ROHM DTA043ZEB

Data Sheet
-100mA/-50V Digital transistors(with built-in resistors)
DTA043ZM / DTA043ZEB / DTA043ZUB
Dimensions (Unit : mm)
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See Equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
VMT3
Abbreviated symbol : 32
EMT3F
(3)
(1)
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
(2)
Abbreviated symbol : 32
UMT3F
2.0
0.9
(1)
0.65 0.65
1.3
0.53
2.1
1.25
(3)
0.425
Applications
Inverter, Interface, Driver
0.53
0.425
0.32
(2)
0.13
Abbreviated symbol : 32
Packaging specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTA043ZM
DTA043ZEB
DTA043ZUB
Equivalent circuit
VMT3
Taping
T2L
EMT3F
Taping
TL
UMT3F
Taping
TL
8000
3000
3000
○
-
-
○
○
-
OUT
OUT
R
R11
ININ
RR22
GND(+)
GND(+)
OUT
OUT
ININ
GND(+)
GND(+)
R 1=4.7kΩ, R2=47kΩ
Absolute maximum (Ta=25℃)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current *1
Output current
Power dissipation *2
Junction temperature
Range of storage temperature
M
Limits(DTA043Z□)
EB
UB
-50
-30
5
-100
-100
IC(max)
IO
PD
Tj
Tstg
150
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
℃
℃
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.09 - Rev.A
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Input voltage
Output voltage
Data Sheet
DTA043ZM / DTA043ZEB / DTA043ZUB
Min.
Typ.
VI(off)
-
-
-0.5
V
VCC=-5V / IO=-100uA
VI(on)
-1.1
-
-
V
VO=-0.3V / IO=-5mA
VO(on)
-
-0.07
-0.15
V
IO=-5mA / II=-0.5mA
II
-
-
-1.8
mA
VI=-5V
VCC=-50V / VI=0V
Input current
Max.
Test Conditions
Unit
IO(off)
-
-
-500
nA
DC current gain
GI
80
-
-
-
VO=-10V / IO=-5mA
Transition frequency *
fT
-
250
-
MHz
VCE=-10V /IE=5mA
f=100MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
Resistance ratio
R2/R1
8
10
12
-
Output current
* Characteristics of built-in transistor
Electrical characteristics curves
-10
-100
VCC=-5V
OUTPUT CURRENT : IO (mA)
INPUT VOLTAGE : VI(on) (V)
VO=-0.3V
-10
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
-1
-0.1
-0.1
-1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
-0.1
-0.01
-0.001
-1
-10
-100
0
-0.5
OUTPUT CURRENT : IO (mA)
Fig.1 Input Voltage vs. Output Current
-2.5
-3
-1
VO=-10V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
-2
(OFF characteristics)
1000
10
1
-0.1
-1.5
Fig.2 Input Voltage vs. Output Current
(ON characteristics)
100
-1
INPUT VOLTAGE : V I(off) (V)
-1
-10
-0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
-0.01
-0.001
-0.1
-100
-1
-10
-100
OUTPUT CURRNET : IO (mA)
OUTPUT CURRENT : IO (mA)
Fig.3 DC Current Gain vs. Output Current
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© 2011 ROHM Co., Ltd. All rights reserved.
IO/II=10
Fig.4 Output Voltage vs. Output Current
2/2
2011.09 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A