BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z High DC current gain. M28S Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code M28S 28S SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1000 mA PC Collector Power Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC058 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor M28S Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE B VCE=1V,IC=1mA 290 VCE=1V,IC=0.1A 300 VCE=1V,IC=0.3A 300 VCE=1V,IC=0.5A 300 Collector-emitter saturation voltage VCE(sat) IC=600mA, IB=20mA Transition frequency fT VCE=10V, IC=50mA Collector output capacitance Cob VCB=10V,IE=0,f=1MHz CLASSIFICATION OF TYP MAX UNIT 1000 0.55 B 100 V MHz 9 pF hFE2 Rank B C D Range 300-550 500-700 650-1000 Document number: BL/SSSTC058 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor M28S PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping M28S SOT-23 3000/Tape&Reel Document number: BL/SSSTC058 Rev.A www.galaxycn.com 3