2SD1005

BL Galaxy Electrical
Production specification
NPN SILICON EPITAXIAL TRANSISTOR
2SD1005
FEATURES
z
High Collector to Base Voltage.
z
Excellent DC Current Gain Linearity.
z
Complements to PNP type 2SB804.
Pb
Lead-free
SOT-89
ORDERING INFORMATION
Type No.
Marking
2SD965
D965
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1
A
500
mW
PC
Collector power dissipation
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
Document number: BL/SSSTG056
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN SILICON EPITAXIAL TRANSISTOR
2SD1005
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
Collector cut-off current
ICBO
Emitter cut-off current
MIN
TYP
MAX
UNIT
VCB=100V, IE=0
0.1
uA
IEBO
VEB=5V,IC=0
0.1
uA
Collector-emitter saturation voltage
VCE(sat)
IC/IB=500mA/50mA
0.15
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC/IB=500mA/50mA
0.9
1.5
V
Base-emitter voltage
VBE
VCE=10V,IC=10mA
0.6
0.63
0.7
V
DC current gain(note)
hFE
VCE=2V, IC=1mA
90
200
400
Current gain bandwidth product
fT
VCE=5V,IE=10mA
160
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz ,IE=0A
12
pF
CLASSIFICATION OF hFE2
RANGE
90-180
135-270
200-400
MARKING
BW
BV
BU
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG056
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN SILICON EPITAXIAL TRANSISTOR
2SD1005
PACKAGE OUTLIN
Plastic surface mounted package
SOT-89
SOT-89
Dim
Min
Max
A
4.5
4.7
B
2.3
2.7
C
1.5Typical
D
0.35
0.55
E
1.4
1.6
F
0.4
0.6
H
1.55
1.75
J
K
0.4Typical
4.15
4.25
All Dimensions in mm
SOLDERING FOOTPRINT
Unit:mm
PACKAGE
INFORMATION
Device
Package
Shipping
2SD1005
SOT-89
1000/Tape&Reel
Document number: BL/SSSTG056
Rev.A
www.galaxycn.com
3