BL GALAXY ELECTRICAL S1A --- S1M REVERSE VOLTAGE: 50 - 1000 V CURRENT: 1.0 A SURFACE MOUNT RECTIFIERS FEATURES DO - 214AC(SMA) Plastic package has underwriters laboratory 111 flammability classifications For surface mounted applications 4.5± 0.1 1.5± 0.1 2.6± 0.15 Low profile package Built-in strain relief,ideal for automated placement High temperature soldering: 1 250oC/10 seconds at terminals 2.1± 0.2 5.1± 0.2 Case:JEDEC DO-214AC,molded plastic over 1111passivated chip 1.3± 0.2 Terminals:Solder Plated, solderable per MIL-STD1111750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.002 ounces, 0.064 gram 0.2± 0.05 0.203MAX MECHANICAL DATA Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified S1A S1B S1D S1G S1J S1K S1M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ord rectified current V @TL=110 Peak forw ard surge current @ T L = 110°C V 8.3ms single half-sine-w ave superimposed V on rated load (JEDEC Method) Maximum instantaneous forw ard voltage at 1.0A Maximum DC reverse current at rated DC blockjing voltage @TA=25oC 1.0 IF(AV) IFSM 40.0 Typical thermal resitance (NOTE 2) 30.0 A 1.1 VF V 5.0 IR @TA=125oC Typical junction capacitance(NOTE 1) A 50.0 CJ 15 R JA 50 Operating junction and storage temperature range TJTSTG -55--------+175 NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0volts pF o C/W o C www.galaxycn.com 2.Thermal resistance form junction to ambient and junction to lead P.C.B mounted on 0.27"X0.27"(7.0X7.0mm2) copper pad areas. Document Number 0280001 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES S1A-S1M FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT 100 PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD CURRENT,AMPERES 1.2 Resistive or inductive Load 1.0 0.8 0.6 0.4 0.2X0.2(5.0X5.0mm) THICK COPPERPAND AREAS 0.2 0 0 25 50 75 100 125 150 175 O T L =110 C 8.3m s Single Half Sine (JE DE C M ethod) 40 30 S 1(A-J) 10 S 1(K,M) 1 1 10 AMBIENT TEMPERATURE 10 O TJ=25 C 1 0.01 0.4 0.6 0.8 1.0. 1.2 S 1.4 1.6 1.8 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES 100 Puise Width=300 1%DUTY CYCLE 100 NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL FORWARD CHARACTERISTICS 0.1 W ave 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 100 10 O TJ=125 C 1 O TJ=75 C 0.1 TJ=25OC 0.01 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.6-TRANSIENT THERMAL IMPEDANCE 100 60 f=1MHz TJ=25 40 20 10 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 TRANSIENT THERMAL IMPEDANCE, /W JUNCTION CAPACITANCE pF 100 10 S1(K,M) S1(A-J) 1 UNITS MOUNTED on 0.20x0.20''(5.0X5.0mm)X0.5mil INCHES(0.013mm) THICK COPPERLAND AREAS 0.1 0.01 REVERSE VOLTAGE,VOLTS 0.1 1 10 100 PULSE DURATON,SEC www.galaxycn.com Document Number 0280001 BLGALAXY ELECTRICAL 2.