BL Galaxy Electrical Production specification NPN SILICON EPITAXIAL TRANSISTOR 2SD1005 FEATURES z High Collector to Base Voltage. z Excellent DC Current Gain Linearity. z Complements to PNP type 2SB804. Pb Lead-free SOT-89 ORDERING INFORMATION Type No. Marking 2SD965 D965 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A 500 mW PC Collector power dissipation Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Document number: BL/SSSTG056 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN SILICON EPITAXIAL TRANSISTOR 2SD1005 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Collector cut-off current ICBO Emitter cut-off current MIN TYP MAX UNIT VCB=100V, IE=0 0.1 uA IEBO VEB=5V,IC=0 0.1 uA Collector-emitter saturation voltage VCE(sat) IC/IB=500mA/50mA 0.15 0.5 V Base-emitter saturation voltage VBE(sat) IC/IB=500mA/50mA 0.9 1.5 V Base-emitter voltage VBE VCE=10V,IC=10mA 0.6 0.63 0.7 V DC current gain(note) hFE VCE=2V, IC=1mA 90 200 400 Current gain bandwidth product fT VCE=5V,IE=10mA 160 MHz Output Capacitance Cob VCB=10V, f=1MHz ,IE=0A 12 pF CLASSIFICATION OF hFE2 RANGE 90-180 135-270 200-400 MARKING BW BV BU TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTG056 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN SILICON EPITAXIAL TRANSISTOR 2SD1005 PACKAGE OUTLIN Plastic surface mounted package SOT-89 SOT-89 Dim Min Max A 4.5 4.7 B 2.3 2.7 C 1.5Typical D 0.35 0.55 E 1.4 1.6 F 0.4 0.6 H 1.55 1.75 J K 0.4Typical 4.15 4.25 All Dimensions in mm SOLDERING FOOTPRINT Unit:mm PACKAGE INFORMATION Device Package Shipping 2SD1005 SOT-89 1000/Tape&Reel Document number: BL/SSSTG056 Rev.A www.galaxycn.com 3