BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Excellent hFE linearity z Power dissipation. 2SC5344 Pb Lead-free APPLICATIONS z General small signal amplifier. SOT-23 ORDERING INFORMATION Type No. 2SC5344 Marking Package Code FAO/FAY SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC023 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC5344 Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=1V,IC=100mA Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA Transition frequency fT VCE=5V, IC= 10mA Output capacitance Cob VCB=10V, IE=0,f=1kHz CLASSIFICATION OF Rank Range Marking Document number: BL/SSSTC023 Rev.A B MIN TYP 100 MAX UNIT 320 0.5 B 120 V MHz 13 pF hFE O Y 100-200 160-320 FAO FAY www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC5344 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J C 1.0Typical K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 2SC5344 SOT-23 3000/Tape&Reel Document number: BL/SSSTC023 Rev.A www.galaxycn.com 3