to the read
mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system
reads DQ7 at an address within a protected sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change
asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device
may change from providing status information to valid data on DQ7. Depending on when the
system samples the DQ7 output, it may read the status or valid data. Even if the device has
completed the program or erase operation and DQ7 has valid data, the data outputs on DQ0–
DQ6 may be still invalid. Valid data on DQ0–DQ7 appears on successive read cycles.
Table 16 on page 72 shows the outputs for Data# Polling on DQ7. Figure 5, on page 68 shows
the Data# Polling algorithm. Figure 14, on page 81 shows the Data# Polling timing diagram.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
67
D a t a
S h e e t
START
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1
Yes
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid
address is any sector address within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
Figure 5. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final
WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY#
pins can be tied together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read
mode, the standby mode, or in the erase-suspend-read mode. Table 16 on page 72 shows
the outputs for RY/BY#.
68
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress
or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may
be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase
time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles.
When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected,
DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing
or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6
stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7:
Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after
the program command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete.
Table 16 on page 72 shows the outputs for Toggle Bit I on DQ6. Figure 6, on page 70 shows
the toggle bit algorithm. Figure 18, on page 84 shows the toggle bit timing diagrams. Figure
19, on page 84 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
69
D a t a
S h e e t
START
Read DQ7–DQ0
Read DQ7–DQ0
Toggle Bit
= Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note:
The system should recheck the toggle bit even if DQ5 = 1
because the toggle bit may stop toggling as DQ5 changes to
1. See the subsections on DQ6 and DQ2 for more
information.
Figure 6.
70
Toggle Bit Algorithm
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
DQ2: Toggle Bit II
The Toggle Bit II on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector
is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the
command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the
read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is
erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is
in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both
status bits are required for sector and mode information. Refer to Table 16 on page 72 to
compare outputs for DQ2 and DQ6.
Figure 6, on page 70 shows the toggle bit algorithm in flowchart form, and the section DQ2:
Toggle Bit II explains the algorithm. See also the RY/BY#: Ready/Busy# subsection. Figure
18, on page 84 shows the toggle bit timing diagram. Figure 19, on page 84 shows the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6, on page 70 and Figure 19, on page 84 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice
in a row to determine whether a toggle bit is toggling. Typically, the system would note and
store the value of the toggle bit after the first read. After the second read, the system would
compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the
device has completed the program or erase operation. The system can read array data on
DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still
toggling, the system also should note whether the value of DQ5 is high (see the section on
DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the program or erase operation. If it is still
toggling, the device did not completed the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling
and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5
through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system
must start at the beginning of the algorithm when it returns to determine the status of the
operation (top of Figure 6, on page 70).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program, erase, or write-to-buffer time has exceeded a specified
internal pulse count limit. Under these conditions DQ5 produces a 1, indicating that the program or erase cycle was not successfully completed.
The device may output a 1 on DQ5 if the system tries to program a 1 to a location that was
previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under
this condition, the device halts the operation, and when the timing limit is exceeded, DQ5 produces a 1.
In all these cases, the system must write the reset command to return the device to the reading the a rray (or to eras e-suspend-read i f the device was pre v iously in the
erase-suspend-program mode).
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
71
D a t a
S h e e t
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine
whether or not erasure has begun. (The sector erase timer does not apply to the chip erase
command.) If additional sectors are selected for erasure, the entire time-out also applies after
each additional sector erase command. When the time-out period is complete, DQ3 switches
from a 0 to a 1. If the time between additional sector erase commands from the system can
be assumed to be less than 50 µs, the system need not monitor DQ3. See also Sector Erase
Command Sequence‚ on page 57.
After the sector erase command is written, the system should read the status of DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence,
and then read DQ3. If DQ3 is 1, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is 0,
the device accepts additional sector erase commands. To ensure the command is accepted,
the system software should check the status of DQ3 prior to and following each subsequent
sector erase command. If DQ3 is high on the second status check, the last command might
not have been accepted.
Table 16 on page 72 shows the status of DQ3 relative to the other status bits.
DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1
produces a 1. The system must issue the Write-to-Buffer-Abort-Reset command sequence to
return the device to reading array data. See Write Buffer‚ on page 14 for more details.
Table 16. Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ1
RY/BY#
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
N/A
0
Status
Standard
Mode
Program
Suspend
Mode
Erase
Suspend
Mode
Write-toBuffer
ProgramSuspend
Read
EraseSuspend
Read
Program-Suspended
Sector
Invalid (not allowed)
1
Data
1
Non-Program
Suspended Sector
Erase-Suspended
Sector
1
No toggle
0
Non-Erase
Suspended Sector
N/A
Toggle
N/A
Data
1
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Busy (Note 3)
DQ7#
Toggle
0
N/A
N/A
0
0
Abort (Note 4)
DQ7#
Toggle
0
N/A
N/A
1
0
Notes:
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation
72
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Absolute Maximum Ratings
Storage Temperature, Plastic Packages . . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground:
VCC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and ACC (Note 2) . . . . . . . . . . . . . . . . . . . –0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . .–0.5 V to VCC + 0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . . . . . . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs
or I/Os may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 7, on
page 73. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage
transitions, input or I/O pins may overshoot to VCC + 2.0 V for periods up to 20
ns. See Figure 8, on page 73.
2. Minimum DC input voltage on pins A9, OE#, and ACC is –0.5 V. During voltage
transitions, A9, OE#, and ACC may overshoot VSS to –2.0 V for periods of up to
20 ns. See Figure 7, on page 73. Maximum DC input voltage on pin A9, OE#, and
ACC is +12.5 V which may overshoot to +14.0V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short
circuit should not be greater than one second.
4. Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to
absolute maximum rating conditions for extended periods may affect device
reliability.
20 ns
20 ns
20 ns
VCC
+2.0 V
VCC
+0.5 V
+0.8 V
–0.5 V
–2.0 V
2.0 V
20 ns
Figure 7.
20 ns
Maximum Negative Overshoot Waveform
Figure 8.
20 ns
Maximum Positive Overshoot Waveform
Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Supply Voltages
VCC
. . . . . . . . . . . . . . . . . . . . . . . . . +2.7 V to +3.6 V or +3.0 V to 3.6 V
VIO (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.65 V to 1.95 V or VCC
Notes:
1. Operating ranges define those limits between which the functionality of the device
is guaranteed.
2.
See Product Selector Guide‚ on page 6.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
73
D a t a
S h e e t
DC Characteristics
CMOS Compatible
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
ILI
Input Load Current (1)
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
ICC2
VCC Active Read Current (1)
VCC Intra-Page Read Current (1)
Min
Typ
Max
WP/ACC: ±2.0
Others: ±1.0
Unit
µA
35
µA
±1.0
µA
CE# = VIL; OE# = VIH, VCC = VCCmax;
f = 1 MHz, Byte Mode
6
20
CE# = VIL; OE# = VIH, VCC = VCCmax;
f = 5 MHz, Word Mode
30
50
CE# = VIL; OE# = VIH, VCC = VCCmax;
f = 10 MHz
60
90
CE# = VIL; OE# = VIH, VCC = VCCmax;
f = 10 MHz
1
10
CE# = VIL, OE# = VIH, VCC = VCCmax;
f=33 MHz
5
20
50
90
mA
mA
mA
ICC3
VCC Active Erase/Program Current (2, 3) CE# = VIL, OE# = VIH, VCC = VCCmax
ICC4
VCC Standby Current
VCC = VCCmax; VIO = VCC; OE# = VIH;
VIL = VSS + 0.3 V / –0.1 V;
CE#, RESET# = VCC ± 0.3 V
1
5
µA
ICC5
VCC Reset Current
VCC = VCCmax; VIO = VCC;
VIL = VSS + 0.3 V / –0.1 V;
RESET# = VSS ± 0.3 V
1
5
µA
ICC6
Automatic Sleep Mode (4)
VCC = VCCmax; VIO = VCC;
VIH = VCC ± 0.3 V;
VIL = VSS + 0.3 V / –0.1 V;
WP#/ACC = VIH
1
5
µA
IACC
ACC Accelerated Program Current
CE# = VIL, OE# = VIH, VCC = VCCmax,
WP#/ACC = VIH
WP#/ACC
pin
10
20
VCC pin
50
90
mA
VIL
Input Low Voltage (5)
–0.1
0.3 x VIO
V
VIH
Input High Voltage (5)
0.7 x VIO
VIO + 0.3
V
VHH
Voltage for ACC Erase/Program
Acceleration
VCC = 2.7–3.6 V
11.5
12.5
V
VID
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 2.7–3.6 V
11.5
12.5
V
VOL
Output Low Voltage (5)
IOL = 100 µA
0.15 x VIO
V
VOH
Output High Voltage (5)
IOH = -100 µA
VLKO
Low VCC Lock-Out Voltage (3)
0.85 x VIO
2.3
V
2.5
V
Notes:
1.
2.
3.
4.
5.
6.
74
The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
Not 100% tested.
Automatic sleep mode enables the lower power mode when addresses remain stable tor tACC + 30 ns.
VIO = 1.65–1.95 V or 2.7–3.6 V
VCC = 3 V and VIO = 3V or 1.8V. When VIO is at 1.8V, I/O pins cannot operate at 3V.
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Test Conditions
3.3 V
2.7 kΩ
Device
Under
Test
CL
6.2 kΩ
Note: Diodes are IN3064 or equivalent
Figure 9.
Table 17.
Test Setup
Test Specifications
Test Condition
All Speeds
Output Load
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–VIO
V
Input timing measurement reference levels (See
Note)
0.5VIO
V
Output timing measurement reference levels
0.5 VIO
V
Note: If VIO < VCC, the reference level is 0.5 VIO.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
75
D a t a
S h e e t
Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
VIO
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
0.5 VIO
Measurement Level
0.5 VIO V
Output
0.0 V
Note: If VIO < VCC, the input measurement reference level is 0.5 VIO.
Figure 10. Input Waveforms and
Measurement Levels
76
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
AC Characteristics
Read-Only Operations
Parameter
Speed Options
Description
Test Setup
JEDEC
Std.
tAVAV
tRC
Read Cycle Time
tAVQV
tACC
Address to Output Delay (Note 2)
tELQV
tCE
tPACC
VIO = VCC = 3 V
VIO = 1.8 V, VCC = 3 V
Chip Enable to Output Delay (Note 3)
VIO = VCC = 3 V
VIO = 1.8 V, VCC = 3 V
VIO = VCC = 3 V
VIO = 1.8 V, VCC = 3 V
Min
Max
Max
90
(Note 6)
100
110
90
100
110
110
110
90
100
110
110
90
100
110
110
Unit
ns
ns
ns
Page Access Time
Max
25
25
25
30
ns
25
25
35
35
ns
tGLQV
tOE
Output Enable to Output Delay
Max
tEHQZ
tDF
Chip Enable to Output High Z (Note 1)
Max
20
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
20
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
tOEH
Toggle and
Data# Polling
Min
10
ns
tCEH
Chip Enable Hold Time
Read
Min
35
ns
Notes:
1.
2.
3.
4.
5.
Not 100% tested.
CE#, OE# = VIL
OE# = VIL
See Figure 9, on page 75 and Table 17 on page 75 for test specifications.
Unless otherwise indicated, AC specifications for 90 ns, 100 ns, and 110 ns speed options are tested with VIO = VCC = 3 V. AC specifications
for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
6.
90 ns speed option only applicable to S29GL128N and S29GL256N.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
77
D a t a
S h e e t
AC Characteristics
tRC
Addresses Stable
Addresses
tACC
CE#
tCEH
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 11.
Same Page
Amax-A2
A2-A0*
Aa
tACC
Data Bus
Read Operation Timings
Ab
Qa
Ad
Ac
tPACC
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
* Figure shows word mode. Addresses are A2–A-1 for byte mode.
Figure 12. Page Read Timings
78
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
AC Characteristics
Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
Speed (Note 2)
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (Note 1)
Max
20
ns
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (Note 1)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (Note 1)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Notes:
1.
2.
Not 100% tested. If ramp rate is equal to or faster than 1V/100µs with a falling edge of the RESET# pin initiated, the RESET# pin needs to
be held low only for 100µs for power-up.
Next generation devices may have different reset speeds. To increase system design considerations, please refer to the “Advance
Information on S29GL-P Hardware Reset (RESET#) and Power-up Sequence” section for advance reset speeds on S29GL-P devices.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
tRH
Figure 13.
S29GL-N_00_B3 October 13, 2006
Reset Timings
S29GL-N MirrorBit™ Flash Family
79
D a t a
S h e e t
AC Characteristics
Erase and Program Operations
Parameter
Speed Options
100
110
110
Unit
90
100
110
110
ns
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
15
µs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation
(Note 2)
Word
Typ
54
µs
tWLAX
tWHWH1
tWHWH2
tWHWH1
Description
90
(Note 6)
JEDEC
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tBUSY
Erase/Program Valid to RY/BY# Delay
Max
90
ns
Notes:
1.
2.
3.
4.
5.
6.
80
Not 100% tested.
See the Erase And Programming Performance‚ on page 87 for more information.
For 1–16 words/1–32 bytes programmed.
Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
Unless otherwise indicated, AC specifications for 90 ns, 100 ns, and 110 ns speed options are tested with VIO = VCC = 3 V. AC specifications
for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
90 ns speed option only applicable to S29GL128N and S29GL256N.
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
AC Characteristics
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 14.
Program Operation Timings
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
tVHH
Notes:
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 9, on page 75 and Table 17 on page 75 for test specifications.
Figure 15. Accelerated Program Timing Diagram
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
81
D a t a
S h e e t
AC Characteristics
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status‚ on
page 67).
2. These waveforms are for the word mode.
Figure 16.
82
Chip/Sector Erase Operation Timings
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
AC Characteristics
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
Status Data
Status Data
True
Valid Data
High Z
DQ6–DQ0
True
Valid Data
tBUSY
RY/BY#
Note:
1.
2.
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
tOE for data polling is 45 ns when VIO = 1.65 to 2.7 V and is 35 ns when VIO = 2.7 to 3.6 V
Figure 17. Data# Polling Timings
(During Embedded Algorithms)
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
83
D a t a
S h e e t
AC Characteristics
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ2 and DQ6
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command
sequence, last status read cycle, and array data read cycle
Figure 18.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Resume
Erase
Erase Suspend
Suspend
Read
Program
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE#
or CE# to toggle DQ2 and DQ6.
Figure 19.
84
DQ2 vs. DQ6
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
AC Characteristics
Alternate CE# Controlled Erase and Program OperationsS29GL128N, S29GL256N, S29GL512N
Parameter
Speed Options
100
110
110
Unit
90
100
110
110
ns
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during
toggle bit polling
Min
0
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
15
µs
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming
Operation (Note 2)
Word
Typ
54
µs
Typ
0.5
sec
TASO
tELAX
tWHWH1 tWHWH1
Description
90
(Note 6)
JEDEC
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
Notes:
1. Not 100% tested.
2. See AC Characteristics‚ on page 77 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with VIO = VCC
= 3 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
85
D a t a
S h e e t
AC Characteristics
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
CE#
tWS
tWHWH1 or 2
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1.
Figure indicates last two bus cycles of a program or erase operation.
2.
PA = program address, SA = sector address, PD = program data.
3.
DQ7# is the complement of the data written to the device. DOUT is the data
written to the device.
Figure 20.
86
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Erase And Programming Performance
Typ
(Note 1)
Max
(Note 2)
Unit
0.5
3.5
sec
S29GL128N
64
256
S29GL256N
128
512
S29GL512N
256
1024
Parameter
Sector Erase Time
Chip Erase Time
240
µs
Total Accelerated Effective
Write Buffer Programming
Time (Note 3)
200
µs
S29GL128N
123
S29GL256N
246
S29GL512N
492
Excludes 00h
programming prior to
erasure (Note 5)
sec
Total Write Buffer
Programming Time
(Note 3)
Chip Program Time
(Note 4)
Comments
Excludes system level
overhead (Note 6)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 10,000 cycles, checkerboard
pattern.
2. Under worst case conditions of 90°C, VCC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 16-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
words program faster than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 12 on page 63 and Table 14 on page 65 for further information on command definitions.
TSOP Pin and BGA Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
CIN
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
CIN2
Control Pin Capacitance
VIN = 0
Typ
Max
Unit
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
87
D a t a
S h e e t
Physical Dimensions
TS056—56-Pin Standard Thin Small Outline Package (TSOP)
PACKAGE
JEDEC
SYMBOL
MO-142 (B) EC
MIN.
NOM.
MAX.
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
A
---
---
1.20
2
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
A1
0.05
---
0.15
3
A2
0.95
1.00
1.05
b1
0.17
0.20
0.23
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
b
c1
0.17
0.10
0.22
---
0.27
0.16
4
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
MOLD PROTUSION IS 0.15 mm PER SIDE.
5
c
0.10
---
0.21
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
6
THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10 mm AND 0.25 mm FROM THE LEAD TIP.
7
LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
8
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
E
13.90
14.00
14.10
e
L
0.50 BASIC
0.50
0.60
0.70
O
0˚
-
8˚
R
0.08
---
0.20
N
88
NOTES:
TS 56
56
3160\38.10A
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
S h e e t
Physical Dimensions
LAA064—64-Ball Fortified Ball Grid Array (FBGA)
DIRECTION
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
89
D a t a
S h e e t
Advance Information on S29GL-P Hardware Reset (RESET#)
and Power-up Sequence
Table 18.
Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
Speed
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode or Write mode
Min
35
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode or Write mode
Min
35
µs
tRP
RESET# Pulse Width
Min
35
µs
tRH
Reset High Time Before Read
Min
200
ns
tRPD
RESET# Low to Standby Mode
Min
10
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: CE#, OE# and WE# must be at logic high during Reset Time.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
tRH
Figure 21.
90
Reset Timings
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a
Table 19.
S h e e t
Power-Up Sequence Timings
Parameter
Description
Speed
Unit
tVCS
Reset Low Time from Rising Edge of VCC (or last Reset pulse) to Rising Edge
of RESET#
Min
35
µs
tVIOS
Reset Low Time from Rising Edge of VIO (or last Reset pulse) to Rising Edge
of RESET#
Min
35
µs
Reset High Time Before Read
Max
200
ns
tRH
Notes:
1.
VIO < VCC + 200 mV.
2.
VIO and VCC ramp must be in sync during power up. If RESET# is not stable for 35 µs, the following conditions may occur: the device does
not permit any read and write operations, valid read operations return FFh, and a hardware reset is required.
3.
Maximum VCC power up current is 20 mA (RESET# =VIL).
VCC
VIO
Vcc_min
Vio_min
t RH
CE#
t VIOS
t VCS
RESET#
Figure 22.
S29GL-N_00_B3 October 13, 2006
Power-On Reset Timings
S29GL-N MirrorBit™ Flash Family
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Revision Summary
Revision A (September 2, 2003)
Initial Release.
Revision A1 (October 16, 2003)
Global
Added LAA064 package.
Distinctive Characteristics, Performance Characteristics
Clarified fifth bullet information.
Added RTSOP to Package Options.
Distinctive Characteristics, Software and Hardware Features
Clarified Password Sector Protection to Advanced Sector Protection
Connection Diagrams
Removed Note.
Ordering Information
Modified Package codes
Device Bus Operations, Table 1
Modified Table, removed Note.
Sector Address Tables
All address ranges doubled in all sector address tables.
Sector Protection
Lock Register: Corrected text to reflect 3 bits instead of 4.
Table 6, Lock Register: Corrected address range from DQ15-5 to DQ15-3; removed DQ4 and
DQ3; Corrected DQ15-3 Lock Register to Don’t Care.
Table 7, Sector Protection Schemes: Corrected Sector States.
Command Definitions
Table 12, Command Definitions, x16
Nonvolatile Sector Protection Command Set Entry Second Cycle Address corrected from 55
to 2AA.
Legend: Clarified PWDx, DATA
Notes: Clarified Note 19.
Table 13, Command Definitions, x8
Password Read and Unlock Addresses and Data corrected.
Legend: Clarified PWDx, DATA
Notes: Clarified Note 19.
Test Conditions
Table 17 on page 75, Test Specifications and Figure 10, on page 76, Input Waveforms and
Measurement Levels: Corrected Input Pulse Levels to 0.0–VIO; corrected Input timing measurement reference levels to 0.5VIO.
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Revision A2 (January 22, 2004)
Lock Register
Corrected and added new text for Secured Silicon Sector Protection Bit, Persistent Protection
Mode Lock Bit, and Password Protection Mode Lock Bit.
Persistent Sector Protection
Persistent Protection Bit (PPB): Added the second paragraph text about programming the PPB
bit.
Persistent Protection Bit Lock (PPB Lock Bit): Added the second paragraph text about configuring the PPB Lock Bit, and fourth paragraph on Autoselect Sector Protection Verification.
Added PPB Lock Bit requirement of 200ns access time.
Password Sector Protection
Corrected 1 µs (built-in delay for each password check) to 2 µs.
Lock Register Command Set Definitions
Added new information for this section.
Password Protection Command Set Definitions
Added new information for this section.
Non-Volatile Sector Protection Command Set Definitions
Added new information for this section.
Global Volatile Sector Protection Freeze Command Set
Added new information for this section.
Volatile Sector Protection Command Set
Added new information for this section.
Secured Silicon Sector Entry Command
Added new information for this section.
Secured Silicon Sector Exit Command
Added new information for this section.
Revision A3 (March 2, 2004)
Connection Diagrams
Removed 56-pin reverse TSOP diagram.
Ordering Information
Updated the Standard Products for the S29GL512/256/128N devices and modified the valid
combinations tables.
Word Program Command Sequence
Added new information to this section.
Lock Register Command Set Definitions
Added new information to this section.
Table 13
Updated this table.
S29GL-N_00_B3 October 13, 2006
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93
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Revision A4 (May 13, 2004)
Global
Removed references to RTSOP.
Distinctive Characteristics
Removed 16-word/32-byte page read buffer from Performance Characteristics.
Changed Low power consumption to 25 mA typical active read current and removed 10 mA
typical intrapage active read current.
Ordering Information
Changed formatting of pages.
Changed model numbers from 00,01,02,03 to 01, 02, V1, V2.
Table 1, “Device Bus Operations”
Combined WP# and ACC columns.
Table 8, “CFI Query Identification String”, Table 9, “System Interface String”,
Table 10, “Device Geometry Definition”, and Table 11, “Primary Vendor-Specific
Extended Query
Added Address (x8) column.
Word Program Command Sequence
Added text to fourth paragraph.
Figure 1, “Write Buffer Programming Operation,”
Added note references and removed DQ15 and DQ13.
Figure 3, “Program Suspend/Program Resume,”
Changed field to read XXXh/B0h and XXXh/30h.
Password Protection Command Set Definitions
Replaced all text.
Command Definitions
Changed the first cycle address of CFI Query to 55.
Table 14, “ Memory Array Commands (x8)”
Changed the third cycle data Device ID to 90.
Removed Unlock Bypass Reset.
Removed Note 12 and 13.
Figure 5, “Data# Polling Algorithm,”
Removed DQ15 and DQ13.
Absolute Maximum Ratings
Removed VCC from All other pins with respect to Ground.
CMOS Compatible
Changed the Max of ICC4 to 70 mA.
Added VIL to the Test conditions of ICC5, ICC6, and ICC7
Change the Min of VIL to - 0.1 V.
Updated note 5.
Read-Only Operations–S29GL128N Only
Added tCEH parameter to table.
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Figure 11, “Read Operation Timings,”
Added tCEH to figure.
Figure 12, “Page Read Timings,”
Change A1-A0 to A2-A0.
Erase and Program Operations
Updated tWHWH1 and tWHWH2 with values.
Figure 16, “Chip/Sector Erase Operation Timings,”
Changed 5555h to 55h and 3030h to 30h.
Figure 17, “Data# Polling Timings (During Embedded Algorithms),”
Removed DQ15 and DQ14-DQ8
Added Note 2
Figure 18, “Toggle Bit Timings (During Embedded Algorithms),”
Changed DQ6 & DQ14/DQ2 & DQ10 to DQ2 and DQ6.
Alternate CE# Controlled Erase and Program Operations
Updated tWHWH1 and tWHWH2 with values.
Latchup Characteristics
Removed Table.
Erase and Programming Performance
Updated TBD with values.
Updated Note 1 and 2.
Physical Dimensions
Removed the reverse pinout information and note 3.
Revision A5 (September 29, 2004)
Performance Characteristics
Removed 80 ns.
Product Selector Guide
Updated values in tables.
Ordering Information
Created a family table.
Operating Ranges
Updated VIO.
CMOS Characteristics
Created a family table.
Read-Only Operations
Created a family table.
Hardware Reset (RESET#)
Created a family table.
Figure 13, “Reset Timings,”
Added tRH to waveform.
Erase and Program Operations
Created a family table.
S29GL-N_00_B3 October 13, 2006
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Alternate CE# Controlled Erase and Program Operations
Created a family table.
Erase and Programming Performance
Created a family table.
Revision A6 (January 24, 2005)
Global
Updated access times for S29GL512N.
Product Selector Guides
All tables updated.
Valid Combinations Tables
All tables updated.
AC Characteristics Read-Only Options Table
Added note for 90 ns speed options.
AC Characteristics Erase and Programming Performance Table
Added note for 90 ns speed options.
Figure 17 on page 83
Updated timing diagram.
AC Characteristics Alternate CE# Controlled Erase and Program
Operations Table
Added note for 90 ns speed options.
Revision A7 (February 14, 2005)
Distinctive Characteristics
Added Product Availability Table
Ordering Information
Under Model Numbers, changed VIO voltage values for models V1 and V2.
Physical Dimensions
Updated Package Table
Revision A8 (May 9, 2005)
Product Availability Table
Updated data in VCC and availability columns.
Product Selector Guide
Combined GL128N and GL256N tables. Changed upper limit of VIO voltage range to 3.6 V.
Ordering Information
Added wireless temperature range. Combined valid combinations table and updated for wireless temperature range part numbers.
DC Characteristics table
Added VIO = VCC test condition to ICC4, ICC5, ICC6 specifications. Corrected unit of measure
on ICC4 to µA. Changed maximum specifications for IACC (on ACC pin) and ICC3 to 90 mA.
Tables 12–15, Memory Array and Sector Protection (x8 & x16)
Re-formatted command definition tables for easier reference.
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Advance Information on S9GL-P AC Characteristics
Changed speed specifications and units of measure for tREADY, tRP, tRH, and tRPD. Changed
specifications on tREADY from maximum to minimum.
Revision A9 (June 15, 2005)
Ordering Information table
Added note to temperature range.
Valid Combinations table
Replaced table.
DC Characteristics table
Replaced VIL lines for ICC4, ICC5, ICC6.
Connection Diagrams
Modified 56-Pin Standard TSOP (pg 8). Modified 64-ball Fortified BGA.
Advance Information on S9GL-P AC Characteristics
Added second table.
Revision B0 (April 22, 2006)
Global
Changed document status to Full Production.
Ordering Information
Changed description of “A” for Package Materials Set. Modified S29GL128N Valid Combinations table.
S29GL128N Sector Address Table
Corrected bit range values for A22–A16.
Persistent Protection Bit (PPB)
Corrected typo in second sentence, second paragraph.
Secured Silicon Sector Flash Memory Region
Deleted note at end of second paragraph.
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the
Factory
Modified 1st bullet text.
Write Protect (WP#)
Modified third paragraph.
Device Geometry Definition table
Changed 1st x8 address for Erase Block Region 2.
Word Program Command Sequence
Modified fourth paragraph.
Write Buffer Programming
Deleted note from eighth paragraph.
Program Suspend/Program Resume Command Sequence
Corrected typos in first paragraph.
Lock Register Command Set Definitions
Modified fifth paragraph.
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit™ Flash Family
97
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Volatile Sector Protection Command Set
Modified fourth paragraph.
Sector Protection Commands (x16) table
Changed read command address for Lock Register Bits
Memory Array Commands (x8)
Added Program and Unlock Bypass Mode commands to table.
Write Operation Status
Deleted note (second paragraph).
DC Characteristics table
Modified test conditions for ICC4.
Revision B1 (May 5, 2006)
Ordering Information
Modified speed option, package material set, temperature range descriptions in breakout diagram. Modified Note 1.
Advance Information on S29GL-P AC Characteristics Hardware Reset (RESET#)
Replaced contents in section.
Revision B2 (October 3, 2006)
Connection Diagrams
Corrected 56-pin TSOP package drawing.
Revision B3 (October 13, 2006)
Write Buffer Programming
Deleted reference to incremental bit programming in last paragraph of section.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other
abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a SpansionTM product under development
by Spansion Inc. Spansion Inc. reserves the right to change or discontinue work on any product without notice. The information in this document is provided
as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement
of third-party rights, or any other warranty, express, implied, or statutory. Spansion Inc. assumes no liability for any damages of any kind arising out of the
use of the information in this document.
Copyright © 2003–2006 Spansion Inc. All rights reserved. SpansionTM, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof, are trademarks of Spansion Inc. Other company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
98
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006

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