BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor D882

BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
D882
Pb
z
Low saturation voltage.
z
Excellent hFE linearity and high hFE.
z
Less cramping space required due to small and thin
Lead-free
Package and reducing the trouble for attachment to a
radiator.
APPLICATIONS
z
Power amplifier application.
SOT-89
ORDERING INFORMATION
Type No.
Marking
Package Code
D882
SOT-89
D882
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
3
A
PC
Collector Dissipation
500
mW
Tj,Tstg
Junction and Storage Temperature
-55~150
℃
Document number: BL/SSSTG009
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
D882
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=40V,IE=0
1
μA
Collector cut-off current
ICEO
VCE=30V,IB=0
1
μA
Emitter cut-off current
IEBO
VEB=3V,IC=0
1
μA
DC current gain
hFE
TYP
MAX
VCE=2V,IC=20mA
30
150
VCE=2V,IC=1A
60
160
400
UNIT
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB= 0.2A
0.3
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=2A, IB=0.2A
1.0
2.0
V
Transition frequency
fT
VCE=5V, IC= 0.1A
90
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
45
pF
CLASSIFICATION
OF
Rank
Range
Document number: BL/SSSTG009
Rev.A
hFE
R
Q
P
E
60-120
100-200
160-320
200-400
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
D882
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG009
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
D882
PACKAGE OUTLINE
Plastic surface mounted package
SOT-89
SOT-89
Dim
Min
Max
A
4.5
4.7
B
2.3
2.7
C
1.5Typical
D
0.35
0.55
E
1.4
1.6
F
0.4
0.6
H
1.55
1.75
J
K
0.4Typical
4.15
4.25
All Dimensions in mm
SOLDERING FOOTPRINT
Unit:mm
PACKAGE
INFORMATION
Device
Package
Shipping
D882
SOT-89
1000/Tape&Reel
Document number: BL/SSSTG009
Rev.A
www.galaxycn.com
4